CN102502478A - Manufacturing method for polydimethylsiloxane microfilm biosensor based on surface stress - Google Patents
Manufacturing method for polydimethylsiloxane microfilm biosensor based on surface stress Download PDFInfo
- Publication number
- CN102502478A CN102502478A CN2011103488530A CN201110348853A CN102502478A CN 102502478 A CN102502478 A CN 102502478A CN 2011103488530 A CN2011103488530 A CN 2011103488530A CN 201110348853 A CN201110348853 A CN 201110348853A CN 102502478 A CN102502478 A CN 102502478A
- Authority
- CN
- China
- Prior art keywords
- silicone polymer
- dimethyl silicone
- spin coating
- silicon nitride
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Micromachines (AREA)
Abstract
The invention discloses a manufacturing method for a polydimethylsiloxane microfilm biosensor based on surface stress, comprising the following steps of: using Sylgard 184 and Dow Corning as original materials for preparing a polydimethylsiloxane microfilm, that is, base solution and a curing agent; using hexane as a thinning agent; using one-step spinning process with a rotational speed of 6200 rpm/132 s for successfully preparing the polydimethylsiloxane microfilm uniform in texture and in a thickness of about 1 micron as the sensing layer of the sensor according to the volume ratio 10: 1: 3 of the base solution to the curing agent to the hexane; and evaporating a gold film on the surface, so as to facilitate functionalization for the sensing layer. The manufacturing method for a polydimethylsiloxane microfilm biosensor based on surface stress disclosed by the invention is simple in preparation process, high in sensitivity, and capable of realizing miniaturization, low cost and batch production.
Description
Technical field
Present technique relates to biology sensor and makes the field, specifically is a kind of dimethyl silicone polymer surface stress mems thin film biology sensor manufacturing approach.
Background technology
Microbiosensor based on surface stress is a kind of novel biology sensor; Because of it has important application at aspects such as medical diagnosis on disease, biological sensing material research, organizational project, finishing, implantating biological sensors and drug delivery systems, receive extensive concern both domestic and external in recent years.Because it is to utilize the free energy conversion of reaction interface to carry out sensing; Therefore needn't demarcate determinand; It is a kind of simple bio-sensing method; Can realize different determinands are accurately detected through the different surface modification, have broad application prospects and the huge social economic benefit.
Current microbiosensor based on surface stress mainly is the micro-cantilever geometry, adopts traditional micro-nano processing technology usually, and research shows and utilizes this type of sensor to detect multiple biochemical reaction.Yet,, also exist the deficiency of following three aspects based on the micro-cantilever biology sensor of surface stress.At first, in the sensing testing process, whole micro-cantilever need be immersed in the testing liquid; This is very general situation in the middle of biochemistry detection; Like this, because there is non-selective absorption in the micro-cantilever back side to liquid to be measured, thereby introduce noise; This is the main noise source of this type of sensor, the signal to noise ratio of reduction sensor that will be serious.Secondly; Mostly material based on the micro-cantilever geometry is the stronger materials of rigidity such as silicon and silicon nitride thereof; Its Young's modulus (Young's modulus of silicon is 165Gpa, and the Young's modulus of silicon nitride is 310Gpa) is very big, therefore has the not high problem of sensitivity for fainter surface stress.Once more, this geometry of micro-cantilever also is not easy to the integrated of sensing unit and signal read-out system.
