CN103474388B - The method of forming an air gap between the groove - Google Patents

The method of forming an air gap between the groove Download PDF

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CN103474388B
CN103474388B CN201210187235.7A CN201210187235A CN103474388B CN 103474388 B CN103474388 B CN 103474388B CN 201210187235 A CN201210187235 A CN 201210187235A CN 103474388 B CN103474388 B CN 103474388B
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layer
copper
surface
patterned photoresist
etch stop
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CN201210187235.7A
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CN103474388A (en
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张城龙
胡敏达
张海洋
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中芯国际集成电路制造(上海)有限公司
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Abstract

本发明提供了一种沟槽间形成空气间隔的方法:预先提供一表面自下而上依次包括第一刻蚀终止层和图案化的光阻胶层的半导体衬底,图案化的光阻胶层所显露区域定义沟槽的关键尺寸;在第一刻蚀终止层和图案化的光阻胶层表面沉积超低温氧化层,并对超低温氧化层进行各向异性刻蚀,形成位于图案化光阻胶层两侧的侧壁层;去除图案化光阻胶层;沉积金属铜并进行化学机械研磨或等离子刻蚀方法使铜表面高度与侧壁层的高度齐平,形成侧壁层间隔的金属铜层;在侧壁层间隔的金属铜层表面沉积第二刻蚀终止层,并在第二刻蚀终止层表面其下方初始时具有图案化光阻胶层的位置形成通孔;去除通孔下方的金属铜层,形成沟槽间的空气间隔。 The present invention provides a method of forming an air gap between a trench-of: providing a semiconductor substrate in advance, a patterned photoresist gum comprises from bottom to top photoresist surface a first adhesive layer and the etch stop layer is patterned critical dimension defined trench region exposed layer; depositing a photoresist layer is ultra low temperature oxide etch stop layer surface of the first adhesive layer and patterned, and the ultra-low temperature oxide layer is anisotropically etched to form the patterned photoresist sidewall layers on both sides of the adhesive layer; removing the patterned photoresist paste layer; copper metal deposition and chemical mechanical polishing or plasma etching method so that the copper surface is flush with the height of the sidewall layer is formed of a sidewall spacer layer a copper layer; a metal layer on the sidewall surface of the copper layer, depositing a second spacer etch stop layer, and having below the initial position of the patterned photoresist paste layer is formed on a surface of the through hole of the second etch stop layers; removing through hole copper layer underneath, an air gap is formed between the trenches. 从而降低整个IC的RC延迟。 IC thereby reducing the overall RC delay.

Description

沟槽间形成空气间隔的方法 The method of forming an air gap between the groove

技术领域 FIELD

[0001] 本发明涉及半导体器件制造技术,特别涉及一种沟槽间形成空气间隔的方法。 [0001] The present invention relates to a semiconductor device manufacturing technology, particularly to a method of an air gap between a trench-formation.

背景技术 Background technique

[0002] 目前,在半导体器件的后段(back-end-of-1 ine,BE0L)工艺中,可根据不同需要在半导体衬底上生长多层金属互连层,每层金属互连层包括金属互连线和绝缘层,这就需要对上述绝缘层制造沟槽(trench)和连接孔,然后在上述沟槽和连接孔内沉积金属,沉积的金属即为金属互连线,一般选用铜作为金属互连线材料。 [0002] Currently, in the rear section of the semiconductor device (back-end-of-1 ine, BE0L) processes, multilayer metal interconnect layer may be grown on a semiconductor substrate according to different needs, each metal interconnect layer comprises metal interconnection line and the insulating layer, which requires producing a trench (trench) and the connecting hole of the insulating layer in the groove and then connecting hole deposit metal, the deposited metal is the metal interconnections, copper is generally used as the metal interconnect material. 绝缘层可根据制程的需要进行具体设置。 The insulating layer may be provided according to specific needs of the process. 例如包括在半导体衬底上依次形成的刻蚀终止层,例如掺氮的碳化硅层;低介电常数(Low-K)绝缘材料层,例如含有硅、氧、碳、氢元素的类似氧化物(Oxide )的黑钻石(bIackdiamond, BD)材料等。 Includes, for example etch stop layer are sequentially formed on the semiconductor substrate, for example, nitrogen-doped silicon carbide layer; low dielectric constant (Low-K) layer of insulating material, for example comprising silicon, oxygen, carbon, hydrogen, oxides of elements similar (Oxide) black diamond (bIackdiamond, BD) materials.

