CN101131966A - Pixel structure manufacturing method - Google Patents
Pixel structure manufacturing method Download PDFInfo
- Publication number
- CN101131966A CN101131966A CNA2007101616877A CN200710161687A CN101131966A CN 101131966 A CN101131966 A CN 101131966A CN A2007101616877 A CNA2007101616877 A CN A2007101616877A CN 200710161687 A CN200710161687 A CN 200710161687A CN 101131966 A CN101131966 A CN 101131966A
- Authority
- CN
- China
- Prior art keywords
- layer
- photoresist
- pixel structure
- production method
- forms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Thin Film Transistor (AREA)
Abstract
The present invention provides a processing method of pixel structure. The method includes following steps: firstly, a substrate is provided and a gate is formed on it; secondly, a gate dielectric layer is formed on the substrate to cover the gate; thirdly, a channel layer, a source and a drain are simultaneously formed on the gate dielectric layer above the gate, in which the source and the drain are located in part region of the channel layer, and the gate, channel layer, source and drain consist a film transistor; fourthly, a protective layer is formed on the gate dielectric layer and the film transistor; fifthly, a beam of laser passing through a first shield is used to illuminate the protective layer for exposing the drain in the protective layer; finally, a pixel electrode is formed on the gate dielectric layer, and is connected to the exposed drain. The pixel structure of the present invention has simple processing method, thus the production cost is reduced.
Description
Technical field
The invention relates to a kind of production method of pixel structure, and particularly make the production method of pixel structure (METHOD FOR MANUFACTURING PIXEL STRUCTURE) of protective layer relevant for a kind of use laser lift-off manufacturing process (laser ablation process).
Background technology
The communication interface of display behaviour and information is the trend of main development at present with the flat-panel screens.Flat-panel screens mainly contains following several: (thin film transistor liquid crystal display) such as organic electro-luminescent display (organicelectroluminescence display), plasma display panel (plasma display panel) and Thin Film Transistor-LCDs.Wherein, being most widely used with Thin Film Transistor-LCD again.Generally speaking, Thin Film Transistor-LCD mainly is made of plurality of groups of substrates of thin-film transistor (thin film transistor array substrate), colorized optical filtering multiple substrate (color filter substrate) and liquid crystal layer (liquid crystal layer).Wherein, plurality of groups of substrates of thin-film transistor comprises the dot structure (pixel unit) that multi-strip scanning line (scan lines), many data wires (data lines) and a plurality of array are arranged, and each dot structure electrically connects with corresponding scanning line and data wire respectively.
Figure 1A～Fig. 1 G is the manufacturing flow chart of existing dot structure.At first, please refer to Figure 1A, a substrate 10 is provided, and on substrate 10, form a grid 20 by the first road light shield manufacturing process.Then, please refer to Figure 1B, on substrate 10, form a gate insulator 30 with cover grid 20.Then, please refer to Fig. 1 C, on gate insulator 30, form a channel layer 40 that is positioned at grid 20 tops by the second road light shield manufacturing process.Generally speaking, the material of channel layer 40 is amorphous silicon (amorphous silicon).Afterwards, please refer to Fig. 1 D, by the 3rd road light shield manufacturing process in the subregion of channel layer 40 with the subregion of gate pole insulating barrier 30 on form an one source pole 50 and a drain electrode 60.By Fig. 1 D as can be known, source electrode 50 is extended on the gate insulator 30 by the both sides of channel layer 40 respectively with drain electrode 60, and the subregion of channel layer 40 is exposed.Then, please refer to Fig. 1 E, on substrate 10, form a protective layer 70 with covering gate insulating barrier 30, channel layer 40, source electrode 50 and drain 60.Then, please refer to Fig. 1 F, by the 4th road light shield manufacturing process with protective layer 70 patternings, in protective layer 70, to form a contact hole H.By Fig. 1 F as can be known, the contact hole H in the protective layer 70 can expose the part district of drain electrode 60.Afterwards, please refer to Fig. 1 G, form a pixel electrode 80 by the 4th road light shield manufacturing process on protective layer 70, by Fig. 1 G as can be known, pixel electrode 80 can see through contact hole H and electrically connect with drain electrode 60.After pixel electrode 80 completes, just finished the making of dot structure 90.