Along with the micro electronmechanical development of biology; Various organic materials obtain application more and more widely in MEMS, for example, organic material commonly used has polymethyl-benzene olefin(e) acid methyl esters; Dimethyl silicone polymer etc.; This just for overcoming the major defect of current this type of sensor, prepares high sensitivity and accuracy, and being convenient to microminiaturization and integrated surface stress biology sensor provides important foundation.Compare this type of sensor of tradition based on organic mems thin film biology sensor of surface stress following major advantage is arranged.The first, in the sensing testing process, have only the selective modification surface to contact, thereby overcome the two-sided absorption problem that traditional micro-cantilever surface stress biology sensor exists effectively with solution to be measured.The second, dimethyl silicone polymer has good biocompatibility, is applicable to the preparation biology sensor, simultaneously, and its Young's modulus very little (about 1.2k-0.5Gpa) and can pass through different processing technologys and regulate according to required.This has crucial effects with regard to for the detection of faint surface stress provides necessary condition for the detection sensitivity and the precision that improve this type of sensor.The 3rd, thus the geometry of meagre membrane type helps having established the technology basis with signals collecting, read-out system are mutually integrated for the microminiaturization of this type of biology sensor, low-costly and in high volume production.Yet, in the practical implementation process, be the biology sensor preparation technology of core sensing unit with dimethyl silicone polymer mems thin film structure; Exist many challenges, for example, how to obtain having higher sensitivity, the quality homogeneous film thickness dimethyl silicone polymer film of 1 μ m only; How to realize the harmless release of mems thin film, in addition, dimethyl silicone polymer is an organic material; Its processing technology has very high requirement to temperature, can not under too high temperature, handle, and have process compatibility problem etc. between the processing of traditional micro-nano; The present invention has successfully overcome these difficulties through the structure and the technological design of novelty, more than is main design of the present invention.
Summary of the invention
The present invention aims to provide a kind of processing method of novel dimethyl silicone polymer mems thin film biology sensor based on surface stress, and preparation is used for the surface stress biology sensor of biochemistry detection.To remedy the deficiency of tradition based on the surface stress biology sensor.Effectively overcome the consistency problem of dimethyl silicone polymer treatment process and traditional micro-nano processing technology in the invention.
A kind of dimethyl silicone polymer surface stress mems thin film biology sensor manufacturing approach may further comprise the steps:
(1) in former both sides deposit silicon nitride of [001] monocrystalline silicon;
(2) at the thick dimethyl silicone polymer film of the about 1 μ m of the surperficial spin coating of upper silicon nitride;
(3) spin coating and exposed photoresist;
(4) vapor deposition thickness is 20nm, the gold thin film of length * wide=390 μ m * 390 μ m;
(5) stripping photoresist;
(6) at the spin coating of the back side of silicon chip, exposed photoresist;
(7) with the method etching lower floor silicon nitride of reactive ion etching;
(8) potassium hydroxide etch silicon;
(9), discharge the dimethyl silicone polymer mems thin film of length * wide=400 μ m * 400 μ m with the method etching upper silicon nitride of reactive ion etching;
(10) be that binding agent is at dimethyl silicone polymer film surface bonding glass micro-cavity with the molten condition dimethyl silicone polymer.
Described manufacturing approach, said step (1) may further comprise the steps:
1) under the room temperature, be raw material according to base fluid with Sylgard 184 and hexane: curing agent: the proportional arrangement 20ml original solution of hexane=10: 1: 3 (volume ratio);
2) the powerful stirring mixes original solution;
3) original solution that mixes is poured into vacuumized 15 minutes in the glassware with the filtering bubble; Obtain spin coating liquid;
4) use spin coater on the upper silicon nitride surface spin coating speed with 6200rpm/132s carry out spin coating;
5) heated 15 minutes down at 150 ℃ with electrothermal furnace again after the coating, the dimethyl silicone polymer film that forms is cured.
Described manufacturing approach, described dimethyl silicone polymer mems thin film, its surperficial golden film length and width are: 390 μ m * 390 μ m, this dimension scale can provide maximum stress deformation.
The present invention is the original material of preparation dimethyl silicone polymer mems thin film with Sylgard 184 (Dow Corning Company products); Sylgard 184 comprises two parts, and promptly base fluid and curing agent adopt hexane as diluent; According to volume ratio: (base fluid: curing agent: ratio hexane=10: 1: 3); Use a step spin coating proceeding 6200rpm/132s, it is even successfully to have prepared quality, the dimethyl silicone polymer mems thin film of the about 1 μ m of thickness.
Adopting the bonding techniques under a kind of room temperature among the present invention, is binding agent with the dimethyl silicone polymer of molten condition, is used for the bonding between glass micro-cavity and the dimethyl silicone polymer film.
