CN101133452B - 包括半反射锡和碲基合金层的光学数据存储介质 - Google Patents
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Abstract
本发明涉及一种光学数据存储介质，其至少包括一个无机材料的有源层(3)，其在写操作中能够经历局部变形。根据本发明，有源层(3)包括至少在读操作中旨在接收光学辐射(6)的前面(4)。本发明的介质也包括锡和碲基合金薄层，其形成布置在有源层(3)的前面(4)上的半反射层。
Description
技术领域
本发明涉及一种光学数据存储介质，包括：
-无机材料的有源层，它能够在写操作过程中经历局部变形并具有设计为至少在读操作过程中接收光学辐射的前面，
-以及布置在有源层的前面上的半反射层。
背景技术
光学记录，例如在CD-R(压缩盘-可记录)和DVD-R(数字多功能盘-可记录)型介质上，大多数情况通过在塑料基板上沉积的并由反射金属层覆盖的着色剂材料层进行。然而，在着色剂中的不可逆的光学记录技术有时呈现高的生产成本，特别相对于着色剂的价格和着色剂处理步骤的劳动力成本而言。
在八十年代，在由激光切除在无机材料中形成标记方面进行了大量的研究，标记的存在则导致在盘的表面激光束的反射的局部降低。在这段时间研究的无机材料是，例如，碲和含有砷、锑、硒和硫的合金。然而，在大多数研究中，特别是在M.Terao等人的文章“Chalcogenide thin films for laser-beamrecordings by thermal creation of holes”(J.Appl.Phys.50(11)，November1979)中，使用的功率在40mW和300mW之间和标记的尺寸约为10μm。然而这些功率和标记尺寸不再对应当前写入的规格。在DVD-R上用于记录数据的写功率实际上必须是约10mW和标记的直径必须是约400nm。
而且，用这样的无机材料，例如由聚合物制成的保护层通常必须沉积到记录介质上。然而，保护层的存在通常引起信号的质量的损害和写功率的降低。这样，已经研究了许多材料，但它们没有几个能够获得良好的质量。此外，它们不能获得DVD-R格式所需的存储密度。这就是尽管它们的高生产成本，对于这个标准，仍必须使用着色剂的原因。
目前，一些人提出通过蓝光激光二极管在包括无机材料的有源层的介质中进行光学数据记录。聚焦的激光束的狭小实际上能够获得比在光盘(CD-R和DVD-R)的先前代中更高的功率密度。这就使得可以超出无机材料的使用极限，即，与有机盘相比，有相对不敏感性。使用泡沫形式而不是孔形式的层的变形的另一个写技术能够使用更低的功率。
为了获得包括无机有源层的记录介质，籍此可以实现对应于DVD格式规格的标记的分辨率和存储密度，在专利申请WO-A-2004/053858中已经提出使用碲和锌合金的有源层。有源层包括设计为接收比如激光的光学辐射的前面，以能够实现由例如以孔或泡沫的形式的机械变形的写机制。金属半反射层可以布置在有源层的前面上。
专利申请WO-A-01/93256指出了当半反射层布置在能够在写操作中局部变形的无机材料的有源层的前面上时从该半反射层获得的优点。半反射层由从包括铝、银、铜、金、锌、钛和它们的合金的组中选择的金属形成。其在有源层的前面上的存在使记录介质的反射系数的值能够增加而没有过分地增加写阈值。当有源层没有变形时，实际上它通常呈现一定的反射系数，但这不足以获得所述反射系数与在写操作之后有源层的变形的区域的反射系数之间大的差异。由有源层的和可能地半反射层的局部变形的数据记录实际上具有局部降低由有源层和半反射层形成的叠层的反射系数的作用。
然而，尽管用于形成半反射层的金属或合金是良好的热传导体，但它们不能用作厚层且不引起敏感度的降低，当它们用作薄层时，它们通常失去它们的金属性质和/或它们更容易被损伤，特别是通过氧化或通过硫化。
此外，由形成孔和泡沫在本文的背景中迄今使用的无机材料具有相对弱的反射，通常小于40％。这尤其一方面基于根源于它们的电子结构，另一方面也基于在它们沉积之后所呈现的非晶结构。同样的材料，一旦结晶，就呈现更高的反射，但它们需要从非晶状态到晶体状态的转变步骤，这就需要初始剂(initializer)的使用。初始剂的使用在可再记录盘中常见，然而对于不可逆记录介质仍然太贵。
发明内容
本发明的目标是弥补现有技术的缺点和更具体地提出呈现读光学辐射的初始反射和写光学辐射的部分吸收的光学记录介质，对应于国际标准规格，特别在DVD介质的情况。