Hold above-mentionedly, existing dot structure 90 mainly is to be made by five road light shield manufacturing process, and in other words, dot structure 90 needs to adopt five light shields (mask) with different pattern to make.Because the cost of light shield is very expensive, and per pass light shield manufacturing process all must use the light shield with different pattern, and therefore, if can't reduce the number of light shield manufacturing process, the manufacturing cost of dot structure 90 can't reduce.
In addition, along with the size of liquid crystal display panel of thin film transistor increases day by day, the light shield size that is used for making plurality of groups of substrates of thin-film transistor also can increase thereupon, and large-sized light shield will be more expensive on cost, make the manufacturing cost of dot structure 90 to reduce effectively.
Summary of the invention
The present invention is about a kind of production method of pixel structure, and it is suitable for reducing cost of manufacture.
For specifically describing content of the present invention, at this a kind of production method of pixel structure is proposed, it provides a substrate earlier, and forms a grid on substrate.Then, form a gate dielectric layer on substrate, with cover gate.Continue it, form a channel layer, one source pole and simultaneously and drain on the gate dielectric layer of grid top, wherein source electrode and drain configuration be in the subregion of channel layer, and grid, channel layer, source electrode and drain electrode formation one thin-film transistor.Then, form a protective layer on gate dielectric layer and thin-film transistor.Then, use a laser via one first shielding irradiation protective layer, so that protective layer exposes drain electrode.Then, form a pixel electrode on gate dielectric layer, and pixel electrode is connected to exposed drain.
In pixel structure preparation method of the present invention, the method for above-mentioned formation grid for example forms a first metal layer earlier in one embodiment on substrate.Then, patterning the first metal layer again is to form grid.In another embodiment, the method for formation grid for example forms a first metal layer earlier on substrate.Then, provide a secondary shielding in the first metal layer top, and secondary shielding expose the first metal layer of part.Then, use laser to shine the first metal layer, to remove secondary shielding institute exposed portions the first metal layer via secondary shielding.
In pixel structure preparation method of the present invention, the method that forms this channel layer, this source electrode and this drain electrode simultaneously then, forms one second metal level on semiconductor layer for example for forming semi-conductor layer earlier on gate dielectric layer.Continue it, form a photoresist layer on second metal level of grid top, wherein photoresist layer can be divided into one first photoresist block and the second photoresist block that is positioned at the first block both sides, and the thickness of the first photoresist block is less than the thickness of the second photoresist block.Then, be that the cover curtain carries out one first etching manufacturing process to second metal level and semiconductor layer with the photoresist layer.Then, reduce the thickness of photoresist layer, removed fully up to the first photoresist block.At last, serve as that the cover curtain carries out one second etching manufacturing process to second metal level with the remaining second photoresist block, so that remaining second metal level constitutes source electrode and drain electrode, and semiconductor layer constitutes channel layer.In other embodiments, the manufacture method of channel layer, source electrode and drain electrode comprises that also elder generation after forming semiconductor layer, forms an ohmic contact layer in semiconductor layer surface.Then, via the first etching manufacturing process and the second etching manufacturing process, remove corresponding to the ohmic contact layer outside the second photoresist block.The method of above-mentioned minimizing photoresist layer thickness comprises carries out an ashing (ashing) manufacturing process.
In pixel structure preparation method of the present invention, form the method for pixel electrode, for example be in one embodiment after removing the first shielding institute exposed portions protective layer, form a conductive layer on protective layer and thin-film transistor.Then, patterned conductive layer again.In another embodiment, the method that forms pixel electrode for example is after removing the first shielding institute exposed portions protective layer, forms a conductive layer on protective layer and thin-film transistor.Then, provide one the 3rd to be shielded from the conductive layer top again, and the 3rd shielding expose the conductive layer of part.Then, re-use laser via the 3rd shielding irradiation conductive layer, to remove shielding institute exposed portions conductive layer.In other embodiments, the method that forms pixel electrode also can be after removing the first shielding institute exposed portions protective layer, forms a photoresist layer on protective layer, and wherein photoresist layer exposes the drain electrode of part.Then, form a conductive layer with protective mulch, drain electrode and photoresist layer.Then, remove photoresist layer so that the conductive layer on the photoresist layer is removed in the lump.The method of above-mentioned formation conductive layer comprises by sputter and forms an indium tin oxide layer or an indium-zinc oxide layer.
In pixel structure preparation method of the present invention, shining in the laser energy of conductive layer for example is to 500mJ/cm between 10
2Between.In addition, Wavelength of Laser for example is between between the 100nm to 400nm.
