CN108225620B - Flexible touch sensor with multilayer structure and manufacturing method thereof - Google Patents
Flexible touch sensor with multilayer structure and manufacturing method thereof Download PDFInfo
- Publication number
- CN108225620B CN108225620B CN201711401408.XA CN201711401408A CN108225620B CN 108225620 B CN108225620 B CN 108225620B CN 201711401408 A CN201711401408 A CN 201711401408A CN 108225620 B CN108225620 B CN 108225620B
- Authority
- CN
- China
- Prior art keywords
- film
- pdms
- electrode layer
- layer
- upper electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 59
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 59
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims abstract description 35
- 229920002799 BoPET Polymers 0.000 claims abstract description 33
- 239000002131 composite material Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000007796 conventional method Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 238000005382 thermal cycling Methods 0.000 claims description 2
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims 9
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims 9
- 229920000139 polyethylene terephthalate Polymers 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 10
- 230000006872 improvement Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 53
- 239000000243 solution Substances 0.000 description 18
- 239000005020 polyethylene terephthalate Substances 0.000 description 11
- 230000035945 sensitivity Effects 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 6
- 229910004042 HAuCl4 Inorganic materials 0.000 description 6
- 239000008103 glucose Substances 0.000 description 6
- 239000011736 potassium bicarbonate Substances 0.000 description 6
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229920002379 silicone rubber Polymers 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000005086 pumping Methods 0.000 description 3
- -1 Polydimethylsiloxane Polymers 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229940127554 medical product Drugs 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000002444 silanisation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
Abstract
The invention relates to the technical field of flexible artificial electronic skin, in particular to a flexible touch sensor with a multilayer structure and a manufacturing method thereof. The invention develops a double-dielectric-layer structure; providing a simpler and more environment-friendly mode for preparing the AuNPs-PDMS composite film; the upper electrode layer and the lower electrode layer are made of PET materials with better adhesion with metal, the Ag electrode is made of MEMS on the PET film, and the novel flexible touch sensor is obtained through material and structure improvement.
Description
Technical Field
The invention relates to the technical field of flexible artificial electronic skin, in particular to a flexible touch sensor with a multilayer structure and a manufacturing method thereof.
Background
The flexible artificial electronic skin is a novel wearable flexible bionic touch sensor, can realize the function of simulating human touch perception, and can sense external stimuli such as different pressures, temperatures, humidity and the like more accurately by using a touch sensing unit made of malleable materials and structures, so that the flexible artificial electronic skin can be used as an important application part in the aspects of new-generation medical equipment, human artificial limbs, robot skin and the like; the traditional touch sensor has the difficulty of having high flexibility and good electronic semiconductor performance under the action of tensile stress; although the sensitivity, flexibility, extensibility and other properties of a single sensing unit are greatly improved through the continuous efforts of many scientific researchers, the sensitivity, flexibility, extensibility and other properties of the single sensing unit still have great difficulty when the single sensing unit is applied to a carrier with a large surface area; the manufacturing cost of the flexible electronic skin with high sensitivity is large; in recent years, the capacitive touch sensor has the characteristics of high sensitivity, larger dynamic range, high spatial resolution, good frequency response and the like, has wide application prospects in the fields of medical products, intelligent robots and wearable consumer electronics equipment, and therefore has great interest of experts at home and abroad, although the capacitive touch sensor can solve the decoupling problem facing multidimensional force by utilizing the characteristics of the structure of the capacitive touch sensor, parasitic capacitance is easy to generate, and a measuring circuit is complex; the pursuit of high flexibility, high accuracy and high sensitivity has therefore been one of the hot spots of research; the touch sensor with the multilayer micro-capacitance structure can obtain higher flexibility, precision and sensitivity, and has potential application value in the field of touch sensing.
