CN101061576A - 图案化并排列半导体纳米粒子 - Google Patents

图案化并排列半导体纳米粒子 Download PDF

Info

Publication number
CN101061576A
CN101061576A CNA2005800276453A CN200580027645A CN101061576A CN 101061576 A CN101061576 A CN 101061576A CN A2005800276453 A CNA2005800276453 A CN A2005800276453A CN 200580027645 A CN200580027645 A CN 200580027645A CN 101061576 A CN101061576 A CN 101061576A
Authority
CN
China
Prior art keywords
nanoparticles
aligned
semiconductor
semiconductor nanoparticles
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800276453A
Other languages
English (en)
Chinese (zh)
Inventor
托米·W·凯利
蒂莫西·D·邓巴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of CN101061576A publication Critical patent/CN101061576A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CNA2005800276453A 2004-06-21 2005-06-20 图案化并排列半导体纳米粒子 Pending CN101061576A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58141404P 2004-06-21 2004-06-21
US60/581,414 2004-06-21

Publications (1)

Publication Number Publication Date
CN101061576A true CN101061576A (zh) 2007-10-24

Family

ID=37499454

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800276453A Pending CN101061576A (zh) 2004-06-21 2005-06-20 图案化并排列半导体纳米粒子

Country Status (5)

Country Link
US (1) US20070178658A1 (enExample)
EP (1) EP1779417A2 (enExample)
JP (1) JP2008506547A (enExample)
CN (1) CN101061576A (enExample)
WO (1) WO2007001274A2 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102224596A (zh) * 2008-06-09 2011-10-19 三星电子株式会社 用于制造透明导体的改进cnt/顶涂层方法
CN105690780A (zh) * 2016-04-14 2016-06-22 吉林大学 一种用于粉末层叠制造的3d打印方法
CN105729806A (zh) * 2016-04-03 2016-07-06 吉林大学 一种用于粉末层叠制造的3d装置及3d打印方法
CN107199403A (zh) * 2017-05-18 2017-09-26 长春理工大学 一种利用TiO2粒子阵列辅助飞秒激光超衍射极限加工的方法
CN107240544A (zh) * 2017-05-04 2017-10-10 中国科学院宁波材料技术与工程研究所 一种图形化薄膜、薄膜晶体管及忆阻器的制备方法
CN109761191A (zh) * 2018-12-26 2019-05-17 天津大学 一种纳米线阵列制备方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8216636B2 (en) * 2006-07-28 2012-07-10 Nanyang Technological University Method of aligning nanotubes
KR100911884B1 (ko) * 2006-08-30 2009-08-11 한국전기연구원 비상용성 이성분계 고분자 나노입자 복합체에 전단응력을 인가한 나노입자 배향채널의 제조방법
US7604916B2 (en) * 2006-11-06 2009-10-20 3M Innovative Properties Company Donor films with pattern-directing layers
KR100905713B1 (ko) 2007-02-06 2009-07-01 삼성전자주식회사 나노결정을 이용한 정보저장매체 및 그 제조방법과,정보저장장치
US20090130427A1 (en) * 2007-10-22 2009-05-21 The Regents Of The University Of California Nanomaterial facilitated laser transfer
US9377409B2 (en) 2011-07-29 2016-06-28 Hewlett-Packard Development Company, L.P. Fabricating an apparatus for use in a sensing application
EP2871678A1 (en) * 2013-11-07 2015-05-13 University College Cork Method of fabrication of ordered nanorod arrays
US20170212037A1 (en) * 2016-01-05 2017-07-27 Arizona Board Of Regents On Behalf Of Arizona State University Colorimetric plasmonic nanosensor for dosimetry of therapeutic levels of ionizing radiation
US12040207B2 (en) * 2020-07-30 2024-07-16 Rohinni, Inc. Apparatus and method for orientation of semiconductor device die

