CN101134879B - 用于连接腔室部件的自钝化耐等离子体腐蚀材料 - Google Patents

用于连接腔室部件的自钝化耐等离子体腐蚀材料 Download PDF

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Publication number
CN101134879B
CN101134879B CN2007101428789A CN200710142878A CN101134879B CN 101134879 B CN101134879 B CN 101134879B CN 2007101428789 A CN2007101428789 A CN 2007101428789A CN 200710142878 A CN200710142878 A CN 200710142878A CN 101134879 B CN101134879 B CN 101134879B
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CN
China
Prior art keywords
adhesives
jointing material
metal charge
halogen
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101428789A
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English (en)
Chinese (zh)
Other versions
CN101134879A (zh
Inventor
珍妮弗·Y·孙
丽·许
塞恩·撒奇
凯利·A·麦克多诺
罗伯特·斯科特·克拉克
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Applied Materials Inc
Original Assignee
Applied Materials Inc
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Publication date
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Publication of CN101134879A publication Critical patent/CN101134879A/zh
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Publication of CN101134879B publication Critical patent/CN101134879B/zh
Expired - Fee Related legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
CN2007101428789A 2006-08-01 2007-08-01 用于连接腔室部件的自钝化耐等离子体腐蚀材料 Expired - Fee Related CN101134879B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/461,689 US7718029B2 (en) 2006-08-01 2006-08-01 Self-passivating plasma resistant material for joining chamber components
US11/461,689 2006-08-01

Publications (2)

Publication Number Publication Date
CN101134879A CN101134879A (zh) 2008-03-05
CN101134879B true CN101134879B (zh) 2011-11-02

Family

ID=38705022

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101428789A Expired - Fee Related CN101134879B (zh) 2006-08-01 2007-08-01 用于连接腔室部件的自钝化耐等离子体腐蚀材料

Country Status (6)

Country Link
US (1) US7718029B2 (enExample)
EP (1) EP1884979A3 (enExample)
JP (1) JP4628405B2 (enExample)
KR (1) KR101095752B1 (enExample)
CN (1) CN101134879B (enExample)
TW (2) TWI350550B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE419922T1 (de) * 2004-04-08 2009-01-15 Matsushita Electric Works Ltd Elektrostatischer zerstäuber
US7838800B2 (en) * 2006-09-25 2010-11-23 Tokyo Electron Limited Temperature controlled substrate holder having erosion resistant insulating layer for a substrate processing system
DE112008002168B4 (de) * 2007-04-26 2014-02-13 Panasonic Corporation Kühlschrank und elektrische Vorrichtung
TWI478275B (zh) * 2008-02-26 2015-03-21 Kyocera Corp A wafer support portion and a method of manufacturing the same, and an electrostatic chuck using the same
US8194384B2 (en) * 2008-07-23 2012-06-05 Tokyo Electron Limited High temperature electrostatic chuck and method of using
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
US20100140222A1 (en) * 2008-12-10 2010-06-10 Sun Jennifer Y Filled polymer composition for etch chamber component
US9520314B2 (en) * 2008-12-19 2016-12-13 Applied Materials, Inc. High temperature electrostatic chuck bonding adhesive
JP6002672B2 (ja) * 2010-11-15 2016-10-05 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャンバコンポーネントを接合するために使用される接着材料
KR20150013627A (ko) * 2012-04-26 2015-02-05 어플라이드 머티어리얼스, 인코포레이티드 Ｅｓｃ 본딩 접착제 부식을 방지하기 위한 방법들 및 장치
US9666466B2 (en) * 2013-05-07 2017-05-30 Applied Materials, Inc. Electrostatic chuck having thermally isolated zones with minimal crosstalk
US9583369B2 (en) 2013-07-20 2017-02-28 Applied Materials, Inc. Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles
US9725799B2 (en) 2013-12-06 2017-08-08 Applied Materials, Inc. Ion beam sputtering with ion assisted deposition for coatings on chamber components
US10570257B2 (en) 2015-11-16 2020-02-25 Applied Materials, Inc. Copolymerized high temperature bonding component

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
US6063207A (en) * 1998-11-27 2000-05-16 United Semiconductor Corp. Surface treatment for bonding pad
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
EP1475820A1 (en) * 1998-06-30 2004-11-10 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US20050003675A1 (en) * 2000-11-01 2005-01-06 Carducci James D. Dielectric etch chamber with expanded process window

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6508911B1 (en) * 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
JP2001226656A (ja) * 2000-02-16 2001-08-21 Tomoegawa Paper Co Ltd 半導体製造装置またはエッチング装置用接着剤、該装置用接着シート及びそれらを用いた構造部品
JP2002093777A (ja) * 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置
WO2002037541A2 (en) * 2000-11-01 2002-05-10 Applied Materials, Inc. Etch chamber for etching dielectric layer with expanded process window
US6682627B2 (en) 2001-09-24 2004-01-27 Applied Materials, Inc. Process chamber having a corrosion-resistant wall and method
JP3784682B2 (ja) * 2001-09-26 2006-06-14 富士通株式会社 伝送装置
US7048814B2 (en) * 2002-02-08 2006-05-23 Applied Materials, Inc. Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus
JP4047103B2 (ja) * 2002-08-29 2008-02-13 リンテック株式会社 貼着体
US6983692B2 (en) * 2003-10-31 2006-01-10 Hewlett-Packard Development Company, L.P. Printing apparatus with a drum and screen
JP2005154531A (ja) * 2003-11-25 2005-06-16 Lintec Corp 低アウトガス粘着シート
US6983892B2 (en) 2004-02-05 2006-01-10 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074456A (en) * 1990-09-18 1991-12-24 Lam Research Corporation Composite electrode for plasma processes
EP1475820A1 (en) * 1998-06-30 2004-11-10 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6063207A (en) * 1998-11-27 2000-05-16 United Semiconductor Corp. Surface treatment for bonding pad
US20050003675A1 (en) * 2000-11-01 2005-01-06 Carducci James D. Dielectric etch chamber with expanded process window
US20030029563A1 (en) * 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber

Also Published As

Publication number Publication date
JP4628405B2 (ja) 2011-02-09
US20080029211A1 (en) 2008-02-07
CN101134879A (zh) 2008-03-05
JP2008103681A (ja) 2008-05-01
KR20080012230A (ko) 2008-02-11
EP1884979A2 (en) 2008-02-06
TW200830349A (en) 2008-07-16
TW201140642A (en) 2011-11-16
TWI441235B (zh) 2014-06-11
US7718029B2 (en) 2010-05-18
TWI350550B (en) 2011-10-11
EP1884979A3 (en) 2008-02-27
KR101095752B1 (ko) 2011-12-21

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C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
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Address after: American California

Patentee after: Applied Materials Inc.

Address before: American California

Patentee before: Applied Materials Inc.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20111102

Termination date: 20160801

CF01 Termination of patent right due to non-payment of annual fee