CN101059380A - Flexible capacitance type touch sensor production method - Google Patents
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Abstract
The invention relates to a method for producing flexible capacitor touch sensor, characterized in composed of middle layer preparation of PDMS, preparation of flexible PI substrate, graph metal sensitive electrode and relative electric connection, preparation of a first high-elasticity dielectric layer PDMS and a second flexible dielectric layer PI, graph metal drive electrode and relative electric connection, graph a top flexible insulation protective layer PI, separation of the flexible capacitor touch sensor. The invention optimizes and combines techniques, to realize the compatibility of organic flexible material PDMS, PI and traditional MEMS technique. And the capacitor touch sensor has compact structure, high mechanical strength, and high flexibility, while the product can contact the surface with any curvature to sense the volumes of normal force and tangent force, and be applied for the production of flexile capacitor touch sensor array.
Description
Technical field
The present invention relates to a kind of method for making of flexible capacitance type touch sensor, belong to flexible micro-electromechanical system (MEMS) technical field.
Background technology
MEMS MEMS sensor technology has also obtained development rapidly because micro-processing technology is constantly progressive at present, but most of sensors are based on conventional micro-processing technology, make on rigid substrate such as glass, silicon, quartz.Yet in actual applications, along with growing to the flexible structure demand sensor that can be attached to any higher curvature body surface, the rigid substrate micro-processing technology is difficult to satisfy such as special applications demands such as robot sensitive skin, limbs repairing technique, foldable electronic and wearable electronic systems, and this need continually develop the measurement needs of physical quantitys such as temperature that various flexible MEMS technology satisfy the higher curvature body surface, pressure, hardness, thermal conductance.Compare with silica-based MEMS sensor technology development, the starting of flexible MEMS technology is evening relatively.As far back as 1985, BarthP.W.Barth, S.L.Bernard, J.B.Angell.IEEE Transducers Electron.Device, 1985, ED-32 (7): 1202 people such as grade have reported relevant one-dimensional flexible silicon diode temperature sensor array structure, and the tumor locus that the temperature sensor of this flexible structure can be implanted the patient carries out hyperthermia treatment.Utilize isotropic etch to form but the characteristics of this flexible device are its silicon island, the edge, silicon island destroys easily and causes circuit to break down.Beebe in 1994 and DentonD.J.Beebe, D.D.Denton., Sensors and Actuators, 1994, A (44): 57 utilize similar methods to propose to improve the soundness and the reliability idea of flexible polyimide skin, but do not produce relevant device, up to Fukang JiangF.K.Jiang in 2000, G.B.Lee, Y.C.Tai, et al, Sensors and Actuators, 2000, A (79): 194 people such as grade adopt anisotropic dry etch to form the silicon island of many similar " sandwich " structure, with the flexible polyimide film these independent silicon island are coated the flexible shear stress sensor array of formation three-dimensional then, and this sensor has successfully been realized the instant detection of the delta wing gas separation case of unmanned vehicle, owing to adopt anisotropic etch to form the silicon island, improved the structural strength of whole flexible device greatly, the invention of this advanced person's flexible shear force sensor technology has been opened up new prospect for the flexible MEMS technical development.
As everyone knows, sense of touch is that robot realizes and the direct acting indispensable media of external environment, the development of tactile sensing system is a requisite part of robot sensor technical field, by with the contacting of external environment, a complete tactile data comprises normal force, tangential force, the fusion of quantity of information such as hardness, temperature, slippage.And the touch force sensor system is because its widespread use enjoys researchist's concern always, and especially intelligent skin, limbs repairing technique etc. are used very extensive in robot touch sensor system and bio-mechanical sensing system.Report about touch force sensor is more, but most of structures only limit to the unidirectional force perception of normal force or tangential force, certain structures, as Kane and Cutkosky (Kane, B.J., Cutkosky, M.R., and Kovacs, G.T.A., Sensors andActuators 1996,511～516) A (54): the high resolving power touch force sensor of people's development such as, though this sensor can detect the distribution of tangential force and normal force simultaneously, because the flexible rigid structure of device right and wrong is not suitable for curved surface contact force measurement.Zhu and SpronckF.Zhu, J.W.Spronck.Sensors andActuators 1992, A (31): the flexible touch force sensor of 115～120 researchs can only detect the distribution of positive force and one dimension tangential force simultaneously, yet often need to survey the tangential force distribution situation of both direction in the robot sensor system, above-mentioned various situations all are not enough to comprehensive exact evaluation surface contact situation.Scholar R.F.Santos such as nearest Santos, P.F.Rocha, et al.EEE ISIE 2005, June 20-23,2005, Dubrovnik, Croatia, 1539～1544) reported a kind of flexible touch force sensor that can measure three-dimensional power simultaneously, this size sensor is bigger, and manufacturing process and MEMS process technology are incompatible, are difficult to realize producing in batches.