Family Cites Families (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6652808B1 (en) * 1991-11-07 2003-11-25 Nanotronics, Inc. Methods for the electronic assembly and fabrication of devices
GB9206086D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
WO1995026925A1 (en) * 1994-03-30 1995-10-12 Massachusetts Institute Of Technology Production of fullerenic nanostructures in flames
US5510633A (en) * 1994-06-08 1996-04-23 Xerox Corporation Porous silicon light emitting diode arrays and method of fabrication
US5521035A (en) * 1994-07-11 1996-05-28 Minnesota Mining And Manufacturing Company Methods for preparing color filter elements using laser induced transfer of colorants with associated liquid crystal display device
US5747180A (en) * 1995-05-19 1998-05-05 University Of Notre Dame Du Lac Electrochemical synthesis of quasi-periodic quantum dot and nanostructure arrays
WO1997007429A1 (en) * 1995-08-18 1997-02-27 President And Fellows Of Harvard College Self-assembled monolayer directed patterning of surfaces
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
US5725989A (en) * 1996-04-15 1998-03-10 Chang; Jeffrey C. Laser addressable thermal transfer imaging element with an interlayer
US5693446A (en) * 1996-04-17 1997-12-02 Minnesota Mining And Manufacturing Company Polarizing mass transfer donor element and method of transferring a polarizing mass transfer layer
US5710097A (en) * 1996-06-27 1998-01-20 Minnesota Mining And Manufacturing Company Process and materials for imagewise placement of uniform spacers in flat panel displays
US5998085A (en) * 1996-07-23 1999-12-07 3M Innovative Properties Process for preparing high resolution emissive arrays and corresponding articles
JP2002504240A (ja) * 1997-06-12 2002-02-05 ゼットフォリエ ビー．ブイ． その表面に対し垂直な一方向の導電性をもつ基板を含む装置、及び該装置を製造する方法
US6382769B1 (en) * 1997-07-15 2002-05-07 Silverbrook Research Pty Ltd Method of tab alignment in an integrated circuit type device
US6152619A (en) * 1997-07-15 2000-11-28 Silverbrook Research Pty. Ltd. Portable camera with an ink jet printer and cutting blade
AUPO801097A0 (en) * 1997-07-15 1997-08-07 Silverbrook Research Pty Ltd A device (MEMS05)
US6375871B1 (en) * 1998-06-18 2002-04-23 3M Innovative Properties Company Methods of manufacturing microfluidic articles
US5948487A (en) * 1997-09-05 1999-09-07 3M Innovative Properties Company Anisotropic retardation layers for display devices
CA2306384A1 (en) * 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
US6129901A (en) * 1997-11-18 2000-10-10 Martin Moskovits Controlled synthesis and metal-filling of aligned carbon nanotubes
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
US6348700B1 (en) * 1998-10-27 2002-02-19 The Mitre Corporation Monomolecular rectifying wire and logic based thereupon
WO2000041894A1 (en) * 1999-01-15 2000-07-20 3M Innovative Properties Company Thermal transfer element with novel light-to-heat conversion layer
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
US6325909B1 (en) * 1999-09-24 2001-12-04 The Governing Council Of The University Of Toronto Method of growth of branched carbon nanotubes and devices produced from the branched nanotubes
US6521324B1 (en) * 1999-11-30 2003-02-18 3M Innovative Properties Company Thermal transfer of microstructured layers
US6401526B1 (en) * 1999-12-10 2002-06-11 The Board Of Trustees Of The Leland Stanford Junior University Carbon nanotubes and methods of fabrication thereof using a liquid phase catalyst precursor
EP1295180B1 (en) * 2000-06-15 2013-05-22 3M Innovative Properties Company Process for producing microfluidic articles
US6407330B1 (en) * 2000-07-21 2002-06-18 North Carolina State University Solar cells incorporating light harvesting arrays
US6420648B1 (en) * 2000-07-21 2002-07-16 North Carolina State University Light harvesting arrays
US6518085B1 (en) * 2000-08-09 2003-02-11 Taiwan Semiconductor Manufacturing Company Method for making spectrally efficient photodiode structures for CMOS color imagers
US6358664B1 (en) * 2000-09-15 2002-03-19 3M Innovative Properties Company Electronically active primer layers for thermal patterning of materials for electronic devices
US6400088B1 (en) * 2000-11-15 2002-06-04 Trw Inc. Infrared carbon nanotube detector
TW569195B (en) * 2001-01-24 2004-01-01 Matsushita Electric Industrial Co Ltd Micro-particle arranged body, its manufacturing method, and device using the same
ES2180405B1 (es) * 2001-01-31 2004-01-16 Univ Sevilla Dispositivo y procedimiento para producir chorros liquidos compuestos multicomponentes estacionarios y capsulas multicomponente y/o multicapa de tamaño micro y nanometrico.
KR101008294B1 (ko) * 2001-03-30 2011-01-13 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스
US6485884B2 (en) * 2001-04-27 2002-11-26 3M Innovative Properties Company Method for patterning oriented materials for organic electronic displays and devices
US6747282B2 (en) * 2001-06-13 2004-06-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US6656573B2 (en) * 2001-06-26 2003-12-02 Hewlett-Packard Development Company, L.P. Method to grow self-assembled epitaxial nanowires
US6982178B2 (en) * 2002-06-10 2006-01-03 E Ink Corporation Components and methods for use in electro-optic displays
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6669918B2 (en) * 2001-08-07 2003-12-30 The Mitre Corporation Method for bulk separation of single-walled tubular fullerenes based on chirality
US6906339B2 (en) * 2001-09-05 2005-06-14 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
US20030073104A1 (en) * 2001-10-02 2003-04-17 Belcher Angela M. Nanoscaling ordering of hybrid materials using genetically engineered mesoscale virus
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
US7220310B2 (en) * 2002-01-08 2007-05-22 Georgia Tech Research Corporation Nanoscale junction arrays and methods for making same
JP2005517537A (ja) * 2002-02-11 2005-06-16 レンセラー・ポリテクニック・インスティチュート 高度に組織化されたカーボン・ナノチューブ構造の指向性アセンブリ
US6934600B2 (en) * 2002-03-14 2005-08-23 Auburn University Nanotube fiber reinforced composite materials and method of producing fiber reinforced composites
US7378075B2 (en) * 2002-03-25 2008-05-27 Mitsubishi Gas Chemical Company, Inc. Aligned carbon nanotube films and a process for producing them
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US6831017B1 (en) * 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
US20030190278A1 (en) * 2002-04-08 2003-10-09 Yan Mei Wang Controlled deposition of nanotubes
US6879143B2 (en) * 2002-04-16 2005-04-12 Motorola, Inc. Method of selectively aligning and positioning nanometer-scale components using AC fields
WO2003091458A1 (en) * 2002-04-26 2003-11-06 The Penn State Research Foundation Integrated nanomechanical sensor array chips
US6979489B2 (en) * 2002-05-15 2005-12-27 Rutgers, The State University Of New Jersey Zinc oxide nanotip and fabricating method thereof
US6849558B2 (en) * 2002-05-22 2005-02-01 The Board Of Trustees Of The Leland Stanford Junior University Replication and transfer of microstructures and nanostructures
US6916584B2 (en) * 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
AU2003304297A1 (en) * 2002-08-23 2005-01-21 Sungho Jin Article comprising gated field emission structures with centralized nanowires and method for making the same
US7233101B2 (en) * 2002-12-31 2007-06-19 Samsung Electronics Co., Ltd. Substrate-supported array having steerable nanowires elements use in electron emitting devices
US6811938B2 (en) * 2002-08-29 2004-11-02 Eastman Kodak Company Using fiducial marks on a substrate for laser transfer of organic material from a donor to a substrate
US20040191567A1 (en) * 2002-09-03 2004-09-30 Caballero Gabriel Joseph Light emitting molecules and organic light emitting devices including light emitting molecules
WO2004027822A2 (en) * 2002-09-05 2004-04-01 Nanosys, Inc. Oriented nanostructures and methods of preparing
WO2004022637A2 (en) * 2002-09-05 2004-03-18 Nanosys, Inc. Nanocomposites
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US7211143B2 (en) * 2002-12-09 2007-05-01 The Regents Of The University Of California Sacrificial template method of fabricating a nanotube
US7265037B2 (en) * 2003-06-20 2007-09-04 The Regents Of The University Of California Nanowire array and nanowire solar cells and methods for forming the same
JP2005079560A (ja) * 2003-09-04 2005-03-24 Hitachi Ltd 薄膜トランジスタ，表示装置、およびその製造方法
US7056834B2 (en) * 2004-02-10 2006-06-06 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices using imprint lithography