In sum; The present invention adopts novel dimethyl silicone polymer mems thin film structure; Through conventional surface processing and body micro fabrication; Realized processing and preparation, overcome the process compatibility problem of dimethyl silicone polymer treatment process and traditional micro-nano processing based on the dimethyl silicone polymer mems thin film biology sensor of surface stress.Prepared uniform film thickness; The dimethyl silicone polymer mems thin film of good quality; Adopting the dimethyl silicone polymer material of molten condition is binding agent; Realized the bonding of dimethyl silicone polymer film and glass, bond strength has reached the intensity of dimethyl silicone polymer material, satisfies the application need of such biology sensor fully.Adopt the surface stress biology sensor of the processing method preparation among the present invention, novel structure is practical, and preparation technology is simple; Can realize the detection of multiple atomic weak surface stress, have sensitivity, accuracy height, noise is little; Good biocompatibility; Simple to operate, characteristics such as be convenient to produce low-costly and in high volume, have broad application prospects.
Description of drawings
Fig. 1 is the structure principle chart of biology sensor of the present invention;
Fig. 2 is the former both sides deposit silicon nitride of silicon in [001] crystalline phase;
Fig. 3 is at upper silicon nitride surface spin coating dimethyl silicone polymer film;
Fig. 4 is spin coating and exposed photoresist;
Fig. 5 is the gold evaporation nano thin-film;
Fig. 6 is a stripping photoresist;
Fig. 7 is at underlying silicon nitride surface spin coating and exposed photoresist;
Fig. 8 is the reactive ion etching underlying silicon nitride;
Fig. 9 is a wet etching monocrystalline silicon;
Figure 10 discharges mems thin film for the reactive ion etching upper silicon nitride;
Figure 11 is a sensor profile in kind.
The specific embodiment
Below in conjunction with specific embodiment, the present invention is elaborated.
(1) prepare former of four inches [001] monocrystalline silicon, thickness is 525 μ m, uses the LPCVD method; Silicon chip is placed oxidation furnace and feeds dichloro-dihydro silicon and ammonia, and the flow of dichloro-dihydro silicon is 20sccm, and the flow of ammonia is 45sccm; Reaction temperature is 800 ℃, and pressure is 20pa, deposit 40 minutes; Can be at the thick silicon nitride film of the silicon chip surface about 80nm of deposition, same technology also deposits same silicon nitride film in this silicon chip back; Like Fig. 2, upper silicon nitride is as the protective layer of dimethyl silicone polymer film in the subsequent technique process, and lower floor's silicon nitride is as the protection mask of silicon anisotropic etching.
(2) be raw material with Sylgard 184 (Sylgard 184 comprises one bottle of base fluid and one bottle of curing agent), hexane; According to the volume ratio base fluid: curing agent: the proportional arrangement 20ml original solution of hexane=10: 1: 3; Be put into after mixing with agitator and vacuumize 15 minutes in the glassware with the filtering bubble; Use PhotoResist Spinner Model 5000-1 spin coater to carry out spin coating with the spin coating speed of 6200rpm/132s on the upper silicon nitride surface; Can obtain excellent performance, the dimethyl silicone polymer film of the about 1 μ m of quality homogeneous thickness is like Fig. 3.Heated 15 minutes down at 150 ℃ with electrothermal furnace again after the coating, the dimethyl silicone polymer film that forms is cured.
(3) with spin coater with the speed of 4000rpm/min at the thick positive photoresist AZ9260 of the about 1.8 μ m of dimethyl silicone polymer film surface spin coating one deck, under 95 ℃ condition, solidified ten minutes, use (Fischer then; A.3.19.09) the gold mask plate is a mask, utilizes the EV6/2 exposure sources to carry out the selectivity exposure, like Fig. 4, so that at dimethyl silicone polymer film surface gold evaporation layer (gold layer length x width=390 μ m * 390 μ m see table 1).
(4) use (Edwards Auto 306) electron beam evaporation plating device, deposit the thick gold layer of about 20nm like Fig. 5 at the dimethyl silicone polymer film surface.
(5) silicon slice placed is placed fill the acetone soln beaker, peel off the remaining photoresist of dimethyl silicone polymer surface, and, dry under the room temperature, like Fig. 6 with washed with de-ionized water one minute.
(6) thick at the former back side with the about 1.8 μ m of the speed spin coating positive photoresist (AZ1518) of 4000rpm/min, and with (Fischer; A.3.19.09) make public for mask plate utilizes EV 6/2 exposure machine, formation needs the pattern model of etching, like Fig. 7.Under 105 ℃ of environment, solidified 30 minutes at last.