The mode that the present invention utilizes laser to divest is made protective layer, and makes channel layer, source electrode and drain electrode complete simultaneously, therefore compared to existing pixel structure preparation method, and can the simplified manufacturing technique step and reduce the cost of manufacture of light shield.In addition, when making protective layer, it is simple and easy that laser divests the more existing light shield of employed shielding, so the cost of employed shielding is comparatively cheap in the laser lift-off manufacturing technology steps.
Description of drawings
Figure 1A～Fig. 1 G is the manufacturing flow chart of existing dot structure.
Fig. 2 A～Fig. 2 G is the schematic diagram of a kind of production method of pixel structure of the present invention.
Fig. 3 A～Fig. 3 C is a kind of laser lift-off schematic diagram of fabrication technology that forms grid.
Fig. 4 A～Fig. 4 C is a kind of laser lift-off schematic diagram of fabrication technology that forms pixel electrode.
Fig. 5 A～Fig. 5 C is the another kind of manufacture method schematic diagram that forms pixel electrode.
10,200: substrate
20,212: grid
30: the first dielectric layers
40,232: channel layer
50,242: source electrode
60,244: drain electrode
70: the second dielectric layers
80,282: pixel electrode
90: dot structure
210: the first metal layer
220: gate dielectric layer
230: semiconductor layer
240: the second metal levels
250,250 ': photoresist layer
250a: the first photoresist block
250b: the second photoresist block
260: thin-film transistor
270: protective layer
280: conductive layer
282: pixel electrode
H: contact hole
L: laser
S1: first shielding
S2: secondary shielding
S3: the 3rd shielding
Embodiment
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Fig. 2 A～Fig. 2 G is the schematic diagram of a kind of production method of pixel structure of the present invention.Please refer to Fig. 2 A, a substrate 200 at first is provided, the material of substrate 200 for example is hard or soft materials such as glass, plastics.Then, form a grid 212 on substrate 200.In the present embodiment, can form a first metal layer 210 (being illustrated in Fig. 3 A) earlier on substrate 200, afterwards again with the first metal layer 210 patternings, to form grid 212.In addition, the first metal layer 210 for example is by sputter (sputtering), evaporation (evaporation) or other film deposition techniques is formed, and the patterning of the first metal layer 210 for example is to scribe fabrication technique by photoengraving to carry out.
Then, please refer to Fig. 2 B, on substrate 200, form the gate dielectric layer 220 of a cover gate 212, wherein gate dielectric layer 220 for example is by chemical vapour deposition technique (chemical vapor deposition, CVD) or other suitable film deposition techniques form, and the material of gate dielectric layer 220 for example is dielectric materials such as silica, silicon nitride or silicon oxynitride.Then, on gate dielectric layer 220, form semi-conductor layer 230 and one second metal level 240 in regular turn.In the present embodiment, the material of semiconductor layer 230 for example is amorphous silicon (amorphous silicon) or other semi-conducting material, and the material of second metal level 240 for example is aluminium (Al), molybdenum (Mo), titanium (Ti), neodymium (Nd), above-mentioned nitride such as molybdenum nitride (MoN), titanium nitride (TiN), its lamination, above-mentioned alloy or other electric conducting material.
Then please refer to Fig. 2 C, after forming second metal level 240, on second metal level 240 of grid 212 tops, form a photoresist layer 250.Shown in Fig. 2 C, photoresist layer 250 can be divided into one first photoresist block 250a and the second photoresist block 250b that is positioned at the first photoresist block 250a both sides, and the thickness of the first photoresist block 250a is less than the thickness of the second photoresist block 250b.Then, serve as that the cover curtain carries out one first etching manufacturing process to second metal level 240 with semiconductor layer 230 with photoresist layer 250.
Then, reduce the thickness of photoresist layer 250, removed fully up to the first photoresist block 250a, shown in Fig. 2 D.In the present embodiment, the method for minimizing photoresist layer 250 thickness for example is to adopt the mode of ashing.Please continue the D with reference to Fig. 2, after the first photoresist block 250a is removed fully, serve as that the cover curtain carries out one second etching manufacturing process to second metal level 240 with the remaining second photoresist block 250b again.Afterwards, carry out the manufacturing process of the remaining photoresist layer 250 of a removal again.In the present embodiment, the first etching manufacturing process, the second etching manufacturing process are for example for carrying out a Wet-type etching, and in other embodiments, the etching manufacturing process also can be a dry-etching.In addition, the manufacturing process of removal photoresist layer 250 for example is the Wet-type etching manufacturing process.
