CN101022093B - Method for producing picture element structure - Google Patents
Method for producing picture element structure Download PDFInfo
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- CN101022093B CN101022093B CN2007100883442A CN200710088344A CN101022093B CN 101022093 B CN101022093 B CN 101022093B CN 2007100883442 A CN2007100883442 A CN 2007100883442A CN 200710088344 A CN200710088344 A CN 200710088344A CN 101022093 B CN101022093 B CN 101022093B
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Abstract
This invention provides a manufacturing method for the pixel structure including the following steps: first of all providing a base plate forming an active component, then forming a pattern protection layer on the base plate and the active component, in which, the pattern protection layer exposes part of the active component and then forming a conduction layer on the pattern protection layer and the conduction layer is connected to the active component, then providing a mask above the conduction layer and exposing part of the conduction layer and using a laser to irradiate on the conduction layer to remove the exposed part of the conduction layer and the rest of which constitutes a pixel electrode connected to the active component electrically.
Description
Technical field
The invention relates to a kind of production method of pixel structure, and the production method of pixel structure of particularly making pixel electrode relevant for a kind of use laser divesting technology (laser ablation process).
Background technology
The communication interface of display behaviour and information is main Development Trend with flat-panel screens at present.Flat-panel screens mainly contains following several kinds: (thin film transistor liquid crystaldisplay) such as organic electro-luminescent display (organicelectroluminescence display), plasma display (plasma display panel) and Thin Film Transistor-LCDs.Wherein, the application with Thin Film Transistor-LCD is the most extensive again.Generally speaking, Thin Film Transistor-LCD mainly is made up of plurality of groups of substrates of thin-film transistor (thin film transistorarray substrate), colorized optical filtering multiple substrate (color filter substrate) and liquid crystal layer (liquid crystal layer).Wherein, Plurality of groups of substrates of thin-film transistor comprises the dot structure (pixel unit) that multi-strip scanning line (scan lines), many data wires (data lines) and a plurality of array are arranged, and each dot structure electrically connects with corresponding scanning line and data wire respectively.
Figure 1A to Fig. 1 G is the manufacturing flow chart of existing dot structure.At first,, a substrate 10 is provided, and on substrate 10, forms a grid 20 through the first road masking process please with reference to Figure 1A.Then, please with reference to Figure 1B, on substrate 10, form a gate insulator 30 with cover grid 20.Then, please with reference to Fig. 1 C, through the second road masking process on gate insulator 30, form one be positioned at grid 20 tops channel layer 40.Generally speaking, the material of channel layer 40 is amorphous silicon (amorphous silicon).Afterwards, please with reference to Fig. 1 D, through the 3rd road masking process in the subregion of channel layer 40 with the subregion of gate insulator 30 on form an one source pole 50 and a drain electrode 60.Can know that by Fig. 1 D source electrode 50 is extended on the gate insulator 30 by the both sides of channel layer 40 respectively with drain electrode 60, and the subregion of channel layer 40 is exposed.Then, please with reference to Fig. 1 E, on substrate 10, form a protective layer 70 with covering gate insulating barrier 30, channel layer 40, source electrode 50 and drain 60.Then, please with reference to Fig. 1 F, through the 4th road masking process with protective layer 70 patternings, in protective layer 70, to form a contact hole H.Can know by Fig. 1 F, in the protective layer 70 contact hole H can drain electrode 60 part district be exposed.Afterwards, please with reference to Fig. 1 G, on protective layer 70, form a pixel electrode 80 through the 4th road masking process, can be known by Fig. 1 G, pixel electrode 80 can electrically connect with drain electrode 60 through contact hole H.After pixel electrode 80 completes, just accomplished the making of dot structure 90.
Hold above-mentionedly, existing dot structure 90 mainly is to make through five road masking process, and in other words, dot structure 90 needs to adopt five masks (mask) with different pattern to make.Because the cost of mask is very expensive, and the per pass masking process all must use the mask with different pattern, and therefore, if can't reduce the number of masking process, the manufacturing cost of dot structure 90 can't reduce.
In addition; Along with the size of liquid crystal display panel of thin film transistor increases day by day; The mask size that is used for making plurality of groups of substrates of thin-film transistor also can increase thereupon, and large-sized mask will be more expensive on cost, make the manufacturing cost of dot structure 90 to reduce effectively.
Summary of the invention
The present invention is about a kind of production method of pixel structure, and it is suitable for reducing cost of manufacture.
