CN103913486A - Method for preparing AuNPs-PDMS composite micro film biosensor - Google Patents

Method for preparing AuNPs-PDMS composite micro film biosensor Download PDF

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CN103913486A
CN103913486A CN201410144773.7A CN201410144773A CN103913486A CN 103913486 A CN103913486 A CN 103913486A CN 201410144773 A CN201410144773 A CN 201410144773A CN 103913486 A CN103913486 A CN 103913486A
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CN103913486B (en
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桑胜波
张文栋
张丹
菅傲群
段倩倩
马文哲
李朋伟
胡杰
李刚
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Taiyuan University of Technology
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Abstract

The invention discloses a method for preparing AuNPs (nanogold)-PDMS (polydimethylsiloxane) composite micro film surface stress biosensor. The method comprises the following steps: by taking a PDMS film as a substrate and using a chloroauric acid solution as a first-step reducing agent, reducing to generate a gold seed; by utilizing the gold seed generated on the film and taking glucose and potassium bicarbonate as auxiliary reducing agents, performing second-step reduction on the composite film by using the chloroauric acid; by utilizing an AuNPs-PDMS composite film as a sensitive element of the sensor and taking PDMS as a substrate, preparing a gold electrode of the sensor by adopting a sputtering technology, and finishing preparation of the sensor. The electric conductivity of the AuNPs-PDMS composite film generated by the method is obviously improved, so that the sensitivity of the sensor is improved. Moreover, the preparation method is simple, and possibility is provided for miniature, low-cost batch production.

Description

The preparation method of the compound mems thin film biology sensor of AuNPs-PDMS
Technical field
The present invention relates to field of biosensors, specifically the preparation method of the compound mems thin film surface stress of a kind of AuNPs-PDMS biology sensor.
Background technology
Surface stress biology sensor can be converted into measurable optical, electrical or mechanical signal as the novel sensor of a class by the combination of intermolecular chemical bond, and then realizes sensing detection.The method can be carried out detection analysis to analyte from molecular level, has higher detection analysis precision, and this provides a good technical support for realizing high-precision disease detection, food agricultural chemicals or heavy metal pollution detection, biochemical pollution detection etc.
The sensitive element of sensor plays an important role in whole sensing system.At present, micro-cantilever and mems thin film are two kinds of sensitive elements based on surface stress biology sensor.Wherein, micro-cantilever type surface stress biology sensor has a large amount of research before this, but this structure has certain limitation, as non-specific adsorption.Comparatively speaking, no matter mems thin film is to have its advantage aspect signal transmission or analyte absorption.But, the structure processed complex of existing thin film capacitor type sensor, and output differential capacitance only have several volts, greatly increased the complexity of testing circuit.
Summary of the invention
The subject matter that the present invention exists in order to solve current surface stress biology sensor, as problems such as the processed complex degree of the non-Characteristic Adsorption of cantilever beam structure, thin film capacitor type sensor construction, provide the preparation method of the compound mems thin film surface stress of a kind of AuNPs-PDMS biology sensor.
The present invention adopts following technical scheme to realize:
A preparation method for the compound mems thin film biology sensor of AuNPs-PDMS, comprises the steps:
(1), clean glass sheet, and glass sheet is carried out to silanization processing with TMCS, for subsequent use;
(2), preparation PDMS solution;
(3), getting the upper surface spin coating PDMS solution of glass sheet ready, formation PDMS film after solidifying;
(4), step (3) gained glass sheet is immersed in to HAuCl 4in solution 20~24 hours, reduce for the first time;
(5), use HAuCl 4solution, glucose solution and potassium bicarbonate solution configuration reducing solution, be immersed in reducing solution 20~24 hours by step (4) gained glass sheet, reduces for the second time;
(6), preparation PDMS solution, then PDMS soln using mould is prepared sensor base, the upper surface middle part of described sensor base is formed with cavity;
(7) around the cavity of sensor base upper surface, be coated with PDMS solution, the PDMS film on step (5) gained glass sheet is peeled from glass sheet, be attached to the upper surface of sensor base and hide cavity completely;
(8) at the upper surface sputtered metal film of sensor base;
(9) spin coating photoresist on metallic film, after exposure and development photoresist, wet etching metallic film, goes after photoresist, form two independently electrode structures, described each electrode structure is positioned in the PDMS film edge of sensor base upper surface at least partly.
