CN107812691B - Piezoelectric ultrasonic transducer and preparation method thereof - Google Patents
Piezoelectric ultrasonic transducer and preparation method thereof Download PDFInfo
- Publication number
- CN107812691B CN107812691B CN201710901235.1A CN201710901235A CN107812691B CN 107812691 B CN107812691 B CN 107812691B CN 201710901235 A CN201710901235 A CN 201710901235A CN 107812691 B CN107812691 B CN 107812691B
- Authority
- CN
- China
- Prior art keywords
- substrate
- ultrasonic transducer
- vibrating diaphragm
- diaphragm
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000002131 composite material Substances 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000007738 vacuum evaporation Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Transducers For Ultrasonic Waves (AREA)
Abstract
The invention provides a piezoelectric ultrasonic transducer and a preparation method thereof, wherein the piezoelectric ultrasonic transducer comprises a substrate, a vibrating diaphragm and a piezoelectric film, wherein the substrate is provided with a cavity in the center, the vibrating diaphragm is fixed on the substrate, the piezoelectric film is connected with the vibrating diaphragm, the piezoelectric film comprises a first surface close to the vibrating diaphragm and a second surface far away from the vibrating diaphragm, the piezoelectric ultrasonic transducer further comprises a first electrode arranged on the first surface and a second electrode arranged on the second surface, a mass block is arranged on the surface of the vibrating diaphragm close to one side of the substrate, and the mass block is arranged in the cavity of the substrate. The piezoelectric ultrasonic transducer can improve the sound pressure of products.
Description
Technical Field
The invention relates to the field of ultrasonic sensors, in particular to a piezoelectric ultrasonic transducer and a preparation method thereof.
Background
The ultrasonic sensor has wide application in social production and life, and comprises ultrasonic processing, ultrasonic positioning, ultrasonic detection, ultrasonic imaging and the like. As a device for interconversion between electrical energy and mechanical energy, an ultrasonic transducer is an important component of an ultrasonic sensor. The traditional ultrasonic transducer is usually manufactured based on machining, so that the traditional ultrasonic transducer has the defects of large volume, low machining precision, high machining cost, difficulty in forming an array structure and the like. The ultrasonic transducer based on the MEMS (microelectromechanical systems) technology is processed by adopting a microelectronic process, the diameter size can be reduced to the micron level, the resonance frequency can reach hundreds of megahertz, and the imaging and detecting precision is greatly improved due to the higher resonance frequency. In addition, the ultrasonic transducer units processed by the MEMS process can form a large-scale array, the unit consistency is good, the functions of focusing, dispersing, directional scanning and the like of ultrasonic beams are conveniently realized by using a phase control technology, and the flexibility of the application of the ultrasonic technology is greatly enhanced.
The existing MEMS ultrasonic transducer mainly has two types, namely a capacitive type ultrasonic transducer and a piezoelectric type ultrasonic transducer, wherein the MEMS capacitive ultrasonic transducer is formed by an upper electrode plate and a lower electrode plate and is driven by electrostatic force between the electrode plates, so that the MEMS capacitive ultrasonic transducer has the advantages of larger electromechanical coupling coefficient and higher resonant frequency, but also has the defects of higher driving voltage, larger influence by parasitic capacitance, larger electrical output impedance, difficulty in matching, difficulty in considering both receiving efficiency and transmitting efficiency and the like; compared with a capacitive ultrasonic transducer, the piezoelectric ultrasonic transducer is composed of a piezoelectric film, a vibration layer, an upper metal electrode and a lower metal electrode, and has the advantages of low driving voltage, low output impedance, high transmitting and receiving efficiency and the like, so that the piezoelectric ultrasonic transducer is applied to many occasions. However, when the transducer works, transverse strain is generated by the piezoelectric layer firstly, and then the transverse strain is converted into longitudinal deformation in the direction perpendicular to the substrate through the assistance of the vibration layer, so that the electromechanical coupling coefficient in the whole process is low, the conversion efficiency of electric energy and mechanical energy is low, and the sound pressure output of the ultrasonic sensor is limited. Therefore, how to improve the sound pressure output of the MEMS piezoelectric ultrasonic transducer is a technical problem that needs to be solved urgently in the field.