For specifically describing content of the present invention, at this a kind of production method of pixel structure is proposed, it provides a substrate earlier, and has been formed with a driving component on the substrate.Then, form a patterning protective layer on substrate and this driving component, wherein this patterning protective layer exposes the driving component of part.Come again, form a conductive layer, the overlay pattern protective layer.Then, provide a mask in the conductive layer top, and mask expose the conductive layer of part; Re-use laser and shine conductive layer via mask; Removing mask institute exposed portions conductive layer, and remaining conductive layer constitutes a pixel electrode, and wherein pixel electrode is connected to driving component.
In pixel structure preparation method of the present invention, above-mentioned driving component on the substrate is provided for example is a thin-film transistor, and the method that forms thin-film transistor for example be earlier formation one grid on substrate.Then, form a gate insulation layer on substrate, make its cover gate.Then, form a channel layer, one source pole and and drain on the gate insulation layer of grid top, wherein source electrode and drain configuration are on the subregion of channel layer.In more detail, the method for above-mentioned formation grid for example is to form a first metal layer earlier on substrate, follows the patterning the first metal layer, to form grid.
In addition, above-mentioned channel layer, source electrode for example are by forming with masking process with the manufacture method of drain electrode.More specifically, the method that forms channel layer, source electrode and drain electrode for example is to form semi-conductor layer earlier on gate insulation layer, then, forms one second metal level on semiconductor layer.Then; Form a photoresist layer on second metal level of grid top; Wherein photoresist layer can be divided into one first photoresist block and the second photoresist block that is positioned at the first block both sides, and the thickness of the first photoresist block is less than the thickness of the second photoresist block.Then, be that mask carries out one first etching technics to second metal level and semiconductor layer with the photoresist layer.Then, reduce the thickness of photoresist layer, removed fully up to the first photoresist block.At last, be that mask carries out one second etching technics to second metal level with the remaining second photoresist block, so that remaining second metal level constitutes source electrode and drain electrode, and semiconductor layer constitutes channel layer.In other embodiments, the manufacture method of channel layer, source electrode and drain electrode comprises that also elder generation after forming semiconductor layer, forms an ohmic contact layer in semiconductor layer surface.Then, via first etching technics and second etching technics, remove corresponding to the ohmic contact layer outside the second photoresist block.The method of above-mentioned minimizing photoresist layer thickness comprises carries out an ashing (ashing) technology.
In pixel structure preparation method of the present invention, form the method for patterning protective layer; For example be to form a dielectric layer on gate insulation layer and the remaining second photoresist block in one embodiment; Then; Remove remaining this second photoresist block, so that this dielectric layer on this second photoresist block is removed to become a patterning protective layer in the lump, the method that wherein removes remaining this second photoresist block comprises lifts off technology.In another embodiment, for example be to form, more specifically through chemical wet etching technology; After finishing first and second etching technics and removing the remaining second photoresist block; Form earlier a dielectric layer on gate insulation layer, and dielectric layer covers thin-film transistor, then; In dielectric layer, form a contact hole, to expose the drain electrode of part.
In pixel structure preparation method of the present invention, the method that forms conductive layer for example is to form an indium tin oxide layer or an indium-zinc oxide layer through sputter.
In pixel structure preparation method of the present invention, shining in the laser energy of conductive layer for example is to 500mJ/cm between 10
2Between.In addition, Wavelength of Laser for example is between between the 100nm to 400nm.
The present invention utilizes the mode of laser lift-off (laser ablation) to make pixel electrode, compared to existing pixel structure preparation method, can reduce processing step and mask fabrication cost.In addition, when making pixel electrode, the employed mask of laser lift-off is less, so the cost of employed mask is comparatively cheap in the processing step.
Description of drawings
Figure 1A～Fig. 1 G is the manufacturing flow chart of existing dot structure.
Fig. 2 is the manufacturing flow chart of dot structure of the present invention.
Fig. 3 A～Fig. 3 I is the sketch map of production method of pixel structure in the first embodiment of the present invention.
Fig. 4 is the wavelength of use laser L and the graph of a relation of conductive layer absorptivity.
Fig. 5 A～Fig. 5 H is the sketch map of production method of pixel structure in the second embodiment of the present invention.