PDMS(dimethyl silicone polymer) as a kind of novel film material, there is good biological fitness.Compared with other typical thin films materials (silicon, monox, aluminium nitride, PMMA, SU8 etc.), there is relatively little Young modulus (12kPa-2.5Mpa).AuNPs is the important nano material of a class, and preparation is simple, has high stability, small-size effect, surface effect, quantum effect, macro quanta tunnel effect and biocompatibility, is easy to carry out surface chemical modification.
In said method, select to adopt twice reducing process, first in step (4), use HAuCl 4solution reduces for the first time, and some nano Au particles reduce on PDMS film as seed.Then use HAuCl 4the ratio preparation reducing solution that solution, glucose solution, potassium bicarbonate solution are 2:1:1 according to volume ratio, again the PDMS film that contains gold particle is reduced for the second time, golden nanometer particle is further deposited on around gold seeds, thereby prepared, electric conductivity is good, the compound mems thin film of AuNPs-PDMS of even thickness,, the shortcoming such as film conductivity bad very few such as golden nanometer particle on composite membrane that have overcome that additive method (as a stage reduction method, Physical etc.) exists.The compound mems thin film of AuNPs-PDMS forming of being combined with golden nanometer particle based on PDMS possesses the two-fold advantage of bi-material; have the advantages such as satisfactory electrical conductivity, bioaffinity and the super-hydrophobicity of dimethyl silicone polymer and nm of gold concurrently, be widely used in bio-sensing, Biofunctional materials, environmental protection, the field such as micro-fluidic.
The compound mems thin film of AuNPs-PDMS deflects under surface stress effect, can cause nano Au particle average particle spacing to increase, thereby the electricity that causes thin film system is led and is changed, experimental results show that this class formation is compared with traditional metal or semiconductor pressure resistance sensing material, its sensitivity has exceeded about two orders of magnitude.
Therefore, when use, by the compound mems thin film of AuNPs-PDMS is modified, surface stress causes the compound mems thin film generation of AuNPs-PDMS strain, cavity on pedestal provides the space of strain for the compound mems thin film of AuNPs-PDMS, and then by two electrode structures independently on sensor, the conductivity variations of the compound mems thin film of monitoring AuNPs-PDMS, carry out bio-sensing detection, there is the advantages such as highly sensitive, reproducible, good biocompatibility and high integration.
The present invention is reasonable in design, the compound mems thin film conductance type of highly sensitive AuNPs-PDMS surface stress biology sensor is prepared in processing, this sensor can solve the subject matter that current surface stress biology sensor exists, as the non-Characteristic Adsorption of cantilever beam structure, the processed complex degree of thin film capacitor type structure etc.
Brief description of the drawings
Fig. 1 is the schematic diagram after step (3).
Fig. 2 is the schematic diagram after step (4).
Fig. 3 is the schematic diagram after step (5).
Fig. 4 is the schematic diagram of the sensor base prepared of step (6).
Fig. 5 is the schematic diagram after step (7).
Fig. 6 is the schematic diagram after step (8).
Fig. 7 is the schematic diagram after step (9).
Fig. 8 is the vertical view of Fig. 7.
In figure, 1-PDMS film, 2-glass sheet, 3-Au particle, the Au particle of 4-secondary reduction, 5-sensor base, 6-cavity, 7-AuNPs-PDMS composite membrane, 8-gold film, 9-chromium film, 10-hearth electrode, the 11-electrode that goes between.
Embodiment
Below in conjunction with accompanying drawing, specific embodiments of the invention are elaborated.
A preparation method for the compound mems thin film surface stress of AuNPs-PDMS biology sensor, comprises the steps:
(1), clean glass sheet 2, and glass sheet is carried out to silanization processing with TMCS; Concrete grammar is as follows:
Prepare glass sheet size 1.3cm × 1.3cm.Be equipped with cleaning fluid according to volume ratio (concentrated sulphuric acid: hydrogen peroxide=4:1), glass sheet is put into.Use cleaning machine to clean at normal temperatures 15min, clean and finish rear use deionized water rinsing glass sheet, and dry up with nitrogen.Prepare silylating reagent TMCS, glass sheet is put into double dish, splash into a certain amount of silylating reagent, cover double dish lid, after 20 minutes, after deionized water rinsing, dry up with nitrogen.So far glass sheet silanization completes, and its surface is with methyl, and hydrophobicity strengthens.
