CN101908516B - Tin-silver convex block structure of flip chip and manufacturing method thereof - Google Patents
Tin-silver convex block structure of flip chip and manufacturing method thereof Download PDFInfo
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- CN101908516B CN101908516B CN2009100525390A CN200910052539A CN101908516B CN 101908516 B CN101908516 B CN 101908516B CN 2009100525390 A CN2009100525390 A CN 2009100525390A CN 200910052539 A CN200910052539 A CN 200910052539A CN 101908516 B CN101908516 B CN 101908516B
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Abstract
The invention provides a tin-silver convex block structure of a flip chip and a manufacturing method thereof. Tin-silver convex blocks are plated by adopting different current densities by stages; different metal mass ratios of the tin-silver convex blocks plated in different stages are controlled; the silver content of the bottom end in the tin-silver convex block structure is higher and the tin content is lower; the silver content at the lower part in the tin-silver convex block structure is lower for ensuring that the tin-silver convex block does not generate tin whisker or silver needle, thereby effectively avoiding short circuit between the convex blocks of the chip and also preventing the tin from diffusing into a metal layer UBM under convex points to form a tin-copper complex; and the reliability of a device is enhanced on the whole.
Description
Technical field
The present invention relates to the Flip-Chip Using technical field, relate in particular to a kind of structure and manufacture method thereof of flip-chip tin-silver convex block.
Background technology
Flip chip technology (fct) FCT (flip chip technology) is the developing direction of current semiconductor packaging.One-level encapsulation technology in the past all is that the active area with chip faces up, bonding (lead-in wire bonding and tape automated bonding TAB) behind the substrate sticking, and flip chip technology (fct) then is that the chip active area is carried out bonding in the face of substrate.The characteristics of flip chip technology (fct) are to prepare pad on chip and substrate respectively, face-to-face then bonding.Flip chip technology (fct) can utilize on the chip all areas to obtain the I/O end, and the silicon chip utilization ratio is greatly improved, and it can provide the highest packaging density, the highest I/O number and minimum packaging appearance.Utilize flip chip technology (fct), lead-in wire can be done the most shortly, and the reactance minimum can obtain the highest operating frequency and minimum noise.
Realize flip chip technology (fct), the formation of salient point is the key of its technical process.The effect of salient point is the mechanically interconnected and electrical interconnection of serving as between IC and the circuit board, also plays the effect of heat interconnection sometimes.In typical flip chip devices, interconnection is made of projection lower metal layer (UBM) and salient point itself.The kind of stud bump making technology is a lot, transmits method, galvanoplastic etc. as evaporation deposition method, print process, stud bump method, solder.Galvanoplastic are because cost has been the conventional process of stud bump making than hanging down at present.For electroplating bump process, the UBM material will sputter on the surface of entire wafer, deposit photoresist then, and on the IC bonding point, form opening with the method for photoetching.Be electroplated onto welding material on the wafer then and be included in the opening of photoresist.Carry out etching with photoresist lift off, and to the UBM material of exposure, chip is flowed again, form final salient point thereafter.
In the process of electroplating, the electric current of plating and time control are extremely important and be difficult to grasp, and for the tin-silver convex block of electroplating, the reliability that the metal quality of projection internal tin silver is compared to its work is important influence especially.If the too high levels (greater than 3.5%) of silver just might form acupuncture needle in the projection, thereby also may cause the short circuit defective chip between the chip upper protruding block.If the too high levels (greater than 99.5%) of tin in the projection, just might form tin under the effect of operating current must, thereby cause the short circuit defective chip between the chip upper protruding block, the too high levels of tin in the while projection, tin also is diffused into easily and forms tin copper metal complex in the structure of UBM, has a strong impact on the reliability of device.
Summary of the invention
The structure and the manufacture method thereof that the purpose of this invention is to provide a kind of flip-chip tin-silver convex block, the metal quality ratio by control tin silver prevent tin must and acupuncture needle, prevent the short circuit between the projection of chip, improve the reliability of device.
