CN101022088A - Method for producing copper-gas dielectric suspension Damscus structure - Google Patents
Method for producing copper-gas dielectric suspension Damscus structure Download PDFInfo
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- CN101022088A CN101022088A CN 200710037776 CN200710037776A CN101022088A CN 101022088 A CN101022088 A CN 101022088A CN 200710037776 CN200710037776 CN 200710037776 CN 200710037776 A CN200710037776 A CN 200710037776A CN 101022088 A CN101022088 A CN 101022088A
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Abstract
This invention relates to a method for preparing copper-gas medium suspended Damascus structure, which applies humid etching and super-critical CO2 method to remove the sacrificial layer material and realizes the copper-air medium Damascus suspended structure, which avoids the conglutination of upper and lower structures caused by surface tensile stress of a liquid during humid etch.
Description
[technical field]
The present invention relates to make the technology field of semiconductor device, relate in particular in the semiconductor postchannel process, prepare the method for copper-gas dielectric suspension Damscus structure.
[background technology]
Along with constantly dwindling of dimensions of semiconductor devices, require more and more higher for ic manufacturing technology.For the road integrated technology of back, reduce interconnect delay (RC delay) and become a critical problem, so the medium that people constantly seek low-k replaces SiO
2, to reduce interconnection capacitance.The dielectric constant of gas medium is extremely low, by theoretical research as can be known, and at SiO
2Gas slit between the metal wire that forms in the deposition process, the reduction rate of metal line capacitance will be up to 40% in the layer, and overall line capacitance reduces by 20%.Damascus smithcraft of relevant gas medium has been to study one of focus now.
The formation method of gas medium hanging structure can be divided into two big classes at present: utilize chemical vapour deposition (CVD) SiO
2Intrinsic process characteristic form the space, and remove sacrifice layer process and obtain gas medium.Before a kind of advantage of method be to have mechanical strength preferably, but require to have the medium or the metal mainstay of certain depth-to-width ratio when forming, have higher requirement to integrated.Can produce bigger gas air gap and obtain gas medium with the removal sacrifice layer process than preceding a kind of method, though mechanical strength is not so good as preceding a kind of structure, its dielectric constant also more approaches gas dielectric constant 1.
The method of removing sacrifice layer can be divided into dry method and wet method two big classes, as everyone knows, dry etching has anisotropy preferably, but behind the process plasma bombardment, cause the damage of backing material easily, along with constantly dwindling of integrated circuit size, technology all can influence its performance to any consume of material.
For wet etching, according to the manufacturing experience of MEMS (micro electro mechanical system) (MEMS), when forming hanging structure with wet method, when two structures distance too near because the surperficial tensile stress of liquid, in dry run, easily that superstructure is drop-down, cause the adhesion of superstructure and understructure.In case form this adhesion, structure will can't be recovered forever, this is fatal to device, must prevent when wet method forms hanging structure that therefore this phenomenon from taking place.
[summary of the invention]
The object of the present invention is to provide a kind of method for preparing copper-gas dielectric suspension Damscus structure, overcome in the prior art, when removing sacrifice layer, because the superstructure that the surperficial tensile stress of liquid causes and the adhesion of understructure with wet method.
The present invention is achieved by the following technical solutions: a kind of method for preparing copper-gas dielectric suspension Damscus structure, and adopt wet etching and remove sacrificial layer material in conjunction with supercritical carbon dioxide process, realize copper-air dielectric Damascus hanging structure.
Comprise the following steps: specifically that wherein A. is coated with one deck carborundum as etching barrier layer on the bottom of structure; B. on silicon carbide layer spin coating one deck organic material as sacrifice layer; C. on described organic material layer deposit one deck carborundum as etching barrier layer; D. adopt the standard Damascus technics to form copper-organic material interconnection structure; E. on copper-organic material interconnection structure, deposit one deck carborundum etching barrier layer; F. etching is gone to the sacrifice layer hole on the silicon carbide layer on the organic material; G. dissolve the organic material of sacrifice layer with organic solution, and use washed with de-ionized water; H. further remove the organic material of sacrifice layer with supercritical carbon dioxide process, and discharge stress, form copper-gas dielectric suspension Damscus structure; I. seal and go to the sacrifice layer hole on the silicon carbide layer.
The described method for preparing copper-gas dielectric suspension Damscus structure, behind completing steps A, repeatedly repeating step B, C, D, E, F carry out step G, H, I again, can form the multilayer copper-gas dielectric suspension Damscus structure.
The described method for preparing copper-gas dielectric suspension Damscus structure before the D step, also is included in the step that embeds the silicon dioxide pillar in described organic material layer and the deposition silicon carbide layer thereon.
