CN101197332A - Pixel structure manufacturing method - Google Patents
Pixel structure manufacturing method Download PDFInfo
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- CN101197332A CN101197332A CNA2007103053142A CN200710305314A CN101197332A CN 101197332 A CN101197332 A CN 101197332A CN A2007103053142 A CNA2007103053142 A CN A2007103053142A CN 200710305314 A CN200710305314 A CN 200710305314A CN 101197332 A CN101197332 A CN 101197332A
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Abstract
The invention relates to a manufacturing method of a pixel structure, including the following steps that: firstly, a substrate with a first conductive layer is provided; secondly, a first shade is arranged above the first conductive layer, and laser passes through the first shade to irradiate the first conductive layer, thereby forming a grid electrode; thirdly, a grid electrode insulating layer is formed on the substrate to cover the grid electrode; fourthly, a channel layer, a source electrode and a drain electrode are formed on the grid electrode insulating layer positioned above the grid electrode with the grid electrode, the channel layer, the source electrode and the drain electrode forming a thin film transistor (TFT); fifthly, a patterning protective layer is formed on the TFT and exposes part of the drain electrode; finally, electrical connection is formed on the pixel electrode of the drain electrode. The invention makes the grid electrode in laser stripping mode and ensures that the channel layer, the source electrode and the drain electrode are made at the same time; therefore, compared with the well known manufacturing method of a pixel structure, the invention can simplify processing steps and reduces the manufacturing cost of photomask.
Description
Technical field
The present invention relates to a kind of production method of pixel structure, and be particularly related to the production method of pixel structure that a kind of use laser lift-off (laser ablation process) is made protective layer.
Background technology
The communication interface of display behaviour and information is the trend of main development at present with the flat-panel screens.Flat-panel screens mainly contains following several: (thin film transistor liquid crystal display) such as organic electro-luminescent display (organicelectroluminescence display), plasma scope (plasma display panel) and Thin Film Transistor-LCDs.Wherein, being most widely used with Thin Film Transistor-LCD again.Generally speaking, Thin Film Transistor-LCD mainly is made of thin-film transistor array base-plate (thin film transistor array substrate), colorful filter array substrate (color filter substrate) and liquid crystal layer (liquid crystal layer).Wherein, thin-film transistor array base-plate comprises the dot structure (pixel unit) of multi-strip scanning line (scan lines), many data wires (data lines) and a plurality of arrayed, and each dot structure electrically connects with corresponding scanning line and data wire respectively.
Figure 1A～Fig. 1 G is the manufacturing flow chart of known pixel structure.At first, please refer to Figure 1A, substrate 10 is provided, and on substrate 10, form grid 20 by the first road photo-marsk process.Then, please refer to Figure 1B, on substrate 10, form gate insulator 30 with cover grid 20.Then, please refer to Fig. 1 C, on gate insulator 30, form the channel layer 40 that is positioned at grid 20 tops by the second road photo-marsk process.Generally speaking, the material of channel layer 40 is amorphous silicon (amorphous silicon).Afterwards, please refer to Fig. 1 D, on the subregion of the subregion of channel layer 40 and gate insulator 30, form source electrode 50 and drain 60 by the 3rd road photo-marsk process.By Fig. 1 D as can be known, source electrode 50 is extended on the gate insulator 30 by the both sides of channel layer 40 respectively with drain electrode 60, and the subregion of channel layer 40 is exposed.Then, please refer to Fig. 1 E, on substrate 10, form protective layer 70 with cover gate insulating barrier 30, channel layer 40, source electrode 50 and drain 60.Then, please refer to Fig. 1 F, by the 4th road photo-marsk process with protective layer 70 patternings, in protective layer 70, to form contact hole H.By Fig. 1 F as can be known, the contact hole H in the protective layer 70 can expose the part district of drain electrode 60.Afterwards, please refer to Fig. 1 G, form pixel electrode 80 by the 5th road photo-marsk process on protective layer 70, by Fig. 1 G as can be known, pixel electrode 80 can see through contact hole H and electrically connect with drain electrode 60.After pixel electrode 80 completes, just finished the making of dot structure 90.