Therefore, there is a need to provide a new piezoelectric ultrasonic transducer to solve the above problems.
Disclosure of Invention
The invention provides a piezoelectric ultrasonic transducer which can improve the output of sound pressure.
In order to solve the technical problem, the invention provides a piezoelectric ultrasonic transducer, which comprises a substrate, a vibrating diaphragm and a piezoelectric film, wherein the substrate is provided with a cavity in the center, the vibrating diaphragm is fixed on the substrate, the piezoelectric film is connected with the vibrating diaphragm, the piezoelectric film comprises a first surface close to the vibrating diaphragm and a second surface far away from the vibrating diaphragm, the piezoelectric ultrasonic transducer further comprises a first electrode arranged on the first surface and a second electrode arranged on the second surface, a mass block is arranged on the surface of the vibrating diaphragm close to one side of the substrate, and the mass block is arranged in the cavity of the substrate.
Preferably, the mass block and the diaphragm are of an integral structure.
Preferably, the mass and the diaphragm are made of the same material.
Preferably, the mass block is disposed in the center of the diaphragm.
Preferably, the size of the second electrode is smaller than the size of the diaphragm.
Preferably, the substrate is made of any one of silicon, sapphire, ceramic, glass or polymer.
Preferably, the diaphragm is made of any one of silicon dioxide, polysilicon, silicon nitride or polymer.
Preferably, the piezoelectric film is made of any one of aluminum nitride, zinc oxide, and lead zirconate titanate.
Preferably, the first electrode and the second electrode are made of any one conductive material of molybdenum, platinum or aluminum.
In order to solve the above problems, the present invention further provides a method for manufacturing the piezoelectric ultrasonic transducer, including the steps of:
providing a base substrate, wherein the base substrate comprises an upper surface and a lower surface, and a groove which is sunken from the upper surface to the lower surface is etched on the base substrate;
providing a vibrating diaphragm base material, depositing the vibrating diaphragm base material on the upper surface of the substrate base material, and depositing part of the vibrating diaphragm base material into the groove of the substrate base material to form a mass block base material;
thinning the surface of the vibrating diaphragm base material on the upper surface of the base material;
sequentially preparing a first electrode, a piezoelectric film and a second electrode on the surface of a vibrating diaphragm substrate;
and etching the lower surface of the substrate base material to form a cavity, releasing the diaphragm base material on the upper surface of the substrate base material to form a diaphragm, and releasing the mass base material to form a mass.
Compared with the prior art, the piezoelectric ultrasonic transducer comprises the vibrating diaphragm and the piezoelectric film connected with the vibrating diaphragm, and the surface of the vibrating diaphragm, which is close to one side of the substrate, is provided with the mass block. Due to the fact that the mass block is arranged, the vibrating diaphragm is in a piston shape in the vibrating process, compared with a traditional piezoelectric ultrasonic transducer with four-side fixed supporting vibrating diaphragms, due to the fact that the elastic coefficient of the vibrating diaphragm has nonuniformity, the dynamic vibration range of the transducer is enlarged, the effective area during vibration is enlarged, and the sound pressure output of the piezoelectric ultrasonic transducer is finally increased due to the superposition of the two effects.
Drawings
FIG. 1 is a schematic structural diagram of a piezoelectric ultrasonic transducer according to the present invention;
fig. 2 is a flow chart of a method for manufacturing a piezoelectric ultrasonic transducer according to the present invention.
Detailed Description
The invention will be further explained with reference to the drawings and the embodiments.
As shown in fig. 1, the piezoelectric ultrasonic transducer of the present embodiment includes a substrate 1, a diaphragm 2 fixed to the substrate 1, and a piezoelectric film 4 connected to the diaphragm 2. The center of the substrate 1 is provided with a cavity 10, and the diaphragm 2 is fixed on the substrate 1 and covers the cavity 10.