In a word, a desirable touch force sensor should be able to capture the distribution situation that is touched object tangential force and a plurality of direction power of normal force simultaneously, and the device architecture flexibility is good, structure is frivolous, durable, anti-overload ability is strong, and manufacturing process is simple, with low cost, and can with current micro-processing technology compatibility, can produce in batches, and can make things convenient for other sensors together integrated.Intelligence skin and human body skin differ greatly, and the flexible skin touch sensor technology that tactile data as much as possible is merged is the important directions of following flexible MEMS skin technical development.
Summary of the invention
The present invention has remedied many weak points of common capacitance type touch sensor method for making, and the method that produces pliable and tough, frivolous capacitance type touch sensor of a kind of energy low cost, high finished product rate is provided.Compare with silica-based touch sensor, the flexible capacitance type touch sensor that adopts the method for the invention to make can be attached to the size that any complex geometric shapes body surface is experienced normal force and tangential force simultaneously.
The invention provides a kind of method for making of flexible capacitance type touch sensor, it is characterized in that at first on rigidity processing carrier silicon chip, applying sylgard 184 PDMS (dimethyl silicone polymer) middle layer of 45～50 μ m, carry out the oxygen plasma activation processing after the cold curing and with its surface; And then the liquid PI of overlapping coating (polyimide) prepolymer on the PDMS middle layer, form the PI flexible substrate after the precuring, and then on the PI flexible substrate, make flexible each structural sheet of electric capacity tactile sensing, at last coupons is placed on the hot plate and heat, the PI flexible device is stripped down from the PDMS middle layer, and the key step of the method for making of flexible capacitance type touch sensor provided by the present invention is as follows:
(a) prepare common single rigid carrier of throwing silicon chip as flexible device processing;
Sylgard 184 PDMS prepolymers are mixed, stir evenly, vacuumize 25-50min with hardening agent with 10: 1 (mass ratio), be coated on again on the rigid carrier silicon chip, at room temperature solidify 40-50h, form 40～50 μ m PDMS films as the middle layer between rigidity silicon chip carrier and the flexible substrate PI, then PDMS is carried out surface activation process in the oxygen plasma system, the oxygen plasma treatment parameter is: power 75W, pressure 10mbar, time 30s;
(b) in order to obtain certain thickness PI flexible substrate, (6000～7000mPas) PI forms 30～35 μ m PI flexible substrate to adopt repeatedly overlapping coating viscosity higher.Initial spin speed is 3000rpm, and the retention time is 70s, then 80 ℃ of preliminary drying 4min on hot plate; Each overlapping later on spin speed is than the preceding 200rpm that once increases, to improve the homogeneity of film, and the preliminary drying temperature after per next time of the overlapping coating once increases by 5 ℃ than preceding, after the last spin coating, the said sample sheet placed on the hot plate rise to 170-180 ℃ gradually from 95 ℃, and insulation 15min, then the sample on the hot plate is cooled to room temperature, the PI flexible substrate behind the formation one-step solidification naturally from 170-180 ℃; Described repeatedly overlapping coated is advisable with four times, and is unnecessary too much, should not be formed with certain thickness PI flexible substrate very little.