In order to realize above-mentioned purpose, the invention provides a kind of tin-silver convex block structure of flip chip, comprising:
Pad is positioned on the segment chip;
Passivation layer covers the two ends of described chip and described pad;
The projection lower metal layer is overlying on the described pad;
Tin-silver convex block is formed on the described projection lower metal layer, comprises bottom part and upper part, and the silver content of described bottom part is greater than the silver content of described upper part.
Optionally, described pad is the aluminium press welding block.
Optionally, described projection lower metal layer comprises sputter projection lower metal layer and the plated bumps lower metal layer that is positioned at successively on the pad.
Optionally, described sputter projection lower metal layer comprises Ti metal level and the Cu metal level that is positioned at successively on the pad.
Optionally, described plated bumps lower metal layer comprises the Cu metal level that is positioned on the described sputter projection lower metal layer, and is positioned at the Ni metal level on the described Cu metal level.
Optionally, described Cu metal layer thickness is 4-5um.
Optionally, described Ni metal layer thickness is 3-4um.
Optionally, the mass percent of described tin-silver convex block bottom part silver content is 3.0%-4.0%.
Optionally, the quality percentage of the silver content of described tin-silver convex block upper part is 0.5%-3.0%.
Optionally, the thickness of described tin-silver convex block bottom part is 3-9um.
In order to realize above-mentioned purpose, the present invention also provides a kind of tin-silver convex block structure of flip chip manufacture method, comprises the steps:
Chip is provided, and described chip top is coated with pad and covers the passivation layer at the two ends of described chip and described pad, forms the projection lower metal layer on described passivation layer and pad;
Electroplate the tin-silver convex block of bottom part on the projection lower metal layer, powering at the tin-silver convex block of bottom part then plates the tin-silver convex block of end parts, and the silver content of described bottom part is greater than the silver content of described upper part;
The reflux tin-silver convex block of described bottom part and upper part forms tin-silver convex block structure.
Optionally, described pad is the aluminium press welding block.
Optionally, the step of described formation projection lower metal layer comprises: first sputter one deck Ti metal level on described passivation layer and pad, sputter one deck Cu metal level forms sputter projection lower metal layer again.
Optionally, on described projection lower metal layer, form the plating groove.
Optionally, in described plating groove, electroplate tin-silver convex block bottom part and upper part.
Optionally, form the plated bumps lower metal layer on the projection lower metal layer in described plating groove;
Optionally, the step of described formation plated bumps lower metal layer comprises: at first electroplate the Cu metal level on the sputter projection lower metal layer in described plating groove, it is inferior to electroplated Ni metal level on the described Cu metal level.
Optionally, described Cu metal layer thickness is 4-5um.
Optionally, described Ni metal layer thickness is 3-4um.
Optionally, in described plating groove, electroplate tin-silver convex block bottom part and upper part on the plated bumps lower metal layer.
Optionally, reduce current density during the tin-silver convex block of described plating bottom part, strengthen the silver content of described bottom part electrodeposited coating.
Optionally, increase current density during the tin-silver convex block of described plating upper part, reduce the silver content of described upper part electrodeposited coating.
Optionally, the mass percent of the silver content of described tin-silver convex block bottom part is 3.0%-4.0%.
Optionally, the mass percent of the silver content of described tin-silver convex block upper part is 0.5%-3.0%.
Current density when optionally, electroplating described tin-silver convex block bottom part is 2.0-3.0 ampere/square decimeter.
Current density when optionally, electroplating described tin-silver convex block upper part is 4.0-6.0 ampere/square decimeter.
Optionally, the time of electroplating described tin-silver convex block bottom part is 3 minutes.
Optionally, the thickness of described tin-silver convex block bottom part is 3-9um.
Optionally, the step of described formation plating groove comprises: apply thick photoresist on described projection lower metal layer, aim at, expose and develop on described thick photoresist according to the shape size of required tin-silver convex block.
Optionally, finish the plating back and remove remaining thick photoresist.