The piezoelectric film 4 includes a first surface 41 close to the diaphragm 2 and a second surface 42 remote from the diaphragm 2. The electrodes are electrode plates attached to the piezoelectric film 4, and specifically, include a first electrode 5 attached to a first surface 41 of the piezoelectric film 4 and a second electrode 6 disposed on a second surface 42.
The projection area of the first electrode 5 on the diaphragm 2 is smaller than that of the diaphragm 2. The second electrode 6 and the piezoelectric film 4 both conform to the contour of the diaphragm 2.
The surface of the diaphragm 2 close to one side of the substrate 1 is provided with a mass block 3, and the mass block 3 is arranged in the cavity 10 of the substrate 1. The mass 3 is disposed at the center of one side surface of the diaphragm 2 near the cavity 10, and the mass 3 is located in the cavity 10. The mass block 3 and the diaphragm 2 are integrated, and in this embodiment, the mass block 3 is formed on the diaphragm 2 by a reflow filling process.
The mass block 3 is added in the central area of the diaphragm 2, so that the elastic coefficient of the diaphragm 2 generates non-uniform change, the vibration form of the diaphragm 2 is converted from the traditional Gaussian distribution into piston type distribution, the dynamic vibration range and the sound pressure output area are larger, and the sound pressure output of the piezoelectric ultrasonic sensor is further increased. The mass 3 and the diaphragm 2 are made of the same material in the same process, so that the piezoelectric ultrasonic transducer has better mechanical reliability compared with the traditional piezoelectric ultrasonic transducer with the mass.
The mass block 3 may be any one of a cube, a hemisphere, a cuboid, and an arc-shaped curved surface, and may be implemented as long as it can increase the weight of the middle portion of the composite diaphragm and improve the vibration form distribution of the composite diaphragm.
The substrate 1 may be made of silicon, sapphire, ceramic, glass, polymer, or the like, and is preferably a silicon substrate in the present embodiment; the diaphragm 2 may be made of silicon dioxide, polysilicon, silicon nitride, polymer, or the like, and in this embodiment, is specifically silicon dioxide; the piezoelectric film 4 may be made of AlN (aluminum nitride), ZnO (zinc oxide), or PZT (lead zirconate titanate piezoelectric ceramic); the electrodes are made of Mo (molybdenum), Pt (platinum) or Al (aluminum), wherein the first electrode 5 and the second electrode 6 can be made of the same material or different materials.
As shown in fig. 2, the method for manufacturing a piezoelectric ultrasonic transducer of the present invention specifically includes the following steps:
a. providing a base substrate 1a prepared from a silicon material, cleaning the base substrate 1a with an acid cleaning solution and an alkaline cleaning solution respectively, and then washing the base substrate 1a with deionized water; depositing silicon dioxide with the thickness of 5-10 microns on the front surface of the base substrate by using low-pressure chemical vapor deposition equipment as a mask layer, coating photoresist on the front surface of the base substrate 1a, carrying out photoetching exposure, forming a photoetching pattern at a position where a groove needs to be etched, putting the developed and dried silicon substrate into silicon dioxide corrosive liquid, carrying out wet etching to obtain a needed mask window, and after the etching is finished, putting the base substrate 1a into dry deep silicon etching equipment to etch the groove 1a1 with the depth of 2-100 microns;
b. providing a vibrating diaphragm base material 2a, placing the cleaned vibrating diaphragm base material 2a and a substrate base material 1a with a groove into a bonding machine for anodic bonding, wherein the bonding temperature is 300-500 ℃, preferably 400 ℃, the bonding voltage is 1000V, and a high vacuum state is kept in a cavity during bonding; the vibrating diaphragm base material is prepared from any one of silicon dioxide, polysilicon, silicon nitride or polymer;
c. placing the bonded base substrate 1a and diaphragm substrate 2a into a high-temperature furnace for backflow, wherein the backflow temperature is 800-950 ℃, nitrogen is filled into the furnace, the backflow time is 2 hours, and after the backflow is finished, rapid cooling and natural cooling are firstly carried out, so that the diaphragm substrate 2a is deposited into the groove 1a1 of the base substrate 1a to form a mass block substrate 3 a;