Please follow E with reference to Fig. 2, remaining second metal level 240 (being illustrated in Fig. 2 C) constitutes source electrode 242 and drain electrode 244, and semiconductor layer 230 (being illustrated in Fig. 2 C) constitutes channel layer 232, wherein source electrode 242 and drain electrode 244 are disposed at the subregion of channel layer 232, and grid 212, channel layer 232, source electrode 242 and 244 formations, one thin-film transistor 260 that drains.It should be noted that to be different from existingly that channel layer 232 of the present invention, source electrode 242 and drain 244 for what form simultaneously can reduce the light shield manufacturing process one, and reduce the complexity of manufacturing process.In addition, the channel layer 232 of above-mentioned thin-film transistor 260, source electrode 242 for example are by being formed with half mode light shield (half-tone mask) or tone light shield (gray-tone mask) manufacturing process with drain electrode 244.In addition, in other embodiments, forming second metal level 240 and photoresist layer 250 (being illustrated in Fig. 2 C) before, can form an ohmic contact layer (not illustrating) earlier on the surface of semiconductor layer 230, then, remove the ohmic contact layer (not illustrating) of part again by the first etching manufacturing process and the second etching manufacturing process.For example, we can utilize the mode of ion doping (ion doping) to form N type doped region in the surface of semiconductor layer 230, to reduce the contact impedance between the semiconductor layer 230 and second metal level 240.
Then please refer to Fig. 2 F, form a protective layer 270 on gate dielectric layer 220 and thin-film transistor 260.In the present embodiment, the material of protective layer 270 is silicon nitride or silica for example, and the method for its formation for example is to be deposited on the substrate 200 with physical vaporous deposition or chemical vapour deposition technique comprehensively.Tradition uses photoetching and etching manufacturing process to remove partly protective layer 270, and exposes drain electrode 244.What deserves to be mentioned is, the side of semiconductor layer 230 under when exposing drain electrode 244, also exposing, and the etch-rate owing to semiconductor layer 230 on the practice is faster than the etch-rate of the metal material of drain electrode 244, cause semiconductor layer 230 to be easy to generate the side direction recess, so that in the follow-up manufacturing process of pixel deposition electrode 282 (being illustrated in Fig. 2 G), make because of the side direction recess of semiconductor layer 230 that easily pixel electrode 282 (being illustrated in Fig. 2 G) can't engage with drain electrode 244, produce the problem of broken string between drain electrode 244 and the pixel electrode 282 (being illustrated in Fig. 2 G).
The present invention makes protective layer 270 expose drain electrode 244 via a laser lift-off manufacturing process.Wherein, the laser lift-off manufacturing process can be shown in Fig. 2 F, and laser L is via one first shielding S1 irradiation protective layer 270, removing in the partial protection layer 270, and exposes drain electrode 244.In detail, can absorb the energy of laser L and, stay the protective layer 270 that is covered by the first shielding S1 through the postradiation protective layer 270 of laser L, and then the partial protection layer of 244 tops that will drain removes from thin-film transistor 260 sur-face peelings (lift-off).Particularly, the energy that is used for peeling off the laser L of protective layer 270 for example is between 10 to 500mJ/cm2.In addition, the wavelength of laser L for example is between between the 100nm to 400nm.Because the laser lift-off manufacturing process can 244 not exert an influence or destroys with semiconductor layer 230 draining, so pixel electrode 282 (being illustrated in Fig. 2 G) of subsequent deposition, when connecting exposed drain 244, drain electrode 244 is still mild with the side of semiconductor layer 230, can not make pixel electrode 282 (being illustrated in Fig. 2 G) produce broken string.
Please continue 2G, then form a pixel electrode 282 on gate dielectric layer 220, and pixel electrode 282 be connected to exposed drain 244 with reference to figure.In the present embodiment, the method that forms pixel electrode 282 for example is after removing the first shielding S1 institute exposed portions protective layer 270, forms a conductive layer 280 (being illustrated in Fig. 4 A) in protective layer 270 and drain on 244.Then, patterned conductive layer 280 again.Because the protective layer 270 on drain electrode 244 and the semiconductor layer 230 is to utilize the laser lift-off manufacturing process to form, pixel electrode 282 does not have the problem of broken string when connecting exposed drain 244.