[0003] 现有技术中形成沟槽的方法,包括以下步骤: Method [0003] The prior art trench is formed, comprising the steps of:

[0004] 步骤011、提供一半导体衬底,所述半导体衬底表面自下而上依次包括刻蚀终止层和层间介质层,在层间介质层上涂布光阻胶(PR,Photo Resist)层,并图案化所述光阻胶层,图案化的光阻胶层所显露区域定义沟槽的关键尺寸(CD); [0004] Step 011, there is provided a semiconductor substrate, the semiconductor substrate includes, in order from bottom to top between the surface layer and the etch stop dielectric layer, the interlayer dielectric layer on a resist-coated gum (PR, Photo Resist ) layer, and patterning the photoresist layer, the adhesive layer patterned photoresist critical dimension area defining grooves (CD) exposed;

[0005] 步骤012、以图案化的光阻胶层为掩膜,干法刻蚀层间介质层,在刻蚀终止层停止刻蚀,形成沟槽。 [0005] Step 012, the adhesive layer using the photoresist pattern as a mask, dry etching inter-layer dielectric layer, etching is stopped at the etch stop layer, forming trenches. 在现有的刻蚀工艺中,一般采用等离子体刻蚀的方法形成沟槽。 In conventional etching process, plasma etching is generally employed a method of forming a trench.

[0006] 步骤013、去除图案化的光阻胶层后在沟槽内填充金属铜。 [0006] Step 013, after removing the photoresist patterned adhesive layer of copper within the trench fill metal.

[0007] 随着集成电路的不断发展,后段金属互连层的层数越来越密集,要求层间介质层具有更低的K值,虽然层间介质层采用了低介电常数绝缘材料层,但BD的介电常数为2.7〜3,因此如何进一步降低整个集成电路(IC)的电阻电容(RC)延迟,提高器件的电学性能,成为目前亟待解决的问题。 [0007] With the development of integrated circuits, the number of layers of metal interconnect layer section more intensive, the interlayer dielectric layer is required to have a lower value of K, although the interlayer dielectric layer using a low dielectric constant insulating material layer, but the dielectric constant of 2.7~3 BD, how to further reduce the entire integrated circuit (IC), resistor-capacitor (RC) delay, to improve the electrical performance of the device, a problem to be solved at present.

发明内容 SUMMARY

[0008] 有鉴于此,本发明解决的技术问题是:降低整个IC的RC延迟。 [0008] Accordingly, the present invention is to solve the technical problem: IC reduce overall RC delay.

[0009] 为解决上述技术问题,本发明的技术方案具体是这样实现的: [0009] To solve the above problems, a specific aspect of the present invention is implemented as follows:

[0010] 本发明提供了一种沟槽间形成空气间隔的方法,应用于半导体器件的后段工艺中,该方法包括: [0010] The present invention provides a method of forming an air gap between a trench-of-stage process is applied to a semiconductor device, the method comprising:

[0011] 预先提供一半导体衬底,所述半导体衬底表面自下而上依次包括第一刻蚀终止层和图案化的光阻胶层,图案化的光阻胶层所显露区域定义沟槽的关键尺寸; [0011] providing a semiconductor substrate in advance, the semiconductor substrate includes, in order from bottom to top photoresist surface a first adhesive layer and the patterned etch stop layer, the subbing layer of the patterned photoresist exposed area defining trenches critical dimension;

[0012] 在第一刻蚀终止层和图案化的光阻胶层表面沉积超低温氧化层,并对所述超低温氧化层进行各向异性刻蚀,形成位于图案化光阻胶层两侧的侧壁层; [0012] The low temperature oxide layer is deposited over the photoresist etch stop layer surface of the first adhesive layer and patterned, and the ultra-low temperature oxide layer is anisotropically etched to form patterned photoresist side of the gel layer on both sides parietal;

[0013] 去除图案化光阻胶层; [0013] removing the patterned photoresist paste layer;

[0014] 沉积金属铜并进行化学机械研磨或等离子刻蚀方法使铜表面高度与侧壁层的高度齐平,形成侧壁层间隔的金属铜层; [0014] Copper is deposited and a chemical mechanical polishing method or plasma etching of the copper surface is flush with the height of the sidewall layer, a metal layer, the sidewall spacer of the copper layer;

[0015] 在侧壁层间隔的金属铜层表面沉积第二刻蚀终止层,并在第二刻蚀终止层表面其下方初始时具有图案化光阻胶层的位置形成通孔; [0015] depositing a second etch stop layer on the surface layer of the metal copper layer sidewall spaced positions and having a subbing layer of patterned photoresist on the initial surface of the second etch stop layer thereunder forming a through hole;

[0016] 去除通孔下方的金属铜层,形成沟槽间的空气间隔。 [0016] removing the metal layer below the copper through-holes, forming an air gap between the trenches.

