CN101071239B - 显示基板及其制造方法和具有该显示基板的显示装置 - Google Patents

显示基板及其制造方法和具有该显示基板的显示装置 Download PDF

Info

Publication number
CN101071239B
CN101071239B CN2006101688160A CN200610168816A CN101071239B CN 101071239 B CN101071239 B CN 101071239B CN 2006101688160 A CN2006101688160 A CN 2006101688160A CN 200610168816 A CN200610168816 A CN 200610168816A CN 101071239 B CN101071239 B CN 101071239B
Authority
CN
China
Prior art keywords
electrode
storage
layer
lower floor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2006101688160A
Other languages
English (en)
Chinese (zh)
Other versions
CN101071239A (zh
Inventor
上本勉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101071239A publication Critical patent/CN101071239A/zh
Application granted granted Critical
Publication of CN101071239B publication Critical patent/CN101071239B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/40—Arrangements for improving the aperture ratio
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Power Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
CN2006101688160A 2006-05-12 2006-12-14 显示基板及其制造方法和具有该显示基板的显示装置 Active CN101071239B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR20060042898 2006-05-12
KR2006-0042898 2006-05-12
KR1020060042898A KR101192626B1 (ko) 2006-05-12 2006-05-12 표시 기판과, 이의 제조 방법 및 이를 구비한 표시 장치

Publications (2)

Publication Number Publication Date
CN101071239A CN101071239A (zh) 2007-11-14
CN101071239B true CN101071239B (zh) 2011-03-30

Family

ID=38684750

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006101688160A Active CN101071239B (zh) 2006-05-12 2006-12-14 显示基板及其制造方法和具有该显示基板的显示装置

Country Status (4)

Country Link
US (1) US7940344B2 (enExample)
JP (1) JP5489393B2 (enExample)
KR (1) KR101192626B1 (enExample)
CN (1) CN101071239B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100958640B1 (ko) 2008-06-09 2010-05-20 삼성모바일디스플레이주식회사 커패시터와 박막 트랜지스터를 갖는 기판, 이를 구비한평판 디스플레이 장치 및 상기 커패시터와 박막트랜지스터를 갖는 기판의 제조방법
KR20100065876A (ko) * 2008-12-09 2010-06-17 삼성전자주식회사 액정 표시 장치 및 이의 제조 방법
WO2010106710A1 (ja) * 2009-03-18 2010-09-23 シャープ株式会社 アクティブマトリクス基板、及び表示装置
US8866982B2 (en) * 2009-08-20 2014-10-21 Innolux Corporation Display device
US8569754B2 (en) * 2010-11-05 2013-10-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9443984B2 (en) * 2010-12-28 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW201303461A (zh) * 2011-07-04 2013-01-16 Chunghwa Picture Tubes Ltd 顯示裝置
CN104867812A (zh) * 2015-03-27 2015-08-26 京东方科技集团股份有限公司 多晶硅薄膜和半导体器件的制备方法、显示基板及装置
KR102542186B1 (ko) * 2016-04-04 2023-06-13 삼성디스플레이 주식회사 표시 장치
KR102687941B1 (ko) * 2016-10-24 2024-07-24 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1702530A (zh) * 2004-05-27 2005-11-30 Lg.菲利浦Lcd株式会社 液晶显示器件及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0031615D0 (en) * 2000-12-27 2001-02-07 Koninkl Philips Electronics Nv Improved television services
FR2819321B1 (fr) * 2001-01-10 2005-01-21 Amadeus Procede de traitement et d'acces a des donnees dans un systeme de reservation par ordinateur, et systeme de mise en oeuvre
US20050160352A1 (en) * 2001-06-14 2005-07-21 Samsung Electronics Co., Ltd. Information storage medium containing preload information, apparatus for and method of reproducing therefor
KR100476781B1 (ko) * 2001-12-28 2005-03-16 삼성전자주식회사 캐싱기법을 이용한 ｍｐｅｇ-4 시스템 단말의 제어방법
US8635355B2 (en) * 2002-05-01 2014-01-21 Stmicroelectronics, Inc. Method for pre-caching content to enable true VOD systems from NVOD or stream limited VOD systems
KR100514733B1 (ko) * 2002-05-24 2005-09-14 삼성전자주식회사 인터렉티브 모드를 지원하는 정보저장매체, 그 재생방법및 재생장치
KR100463204B1 (ko) * 2003-02-12 2004-12-23 삼성전자주식회사 선택적인 데이터 캐시 구조를 갖는 데이터 프로세싱 장치및 이를 포함하는 컴퓨터 시스템
US7858450B2 (en) * 2004-01-06 2010-12-28 Samsung Electronics Co., Ltd. Optic mask and manufacturing method of thin film transistor array panel using the same
KR101026808B1 (ko) * 2004-04-30 2011-04-04 삼성전자주식회사 박막 트랜지스터 표시판의 제조 방법
KR101050899B1 (ko) * 2004-09-09 2011-07-20 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR101078360B1 (ko) * 2004-11-12 2011-10-31 엘지디스플레이 주식회사 폴리형 액정 표시 패널 및 그 제조 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1702530A (zh) * 2004-05-27 2005-11-30 Lg.菲利浦Lcd株式会社 液晶显示器件及其制造方法

Also Published As

Publication number Publication date
KR20070110159A (ko) 2007-11-16
US7940344B2 (en) 2011-05-10
JP5489393B2 (ja) 2014-05-14
JP2007304602A (ja) 2007-11-22
CN101071239A (zh) 2007-11-14
KR101192626B1 (ko) 2012-10-18
US20070263131A1 (en) 2007-11-15

Similar Documents

Publication Publication Date Title
US7336324B2 (en) Array substrate for liquid crystal display device and fabricating method thereof
US8012815B2 (en) Array substrate and method for fabricating thereof
US7420209B2 (en) Semiconductor device
CN102859702B (zh) 半导体元件及其制造方法、有源矩阵基板及显示装置
CN102822734B (zh) 电子基板的制造方法、液晶显示装置的制造方法、电子基板以及液晶显示装置
CN106505033B (zh) 阵列基板及其制备方法、显示装置
JP5489393B2 (ja) 表示基板と、その製造方法、及びこれを有する表示装置
CN102446925B (zh) 阵列基板、液晶显示器及阵列基板的制造方法
WO2010032386A1 (ja) 半導体装置
JP2009033140A (ja) Ａｌ合金膜を用いた低接触電気抵抗型電極およびその製造方法並びに表示装置
TWI527118B (zh) 薄膜的製造方法及使用該方法的顯示器金屬線薄膜電晶體陣列面板及該面板的製造方法
CN101800229A (zh) 显示装置
WO2014034617A1 (ja) 回路基板及び表示装置
CN102714221A (zh) 电路基板、显示装置和电路基板的制造方法
US11362216B2 (en) Active device substrate and manufacturing method thereof
US20070246845A1 (en) Method of Forming a Metal Line and Method of Manufacturing a Display Substrate by Using the Same
KR20050070325A (ko) 액정표시장치 및 그 제조방법
CN1862789B (zh) 包括多层薄膜的薄膜晶体管阵列面板以及制造该面板的方法
KR100897720B1 (ko) 액정표시장치의 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: SAMSUNG DISPLAY CO., LTD.

Free format text: FORMER OWNER: SAMSUNG ELECTRONICS CO., LTD.

Effective date: 20121129

C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20121129

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co., Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co., Ltd.