(2), prepare 5g dimethyl silicone polymer solution taking Sylgard184 as starting material; Concrete grammar is as follows:
Comprise one bottle of base fluid and one bottle of hardening agent taking Sylgard184(Sygard184) as starting material, according to the dimethyl silicone polymer solution of the proportional arrangement 5g of volume ratio (base fluid: hardening agent=9:1), mix to bubble and be evenly distributed in solution with stirrer, then vacuumize with vacuum drying chamber, repeat five to six times until exist without bubble in solution.
(3), getting the thick dimethyl silicone polymer film 1 of upper surface spin coating 10 μ m of glass sheet ready, as shown in Figure 1; Concrete grammar is as follows:
Use spin coating instrument to carry out spin coating, process is divided into three phases: first stage rotating speed is from 0~1500rpm, and the acceleration time is 6s, enters for the 2nd stage; The 2nd stage rotating speed maintains 1500rpm, maintains 60s; The 3rd stage rotating speed is from 1500~0rpm, and deceleration time is to stop after 6s.Taking out glass sheet, to be placed on temperature be on the baking platform of 70 DEG C, to carry out solidifying of dimethyl silicone polymer mems thin film, and the time is 2 hours, and obtaining homogeneous, thickness is the dimethyl silicone polymer mems thin film of 10 μ m.
(4), at the HAuCl of 0.01g/ml 4in solution, PDMS film is reduced for the first time, wherein, the curing agent component in PDMS film, as reductive agent, reduces gold particle on PDMS film, as shown in Figure 2; Concrete grammar is as follows:
Get the HAuCl of 0.01g/ml ready 4solution, puts into measuring cup by PDMS film, adds chlorauric acid solution 1ml, soaks 20-24 hour.
(5) use HAuCl 4, the reducing solution for preparing of glucose, saleratus reduces for the second time to film, as shown in Figure 3; Concrete grammar is as follows:
Get the HAuCl of 0.01g/ml 4the potassium bicarbonate solution 1250 μ l of solution 2500 μ l, 0.2g/ml and the glucose solution of 0.02g/ml 1250 μ l preparation reducing solutions, be immersed in step (4) gained glass sheet in the reducing solution preparing, and soaks 20-24 hour.Wherein, glucose solution provides a kind of reductive agent, and saleratus provides a kind of alkaline environment, and the PDMS film that contains gold particle is reduced for the second time, nano Au particle is further deposited on around gold seeds, thereby prepared, electric conductivity is good, the AuNPs-PDMS composite membrane 7 of even thickness.
(6), taking PDMS as material, in sensor die, make sensor base, as shown in Figure 4; Concrete grammar is as follows:
Comprise one bottle of base fluid and one bottle of hardening agent taking Sylgard184(Sygard184) as starting material, according to the dimethyl silicone polymer solution of the proportional arrangement 20g of volume ratio (base fluid: hardening agent=9:1), mix to bubble and be evenly distributed in solution with stirrer, then vacuumize with vacuum drying chamber, repeat five to six times until exist without bubble in solution.PDMS solution is poured in sensor die, then mould is put into vacuum drying chamber, under 150 degrees Celsius, heat 1 hour, solidify PDMS.Sensor base is taken out from mould.Those skilled in the art can prepare difform mould according to actual requirement, easily realize, and again repeat no more.
The upper surface middle part of described sensor base 5 is formed with cavity 6; In the present embodiment, sensor base 5 is cylindric, and it is cylindric that cavity 6 is also.
(7), around the cavity 6 of sensor base 5 upper surfaces, be coated with trace P DMS solution, the AuNPs-PDMS composite membrane 7 making is peeled from glass sheet 2, be attached to the upper surface of sensor base 5 and hide cavity 6 completely, as shown in Figure 5.
(8), in the ready-made structure of step (7) sputter gold film 8 and chromium film 9, as shown in Figure 6; Concrete grammar is as follows:
First, sputter chromium film 9 in AuNPs-PDMS composite membrane and sensor base, technical parameter is: base vacuum: 1.0 × 10-3Pa, argon flow amount: 60sccm, sputtering pressure: 0.15Pa, sputtering power: 300W, radio-frequency match (C2/C1): 550/120, sputtering time: 19s, self-bias: 130V.