[0017] 去除通孔下方的金属铜层采用湿法刻蚀的方法在包含酸溶液和双氧水的溶液中进行。 [0017] The wet etching method for removing copper metal layer below the through-holes in a solution containing hydrogen peroxide in an acid solution and.

[0018] 所述酸溶液为盐酸、硫酸、硝酸、磷酸、氢氟酸或其它酸性溶液中的一种或几种的混合液。 [0018] The acid solution is hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, hydrofluoric acid or a mixture of one or more other acid solution.

[0019] 去除图案化光阻胶层的方法包括氧气灰化的方法或者含氧离子体刻蚀的方法或者湿法刻蚀的方法。 [0019] The method of removing the patterned photoresist subbing layer comprises an oxygen ashing method or an oxygen-containing plasma etching method or a wet etching method.

[0020] 所述超低温氧化层的形成温度低于100摄氏度。 The [0020] cryogenic temperature oxide layer is formed is less than 100 degrees Celsius.

[0021] 形成沟槽间的空气间隔之后,该方法进一步包括形成下层的层间介质层。 After [0021] forming an air gap between the trench, the method further comprises forming a lower interlayer dielectric layer.

[0022] 所述层间介质层的介电常数为2〜7。 [0022] The dielectric constant of the interlayer dielectric layer is 2~7.

[0023] 所述层间介质层为碳氧化娃S1C层、二氧化娃S1jg、氢氧化娃层、氮化娃层、碳氮化硅SiNC层中的一种或者几种的任意组合。 [0023] The interlayer dielectric oxide layer is a carbon layer S1C baby, baby dioxide S1jg, baby hydroxide layer, a nitride layer baby, SiNC a carbon-silicon layer, or any combination of several.

[0024] 由上述的技术方案可见,在侧壁层之间形成金属铜层,该金属铜层包括沟槽内的金属铜层,也包括后续需要去除形成空气间隔的金属铜层。 [0024] seen from the above technical solution, a copper layer is formed between the sidewall of the metal layer, the metal layer comprises a copper layer of copper within the trench, including the subsequent need to remove the copper metal layer is formed of an air gap. 通过通孔显露出来的金属铜层浸入在包含酸溶液和双氧水的溶液中,进行湿法刻蚀,将这部分铜溶解掉,在沟槽间形成空气间隔,空气间隔替代了现有技术的层间介质层,从而达到了降低整个IC的RC延迟的目的。 Exposed by the via metal layer of copper is immersed in a solution containing an acid and a hydrogen peroxide solution, the wet etching, these portions of the copper dissolved away to form an air gap between the trenches, the layer of air space replace prior art interlayer dielectric layer, so as to achieve the purpose of reducing the overall IC RC delay. 而且,本发明采用了不同于现有技术刻蚀层间介质层形成沟槽的方法,而是曝光显影光阻胶层,定义沟槽的CD,这样形成的沟槽不存在刻蚀层间介质层的过程,因此沟槽具有较高的特征尺寸均匀性。 Further, the present invention uses a different approach from the prior art inter-layer dielectric layer is etched trenches, but is exposed and developed photoresist layer, define the CD trench, the trench thus formed etching the dielectric layer is not present process layer, and therefore a high uniformity of the grooves having a feature size.

附图说明 BRIEF DESCRIPTION

[0025] 图1为本发明实施例沟槽间形成空气间隔的方法的流程示意图。 [0025] FIG 1 a schematic flowchart of a method embodiment of an air gap between groove formed embodiment of the present invention.

[0026]图2a至图2f为本发明实施例沟槽间形成空气间隔的方法的具体剖面示意图。 Specific methods schematic cross-sectional view of an air gap between the groove formed in Example Embodiment [0026] Figures 2a to 2f of the present invention.

[0027] 图2g为本发明实施例在当层金属互连层表面沉积有下层层间介质层的剖面结构示意图。 Example [0027] FIG. 2g of the present invention when deposited on the surface layer of the metal interconnection layer is a schematic cross-sectional structure of a dielectric layer between the layers.