d. thinning the vibrating diaphragm base material 2a by using mechanical thinning equipment until the thickness of the vibrating diaphragm base material on the front surface (namely the surface close to the vibrating diaphragm base material) of the base material 1a is 1-20 mu m, then mechanically thinning the back surface (namely the surface far away from the vibrating diaphragm base material) of the base material 1a to achieve the purpose of releasing stress until the back surface obtains a flat surface, and then chemically and mechanically polishing the base material on the front surface to reduce the surface roughness of the vibrating diaphragm base material 1a to 1-3 nm;
e. preparing a Mo composite layer with the thickness of 0.01-1 mu m on the vibrating diaphragm substrate by using vacuum evaporation equipment or sputtering equipment to form a Cr/Au composite layer; or sequentially preparing Ti and Pt layers with the thickness of 0.01-0.1 mu m on the vibrating diaphragm substrate by utilizing vacuum evaporation equipment or sputtering equipment to form a Ti/Pt composite layer, and patterning the Mo composite layer or the Ti/Pt composite layer by utilizing a patterning technology to prepare a patterned first electrode so as to finish the preparation of the first electrode 5;
f. preparing an AlN piezoelectric material layer 4a with the thickness of 0.01-2 mu m on the surface of the first electrode 32 by using vacuum evaporation equipment or sputtering equipment, then coating photoresist, carrying out photoetching exposure to form a photoetching pattern, corroding by using corrosive liquid to form a piezoelectric film with a required pattern, removing residual photoresist, and completing the preparation of the piezoelectric film 4;
g. coating photoresist on the piezoelectric film 4, carrying out photoetching exposure to form a first electrode reverse pattern, and then sequentially carrying out vacuum evaporation or magnetron sputtering on a Mo layer with the thickness of 0.01-1 mu m; or preparing an Al or Pt layer with the thickness of 0.01-1 mu m by using vacuum evaporation equipment or sputtering equipment, and removing photoresist by using acetone to finish the preparation of the second electrode 6;
h. protecting the front side of the base substrate 1a by using photoresist, coating photoresist on the back side of the base substrate 1a, carrying out photoetching exposure, forming a photoetching pattern in a region needing to etch a cavity, wherein the thickness of the photoresist is more than 10 mu m, developing and drying, then placing the photoresist into dry deep silicon etching equipment for etching the cavity on the back side, automatically stopping etching after the etching reaches the diaphragm substrate 2a and the mass block substrate 3a to form the base 1 with the cavity 10, releasing the diaphragm substrate 2a to form the diaphragm 2, and releasing the mass block substrate 3a to form the mass block 3.
Compared with the prior art, the vibrating diaphragm 2 of the piezoelectric ultrasonic transducer is provided with the mass block 3 on the surface of one side close to the cavity 10, and the mass block 3 and the vibrating diaphragm 2 are of an integrally formed structure. Because the mass block 3 is arranged, the vibration shape of the vibrating diaphragm 2 in the vibration process is in a piston shape, compared with the traditional piezoelectric ultrasonic transducer with the vibrating diaphragm 2 fixedly supported by four sides, the elastic coefficient of the vibrating diaphragm 2 has nonuniformity, the dynamic vibration range of the transducer is enlarged, the effective area during vibration is enlarged, and the sound pressure output of the piezoelectric ultrasonic transducer is finally increased by superposing two effects.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (9)
1. A piezoelectric ultrasonic transducer comprises a substrate, a vibrating diaphragm and a piezoelectric film, wherein the center of the substrate is provided with a cavity, the vibrating diaphragm is fixed on the substrate, the piezoelectric film is connected with the vibrating diaphragm and comprises a first surface close to the vibrating diaphragm and a second surface far away from the vibrating diaphragm, the piezoelectric film further comprises a first electrode arranged on the first surface and a second electrode arranged on the second surface, the piezoelectric ultrasonic transducer is characterized in that a mass block is arranged on the surface of one side, close to the substrate, of the vibrating diaphragm, the mass block is arranged in the cavity of the substrate, and the mass block is arranged in the center of the vibrating diaphragm.