Drawing reference numeral:
10,200: substrate 20,222: grid
Dielectric layer 40,226 ' in 30: the first: channel layer
50,228a: source electrode 60,228b: drain electrode
Dielectric layer 80,260 ' in 70: the second: pixel electrode
90: dot structure 220: driving component
224: gate insulation layer 226: semiconductor layer
230a: the first photoresist block 230b: the second photoresist block
240: dielectric layer 250: contact hole
260: conductive layer L: laser
M: mask
Embodiment
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts preferred embodiment, and cooperates appended graphicly, elaborates as follows.
Fig. 2 is the manufacturing flow chart of dot structure of the present invention.Please with reference to Fig. 2, production method of pixel structure of the present invention comprises the following steps: at first, and a substrate is provided, and has been formed with a driving component (S110) on the substrate.Then, form a patterning protective layer on substrate, wherein the patterning protective layer covers driving component, and exposes the driving component (S120) of part.Afterwards, form a conductive layer (S130) on the patterning protective layer, and provide a mask, and mask exposes the conductive layer (S140) of part in the conductive layer top.Then, use laser to shine conductive layer via mask, removing mask institute exposed portions conductive layer, and remaining conductive layer constitutes a pixel electrode, and wherein pixel electrode is connected to driving component (S150).For the present invention can below will be enumerated a plurality of embodiment and carry out detailed explanation around those who familiarize themselves with the technology enough understanding easily.
First embodiment
Fig. 3 A～Fig. 3 I is the sketch map of production method of pixel structure in the first embodiment of the present invention.Please with reference to Fig. 3 A, a substrate 200 is provided at first, the material of substrate 200 for example is hard or soft materials such as glass, plastics.Then, on substrate 200, form a grid 222.Present embodiment can form a first metal layer earlier on substrate 200, afterwards again with the first metal layer patterning, to form grid 222.Wherein, the first metal layer for example is through sputter (sputtering), evaporation (evaporation) or other film deposition techniques forms, and the patterning of the first metal layer for example is through carrying out through chemical wet etching technology.
Then, on substrate 200, form the gate insulation layer 224 of a cover grid 222 please with reference to Fig. 3 B.In the present embodiment; Gate insulation layer 224 for example is through chemical vapour deposition technique (chemical vapordeposition; CVD) or other suitable film deposition techniques form, and the material of gate insulation layer 224 for example is dielectric materials such as silica, silicon nitride or silicon oxynitride.Then, on gate insulation layer 224, form semi-conductor layer 226 and one second metal level 228 in regular turn.In the present embodiment; The material of semiconductor layer 226 for example is amorphous silicon (amorphous silicon) or other semi-conducting material, and the material of second metal level 228 for example is aluminium (Al), molybdenum (Mo), titanium (Ti), neodymium (Nd), above-mentioned nitride such as molybdenum nitride (MoN), titanium nitride (TiN), its lamination, above-mentioned alloy or other electric conducting material.
Then, after forming second metal level 228, then on second metal level 228 of grid 222 tops, form a photoresist layer 230 please with reference to Fig. 3 C.Can know that by Fig. 3 C photoresist layer 230 can be divided into one first photoresist block 230a and the second photoresist block 230b that is positioned at the first block both sides, and the thickness of the first photoresist block 230a is less than the thickness of the second photoresist block 230b.Afterwards, be that mask carries out one first etching technics to second metal level 228 with semiconductor layer 226 with photoresist layer 230.After first etching technics finished, second metal level 228 that is not covered by photoresist layer 230 just was removed with semiconductor layer 226.Then, continue to reduce the thickness of photoresist layer 230, removed fully up to the first photoresist block 230a, in the present embodiment, the method that reduces photoresist layer 230 thickness for example is to adopt the mode of ashing (ashing).After the first photoresist block 230a is removed fully, be that mask carries out one second etching technics to second metal level 228 with the remaining second photoresist block 230b again.After second etching technics was accomplished, part second metal level 228 that is not covered by the second photoresist block 230b was removed, with synchronous formation source electrode 228a, drain electrode 228b and channel layer 226 ' (being illustrated like Fig. 3 D).
In the present embodiment, first etching technics, second etching technics are for example for carrying out a wet etching, and in other embodiments, etching technics also can be a dry etching.In addition, the technology of removal photoresist layer 230 for example is wet etching technology.
