CN1011452B - 太阳能电池 - Google Patents

太阳能电池

Info

Publication number
CN1011452B
CN1011452B CN88101994A CN88101994A CN1011452B CN 1011452 B CN1011452 B CN 1011452B CN 88101994 A CN88101994 A CN 88101994A CN 88101994 A CN88101994 A CN 88101994A CN 1011452 B CN1011452 B CN 1011452B
Authority
CN
China
Prior art keywords
solar cell
semiconductor substrate
ohmic contact
silicon
cell according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CN88101994A
Other languages
English (en)
Chinese (zh)
Other versions
CN88101994A (zh
Inventor
卡尔-格哈德·赫斯泰
鲁道夫·赫索
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nukem GmbH
Original Assignee
Nukem GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nukem GmbH filed Critical Nukem GmbH
Publication of CN88101994A publication Critical patent/CN88101994A/zh
Publication of CN1011452B publication Critical patent/CN1011452B/zh
Expired legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/12—Photovoltaic cells having only metal-insulator-semiconductor [MIS] potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
CN88101994A 1987-04-13 1988-04-13 太阳能电池 Expired CN1011452B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP3712503.6 1987-04-13
DE19873712503 DE3712503A1 (de) 1987-04-13 1987-04-13 Solarzelle

Publications (2)

Publication Number Publication Date
CN88101994A CN88101994A (zh) 1988-10-26
CN1011452B true CN1011452B (zh) 1991-01-30

Family

ID=6325536

Family Applications (1)

Application Number Title Priority Date Filing Date
CN88101994A Expired CN1011452B (zh) 1987-04-13 1988-04-13 太阳能电池

Country Status (8)