Method that it should be noted that above-mentioned formation grid 212 also can be to utilize the laser lift-off manufacturing process to make.Fig. 3 A～Fig. 3 C is a kind of laser lift-off schematic diagram of fabrication technology that forms grid.Please, form a first metal layer 210 on substrate 200 earlier with reference to Fig. 3 A.Then please refer to Fig. 3 B, provide a secondary shielding S2, and secondary shielding S2 exposes the first metal layer 210 of part in the first metal layer 210 tops.Then, use laser L via secondary shielding S2 irradiation the first metal layer 210, to remove secondary shielding S2 institute exposed portions the first metal layer 210.Shown in Fig. 3 C, remaining the first metal layer 210 constitutes grid 212 at last.
In addition, the manufacture method of above-mentioned formation pixel electrode 282 also can utilize the laser lift-off manufacturing process to finish, and Fig. 4 A～Fig. 4 C is a kind of laser lift-off schematic diagram of fabrication technology that forms pixel electrode.Please, after removing the first shielding S1 institute exposed portions protective layer 270, form a conductive layer 280 on protective layer 270 and thin-film transistor 260 earlier with reference to Fig. 4 A.Then shown in Fig. 4 B, provide one the 3rd shielding S3 in conductive layer 280 tops, and the 3rd shielding S3 expose the conductive layer 280 of part.Then, please refer to Fig. 4 C and re-use laser L, to remove the 3rd shielding S3 institute exposed portions conductive layer 280 via the 3rd shielding S3 irradiation conductive layer 280.
Certainly, in other embodiments, the method that forms pixel electrode 282 can also illustrate as Fig. 5 A～Fig. 5 C.Please earlier with reference to Fig. 5 A, after removing the first shielding S1 institute exposed portions protective layer 270, form a photoresist layer 250 ' on protective layer 270, wherein photoresist layer 250 ' exposes the drain electrode 244 of part.Then shown in Fig. 5 B, form a conductive layer 280 with protective mulch 270, drain electrode 244 and photoresist layer 250 '.Then, please refer to Fig. 5 C, remove photoresist layer 250 ' so that the conductive layer 280 on the photoresist layer 250 ' is removed in the lump, and remaining conductive layer 280 promptly constitutes pixel electrode 282.In addition, the method for above-mentioned formation conductive layer 280 for example is to form an indium tin oxide layer or an indium-zinc oxide layer by sputter.In addition, above-mentioned laser lift-off manufacturing process of the present invention also can utilize digit explosure mode (digital exposure) to carry out, and wherein the digit explosure mode for example is to make the automatic location of laser beam and the effect of adjusting energy, carries out laser and divests.
Based on above-mentioned, the present invention makes channel layer, source electrode and drain electrode simultaneously, therefore compared to existing advantage with minimizing manufacturing technology steps.And the present invention adopts the mode of laser L irradiation to form protective layer, but not adopts existing photoengraving to scribe fabrication technique, and therefore production method of pixel structure proposed by the invention has following advantage at least:
The production method of pixel structure that the present invention proposes, its manufacturing method of protective layer need not use lithographic fabrication processes, so compared to the employed high accuracy light shield of lithographic fabrication processes manufacturing process, can reduce the cost of manufacture of light shield.
Because it is less to make the manufacturing process of dot structure, can reduce tediously long light shield manufacturing process (divest as photoresist coating, soft roasting, hard roasting, exposure, development, etching, photoresist etc.) defective that produces when making dot structure.
Laser proposed by the invention divests the partly method of protective layer, can not exert an influence with semiconductor layer to draining or destroy, so the pixel electrode of subsequent deposition, when connecting exposed drain, can not produce the problem of pixel electrode broken string.
Laser proposed by the invention divests the repairing that the method for protective layer partly can be applied to the pixel electrode of pixel in repairing; with in the dot structure manufacturing process; remove the residual pixel electrode (ITOresidue) of possibility, solve the short circuit problem between the pixel electrode, and then increase the production yield.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, thus protection scope of the present invention when with claim the person of being defined be as the criterion.