The micro-capacitance structure in the multi-layer micro-capacitance structure touch sensor can be generally seen to be composed of an upper electrode layer, a lower electrode layer and a middle dielectric layer. The electrode layer is made of metal materials in the prior art, the electrode layer is easy to break under the action of external force for multiple times, if the electrode layer is applied to a large-area carrier, the metal electrode is too large, and the flexibility and the resolution are greatly reduced; the electrode layer of the novel capacitive touch sensor can be replaced by a non-metallic material, and Zhang Dong et al (Chinese patent application No.: 201310500417.X) provides a flexible thin-film touch sensor device using a carbon nanotube composite thin film as an electrode layer. The different choices of the medium layers determine the difference of indexes such as sensitivity, measuring range and the like of the sensor. The traditional dielectric layer adopts a solid or gas filling method, but gaps are easy to generate between electrode layers, and the sensitivity is low; in recent years, a novel material and structure are applied to an electrode layer, so that the performance of a touch sensor is greatly improved, and Huangying et al (Chinese patent application No. 201410206998.0) provide a touch sensor using PDMS as a medium layer; novel tactile sensors; fig. 1 shows a typical multilayer structure, which includes, from top to bottom, an upper electrode layer, a dielectric layer, a lower electrode layer, and a lower electrode layer. Compared with Polydimethylsiloxane (PDMS) material, polyethylene terephthalate (PET) has low sensitivity, and is more suitable as an upper electrode layer and a lower electrode layer in designing a tactile sensor array.
The invention provides a flexible touch sensor with a multilayer structure and a manufacturing method thereof, wherein a double-dielectric-layer structure is developed; providing a simpler and more environment-friendly mode for preparing the AuNPs-PDMS composite film; the upper electrode layer and the lower electrode layer are made of PET materials with better adhesion with metals, the Ag electrode is made of MEMS on the PET film, and the novel flexible touch sensor obtained through material and structure improvement has wide application prospect in the field of artificial electronic skin, so that the design and development of the high-performance novel touch sensor with simple process are of great significance.
Disclosure of Invention
The invention aims to provide a flexible touch sensor with a multilayer structure and a manufacturing method thereof, wherein (1) a PET film is selected as an upper electrode layer and a lower electrode layer, an MEMS manufacturing process is adopted, an Ag target material is used, and electrodes are plated on the PET film by a magnetron sputtering technology; (2) on the silanized glass substrate, a PDMS film was prepared. Or preferably, the PDMS film can be prepared on a PET film of a lower electrode layer of the prepared electrode; (3) the conventional method of soaking the PDMS film in the gold-plating solution is not adopted, but the gold-plating solution is directly and uniformly dripped on the PDMS film, Au nano particles with high dielectric constant are added on the PDMS film, and the AuNPs-PDMS composite film is formed to be used as a first dielectric layer of the capacitive sensor; (4) and spin-coating PI on the prepared AuNPs-PDMS to form a PI film which is used as a second dielectric layer for film uncovering operation. Or, preferably, if the double dielectric layer is prepared on a PET film, no film uncovering operation is required. (5) And assembling the double-dielectric-layer film obtained by film uncovering to a PET (lower electrode layer) film with an Ag electrode by using acrylate glue, and assembling another PET film (upper electrode layer) with an Ag electrode on the PI film. Or preferably, an upper electrode layer is assembled on the PI film.
The invention adopts the technical scheme for solving the key problems that: a flexible tactile sensor having a multi-layer structure and a method for manufacturing the same, as shown in fig. 2: is characterized in that: the device comprises a PET upper electrode layer, an upper electrode, a PI dielectric layer, an AuNPs-PDMS composite film dielectric layer, a lower electrode and a PET lower electrode layer from top to bottom; the composite film is used for manufacturing an AuNPs-PDMS composite film in a simpler and environment-friendly mode to be used as a first dielectric layer of the capacitive sensor; the PI film is used as a second dielectric layer of the sensor; selecting a PET material as an upper electrode layer and a lower electrode layer; the upper and lower electrodes made of silver are manufactured by a magnetron sputtering process.
The invention takes AuNPs-PDMS composite film as the dielectric layer of the capacitance sensor, and the main working mechanism is as follows: by utilizing the double advantages of the gold nanometer and PDMS, when an applied external force acts on the PET electrode layer on the upper layer, the flexible multilayer micro-capacitance structure sensor is compressed, and the change of relative displacement delta L occurs between the upper silver electrode and the lower silver electrode, so that the capacitance is changed; the upper electrode layer and the lower electrode layer which are made of PET not only provide good ductility, but also have good adhesive strength between the PET film and the metal electrode, so that the metal electrode is prevented from being directly deposited on the AuNPs-PDMS composite film dielectric layer, and cracks are prevented from being generated due to the influence of thermal cycling.