(7) etch away the thick silicon nitride of the about 80nm of lower surface with the RIE-Oxford reactive ion etching machine, like Fig. 8.
(8) use concentration is 25% potassium hydroxide solution, and under 90 ℃ of environment, the wet etching silicon substrate is to form the bucking ladder engraved structure, like Fig. 9.Etch rate in [001] crystalline phase is about 1.84 μ m/min, after etching is accomplished with washed with de-ionized water about one minute.
(9) be same as the step 7 technical process; Reuse the RIE-Oxford reactive ion etching machine, the silicon nitride protective layer on etching upper strata, the dimethyl silicone polymer film of release length * wide=400 μ m * 400 μ m; Like Figure 10, the protection dimethyl silicone polymer film of taking every caution against error in the process.
(10) the dimethyl silicone polymer material that utilizes molten condition is as binding agent 110; At the dimethyl silicone polymer film that shifts spin coating molten condition on the glass substrate; Thereby the dimethyl silicone polymer binding agent adhesion 110 transfer portion binding agents of glass micro-cavity that will bonding and molten condition are to the glass micro-cavity edge; One be sidelong on the dimethyl silicone polymer film and form bonding what be stained with binding agent, the biology sensor of bonding glass micro-cavity is shown in figure 11.
(11) scribing, encapsulation, test
The present invention relates to biology sensor and make the field; Specifically be a kind of dimethyl silicone polymer surface stress mems thin film biology sensor manufacturing process, adapted to the needs of bio-sensing test, it is big effectively to have overcome traditional surface stress biology sensor noise based on micro cantilever structure; Sensitivity is not high; Be not easy to and shortcoming such as the signal read-out system is integrated, and can realize microminiaturization, low cost, mass production, can well satisfy the practical application needs of biology sensor preparation field.
Method for using and operation principle:
The solution that will contain biological cell to be measured is added drop-wise in this biology sensor active film microcavity, and the same concentration solution equivalent that does not contain biological cell to be measured is added drop-wise to reference in the film microcavity.Because lipopolysaccharides is contained on biological cell (like Escherichia coli) surface, it is rich in-COOH ,-OH, and-H ,=O waits chemical group, combines to produce stronger binding energy thereby can carry out specificity with the organic molecule of active film self assembly, causes film deformation.And with reference to there not being biological cell to be measured in the film; Its film deformation is main because the film deformation that the non-specific binding ability of gravity, solution and the film of dropping solution etc. cause; Can be used as the measurement of system noise signal, through active film signal and the film deformation signal that promptly obtains with reference to the film signal differential only to cause owing to bloom biological cell surface stress.When the health status of this cell occurs changing (like cell death); The structure of surface of cell membrane will produce certain variation; Make the stress of itself and sensor self assembly molecule layer produce to change accordingly and then cause the different of film deformation quantity; Utilize the white light interferometer test macro this miniature deformation accurately to be measured, realize the pair cell status detection.
The physical dimension of table 1 mems thin film
| Material | Length (μ m) | Width (μ m) | Thickness (μ m) |
| Dimethyl silicone polymer | 400 | 400 | 1 |
| Gold | 390 | 390 | 0.02 |
Should be understood that, concerning those of ordinary skills, can improve or conversion, and all these improvement and conversion all should belong to the protection domain of accompanying claims of the present invention according to above-mentioned explanation.
Claims (3)
1. a dimethyl silicone polymer surface stress mems thin film biology sensor manufacturing approach is characterized in that, may further comprise the steps:
(1) in former both sides deposit silicon nitride of [001] monocrystalline silicon;
(2) at the thick dimethyl silicone polymer film of the about 1 μ m of the surperficial spin coating of upper silicon nitride;
(3) spin coating and exposed photoresist;
(4) vapor deposition thickness is 20nm, the gold thin film of length * wide=390 μ m * 390 μ m;
(5) stripping photoresist;
(6) at the spin coating of the back side of silicon chip, exposed photoresist;
(7) with the method etching lower floor silicon nitride of reactive ion etching;
(8) potassium hydroxide etch silicon;
(9), discharge the dimethyl silicone polymer mems thin film of length * wide=400 μ m * 400 μ m with the method etching upper silicon nitride of reactive ion etching;
(10) be that binding agent is at dimethyl silicone polymer film surface bonding glass micro-cavity with the molten condition dimethyl silicone polymer.