Hold above-mentionedly, known dot structure 90 mainly is to make by five road photo-marsk processes, and in other words, dot structure 90 needs to adopt five photomasks (mask) with different pattern to make.Because the cost of photomask is very expensive, and the per pass photo-marsk process must use the photomask with different pattern, and therefore, if can't reduce the number of photo-marsk process, the manufacturing cost of dot structure 90 can't reduce.
In addition, along with the size of liquid crystal display panel of thin film transistor increases day by day, the photomask size that is used for making thin-film transistor array base-plate also can increase thereupon, and large-sized photomask will be more expensive on cost, make the manufacturing cost of dot structure 90 to reduce effectively.
Summary of the invention
The present invention relates to a kind of production method of pixel structure, it is suitable for reducing cost of manufacture.
For specifically describing content of the present invention, at this a kind of production method of pixel structure is proposed, it provides substrate earlier, and forms first conductive layer on substrate, then provide first shade in first conductive layer top, and first shade exposes first conductive layer of part.Use laser to shine first conductive layer, removing first shade institute exposed portions first conductive layer, and form grid through first shade.Afterwards, form gate insulator on substrate, with cover gate.Then, form channel layer, source electrode simultaneously and drain on the gate insulator of grid top, wherein source electrode and drain configuration be in the subregion of channel layer, and grid, channel layer, source electrode and drain electrode formation thin-film transistor.Then, form the patterning protective layer on thin-film transistor, the patterning protective layer exposes the part drain electrode.Then, form the pixel electrode that electrically connects drain electrode.
In pixel structure preparation method of the present invention, the method that forms channel layer, source electrode and drain electrode simultaneously then, forms second conductive layer on semiconductor layer for example for forming semiconductor layer earlier on gate insulator.Continue it, form the photoresist layer on second conductive layer of grid top, wherein the photoresist layer can be divided into the first photoresist block and the second photoresist block that is positioned at the first block both sides, and the thickness of the first photoresist block is less than the thickness of the second photoresist block.Then, be that mask carries out first etch process to second conductive layer and semiconductor layer with the photoresist layer.Then, reduce the thickness of photoresist layer, removed fully up to the first photoresist block.At last, be that mask carries out second etch process to second conductive layer with the remaining second photoresist block, so that remaining second conductive layer constitutes source electrode and drain electrode, and remaining semiconductor layer constitutes channel layer.In other embodiments, the manufacture method of channel layer, source electrode and drain electrode also comprises elder generation after forming semiconductor layer, forms ohmic contact layer in semiconductor layer surface.Then, through first etch process and second etch process, remove corresponding to the ohmic contact layer outside the second photoresist block.The method of above-mentioned minimizing photoresist layer thickness comprises carries out ashing (ashing) technology.
In pixel structure preparation method of the present invention, form the method for patterning protective layer, in one embodiment, for example be to form at the same time after channel layer, source electrode and the drain electrode, form protective layer on gate insulator and thin-film transistor.Then, patterning protective layer again.In another embodiment, the method that forms the patterning protective layer for example is to form at the same time after channel layer, source electrode and the drain electrode, forms protective layer on gate insulator and thin-film transistor.Then, provide second shade in the protective layer top again, and second shade expose the protective layer of part.Then, use laser through second shade irradiation protective layer, to remove second shade institute exposed portions protective layer.In other embodiments, the method that forms the patterning protective layer for example is to form at the same time after channel layer, source electrode and the drain electrode, forms the photoresist layer in the part drain electrode.Then, form protective layer with cover gate insulating barrier, thin-film transistor and photoresist layer.Afterwards, remove the photoresist layer, so that the protective layer on the photoresist layer is removed in the lump.In another embodiment, the method for formation patterning protective layer can also be to form protective layer on gate insulator and the remaining second photoresist block.Afterwards, remove the remaining second photoresist block, so that the protective layer on the second photoresist block is removed in the lump.The above-mentioned method that removes the photoresist layer comprises lifts off technology.