Preferably, the upper electrode layer and the lower electrode layer are PET layers, and the thickness is 25-100 um.
The upper electrode material and the lower electrode material are Cu, Ag or Au, and the thickness is 8-10 nm.
The first dielectric layer is made of AuNPs-PDMS with the thickness of 2-10 nm.
The second dielectric layer is made of PI with the thickness of 2-10 nm.
Compared with the traditional touch sensor, the flexible touch sensor has the following advantages in the aspect of improving the overall performance of the flexible touch sensor:
when the AuNPs-PDMS composite film is prepared, a conventional method is not adopted, the PDMS film is not soaked in a gold-plating solution, the gold-plating solution is directly and uniformly dripped on the PDMS film, and Au nano particles with high dielectric constant are added on the PDMS film to form the AuNPs-PDMS composite film. In addition, a double-dielectric-layer structure is developed, the AuNPs-PDMS composite film is used as a first dielectric layer, the dual advantages of PDMS and AuNPs are fully utilized, and the PI film is used as a second dielectric layer of the sensor; the upper electrode layer and the lower electrode layer adopt PET films with better adhesion with metal to carry out magnetron sputtering, and electrodes are formed on the PET films in advance, so that the metal electrodes are prevented from being directly deposited on the dielectric layer, and cracks are prevented from being generated due to the influence of thermal cycle; the preparation process is compatible with the traditional basic process, does not need to change other existing production equipment, and is suitable for large-scale production.
Drawings
FIG. 1 is a schematic view of an exemplary capacitive touch sensor.
Fig. 2 is a schematic diagram of a multi-layer flexible tactile sensor according to the present invention.
In the figure: 1-upper electrode layer, 2-upper electrode, 3-dielectric layer, 4-lower electrode, 5-lower electrode layer, 6-PET film, 7-Ag electrode, 8-PI film, 9-AuNPs-PDMS composite film, 10-Ag electrode, 11-PET film
The specific implementation mode is as follows:
the invention relates to a preparation method of a flexible touch sensor with a multilayer structure, which comprises the following steps:
1. preparing an Ag electrode;
2. preparing a PDMS film;
3. preparing an AuNPs-PDMS film;
4. preparing a PI film;
5. and assembling the capacitive sensor.
Example 1:
1. manufacturing an upper capacitor electrode and a lower capacitor electrode by a magnetron sputtering process; firstly, the method comprises the following steps: and at room temperature, turning on a power supply, turning on an inflation valve, opening the cavity, placing the PET film, closing the cavity, and turning off the inflation valve, wherein the used target material is a silver target. II, secondly: and opening the vacuum gauge, the mechanical pump and the electromagnetic valve for pumping for 30s, opening the molecular pump and closing the electromagnetic valve. The circulating water is opened, the V1 valve is opened to pump to below 20Pa, the Ar valve is opened to pump to below 4.0Pa, and the V1 valve is closed. Thirdly, the method comprises the following steps: opening the Ar steel cylinder and switching the molecular pump. The vacuum gauge was closed, the flow display was opened and the valve control was adjusted to 14 sccm. Fourthly, the method comprises the following steps: closing the G valve, and adjusting the pressure: 2.2Pa, open the target shutter. And turning on a radio frequency power supply, turning on the stepping electrode and positively transmitting. Fifthly: pre-sputtering for 2min, waiting for each parameter to be stable, adjusting a valve G, and enabling the pressure to be as follows: 0.5 Pa. Non-magnetic controlled sputtering technological parameters: vacuum pressure 3.5x10-3Pa; the working pressure is 0.5 Pa; the flow rate of Ar used is 14 sccm; the power is 100W; the sputtering time was 15 min.
2. Cleaning the glass substrate at room temperature, and performing silanization treatment on the glass substrate; putting the glass substrate into a glass culture dish, dropwise adding trimethylchlorosilane, and covering a culture dish cover; after 15min, adding a certain amount of deionized water to clean the glass substrate; the glass substrate was placed in a forced air drying oven to be subjected to a drying treatment.