具体实施方式 Detailed ways

[0028] 为使本发明的目的、技术方案、及优点更加清楚明白,以下参照附图并举实施例,对本发明进一步详细说明。 [0028] The object of the present invention, the technical solution and merits thereof more apparent, with reference to the accompanying drawings and the following embodiments, the present invention is further described in detail.

[0029] 本发明利用示意图进行了详细描述,在详述本发明实施例时,为了便于说明,表示结构的示意图会不依一般比例作局部放大,不应以此作为对本发明的限定,此外,在实际的制作中,应包含长度、宽度及深度的三维空间尺寸。 [0029] The present invention is described in detail using the schematic, when the detailed embodiments of the present invention, for convenience of explanation diagram showing the configuration of the usual scale will be enlarged, not as a limitation on the present invention, in addition, actual production, should be included three spatial dimensions of length, width and depth.

[0030] 本发明的核心思想是:在侧壁层之间形成金属铜层,该金属铜层包括沟槽内的金属铜层,也包括后续需要去除形成空气间隔的金属铜层。 [0030] The core idea of ​​the invention is: a copper layer is formed between the sidewalls of the metal layer, the metal layer comprises a copper layer of copper within the trench, including the subsequent need to remove the copper metal layer is formed of an air gap. 通过通孔显露出来的金属铜层浸入在包含酸溶液和双氧水的溶液中,进行湿法刻蚀,将这部分铜溶解掉,在沟槽间形成空气间隔,空气间隔替代了现有技术的层间介质层,从而达到了降低整个IC的RC延迟的目的。 Exposed by the via metal layer of copper is immersed in a solution containing an acid and a hydrogen peroxide solution, the wet etching, these portions of the copper dissolved away to form an air gap between the trenches, the layer of air space replace prior art interlayer dielectric layer, so as to achieve the purpose of reducing the overall IC RC delay. 而且,本发明采用了不同于现有技术刻蚀层间介质层形成沟槽的方法,而是曝光显影光阻胶层,定义沟槽的CD,这样形成的沟槽不存在刻蚀层间介质层的过程,因此沟槽具有较高的特征尺寸均匀性。 Further, the present invention uses a different approach from the prior art inter-layer dielectric layer is etched trenches, but is exposed and developed photoresist layer, define the CD trench, the trench thus formed etching the dielectric layer is not present process layer, and therefore a high uniformity of the grooves having a feature size.

[0031] 本发明实施例沟槽间形成空气间隔的方法,其流程示意图如图1所示,包括以下步骤,下面结合图2a至图2f,进行详细说明。 Embodiment [0031] The method of the present invention, an air gap is formed between the trench embodiment, the process schematic shown in Figure 1, comprising the steps below in conjunction with FIGS. 2a to FIG. 2F, be described in detail.

[0032] 步骤11、请参阅图2a,预先提供一半导体衬底100,所述半导体衬底100表面自下而上依次包括第一刻蚀终止层101和图案化的光阻胶层102,图案化的光阻胶层102所显露区域定义沟槽的关键尺寸; [0032] Step 11, see Figure 2a, a semiconductor substrate 100 previously provided, the semiconductor substrate 100 includes, in order from bottom to top surface 101 and a first patterned adhesive layer 102 etch stop layer of photoresist, pattern area defining a critical dimension of the trench 102 exposed adhesive layer of photoresist;

[0033] 步骤12、请参阅图2b,在第一刻蚀终止层101和图案化的光阻胶层102表面沉积超低温氧化层,并对所述超低温氧化层进行各向异性刻蚀,形成位于图案化光阻胶层两侧的侧壁层103 ; [0033] Step 12, refer to Figure 2b, an oxide layer is deposited on the cryogenic surface of the photoresist 102 and the patterned adhesive layer 101 of the first etch stop layer, and the ultra-low temperature oxide layer is anisotropically etched to form located subbing layer on both sides of the side walls resist patterned layer 103;

[0034] 超低温氧化层为低温氧化层(Low Temperature Oxide,LT0)的一种,之所以选择超低温氧化层作为光阻胶的侧壁层,是因为超低温氧化层的形成温度低于100摄氏度,低于光阻胶的熔化温度,不至于在形成侧壁层的过程中,改变光阻胶层的形貌。 [0034] The ultra-low temperature oxide layer is a low temperature oxide layer (Low Temperature Oxide, LT0) one was chosen as an ultra-low temperature oxide layer resist sidewall rubber layer is formed as a cryogenic temperature oxide layer is less than 100 degrees C, low the melting temperature of the photoresist gum will not form a side wall in the process layer, changing the topography of the adhesive layer resist.

