CN101123196A - Method for making lead and tin alloy protruding point - Google Patents
Method for making lead and tin alloy protruding point Download PDFInfo
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- CN101123196A CN101123196A CNA2006100299146A CN200610029914A CN101123196A CN 101123196 A CN101123196 A CN 101123196A CN A2006100299146 A CNA2006100299146 A CN A2006100299146A CN 200610029914 A CN200610029914 A CN 200610029914A CN 101123196 A CN101123196 A CN 101123196A
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/0502—Disposition
- H01L2224/05022—Disposition the internal layer being at least partially embedded in the surface
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05571—Disposition the external layer being disposed in a recess of the surface
- H01L2224/05572—Disposition the external layer being disposed in a recess of the surface the external layer extending out of an opening
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
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- H01L2224/1147—Manufacturing methods using a lift-off mask
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/13139—Silver [Ag] as principal constituent
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
The present invention provides a pewter bump manufacturing method comprising the following steps: to deposit an under bump metal layer on wafer; to form a photoresist layer on the under bump metal layer, and to form a photoresist opening by exposure and develop; to form a transitional pewter layer on the under bump metal layer located at the photoresist opening; to electroplate a wiping solder on the transitional pewter layer; to remove the photoresist and the under bump metal layer; to backflow the wiping solder to form pewter bump. The process of forming the transitional pewter layer is of an electroplating process, the electric current density is 0.1A/dm2 to 1A/dm2, and the time is 1-5 minutes. The density of the formed transitional pewter layer is 0.2um to 4um. The method of the present invention avoids bubble formation in pewter bump solder in electroplating process.
Description
Technical field
The present invention relates to the convex point production method in the manufacture of semiconductor, in particular, relate to a kind of method for making lead and tin alloy protruding point, avoid electroplating in the process of salient point scolder and in scolder, produce bubble.
Background technology
Along with the continuous development of integrated circuit technique, electronic product more and more develops to miniaturization, intellectuality, high-performance and high reliability direction.And the integrated circuit encapsulation not only directly affects integrated circuit, electronic module and even machine performance, but also is restricting miniaturization, low cost and the reliability of whole electronic system.Progressively dwindle in the integrated circuit (IC) wafer size, under the situation that integrated level improves constantly, electronics industry to the proposition of integrated circuit encapsulation technology more and more higher requirement.
Flip chip (flip chip) technology is the soldered ball that forms by in wafer surface, the wafer upset is formed with base plate to be connected, thereby reduce package dimension, satisfy the high-performance (as high speed, high frequency, littler pin) of electronic product, the requirement of little profile, make product have good electric property and heat transfer property.
Stud bump making technology (bump) is a key technology in the flip chip.Salient point be scolder by certain process deposits on the wafer interconnect metal level, the metal soldered ball that reflux to form through uniform temperature.Before stud bump making, as shown in Figure 1, wafer 1 has been finished passivation layer 2 and interconnecting metal layer 3 technologies, enters after the stud bump making, need form a ubm layer 6 (Under-BumpMetallurgy in wafer surface; UBM), on ubm layer 6, form a photoresist layer then, and expose, develop to form required salient point pattern; Form the salient point scolder then, the technology that forms the salient point scolder comprises the metal mask evaporation, electroplates Bumping Technology, laser ball implanting technology, mould printing technology etc.; At last, remove photoresist layer and ubm layer 6, solder reflow forms soldered ball 4 at a certain temperature.
Terne metal is to be used for the prevailing convex point material of flip-chip method now.The lead and tin alloy protruding point king will be used on the plate upside-down mounting or encapsulation upside-down mounting aspect since have cheap, from smooth and self-adjusting current characteristics, provide and more can make and firmer upside-down mounting welding procedure, therefore become the most frequently used solder bump.At present mainly comprise 95wt%Pb, 5wt%Sn and 97wt%Pb, 3wt%Sn and congruent melting 37wt%Pb, 63wt%Sn alloy as the terne metal of salient point scolder.Because advantages such as electroplating technology has the processing of being easy to, cost is low, can be mass-produced, lead and tin alloy protruding point generally adopt the electroplating technology deposition.
