CN101021617A - Piezoelectric thick diaphragm driving micro deformable mirror and producing method thereof - Google Patents
Piezoelectric thick diaphragm driving micro deformable mirror and producing method thereof Download PDFInfo
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Abstract
The invention belongs to a microdeformable mirror and the machining and preparing field thereof, concretely relating to a piezoelectric film drive-based microdeformable mirror and the preparing method thereof. And the mcirodeformable mirror comprises micro actuator array composed of actuating units and mirror surface, where the micro actuator array is of a centrosymmetric regular hexagonal structure and the mirror composed of monocrystalline silicon diaphragm is connected with upper electrodes through photosensitive high polymer boss; the preparing course comprises: preparing silicon substrate piezoelectric ceramic base film, using wet-etching process to etch the silicon substrate piezoelectric ceramic base film, using wet-etching process to etch silicon substrate piezoelectric ceramic thick film shape, preparing upper electrode array on the silicon substrate piezoelectric ceramic thick film array, and preparing connection boss on the upper surface of the upper electrode array and using photosensitive high polymer to fix the mirror surface on the actuator array. And the microdeformable mirror can drive the mirror to generate larger displacement so as to meet the requirements of the fields of astro-observation, amotio imaging, etc; and the preparing method has simple process, low cost and good commercial application prospect.
Description
Technical field:
The invention belongs to micro deformable mirror and processing and preparing field thereof, be specifically related to a kind of micro deformable mirror that drives based on piezoelectric film and preparation method thereof.
Background technology:
Distorting lens is a kind of new optical devices that can be used on fields such as carrying out light path wavefront distortion correction, the identification of enemy and we's photoelectricity in the optical system, in dual-use two markets good prospects for application is arranged all.When distorting lens is used for human eye retina's imaging, can correction time and the space on living human eye aberrations of random variation all, to obtain high resolution vision cell image near diffraction limit, thereby realize having a strong impact on human eyesight and blinding disease (such as eyeground self pathologies such as retinal vascular disease, macula lutea disease, detachment of retinas, and whole body such as hypertension, artery sclerosis, diabetes is diseases related) more early diagnosis, help doctor and patient in time to treat, reduce the risk that the patient loses one's sight.In addition, can compensate the wavefront distortion that atmospheric disturbance causes when distorting lens is used for the ground astronomical telescope, thereby make the resolution of observation celestial body reach diffraction limit.
Research at present based on the micromechanics distorting lens of micro-processing technology mainly based on static and two kinds of type of drive of piezoelectricity.2006, a kind of static driven distorting lens processing technology (" preparation of MEMS continuous film micro deformable mirror ", Proc.of SPIE, Vol.6306, pp630606-11,2006) that declines was disclosed in the collection of thesis that SPIE delivers.Owing to the existence of static driven PULL-IN phenomenon, make its effective displacement generally be no more than 2 microns in this micro deformable mirror; And because the minute surface unrelieved stress of sacrifice layer process preparation is bigger, cause minute surface big initial deformation to occur, have a strong impact on the wavefront correction performance of distorting lens; In addition, the operating voltage height of static driven micro deformable mirror (generally greater than 150V) therefore, causes system integration difficulty.In October, 2006, the micro deformable mirror (Journal of MEMS, Vol.15, pp1214-1224,2006) that a kind of piezoelectric membrane drives has been studied successfully in the jet propulsion laboratory by the report U.S. in U.S.'s " MEMS (micro electro mechanical system) magazine ".Such distorting lens utilizes the piezoelectric membrane array of actuators to drive surface deformation, the high defective of operating voltage of having avoided static driven formula distorting lens to exist, but because its piezoelectric membrane is by gel-gel method preparation, its complicated process of preparation, stability and repeatability are relatively poor, commercial applications is very much a difficulty, and a little less than the piezoelectric membrane driving force, cause the effective displacement of minute surface little (generally being no more than 2 microns), can not satisfy special user's needs, for example all require its effective deformation amount at the 5-10 micron usually to the micromechanics distorting lens that is used for fields such as astronomical sight and retina image-forming, in addition higher.And, though its minute surface adopts the soi wafer preparation, having overcome the big deficiency of minute surface initial deformation that exists in the static driven formula distorting lens, soi wafer costs an arm and a leg, and corresponding process equipment requirement is high, therefore prepares this type of minute surface cost height.Simultaneously, fix with the metal boss between minute surface in such distorting lens and the array of actuators, need under high vacuum, carry out both fixing operations usually, higher to equipment requirements.In addition,, thereby make the decoupling algorithm of control mirror shape complicated more, be unfavorable for the decoupling zero control and the Optimal Control of mirror shape because adjacent piezoelectric membrane actuating unit constitutes the square structure.