The described method for preparing copper-gas dielectric suspension Damscus structure, described silicon dioxide pillar be distributed in copper in copper-organic material interconnection structure around and in the organic material of the specific range of being separated by.
The described method for preparing copper-gas dielectric suspension Damscus structure, the silicon dioxide pillar of stating be distributed in copper in copper-organic material interconnection structure around the time, the width of silicon dioxide pillar should be greater than the width of the copper in copper-organic material interconnection structure.
The described method for preparing copper-gas dielectric suspension Damscus structure, in the H step, when removing the organic material of sacrifice layer with supercritical carbon dioxide process, its processing pressure should be 1070-3500psi, treatment temperature should be 32-49 ℃, and the processing time should be 50-500 second.
Described copper is equipped with-method of the unsettled damascene structure of gas medium, in the I step, adopt the plasma oxidation thing, and go to the sacrifice layer hole on the sealing silicon carbide layer.
Described copper is equipped with-method of the unsettled damascene structure of gas medium, and described plasma oxidation thing is a plasma silicon dioxide.
The present invention adopts supercritical carbon dioxide process to discharge stress when forming copper-gas dielectric suspension Damscus structure.Because the physical characteristic of supercritical carbon dioxide is between its liquids and gases, overflow from the surface than neat liquid is easier, and the surperficial tensile stress littler than liquid arranged, when therefore carrying out the release of stress by this method, can carry out drying simultaneously, form hanging structure, avoided the superstructure that in dry run, causes and the adhesion of understructure.
[description of drawings]
Fig. 1 is the flow chart of the inventive method;
Fig. 2 is the schematic diagram of spin coating organic material and deposit carborundum on the damascene structure bottom;
Fig. 3 is the schematic diagram that embeds the silicon dioxide pillar in silicon carbide layer and organic material layer;
Fig. 4 is the schematic diagram that etching forms copper damascene structure groove in the silicon dioxide pillar;
Fig. 5 is the schematic diagram that embeds the copper damascene structure in the silicon dioxide pillar;
Fig. 6 is the schematic diagram that etching is removed the sacrifice layer hole in surface carbonation silicon;
Fig. 7 is the schematic diagram of copper-gas dielectric suspension Damscus structure;
Fig. 8 is with plasma oxidation thing (SiO
2) schematic diagram that go to sacrifice layer hole of sealing on the silicon carbide layer.
[embodiment]
Below in conjunction with specific embodiments of the invention and accompanying drawing, the invention will be further described.
At first see also Fig. 1, Fig. 1 is the flow chart of the inventive method, comprises the following steps: that A. is coated with one deck carborundum as etching barrier layer on the bottom of structure; B. on silicon carbide layer spin coating one deck organic material as sacrifice layer; C. on described organic material layer deposit one deck carborundum as etching barrier layer; D. adopt the standard Damascus technics to form copper-organic material interconnection structure; E. on copper-organic material interconnection structure, deposit one deck carborundum etching barrier layer; F. etching is gone to the sacrifice layer hole on the silicon carbide layer on the organic material; G. dissolve the organic material of sacrifice layer with organic solution, and use washed with de-ionized water; H. further remove the organic material of sacrifice layer with supercritical carbon dioxide process, and discharge stress, form copper-gas dielectric suspension Damscus structure; I. seal and go to the sacrifice layer hole on the silicon carbide layer.Can draw the present invention from above step and come down to adopt wet etching and remove sacrificial layer material, realize copper-air dielectric Damascus hanging structure in conjunction with supercritical carbon dioxide process.
In one embodiment of the invention, the concrete grammar with the inventive method formation individual layer copper-gas dielectric suspension Damscus structure in turn includes the following steps:
The first step, deposit one deck carborundum on the damascene structure bottom.
Second step saw also Fig. 2, and Fig. 2 is the schematic diagram of spin coating organic material and deposit carborundum on the damascene structure bottom.Copper 3 and silicon dioxide 4 is formed bottoms, is deposited with one deck carborundum 1 on the bottom, and spin coating has one deck organic material 2 as sacrifice layer on the silicon carbide layer, on the organic material layer again deposit one deck carborundum 1 as etching barrier layer.
The 3rd step saw also Fig. 3, and Fig. 3 is the schematic diagram that embeds the silicon dioxide pillar in silicon carbide layer and organic material layer.Bottom is copper 3 and silicon dioxide 4, scribbles one deck carborundum 1 on the bottom, etches the silicon dioxide pillar window that is used to support hanging structure in surface carbonation silicon 1 and organic material layer 2.Silicon dioxide pillar window around damascene structure should be greater than the window of steel structure.Deposit silicon dioxide in the silicon dioxide window, and, form silicon dioxide pillar 5 with unnecessary silicon dioxide on chemico-mechanical polishing (CMP) the removal silicon carbide layer.