But owing to have difference between the sedimentation potential of the hydrogen-evolution overpotential of ubm layer and salient point solder layer metal, in the process of electroplating the salient point scolder, can generate a large amount of bubbles, the bubble that has part not select just is adsorbed in the salient point scolder, in backflow processing procedure subsequently, along with the bubble in the increase salient point scolder of temperature increases, thereby cause salient point to become big or in salient point, form hole, make the welding performance variation of salient point.
In pedestal, form bigger bubble, application number provides a kind of formation method of salient point for 03159833 Chinese patent application file, attempt forming pedestal by the mould printing technology, concrete processing step is 1) on pad, form first solder layer of thinner thickness by printing; 2) by first solder layer of counter-current welding equipment fusing thinner thickness, on pad, form thin soldering-tin layer (end soldering-tin layer).At this moment, the surface oxidation of the pad of Copper Foil becomes cupric oxide, and during the fusing of first solder layer, solder flux and cupric oxide reaction generate gas and water, and still, because become thin soldering-tin layer, gas is selected, and becomes the state that does not have bigger bubble in soldering-tin layer; 3) pass through second solder layer that printing forms the ratio first scolder bed thickness on the soldering-tin layer; 4) second solder layer and the soldering-tin layer that thickness is thicker melts by counter-current welding equipment, forms pedestal on pad.At this moment, second solder layer that has a lot of solder flux is not because the existence of end soldering-tin layer can be reacted with pad, and therefore, even the fusing of second solder layer can not produce gas and water yet, thereby can make in the pedestal does not have than air pocket.But said method can only be eliminated bigger bubble, and through twice printing, twice backflow, technology more complicated.
Also attempt in the prior art using 0.5 to 1A/dm
2The method of current density electroplating lead tin alloy scolder eliminate bubble in the lead and tin alloy protruding point, but electric current is low excessively, rate of deposition is slack-off, the production cycle is elongated, the output capacity step-down, labour cost strengthens; If improve the current density of electroplating, can't avoid in solder bump, forming bubble again.
Summary of the invention
The technical problem that the present invention solves is that prior art can produce bubble in the process of utilizing galvanoplastic deposition lead and tin alloy protruding point in wiping solder, thereby cause the diameter of the diameter of the lead and tin alloy protruding point of formation after the backflow processing procedure, and in lead and tin alloy protruding point, produce hole greater than setting.
For addressing the above problem, the invention provides a kind of method for making lead and tin alloy protruding point, comprise the following steps:
On wafer, deposit ubm layer;
On ubm layer, form photoresist layer, also form the photoresist opening by exposure and development;
On the ubm layer of photoresist aperture position, form the transition layer of lead-tin alloy;
Electroplating lead tin alloy scolder on the transition layer of lead-tin alloy;
Remove photoresist and ubm layer;
The backflow wiping solder forms lead and tin alloy protruding point.
The described technology that forms the transition layer of lead-tin alloy on the ubm layer of photoresist aperture position is electroplating technology.
The power on current density of terne plating of described ubm layer at the photoresist aperture position is 0.1A/dm
2To 1A/dm
2Further, the current density of plating transition layer of lead-tin alloy is 0.5A/dm
2To 1A/dm
2
The described time of electroplating formation transition layer of lead-tin alloy on the ubm layer of photoresist aperture position is 1 minute to 5 minutes.Further, the time of plating transition layer of lead-tin alloy is 1 minute to 2 minutes.
The electroplating solution that described deposit lead tin alloy solder adopts is identical with the electroplating solution of electroplating formation transition layer of lead-tin alloy.