In pixel structure preparation method of the present invention, form the method for pixel electrode, in one embodiment, for example be after forming the patterning protective layer, form electrode material layer on protective layer and thin-film transistor.Then, patterned electrodes material layer again.In another embodiment, the method that forms pixel electrode for example is to form the patterning protective layer, forms electrode material layer on protective layer and thin-film transistor.Then, provide the 3rd shade in the electrode material layer top again, and the 3rd shade expose the electrode material layer of part.Then; re-use laser through the 3rd shade irradiation electrode material layer; to remove shade institute exposed portions electrode material layer; in other embodiments; the method that forms pixel electrode also can be to form the photoresist layer on the patterning protective layer, and wherein the photoresist layer exposes the drain electrode of part.Then, form electrode material layer with overlay pattern protective layer, drain electrode and photoresist layer.Then, remove the photoresist layer so that the electrode material layer on the photoresist layer is removed in the lump.The method of above-mentioned formation electrode material layer comprises by sputter formation indium tin oxide layer or indium-zinc oxide layer.In addition, the above-mentioned method that removes the photoresist layer comprises and lifts off technology.
In pixel structure preparation method of the present invention, the method that forms patterning protective layer and pixel electrode can also for example be after thin-film transistor forms, and forms protective layer on gate insulator and thin-film transistor.Then; form the photoresist layer on protective layer; with the patterning protective layer; the photoresist floor exposes drain electrode and grid contact mat district (the Gate contact pad) of part; wherein the photoresist layer can be divided into the 3rd photoresist block and the 4th photoresist block, and the thickness of the 3rd photoresist block is less than the thickness of the 4th photoresist block.Afterwards, reduce the thickness of photoresist layer, removed fully up to the 3rd photoresist block.Then, form electrode material layer, with overlay pattern protective layer, drain electrode and photoresist layer.Continue it, remove the photoresist layer, so that the electrode material layer on the photoresist layer is removed in the lump.
In pixel structure preparation method of the present invention, shining in the laser energy of first conductive layer for example is between 10mJ/cm
2To 500mJ/cm
2Between.In addition, Wavelength of Laser for example is between between the 100nm to 400nm.
Therefore the present invention utilizes the mode of laser lift-off to make grid, and makes channel layer, source electrode and drain electrode complete simultaneously, than known pixel structure preparation method, can simplify processing step and reduce the cost of manufacture of photomask.In addition, when making grid, the more known high accuracy photomask of the employed shade of laser lift-off is simple and easy, so the cost of employed shade is comparatively cheap in the laser lift-off step.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A～Fig. 1 G is the manufacturing flow chart of known pixel structure.
Fig. 2 A～Fig. 2 I is the schematic diagram of a kind of production method of pixel structure of the present invention.
Fig. 3 A～Fig. 3 C is a kind of laser lift-off schematic diagram that forms the patterning protective layer.
Fig. 4 A～Fig. 4 C is a kind of schematic diagram that forms the manufacture method of patterning protective layer.
Fig. 5 A～Fig. 5 B is a kind of schematic diagram that forms the manufacture method of patterning protective layer.
Fig. 6 A～Fig. 6 C is a kind of laser lift-off schematic diagram that forms pixel electrode.
Fig. 7 A～Fig. 7 C is a kind of schematic diagram that forms the manufacture method of pixel electrode.
Fig. 8 A～Fig. 8 D is a kind of schematic diagram that forms the manufacture method of patterning protective layer and pixel electrode.
And each description of reference numerals in the above-mentioned accompanying drawing is as follows:
10,200 substrates
20,212 grids
30,220 gate insulators
40,232 channel layers
50,242 source electrodes
60,244 drain electrodes
70 protective layers
80,282 pixel electrodes
90 dot structures
210 first conductive layers
230 semiconductor layers
240 second conductive layers
250,252,254 photoresist layers
The 250a first photoresist block
The 250b second photoresist block
250c the 3rd photoresist block
250d the 4th photoresist block
260 thin-film transistors
270 protective layers
272 patterning protective layers
280 electrode material layers
282 pixel electrodes
The H contact openings
L laser
S1 first shade
S2 second shade
S3 the 3rd shade
Embodiment
Fig. 2 A～Fig. 2 G is the schematic diagram of a kind of production method of pixel structure of the present invention.Please refer to Fig. 2 A, substrate 200 at first is provided, the material of substrate 200 for example is hard or soft materials such as glass, plastic cement.Then, form first conductive layer 210 on substrate 200, wherein first conductive layer 210 for example is by sputter (sputtering), evaporation (evaporation) or other film deposition techniques form.