[0035] 步骤13、请参阅图2c,去除图案化光阻胶层102 ; [0035] Step 13, see 2c, the adhesive layer 102 patterned photoresist is removed;

[0036] 去除图案化光阻胶层的方法包括氧气灰化的方法或者含氧离子体刻蚀的方法或者湿法刻蚀的方法。 [0036] The method of removing the patterned photoresist subbing layer comprises an oxygen ashing method or an oxygen-containing plasma etching method or a wet etching method.

[0037] 步骤14、请参阅图2d,沉积金属铜并进行化学机械研磨或等离子刻蚀方法使铜表面高度与侧壁层的高度齐平,形成侧壁层间隔的金属铜层104 ; [0037] Step 14, see Figure 2d, copper metal is deposited and a chemical mechanical polishing method or plasma etching the surface of the sidewall height is flush with the copper layer, the copper layer 104 to form a metal layer spaced apart sidewalls;

[0038] 步骤15、请参阅图2e,在侧壁层间隔的金属铜层104表面沉积第二刻蚀终止层105,并在第二刻蚀终止层表面其下方初始时具有图案化光阻胶层的位置形成通孔106 ; [0038] Step 15, see FIG. 2E, a second etch stop layer 105 is deposited 104 on the surface of the metal layer is a copper layer sidewall spacer and below the initial gel having the patterned photoresist surface of the second etch stop layer position of the layer 106 is formed a through hole;

[0039] 其中,每个初始时具有图案化光阻胶层的位置形成通孔的数量不限,图2e中只示出一个通孔。 [0039] wherein, each location having a limited number of patterned photoresist initial gel layer through hole is formed, FIG. 2e shows only one through-hole. 通孔宽度也不限定,不至于后续沉积的层间介质层坍塌到空气间隔中即可。 The width of the through-hole is not limited, and will not subsequently deposited between the interlayer dielectric layer can be collapsed into the air gap. 第二刻蚀终止层105—般为碳化硅,氮化硅,碳氮硅层中的一种或者几种的组合。 The second etch stop layer are combined as a carbide, silicon nitride, silicon carbonitride or several layers of 105- like. 形成通孔的过程一般是在第二刻蚀终止层105表面涂布光阻胶,通过图案化光阻胶定义通孔的尺寸和位置,然后以该图案化光阻胶为掩膜,刻蚀第二刻蚀终止层105,从而在第二刻蚀终止层105上形成通孔。 The process of forming the through hole 105 is typically applied to the surface of the second etch stop layer of photoresist glue, by patterning the photoresist gum define the size and position of the through hole, and then the patterned photoresist as a mask of plastic, etching the second etch stop layer 105, thereby forming a through hole in the second etch stop layer 105.

[0040] 步骤16、请参阅图2f,去除通孔106下方的金属铜层,形成沟槽间的空气间隔107。 [0040] Step 16, see FIG. 2F, the copper metal layer is removed below the through hole 106 to form an air gap 107 between the trenches.

[0041] 该步骤是本发明的关键,因为通孔能够将金属铜层显露出来,其他位置的金属铜层被第二刻蚀终止层覆盖,所以将具有该结构的器件浸入包含酸溶液和双氧水的溶液中,对通过通孔显露出来的金属铜层进行湿法刻蚀。 [0041] This step is critical to the invention, since the through hole can be exposed metallic copper layer, another metal layer of copper is a second position covering the etch stop layer, so that the hydrogen peroxide solution and an acid having the structure of the device is immersed comprising solution of revealed by the via metal layer is a copper wet etching. 所述酸溶液可以为盐酸、硫酸、硝酸、磷酸、氢氟酸或其它酸性溶液中的一种或几种的混合液,或者其他可以结合双氧水与金属铜进行反应,溶解铜的物质。 The acid solution may be a mixture of one or more of hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, hydrofluoric acid or other acidic solution, or other substances may be combined with the hydrogen peroxide reacting metallic copper, copper dissolution.