And the preliminary drying time after each overlapping coating increases 1min, after the last spin coating, the said sample sheet is risen to 175 ℃ gradually from 80 ℃ on hot plate, insulation 20min, then sample is cooled to room temperature naturally from 1 75 ℃, and the PI flexible substrate carries out surface activation process in the oxygen plasma system, oxygen plasma surface activation process parameter is: power 150W, pressure 10mbar, the time is 3min;
(c) metal A l that low temperature depositing ductility is good in the above or Cr/Au film, the graphical sensitive electrode 10 that is parallel to directions X, the sensitive electrode 3 that is parallel to the Y direction of forming of normal temperature then, center sensitive electrode 4 and be electrically connected 2; Described normal temperature is 18-25 ℃;
(d) the PDMS prepolymer is mixed, stirs evenly with 15: 1 mass ratioes with hardening agent, and it is dissolved in the PDMS solution that forms 25% (mass ratio) in the normal hexane solvent, spin coating 2～4 μ mPDMS films obtain the first high resiliency dielectric layer 5; Then PDMS is carried out the oxygen plasma surface activation process, processing parameter is that power is: 75W, and pressure is 10mbar, the time is: 30s;
(e) (1200～1500mPas) PI thin layer, and on hot plate 95 ℃, 125 ℃ dries by the fire 4min, 4min, 6min respectively on 135 ℃ the hot plate and then to apply one deck 1～2 μ m low viscosity on above-mentioned PDMS dielectric layer; Then spin coating 5～6 μ m AZ4620 photoresists are as the shared mask layer of PI wet etching and PDMS reactive ion etching, preliminary drying photoresist on hot plate: 90 ℃, 3min, adopt the rotine exposure time exposure AZ4620 photoresist of twice again, need not the back baking directly with developer for positive photoresist corrosion PI film 20～25s to PDMS layer, then on 175 ℃ of hot plates, dry by the fire 4min, use the graphical PDMS dielectric layer of dry method method etching then, its etching parameters is: power 1500W, pressure 0.02mBar, gas and flow thereof: 100%SF
6, 250sccm, time: 15～20min;
(f) good Al or the Cr/Au of normal temperature deposition ductility, and low temperature graphically forms drive electrode 7 and is electrically connected 8;
(g) spin coating one deck low viscosity (PI insulating protective layer of 1200～1500mPas) thick 1～2 μ m, and, dry by the fire 4min, 4min, 6min on 135 ℃ the hot plate respectively again at 95 ℃, 125 ℃; Then the Shipley1813 photoresist of spin coating 1.1～1.6 μ m, directly with developer for positive photoresist development 20～25s, exposes all press welding blocks behind the rotine exposure time exposed photoresist of employing twice as the mask of PI wet etching;
(h) above-mentioned experiment slice is placed on 100 ℃～110 ℃ the hot plate, PI flexible touch sensation sensor spare is stripped down from the PDMS middle layer by sharp mouth tweezers or thin blade;
(i) flexible device is placed in 240 ℃ the baking oven and is incubated 5h, further fully to solidify PI structural sheet flexible substrate, the second flexible dielectric layer PI film, the flexible insulation protective seam slowly is cooled to room temperature then, and the manufacturing of whole like this flexible device has just been finished.
In sum, compare with the silica-based MEMS sensor of routine, whole manufacture method is simple relatively, and is with low cost, the yield rate height.The flexible capacitance type touch sensor structure that adopts the liquid PI film of spin coating to do the substrate made is frivolous, and the physical strength height is flexible good, can be used for measuring simultaneously the normal force and the tangential force on any nonplanar object surface; The PDMS middle layer that the method for the realization of flexible structure helps flexible device to separate by spin coating one deck on the carrier silicon chip, the certain thickness PI flexible substrate of overlapping coating on the PDMS middle layer strips down flexible device at last from the PDMS middle layer then.With direct employing cementing agent solid-state PI film applying is realized that on rigid carrier the method for flexible structure compares, this method can obviously reduce in the follow-up high-temperature technology process of device because the plastic yield that the cementing agent expanded by heating causes, thus the yield rate and the consistance of device that improved device; On the first high resiliency dielectric layer PDMS film, apply second flexible dielectric layer, can avoid metal directly to be deposited on the PDMS dielectric layer and crack because of thermal stress; In addition; the curing of PI divides two stages to carry out; PI flexible substrate, PI flexible dielectric layer and PI flexible insulation protective seam three's curing divides two stages to carry out; and subordinate phase is solidificated in, and the three carries out together after the device isolation; this method has not only been simplified technological process, and has reduced the influence of thermal cycle to a great extent.Optimizing and combining by technology in a word, reached the process compatible of inorganic material and organic material, method for making of the present invention is suitable for the making by numerous this flexible capacitance type touch sensor arrays equally, and be expected to combine with other more tactile datas such as temperature, humidity, hardness etc., can make system's perception external information more definitely reliably, this will be one of following important development field of MEMS.