Please with reference to Fig. 3 D, after finishing first and second etching technics and removing remaining photoresist layer 230, driving component 220 just completes haply.In the present embodiment, driving component 220 for example is a thin-film transistor, yet the present invention does not limit the kenel of driving component 220.Can know that by Fig. 3 C and Fig. 3 D the channel layer 226 ' in the driving component 220, source electrode 228a for example are through forming with half mode mask (half-tone mask) or tone mask (gray-tone mask) technology with drain electrode 228b.And in other embodiments; Forming second metal level 228 and photoresist layer 230 (being illustrated in Fig. 3 C) before; Can form an ohmic contact layer (not illustrating) earlier on the surface of semiconductor layer 226; Then, remove the ohmic contact layer (not illustrating) of part again through first etching technics and second etching technics.For example, the mode of ion doping capable of using (ion doping) forms N type doped region in the surface of semiconductor layer 226, to reduce the contact impedance between the semiconductor layer 226 and second metal level 228.
Then, on substrate 200, form the dielectric layer 240 of a covering driving component 220 please with reference to Fig. 3 E.In the present embodiment, the material of dielectric layer 240 is silicon nitride or silica for example, and the method for its formation for example is to be deposited on the substrate 200 with physical vaporous deposition or chemical vapour deposition technique comprehensively.
Then please refer to Fig. 3 F, with dielectric layer 240 patternings, to form patterning protective layer 240 '.Can know to have a contact hole 250 by Fig. 3 F, to expose the drain electrode 228b of driving component 220 partly in patterning protective layer 240 '.In the present embodiment, for example can adopt chemical wet etching technology to make contact hole 250.
Please continue 3G, go up at patterning protective layer 240 ' and form a conductive layer 260 comprehensively, and conductive layer 260 can be connected to the drain electrode 228b of driving component 220 via contact hole 250 with reference to figure.In the present embodiment, the method for formation conductive layer 260 for example is to form an indium tin oxide layer (ITOlayer) or an indium-zinc oxide layer (IZO layer) through sputtering technology.
Then, provide a mask M, and mask M exposes the conductive layer 260 of part, then, use laser L via mask M irradiation conductive layer 260, to remove mask M institute exposed portions conductive layer 260 in conductive layer 260 tops please with reference to Fig. 3 H.In the present embodiment, being used for the energy of laser L of released part conductive layer 260 for example is to 500mJ/cm between 10
2Between.In addition, the wavelength of laser L for example is between between the 100nm to 400nm.
Fig. 4 by on the practice wavelength and the graph of a relation of conductive layer 260 absorptivities of use laser L, in the present embodiment, employed conductive layer 260 is an indium tin oxide layer (ITO).
Please with reference to Fig. 3 I, can absorb the energy of laser L and, and stay the conductive layer 260 that is covered by mask M through the postradiation conductive layer 260 of laser L, and then constitute a pixel electrode 260 ' from patterning protective layer 240 ' sur-face peeling (lift-off).Can know that by Fig. 3 I pixel electrode 260 ' is connected with the drain electrode 228b of driving component 220 through the contact hole 250 in the patterning protective layer 240 '.
Second embodiment
Fig. 5 A～Fig. 5 H is the sketch map of production method of pixel structure in the second embodiment of the present invention.Because the step of Fig. 5 A～Fig. 5 C is similar with Fig. 3 A～Fig. 3 C of first embodiment, so locate that the descriptions thereof are omitted.
Please with reference to Fig. 5 D; After second etching technics finishes; Part second metal level 228 that is not covered by the second photoresist block 230b and the part semiconductor layer 226 that is not covered by second metal level 228 just can be removed, with synchronous formation source electrode 228a, drain electrode 228b and channel layer 226 '.
Then please with reference to Fig. 5 E; Forming source electrode 228a, drain electrode 228b and channel layer 226 ' afterwards; Then form a dielectric layer 240, to cover the second photoresist block 230b, the channel layer 226 ' that is not covered by the second photoresist block 230b and the gate insulation layer 224 that is not covered by channel layer 226 '.
Then, remove the remaining second photoresist block 230b, so that the dielectric layer 240 on the second photoresist block 230b is removed in the lump please with reference to Fig. 5 F.After the second photoresist block 230b was removed, dielectric layer 240 just is patterned became a patterning protective layer 240 ', and source electrode 228a, the drain electrode 228b can be exposed to outside the patterning protective layer 240 '.In the present embodiment, the mode that the second photoresist block 230b is removed for example is to lift off technology (lift-off process).It should be noted that because the employed photoresist layer 230 of present embodiment can be used for forming source electrode 228a, drain electrode 228b, channel layer 226 ' and patterning protective layer 240 ', therefore can reduce manufacturing cost effectively.