Described transition terne metal layer thickness is 0.2um to 4um.Further, described transition terne metal layer thickness is 0.5um to 2um.
Described transition layer of lead-tin alloy is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn or congruent melting 37wt%Pb, 63wt%Sn alloy.
Described on the transition layer of lead-tin alloy current density of electroplating lead tin alloy scolder be 3A/dm
2To 10A/dm
2
Described wiping solder is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn or congruent melting 37wt%Pb, 63wt%Sn alloy.
Compared with prior art, the present invention has the following advantages:
1, method for making lead and tin alloy protruding point of the present invention, on the ubm layer of photoresist aperture position, form the transition layer of lead-tin alloy, the tin alloy solder of re-plating deposit lead subsequently, avoided prior art directly on the ubm layer of photoresist opening part, to produce the phenomenon of bubble in the electroplating lead tin alloy process, thereby avoid in the processing procedure of backflow wiping solder, forming bigger lead and tin alloy protruding point or in lead and tin alloy protruding point, forming hole, improved the welding performance of lead and tin alloy protruding point.
2, to form the technology of transition layer of lead-tin alloy be electroplating technology in the present invention, current density 0.1 to 1A/dm
2Between, can't in electroplating process, produce bubble; Subsequently 3 to 10A/dm
2Current density deposit wiping solder, the electroplating solution that adopts is identical with the plating bath of electroplating formation transition layer of lead-tin alloy, only needs to change the current density of electroplating in the whole electroplating process, does not increase operation, need not more exchange device and plating bath, saved cost.
Though 3 electroplate the current density 0.1～1A/dm of transition layer of lead-tin alloy
2Between, but the thickness of transition layer of lead-tin alloy of the present invention is between 0.2～4um, and electroplating time can meet the demands at 1 to 5 minute, therefore, did not reduce productive rate.So the present invention has avoided forming bubble in the lead and tin alloy protruding point scolder under the situation that does not reduce productive rate.
4, in salient point backflow processing procedure, terne metal transition layer of lead-tin alloy refluxes with the lead and tin alloy protruding point scolder becomes soldered ball, has avoided introducing in soldered ball other metal material.
Description of drawings
Fig. 1 is the method for forming bump of prior art;
Fig. 2 is the big lead and tin alloy protruding point that the prior art method for making lead and tin alloy protruding point forms;
Fig. 3 is the SEM figure than big lead and tin alloy protruding point that the prior art method for making lead and tin alloy protruding point forms;
Fig. 4 is the scanning electron microscope diagram of normal lead and tin alloy protruding point;
Fig. 5 is the scanning electron microscope diagram of the lead and tin alloy protruding point of the generation hole that forms in the prior art method for making lead and tin alloy protruding point;
Formed the cross-sectional view of passivation layer and interconnecting metal layer wafer in Fig. 6 convex point production method of the present invention surface;
The surface forms the cross-sectional view of ubm layer wafer in Fig. 7 method for making lead and tin alloy protruding point of the present invention;
The cross-sectional view of wafer behind surface spraying photoresist and the exposure imaging formation photoresist pattern in Fig. 8 method for making lead and tin alloy protruding point of the present invention;
The photoresist opening part forms the transition layer of lead-tin alloy cross-sectional view of wafer afterwards in Fig. 9 method for making lead and tin alloy protruding point of the present invention;
The cross-sectional view of wafer after the photoresist opening part deposit lead tin alloy solder in Figure 10 method for making lead and tin alloy protruding point of the present invention;
Remove photoresist and the part ubm layer cross-sectional view of wafer afterwards in Figure 11 method for making lead and tin alloy protruding point of the present invention;
The cross-sectional view of wafer after the solder reflow in Figure 12 method for making lead and tin alloy protruding point of the present invention;
Figure 13 is the graph of a relation of electroplating time in the method for making lead and tin alloy protruding point of the present invention with the quantity that forms big salient point.