[0042] 其中,以酸溶液为盐酸为例,进行反应的化学方程式为: [0042] wherein the acid solution is hydrochloric acid, for example, the reaction of chemical equation:

[0043] H202+2 (HCl) +Cu=CuC12+2 (H2O)。 [0043] H202 + 2 (HCl) + Cu = CuC12 + 2 (H2O).

[0044] 这样,沟槽内的金属铜仍然保留,而在沟槽之间形成空气间隔。 [0044] Thus, the copper in the trench remain, an air gap is formed between the trenches.

[0045] 至此,本发明实施例实现了沟槽间形成空气间隔的方法。 [0045] Thus, the embodiment implements a method of forming an air gap between the grooves of the present invention.

[0046] 进一步地,本发明实施例还可以包括步骤17、请参阅图2g,沉积下层的层间介质层108。 [0046] Further, embodiments of the present invention may further comprise the step 17, see Figure 2g, deposition of the interlayer dielectric layer 108 is lower. 本领域技术人员可以知道,在下层的层间介质层上可以制作沟槽和连接孔,连接孔会与金属铜层104电性连接,在此不再赘述。 Those skilled in the art know, on the interlayer dielectric layer can be made lower trenches and holes, the connecting hole 104 will be electrically connected to the metal layer is copper, are not repeated here. 层间介质层108的介电常数为2〜7,可以为碳氧化娃(S1C)层、二氧化娃(S12)层、氢氧化娃层、氮化娃层或碳氮化娃(SiNC)层中的一种或几种的任意组合。 The dielectric constant of the interlayer dielectric layer 108 is 2~7 can (S1C) oxycarbide layer baby, baby dioxide (S12) layer, a baby hydroxide layer, a nitride layer or carbonitride baby doll (SiNC) layer any combination of one or more.

[0047] 目前,特征尺寸均勾性(Critical Dimens1n Uniform,(DU)是半导体器件制造工艺中需要考察的重要指标。通常,在半导体制造工艺中,刻蚀偏移量(etch bias)等于显影后检测(After Development Inspect1n,ADI)的特征尺寸减去刻蚀后检测(After EtchInspect1n,ΑΕΙ)的特征尺寸。在晶圆中存在若干个芯片单元(Die),每个芯片单元中存在若干个单线(Iso)和密线(Dense)。从单线处到密线处,沟槽与沟槽之间的间距是逐渐减小的。ADI的特征尺寸是指量测曝光显影后PR的中间位置尺寸,AEI的特征尺寸是指量测刻蚀后的沟槽的底部位置尺寸。Iso和Dense的刻蚀偏移量越接近,则说明其特征尺寸均匀性越高,也表现为Iso和Dense沟槽尺寸平均值越接近。现有技术形成沟槽时,需要长时间刻蚀层间介质层,而Iso和Dense的刻蚀速率不同,导致Iso和Dense的AEI差异就越大,因此etch bias就越大,最终导致 [0047] Currently, the average feature size of the hook (Critical Dimens1n Uniform resistance, (DU) is an important indicator of a semiconductor device manufacturing process need to look at. Generally, in a semiconductor manufacturing process, the etching shift amount (etch bias) equal after development detecting a characteristic dimension (after Development Inspect1n, ADI) obtained by subtracting the detection etching (after EtchInspect1n, ΑΕΙ) feature size. there are several chip unit (die) in a wafer, each chip there are several cell-line ( Iso) and the dense (dense). dense from the singlet to the line, the spacing between the grooves and the grooves are gradually decreased feature sizes .ADI size refers to an intermediate position measured after exposure and development of the PR, the AEI refers to a characteristic dimension of the trench bottom etching the measuring position and size .Iso Dense etching offset closer, then the higher the size uniformity characterized in also represents the average channel dimensions and the Iso Dense the closer. when the prior art forming the trench, the etch time required inter-layer dielectric layer, Iso and Dense different etch rate, resulting in differences in Iso and Dense AEI greater, so the greater the etch bias, eventually lead 槽的CDU比较差。而本发明的方法不涉及刻蚀层间介质层,在步骤11中,曝光显影形成图案化的光阻胶层102将沟槽的宽度和高度都定义出来,在Iso和Dense处得到的沟槽尺寸基本没有差异,因此沟槽的⑶U也就越高。 CDU groove poor. The method of the present invention does not relate to etching the interlayer dielectric layer, in step 11, a patterned adhesive layer 102 is exposed and developed to form a photoresist trench width and height are defined out in Iso and Dense substantially no difference in size of the resulting groove, and therefore the higher the trench ⑶U.