Then, upward form a conductive layer 260 at patterning protective layer 240 ', and conductive layer 260 can be connected directly to the drain electrode 228b of driving component 220 please with reference to Fig. 5 G comprehensively.Afterwards, provide a mask M, and mask M exposes the conductive layer 260 of part, then, use laser L via mask M irradiation conductive layer 260, to remove mask M institute exposed portions conductive layer 260 in conductive layer 260 tops.In the present embodiment, being used for the energy of laser L of released part conductive layer 260 for example is to 500mJ/cm between 10
2Between.In addition, the wavelength of laser L for example is between between the 100nm to 400nm.
Then please with reference to Fig. 5 H, can absorb the energy of laser L and, and stay the conductive layer 260 that is covered by mask M through the postradiation conductive layer 260 of laser L, and then constitute a pixel electrode 260 ' from patterning protective layer 240 ' sur-face peeling (lift-off).Can know that by Fig. 5 H pixel electrode 260 ' can directly be connected with the drain electrode 228b of driving component 220.
In sum, because the present invention adopts the mode of laser radiation to form pixel electrode, but not adopt existing chemical wet etching technology, therefore production method of pixel structure proposed by the invention has advantage at least:
1. the production method of pixel structure that proposes of the present invention, its pixel electrode technology need not used photoetching process, so compared to the employed high accuracy masking process of photoetching process, can reduce the cost of manufacture of mask.
2. because to make the technology of dot structure less, can reduce tediously long masking process (divest like photoresist coating, soft roasting, hard roasting, exposure, development, etching, photoresist etc.) when making dot structure the generation defective.
3. the laser lift-off proposed by the invention partly method of pixel electrode can be applied to the pixel repairing; With in dot structure technology; Remove the residual pixel electrode (ITO residue) of possibility, solve the short circuit problem between the pixel electrode, and then increase the production yield.
Though the present invention discloses as above with preferred embodiment; Right its is not in order to limit the present invention; Has common knowledge the knowledgeable in the technical field under any; Do not breaking away from the spirit and scope of the present invention, when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking the claim person of defining.
Claims (18)
1. a production method of pixel structure is characterized in that, this production method of pixel structure comprises:
One substrate is provided, and has been formed with a driving component on this substrate;
Form a patterning protective layer on this substrate and this driving component, wherein this patterning protective layer exposes the driving component of part;
Form a conductive layer on this patterning protective layer;
Provide a mask in this conductive layer top, and this mask expose the conductive layer of part; And
Use laser via this this conductive layer of mask irradiation, removing this mask institute exposed portions conductive layer, and remaining this conductive layer constitutes a pixel electrode, and wherein this pixel electrode is connected to described driving component;
Wherein, the energy of described laser between 10 to 500mJ/cm
2Between, described Wavelength of Laser is between between the 100nm to 400nm.
2. production method of pixel structure as claimed in claim 1 is characterized in that, described driving component is a thin-film transistor.
3. production method of pixel structure as claimed in claim 2 is characterized in that, the method that forms described thin-film transistor comprises:
Form a grid on described substrate;
Form a gate insulation layer on this substrate, make it cover described grid; And
Form a channel layer, one source pole and and drain on the gate insulation layer of described grid top, wherein this source electrode and this drain configuration are in the subregion of this channel layer.
4. production method of pixel structure as claimed in claim 3 is characterized in that, the method that forms described grid comprises:
Form a first metal layer on described substrate; And
This first metal layer of patterning is to form described grid.
5. production method of pixel structure as claimed in claim 3 is characterized in that, described channel layer, source electrode and drain electrode are by forming with masking process.
6. production method of pixel structure as claimed in claim 3 is characterized in that, the method that forms described channel layer, source electrode and drain electrode comprises:
Form semi-conductor layer on described gate insulation layer;
Form one second metal level on this semiconductor layer;
Form a photoresist layer on second metal level of described grid top; Wherein this photoresist layer can be divided into one first photoresist block and the one second photoresist block that is positioned at these first block both sides, and the thickness of this first photoresist block is less than the thickness of this second photoresist block;
With described photoresist layer is that mask carries out one first etching technics to described second metal level and semiconductor layer;
Reduce the thickness of described photoresist layer, removed fully up to the described first photoresist block; And
With the remaining described second photoresist block is that mask carries out one second etching technics to described second metal level, so that remaining second metal level constitutes described source electrode and drain electrode, and described semiconductor layer constitutes described channel layer.