Embodiment
At method for making lead and tin alloy protruding point of the present invention, be described in detail below in conjunction with drawings and Examples.
Prior art selects for use materials such as titanium, titanium-tungsten alloy, copper, nickel as metal material under the salient point in the solder bump processing procedure usually, when using electroplating technology deposition lead and tin alloy protruding point, more often uses metallic nickel.
When adopting terne metal, adopt the electroplating solution of pyrovinic acid system usually, plumbum ion concentration (Pb in the plating bath as the salient point scolder and when adopting electric plating method deposition lead and tin alloy protruding point
2+) be 40 to 60g/L, tin ion (Sn
2+) concentration is 5 to 10g/L, pyrovinic acid is as the complexing agent in the solution, and concentration is 200 to 300g/L.During the electroplating lead tin alloy scolder, current density is 3A/dm
2To 10A/dm
2, reaction temperature is 25 ℃ to 35 ℃.
When the current density of pyrovinic acid system electroplating lead tin alloy is 3A/dm
2To 10A/dm
2The time, the hydrogen-evolution overpotential on the metallic nickel is lower than the sedimentation potential of terne metal, therefore can follow hydrogen evolution phenomenon in the incipient stage of electroplating lead tin alloy salient point, produces a large amount of bubbles, and concrete electrochemical reaction is:
2H
2O+2e→H
2+2OH-
Sn
2++2e→Sn
Pb
2++2e→Pb
After the electroplating lead tin alloy scolder, the bubble that part is not overflowed just is adsorbed in the wiping solder, in backflow processing procedure subsequently, along with the bubble in the increase wiping solder of temperature increases, thereby cause lead and tin alloy protruding point to become big or in lead and tin alloy protruding point, form hole, form as Fig. 2, Fig. 3, structure shown in Figure 5.Wherein Fig. 2 is the surface texture figure of lead and tin alloy protruding point behind the reflux technique, and lead and tin alloy protruding point 8 is for containing the bigger lead and tin alloy protruding point of bubble, and the diameter of lead and tin alloy protruding point 8 is 220um.Fig. 2 is that to weed model that company of scientific and technological engineering company (SEMITOOL) produces by U.S.'s suffering be that the checkout equipment of ECD212 obtains.Fig. 3 is that (Scanning Electron Microscope, SEM), Fig. 5 is the scanning electron microscope diagram that produces hole in the lead and tin alloy protruding point to the single scanning electron microscope diagram of lead and tin alloy protruding point greatly.Do not have the scanning electron microscope diagram of the normal lead and tin alloy protruding point of bubble and Fig. 4 is inside, the average diameter of lead and tin alloy protruding point is 121um.Bigger salient point and the inner salient point that contains hole can make the welding performance variation of salient point, cause wafer to lose efficacy at last assembling procedure.Fig. 3, Fig. 4, Fig. 5 are that to weed model that company of scientific and technological engineering company (SEMITOOL) produces by U.S.'s suffering be that the checkout equipment of ECD212 obtains.
For addressing the above problem, the invention provides a kind of method of electroplating salient point that forms, can avoid in scolder, producing bubble in the process of galvanoplastic deposit solder, its process is: deposit ubm layer on wafer; On ubm layer, form photoresist layer, also form the photoresist opening by exposure and development; On the ubm layer of photoresist aperture position, form the transition layer of lead-tin alloy; Electroplating lead tin alloy scolder on the transition layer of lead-tin alloy; Remove photoresist and ubm layer; The backflow wiping solder forms lead and tin alloy protruding point.
Make a detailed explanation to 12 pairs of concrete processing steps of the present invention of accompanying drawing below in conjunction with accompanying drawing 6.