3. Preparing a PDMS film; mixing the silicon rubber main agent and the silicon rubber curing agent in a mass ratio of 10:1 at room temperature, and uniformly mixing by using a magnetic stirrer; carrying out vacuum-pumping defoaming treatment on the mixed materials for 1-1.5 h; dropping vacuum defoamed PDMS thick dropping liquid on a silanized glass substrate, putting the glass substrate into a spin coater for spin coating, then placing the glass substrate on a baking table at 70-80 ℃, and curing the PDMS film for 2 h.
4. Preparing a first dielectric layer; first, 1g of HAuCl was weighed at room temperature4Crystals, 100mL of C was added2H6O, 0.01g/mL of HAuCl was obtained4Taking a proper amount of 0.01g/mL HAuCl4The solution is evenly dripped on a PDMS film, sealed and placed for 48h in the dark. Secondly, weighing KHCO31g of the powder is placed in 5mL of deionized water for dissolution to prepare 0.2g/mL KHCO3And (3) solution. 1g of glucose is weighed, and 50mL of deionized water is weighed to obtain a glucose solution with the concentration of 0.02 g/mL. Respectively measuring 0.01g/mL HAuCl410mL of the solution, 10mL of a 0.02g/mL glucose solution, and 0.2g/mL KHCO3The solution was 5mL and mixed. And directly dripping the mixed solution onto a PDMS film treated by 0.01g/mL HAuCl4 solution, sealing and reacting for 24h in a dark place, and finally forming the AuNPs-PDMS film.
5. Preparing a second dielectric layer; and (3) at room temperature, spin-coating PI viscous dropping liquid on the prepared AuNPs-PDMS film by using a spin coater, and curing for 6 hours at room temperature to form the PI film. The double-layer composite film is peeled off from the glass sheet by means of sharp-nose tweezers or a thin blade. And assembling the double-dielectric-layer film obtained by film uncovering to a PET (lower electrode layer) film with an Ag electrode by using acrylate glue, and assembling another PET film (upper electrode layer) with an Ag electrode on the PI film.
Example 2:
1. manufacturing an upper capacitor electrode and a lower capacitor electrode by a magnetron sputtering process; firstly, the method comprises the following steps: and at room temperature, turning on a power supply, turning on an inflation valve, opening the cavity, placing the PET film, closing the cavity and closing the inflation valve. II, secondly: opening the vacuum gauge, mechanical pump and electromagnetic valve for 30s, opening the molecular pump, and closing the electromagnetic valveAnd (4) a valve. The circulating water is opened, the V1 valve is opened to pump to below 20Pa, the Ar valve is opened to pump to below 4.0Pa, and the V1 valve is closed. Thirdly, the method comprises the following steps: opening the Ar steel cylinder and switching the molecular pump. The vacuum gauge was closed, the flow display was opened and the valve control was adjusted to 14 sccm. Fourthly, the method comprises the following steps: closing the G valve, and adjusting the pressure: 2.2Pa, open the target shutter. And turning on a radio frequency power supply, turning on the stepping electrode and positively transmitting. Fifthly: pre-sputtering for 2min, waiting for each parameter to be stable, adjusting a valve G, and enabling the pressure to be as follows: 0.5 Pa. Non-magnetic controlled sputtering technological parameters: vacuum pressure: 3.5x10-3Pa; working pressure: 0.5 Pa; ar flow rate: 14 sccm; power: 100W; sputtering time: and 15 min.
2. Preparing a PDMS film; mixing the silicon rubber main agent and the silicon rubber curing agent in a mass ratio of 10:1 at room temperature, and uniformly mixing by using a magnetic stirrer; carrying out vacuum-pumping defoaming treatment on the mixed materials for 1-1.5 h; dropping vacuum defoamed PDMS viscous dropping liquid on a PET film (lower electrode layer) with an Ag electrode, putting the PET film into a spin coater for spin coating, and curing the PDMS film for 2h on a drying table at 70-80 ℃.