根据本发明，这个目标由所附的权利要求获得。
更具体地，这个目标由半反射层是锡或碲基合金的薄层的事实来获得。
该合金可以是锡和碲合金，或它可以是锡、碲和从锌和铟中选择的金属的合金。
根据本发明的发展，有源层的无机材料是碲和锌合金。
根据具体的实施例，有源层的无机材料是碲和锌合金，有源层和半反射层优选地形成具有厚度小于或等于80nm的叠层。更具体地，半反射层和有源层都具有约20nm的厚度。
附图说明
其它的优点和特征将从下面本发明的具体实施例的描述中可见，该具体实施例仅作为非限制性实例给出并在附图中呈现，其中：
图1呈现根据本发明的光学记录介质的具体实施例。
图2呈现Sn-Te合金的折射率(n)和吸收系数(k)相对于光子能量(eV)的变化。
图3至图5分别呈现20、30和40nm的薄层的折射率(n)和吸收系数(k)的不同的值的反射和吸收的等值线(iso-values)。
图6在单一曲线图上示意性地示出在图3至图5中呈现的不同的区域1。
图7呈现根据图1的光学记录介质的替换实施例。
具体实施方式
如图1中所呈现的，光学记录介质，优选地不可逆的，包括例如由聚碳酸脂制成的基板1，其上依次沉积半反射层2和有源层3.
由有源层3和半反射层2形成的叠层优选地具有小于或等于80纳米的厚度并优选地小于或等于50nm。更具体地，根据优选实施例，半反射层2和有源层3都具有约20nm的厚度。
有源层3由无机材料制成。有源层3优选地由锌和碲合金(Zn-Te)制成。有源层3呈现与半反射层2接触的前面4和自由后面5。有源层3在写操作过程中能够经历局部变形，且它的前面4被设计为至少在读操作中接收光学辐射6。由有源层经历的局部变形优选地是由通过有源层3的前面4接收的写光学辐射的作用引起以泡沫形式的变形。有源层的变形作用也能使半反射层2变形。写光学辐射例如是聚焦的激光束。
半反射层2由锡和碲基合金组成。例如它由碲化锡(Sn-Te)制成，其也称作锡和碲合金或锡和碲化合物。优选地，在Sn-Te合金中，锡的原子百分比比例在40％和60％之间，和更具体地在45％和55％之间。在所述合金中碲的原子百分比比例与锡的原子百分比是互补的，碲的原子百分比比例在60％和40％之间和更具体地在55％和45％之间。这样，该Sn-Te合金的优选的成分按原子百分比为锡50％和碲50％。
锡和碲基合金的半反射层的存在能够使记录介质的反射系数得到改善。确实，当记录介质仅包括无机材料的有源层时，例如ZnTe，记录介质的反射约是20％到30％。然而国际标准需要DVD-R型介质具有至少45％的初始反射率。该反射率依赖于基板的几何形状，其是造成沉积在这个基板上的材料的衍射和光学性质的损失的原因。此外，因为数据写入与沉积在基板上的层之一的光学辐射的部分吸收和尤其与有源层的吸收相关，介质的吸收必须至少大于30％。
为了有效率，必须布置在有源层的前面上的半反射层实际上必须具有满足下列规格的折射率n和吸收系数k：
-(n-4)2+k2＞12.25
-(n-8)2+(k+1)2＞12.25
-(n-7)2+k2＜42.25
-n和k必须为正
-n必须小于8。
图2呈现了结晶形式的Sn-Te合金的折射率n和吸收系数k相对于光子能量的理论的变化。可以发现在2eV的能量值，大致对应于以已知方式用于DVD-R型介质中的写和读操作的波长的能量值，Sn-Te合金呈现约4的很高的折射率，和约5.5的最大的吸收系数。因此，Sn-Te合金的折射率n和吸收系数k核实了上述的规格。因此上述合金可以用于形成布置在记录介质的有源层的前面上的半反射层。
此外，图3至图5呈现分别具有20、30和40nm厚度的薄层的折射率n和吸收系数k的不同值的反射率和吸收率的等值线。在图3到图5中，呈现的不同的区域1对应其中吸收率大于30％和反射率至少45％的折射率n和吸收系数k的区域。在图3中，区域2到区域5也为指示目的而呈现。在区域2中，反射率至少是45％，但吸收率在20％和30％之间；而在区域3中反射率在35％和45％之间，但吸收率大于35％。在区域4中，反射率在35％和45％之间，和吸收率在20％和35％之间；而在区域5中，发射率和吸收率很低。因此，区域1代表DVD型记录介质必须置于其中以满足国际标准的需要的理想区域。
然而，图3到图5示出反射率和吸收率的等值线根据薄层的厚度变化。这样，图6在单一曲线图上分别对于20、30和40nm的厚度的层呈现了在图3到图5中呈现的不同的区域1。由此，曲线A代表根据图3的区域1，而曲线B和C分别代表根据图4和图5的区域1。