As shown in Figure 6, finished passivation layer 11 and interconnecting metal layer 12 on the wafer 10, described interconnecting metal layer 12 generally is the metallic aluminium pad.With reference to figure 7, on wafer 10, form ubm layer 13 by sputter or evaporation technology, ubm layer 13 can be titanium, titanium-tungsten alloy, copper, nickel etc., and the present invention adopts the method for sputter to form the metal nickel dam as ubm layer 13 on interconnecting metal layer 12.The technology that sputter or evaporation form ubm layer 13 is prior art well known to those skilled in the art, does not do specific descriptions.
As shown in Figure 8, spraying one photoresist layer 14 on wafer 10 in forming photoresist layer 14 processes, should guarantee to make the thickness of the photoresist of coating to reach the height of electroplating lead tin alloy scolder arts demand.In general, photoresist 14 thickness are between 40 microns to 175 microns.Then, the photoresist pattern according to designing exposes, and develops, and forms the photoresist opening, and the position of described formation photoresist opening is the position that needs to form lead and tin alloy protruding point.At resist exposure with develop to form in the process of photoresist pattern, should guarantee to satisfy the soldered ball center distance 100 microns to 400 microns requirement.
As shown in Figure 9, photoresist opening part on ubm layer forms transition layer of lead-tin alloy 15, the technology that forms transition layer of lead-tin alloy 15 can be various technology well known to those skilled in the art as electroplate, plasma-deposited, mould printing etc.Highly preferred technology is to adopt galvanoplastic to form transition layer of lead-tin alloy 15.The ubm layer 13 that the thickness of the transition layer of lead-tin alloy 15 that forms can cover the photoresist opening part fully gets final product, and is generally 0.2um to 4um, is 0.5um to 2um preferably.
The terne metal material of transition layer of lead-tin alloy 15 can be 95wt%Pb, 5wt%Sn and 97wt%Pb, 3wt%Sn and congruent melting 37wt%Pb, 63wt%Sn alloy.In the present invention, when the terne metal material of transition layer of lead-tin alloy 15 is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn, adopt the mixed solution of the soluble-salt of metallic lead and metallic tin, wherein plumbum ion concentration (Pb
2+) be 40g/L to 60g/L, tin ion (Sn
2+) concentration is 5g/L to 10g/L, pyrovinic acid is as complexing agent, and concentration is 200g/L to 300g/L, produces bubble in electroplating process, and electroplating the current density range that transition layer of lead-tin alloy 15 adopts is 0.1A/dm
2To 1A/dm
2, be preferably 0.5A/dm
2To 1A/dm
2, temperature is between 25 to 35 ℃.
At 0.1A/dm
2To 1A/dm
2Current density under, make transition layer of lead-tin alloy 15 cover ubm layer 13 fully, electroplating time reaches 1 minute and gets final product.As shown in figure 13, be electroplating time and the quantitative relation figure that forms big salient point, as can be seen from Figure 13, the time of electroplating transition layer of lead-tin alloy 15 is 1 minute, again with the current density deposit lead tin alloy solder of routine, avoided forming the phenomenon of big salient point subsequently.For the needs that shorten electroplating time, raising productive rate, inventing the preferred time is 1 minute to 5 minutes, is preferably 1 minute to 2 minutes.
In specific embodiment of the present invention, when the terne metal material of transition layer of lead-tin alloy 15 is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn, adopt the mixed solution of the soluble-salt of metallic lead and metallic tin, wherein plumbum ion concentration (Pb
2+) be 50g/L, tin ion (Sn
2+) concentration is 7g/L, pyrovinic acid concentration is 280g/L, the current density range of employing is 0.15A/dm
2, temperature is 30 ℃, and electroplating time is 1 minute, and the thickness of the transition layer of lead-tin alloy 15 of Xing Chenging is 0.2um at last.
In another specific embodiment of the present invention, when the terne metal material of transition layer of lead-tin alloy 15 is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn, adopt the mixed solution of the soluble-salt of metallic lead and metallic tin, wherein plumbum ion concentration (Pb
2+) be 40g/L, tin ion (Sn
2+) concentration is 5g/L, pyrovinic acid concentration is 280g/L, the current density range of employing is 0.5A/dm
2, temperature is 30 ℃, and electroplating time is 2 minutes, and the thickness of the transition layer of lead-tin alloy 15 of Xing Chenging is 0.5um at last.