2. manufacturing approach according to claim 1 is characterized in that, said step (1) may further comprise the steps:
1) under the room temperature, be raw material according to base fluid with Sylgard 184 and hexane: curing agent: the proportional arrangement 20ml original solution of hexane=10: 1: 3 (volume ratio);
2) the powerful stirring mixes original solution;
3) original solution that mixes is poured into vacuumized 15 minutes in the glassware with the filtering bubble; Obtain spin coating liquid;
4) use spin coater on the upper silicon nitride surface spin coating speed with 6200rpm/132s carry out spin coating;
5) heated 15 minutes down at 150 ℃ with electrothermal furnace again after the coating, the dimethyl silicone polymer film that forms is cured.
3. manufacturing approach according to claim 1 is characterized in that, described dimethyl silicone polymer mems thin film, and its surperficial golden film length and width are: 390 μ m * 390 μ m, this dimension scale can provide maximum stress deformation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103488530A CN102502478A (en) | 2011-11-08 | 2011-11-08 | Manufacturing method for polydimethylsiloxane microfilm biosensor based on surface stress |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103488530A CN102502478A (en) | 2011-11-08 | 2011-11-08 | Manufacturing method for polydimethylsiloxane microfilm biosensor based on surface stress |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102502478A true CN102502478A (en) | 2012-06-20 |
Family
ID=46214629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011103488530A Pending CN102502478A (en) | 2011-11-08 | 2011-11-08 | Manufacturing method for polydimethylsiloxane microfilm biosensor based on surface stress |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102502478A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913486A (en) * | 2014-04-12 | 2014-07-09 | 太原理工大学 | Method for preparing AuNPs-PDMS composite micro film biosensor |
| CN104706335A (en) * | 2013-12-17 | 2015-06-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Application of electronic skin to pulse detection and pulse detection system and method |
| CN108593160A (en) * | 2018-05-23 | 2018-09-28 | 太原理工大学 | A kind of manufacturing method of diaphragm type cantilever beam surface stress biosensor |
| CN114018301A (en) * | 2021-11-04 | 2022-02-08 | 中国工程物理研究院激光聚变研究中心 | Micro-nano optical fiber multifunctional sensor and preparation method and application thereof |
| CN115813591A (en) * | 2022-10-25 | 2023-03-21 | 哈尔滨工程大学 | Tooth occlusion stress distribution detection method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1743959A (en) * | 2004-09-01 | 2006-03-08 | 中国科学院电子学研究所 | Infrared light supply and preparation method based on micro-electronic mechanical system technique |
| CN1804043A (en) * | 2005-01-14 | 2006-07-19 | 北京大学 | PCR chip micro-system and method for preparing the same |
| CN101234745A (en) * | 2007-02-02 | 2008-08-06 | 北京大学 | MEMS device airtightness packaging method |
| CN101398377A (en) * | 2007-09-25 | 2009-04-01 | 北京大学 | Polymer SPR chip and method for making same |
| CN101792112A (en) * | 2010-03-03 | 2010-08-04 | 北京大学 | Micro fluid control detection device based on surface-enhanced Raman scattering active substrate |
-
2011
- 2011-11-08 CN CN2011103488530A patent/CN102502478A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1743959A (en) * | 2004-09-01 | 2006-03-08 | 中国科学院电子学研究所 | Infrared light supply and preparation method based on micro-electronic mechanical system technique |
| CN1804043A (en) * | 2005-01-14 | 2006-07-19 | 北京大学 | PCR chip micro-system and method for preparing the same |
| CN101234745A (en) * | 2007-02-02 | 2008-08-06 | 北京大学 | MEMS device airtightness packaging method |
| CN101398377A (en) * | 2007-09-25 | 2009-04-01 | 北京大学 | Polymer SPR chip and method for making same |
| CN101792112A (en) * | 2010-03-03 | 2010-08-04 | 北京大学 | Micro fluid control detection device based on surface-enhanced Raman scattering active substrate |
Non-Patent Citations (1)
| Title |
|---|
| SHENGBO SANG ET AL: ""Fabrication of a surface stress-based PDMS micro-membrane Biosensor"", 《MICROSYST TECHNOL》, vol. 16, no. 6, 3 April 2010 (2010-04-03), XP019804490 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104706335A (en) * | 2013-12-17 | 2015-06-17 | 中国科学院苏州纳米技术与纳米仿生研究所 | Application of electronic skin to pulse detection and pulse detection system and method |
| CN104706335B (en) * | 2013-12-17 | 2018-03-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Application of the electronic skin in pulse detection, pulse detection system and method |
| CN103913486A (en) * | 2014-04-12 | 2014-07-09 | 太原理工大学 | Method for preparing AuNPs-PDMS composite micro film biosensor |
| CN103913486B (en) * | 2014-04-12 | 2016-06-08 | 太原理工大学 | The preparation method of AuNPs-PDMS compound mems thin film biosensor |
| CN108593160A (en) * | 2018-05-23 | 2018-09-28 | 太原理工大学 | A kind of manufacturing method of diaphragm type cantilever beam surface stress biosensor |
| CN114018301A (en) * | 2021-11-04 | 2022-02-08 | 中国工程物理研究院激光聚变研究中心 | Micro-nano optical fiber multifunctional sensor and preparation method and application thereof |
| CN115813591A (en) * | 2022-10-25 | 2023-03-21 | 哈尔滨工程大学 | Tooth occlusion stress distribution detection method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103913486B (en) | The preparation method of AuNPs-PDMS compound mems thin film biosensor | |
| CN101592627B (en) | Method for manufacturing and integrating multichannel high-sensitive biosensor | |
| CN102502478A (en) | Manufacturing method for polydimethylsiloxane microfilm biosensor based on surface stress | |
| CN103991837B (en) | A kind of manufacture method of micro-nano ordered through hole array metal thin film sensor based on piezoelectric substrate thin slice | |
| CN201259501Y (en) | Miniflow control chip special for AIDS diagnosis | |
| CN102897709B (en) | Manufacturing method of low-cost micronano integrated structure | |
| CN201348631Y (en) | Special micro-fluidic chip for diagnosing AIDS | |
| Gao et al. | Gecko‐inspired paper artificial skin for intimate skin contact and multisensing | |
| CN103713022A (en) | Preparation method for polydimethylsiloxane micro-thin film capacitive biosensor | |
| CN110642222A (en) | High-length-diameter-ratio micron column array, and preparation method and application thereof | |
| CN101000290B (en) | Sample enrichment chip, manufacturing method | |
| CN109879238A (en) | Micro-cantilever device, processing method and a kind of detection method of embedded channel-type | |
| CN102175287A (en) | Measurement component of flow meter chip based on MEMS (micro electronic mechanical system) technology and manufacturing method thereof | |
| CN109633154B (en) | Novel solid-state nanopore structure and manufacturing method thereof | |
| CN106770165A (en) | Surface enhanced Raman substrate prepared based on the reaction of surface plasma body resonant vibration induced chemical and preparation method thereof | |
| CN102218833A (en) | Preparation method of soft template in lattice structure for ultraviolet nano imprinting | |
| CN114433260B (en) | Nano-fluidic chip based on nano-cracks and processing method thereof | |
| CN106744729A (en) | A kind of method of the anhydrous transfer nano material of large area | |
| CN105067471B (en) | A kind of micro-cantilever resonance structure sensor and its manufacture method | |
| CN109507422A (en) | Optics micro-fluidic chip based on polymer and multiple layer metal Nanoparticle Modified | |
| CN108163802A (en) | A kind of antigen detection material and its preparation method and application | |
| CN208500348U (en) | MEMS SOI wafer and MEMS sensor | |
| CN102249181A (en) | Manufacturing method of SU-8 photoresist micro-force sensor | |
| CN106969874A (en) | Differential pressure sensing arrangement of power sensitive film thickness controllable precise and preparation method thereof | |
| CN109896498A (en) | A kind of parallel-connection structure and processing method of embedded channel micro-cantilever |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20120620 |