7. production method of pixel structure as claimed in claim 6 is characterized in that, the method that forms described channel layer, source electrode and drain electrode also comprises:
After forming described semiconductor layer, form an ohmic contact layer in this semiconductor layer surface: and
Via described first etching technics and second etching technics, remove corresponding to the ohmic contact layer outside the described second photoresist block.
8. production method of pixel structure as claimed in claim 6 is characterized in that, the method that reduces described photoresist layer thickness comprises carries out a cineration technics.
9. production method of pixel structure as claimed in claim 1 is characterized in that, the method that forms described conductive layer comprises through sputter and forms an indium tin oxide layer or an indium-zinc oxide layer.
10. a production method of pixel structure is characterized in that, this production method of pixel structure comprises:
One substrate is provided;
Form a grid on this substrate;
Form a gate insulation layer on this substrate, make it cover this grid;
Form a channel layer, one source pole and simultaneously and drain on the gate insulation layer of this grid top, wherein this source electrode and drain configuration be in the subregion of this channel layer, and described grid, channel layer, source electrode and drain electrode formation one thin-film transistor;
Form a patterning protective layer on described gate insulation layer and thin-film transistor;
Form a conductive layer, to cover described patterning protective layer;
Provide a mask in described conductive layer top, and this mask expose the conductive layer of part; And
Use laser to shine described conductive layer via described mask, removing this mask institute exposed portions conductive layer, and remaining conductive layer constitutes a pixel electrode, and wherein this pixel electrode is connected to described drain electrode;
Wherein, the energy of described laser between 10 to 500mJ/cm
2Between, described Wavelength of Laser is between between the 100nm to 400nm.
11. production method of pixel structure as claimed in claim 10 is characterized in that, the method that forms described grid comprises:
Form a first metal layer on described substrate; And
This first metal layer of patterning is to form described grid.
12. production method of pixel structure as claimed in claim 10 is characterized in that, the method that forms described channel layer, source electrode and drain electrode comprises:
Form semi-conductor layer on described gate insulation layer;
Form one second metal level on this semiconductor layer;
Form a photoresist layer on second metal level of described grid top; Wherein this photoresist layer can be divided into one first photoresist block and the one second photoresist block that is positioned at these first block both sides, and the thickness of this first photoresist block is less than the thickness of the second photoresist block; And
With described photoresist layer is that mask carries out one first etching technics to described second metal level and semiconductor layer;
Reduce the thickness of described photoresist layer, removed fully up to the described first photoresist block; And
With the remaining second photoresist block is that mask carries out one second etching technics to described second metal level, so that remaining second metal level constitutes described source electrode and drain electrode, and described semiconductor layer constitutes channel layer.
13. production method of pixel structure as claimed in claim 12 is characterized in that, the method that forms described patterning protective layer comprises:
Form a dielectric layer on described gate insulation layer and the remaining second photoresist block; And
Remove the remaining second photoresist block, so that the dielectric layer on this second photoresist block is removed in the lump.
14. production method of pixel structure as claimed in claim 13 is characterized in that, the method that removes the remaining second photoresist block comprises lifts off technology.
15. production method of pixel structure as claimed in claim 12 is characterized in that, the method that forms described channel layer, source electrode and drain electrode also comprises:
After forming described semiconductor layer, form an ohmic contact layer in this semiconductor layer surface: and
Via described first etching technics and second etching technics, remove corresponding to the ohmic contact layer outside the described second photoresist block.
16. production method of pixel structure as claimed in claim 12 is characterized in that, the method that reduces described photoresist layer thickness comprises carries out a cineration technics.
17. production method of pixel structure as claimed in claim 10 is characterized in that, the method that forms described patterning protective layer comprises:
Form a dielectric layer on described gate insulation layer, and this dielectric layer covers described thin-film transistor; And
In described dielectric layer, form contact hole, to expose the drain electrode of part.
18. production method of pixel structure as claimed in claim 10 is characterized in that, the method that forms described conductive layer comprises through sputter and forms an indium tin oxide layer or an indium-zinc oxide layer.
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| CN2007100883442A CN101022093B (en) | 2007-03-16 | 2007-03-16 | Method for producing picture element structure |
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