2. The piezoelectric ultrasonic transducer of claim 1, wherein the mass is of unitary construction with the diaphragm.
3. The piezoelectric ultrasonic transducer of claim 2, wherein the mass and diaphragm are made of the same material.
4. The piezoelectric ultrasonic transducer of claim 1, wherein the second electrode has a size smaller than a size of the diaphragm.
5. The piezoelectric ultrasonic transducer of claim 1, wherein the substrate is made of any one of silicon, sapphire, ceramic, glass, or polymer.
6. The piezoelectric ultrasonic transducer of claim 1, wherein the diaphragm is made of any one of silicon dioxide, polysilicon, silicon nitride, or polymer.
7. The piezoelectric ultrasonic transducer according to claim 1, wherein the piezoelectric film is made of any one of aluminum nitride, zinc oxide, or lead zirconate titanate.
8. The piezoelectric ultrasonic transducer according to claim 1, wherein the first electrode and the second electrode are made of any one conductive material selected from molybdenum, platinum or aluminum.
9. A method of manufacturing a piezoelectric ultrasonic transducer according to claim 1, comprising the steps of:
providing a base substrate, wherein the base substrate comprises an upper surface and a lower surface, and a groove which is sunken from the upper surface to the lower surface is etched on the base substrate;
providing a vibrating diaphragm base material, depositing the vibrating diaphragm base material on the upper surface of the substrate base material, and depositing part of the vibrating diaphragm base material into the groove of the substrate base material to form a mass block base material;
thinning the surface of the vibrating diaphragm base material on the upper surface of the base material;
sequentially preparing a first electrode, a piezoelectric film and a second electrode on the surface of a vibrating diaphragm substrate;
and etching the lower surface of the substrate base material to form a cavity, releasing the diaphragm base material on the upper surface of the substrate base material to form a diaphragm, and releasing the mass base material to form a mass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710901235.1A CN107812691B (en) | 2017-09-28 | 2017-09-28 | Piezoelectric ultrasonic transducer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710901235.1A CN107812691B (en) | 2017-09-28 | 2017-09-28 | Piezoelectric ultrasonic transducer and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107812691A CN107812691A (en) | 2018-03-20 |
| CN107812691B true CN107812691B (en) | 2020-05-29 |
Family
ID=61607284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710901235.1A Expired - Fee Related CN107812691B (en) | 2017-09-28 | 2017-09-28 | Piezoelectric ultrasonic transducer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107812691B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109459068A (en) * | 2018-10-09 | 2019-03-12 | 佛山市卓膜科技有限公司 | A kind of precision piezoelectric sensor |
| CN110113703B (en) * | 2019-05-18 | 2021-01-12 | 安徽奥飞声学科技有限公司 | Preparation method of MEMS structure |
| CN110113699B (en) * | 2019-05-18 | 2021-06-29 | 安徽奥飞声学科技有限公司 | Preparation method of MEMS structure |
| CN110149574B (en) * | 2019-05-18 | 2024-09-03 | 安徽奥飞声学科技有限公司 | MEMS structure |
| CN110099345B (en) * | 2019-05-18 | 2024-05-03 | 安徽奥飞声学科技有限公司 | MEMS structure |
| CN110113702B (en) * | 2019-05-18 | 2021-10-01 | 安徽奥飞声学科技有限公司 | Manufacturing method of MEMS structure |
| WO2021000070A1 (en) * | 2019-06-29 | 2021-01-07 | 瑞声声学科技(深圳)有限公司 | Mems microphone |