Summary of the invention:
The objective of the invention is to, overcome deficiency of the prior art, a kind of micro deformable mirror that drives based on piezoelectric thick and preparation method thereof is provided.
Purpose of the present invention realizes in the following manner.
The micro deformable mirror that piezoelectric thick of the present invention drives, comprise micro-actuator array and the minute surface formed by actuating unit, actuating unit wherein by silicon substrate, have a upper/lower electrode piezoelectric ceramic film be connected boss and form, be provided with and the corresponding hole of piezoelectric ceramics rete at the silicon substrate back side, it is characterized in that described micro-actuator array is centrosymmetric regular hexagon structure; The thickness of described piezoelectric ceramics rete is the 10-50 micron; Described minute surface is that thickness is the monocrystalline silicon diaphragm of 20-50 micron thickness, and perhaps the upper surface at the monocrystalline silicon diaphragm adds the plating reflection horizon; Described minute surface is connected with top electrode by the connection boss that photosensitive polymer constitutes.
The preparation method of the micro deformable mirror that piezoelectric film of the present invention drives is characterized in that its preparation process comprises:
1) the piezoelectric ceramics substrate that will have a bottom electrode with routine techniques is cured on the silicon substrate of being made up of elastic layer and supporting layer, obtains silicon substrate piezoelectric ceramics basement membrane.Its concrete operations step is: earlier epoxy glue evenly is coated onto on piezoelectric ceramics substrate or the substrate silicon with spin coating or method for printing screen, its global shape satisfies the needs that constitute the micro-actuator array, and the thickness of the epoxy adhesive layer that is coated with is the 3-10 micron; Under the pressure of 0.1-1MPa, both are fitted then, and epoxy glue is solidified, obtain silicon substrate piezoelectric ceramics basement membrane by Technology for Heating Processing (100-180 ℃ is incubated 1-3 hour).Wherein, described piezoelectric ceramics substrate is that thickness is 100-200 micron, horizontal d
31Piezoelectric modulus is greater than the piezoelectric ceramic body material of 100pmN, PZT-5H for example, PMN-PT etc.; Described curing materials is a kind of epoxy glue that does not contain adjuvant, for example, and the E-7 epoxy glue of Shanghai synthetic resin research institute, the ZKEP-4530 epoxy glue of Beijing Bo Mi company etc.
2) utilize the wet etching method etch silicon substrate piezoelectric ceramics basement membrane of immersion mode, make the piezoceramics layer reduced thickness, obtain silicon substrate piezoelectric ceramics thick film to the 10-50 micron.Its concrete operations step is: piezoelectric ceramic film is immersed in the piezoelectric ceramics etching liquid etching 10-30 minute; In 40-80 ℃ distilled water, soaked 10-30 minute then, remove the chemical residue that produces in the etching process; Repeat this process, meet the demands, obtain silicon substrate piezoelectric ceramics thick film up to thicknesses of layers.
3) with wet etching method etch silicon substrate piezoelectric ceramics thick film, make its shape satisfy the array of actuators requirement.Its concrete operations step is: prepare the photoresist mask according to the array of actuators shape set earlier on the piezoelectric ceramics thick film; Remove redundance to bottom electrode with piezoelectric ceramics etching liquid etching then, make silicon substrate piezoelectric ceramics thick film array; Described wet etching method is immersed method etching of the prior art or atomization etching, and described array of actuators is centrosymmetric regular hexagon structure.