Description of drawings
Fig. 1 (a) is the sectional view of flexible capacitance type touch sensor XZ direction, and figure (b) is the synoptic diagram of the suffered external force F of flexible sensor upper surface;
Flexible electric capacity touch sensor (a) electric pole plate of Fig. 2, (b) lower electrode plate;
The general flow chart that Fig. 3 makes for technology of the present invention
Fig. 3 (a) applies PDMS and hardening agent on rigidity processing carrier silicon chip 11, solidify to form PDMS middle layer 12 under the room temperature;
Coating, curing and the surface activation process thereof of Fig. 3 (b) PI flexible substrate 1;
Fig. 3 (c) low temperature depositing metal A l or Au metallic film, and low temperature graphically forms sensitive electrode and electrical connection thereof;
Coating, curing and the surface activation process thereof of the two of Fig. 3 (d) PDMS dielectric layer and PI dielectric layer;
The wet etching of Fig. 3 (e) PI dielectric layer and the dry etching figureization of PDMS dielectric layer are to expose the electrical connection of sensitive electrode;
Fig. 3 (f) low temperature depositing metal A l or Au metallic film, and low temperature graphically forms drive electrode and electrical connection thereof;
Fig. 3 (g) insulating protective layer PI coating, curing and wet etching are graphically to expose the electrical connections of drive electrode;
The flexible electric capacity touch sensor of Fig. 3 (h) PI separates with the PDMS middle layer;
Behind the regelate of Fig. 3 (i) PI flexible material, the flexible electric capacity touch sensor that finally obtains.
1-12 is expressed as follows among Fig. 1-Fig. 4:
The 1-PI flexible substrate
The electrical connection of 2-sensitive electrode
3-is parallel to the sensitive electrode of Y direction
4-center sensitive electrode
The 5-first high resiliency dielectric layer PDMS
The 6-second flexible dielectric layer PI
The 7-drive electrode
The electrical connection of 8-drive electrode
The 9-PI insulating protective layer
10-is parallel to the sensitive electrode of directions X
11-processing carrier silicon chip
Middle layer PDMS between 12-processing carrier silicon chip and the flexible substrate PI
Embodiment
Following mask body is introduced a kind of embodiment, the present invention is described in further details, but the present invention also is fit to the manufacturing of the array structure be made up of numerous this flexible capacitance type touch sensors unit, and this method for making provides the experience of usefulness equally to other flexible MEMS Study on Technology.
Referring to Fig. 1 (a) and (b) is respectively a kind of flexible capacitance type touch sensor XZ sectional view and the synoptic diagram when being subjected to external force of environment F, and Fig. 2 is this condenser type sense of touch sensing responsive electrode and drive electrode vertical view.Carry out the size design of flexible capacitance type touch sensor from the edge effect of flexible capacitive sensor: drive electrode 7 is of a size of 3500 μ m * 3500 μ m, the size of sensitivity center's electrode 4 is 1000 μ m * 1000 μ m, being parallel to Y orientation-sensitive electrode 3 is 700 μ m * 2000 μ m, be parallel to directions X sensitive electrode 10 and be of a size of 2000 μ m * 700 μ m, the making step of finishing this flexible capacitance type touch sensor is as follows:
A. prepare common single silicon chip of throwing, as the rigid carrier of flexible device processing;
B. as Fig. 3 (a): prepolymer and the hardening agent of PDMS are pressed 10: 1 proportionings, spin coating one deck 45～50 μ m PDMS middle layers 12 on ready carrier silicon chip 11, again cold curing 48 hours, then PDMS is carried out the oxygen plasma surface activation process, processing parameter is: power 75W, pressure is 10mbar, and the time is 40s;