Optionally, finish and to be exposed to the outer projection lower metal layer that is not covered after the plating and to erode by described tin-silver convex block.
Tin-silver convex block structure of the present invention and manufacture method thereof are come electrotinning silver projection by the different current densities of employing stage by stage, effectively controlled the different metal mass ratio of the tin-silver convex block of different phase plating, guaranteed tin-silver convex block can not produce tin must and acupuncture needle, thereby can effectively prevent short circuit between the projection of chip.Simultaneously, because the tin content of the tin silver layer that combines with projection lower metal layer UBM in the tin-silver convex block that adopts the inventive method to electroplate is lower, and silver content is higher, can prevent that tin is diffused into forms the tin copper complex in the structure of projection lower metal layer UBM, simultaneously because the content height of silver, the hardness height also can be realized good combination the with projection lower metal layer UBM.Various aspects to sum up, the electro-plating method of tin-silver convex block of the present invention has improved the reliability of device generally.
Description of drawings
Fig. 1 is a tin-silver convex block structure of flip chip schematic diagram of the present invention;
Fig. 2 A to Fig. 2 G is the manufacture method embodiment schematic diagram of tin-silver convex block structure of flip chip shown in Figure 1.
Embodiment
Below in conjunction with the drawings and specific embodiments tin-silver convex block structure of flip chip and the manufacture method thereof that the present invention proposes is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
The structure of flip-chip tin-silver convex block of the present invention below at first is described.
Please referring to Fig. 1, Fig. 1 is a tin-silver convex block structure of flip chip schematic diagram of the present invention.As shown in Figure 1, pad 2 is positioned on the segment chip, and pad 2 can be the aluminium press welding block.Passivation layer 3 covers the two ends of chip and pad 2, and passivation layer 3 can adopt common process.
Projection lower metal layer UBM is overlying on the pad, and for guaranteeing the satisfactory electrical conductivity of projection cube structure, projection lower metal layer UBM also can cover the contact jaw of passivation layer and pad usually in the practice.As a kind of embodiment of tin-silver convex block structure of the present invention, projection lower metal layer UBM comprises sputter projection lower metal layer 4 and the plated bumps lower metal layer that is positioned at successively on the pad.
As a kind of embodiment of tin-silver convex block structure of the present invention, sputter projection lower metal layer 4 comprises Ti metal level and the Cu metal level that is positioned at successively on the pad.
The plated bumps lower metal layer is formed on the sputter projection lower metal layer 4, between tin-silver convex block 12 and sputter projection lower metal layer 4.As a kind of embodiment of tin-silver convex block structure of the present invention, the plated bumps lower metal layer comprises the Cu metal level 5 that is positioned on the sputter projection lower metal layer 4, and is positioned at the Ni metal level 6 on the described Cu metal level 5.Described Cu metal layer thickness is 4-5um, and described Ni metal layer thickness is 3-4um.The Cu metal level of electroplating 5 can be realized good combination of the Ti/Cu sputter projection lower metal layer 4 that forms with sputter, and the Ni metal level of electroplating 6 can prevent tin Sn generation complex reaction in Cu and the tin-silver convex block 12 as the barrier layer.
Tin-silver convex block 12 is formed on the described projection lower metal layer, comprises bottom part 7 and upper part 8.The tin-silver convex block 12 that adopts electroplating technology to form, the silver content of the tin-silver convex block bottom part of electroplating 7 is higher, its mass percent needs more than or equal to 3.0% smaller or equal to 4.0%, and the mass percent of the silver content of upper part 8 then must be reduced to 0.5%-3.0%.As a kind of embodiment of tin-silver convex block structure of the present invention, the thickness of tin-silver convex block bottom part 7 is about 3-9um.