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102224596A (zh) * 2008-06-09 2011-10-19 三星电子株式会社 用于制造透明导体的改进cnt/顶涂层方法
CN102224596B (zh) * 2008-06-09 2015-06-17 三星电子株式会社 用于制造透明导体的改进cnt/顶涂层方法
CN105729806A (zh) * 2016-04-03 2016-07-06 吉林大学 一种用于粉末层叠制造的3d装置及3d打印方法
CN105690780A (zh) * 2016-04-14 2016-06-22 吉林大学 一种用于粉末层叠制造的3d打印方法
CN105690780B (zh) * 2016-04-14 2017-10-24 吉林大学 一种用于粉末层叠制造的3d打印方法
CN107240544A (zh) * 2017-05-04 2017-10-10 中国科学院宁波材料技术与工程研究所 一种图形化薄膜、薄膜晶体管及忆阻器的制备方法
CN107240544B (zh) * 2017-05-04 2019-10-15 中国科学院宁波材料技术与工程研究所 一种图形化薄膜、薄膜晶体管及忆阻器的制备方法
CN107199403A (zh) * 2017-05-18 2017-09-26 长春理工大学 一种利用TiO2粒子阵列辅助飞秒激光超衍射极限加工的方法
CN107199403B (zh) * 2017-05-18 2019-12-31 长春理工大学 一种利用TiO2粒子阵列辅助飞秒激光超衍射极限加工的方法
CN109761191A (zh) * 2018-12-26 2019-05-17 天津大学 一种纳米线阵列制备方法