In another specific embodiment of the present invention, when the terne metal material of transition layer of lead-tin alloy 15 is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn, adopt the mixed solution of the soluble-salt of metallic lead and metallic tin, wherein plumbum ion concentration (Pb
2+) be 60g/L, tin ion (Sn
2+) concentration is 10g/L, pyrovinic acid concentration is 300g/L, the current density range of employing is 1A/dm
2, temperature is 30 ℃, and electroplating time is 3 minutes, and the thickness of the transition layer of lead-tin alloy 15 of Xing Chenging is 2um at last.
In another specific embodiment of the present invention, adopt the mixed solution of the soluble-salt of metallic lead and metallic tin, wherein plumbum ion concentration (Pb
2+) be 50g/L, tin ion (Sn
2+) concentration is 10g/L, pyrovinic acid concentration is 220g/L, the current density range of employing is 0.8A/dm
2, temperature is 35 ℃, and electroplating time is 5 minutes, and the thickness of the transition layer of lead-tin alloy 15 of Xing Chenging is 4um at last.
Transition layer of lead-tin alloy of the present invention also can adopt congruent melting 37wt%Pb, 63wt%Sn alloy, and the solution composition that is adopted is the mixed solution of the soluble-salt of metallic lead and metallic tin, wherein plumbum ion concentration (Pb
2+) be 15g/L to 25g/L, tin ion (Sn
2+) concentration is 36g/L to 44g/L, pyrovinic acid concentration is 200g/L to 300g/L, the current density of employing is 0.1A/dm
2To 1A/dm
2, be preferably 0.5A/dm
2To 1A/dm
2, temperature is between 25 ℃ to 35 ℃, electroplating time is 1 minute to 5 minutes.
Adopt above-mentioned process deposits transition layer of lead-tin alloy 15,, in electroplating process, can not produce hydrogen evolution phenomenon, thereby avoided in electroplating the solder bump processing procedure, producing bigger salient point because current density is lower.
Form after the transition layer of lead-tin alloy 15, as shown in figure 10, electroplating lead tin alloy scolder 16 on transition layer of lead-tin alloy 15, described terne metal can be 95wt%Pb, 5wt%Sn and 97wt%Pb, 3wt%Sn and congruent melting 37wt%Pb, 63wt%Sn alloy.As a kind of preferred technology, the solution composition of electroplating lead tin alloy scolder 16 is identical with the solution composition of electroplating deposition transition layer of lead-tin alloy 15, and therefore, the metal ingredient of the wiping solder of formation is identical with the metal ingredient of transition layer of lead-tin alloy 15.The current density of electroplating lead tin alloy scolder 16 is 3A/dm
2To 10A/dm
2
In a specific embodiment of the present invention, when the terne metal material of wiping solder 16 is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn, deposition forms after the thick transition layer of lead-tin alloy 15 of 1.0um, adopts identical electroplating solution, and current density is adjusted to 5A/dm
2, under same temperature, to electroplate 38 minutes, no bubble produces in the electroplating process.
In another embodiment of the present invention, wiping solder 16 is congruent melting 37wt%Pb, 63wt%Sn alloy, and deposition forms after the thick transition layer of lead-tin alloy 15 of 0.25um, adopts identical electroplating solution, and current density is adjusted to 8A/dm
2, under same temperature, to electroplate 30 minutes, no bubble produces in the electroplating process.
As Figure 11 and shown in Figure 12, on transition layer of lead-tin alloy 15 after the electroplating lead tin alloy scolder 16, remove the ubm layer 13 outside photoresist layer 14 and the wiping solder, carry out wiping solder 200 ℃ to 250 ℃ temperature range then and reflux, form solder bump 17 shown in Figure 12.