Then, shown in Fig. 2 B, provide the first shade S1, and the first shade S1 exposes first conductive layer 210 of part, and use laser L to shine first conductive layer 210 through the first shade S1 in first conductive layer, 210 tops.In detail, through postradiation first conductive layer 210 of laser L can absorb laser L energy and from substrate 200 sur-face peelings (ablation).Particularly, the energy that is used for peeling off the laser L of first conductive layer 210 for example is between 10mJ/cm
2To 500mJ/cm
2Between.In addition, the wavelength of laser L for example is between between the 100nm to 400nm.
Afterwards, shown in Fig. 2 C, remove after first shade S1 institute exposed portions first conductive layer 210, remaining first conductive layer 210 constitutes grid 212.It should be noted that being different from the photomask that known use involves great expense carries out the making of grid 212, the present invention uses cheap shade S1 to finish the making of grid 212, therefore can save cost.
Then, please refer to Fig. 2 D, on substrate 200, form the gate insulator 220 of cover gate 212, wherein gate insulator 220 for example is by chemical vapour deposition technique (chemical vapor deposition, CVD) or other suitable film deposition techniques form, and the material of gate insulator 220 for example is dielectric materials such as silica, silicon nitride or silicon oxynitride.Then, on gate insulator 220, form the semiconductor layer 230 and second conductive layer 240 in regular turn.In the present embodiment, the material of semiconductor layer 230 for example is amorphous silicon (amorphous silicon) or other semi-conducting materials, and the material of second conductive layer 240 for example is aluminium (Al), molybdenum (Mo), titanium (Ti), neodymium (Nd), above-mentioned nitride such as molybdenum nitride (MoN), titanium nitride (TiN), its lamination, above-mentioned alloy or other electric conducting materials.
Then please refer to Fig. 2 E, after forming second conductive layer 240, on second conductive layer 240 of grid 212 tops, form photoresist layer 250.Shown in Fig. 2 E, photoresist layer 250 can be divided into the first photoresist block 250a and the second photoresist block 250b that is positioned at the first photoresist block 250a both sides, and the thickness of the first photoresist block 250a is less than the thickness of the second photoresist block 250b.Then, be that mask carries out first etch process to second conductive layer 240 with semiconductor layer 230 with photoresist layer 250.
Then, reduce the thickness of photoresist layer 250, removed fully up to the first photoresist block 250a, shown in Fig. 2 F, the method that wherein reduces photoresist layer 250 thickness for example is to adopt the mode of ashing.Please continue the F with reference to Fig. 2, after the first photoresist block 250a is removed fully, be that mask carries out second etch process to second conductive layer 240 with the remaining second photoresist block 250b again.In the present embodiment, first etch process, second etch process are for example for carrying out Wet-type etching, and in other embodiments, etch process also can be a dry-etching.
Afterwards, please refer to Fig. 2 G, after the technology of removing remaining photoresist layer 250, remaining second conductive layer 240 constitutes source electrode 242 and drain electrode 244, and remaining semiconductor layer 230 constitutes channel layer 232, wherein source electrode 242 and drain electrode 244 are disposed at the subregion of channel layer 232, and grid 212, channel layer 232, source electrode 242 and the 244 formation thin-film transistors 260 that drain.In the present embodiment, the technology of removal photoresist layer 250 for example is wet etch process.