Then, the thick golden film 8 of sputter 50nm on chromium film 9, technical parameter is: base vacuum: 1.0 × 10-3Pa, argon flow amount: 60sccm, sputtering pressure: 0.2Pa, sputtering power: 300W, radio-frequency match (C2/C1): 600/110, sputtering time: 20s, self-bias: 130V.
(9), spin coating photoresist on metal film, after exposure and development photoresist, wet etching metal film, go structurally to form two absolute electrode structures that are symmetric after photoresist, described electrode structure comprises hearth electrode 10 and connected lead-in wire electrode 11, described hearth electrode 10 is positioned in the PDMS film edge of sensor base 5 upper surfaces, and described lead-in wire electrode 11 is positioned at sensor base 5 upper surfaces, as shown in Figure 7,8.The diameter of described circular base electrode is 500 μ m; Concrete grammar is as follows:
First, on golden film, spin coating model is that EPI680, thickness are the positive photoresist of 2.5 μ m.Spin coating process is divided into 4 stages.The 1st stage rotating speed is from 0~100rpm, and the acceleration time is 7s, enters for the 2nd stage after maintaining 10s; The 2nd stage rotating speed is from 100~200rpm, and the acceleration time is 7s, does not stop and directly enters for the 3rd stage; The 3rd stage rotating speed is from 200~3200rpm, and the acceleration time is 8s, maintains 32s.The 4th stage rotating speed is from 3200~0rpm, deceleration time 15s, rotating speed reduces to zero rear gluing to be finished.
After completing, on the baking platform of 100 DEG C, dry, the time is 120s.The mask plate that in the present embodiment, exposure is used is bright version.After having exposed, glass sheet is put into the 55s that develops in the developer solution that model is TMAH, after deionized water rinsing, dried up with nitrogen.
Glass sheet is immersed in golden corrosive liquid to approximately 5~6s, after deionized water rinsing, dry up with nitrogen, wherein, golden corrosive liquid is according to iodine: the ratio of potassium iodide: deionized water=65g:113g:200ml is equipped with.
Glass sheet is immersed to approximately 10~12s of chromium corrosive liquid again, after deionized water rinsing, dry up with nitrogen, wherein, chromium corrosive liquid is according to ammonium ceric nitrate: acetic acid: the ratio of deionized water=22g:8 ml:70 ml is equipped with.
Afterwards, in acetone soln, soak photoresist is washed away, in alcoholic solution, soak acetone is washed away, after deionized water rinsing, dry up with nitrogen, two absolute electrode structures complete.
So far, prepared by the compound mems thin film surface stress of AuNPs-PDMS biology sensor.

Claims (8)

1. a preparation method for the compound mems thin film biology sensor of AuNPs-PDMS, is characterized in that: comprise the steps:
(1), clean glass sheet (2), and use TMCS(trimethyl chlorosilane) glass sheet is carried out to silanization processing, for subsequent use;
(2), preparation PDMS solution;
(3), getting the upper surface spin coating PDMS solution of glass sheet (2) ready, formation PDMS film (1) after solidifying;
(4), step (3) gained glass sheet is immersed in to HAuCl 4in solution 20~24 hours, reduce for the first time;
(5), use HAuCl 4solution, glucose solution and potassium bicarbonate solution configuration reducing solution, be immersed in reducing solution 20~24 hours by step (4) gained glass sheet, reduces for the second time;
(6), preparation PDMS solution, then PDMS soln using mould is prepared sensor base (5), the upper surface middle part of described sensor base (5) is formed with cavity (6);
(7) around the cavity (6) of sensor base (5) upper surface, be coated with PDMS solution, the PDMS film on step (5) gained glass sheet is peeled from glass sheet, be attached to the upper surface of sensor base (5) and hide cavity (6) completely;
(8) at the upper surface sputtered metal film of sensor base (5);
(9) spin coating photoresist on metallic film, after exposure and development photoresist, wet etching metallic film, goes after photoresist, form two independently electrode structures, described each electrode structure is positioned in the PDMS film edge of sensor base upper surface at least partly.
2. the preparation method of the compound mems thin film biology sensor of AuNPs-PDMS according to claim 1, it is characterized in that: in step (9), two absolute electrode structures of preparation are symmetric, described electrode structure comprises hearth electrode (10) and connected lead-in wire electrode (11), described hearth electrode (10) is positioned in the PDMS film edge of sensor base (5) upper surface, and described lead-in wire electrode (11) is positioned at sensor base (5) upper surface.