The 4th step saw also Fig. 4, and Fig. 4 is the schematic diagram that etching forms copper damascene structure groove in the silicon dioxide pillar.Bottom is copper 3 and silicon dioxide 4, scribbles one deck carborundum 1 on the bottom, etching damascene structure groove in the silicon dioxide pillar 5 that embeds in surface carbonation silicon 1 and organic material layer 2.
The 5th step saw also Fig. 5, and Fig. 5 is the schematic diagram that embeds the copper damascene structure in the silicon dioxide pillar.Bottom is copper 3 and silicon dioxide 4, scribbles one deck carborundum 1 on the bottom, in surface carbonation silicon 1 and organic material layer 2 silicon dioxide pillar 5 is arranged.Use physical gas-phase deposite method deposit diffusion impervious layer and copper seed layer in the damascene structure groove 6 in silicon dioxide pillar 5 shown in Figure 4, and in copper Damascus groove 6 shown in Figure 4, carry out copper and electroplate with galvanoplastic, removed the copper of filling out by chemico-mechanical polishing again, and polishing is to the height identical with surface carbonation silicon 1.
The 6th step saw also Fig. 6, and Fig. 6 adds to be coated with one deck carborundum etching barrier layer on the copper damascene structure of Fig. 5, and etching is removed the schematic diagram in sacrifice layer hole in surface carbonation silicon.Bottom is copper 3 and silicon dioxide 4, and one deck carborundum 1 is arranged on the bottom, and silicon dioxide pillar 5 and copper 3 are arranged in surface carbonation silicon 1 and organic material layer 2.Etching is removed the hole 7 of organic material 2 in the carborundum 1 on organic material 2.
The 7th step, structure shown in Figure 6 is put into organic solution, organic solution enters organic material layer 2 by hole 7, the dissolving organic material.After treating that organic material fully dissolves, clean the organic material of dissolving by hole 7 with deionized water.
The 8th step, the structure shown in Figure 6 that washed with de-ionized water is crossed is put into supercritical carbon dioxide, its processing pressure should be 1070-3500psi, treatment temperature should be 32-49 ℃, processing time should be 50-500 second, further cleans drying, discharge stress, form the unsettled damascene structure of copper-gas medium.See also Fig. 7, Fig. 7 is the schematic diagram of copper-gas dielectric suspension Damscus structure.Bottom is made up of copper 3 and silicon dioxide 4, and one deck carborundum 1 is arranged on the bottom, is gas medium 8 and silicon dioxide pillar 5 between surface carbonation silicon 1 and bottom carborundum 1, in the part silicon dioxide pillar copper 3 is arranged.
The 9th step saw also Fig. 8, and Fig. 8 is with plasma oxidation thing (SiO
2) schematic diagram that go to sacrifice layer hole of sealing on the silicon carbide layer.Bottom is made up of copper 3 and silicon dioxide 4, and one deck carborundum 1 is arranged on the bottom, is gas medium 8 and silicon dioxide pillar 5 between surface carbonation silicon 1 and bottom carborundum 1, in the part silicon dioxide pillar copper 3 is arranged.On surface carbonation silicon, be coated with one deck plasma oxidation thing (PECVD), the hole on the sealing surface carbonation silicon 1.
In another embodiment of the present invention, as follows with the concrete grammar of the inventive method formation multilayer copper-gas dielectric suspension Damscus structure:
Form the first step in the method for individual layer copper-gas dielectric suspension Damscus structure earlier, the number of plies according to the multilayer damascene structure repeats second step to the 6th step (promptly then, as damascene structure is the n layer, then repeat second the step to the 6th the step n time, and n is a natural number), form multiple layer of copper-organic material interconnection structure, then carry out the 7th step in the method for individual layer copper-gas dielectric suspension Damscus structure, form the multilayer copper-gas dielectric suspension Damscus structure to the 9th step.
That more than introduces only is based on several preferred embodiment of the present invention, can not limit scope of the present invention with this.Any device of the present invention is done replacement, the combination, discrete of parts well know in the art, and the invention process step is done well know in the art being equal to change or replace and all do not exceed exposure of the present invention and protection range.
Claims (9)
1, a kind of method for preparing copper-gas dielectric suspension Damscus structure is characterized in that adopting wet etching and removes sacrificial layer material in conjunction with supercritical carbon dioxide process, realizes copper-air dielectric Damascus hanging structure.