C. as Fig. 3 (b): four overlapping spin coating PI flexible substrate 1, each overlapping coating back preliminary drying 5min on 80 ℃ of hot plates, in order to improve the homogeneity of film, the preceding rotating speed of the rotating ratio of every next spin coating increases 200rpm, each overlapping later on spin speed is than the preceding 200rpm that once increases, to improve the homogeneity of film, and the preliminary drying temperature after each overlapping coating once increases by 5 ℃ than preceding, after the 4th spin coating, the said sample sheet placed on the hot plate rise to 175 ℃ gradually from 95 ℃, and insulation 20min, then the sample on the hot plate is cooled to room temperature, the PI flexible substrate behind the formation one-step solidification naturally from 175 ℃; And PI carried out the oxygen plasma surface activation process, its processing parameter is: 150W, pressure: 10mbar, 3min;
D. as Fig. 3 (c): normal temperature thermal evaporation 2000 Al or 100 /2000 Cr/Au, and the normal temperature wet etching forms directions X sensitive electrode 10, Y orientation-sensitive electrode 3, center sensitive electrode 4 and electrical wiring 2 thereof simultaneously;
E. as Fig. 3 (d): Sylgard184 PDMS prepolymer and hardening agent are mixed, stir with 15: 1 (mass ratio), pour into again in the normal hexane solvent, be made into mass ratio and be 25% PDMS solution, spin coating forms the high resiliency dielectric layer of 2～3 μ m, again it is solidified 6h in 70 ℃ of baking ovens, and slowly cool to room temperature, in the oxygen plasma system, carry out the surface activation process 75W of PDMS then, 10mBar, 30s;
F. as Fig. 3 (e): spin coating skim viscosity is 1200-1500mPas low viscosity 1～2 μ m PI dielectric layer 6 on PDMS dielectric layer 5, cause crackle to produce with the influence of avoiding metal directly to be deposited on the PDMS dielectric layer because of thermal cycle, then the AZ4620 photoresist of spin coating 7～8 μ m is as the shared mask of PI wet etching and PDMS dry etching, dry by the fire 5min before 90 ℃ of the hot plates, use the Karl Suss MA6 photo-etching machine exposal 35s twice rotine exposure time again, need not back baking but direct corrosion PI film 20～25s to PDMS layer in developer for positive photoresist, then with the graphical first high resiliency dielectric layer 5 that forms of the reactive ion etching Alcatel of system etching PDMS, etching parameters: 1500W, 100%SF
6Flow is 250sccm, and pressure is 0.02mBar, and etching time is 15～20min;
G. as Fig. 3 (f): normal temperature thermal evaporation 4000 Al or 150 /4000 Cr/Au, wet etching forms drive electrode 7 and electrical wiring 8 thereof under the normal temperature;
H. as Fig. 3 (g): the PI insulating protective layer 9 that spin coating one deck low viscosity 1～2 μ m is thick, and on hot plate 95 ℃, 125 ℃, 135 ℃ are dried by the fire 4min, 4min, 6minn respectively; Then the Shipley1813 photoresist of spin coating 1.1～1.6 μ m is as the mask of PI wet etching, and before 90 ℃ of hot plates, dry by the fire 5min, use the KarlSuss MA6 photo-etching machine exposal 12s twice rotine exposure time again, need not back baking but directly with the developer for positive photoresist 20～25s that develops, the press welding block with the electrical connection 8 of the electrical connection 2 of sensitive electrode and drive electrode exposes simultaneously;
I. as Fig. 3 (h): experiment slice placed on 100 ℃～110 ℃ the hot plate, the PI flexible device is stripped down from the PDMS middle layer by thin blade or sharp mouth tweezers;
J. as Fig. 3 (i): be put in flexible device in 240 ℃ of baking ovens and be incubated 5h, make the PI film of flexible PI structural sheet 1,6,9 further fully solidify, be cooled to room temperature then naturally, the manufacturing of whole like this flexible device has just been finished.
Above-mentioned manufacturing flexible capacitance type touch sensor technology is simple, with low cost, yield rate is high, by optimizing and combining of technology, has realized the compatibility of organic flexible material and conventional MEMS technology.Last resulting sense of touch capacitive sensor structure is frivolous, and mechanical flexibility is good, can be attached to the random geometry object surfaces and can survey the size of normal force and tangential force simultaneously.