It should be noted that to be different from knownly that channel layer 232 of the present invention, source electrode 242 and drain 244 for what form simultaneously can reduce photo-marsk process one, and reduce the complexity of technology.In addition, the channel layer 232 of above-mentioned thin-film transistor 260, source electrode 242 for example are by forming with semi-modulation type photomask (half-tone mask) or tone photomask (gray-tone mask) technology with drain electrode 244.In addition, in other embodiments, forming second conductive layer 240 and photoresist layer 250 (being illustrated in Fig. 2 D) before, can form ohmic contact layer (not illustrating) on the surface of semiconductor layer 230 earlier, then, remove the ohmic contact layer (not illustrating) of part again by first etch process and second etch process.For example, can utilize the mode of ion doping (ion doping) to form N type doped region, to reduce the contact impedance between the semiconductor layer 230 and second conductive layer 240 in the surface of semiconductor layer 230.
Then please refer to Fig. 2 H, form patterning protective layer 272 on thin-film transistor 260, wherein patterning protective layer 272 exposes part drain electrode 244, and shown in Fig. 2 H, patterning protective layer 272 for example is to have the contact openings H that drain electrode 244 is exposed.In the present embodiment, the method that forms patterning protective layer 272 for example is after thin-film transistor 260 forms, and forms protective layer 270 (being illustrated in Fig. 3 A) on thin-film transistor 260 and gate insulator 220.Then, the patterning protective layer 270 again, and wherein the method for patterning protective layer 270 for example is to carry out the photoengraving carving technology.
Then, please refer to Fig. 2 I, form pixel electrode 282 on patterning protective layer 272, in the present embodiment, pixel electrode 282 is to see through contact openings H to be connected to drain electrode 244.In the present embodiment, the method that forms pixel electrode 282 for example is after patterning protective layer 272 forms, and forms electrode material layer 280 in protective layer 270 and drain on 244.Then, the patterned electrodes material layer 280 again, please refer to the description of Fig. 6 A～Fig. 6 C.
In addition, the method for above-mentioned formation patterning protective layer 272 also can utilize laser lift-off to finish, and Fig. 3 A～Fig. 3 C is a kind of laser lift-off schematic diagram that forms the patterning protective layer.Please earlier with reference to Fig. 3 A; after forming thin-film transistor 260; form protective layer 270 on gate insulator 220 and thin-film transistor 260; wherein the material of protective layer 270 is silicon nitride or silica for example, and the method for its formation for example is to be deposited on the substrate 200 with physical vaporous deposition or chemical vapour deposition technique comprehensively.Then, provide the second shade S2 again, and the second shade S2 expose the protective layer 270 of part in protective layer 270 tops as Fig. 3 B.Then, use laser L through second shade S2 irradiation protective layer 270, and through the postradiation protective layer 270 of laser L can absorb laser L energy and from thin-film transistor 260 sur-face peelings.Afterwards, shown in Fig. 3 C, after removing the second shade S2 institute exposed portions protective layer 270, form the patterning protective layer 272 that exposes contact openings H.
Certainly, in other embodiments, the method that forms patterning protective layer 272 can also illustrate as Fig. 4 A～Fig. 4 C.Please earlier with reference to Fig. 4 A, after forming thin-film transistor 260, form photoresist layer 252 and drain on 244 in part.Then shown in Fig. 4 B, form protective layer 270, with cover gate insulating barrier 220, thin-film transistor 260 and photoresist layer 252.Afterwards, shown in Fig. 4 C, remove photoresist layer 252,, form the patterning protective layer 272 that exposes contact openings H so that the protective layer 270 on the photoresist layer 252 is removed in the lump.In the present embodiment, remove the method for photoresist layer 252 for example for lifting off technology.
In addition, Fig. 5 A～Fig. 5 B illustrates the another kind of method that forms the patterning protective layer.Please earlier with reference to Fig. 5 A, the method that forms patterning protective layer 272 can be before removing the residue second photoresist block 250b, forms protective layer 270 on gate insulator 220 and the remaining second photoresist block 250b.Then, please refer to Fig. 5 B, after removing the remaining second photoresist block 250b, make that the protective layer 270 on the second photoresist block 250b is removed in the lump, to form patterning protective layer 272.In the present embodiment, remove the method for photoresist layer 250b for example for lifting off technology.