3. Preparing a first dielectric layer; first, 1g of HAuCl was weighed at room temperature4Crystals, 100mL of C was added2H6O, 0.01g/mL of HAuCl was obtained4Taking a proper amount of 0.01g/mL HAuCl4The solution is evenly dripped on a PDMS film, sealed and placed for 48h in the dark. Secondly, weighing KHCO3Powder 1g was dissolved in 5mL of deionized water to prepare 0.2g/mL KHCO3 solution. 1g of glucose is weighed, and 50mL of deionized water is weighed to obtain a glucose solution with the concentration of 0.02 g/mL. Respectively measuring 0.01g/mL HAuCl410mL of the solution, 10mL of a 0.02g/mL glucose solution, and 0.2g/mL KHCO3The solution was 5mL and mixed. And directly dripping the mixed solution onto a PDMS film treated by 0.01g/mL HAuCl4 solution, sealing and reacting for 24h in a dark place, and finally forming the AuNPs-PDMS film.
4. Preparing a second dielectric layer; and (3) at room temperature, spin-coating PI viscous dropping liquid on the prepared AuNPs-PDMS film by using a spin coater, curing for 6 hours at room temperature to form a PI film, and assembling an upper electrode layer PET film with an Ag electrode on the PI film.
Claims (7)
1. A flexible tactile sensor having a multilayer structure, characterized in that: the flexible touch sensor comprises a PET film upper electrode layer, an upper electrode, a PI film dielectric layer, an AuNPs-PDMS composite film dielectric layer, a lower electrode and a PET film lower electrode layer from top to bottom; the AuNPs-PDMS composite film is used as a first dielectric layer of the sensor; the PI film is used as a second dielectric layer of the sensor; by utilizing the double advantages of the gold nanometer and the PDMS, when an applied external force acts on the upper electrode layer of the PET film, the flexible multilayer tactile sensor is compressed, and the change of the relative displacement delta L occurs between the upper electrode and the lower electrode, so that the capacitance is changed; the upper electrode layer and the lower electrode layer which are made of the PET film not only provide good ductility, but also have good adhesive strength between the PET film and the metal electrode, so that the metal electrode is prevented from being directly deposited on the AuNPs-PDMS composite film dielectric layer, and cracks are prevented from being generated due to the influence of thermal cycling.
2. A flexible tactile sensor having a multilayer structure according to claim 1, wherein: the thickness of the upper electrode layer of the PET film and the thickness of the lower electrode layer of the PET film are 25-100 um.
3. A flexible tactile sensor having a multilayer structure according to claim 1, wherein: the upper electrode and the lower electrode are made of Cu, Ag or Au, and the thickness of the upper electrode and the lower electrode is 8-10 nm.
4. A flexible tactile sensor having a multilayer structure according to claim 1, wherein: the thickness of the AuNPs-PDMS composite film is 2-10 nm.
5. A flexible tactile sensor having a multilayer structure according to claim 1, wherein: the thickness of the PI film is 2-10 nm.
6. The method for manufacturing a flexible tactile sensor with a multilayer structure according to claim 1, comprising the following steps:
(1) selecting a PET film as an upper electrode layer and a lower electrode layer, adopting an MEMS (micro electro mechanical System) manufacturing process, using a metal target material, and plating electrodes on the PET film by a magnetron sputtering technology;
(2) preparing a PDMS film on a silanized glass substrate;
(3) the method is characterized in that a conventional method for soaking a PDMS film in a gold-plating solution is not adopted, the gold-plating solution is directly and uniformly dripped on the PDMS film, Au nano particles with high dielectric constant are added on the PDMS film, and the AuNPs-PDMS composite film is formed to be used as a first dielectric layer of the sensor;
(4) spin-coating PI on the prepared AuNPs-PDMS composite film to form a PI film which is used as a second dielectric layer for film uncovering operation;
(5) and assembling the double-dielectric-layer film obtained by film uncovering to a lower electrode layer of a PET film with an electrode by using acrylate glue, and assembling an upper electrode layer of another PET film with an electrode on the PI film.