Country Link
US (1) US4886555A (OSRAM)
EP (1) EP0286917B1 (OSRAM)
JP (1) JPS6453468A (OSRAM)
CN (1) CN1011452B (OSRAM)
AU (1) AU600573B2 (OSRAM)
DE (2) DE3712503A1 (OSRAM)
ES (1) ES2033972T3 (OSRAM)
IN (1) IN171031B (OSRAM)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8915653U1 (de) * 1989-05-25 1991-01-03 Moreno, Dámaso, 5142 Hückelhoven Folienartiges Material für eine Faltpackung und derartige Faltpackung
AU652998B2 (en) * 1991-02-04 1994-09-15 Paul Scherrer Institut Solar cell
US5356488A (en) * 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
EP0742959B1 (de) * 1993-07-29 2001-11-14 Gerhard Willeke Verfahren zur Herstellung einer Solarzelle, sowie nach diesem verfahren hergestellte Solarzelle
DE19741832A1 (de) * 1997-09-23 1999-03-25 Inst Solarenergieforschung Verfahren zur Herstellung einer Solarzelle und Solarzelle
JP3557148B2 (ja) * 2000-02-21 2004-08-25 三洋電機株式会社 太陽電池モジュール
US7294779B2 (en) * 2001-01-31 2007-11-13 Shin-Etsu Handotai Co., Ltd. Solar cell and method for producing the same
JP4291521B2 (ja) * 2001-03-23 2009-07-08 日本オプネクスト株式会社 半導体受光素子、半導体受光装置、半導体装置、光モジュール及び光伝送装置
US20070295381A1 (en) 2004-03-29 2007-12-27 Kyocera Corporation Solar Cell Module and Photovoltaic Power Generator Using This
CN100437991C (zh) * 2004-12-08 2008-11-26 鸿富锦精密工业（深圳）有限公司 散热装置及其制备方法
JP2009506546A (ja) 2005-08-24 2009-02-12 ザ トラスティーズ オブ ボストン カレッジ ナノスケール共金属構造を用いた太陽エネルギー変換のための装置および方法
WO2007025013A2 (en) 2005-08-24 2007-03-01 The Trustees Of Boston College Nanoscale optical microscope
US7649665B2 (en) 2005-08-24 2010-01-19 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
WO2007086903A2 (en) 2005-08-24 2007-08-02 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
US7589880B2 (en) 2005-08-24 2009-09-15 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
US8816191B2 (en) * 2005-11-29 2014-08-26 Banpil Photonics, Inc. High efficiency photovoltaic cells and manufacturing thereof
CN102150278A (zh) 2008-06-11 2011-08-10 因特瓦克公司 使用注入和退火方法的太阳能电池-选择性发射极的形成
DE102009024807B3 (de) 2009-06-02 2010-10-07 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Solarzelle mit benachbarten elektrisch isolierenden Passivierbereichen mit hoher Oberflächenladung gegensätzlicher Polarität und Herstellungsverfahren
US8749053B2 (en) 2009-06-23 2014-06-10 Intevac, Inc. Plasma grid implant system for use in solar cell fabrications
EP2290704A1 (en) * 2009-08-27 2011-03-02 Applied Materials, Inc. Passivation layer for wafer based solar cells and method of manufacturing thereof
DE102009044052A1 (de) * 2009-09-18 2011-03-24 Schott Solar Ag Kristalline Solarzelle, Verfahren zur Herstellung einer solchen sowie Verfahren zur Herstellung eines Solarzellenmoduls
KR20110049218A (ko) * 2009-11-04 2011-05-12 삼성전자주식회사 태양 전지 및 그 제조 방법
DE102011051019B4 (de) * 2011-06-10 2021-10-07 Hanwha Q Cells Gmbh Solarzellenherstellungsverfahren
CN102222706B (zh) * 2011-06-28 2012-11-14 厦门市三安光电科技有限公司 一种高倍聚光太阳能电池芯片
SG11201402177XA (en) 2011-11-08 2014-06-27 Intevac Inc Substrate processing system and method
KR101860919B1 (ko) * 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법
MY178951A (en) 2012-12-19 2020-10-23 Intevac Inc Grid for plasma ion implant
WO2018198683A1 (ja) 2017-04-27 2018-11-01 京セラ株式会社 太陽電池素子および太陽電池素子の製造方法
US10971647B2 (en) * 2018-05-07 2021-04-06 Amberwave, Inc. Solar cell via thin film solder bond
CN113675722B (zh) * 2021-07-14 2024-10-29 威科赛乐微电子股份有限公司 一种Cap layer层蚀刻优化方法
CN118156325A (zh) 2022-12-07 2024-06-07 浙江晶科能源有限公司 太阳能电池及光伏组件
CN118156335A (zh) * 2022-12-07 2024-06-07 浙江晶科能源有限公司 太阳能电池及光伏组件
CN116314382B (zh) 2023-05-16 2023-09-08 天合光能股份有限公司 太阳能电池及其制作方法、光伏组件及光伏系统
CN116387371B (zh) * 2023-06-02 2023-09-29 天合光能股份有限公司 太阳能电池及其制作方法、光伏组件及光伏系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5165774U (OSRAM) * 1974-11-20 1976-05-24
US4135950A (en) * 1975-09-22 1979-01-23 Communications Satellite Corporation Radiation hardened solar cell
US4253881A (en) * 1978-10-23 1981-03-03 Rudolf Hezel Solar cells composed of semiconductive materials
DE3016498A1 (de) * 1980-04-29 1981-11-05 Siemens AG, 1000 Berlin und 8000 München Lichtempfindliche halbleiterbauelemente
JPS577168A (en) * 1980-06-14 1982-01-14 Shunpei Yamazaki Manufacture of mis photoelectric converter
US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
FR2499316A1 (fr) * 1981-02-04 1982-08-06 Radiotechnique Compelec Perfectionnement a la realisation d'une cellule solaire en vue, notamment, de modeler l'epaisseur de sa couche active, et cellule ainsi obtenue
US4367368A (en) * 1981-05-15 1983-01-04 University Patents Inc. Solar cell
FR2556135B1 (fr) * 1983-12-02 1986-09-19 Thomson Csf Photo-diode a l'antimoniure d'indium et procede de fabrication
DE3536299A1 (de) * 1985-10-11 1987-04-16 Nukem Gmbh Solarzelle aus silizium

Also Published As

Publication number Publication date
CN88101994A (zh) 1988-10-26
JPS6453468A (en) 1989-03-01
EP0286917B1 (de) 1992-09-02
IN171031B (OSRAM) 1992-07-04
AU600573B2 (en) 1990-08-16
ES2033972T3 (es) 1993-04-01
EP0286917A2 (de) 1988-10-19
US4886555A (en) 1989-12-12
AU1452288A (en) 1988-10-13
EP0286917A3 (en) 1990-01-17
DE3874184D1 (de) 1992-10-08
DE3712503A1 (de) 1988-11-03

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