In addition, the manufacture method of above-mentioned formation pixel electrode 282 also can utilize laser lift-off to finish, and Fig. 6 A～Fig. 6 C is a kind of laser lift-off schematic diagram that forms pixel electrode.Please earlier with reference to Fig. 6 A, after forming patterning protective layer 272, form electrode material layer 280 on patterning protective layer 272, the method that wherein forms electrode material layer 280 for example is to form indium tin oxide layer or indium-zinc oxide layer by sputter.Then, shown in Fig. 6 B, provide the 3rd shade S3 in electrode material layer 280 tops, and the 3rd shade S3 expose the part electrode material layer 280, then use laser L through the 3rd shade S3 irradiation electrode material layer 280.Then, please refer to Fig. 6 C, remove after the 3rd shade S3 institute exposed portions electrode material layer 280, form and see through the pixel electrode 282 that contact openings H is connected to drain electrode 244.
Certainly, in other embodiments, the method that forms pixel electrode 282 can also illustrate as Fig. 7 A～Fig. 7 C.Please earlier with reference to Fig. 7 A, after forming patterning protective layer 272, form photoresist layer 254 on patterning protective layer 272, wherein photoresist layer 254 exposes the drain electrode 244 of part.Then shown in Fig. 7 B, form electrode material layer 280 with overlay pattern protective layer 272, drain electrode 244 and photoresist layer 254.Then, please refer to Fig. 7 C, remove photoresist layer 254, so that the electrode material layer 280 on the photoresist layer 254 is removed in the lump, and remaining electrode material layer 280 promptly constitutes pixel electrode 282.The above-mentioned method that removes the photoresist layer is for example lifted off technology.
In addition, Fig. 8 A～Fig. 8 D illustrates the another kind of method that forms patterning protective layer and pixel electrode.Shown in Fig. 8 A; deposition protective layer 270 is on gate insulator 220 and thin-film transistor 260; on protective layer 270, form photoresist layer 250 then; this photoresist layer 250 can be divided into the 3rd photoresist block 250c and the 4th photoresist block 250d; the 3rd photoresist block 250c is positioned on the edge of drain electrode 244 edges and reservior capacitor C; in order to avoid second conductive layer 240 in subsequent technique; on the thin-film transistor 260 and the gradient of reservior capacitor C, produced gate insulator 220 undercutting (under cut) by over etching in film stack; the 4th photoresist block 250d is positioned on the part thin-film transistor 260; and the thickness of the 3rd photoresist block 250c is less than the thickness of the 4th photoresist block 250d, and wherein the material of photoresist layer 250 for example is an organic material.Then, please refer to Fig. 8 B, is that mask carries out etching to protective layer 270 with photoresist layer 250, makes the drain electrode 244 that exposes part thin-film transistor 260, to form the patterning protective layer 272 shown in Fig. 8 B.
Then, shown in Fig. 8 C, reduce the thickness of photoresist layer 250, removed fully up to the 3rd photoresist block 250c.After the 3rd photoresist block 250c is removed fully; only stay the 4th photoresist block 250d; then deposition of electrode material layer 280 covers on the 4th photoresist block 250d, the drain electrode 244 that exposes part transistor 260, part substrate 200 and the patterning protective layer 272; remove residue photoresist layer 250d then; so that the electrode material layer 280 on the residue photoresist layer 250d is removed simultaneously; and remaining conductive layer promptly constitutes the pixel electrode 282 shown in Fig. 8 D, and electrically connects with the drain electrode 244 of transistor 260.
Based on above-mentioned, the present invention makes channel layer, source electrode and drain electrode simultaneously, therefore than known advantage with minimizing processing step.And the present invention adopts the mode of laser L irradiation to form grid, but not adopts known photoengraving carving technology, and therefore production method of pixel structure proposed by the invention has following advantage at least:
1. the production method of pixel structure that proposes of the present invention, its grid technology need not use photoetching process, so than the employed high accuracy photo-marsk process of photoetching process, can reduce the cost of manufacture of photomask.
2. because to make the technology of dot structure less, can reduce the defective that tediously long photo-marsk process (divest as photoresist coating, soft roasting, hard roasting, exposure, development, etching, photoresist etc.) is produced when making dot structure.