则可以发现，对于2eV的能量值，Sn-Te合金的折射率n和吸收系数k总是位于区域1，无论Sn-Te合金的薄层的厚度如何。由此，不像通常用在记录介质中的无机材料，Sn-Te合金的光学性质在要满足的反射率和吸收率方面能实现DVD-R的国际标准规格，无论所述薄层的厚度如何。
而且，为了找到位于图3到图5中呈现的区域1的材料，通常寻找呈现异常光学性质，接近吸收带的材料，和可能的途径之一是选择呈现接近工作波长，即对应于2eV的波长的带隙的材料。然而，从图2中可以发现Sn-Te合金的吸收系数k在带隙能量之上进展相对慢，和Sn-Te材料的关注点落在接近工作波长的临界点E2，其导致很小的带隙。
因此锡和碲合金的半反射层能够获得呈现读光学辐射的初始反射和写光学辐射的部分吸收的记录介质，对应于国际标准规格，特别在DVD介质的情况。另外，它没有呈现文档WO-A-01/93256中描述的半反射金属薄层的缺点。
在文档WO-A-01/93256中，例如由铝、金、银、铜、锌、钛、镍或一种它们的合金制成的半反射金属层的厚度实际上被调整至最优以提高记录介质的反射而不过分地增加写阈值。由此其厚度约为4nm到10nm以至于限制了它的热传导率。过高的热传导率实际上将导致记录介质的敏感度的降低。
与文档WO-A-01/93256不同，锡和碲基合金和更具体地Sn-Te合金的使用以形成半反射层2显著地使半反射层2的厚度能充分地增加，更具体地增加到约20nm的厚度。这能够使记录介质的反射得到改善。然而，半反射层2保持中等的热传导率，其能够获得记录介质的可接受的敏感度。
此外，锡和碲基合金也呈现具有结晶温度低于0℃的优点。由此，当进行沉积操作时，锡和碲基合金的薄层已经是晶体形式，其也能够获得高反射。另外，由于锡和碲基合金非常稳定，它不经历任何化学退化。最后，与用在现有技术中的材料不同，锡和碲基合金在写操作中增强以泡沫形式的局部变形。用在现有技术中的半反射金属层的性能实际上，与泡沫的形成相比，更机械地有利于孔的形成。然而，由泡沫形成的记录是优先的，因为它能够使比由孔的形成获得的记录具有更高的数据存储密度。
最后，用于形成文档WO-A-01/93256中描述的薄半反射金属层的某种金属通常呈现对氧化和/或硫化敏感的缺点。另一方面，锡和碲基合金的半反射层存在稳定的优点。
本发明不限制于上述实施例。由此，记录介质的薄层能够以不同的次序布置在介质内以能使光学辐射6到达基板1的相对的侧上的有源层3。这样，在图7中，聚碳酸脂基板1依次由有源层3、半反射层2、胶粘剂层7和例如由聚碳酸脂制成的保护支撑8覆盖。然后有源层3的前面4和后面5分别与半反射层2和基板1接触，以这种方式以使得来自保护支撑8的自由面的光学辐射6总是经由有源层的前面4到达有源层。胶粘剂层7优选地是能够变形的胶粘剂层。这样它伴随由于来自保护支撑8的自由面的写光学辐射6的作用引起的层的变形，所述层分别为有源层3和半反射层2。
例如，在图7中呈现的模型具体实施例中，有源层3由65％的锌原子百分比和35％的碲原子百分比的锌和碲合金制成，而半反射层2由锡和碲基合金制成。有源层3和半反射层2例如都具有20nm的厚度，而基板1具有0.6mm的厚度，且胶粘剂层7的厚度约为数十微米。
由有源层的前面接收以在有源层内形成局部变形的写光学辐射，例如聚焦的激光束，也能够被比如加热手段的任何其它类型的手段替换。例如，可以通过由微尖(microtip)或由焦耳效应引起的加热引起局部变形。
基于锡和碲的二元合金可以被由锡、碲和选自锌和铟的金属形成的三元合金有利地替换。锡、碲和锌合金和锡、碲和铟合金分别表示为(SnTe)xZn1-x和(SnTe)xIn1-x。参数x的值优选地大于或等于90％。在这种情况，在三元合金中选自锌和铟的金属的原子比例小于或等于10％。
Claims (12)
1.光学记录介质，包括：
无机材料的有源层(3)，该有源层在写操作中能够经历局部变形并具有设计为至少在读操作中接收光学辐射(6)的前面(4)，
和半反射层(2)，布置在所述有源层(3)的前面上，
该光学记录介质的特征在于半反射层(2)是锡和碲基合金薄层。
2.如权利要求1所述的介质，特征在于所述合金是锡和碲合金。
3.如权利要求2所述的介质，特征在于所述锡和碲合金中锡原子百分比的比例在40％和60％之间。
4.如权利要求3所述的介质，特征在于所述锡和碲合金中锡原子百分比的比例在45％和55％之间。
5.如权利要求1所述的介质，特征在于所述合金是锡、碲和选自锌和铟的金属的合金。
6.如权利要求5所述的介质，特征在于所述合金中的选自锌和铟的所述金属的原子百分比的比例小于或等于10％。