| CN215918085U (en) * | 2020-07-02 | 2022-03-01 | 瑞声科技（南京）有限公司 | Piezoelectric ultrasonic transducer |
| CN112511125B (en) * | 2020-09-23 | 2024-01-26 | 广东广纳芯科技有限公司 | Method for manufacturing surface acoustic wave device |
| CN113739693B (en) * | 2021-09-06 | 2024-01-30 | 中国工程物理研究院总体工程研究所 | Flexible hollow sphere roughness measuring head based on capacitance method |
| CN114222231B (en) * | 2021-12-10 | 2023-12-29 | 武汉敏声新技术有限公司 | Bimorph piezoelectric MEMS microphone based on clamped beam structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101712028B (en) * | 2009-11-13 | 2012-02-01 | 中国科学院声学研究所 | Thin-film ultrasonic transducer and preparation method thereof |
| WO2016106153A1 (en) * | 2014-12-21 | 2016-06-30 | Chirp Microsystems, Inc. | Piezoelectric micromachined ultrasonic transducers with low stress sensitivity and methods of fabrication |
| CN204724434U (en) * | 2015-06-17 | 2015-10-28 | 河南大学 | Meet the broadband ultrasonic transducer composite structure of multi-frequency demand |
| US10618079B2 (en) * | 2016-02-29 | 2020-04-14 | Qualcomm Incorporated | Piezoelectric micromechanical ultrasonic transducers and transducer arrays |
-
2017
- 2017-09-28 CN CN201710901235.1A patent/CN107812691B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN107812691A (en) | 2018-03-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107812691B (en) | Piezoelectric ultrasonic transducer and preparation method thereof | |
| CN107511318B (en) | Piezoelectric ultrasonic transducer and preparation method thereof | |
| TWI260940B (en) | Method for producing polymeric capacitive ultrasonic transducer | |
| JP4401958B2 (en) | Micromachined ultrasonic transducer and manufacturing method | |
| US7770279B2 (en) | Electrostatic membranes for sensors, ultrasonic transducers incorporating such membranes, and manufacturing methods therefor | |
| US8426235B2 (en) | Method for manufacturing capacitive electromechanical transducer | |
| WO2015112452A1 (en) | Curved piezoelectric transducers | |
| WO2005077012A2 (en) | Cmut devices and fabrication methods | |
| CN107520110A (en) | Piezoelectric ultrasonic transducer and preparation method thereof | |
| CN107511317B (en) | Piezoelectric ultrasonic transducer and preparation method thereof | |
| CN101844130A (en) | Array silicon micro-ultrasonic transducer and manufacturing method thereof | |
| US7721397B2 (en) | Method for fabricating capacitive ultrasonic transducers | |
| US20230085815A1 (en) | Non-linear tethers for suspended devices | |
| EP2747904A2 (en) | Pre-collapsed capacitive micro-machined transducer cell with plug | |
| Wang et al. | Design and fabrication of a piezoelectric micromachined ultrasonic transducer array based on ceramic PZT | |
| CN111644362A (en) | Embedded arched thin film driven PMUT unit and preparation method thereof | |
| CN109596208B (en) | MEMS piezoelectric vector hydrophone with U-shaped groove cantilever beam structure and preparation method thereof | |
| CN114698410B (en) | Ultrasonic transduction unit and preparation method thereof | |
| CN113301484A (en) | MEMS structure and manufacturing method thereof | |
| JP2010247295A (en) | Piezoelectric mems element and its manufacturing method | |
| CN110570836B (en) | Ultrasonic transducer and preparation method thereof | |
| CN211656381U (en) | MEMS structure | |
| CN111405442B (en) | MEMS structure | |
| JP2005039720A (en) | Piezoelectric ultrasonic sensor element | |
| Mescher et al. | Novel MEMS microshell transducer arrays for high-resolution underwater acoustic imaging applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200529 |