Because the silver content of bottom part 7 is higher in the tin-silver convex block 12 of the present invention, the hardness height, can with good combination of projection lower metal layer UBM, and the content of the tin of bottom part 7 is lower simultaneously, avoided under the effect of operating current, forming the tin palpus, also avoided tin to be diffused into and formed the tin copper complex in the projection lower metal layer UBM structure.Simultaneously, the silver content of upper part 8 reduces and then can prevent to produce acupuncture needle in the tin-silver convex block 12, avoids being short-circuited between each projection cube structure of chip.Thereby tin-silver convex block structure of flip chip of the present invention has improved the reliability of device on the whole.
Below in conjunction with Fig. 2 A to Fig. 2 G tin-silver convex block structure of flip chip manufacture method of the present invention is described.Fig. 2 A to Fig. 2 G is the embodiment schematic diagram of tin-silver convex block structure of flip chip manufacture method shown in Figure 1.
At first, shown in Fig. 2 A, provide chip 1, described chip 1 top is coated with pad 2 and covers the passivation layer 3 at the two ends of described chip and described pad, forms projection lower metal layer UBM on described passivation layer 3 and pad 2.
As an embodiment of tin-silver convex block manufacture method of the present invention, pad 2 can be the aluminium press welding block, and passivation layer 3 can adopt common process.The step of described formation projection lower metal layer comprises: first sputter one deck Ti metal level on described passivation layer 3 and pad 2, sputter one deck Cu metal level forms sputter projection lower metal layer 4 again.As another embodiment of tin-silver convex block manufacture method of the present invention, projection lower metal layer UBM also is included in the plated bumps lower metal layer of step formation thereafter except that comprising sputter projection lower metal layer 4.
Secondly, shown in Fig. 2 B, on described sputter projection lower metal layer 4, apply thick photoresist 9, on described thick photoresist, aim at, expose and develop, obtain the plating groove 10 of tin-silver convex block according to the shape size of required tin-silver convex block.
Once more, shown in Fig. 2 C, in electroplating groove 10, tin-silver convex block forms above-mentioned plated bumps lower metal layer.An embodiment as tin-silver convex block manufacture method of the present invention, when forming the plated bumps lower metal layer, at first that 4-5um is thick Cu is plated on tin-silver convex block and electroplates on the sputter projection lower metal layer 4 in the groove 10, form Cu metal level 5, electroplate on the Cu metal level 5 in Fig. 2 tin-silver convex block that D is shown in plating groove 10 for another example and form the thick Ni metal level 6 of 3-4um as the barrier layer.The Cu metal level of electroplating 5 can be realized good combination the with sputter projection lower metal layer 4, and the Ni metal level of electroplating 6 can prevent that as the barrier layer Sn in Cu metal level 5 and the tin-silver convex block from complex reaction taking place.
Once more, shown in Fig. 2 E, electroplate tin-silver convex block on the plated bumps lower metal layer in tin-silver convex block is electroplated groove 10.At first, the bottom part 7 of electrotinning silver projection on the Ni of plated bumps lower metal layer metal level 6, when electroplating bottom part 7 by reducing the silver content that current density strengthens the bottom part electrodeposited coating, the mass percent that makes silver content is 3.0%-4.0%, higher like this silver content makes that the hardness of bottom part 7 is higher, can combine with the plated bumps lower metal layer is good, the corresponding reduction of the content of the tin of bottom part 7 meanwhile, avoided under the effect of operating current, forming the tin palpus, also avoided tin to be diffused into and formed the tin copper complex in the plated bumps lower metal layer structure.An embodiment as tin-silver convex block manufacture method of the present invention, current density can be controlled between 2.0-3.0ASD (ASD be an ampere/square decimeter) plating when electroplating the bottom part 7 of tin-silver convex block about 3 minutes, the tin-silver convex block bottom part 7 of the thick about 3-9um of formation.Next shown in Fig. 2 F, on the bottom part 7 of tin-silver convex block, electroplate the upper part 8 of tin-silver convex block, increase current density during plating, make the mass percent of the silver content of upper part 8 be reduced to 0.5%-3.0%, finally form the mushroom tin-silver convex block original shape 11 shown in Fig. 2 F.As an embodiment of tin-silver convex block manufacture method of the present invention, the current density when electroplating upper part 8 can be controlled in 4.0-6.0ASD (ASD is an ampere/square decimeter).