Claims (14)
1. production method of pixel structure, this method comprises:
One substrate is provided;
Form a grid on described substrate;
Form a gate dielectric layer on described substrate, to cover described grid;
Forming a channel layer, one source pole and simultaneously drains on the described gate dielectric layer of described grid top, wherein said source electrode and described drain configuration are in the subregion of described channel layer, and described grid, described channel layer, described source electrode and described drain electrode constitute a thin-film transistor;
Form a protective layer on described gate dielectric layer and described thin-film transistor;
Use a laser via the described protective layer of one first shielding irradiation, so that described protective layer exposes described drain electrode; And
Form a pixel electrode on described gate dielectric layer, and described pixel electrode is connected to the described drain electrode of exposure.
2. production method of pixel structure as claimed in claim 1, wherein, the method that forms described grid comprises:
Form a first metal layer on described substrate; And
The described the first metal layer of patterning is to form described grid.
3. production method of pixel structure as claimed in claim 1, wherein, the method that forms described grid comprises:
Form a first metal layer on described substrate;
Provide a secondary shielding in described the first metal layer top, and described secondary shielding expose the described the first metal layer of part; And
Use laser to shine described the first metal layer, to remove the described the first metal layer of described secondary shielding institute's exposed portions via described secondary shielding.
4. production method of pixel structure as claimed in claim 1, wherein, the method that forms described channel layer, described source electrode and described drain electrode simultaneously comprises:
Form semi-conductor layer on described gate dielectric layer;
Form one second metal level on described semiconductor layer;
Form a photoresist layer on described second metal level of described grid top, wherein said photoresist layer can be divided into one first photoresist block and the one second photoresist block that is positioned at the described first block both sides, and the thickness of the described first photoresist block is less than the thickness of the described second photoresist block;
With described photoresist layer serves as that the cover curtain carries out one first etching manufacturing process to described second metal level and described semiconductor layer;
Reduce the thickness of described photoresist layer, removed fully up to the described first photoresist block; And
With the remaining described second photoresist block serves as that the cover curtain carries out one second etching manufacturing process to described second metal level, so that remaining described second metal level constitutes described source electrode and described drain electrode, and described semiconductor layer constitutes described channel layer.
5. production method of pixel structure as claimed in claim 4, wherein, the method that forms described channel layer, described source electrode and described drain electrode also comprises:
After forming described semiconductor layer, form an ohmic contact layer in described semiconductor layer surface: and
Via described first etching manufacturing process and the described second etching manufacturing process, remove corresponding to the described ohmic contact layer outside the described second photoresist block.
6. production method of pixel structure as claimed in claim 4, wherein, the method that reduces described photoresist layer thickness comprises carries out an ashing manufacturing process.
7. production method of pixel structure as claimed in claim 1, wherein, the method that forms described pixel electrode comprises:
After removing the described protective layer of described first shielding institute's exposed portions, form a conductive layer on described protective layer and described thin-film transistor; And
The described conductive layer of patterning.
8. production method of pixel structure as claimed in claim 7, wherein, the method that forms described conductive layer comprises by sputter and forms an indium tin oxide layer or an indium-zinc oxide layer.
9. production method of pixel structure as claimed in claim 1, wherein, the method that forms described pixel electrode comprises:
After removing the described protective layer of described first shielding institute's exposed portions, form a conductive layer on described protective layer and described thin-film transistor;
Provide one the 3rd to be shielded from described conductive layer top, and described the 3rd shielding expose the described conductive layer of part; And
Use laser via the described conductive layer of described the 3rd shielding irradiation, to remove the described conductive layer of described shielding institute's exposed portions.
10. production method of pixel structure as claimed in claim 9, wherein, the method that forms described conductive layer comprises by sputter and forms an indium tin oxide layer or an indium-zinc oxide layer.
11. production method of pixel structure as claimed in claim 1, wherein, the method that forms described pixel electrode comprises:
After removing the described protective layer of described first shielding institute's exposed portions, form a photoresist layer on described protective layer, wherein said photoresist layer exposes the described drain electrode of part;
Form a conductive layer, to cover described protective layer, described drain electrode and described photoresist layer; And
Remove described photoresist layer, so that the described conductive layer on the described photoresist layer is removed in the lump.
12. production method of pixel structure as claimed in claim 11, wherein, the method that forms described conductive layer comprises by sputter and forms an indium tin oxide layer or an indium-zinc oxide layer.
13. production method of pixel structure as claimed in claim 1, wherein, the energy of described laser between 10 to 500mJ/cm
2Between.