7. The method for manufacturing a flexible tactile sensor with a multilayer structure according to claim 1, comprising the following steps:
(1) selecting a PET film as an upper electrode layer and a lower electrode layer, adopting an MEMS (micro electro mechanical System) manufacturing process, using a metal target material, and plating electrodes on the PET film by a magnetron sputtering technology;
(2) preparing a PDMS film on the lower electrode layer of the PET film with the prepared electrode;
(3) the conventional method of soaking the PDMS film in the gold-plating solution is not adopted, but the gold-plating solution is directly and uniformly dripped on the PDMS film, Au nano particles with high dielectric constant are added on the PDMS film, and the AuNPs-PDMS composite film is formed to be used as a first dielectric layer of the capacitive sensor;
(4) spin-coating PI on the prepared AuNPs-PDMS composite film to form a PI film as a second dielectric layer;
(5) and assembling a PET film upper electrode layer with an electrode on the PI film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711401408.XA CN108225620B (en) | 2017-12-22 | 2017-12-22 | Flexible touch sensor with multilayer structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711401408.XA CN108225620B (en) | 2017-12-22 | 2017-12-22 | Flexible touch sensor with multilayer structure and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108225620A CN108225620A (en) | 2018-06-29 |
| CN108225620B true CN108225620B (en) | 2020-06-26 |
Family
ID=62648576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711401408.XA Active CN108225620B (en) | 2017-12-22 | 2017-12-22 | Flexible touch sensor with multilayer structure and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108225620B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109870254B (en) * | 2019-03-01 | 2020-05-29 | 厦门大学 | High-sensitivity capacitance type sliding touch sensor |
| CN111533081B (en) * | 2020-05-18 | 2022-07-05 | 吉林大学 | Composite flexible pressure sensor based on bionic microstructure and preparation method thereof |
| CN111855029B (en) * | 2020-07-24 | 2022-10-04 | 京东方科技集团股份有限公司 | Flexible pressure sensor, preparation method thereof and electronic device |
| CN113217313B (en) * | 2021-04-22 | 2022-05-17 | 北京航空航天大学杭州创新研究院 | Response actuating device, preparation method and application |
| CN114485376A (en) * | 2021-11-03 | 2022-05-13 | 上海海事大学 | Preparation method of low-temperature flexible strain sensor |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101059380A (en) * | 2007-02-16 | 2007-10-24 | 中国科学院上海微系统与信息技术研究所 | Flexible capacitance type touch sensor production method |
| CN102435658A (en) * | 2011-07-29 | 2012-05-02 | 南昌大学 | Method for modifying green in-situ polydimethylsiloxane microchip |
| CN103616097A (en) * | 2013-10-22 | 2014-03-05 | 中国石油大学(华东) | Flexible film tactile sensor and production method thereof |
| CN103913486A (en) * | 2014-04-12 | 2014-07-09 | 太原理工大学 | Method for preparing AuNPs-PDMS composite micro film biosensor |
| CN103954382A (en) * | 2014-05-14 | 2014-07-30 | 合肥工业大学 | Dielectric-varied capacitive flexible three-dimensional force tactile sensor |
| CN104583762A (en) * | 2012-03-26 | 2015-04-29 | 泰克年研究发展基金会公司 | A platform unit for combined sensing of pressure, temperature and humidity |
| CN106229160A (en) * | 2016-09-26 | 2016-12-14 | 常州大学 | A kind of high-power stretchable ultracapacitor and preparation method thereof |
| CN106880355A (en) * | 2017-01-13 | 2017-06-23 | 电子科技大学 | One kind is based on capacity coupled flexible biological electrod-array and preparation method thereof |
-
2017
- 2017-12-22 CN CN201711401408.XA patent/CN108225620B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101059380A (en) * | 2007-02-16 | 2007-10-24 | 中国科学院上海微系统与信息技术研究所 | Flexible capacitance type touch sensor production method |
| CN102435658A (en) * | 2011-07-29 | 2012-05-02 | 南昌大学 | Method for modifying green in-situ polydimethylsiloxane microchip |
| CN104583762A (en) * | 2012-03-26 | 2015-04-29 | 泰克年研究发展基金会公司 | A platform unit for combined sensing of pressure, temperature and humidity |
| CN103616097A (en) * | 2013-10-22 | 2014-03-05 | 中国石油大学(华东) | Flexible film tactile sensor and production method thereof |
| CN103913486A (en) * | 2014-04-12 | 2014-07-09 | 太原理工大学 | Method for preparing AuNPs-PDMS composite micro film biosensor |