3. the method for laser lift-off partial protection layer proposed by the invention can be applied to the repairing of the pixel electrode in the pixel repairing; with in dot structure technology; remove the residual pixel electrode (ITOresidue) of possibility, solve the short circuit problem between the pixel electrode, and then increase the production qualification rate.
Though the present invention with preferred embodiment openly as above; but it is not in order to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the scope that claim defined of enclosing.
Claims (19)
1. production method of pixel structure comprises:
Substrate is provided;
Form first conductive layer on this substrate;
Provide first shade in this first conductive layer top, and this first shade expose this first conductive layer of part;
Use laser to shine this first conductive layer, removing this first shade institute this first conductive layer of exposed portions, and form grid through this first shade;
Form gate insulator on this substrate, to cover this grid;
Form channel layer, source electrode simultaneously and drain on this gate insulator of this grid top, wherein this source electrode and this drain configuration be in the subregion of this channel layer, and this grid, this channel layer, this source electrode and should drain electrode formation thin-film transistor;
Form the patterning protective layer on this thin-film transistor, this patterning protective layer exposes this drain electrode of part; And
Form pixel electrode, be electrically connected at this drain electrode.
2. production method of pixel structure as claimed in claim 1, the method that wherein forms this channel layer, this source electrode and this drain electrode simultaneously comprises:
Form semiconductor layer on this gate insulator;
Form second conductive layer on this semiconductor layer;
Form the photoresist layer on this second conductive layer of this grid top, wherein this photoresist layer can be divided into the first photoresist block and the second photoresist block that is positioned at these first block both sides, and the thickness of this first photoresist block is less than the thickness of this second photoresist block;
With this photoresist layer is that mask carries out first etch process to this second conductive layer and this semiconductor layer;
Reduce the thickness of this photoresist layer, removed fully up to this first photoresist block; And
With remaining this second photoresist block is that mask carries out second etch process to this second conductive layer, so that remaining this second conductive layer constitutes this source electrode and this drain electrode, and this remaining semiconductor layer constitutes this channel layer.
3. production method of pixel structure as claimed in claim 2, the method that wherein reduces this photoresist layer thickness comprise carries out cineration technics.
4. production method of pixel structure as claimed in claim 2, the method that wherein forms this patterning protective layer comprises:
Form protective layer on this gate insulator and remaining this second photoresist block; And
Remove remaining this second photoresist block, so that this protective layer on this second photoresist block is removed in the lump.
5. production method of pixel structure as claimed in claim 1, the method that wherein forms this patterning protective layer comprises:
Part forms the photoresist layer on should drain;
Form protective layer, to cover this gate insulator, this thin-film transistor and this photoresist layer; And
Remove this photoresist layer, so that this protective layer on this photoresist layer is removed in the lump.
6. production method of pixel structure as claimed in claim 5, the method that wherein removes this photoresist layer comprise lifts off technology.
7. production method of pixel structure as claimed in claim 1, the method that wherein forms this patterning protective layer comprises:
Form protective layer on this gate insulator and this thin-film transistor; And
This protective layer of patterning.
8. production method of pixel structure as claimed in claim 1, the method that wherein forms this patterning protective layer comprises:
Form protective layer on this gate insulator and this thin-film transistor;
Provide second shade in this protective layer top, and this second shade expose this protective layer of part; And
Use laser to shine this protective layer, to remove this second shade institute this protective layer of exposed portions through this second shade.
9. production method of pixel structure as claimed in claim 1, the method that wherein forms this channel layer, this source electrode and this drain electrode also comprises:
After forming this semiconductor layer, form ohmic contact layer in this semiconductor layer surface: and
Through this first etch process and this second etch process, remove corresponding to this ohmic contact layer outside this second photoresist block.
10. production method of pixel structure as claimed in claim 1, the method that wherein forms this pixel electrode comprises:
Form electrode material layer in this patterning protective layer and on should draining; And
This electrode material layer of patterning.
11. comprising by sputter, production method of pixel structure as claimed in claim 10, the method that wherein forms this electrode material layer form indium tin oxide layer or indium-zinc oxide layer.