14. production method of pixel structure as claimed in claim 1, wherein, described Wavelength of Laser is between between the 100nm to 400nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101616877A CN101131966B (en) | 2007-09-28 | 2007-09-28 | Pixel structure manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101616877A CN101131966B (en) | 2007-09-28 | 2007-09-28 | Pixel structure manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101131966A true CN101131966A (en) | 2008-02-27 |
| CN101131966B CN101131966B (en) | 2010-10-06 |
Family
ID=39129161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101616877A Expired - Fee Related CN101131966B (en) | 2007-09-28 | 2007-09-28 | Pixel structure manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101131966B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810571A (en) * | 2012-08-13 | 2012-12-05 | 京东方科技集团股份有限公司 | Substrate, display device and substrate preparation method |
| CN109192759A (en) * | 2018-08-29 | 2019-01-11 | 京东方科技集团股份有限公司 | The preparation method of display panel and display panel |
| CN113270365A (en) * | 2021-05-17 | 2021-08-17 | 京东方科技集团股份有限公司 | Manufacturing method of array substrate and array substrate |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101074389B1 (en) * | 2004-11-05 | 2011-10-17 | 엘지디스플레이 주식회사 | method for etching thin film and method for manufacturing of liquid crystal display device using the same |
| KR101174429B1 (en) * | 2006-01-24 | 2012-08-23 | 삼성전자주식회사 | Thin film transistor and method for manufacturing the same and liquid crystal display having the same |
| CN100444009C (en) * | 2006-07-25 | 2008-12-17 | 友达光电股份有限公司 | Method for forming array substrate |
-
2007
- 2007-09-28 CN CN2007101616877A patent/CN101131966B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102810571A (en) * | 2012-08-13 | 2012-12-05 | 京东方科技集团股份有限公司 | Substrate, display device and substrate preparation method |
| CN102810571B (en) * | 2012-08-13 | 2015-03-11 | 京东方科技集团股份有限公司 | Substrate, display device and substrate preparation method |
| CN109192759A (en) * | 2018-08-29 | 2019-01-11 | 京东方科技集团股份有限公司 | The preparation method of display panel and display panel |
| CN113270365A (en) * | 2021-05-17 | 2021-08-17 | 京东方科技集团股份有限公司 | Manufacturing method of array substrate and array substrate |
| CN113270365B (en) * | 2021-05-17 | 2024-09-10 | 京东方科技集团股份有限公司 | Manufacturing method of array substrate and array substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101131966B (en) | 2010-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105161505B (en) | A kind of array substrate and preparation method thereof, display panel | |
| US5435608A (en) | Radiation imager with common passivation dielectric for gate electrode and photosensor | |
| JP2011155303A (en) | Tft-lcd array substrate and method of manufacturing the same | |
| CN107968097B (en) | Display device, display substrate and manufacturing method thereof | |
| JP4808654B2 (en) | Method for manufacturing array circuit board | |
| CN101556935B (en) | Manufacturing method of thin film transistor array substrate | |
| CN109273458A (en) | Array substrate, manufacturing method thereof and display panel | |
| CN101236932A (en) | Thin film transistor array base plate making method | |
| CN101131966B (en) | Pixel structure manufacturing method | |
| WO2019196191A1 (en) | Method for preparing tft array substrate, tft array substrate, and display panel | |
| CN101118881A (en) | Method for fabricating pixel structure | |
| KR970006733B1 (en) | Thin film transistor manufacturing method | |
| CN101625492B (en) | Manufacturing method of array base plate of film transistor | |
| CN101330062B (en) | Method for preparing thin-film transistor array substrate | |
| CN101197332A (en) | Pixel structure manufacturing method | |
| CN100565845C (en) | Production method of pixel structure | |
| US7648865B1 (en) | Method for manufacturing pixel structure | |
| CN101022093B (en) | Method for producing picture element structure | |
| CN109786323A (en) | The preparation method and tft array substrate of tft array substrate | |
| CN102097390B (en) | Manufacturing method of pixel structure | |
| CN100557787C (en) | Production method of pixel structure | |
| CN100587944C (en) | Pixel structure manufacturing method | |
| CN101645418A (en) | Method for manufacturing basal plate of film transistor array | |
| CN101140913A (en) | Preparation method of pixel structure | |
| CN102903678A (en) | Manufacturing method of pixel structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101006 Termination date: 20200928 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |