CN101043015A - Chip retaining cushion - Google Patents
Chip retaining cushion Download PDFInfo
- Publication number
- CN101043015A CN101043015A CN 200710088734 CN200710088734A CN101043015A CN 101043015 A CN101043015 A CN 101043015A CN 200710088734 CN200710088734 CN 200710088734 CN 200710088734 A CN200710088734 A CN 200710088734A CN 101043015 A CN101043015 A CN 101043015A
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- Prior art keywords
- wafer
- ring
- type
- attraction
- maintaining part
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Links
- 238000012423 maintenance Methods 0.000 claims description 33
- 238000002425 crystallisation Methods 0.000 claims description 7
- 230000008025 crystallization Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 abstract description 6
- 238000005728 strengthening Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 79
- 239000004065 semiconductor Substances 0.000 description 43
- 230000032258 transport Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- -1 gallium nitride series compound Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Images
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
- Manipulator (AREA)
Abstract
The invention provides a wafer holding pad capable of adsorbing and holding without damages even if a ring shape strengthening portion is provied at a peripheral portion and a wafer is formed with recesses. The wafer holding pad holding a wafer in which an apparatus region formed with a plurality of apparatus and a peripheral residual region surronding the apparatus region are provided on a surface, includes: a holding portion comprising an adsorbing and holding face corersponding to the peripheral residual region, wherein the adsorbing and holding face is provided with adsorbing holes; and a support portion supporting the holding portion.
Description
Technical field
The present invention relates to be used to attract to keep the chip retaining cushion of wafers such as semiconductor wafer.
Background technology
In semiconductor device manufacturing process,, form devices such as IC, LSI in this zone that is divided by having divided a plurality of zones at the surperficial secant of arranging of presorting that is called Cutting Road of discoid semiconductor wafer roughly grid-likely.Then, by semiconductor wafer is cut off along Cutting Road, cut apart the zone that is formed with device and make each semiconductor chip.And, also be divided into optical devices such as single light-emitting diode, laser diode at the optical device wafer of the surperficial stacked gallium nitride series compound semiconductor of sapphire substrate etc., and extensively be used in electric equipment by cutting off along Cutting Road.
Above-mentioned such divided wafer ground or corroded the thickness of formation regulation to the back side before cutting off along Cutting Road.In recent years, for lightweight, the miniaturization that realizes electric equipment, required wafer thickness is formed below the 50 μ m.
Yet, damaged easily if wafer thickness is formed below the 50 μ m, there is the problem of difficult treatment such as transporting of wafer.
For addressing the above problem, the applicant is willing to propose a kind of wafer processing method 2005-165395 number as (Japan) is special, the thickness that makes device area is ground in the zone corresponding with device area of chip back surface form specific thickness, and, the peripheral part of residual chip back surface and form the rib of ring-type can form the wafer with rigidity thus.
In order to transport above-mentioned such wafer that forms specific thickness, generally use whole face to wafer to attract whole the absorption layer that keeps.But, to as the above-mentioned wafer that is provided with the ring-type rib and forms recess at peripheral part when utilizing whole absorption layer to attract to keep, have the crooked and damaged problem of device area that forms thinly.
Summary of the invention
The present invention be directed to that above-mentioned situation proposes, its major technique problem provides a kind of chip retaining cushion, even be provided with the ring-type rib and be formed with the wafer of recess at peripheral part, also can attract to keep not damagedly.
For solving above-mentioned major technology problem,,, it is characterized in that having to have the chip retaining cushion that device area that has formed a plurality of devices and the wafer that centers on the periphery remaining area of this device area keep on the surface according to the present invention:
Maintaining part possesses the attraction maintenance face corresponding to the ring-type of this periphery remaining area, and offers the attraction hole at this attraction maintenance face; And the support portion of this maintaining part of support.
Above-mentioned attraction hole is made of the connectivity slot that the attraction maintenance face along above-mentioned ring-type forms.
And, be formed with the mark of the crystallization direction of expression wafer at the periphery remaining area of wafer, be formed with above-mentioned connectivity slot in the zone except the zone that is formed with this mark.
Maintaining part with maintenance face of above-mentioned ring-type is provided with to concentric circles a plurality of corresponding to the diameter of wafer.
And, be formed with the atmosphere opening hole of inside in atmosphere of the maintaining part that makes the maintenance face that possesses ring-type in above-mentioned support portion.
The effect of invention
According to the present invention, a kind of chip retaining cushion, to having the device area that formed a plurality of devices on the surface and keeping around the wafer of the periphery remaining area of this device area, has maintaining part, the attraction that this maintaining part possesses corresponding to the ring-type of periphery remaining area keeps face and offers the attraction hole at this attraction maintenance face, utilizes the attraction of ring-type to keep face only to attract to keep wafer periphery remaining area; So not to device area effect negative pressure, therefore, even be provided with the rib of ring-type and be formed with the wafer of recess at device area at the periphery remaining area, also can not damaged device area and attract to keep.
Description of drawings
Fig. 1 is that expression is by the stereogram that carries out attrition process semiconductor wafer before in the wafer of chip retaining cushion maintenance according to the present invention.
Fig. 2 is the stereogram that the state of guard block has been pasted on the surface that is illustrated in semiconductor wafer shown in Figure 1.
Fig. 3 is the stereogram that is used for the back side of semiconductor wafer shown in Figure 1 is carried out the lapping device of attrition process.
Fig. 4 is the key diagram that the back side of semiconductor wafer is carried out the rib formation operation of attrition process by lapping device shown in Figure 3.
Fig. 5 has implemented the sectional view that rib shown in Figure 4 forms the semiconductor wafer of operation.
Fig. 6 amplifies the stereogram of expression to the major part that is arranged on the wafer carrying structure in the lapping device shown in Figure 3.
Fig. 7 is the ground plan that constitutes chip retaining cushion wafer carrying structure shown in Figure 6, that constitute according to the present invention.
Fig. 8 is an A-A line sectional view among Fig. 7.
Fig. 9 is the sectional view that has been kept the state of semiconductor wafer by the chip retaining cushion that constitutes according to the present invention.
Embodiment
Below, the preferred forms about chip retaining cushion of the present invention further describes with reference to the accompanying drawings.
At first, to attracting the processing method of the wafer of maintenance to describe by chip retaining cushion of the present invention, above-mentioned wafer has device area that has formed a plurality of devices and the periphery remaining area that centers on this device area on the surface.
Fig. 1 illustrates the stereogram as the semiconductor wafer that is processed into the preceding wafer of specific thickness.Semiconductor wafer 10 shown in Figure 1 is that the silicon wafer of 700 μ m constitutes by for example thickness, is at surperficial 10a to be formed with a plurality of Cutting Roads 101 grid-likely, and, be formed with devices 102 such as IC, LSI in a plurality of zones of dividing by these a plurality of Cutting Roads 101.The semiconductor wafer 10 of Gou Chenging has device area 104 that has formed device 102 and the periphery remaining area 105 that centers on this device area 104 like this.And,, be formed with otch 106 as the mark of the crystallization direction of representing silicon wafer in the periphery of semiconductor wafer shown in Figure 1 10.In addition, the mark as the crystallization direction of representing silicon wafer also has directional plane.
Surperficial 10a at the semiconductor wafer 10 that constitutes as described above pastes guard block 11 (guard block stickup operation) as illustrated in fig. 2.So, the form that the back side 10b of formation semiconductor wafer 10 exposes.
After implementing guard block stickup operation; implement following rib and form operation: the thickness that makes device area 104 is ground in the zone corresponding with device area 104 of the back side 11b of semiconductor wafer 10 form specific thickness; and, make back side 10b corresponding with periphery remaining area 105 regional residual of semiconductor wafer 10 and form the ring-type rib.This rib forms operation and implements by lapping device shown in Figure 3.
Lapping device 2 shown in Figure 3 has roughly rectangular-shaped device case 20.Upper right side is provided with fixed support plate 21 in Fig. 3 of device case 20.Medial surface at this fixed support plate 21 is provided with the pair of guide rails 22,22 of extending along the vertical direction.Grinding assembly 3 as grinding mechanism is installed on pair of guide rails 22,22 along the vertical direction movably.
Grinding assembly 3 has: assembly housing 31; Abrasive wheel 33, by fastening bolt 334 fastening being installed on the abrasive wheel installation portion 32, this abrasive wheel installation portion 32 is installed in the lower end of this assembly housing 31 with rotating freely; Motor 34 is installed in the upper end of this assembly housing 31, makes abrasive wheel installation portion 32 to rotating with the direction shown in the arrow 32a; The installing component 35 of assembly housing 31 has been installed; And the movable base 36 of this installing component 35 has been installed.Abrasive wheel 33 is made of the abrasive millstone 332 of discoid base 331 with the ring-type of the lower surface that is installed in this base 331, and base 331 is installed in abrasive wheel installation portion 32 by a plurality of fastening bolts 334.
Grinding assembly 3 has vertical movement mechanism 37 in the illustrated embodiment, makes note movable base 36 move and abrasive wheel 33 is moved on the direction vertical with the maintenance face of following chuck table along pair of guide rails 22,22.Vertical movement mechanism 37 possesses: external thread rod 371, dispose and can be rotated to support on abreast along the vertical direction with pair of guide rails 22,22 on the note fixed support frame plate 21; Pulse motor 372 is used for rotation and drives this external thread rod 371; And not shown internal thread piece, be installed on the note movable base 36, and screw togather with external thread rod 371; Carry out forward or reverse by 372 pairs of external thread rods of pulse motor 371 and drive, grinding assembly 3 is moved at above-below direction (with the vertical direction of maintenance face of following chuck table).
Lapping device 2 in the illustrated enforcement state has at the upper surface of the front side of said fixing supporting bracket 21 and device case 20 rotating platform 4 of configuration as one man roughly.This rotating platform 4 has formed larger-diameter discoid, by not shown rotary drive mechanism to suitably rotating with the direction shown in the arrow 4a.Under the situation of illustrated embodiment, dispose 2 chuck table 5 at rotating platform 4, these 2 chuck table can be rotated in horizontal plane with 180 phase angles of spending respectively.This chuck table 5 has disc-shaped base 51 and is formed discoid absorption maintenance chuck 52 by porous ceramic film material, attracts to keep absorption to keep the machined object that (maintenance face) placed on the chuck 52 by not shown attraction mechanism is worked.The chuck table 5 of Gou Chenging is as illustrated in fig. 3 by being driven to rotating with the direction shown in the arrow 5a by not shown rotary drive mechanism like this.Be configured in 2 chuck table 5 of rotating platform 4, by move to successively in rotating platform 4 suitable rotations machined object be transported into/transport regional A, attrition process area B, and machined object be transported into/transport regional A.The lapping device 2 of illustrated embodiment has and will remain on the chuck table 5 and implement the wafer carrying structure 6 that the semiconductor wafer 10 of following attrition process transports from chuck table 5.These wafer carrying structure 6 back describe in detail.
Utilize above-mentioned lapping device 2 to implement rib and form operation; to place by not shown wafer at the upper surface (maintenance face) of the chuck table 5 that is positioned at machined object and is transported into/transports regional A and be transported into guard block 11 sides that go up note semiconductor wafer 10 that mechanism transports, semiconductor wafer 10 is attracted to remain on the chuck table 5.Then, with rotating platform 4 by not shown rotary drive mechanism to the direction Rotate 180 degree shown in the arrow 4a, make the chuck table 5 of having placed semiconductor wafer 10 be positioned the attrition process area B.Here, with reference to Fig. 4 the relation that remains on semiconductor wafer 10 and the abrasive millstone 332 of the ring-type that constitutes abrasive wheel 33 on the chuck table 5 is described.The pivot P2 off-centre of the pivot P1 of chuck table 5 and the abrasive millstone 332 of ring-type, the size of the external diameter of the abrasive millstone 332 of ring-type is set for littler, bigger than the radius of boundary line 106 than the diameter of the boundary line 106 of the device area 104 of semiconductor wafer 10 and remaining area 105, and ring-type abrasive millstone 332 is by the pivot P1 (center of semiconductor wafer 10) of chuck table 5.
Then, as shown in Figures 3 and 4, chuck table 5 is to rotating with 300rpm with the direction shown in the arrow 5a, and make abrasive millstone 332 when rotating with 6000rpm with the direction shown in the arrow 32a, making vertical movement mechanism 37 work and making abrasive wheel 33 is that abrasive millstone 332 contacts with the back side of semiconductor wafer 10.And, be that grinding stone 332 grinds the feeding ormal weight downwards with the grinding feed speed of regulation with abrasive wheel 33.The result, grind the recess 104b that removes the zone corresponding and form the circle of specific thickness (for example 30 μ m) as illustrated in fig. 5 at the back side of semiconductor wafer 10, residual and periphery remaining area 105 corresponding zones and form the rib 105b of ring-type with device area 104.
Form operation if implemented above-mentioned rib, make rotating platform 4 rotate 180 degree by not shown rotary drive mechanism, make the chuck table 5 of having placed the semiconductor wafer 10 of implementing rib formation operation be positioned machined object and be transported into/transport regional A to the direction of representing with arrow 4a.Attract to remain at implementing of being positioned machined object and being transported into/transporting to keep on the chuck table 5 of the regional A semiconductor wafer 10 that rib forms operation on the maintenance pad 7 of wafer carrying structure 6 and be transported to next operation.
Here, describe with reference to figure 6 and Fig. 8 about wafer carrying structure 6.
Fig. 6 and wafer carrying structure 6 shown in Figure 8 have maintenance pad 7 that constitutes according to the present invention and the working arm 8 that supports this maintenance pad 7, and the base end part of working arm 8 links with rotation axis 9 as illustrated in fig. 3.And rotation axis 9 rotates by not shown rotary drive mechanism, and logical not shown travel mechanism moves along the vertical direction.
Keeping pad 7 to comprise as shown in Figures 7 and 8 with the periphery remaining area 105 of last note semiconductor wafer 10 is corresponding the 1st ring-type maintaining part 71, the 2nd ring-type maintaining part 72 that disposes on the radial outside concentric circles ground of the 1st ring-type maintaining part 71 and the support portion 73 of supporting the circle of the 1st ring-type maintaining part 71 and the 2nd ring-type maintaining part 72 of rib 105b of ring-type.It is that the corresponding ring-type of ring-type rib 105b attracts maintenance face 711 that the 1st ring-type maintaining part 71 has with the periphery remaining area 105 of semiconductor wafer 10.And, be provided with the attraction hole 712 that attracts maintenance face 711 openings in ring-type in the 1st ring-type maintaining part 71.This attracts hole 712 to be made of the connectivity slot that attracts maintenance face 711 to form along ring-type, except with the regional 711a corresponding as the otch 106 of the mark of the crystallization direction of expression semiconductor wafer 10 zone formation.Be provided with attraction passage 713 in attraction hole 712 connections that form like this.The 2nd ring-type maintaining part 72 forms the wafer corresponding size bigger than last note semiconductor wafer 10 with diameter, with the 1st ring-type maintaining part 71 comprise in the same manner the attraction of ring-type keep face 721, this ring-type attract maintenance face 721 openings attraction hole 722, and attract passage 723.The 1st ring-type maintaining part 71 of Gou Chenging and the 2nd ring-type maintaining part 72 are attracting mechanism 74 to be connected with attraction passage 713 respectively and are attracting passage 723 as illustrated in fig. 6 like this.
The circular support portion 73 of last note forms one with suitable synthetic resin and last note the 1st ring-type maintaining part 71 and the 2nd ring-type maintaining part 72 in the illustrated embodiment, with the 1st ring-type maintaining part 71 and the 2nd ring-type maintaining part 72 with the face connections that attract maintenance face 711 and attraction maintenance face 721 opposite sides.Be formed with the inboard inboard and the 2nd ring-type maintaining part 72 that makes the 1st ring-type maintaining part 71 in the circular support portion 73 that forms like this and open at a plurality of atmosphere openings hole 731 and 732 in the atmosphere respectively.In addition, the outstanding supporting axial region 733 that is formed with of 73 upper central portion in the support portion, this supports the leading section that axial region 733 is installed in above-mentioned working arm.Be provided with fastener 733a in the upper end of supporting axial region 733, this fastener 733a engages with holding section 81 on being formed on working arm 8.And, between the upper surface of support portion 73 and working arm 8, be provided with the collapse coil spring, in Fig. 8 to support portion 73 application of force downwards.
Wafer carrying structure 6 in the illustrated embodiment as above constitutes like that, below its effect is described.
Like this, keeping the pad 7 maintenance faces 711 by ring-type only to attract to keep the periphery remaining area 105 of semiconductor wafer 10 is the rib 105b of ring-type, so, form to such an extent that thin device area 104 can be because of the negative pressure failure in bending not to device area 104 effect negative pressure.And, there is the attraction that acts on the 1st ring-type maintaining part 71 to keep the negative pressure of face 711 to leak and acts on situation in the 1st ring-type maintaining part 71, but, be provided with atmosphere opening hole 731 in the support portion 73 that constitutes maintenance pad 7, so can not become negative pressure in the 1st ring-type maintaining part 71.Thereby, can prevent in advance forming of semiconductor wafer 10 thin device area 104 because of the crooked breakage that causes of negative pressure.And, in illustrated embodiment, keep the ring-type of pad 7 attract in the maintenance face 711 do not form the regional 711a that attracts hole 712 set for be positioned with as the corresponding position of the otch 106 of the mark of the crystallization direction of expression semiconductor wafer 10, so negative pressure can be by otch 106 leakages.And, in illustrated embodiment, keep pad 7 to have the 1st ring-type maintaining part 71 and the 2nd ring-type maintaining part 72, so 2 kinds of wafers that can be different with diameter are corresponding.
More than show the example that chip retaining cushion according to the present invention is applied to the carrying mechanism of lapping device, reach the conveyer that between processing unit (plant), transports wafer but chip retaining cushion of the present invention also can be used for other processing unit (plant).
Claims (5)
1. chip retaining cushion to having the device area that formed a plurality of devices on the surface and keeping around the wafer of the periphery remaining area of this device area, is characterized in that having:
Maintaining part possesses the attraction maintenance face corresponding to the ring-type of this periphery remaining area, and offers the attraction hole at this attraction maintenance face; And
Support the support portion of this maintaining part.
2. chip retaining cushion as claimed in claim 1 is characterized in that, this attraction hole is made of the connectivity slot that the attraction maintenance face along this ring-type forms.
3. as claim 1 or 2 described chip retaining cushions, it is characterized in that, be formed with the mark of the crystallization direction of expression wafer, be formed with this connectivity slot in the zone except the zone that is formed with this mark at the periphery remaining area of wafer.
4. as each the described chip retaining cushion in the claim 1 to 3, it is characterized in that this maintaining part with maintenance face of this ring-type is provided with to concentric circles a plurality of corresponding to the diameter of wafer.
5. as each the described chip retaining cushion in the claim 1 to 4, it is characterized in that, be formed with the atmosphere opening hole of inside in atmosphere of this maintaining part that makes the maintenance face that possesses this ring-type in this support portion.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP076616/2006 | 2006-03-20 | ||
| JP2006076616A JP4634949B2 (en) | 2006-03-20 | 2006-03-20 | Wafer holding pad |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101043015A true CN101043015A (en) | 2007-09-26 |
| CN100587936C CN100587936C (en) | 2010-02-03 |
Family
ID=38632177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710088734A Active CN100587936C (en) | 2006-03-20 | 2007-03-20 | Chip retaining cushion |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4634949B2 (en) |
| CN (1) | CN100587936C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102456600A (en) * | 2010-10-18 | 2012-05-16 | 株式会社迪思科 | Wafer conveying mechanism |
| CN105280539A (en) * | 2014-06-09 | 2016-01-27 | 株式会社迪思科 | Conveyance device |
| CN108039334A (en) * | 2017-12-22 | 2018-05-15 | 中国科学院上海硅酸盐研究所 | Micron order thickness wafer plummer |
| CN112276792A (en) * | 2019-07-11 | 2021-01-29 | 株式会社迪思科 | Wafer conveying mechanism and grinding device |
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| JP4836640B2 (en) * | 2006-04-14 | 2011-12-14 | 株式会社日本マイクロニクス | Prober |
| JP5261030B2 (en) * | 2008-05-29 | 2013-08-14 | リンテック株式会社 | Semiconductor wafer transfer method |
| JP5144434B2 (en) * | 2008-08-28 | 2013-02-13 | リンテック株式会社 | Support device |
| JP5164785B2 (en) * | 2008-10-23 | 2013-03-21 | リンテック株式会社 | Support device |
| JP5329916B2 (en) * | 2008-10-23 | 2013-10-30 | リンテック株式会社 | Semiconductor wafer support |
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| JP2010165883A (en) * | 2009-01-16 | 2010-07-29 | Lintec Corp | Carrying device for semiconductor wafer, and carrying method therefor |
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| JP2013055360A (en) * | 2012-12-17 | 2013-03-21 | Lintec Corp | Support device and support method |
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| JP2014204089A (en) * | 2013-04-09 | 2014-10-27 | 株式会社ディスコ | Wafer transfer mechanism and wafer processing method |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6387831U (en) * | 1986-11-26 | 1988-06-08 | ||
| JP2001024051A (en) * | 1999-07-09 | 2001-01-26 | Tokyo Seimitsu Co Ltd | Wafer vacuum chuck pad |
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2006
- 2006-03-20 JP JP2006076616A patent/JP4634949B2/en active Active
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2007
- 2007-03-20 CN CN200710088734A patent/CN100587936C/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456600A (en) * | 2010-10-18 | 2012-05-16 | 株式会社迪思科 | Wafer conveying mechanism |
| CN102456600B (en) * | 2010-10-18 | 2016-08-17 | 株式会社迪思科 | Wafer transfer mechanism |
| CN105280539A (en) * | 2014-06-09 | 2016-01-27 | 株式会社迪思科 | Conveyance device |
| CN108039334A (en) * | 2017-12-22 | 2018-05-15 | 中国科学院上海硅酸盐研究所 | Micron order thickness wafer plummer |
| CN108039334B (en) * | 2017-12-22 | 2020-05-19 | 中国科学院上海硅酸盐研究所 | Micron-sized thickness wafer bearing table |
| CN112276792A (en) * | 2019-07-11 | 2021-01-29 | 株式会社迪思科 | Wafer conveying mechanism and grinding device |
| CN112276792B (en) * | 2019-07-11 | 2024-03-12 | 株式会社迪思科 | Wafer conveying mechanism and grinding device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007258206A (en) | 2007-10-04 |
| JP4634949B2 (en) | 2011-02-16 |
| CN100587936C (en) | 2010-02-03 |
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