12. production method of pixel structure as claimed in claim 1, the method that wherein forms this pixel electrode comprises:
Form electrode material layer in this patterning protective layer and on should draining;
Provide the 3rd shade in this conductive layer top, and the 3rd shade expose this electrode material layer of part; And
Use laser to shine this electrode material layer, to remove the 3rd shade institute this electrode material layer of exposed portions through the 3rd shade.
13. comprising by sputter, production method of pixel structure as claimed in claim 12, the method that wherein forms this electrode material layer form indium tin oxide layer or indium-zinc oxide layer.
14. production method of pixel structure as claimed in claim 1, the method that wherein forms this pixel electrode comprises:
Form the photoresist layer on this patterning protective layer, wherein this photoresist layer exposes this drain electrode of part;
Form electrode material layer, to cover this patterning protective layer, this drain electrode and this photoresist layer; And
Remove this photoresist layer, so that this electrode material layer on this photoresist layer is removed in the lump.
15. comprising, production method of pixel structure as claimed in claim 14, the method that wherein removes the photoresist layer lift off technology.
16. comprising by sputter, production method of pixel structure as claimed in claim 14, the method that wherein forms this electrode material layer form indium tin oxide layer or indium-zinc oxide layer.
17. production method of pixel structure as claimed in claim 1, wherein the energy of this laser is between 10mJ/cm
2To 500mJ/cm
2Between.
18. production method of pixel structure as claimed in claim 1, wherein this Wavelength of Laser is between between the 100nm to 400nm.
19. production method of pixel structure as claimed in claim 1, the method that wherein forms this patterning protective layer and this pixel electrode comprises:
Form protective layer on this gate insulator and this thin-film transistor;
Form the photoresist layer on this protective layer, with this protective layer of patterning, this photoresist layer exposes this drain electrode and this gate insulator of part, wherein this photoresist layer can be divided into the 3rd photoresist block and the 4th photoresist block, and the thickness of the 3rd photoresist block is less than the thickness of the 4th photoresist block;
Reduce the thickness of this photoresist layer, removed fully up to the 3rd photoresist block;
Form electrode material layer, to cover this patterning protective layer, this drain electrode and this photoresist layer; And
Remove this photoresist layer, so that this electrode material layer on this photoresist layer is removed in the lump.
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| CNA2007103053142A CN101197332A (en) | 2007-12-26 | 2007-12-26 | Pixel structure manufacturing method |
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| CN 201010588415 Division CN102097390B (en) | 2007-12-26 | 2007-12-26 | Manufacturing method of pixel structure |
| CN201210430684XA Division CN102903678A (en) | 2007-12-26 | 2007-12-26 | Manufacturing method of pixel structure |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101330061B (en) * | 2008-07-22 | 2010-12-08 | 友达光电股份有限公司 | Method for preparing pixel structure |
| US7989243B2 (en) | 2008-07-07 | 2011-08-02 | Au Optronics Corporation | Method for fabricating pixel structure |
| CN104051472A (en) * | 2014-06-19 | 2014-09-17 | 京东方科技集团股份有限公司 | Display device, array substrate and manufacturing method of array substrate |
| WO2016041349A1 (en) * | 2014-09-16 | 2016-03-24 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display device |
-
2007
- 2007-12-26 CN CNA2007103053142A patent/CN101197332A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7989243B2 (en) | 2008-07-07 | 2011-08-02 | Au Optronics Corporation | Method for fabricating pixel structure |
| CN101330061B (en) * | 2008-07-22 | 2010-12-08 | 友达光电股份有限公司 | Method for preparing pixel structure |
| CN104051472A (en) * | 2014-06-19 | 2014-09-17 | 京东方科技集团股份有限公司 | Display device, array substrate and manufacturing method of array substrate |
| WO2016041349A1 (en) * | 2014-09-16 | 2016-03-24 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, and display device |
| US9905591B2 (en) | 2014-09-16 | 2018-02-27 | Boe Technology Group Co., Ltd. | Array substrate comprising separating region and manfacturing method thereof,display apparatus |
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