4) preparation top electrode array on above-mentioned silicon substrate piezoelectric ceramics thick film array.Its concrete operations step is: earlier on the piezoelectric ceramics thick film with sputter or vacuum evaporation method conductive metal deposition layer, on metal level, prepare the photoresist mask then, utilize again the lithographic method of routines such as ion beam etching, chemical etching remove unnecessary place metal level, make and the corresponding top electrode array of piezoelectric ceramics thick film array, described conductive metal layer metal is the high metal of electrical conductivity religion, for example gold, silver, copper, aluminium, titanium etc.
5) the upper surface preparation at above-mentioned top electrode array connects boss.Its concrete operations step is: at the upper surface spin coating photosensitive polymer layer of top electrode array, and use photoetching process to remove unnecessary photosensitive polymer, be prepared into the photosensitive polymer boss, the boss height is the 10-50 micron.
6) preparation minute surface.Its concrete operations step is: with wet etching method is the monocrystalline silicon piece attenuate of 300-400 micron with thickness, preparing thickness is the monocrystalline silicon diaphragm of 20-50 micron, and with sputter or vacuum evaporation method plating reflection horizon on this monocrystalline silicon diaphragm surface, make the monocrystalline silicon membrane minute surface, thickness of coating is the 0.1-1 micron; Described etching liquid is KOH solution or TMAH solution etc.; Described metallic reflector metal is the high metal of reflectivity, for example gold, aluminium etc.
7) utilize photosensitive polymer that minute surface is fixedly installed on the array of actuators, and form and the corresponding hole of piezoelectric ceramics thick film layers by the deep reaction ion etching method from substrate back, the axis in hole is identical with the connection boss, and the aperture is slightly larger than piezoelectric ceramics thick film footpath, and the degree of depth equals supporting layer thickness.Introduce electric wire at last again, encapsulate finished product.
In above-mentioned preparation process, described photosensitive polymer is the AZ9200 series of Azresist company or the SU8 series of Microchem company etc., described photoresist is the S1800 series of Shipley company or the BP218 series of Beijing Inst. of Chemical Reagent etc., and the described coat of metal is gold or aluminium.
The micro deformable mirror that piezoelectric thick of the present invention drives, compare with static of the prior art or piezoelectric membrane micro deformable mirror, has following outstanding advantage: 1. because piezoelectric film thickness reaches the 10-50 micron, driving force is big, can drive the bigger minute surface of rigidity and produce bigger displacement (under the 55V operating voltage, can produce 10 microns minute surface displacement), overcome the little deficiency of micro deformable mirror displacement that static and piezoelectric membrane drive; Can satisfy of the request for utilization of fields such as astronomical sight and retina image-forming to deflection; 2. piezoelectric thick is to make by piezoelectric ceramics matrix material wet method attenuate, overcome the deficiency that colloidal sol-gel method prepares complicated process of preparation, stability and poor repeatability that piezoelectric membrane causes, therefore piezoelectric property is stable, and good reproducibility helps commercial applications; 3. minute surface is to be prepared by the common monocrystalline silicon piece of wet etching method attenuate, has avoided the use of expensive soi wafer and advanced process equipment, and the big deficiency of minute surface initial deformation of sacrifice layer process preparation; 4. minute surface and piezoelectric thick array of actuators fix by photosensitive polymer, have overcome the fixing deficiency high to equipment requirements of metal boss, and photosensitive polymer constant intensity height, good stability, technology are simple.5. constitute centrosymmetric regular hexagon structure between the adjacent actuators unit, thereby make that the influence function between the adjacent actuators unit is identical, avoided the decoupling zero of the mirror shape that the square structure caused to control deficiencies such as complicated, that the decoupling algorithm elapsed time is many.
Therefore, the micromechanics distorting lens that the piezoelectric thick that utilizes the present invention to prepare drives, the minute surface displacement is bigger, every stable performance, and process for integrally manufacturing is simple, cost is low, has good commercial application prospect.
Description of drawings
Be described further below by accompanying drawing and example.
Fig. 1 is a kind of example structure synoptic diagram that the piezoelectric thick that is made of 7 actuating units of the present invention drives micro deformable mirror.