Can know by description of the invention, select the transition layer of lead-tin alloy of under lower current density, electroplating for use, do not need coating is carried out clean after electroplating end, do not need to adjust solution composition yet, directly adjust electroplating technology, promptly add high current density, can directly carry out the processing procedure of next step electroplating lead tin alloy scolder, simple to operation, and avoided fully generating bubble in the electroplating process bumps scolder, thereby avoid in the backflow processing procedure, forming bigger salient point or in salient point, forming hole, improved the welding of salient point and given birth to energy.
In salient point backflow processing procedure, transition layer of lead-tin alloy 15 refluxes with wiping solder 16 becomes soldered ball, has avoided introducing in soldered ball other metal material.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (12)
1. a method for making lead and tin alloy protruding point comprises the following steps:
On wafer, deposit ubm layer;
On ubm layer, form photoresist layer, also form the photoresist opening by exposure and development;
On the ubm layer of photoresist aperture position, form the transition layer of lead-tin alloy;
Electroplating lead tin alloy scolder on the transition layer of lead-tin alloy;
Remove photoresist and ubm layer;
The backflow wiping solder forms lead and tin alloy protruding point.
2. method for making lead and tin alloy protruding point according to claim 1 is characterized in that, the technology of described formation transition layer of lead-tin alloy is electroplating technology.
3. method for making lead and tin alloy protruding point according to claim 2 is characterized in that, the current density that described plating forms the transition layer of lead-tin alloy is 0.1A/dm
2To 1A/dm
2
4. method for making lead and tin alloy protruding point according to claim 3 is characterized in that, the current density that described plating forms the transition layer of lead-tin alloy is 0.5A/dm
2To 1A/dm
2
5. method for making lead and tin alloy protruding point according to claim 2 is characterized in that, electroplating the time that forms the transition layer of lead-tin alloy on ubm layer is 1 minute to 5 minutes.
6. method for making lead and tin alloy protruding point according to claim 5 is characterized in that, electroplating the time that forms the transition layer of lead-tin alloy on ubm layer is 1 minute to 2 minutes.
7. method for making lead and tin alloy protruding point according to claim 2 is characterized in that, the electroplating solution that the deposit lead tin alloy solder adopts is identical with the electroplating solution of electroplating formation transition layer of lead-tin alloy.
8. according to claim 1 or 2 described method for making lead and tin alloy protruding point, it is characterized in that described transition terne metal layer thickness is 0.2um to 4um.
9. method for making lead and tin alloy protruding point according to claim 7 is characterized in that, described transition terne metal layer thickness is 0.5um to 2um.
10. according to claim 1 or 2 described method for making lead and tin alloy protruding point, it is characterized in that described transition layer of lead-tin alloy is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn or congruent melting 37wt%Pb, 63wt%Sn alloy.
11. according to claim 1 or 2 described method for making lead and tin alloy protruding point, it is characterized in that, described on the transition layer of lead-tin alloy current density of deposit lead tin alloy solder be 3A/dm
2To 10A/dm
2
12., it is characterized in that described wiping solder is 95wt%Pb, 5wt%Sn or 97wt%Pb, 3wt%Sn or congruent melting 37wt%Pb, 63wt%Sn alloy according to claim 1 or 2 described method for making lead and tin alloy protruding point.
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| CNB2006100299146A CN100459082C (en) | 2006-08-10 | 2006-08-10 | Method for making lead and tin alloy protruding point |
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| CNB2006100299146A CN100459082C (en) | 2006-08-10 | 2006-08-10 | Method for making lead and tin alloy protruding point |
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| CN100459082C CN100459082C (en) | 2009-02-04 |
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| JP2004119801A (en) * | 2002-09-27 | 2004-04-15 | Alps Electric Co Ltd | Method for forming solder bump |
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