7.如权利要求1至6中的任何一个所述的介质，特征在于所述有源层(3)的无机材料是碲和锌合金。
8.如权利要求1至6中的任何一个所述的介质，特征在于所述有源层(3)和所述半反射层(2)形成具有小于或等于80nm的厚度的叠层。
9.如权利要求8所述的介质，特征在于所述叠层具有小于或等于50nm的厚度。
10.如权利要求8所述的介质，特征在于所述半反射层(2)和所述有源层(3)都具有20nm的厚度。
11.如权利要求1至6中的任何一个所述的介质，特征在于所述有源层(3)能够经历由加热方法引起的局部变形。
12.如权利要求1至6中的任何一个所述的介质，特征在于所述有源层(3)能够经历由所述有源层(3)的所述前面(4)接收的写光学辐射的作用引起的局部变形。
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| PCT/FR2006/000429 WO2006092483A1 (fr) | 2005-03-03 | 2006-02-24 | Support d’enregistrement optique de donnees comportant une couche semi-reflechissante en alliage a base d’etain et de tellure |
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| JPH0676355A (ja) * | 1992-08-25 | 1994-03-18 | Toshiba Corp | 情報記録媒体 |
| JPH0721585A (ja) * | 1993-06-30 | 1995-01-24 | Sanyo Electric Co Ltd | 光ディスク及び光ディスク装置 |
| JP3499724B2 (ja) * | 1997-05-22 | 2004-02-23 | 花王株式会社 | 光記録媒体 |
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| JP2000322770A (ja) * | 1999-05-12 | 2000-11-24 | Matsushita Electric Ind Co Ltd | 光学情報記録媒体 |
| FR2809856B1 (fr) * | 2000-05-30 | 2002-07-12 | Commissariat Energie Atomique | Supports d'enregistrement optique irreversible |
| JP2003011503A (ja) * | 2001-04-27 | 2003-01-15 | Ricoh Co Ltd | 光記録媒体 |
| CN1284160C (zh) * | 2002-04-09 | 2006-11-08 | 连宥科技股份有限公司 | 光学式可记录媒体 |
| JP2004047046A (ja) * | 2002-05-21 | 2004-02-12 | Ricoh Co Ltd | 光記録媒体 |
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| JP2008533633A (ja) | 2008-08-21 |
| FR2882851B1 (fr) | 2009-05-22 |
| WO2006092483A1 (fr) | 2006-09-08 |
| DE602006003193D1 (de) | 2008-11-27 |
| US7776419B2 (en) | 2010-08-17 |
| US20090181205A1 (en) | 2009-07-16 |
| EP1854097B1 (fr) | 2008-10-15 |
| ATE411593T1 (de) | 2008-10-15 |
| JP4541420B2 (ja) | 2010-09-08 |
| FR2882851A1 (fr) | 2006-09-08 |
| KR20070116809A (ko) | 2007-12-11 |
| CN101133452A (zh) | 2008-02-27 |
| EP1854097A1 (fr) | 2007-11-14 |
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