Fig. 2 has the piezoelectric thick driving micro deformable mirror that 37 actuating units constitute, wherein the micro-actuator array position distribution schematic diagram of actuating unit formation.
Fig. 3 carries out the displacement curve figure that different voltage testers obtain to piezo-activator of the present invention unit.
Figure 4 shows that the deflection distribution plan of piezo-activator of the present invention unit at 25V driven lower edge center line.
Referring to Fig. 1, Fig. 1 .1 is the outline drawing that described piezoelectric thick drives micro deformable mirror, and Fig. 1 .2 is that the A-A of Fig. 1 .1 analyses and observe Figure, Fig. 1 .3 is the upward view of Fig. 1 .1. Among the figure, it is little that silicon substrate 1 is provided with the regular hexagon that is made of seven actuating units Array of actuators. Each actuating unit comprises circular boss 6, top electrode 5 and the circular piezoelectric ceramic thick film 4 of connecting, wherein, Top electrode 5 is to be deposited on conductive metal layer on the piezoelectric ceramics thick film with sputter or vacuum evaporation method. The 3rd, with piezoelectric ceramics The lower electrode layer that thick film layers is connected, the silicon substrate 1 that is made up of elastic layer and supporting layer passes through epoxy adhesive layer 2 and lower electrode layer 3 Be solidified into integral body. At the back side of silicon substrate 1, be provided with seven blind holes that obtain with the deep reaction ion etching method, its axis Identical with circle connection boss, the aperture is slightly larger than piezoelectric ceramics thick film footpath, and the degree of depth equals supporting layer thickness. The 8th, by monocrystalline The minute surface that silicon diaphragm is made, metal-plated membrane reflecting layer 9 on its upper surface, this minute surface be connected between the boss 6 by photosensitive height Polymers layer 7 connects.
Referring to Fig. 2, expressed the distribution situation of actuating unit position when using 37 actuating units among the figure, can from this figure Find out that 37 actuating units consist of the micro-actuator array of regular hexagon structure, because the center full symmetric, thereby so that Influence function between the adjacent actuators unit is identical, has made things convenient for decoupling zero control to calculate.
Referring to Fig. 3, abscissa is the voltage (unit is volt) that is applied on the actuator, and ordinate is actuating unit The length travel at center (unit is micron). As seen from the figure, along with the increase that is applied to the voltage on the actuator, activate The length travel of device unit center also increases thereupon,
Referring to Fig. 4, abscissa is the position (unit is millimeter) along centerline direction, and ordinate is that corresponding displacement is (single The position is micron), the point of black is the data point of test among the figure, curve is the matched curve according to the data point of test. By Scheme as can be known, the displacement maximum at actuating unit center diminishes outward gradually along the center.
Embodiment
Embodiment 1:
1. prepare silicon substrate piezoelectric ceramics basement membrane
With viscosity is the single-component epoxy glue (ZKEP-4530 of 120cps, Beijing Bo Mi company) (2000 changeed 18 seconds with spin coating method, 4000 commentaries on classics 30 seconds) be prepared into surface of silicon, piezoelectric ceramics substrate (25 millimeters of the diameters that will have bottom electrode then, 100 microns of thickness, the brilliant rich Electronics Co., Ltd. in Kunshan) fits to the surface of silicon that scribbles epoxy glue, and apply the pressure of 0.5MPa at the piezoelectric ceramics substrate surface; Then, place it in 160 ℃ the baking oven insulation 1 hour, epoxy glue is solidified, make silicon substrate piezoelectric ceramics basement membrane.
