CN101099188B - Tft基板及其制造方法、以及具备a1配线的透明导电膜层叠基板及其制造方法、以及具备a1配线的透明导电膜层叠电路基板及其制造方法、以及氧化物透明导电膜材料 - Google Patents
Tft基板及其制造方法、以及具备a1配线的透明导电膜层叠基板及其制造方法、以及具备a1配线的透明导电膜层叠电路基板及其制造方法、以及氧化物透明导电膜材料 Download PDFInfo
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- CN101099188B CN101099188B CN2005800463271A CN200580046327A CN101099188B CN 101099188 B CN101099188 B CN 101099188B CN 2005800463271 A CN2005800463271 A CN 2005800463271A CN 200580046327 A CN200580046327 A CN 200580046327A CN 101099188 B CN101099188 B CN 101099188B
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Images
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- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP005499/2005 | 2005-01-12 | ||
| JP005569/2005 | 2005-01-12 | ||
| JP005637/2005 | 2005-01-12 | ||
| JP2005005499A JP2006195077A (ja) | 2005-01-12 | 2005-01-12 | Ａｌ配線を備えた透明導電膜積層基板及びその製造方法。 |
| JP2005005569A JP2006196616A (ja) | 2005-01-12 | 2005-01-12 | 酸化物透明導電膜材料及びＡｌ配線を備えた透明導電膜積層回路基板及びその製造方法。 |
| JP2005005637A JP4700352B2 (ja) | 2005-01-12 | 2005-01-12 | Ｔｆｔ基板及びその製造方法 |
| JP017748/2005 | 2005-01-26 | ||
| JP2005017748A JP2006210033A (ja) | 2005-01-26 | 2005-01-26 | Ａｌ配線を備えた透明導電膜積層回路基板及びその製造方法。 |
| PCT/JP2005/023344 WO2006075483A1 (ja) | 2005-01-12 | 2005-12-20 | ＴＦＴ基板及びその製造方法、及び、Ａｌ配線を備えた透明導電膜積層基板及びその製造方法、及び、Ａｌ配線を備えた透明導電膜積層回路基板及びその製造方法、及び、酸化物透明導電膜材料 |
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| CN2010101715893A Division CN101880859B (zh) | 2005-01-12 | 2005-12-20 | 溅射标靶 |
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|---|---|
| CN101099188A CN101099188A (zh) | 2008-01-02 |
| CN101099188B true CN101099188B (zh) | 2011-09-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800463271A Expired - Fee Related CN101099188B (zh) | 2005-01-12 | 2005-12-20 | Tft基板及其制造方法、以及具备a1配线的透明导电膜层叠基板及其制造方法、以及具备a1配线的透明导电膜层叠电路基板及其制造方法、以及氧化物透明导电膜材料 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2006195077A (ja) |
| CN (1) | CN101099188B (ja) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101625977B (zh) * | 2008-07-11 | 2011-08-31 | 台湾薄膜电晶体液晶显示器产业协会 | 薄膜晶体管的制造方法 |
| KR102047354B1 (ko) | 2010-02-26 | 2019-11-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| TW201341563A (zh) * | 2012-07-10 | 2013-10-16 | Solar Applied Mat Tech Corp | 濺鍍靶材及氧化金屬薄膜 |
| KR102123529B1 (ko) | 2013-03-28 | 2020-06-17 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP6419610B2 (ja) * | 2015-03-12 | 2018-11-07 | リンテック株式会社 | 透明導電膜積層用フィルム、その製造方法および透明導電性フィルム |
| JP6487123B2 (ja) * | 2017-01-31 | 2019-03-20 | 堺ディスプレイプロダクト株式会社 | 有機ｅｌ表示装置およびその製造方法 |
| CN109546006B (zh) * | 2018-12-17 | 2020-09-08 | 武汉华星光电半导体显示技术有限公司 | 柔性oled显示面板及其制作方法 |
| JP7412926B2 (ja) * | 2019-08-30 | 2024-01-15 | 芝浦メカトロニクス株式会社 | 成膜装置、成膜ワーク製造方法 |
| JP2021137993A (ja) * | 2020-03-03 | 2021-09-16 | デクセリアルズ株式会社 | 導電性積層体及びこれを用いた光学装置、導電性積層体の製造方法 |
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| US6280861B1 (en) * | 1996-05-29 | 2001-08-28 | Idemitsu Kosan Co., Ltd. | Organic EL device |
| CN1508615A (zh) * | 2002-12-19 | 2004-06-30 | 株式会社神户制钢所 | 电子器件及其制造方法、溅射靶 |
-
2005
- 2005-01-12 JP JP2005005499A patent/JP2006195077A/ja not_active Withdrawn
- 2005-12-20 CN CN2005800463271A patent/CN101099188B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6280861B1 (en) * | 1996-05-29 | 2001-08-28 | Idemitsu Kosan Co., Ltd. | Organic EL device |
| CN1508615A (zh) * | 2002-12-19 | 2004-06-30 | 株式会社神户制钢所 | 电子器件及其制造方法、溅射靶 |
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| Publication number | Publication date |
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| JP2006195077A (ja) | 2006-07-27 |
| CN101099188A (zh) | 2008-01-02 |
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