Claims (10)
1, a kind of method for making of flexible capacitance type touch sensor, it is characterized in that comprising the preparation in dimethyl silicone polymer middle layer, the preparation of flexible substrate polyimide, sensitive electrode and be electrically connected the deposition of metallic film and graphical, the first high resiliency dielectric layer dimethyl silicone polymer and the second flexible dielectric layer polyimide form, the deposition of the metallic film of drive electrode and electrical connection thereof and graphical, the superiors' flexible insulation protective seam polyimide graphical, flexible touch sensation sensor separates with the middle layer dimethyl silicone polymer; Concrete steps are:
(a) be the processing carrier of flexible device with common single throwing silicon chip, the dimethyl silicone polymer prepolymer is mixed, stirs evenly, vacuumizes with the mass ratio of hardening agent with 10: 1, then be spin-coated on the rigid carrier silicon chip, and at room temperature solidify, thereby form the dimethyl silicone polymer film as the middle layer between rigidity silicon chip carrier and the flexible substrate polyimide, then dimethyl silicone polymer is carried out surface activation process in the oxygen plasma system;
(b) the repeatedly overlapping coating viscosity polyimide that is 6000～7000mPas, initial spin speed is 3000rpm, retention time is 70s, 80 ℃ of preliminary drying 5min on hot plate again, overlapping spin speed each time is than the preceding 200rpm that once increases, to improve the homogeneity of film, and the preliminary drying temperature after the overlapping each time coating once increases by 5 ℃ than preceding, after the last spin coating, the said sample sheet placed on the hot plate rise to 170-180 ℃ gradually from 95 ℃, insulation 15min, and then cool to room temperature naturally, the polyimide flexible substrate behind the formation one-step solidification;
(c) normal temperature depositing Al or Cr/Au metallic film and low temperature graphically form sensitive electrode and electrical connection;
(d) the dimethyl silicone polymer prepolymer is mixed, stirs evenly with the mass ratio of hardening agent with 15: 1, and it being dissolved in the normal hexane solvent to form mass percent be 25% dimethyl silicone polymer solution, spin coating forms high resiliency dielectric layer dimethyl silicone polymer film; Then dimethyl silicone polymer is carried out the oxygen plasma surface activation process;
(e) be right after on the dimethyl silicone polymer dielectric layer that to apply one deck viscosity be the polyimide coating of 1200～1500mPas, and on hot plate 95 ℃, 125 ℃, 4min, 4min, 6min dried by the fire on 135 ℃ the hot plate respectively; Then the spin coating photoresist is as the shared mask layer of polyimide wet etching and dimethyl silicone polymer reactive ion etching, on hot plate 90 ℃, preliminary drying photoresist 3min, use the rotine exposure time exposed photoresist of twice again, need not the back baking and directly corrode polyimide film 20～25s to the dimethyl silicone polymer layer with developer for positive photoresist, and then on 165 ℃ of hot plates, dry by the fire 4min, use the graphical dimethyl silicone polymer dielectric layer of dry method method etching then;
(f) normal temperature depositing Al or Cr/Au metallic film and graphical formation drive electrode and electrical connection;
(g) spin coating one deck low viscosity is the polyimide insulative protective seam of 1200～1500mPas again, with the graphical polyimide of above-mentioned step (c) technology, and the press welding block of all electrical connections is exposed;
(h) above-mentioned experiment slice is placed on 100 ℃～110 ℃ the hot plate, the polyimide flexible device is stripped down from the dimethyl silicone polymer middle layer;
(i) flexible device is placed in 240 ℃ the baking oven and is incubated 5h, further the PI flexible material structure layer in the full solidification flexible device is cooled to room temperature then naturally, finishes the making of flexible capacitance type touch sensor.
2,, it is characterized in that the pumpdown time is 25-50min in the step (a) by the method for making of the described flexible capacitance type touch sensor of claim 1; And the thickness of middle layer dimethyl silicone polymer film is 40-50 μ m between rigidity silicon chip slide glass and flexible substrate.
3, by the method for making of the described flexible capacitance type touch sensor of claim 1, it is characterized in that step (b) repeatedly the number of times of overlapping coated be 4 times.
4, by the method for making of the described flexible capacitance type touch sensor of claim 1, it is characterized in that step (c) and (f) described normal temperature refer to 18-25 ℃.
5, by the method for making of the described flexible capacitance type touch sensor of claim 1, it is characterized in that the described high resiliency medium thickness of step (d) is 2-4 μ m.
6, by the method for making of the described flexible capacitance type touch sensor of claim 1, it is characterized in that spin coating photoresist model is AZ4620 in the step (e), thickness is 7-8 μ m.
7, by the method for making of the described flexible capacitance type touch sensor of claim 1, it is characterized in that the surface activation process power that step (a) and step (d) relate to is that 75W, pressure are 10mbar, the time is 30s.
8, by the method for making of the described flexible capacitance type touch sensor of claim 1, the parameter that it is characterized in that dry etching is power 1500w, pressure 0.02mbar, 100%SF
6Gas, flow are 250sccm, and etching time is 10-20min.
9,, it is characterized in that graphical formation of step (c) normal temperature is parallel to the sensitive electrode (10) of x direction, the sensitive electrode (3) that is parallel to the y direction, center sensitive electrode (4) and is electrically connected (2) by the method for making of the described flexible capacitance type touch sensor of claim 1.
10,, it is characterized in that the graphical formation drive electrode (7) of step (f) and be electrically connected (8) by the method for making of the described flexible capacitance type touch sensor of claim 1.
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2007
- 2007-02-16 CN CN200710037606A patent/CN101059380B/en not_active Expired - Fee Related
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