2. prepare silicon substrate piezoelectric ceramics thick film
(1) preparation piezoelectric ceramics etching liquid: earlier according to a conventional method at normal temperatures with NH
4The saturated solution of F and concentration are that 49% HF solution is 2: 3 preparation BHF solution by volume.Described volume ratio is the ratio of the volume of off-the-shelf solution; If the concentration of the solution of being prepared is with aforementioned different, the volume ratio that is adopted when then preparing will adjust accordingly, and makes the ratio suitable (volume ratio implication described in the following process for preparation and adjustment thereof are herewith) of the volumetric molar concentration of each composition.Then with NH under the deionized water preparation normal temperature
4The saturated solution of Cl; It is 38% conventional products that HCl solution can directly be bought concentration; H
2O is a deionized water; BHF: HCl: NH by volume at last
4Cl: H
2O=1: 2: 4: 4 with four kinds of solution being prepared by BHF, H
2O, HCl, NH
4Cl is hybridly prepared into etching liquid in proper order.Used raw material is chemical reagent, and it is pure that purity is analysis.
(2) be fixed on piezoelectric ceramics basement membrane on the silicon substrate with the wet etching attenuate: silicon substrate piezoelectric ceramics basement membrane is immersed in (1) prepares in the etching liquid, etching time is 10 minutes, then with 70 ℃ distilled water immersion 5 minutes and rock sample and remove residue; Repeat this process repeatedly, obtain thickness at last and be 25 microns piezoelectric ceramics thick film.
3. with atomization method etch silicon substrate piezoelectric ceramics thick film, make its shape satisfy required micro-actuator array request.
(1) on the piezoelectric ceramics thick film preparation according to the photoresist mask of array of actuators shape set: the S1830 eurymeric photoresist that adopts U.S. Shipley company is as mask, prepares photoresist layer with the method for rotation coating on silicon substrate piezoelectric ceramics thick film.The rotating speed of even glue is 4000 rpms, even 40 seconds glue time, thick about 3 microns of glue.Before 95 ℃, photoresist was cured in roasting 15 minutes behind the even glue, uses UV ultraviolet photolithographic machine (this equipment is produced by American AB M company) after 120 ℃, to bake behind the required mask pattern exposure imaging then and carried out post bake in 40 minutes.
(2) atomization method etching piezoelectric ceramics thick film: the piezoelectric ceramics thick film that has the photoresist mask of preparation in (1) is put into the mist field that is formed by the piezoelectric ceramics etching liquid carry out etching, make silicon substrate piezoelectric ceramics thick film array; Wherein, etching time is 7 minutes; After etching finishes, take out the sample washed with de-ionized water immediately; In acetone, soak then and removed photoetching glue residue in 10 minutes, again with deionized water lavage specimens product.Take out, dry, obtain the piezoelectric ceramics thick film array of surperficial noresidue.
4. prepare the top electrode array
By magnetically controlled sputter method (this equipment is produced by Chinese Academy of Sciences's microelectronics center) successively sputter titanium layer and platinum layer, titanium layer thickness is 50 nanometers on piezoelectric ceramics thick film array, and platinum layer thickness is 150 nanometers; Then, preparation photoresist mask on the metal level that is plated, the preparation process of photoresist mask is with above-mentioned 3 (1); Then, utilize ion beam etching method (this equipment is by the 48 production of science and technology group of China Electronics) to etch away unnecessary platinum layer and titanium layer, etching time is 10 minutes, makes the top electrode array.
5. preparation connects boss
The method that applies with rotation on the top electrode array of above-mentioned preparation prepares AZ9260 photosensitive polymer layer.Rotating speed is 2000 rpms, even 40 seconds glue time, thick about 10 microns of glue; Before 110 ℃, photosensitive polymer was cured in roasting 80 seconds behind the even glue, uses UV ultraviolet photolithographic machine (this equipment is produced by American AB M company), to obtain the photosensitive polymer boss of 10 micron thickness then required mask pattern exposure imaging.
6. preparation minute surface
The monocrystalline silicon sheet surface of twin polishing that at thickness is 360 microns is with the silicon nitride film of plasma reinforced chemical meteorology deposition method (this equipment is produced by Japanese Samco company) preparation 1 micron thickness, be immersed in the middle etching of KOH solution (30% concentration) of 70 ℃ of abundant constant temperature of water then, etching time is about 8 hours, take out the back washed with de-ionized water, be immersed in then in 49% the HF solution 10 minutes, remove the silicon nitride film of monocrystalline silicon surface, and use washed with de-ionized water, dry, make the monocrystalline silicon membrane of 20 micron thickness; Then on monocrystalline silicon membrane surface with the gold-plated film of vacuum evaporation coating film method (this equipment is produced by Japanese ULVAC company), the thickness of golden membranous layer is 150nm, makes minute surface.