[0048] 以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明保护的范围之内。 [0048] The foregoing is only preferred embodiments of the present invention but are not intended to limit the present invention, all within the spirit and principle of the present invention, any changes made, equivalent substitutions and improvements should be included within the scope of protection of the present invention.

Claims (7)

1.一种沟槽间形成空气间隔的方法,应用于半导体器件的后段工艺中,该方法包括: 预先提供一半导体衬底,所述半导体衬底表面自下而上依次包括第一刻蚀终止层和采用曝光、显影的工艺图案化的光阻胶层,图案化的光阻胶层所显露区域定义沟槽的关键尺寸; 在第一刻蚀终止层和图案化的光阻胶层表面沉积超低温氧化层,并对所述超低温氧化层进行各向异性刻蚀,形成位于图案化光阻胶层两侧的侧壁层;所述超低温氧化层的形成温度低于100摄氏度; 去除图案化光阻胶层; 沉积金属铜并进行化学机械研磨或等离子刻蚀方法使铜表面高度与侧壁层的高度齐平,形成侧壁层间隔的金属铜层; 在侧壁层间隔的金属铜层表面沉积第二刻蚀终止层,并在第二刻蚀终止层表面其下方初始时具有图案化光阻胶层的位置形成通孔; 去除通孔下方的金属铜层,形成 The method of an air gap between the groove A is formed, it applied to the rear stage process of the semiconductor device, the method comprising: providing a semiconductor substrate in advance, in this order from the semiconductor substrate surface comprising a first etched and a stop layer using exposure and development processes of the patterned photoresist layer, the adhesive layer patterned photoresist critical dimension defined trench region revealed; a first adhesive layer on the photoresist etch stop layer and the patterned surface ultra-low temperature oxide layer is deposited, the ultra-low temperature oxide layer and anisotropically etched to form sidewalls of the patterned photoresist layer on both sides of the adhesive layer; the ultra-low temperature oxide layer is formed a temperature below 100 degrees Celsius; removing the patterned photoresist paste layer; depositing copper metal and chemical mechanical polishing or plasma etching method so that the copper surface is flush with the height of the sidewall layer, a metal layer, a copper layer sidewall spacer; a copper layer on the sidewall of the spacer layer depositing a second etch stop layer surface, and having below the initial position of the patterned photoresist paste layer is formed on a surface of the through hole of the second etch stop layers; removing the copper layer below the through-hole is formed 槽间的空气间隔。 An air space between the grooves.
2.如权利要求1所述的方法,其特征在于,去除通孔下方的金属铜层采用湿法刻蚀的方法在包含酸溶液和双氧水的溶液中进行。 2. The method according to claim 1, characterized in that the method of removing the metallic copper layer below the through hole is performed by a wet etching in a solution containing hydrogen peroxide in an acid solution and.
3.如权利要求2所述的方法,其特征在于,所述酸溶液为盐酸、硫酸、硝酸、磷酸、氢氟酸中的一种或几种的混合液。 The method according to claim 2, wherein the acid solution is hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, hydrofluoric acid or a mixture of several.
4.如权利要求3所述的方法,其特征在于,去除图案化光阻胶层的方法包括氧气灰化的方法或者含氧离子体刻蚀的方法或者湿法刻蚀的方法。 4. The method according to claim 3, characterized in that the method of removing the patterned photoresist methods subbing layer comprises an oxygen ashing process or an oxygen-containing plasma etching or wet etching.
5.如权利要求1所述的方法,其特征在于,形成沟槽间的空气间隔之后,该方法进一步包括形成下层的层间介质层。 After 5. The method according to claim 1, characterized in that, to form an air gap between the trenches, the method further comprises forming a lower interlayer dielectric layer.
6.如权利要求5所述的方法,其特征在于,所述层间介质层的介电常数为2〜7。 6. The method according to claim 5, wherein the dielectric constant of the interlayer dielectric layer is 2~7.
7.如权利要求6所述的方法,其特征在于,所述层间介质层为碳氧化硅层、二氧化硅层、氢氧化硅层、氮化硅层或碳氮化硅层中的一种或者几种的任意组合。 7. The method according to claim 6, wherein the interlayer dielectric layer is a silicon oxycarbide layer, a layer of silicon dioxide, silicon hydroxide, silicon nitride or a carbon nitride layer is a or any combination of several kinds.
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