Once more, shown in Fig. 2 F and Fig. 2 G, remove remaining thick photoresist 9 and will be exposed to outer not eroded by the sputter projection lower metal layer 4 of tin-silver convex block original shape 11 coverings of plating formation.
At last, reflux to electroplating the mushroom tin-silver convex block original shape 11 that forms, the final bump height that forms as shown in Figure 1 is even, and shape is tin-silver convex block structure preferably.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these revise and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these change and modification.
Claims (29)
1. tin-silver convex block structure of flip chip comprises:
Pad is positioned on the segment chip;
Passivation layer covers the two ends of described chip and described pad;
The projection lower metal layer is overlying on the described pad;
Tin-silver convex block is formed on the described projection lower metal layer, comprises bottom part and upper part, and the silver content of described bottom part is greater than the silver content of described upper part.
2. tin-silver convex block structure of flip chip as claimed in claim 1 is characterized in that, described pad is the aluminium press welding block.
3. tin-silver convex block structure of flip chip as claimed in claim 1 is characterized in that, described projection lower metal layer comprises sputter projection lower metal layer and the plated bumps lower metal layer that is positioned at successively on the pad.
4. tin-silver convex block structure of flip chip as claimed in claim 3 is characterized in that, described sputter projection lower metal layer comprises Ti metal level and the Cu metal level that is positioned at successively on the pad.
5. tin-silver convex block structure of flip chip as claimed in claim 3 is characterized in that, described plated bumps lower metal layer comprises the Cu metal level that is positioned on the described sputter projection lower metal layer, and is positioned at the Ni metal level on the described Cu metal level.
6. tin-silver convex block structure of flip chip as claimed in claim 5 is characterized in that, described Cu metal layer thickness is 4-5um.
7. tin-silver convex block structure of flip chip as claimed in claim 5 is characterized in that, described Ni metal layer thickness is 3-4um.
8. tin-silver convex block structure of flip chip as claimed in claim 1 is characterized in that, the mass percent of described tin-silver convex block bottom part silver content is 3.0%-4.0%.
9. tin-silver convex block structure of flip chip as claimed in claim 1 is characterized in that, the mass percent of the silver content of described tin-silver convex block upper part is 0.5%-3.0%.
10. tin-silver convex block structure of flip chip as claimed in claim 1 is characterized in that, the thickness of described tin-silver convex block bottom part is 3-9um.
11. a tin-silver convex block structure of flip chip manufacture method comprises the steps:
Chip is provided, and described chip top is coated with pad and covers the passivation layer at the two ends of described chip and described pad, forms the projection lower metal layer on described passivation layer and pad;
Electroplate the tin-silver convex block of bottom part on the projection lower metal layer, powering at the tin-silver convex block of bottom part then plates the tin-silver convex block of end parts, and the silver content of described bottom part is greater than the silver content of described upper part;
The reflux tin-silver convex block of described bottom part and upper part forms tin-silver convex block structure.
12. tin-silver convex block structure of flip chip manufacture method as claimed in claim 11 is characterized in that, described pad is the aluminium press welding block.
13. tin-silver convex block structure of flip chip manufacture method as claimed in claim 11, it is characterized in that, the step of described formation projection lower metal layer comprises: first sputter one deck Ti metal level on described passivation layer and pad, sputter one deck Cu metal level forms sputter projection lower metal layer again.
14. tin-silver convex block structure of flip chip manufacture method as claimed in claim 13 is characterized in that, forms to electroplate groove on described sputter projection lower metal layer.
15. tin-silver convex block structure of flip chip manufacture method as claimed in claim 14 is characterized in that, electroplates tin-silver convex block bottom part and upper part in described plating groove.
16. tin-silver convex block structure of flip chip manufacture method as claimed in claim 14 is characterized in that, forms the plated bumps lower metal layer in described plating groove.