7. minute surface is fixedly installed on the array of actuators
The method that applies with rotation on the reverse side of above-mentioned minute surface prepares AZ9260 photosensitive polymer layer.Rotating speed is 2000 rpms, even 40 seconds glue time, thick about 10 microns of glue; Then the reverse side of minute surface is fitted to and have on the array of actuators that connects boss, and on minute surface, apply the pressure of 0.01MPa, photosensitive polymer was cured in 20 minutes 110 ℃ of bakings then again; And form and the corresponding hole of piezoelectric ceramics thick film layers by the deep reaction ion etching method from substrate back, the axis in hole is identical with circular connection boss, and the aperture is directly bigger by 10% than piezoelectric ceramics thick film, and the degree of depth equals supporting layer thickness.Introduce electric wire at last again, encapsulate finished product.
Claims (7)
1. the micro deformable mirror that drives of a piezoelectric thick, comprise micro-actuator array and the minute surface formed by actuating unit, actuating unit wherein by silicon substrate, have a upper/lower electrode piezoelectric ceramic film be connected boss and form, be provided with and the corresponding hole of piezoelectric ceramics rete at the silicon substrate back side, it is characterized in that described micro-actuator array is centrosymmetric regular hexagon structure; The thickness of described piezoelectric ceramics rete is the 10-50 micron; Described minute surface is connected with top electrode by the connection boss that photosensitive polymer constitutes.
2, micro deformable mirror as claimed in claim 1 is characterized in that, described minute surface is that thickness is the monocrystalline silicon diaphragm of 20-50 micron thickness.
3. micro deformable mirror as claimed in claim 1 is characterized in that, described minute surface is that the upper surface at the monocrystalline silicon diaphragm adds the plating reflection horizon.
4. the preparation method of the micro deformable mirror that piezoelectric film as claimed in claim 1 drives, it is characterized in that, its preparation process comprises: 1) the piezoelectric ceramics substrate that will have a bottom electrode with routine techniques is cured on the silicon substrate of being made up of elastic layer and supporting layer, obtains silicon substrate piezoelectric ceramics basement membrane; 2) utilize the wet etching method etch silicon substrate of immersion mode to press ceramic basement membrane, make the piezoceramics layer reduced thickness, obtain silicon substrate piezoelectric ceramics thick film to the 10-50 micron; 3) with wet etching method etch silicon substrate piezoelectric ceramics thick film, make its shape satisfy the micro-actuator array request; 4) preparation top electrode array on above-mentioned silicon substrate piezoelectric ceramics thick film array; 5) the upper surface preparation at above-mentioned top electrode array connects boss; 6) preparation minute surface; 7) utilize photosensitive polymer that minute surface is fixedly installed on the array of actuators, and form and the corresponding hole of piezoelectric ceramics thick film layers by the deep reaction ion etching method from substrate back, introduce electric wire at last again, encapsulate finished product.
5. preparation method as claimed in claim 4 is characterized in that, described micro-actuator array is centrosymmetric regular hexagon structure.
6. preparation method as claimed in claim 4 is characterized in that, described minute surface is to be made by the monocrystalline silicon diaphragm of wet etching method attenuate.
7. as claim 4 or 6 described preparation methods, it is characterized in that described minute surface is that the plating reflection horizon constitutes on the monocrystalline silicon diaphragm.
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| CN114043321B (en) * | 2021-11-30 | 2023-03-03 | 北京创思工贸有限公司 | Deformable mirror processing method |
| CN114895454A (en) * | 2022-04-29 | 2022-08-12 | 四川大学 | MEMS (micro-electromechanical system) process-based film piezoelectric micro-deformable mirror and manufacturing method thereof |
| CN114895454B (en) * | 2022-04-29 | 2023-09-22 | 四川大学 | MEMS (micro electro mechanical System) process-based thin film piezoelectric micro-deformable mirror and manufacturing method thereof |
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