2, the method for preparing copper-gas dielectric suspension Damscus structure as claimed in claim 1 is characterized in that comprising the following steps:
A. on the bottom of structure, be coated with one deck carborundum as etching barrier layer;
B. on silicon carbide layer spin coating one deck organic material as sacrifice layer;
C. on described organic material layer deposit one deck carborundum as etching barrier layer;
D. adopt the standard Damascus technics to form copper-organic material interconnection structure;
E. on copper-organic material interconnection structure, deposit one deck carborundum etching barrier layer;
F. etching is gone to the sacrifice layer hole on the silicon carbide layer on the organic material;
G. dissolve the organic material of sacrifice layer with organic solution, and use washed with de-ionized water;
H. further remove the organic material of sacrifice layer with supercritical carbon dioxide process, and discharge stress, form copper-gas dielectric suspension Damscus structure;
1. go to the sacrifice layer hole on the sealing silicon carbide layer.
3, the method for preparing copper-gas dielectric suspension Damscus structure as claimed in claim 2, it is characterized in that: behind completing steps A, repeatedly repeating step B, C, D, E, F carry out step G, H, I again, can form the multilayer copper-gas dielectric suspension Damscus structure.
4, as claim 2 or the 3 described methods that prepare copper-gas dielectric suspension Damscus structure, it is characterized in that: before the D step, also be included in the step that embeds the silicon dioxide pillar in described organic material layer and the deposition silicon carbide layer thereon.
5, the method for preparing copper-gas dielectric suspension Damscus structure as claimed in claim 4 is characterized in that: described silicon dioxide pillar be distributed in copper in copper-organic material interconnection structure around and in the organic material of the specific range of being separated by.
6, the method for preparing copper-gas dielectric suspension Damscus structure as claimed in claim 5, it is characterized in that: described silicon dioxide pillar be distributed in copper in copper-organic material interconnection structure around the time, the width of silicon dioxide pillar should be greater than the width of the copper in copper-organic material interconnection structure.
7, as claim 2 or the 3 described methods that prepare copper-gas dielectric suspension Damscus structure, it is characterized in that: in the H step, when removing the organic material of sacrifice layer with supercritical carbon dioxide process, its processing pressure should be 1070-3500psi, treatment temperature should be 32-49 ℃, and the processing time should be 50-500 second.
8, be equipped with-method of the unsettled damascene structure of gas medium as claim 2 or 3 described coppers, it is characterized in that: in the I step, adopt the plasma oxidation thing, go to the sacrifice layer hole on the sealing silicon carbide layer.
9, copper as claimed in claim 8 is equipped with-method of the unsettled damascene structure of gas medium, and it is characterized in that: described plasma oxidation thing is a plasma silicon dioxide.
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| CN2007100377760A CN101022088B (en) | 2007-03-02 | 2007-03-02 | Method for producing copper-gas dielectric suspension Damscus structure |
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| CN2007100377760A CN101022088B (en) | 2007-03-02 | 2007-03-02 | Method for producing copper-gas dielectric suspension Damscus structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101982879A (en) * | 2010-10-15 | 2011-03-02 | 复旦大学 | Low dielectric constant medium and copper interconnection structure and integration method thereof |
| CN103474388A (en) * | 2012-06-08 | 2013-12-25 | 中芯国际集成电路制造(上海)有限公司 | Method of forming air space between grooves |
| CN103474387A (en) * | 2012-06-08 | 2013-12-25 | 中芯国际集成电路制造(上海)有限公司 | Method of forming air space between grooves |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6413852B1 (en) * | 2000-08-31 | 2002-07-02 | International Business Machines Corporation | Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material |
| US6930034B2 (en) * | 2002-12-27 | 2005-08-16 | International Business Machines Corporation | Robust ultra-low k interconnect structures using bridge-then-metallization fabrication sequence |
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2007
- 2007-03-02 CN CN2007100377760A patent/CN101022088B/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101982879A (en) * | 2010-10-15 | 2011-03-02 | 复旦大学 | Low dielectric constant medium and copper interconnection structure and integration method thereof |
| CN103474388A (en) * | 2012-06-08 | 2013-12-25 | 中芯国际集成电路制造(上海)有限公司 | Method of forming air space between grooves |
| CN103474387A (en) * | 2012-06-08 | 2013-12-25 | 中芯国际集成电路制造(上海)有限公司 | Method of forming air space between grooves |
| CN103474388B (en) * | 2012-06-08 | 2015-12-16 | 中芯国际集成电路制造(上海)有限公司 | The method of airspace is formed between groove |
| CN103474387B (en) * | 2012-06-08 | 2016-04-20 | 中芯国际集成电路制造(上海)有限公司 | The method of airspace is formed between groove |
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