| CN103954382A (en) * | 2014-05-14 | 2014-07-30 | 合肥工业大学 | Dielectric-varied capacitive flexible three-dimensional force tactile sensor |
| CN106229160A (en) * | 2016-09-26 | 2016-12-14 | 常州大学 | A kind of high-power stretchable ultracapacitor and preparation method thereof |
| CN106880355A (en) * | 2017-01-13 | 2017-06-23 | 电子科技大学 | One kind is based on capacity coupled flexible biological electrod-array and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108225620A (en) | 2018-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108225620B (en) | Flexible touch sensor with multilayer structure and manufacturing method thereof | |
| Gao et al. | Microchannel‐confined MXene based flexible piezoresistive multifunctional micro‐force sensor | |
| CN110556472B (en) | PDMS material-based coated pressure sensor and preparation method thereof | |
| CN108376839B (en) | Metamaterial based on liquid metal microfluidics and preparation method thereof | |
| CN110174195A (en) | A kind of Bionic flexible pressure sensor | |
| CN106908176B (en) | Multi-phase dielectric layer capacitive pressure sensor with micro-structure and manufacturing method thereof | |
| Li et al. | A flexible and ultrasensitive interfacial iontronic multisensory sensor with an array of unique “cup-shaped” microcolumns for detecting pressure and temperature | |
| CN110108375B (en) | MXene material-based electronic skin and preparation method thereof | |
| Kim et al. | Fabrication of highly sensitive capacitive pressure sensors with porous PDMS dielectric layer via microwave treatment | |
| CN108515694B (en) | Flexible pressure sensor chip based on 3D printing technology and manufacturing method thereof | |
| CN106950267B (en) | Flexible electrode preparation method and flexible electrode | |
| CN110231056A (en) | Utilize the method and electronic skin sensor of ink jet printing flexibility micro-structure surface preparation micro-structure electrode | |
| CN111504522A (en) | Capacitive flexible stretching sensor based on S-shaped micro-channel liquid metal composite dielectric layer | |
| CN110491989A (en) | A kind of high sensitivity flexible electronic skin and preparation method thereof | |
| WO2022247018A1 (en) | Microcrack strain sensing element, preparation method therefor and application thereof | |
| CN112504518A (en) | Flexible capacitive pressure sensor and preparation method thereof | |
| CN108072389B (en) | A kind of wearable health monitoring sensor manufacturing process of bionical attaching type | |
| CN110849508B (en) | Flexible pressure sensor based on discrete contact structure and preparation method thereof | |
| CN102522491B (en) | Polymer device with driving and sensing capability, preparation thereof and application thereof | |
| CN104404475A (en) | Method for enhancing adhesive property between poly-p-xylylene thin film and metal layer | |
| CN105319245A (en) | Flexible organic film capacitive sensor capable of sensing humidity and gas simultaneously and manufacturing method thereof | |
| CN108955960A (en) | A kind of flexible touch sensation sensor of oxide thin film transistor formula | |
| CN105698978A (en) | PMMA film preparation method and PMMA film resistor-type flexible pressure sensor | |
| CN115058049B (en) | Variable-gradient structure flexible aerogel, preparation method thereof and flexible pressure sensor | |
| CN107790203A (en) | Microlayer model Drive And Its Driving Method based on electric FREQUENCY CONTROL |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210120 Address after: No. 159, Chengjiang Middle Road, Jiangyin City, Wuxi City, Jiangsu Province Patentee after: Jiangyin Intellectual Property Operation Co.,Ltd. Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: JIANGSU University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240119 Address after: 224200 east of Jingba road and north of Dongqu Second Road, Dongtai Economic Development Zone, Yancheng City, Jiangsu Province (in Dongtai Huimin urbanization construction and Development Co., Ltd.) Patentee after: Jiangsu Chuangqi Testing Technology Co.,Ltd. Address before: No. 159, Chengjiang Middle Road, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: Jiangyin Intellectual Property Operation Co.,Ltd. |
|
| TR01 | Transfer of patent right |