Also Published As

Publication number Publication date
WO2007001274A3 (en) 2007-03-15
JP2008506547A (ja) 2008-03-06
EP1779417A2 (en) 2007-05-02
US20070178658A1 (en) 2007-08-02
WO2007001274A2 (en) 2007-01-04

Similar Documents

Publication Publication Date Title
CN101061576A (zh) 图案化并排列半导体纳米粒子
US8197888B2 (en) Dispersion, alignment and deposition of nanotubes
Shingubara Fabrication of nanomaterials using porous alumina templates
Hullavarad et al. Cadmium sulphide (CdS) nanotechnology: synthesis and applications
Yang et al. Mesoporous silica with micrometer‐scale designs
Ko et al. ZnO nanowire network transistor fabrication on a polymer substrate by low-temperature, all-inorganic nanoparticle solution process
AU2004208967B2 (en) Templated cluster assembled wires
WO2003050854A2 (en) Chemical reactor templates: sacrificial layer fabrication and template use
CN102086025A (zh) 一维柔性纳米材料组装体的制备方法
Weaver et al. Synthesis and characterization of quantum dot–polymer composites
Cho et al. Recent advances in 1D nanostructure assembly and direct integration methods for device applications
EP1244938B1 (de) Verfahren zur herstellung von im nanometerbereich oberflächendekorierten substraten
Pan et al. Recent progress in nano-electronic devices based on EBL and IBL
US12415721B2 (en) High rate printing of microscale and nanoscale patterns using interfacial convective assembly
Huang et al. Using soft lithography to fabricate gold nanoparticle patterns for bottom-gate field effect transistors
WO2025038297A2 (en) Gel assembly technology for aligned nanotubes and methods thereof
Mehare et al. Microfluidic spatial growth of vertically aligned ZnO nanostructures by soft lithography for antireflective patterning
Piotrowski et al. A facile post-assembly approach for the fabrication of non-close-packed gold nanocrystal arrays from binary nanocrystal superlattices
KR101014596B1 (ko) 나노 입자를 포함한 나노 세선 형성 방법 및 이 나노 세선을 사용하는 비휘발성 플래시 메모리 소자의 제작 방법
KR20070032337A (ko) 반도전성 나노입자의 패턴화 및 정렬
DE202012102039U1 (de) Nanostruktur
Di Mauro et al. H-bonding driven assembly of colloidal Au nanoparticles on nanostructured poly (styrene-b-ethylene oxide) block copolymer templates
Mu et al. Synthesis of single crystal metal sulfide nanowires and nanowire arrays by chemical precipitation in templates
Deng et al. Heterogeneous Bonding with Nanostructured Silver Langmuir-Blodgett Film
Tsakalakos Manufacturing electrical contacts to nanostructures

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
AD01 Patent right deemed abandoned

Effective date of abandoning: 20071024

C20 Patent right or utility model deemed to be abandoned or is abandoned