17. tin-silver convex block structure of flip chip manufacture method as claimed in claim 16, it is characterized in that, the step of described formation plated bumps lower metal layer comprises: at first electroplate the Cu metal level on the sputter projection lower metal layer in described plating groove, it is inferior to electroplated Ni metal level on the described Cu metal level.
18. tin-silver convex block structure of flip chip manufacture method as claimed in claim 17 is characterized in that, described Cu metal layer thickness is 4-5um.
19. tin-silver convex block structure of flip chip manufacture method as claimed in claim 17 is characterized in that, described Ni metal layer thickness is 3-4um.
20. tin-silver convex block structure of flip chip manufacture method as claimed in claim 16 is characterized in that, in described plating groove, electroplates tin-silver convex block bottom part and upper part on the plated bumps lower metal layer.
21. tin-silver convex block structure of flip chip manufacture method as claimed in claim 11 is characterized in that, reduces current density during the tin-silver convex block of described plating bottom part, strengthens the silver content of described bottom part electrodeposited coating.
22. tin-silver convex block structure of flip chip manufacture method as claimed in claim 11 is characterized in that, increases current density during the tin-silver convex block of described plating upper part, reduces the silver content of described upper part electrodeposited coating.
23. tin-silver convex block structure of flip chip manufacture method as claimed in claim 11 is characterized in that, the mass percent of the silver content of described tin-silver convex block bottom part is 3.0%-4.0%.
24. tin-silver convex block structure of flip chip manufacture method as claimed in claim 11 is characterized in that, the mass percent of the silver content of described tin-silver convex block upper part is 0.5%-3.0%.
25. tin-silver convex block structure of flip chip manufacture method as claimed in claim 21 is characterized in that, the current density when electroplating described tin-silver convex block bottom part is 2.0-3.0 ampere/square decimeter.
26. tin-silver convex block structure of flip chip manufacture method as claimed in claim 22 is characterized in that, the current density when electroplating described tin-silver convex block upper part is 4.0-6.0 ampere/square decimeter.
27. tin-silver convex block structure of flip chip manufacture method as claimed in claim 25 is characterized in that, the time of electroplating described tin-silver convex block bottom part is 3 minutes.
28. tin-silver convex block structure of flip chip manufacture method as claimed in claim 11 is characterized in that, the thickness of described tin-silver convex block bottom part is 3-9um.
29. tin-silver convex block structure of flip chip manufacture method as claimed in claim 11 is characterized in that, finishes will be exposed to the outer projection lower metal layer that is not covered by described tin-silver convex block after the plating and erode.
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| CN102201389A (en) * | 2010-03-23 | 2011-09-28 | 卡西欧计算机株式会社 | Semiconductor device provided with tin diffusion inhibiting layer and manufacturing method of the same |
| CN105006437B (en) * | 2015-07-28 | 2018-06-26 | 江阴长电先进封装有限公司 | A kind of manufacturing method of high density projection cube structure |
| CN110444479B (en) * | 2019-07-22 | 2022-02-01 | 厦门通富微电子有限公司 | Manufacturing method of metal bump and chip |
| CN117542818B (en) * | 2024-01-10 | 2024-04-05 | 深圳市联合蓝海应用材料科技股份有限公司 | Gold-silver alloy bump and preparation method and application thereof |
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| CN1320960A (en) * | 2000-04-19 | 2001-11-07 | 卓联科技有限公司 | Interconnection method without lead bosses |
| US6998336B1 (en) * | 2004-11-17 | 2006-02-14 | Ngk Spark Plug Co., Ltd. | Wiring board and method of producing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1320960A (en) * | 2000-04-19 | 2001-11-07 | 卓联科技有限公司 | Interconnection method without lead bosses |
| US6998336B1 (en) * | 2004-11-17 | 2006-02-14 | Ngk Spark Plug Co., Ltd. | Wiring board and method of producing the same |
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| JP特开平8－215880A 1996.08.27 |
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