3. the preparation method of the compound mems thin film biology sensor of AuNPs-PDMS according to claim 1 and 2, is characterized in that: in step (8), at upper surface sputter chromium film (9) and the golden film (8) successively of sensor base (5).
4. the preparation method of the compound mems thin film biology sensor of AuNPs-PDMS according to claim 3, it is characterized in that: in step (8), first, at sensor base (5) upper surface sputter chromium film (9), technical parameter is: base vacuum: 1.0 × 10-3Pa, argon flow amount: 60sccm, sputtering pressure: 0.15Pa, sputtering power: 300W, radio-frequency match (C2/C1): 550/120, sputtering time: 19s, self-bias: 130V;
Then, at the upper thick golden film (8) of sputter 50nm of chromium film (9), technical parameter is: base vacuum: 1.0 × 10-3Pa, argon flow amount: 60sccm, sputtering pressure: 0.2Pa, sputtering power: 300W, radio-frequency match (C2/C1): 600/110, sputtering time: 20s, self-bias: 130V.
5. the preparation method of the compound mems thin film biology sensor of AuNPs-PDMS according to claim 4, is characterized in that: the concrete grammar of step (9) is as follows:
First, be that EPI680, thickness are the positive photoresist of 2.5 μ m in the upper spin coating model of golden film (8), spin coating process is divided into 4 stages: the 1st stage rotating speed is from 0~100rpm, and the acceleration time is 7s, enters for the 2nd stage after maintaining 10s; The 2nd stage rotating speed is from 100~200rpm, and the acceleration time is 7s, does not stop and directly enters for the 3rd stage; The 3rd stage rotating speed is from 200~3200rpm, and the acceleration time is 8s, maintains 32s; The 4th stage rotating speed is from 3200~0rpm, deceleration time 15s, rotating speed reduces to zero rear gluing to be finished; After completing, on the baking platform of 100 DEG C, dry, the time is 120s;
Then expose, after having exposed, put into the 55s that develops in the developer solution that model is TMAH, after deionized water rinsing, dry up with nitrogen;
Afterwards, immerse 5~6s in golden corrosive liquid, after deionized water rinsing, dry up with nitrogen, wherein, golden corrosive liquid is according to iodine: the ratio of potassium iodide: deionized water=65g:113g:200ml is equipped with;
Afterwards, immerse chromium corrosive liquid 10~12s, after deionized water rinsing, dry up with nitrogen, wherein, chromium corrosive liquid is according to ammonium ceric nitrate: the ratio of acetic acid: deionized water=22g:8ml:70ml is equipped with;
Finally, in acetone soln, soak photoresist is washed away, in alcoholic solution, soak acetone is washed away, after deionized water rinsing, dry up with nitrogen, electrode structure completes.
6. the preparation method of the compound mems thin film biology sensor of AuNPs-PDMS according to claim 5, it is characterized in that: in step (2) and step (6), the preparation method of PDMS solution is as follows: taking Sylgard184 as starting material, Sygard184 comprises base fluid and hardening agent, be the proportional arrangement dimethyl silicone polymer solution of base fluid: hardening agent=9:1 according to volume ratio, mix to bubble and be evenly distributed in solution with stirrer, then repeat to vacuumize with vacuum drying chamber, until exist without bubble in solution.
7. the preparation method of the compound mems thin film biology sensor of AuNPs-PDMS according to claim 6, is characterized in that: in step (3), the thickness of PDMS film is 10 μ m; Concrete grammar is as follows: use spin coating instrument to carry out spin coating, process is divided into three phases: the 1st stage rotating speed is from 0~1500rpm, and the acceleration time is 6s, enters for the 2nd stage; The 2nd stage rotating speed maintains 1500rpm, maintains 60s; The 3rd stage rotating speed is from 1500~0rpm, and deceleration time is to stop after 6s; Afterwards, taking out glass sheet, to be placed on temperature be on the baking platform of 70 DEG C, to carry out solidifying of PDMS film, and the time is 2 hours, and obtaining thickness is the PDMS film of 10 μ m.
8. the preparation method of the compound mems thin film biology sensor of AuNPs-PDMS according to claim 7, is characterized in that: in step (5), and described HAuCl 4the volume ratio of solution, glucose solution and potassium bicarbonate solution is that 2:1:1, concentration ratio are 1:20:2.
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