CN107511317B - Piezoelectric ultrasonic transducer and preparation method thereof - Google Patents
Piezoelectric ultrasonic transducer and preparation method thereof Download PDFInfo
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- CN107511317B CN107511317B CN201710643625.3A CN201710643625A CN107511317B CN 107511317 B CN107511317 B CN 107511317B CN 201710643625 A CN201710643625 A CN 201710643625A CN 107511317 B CN107511317 B CN 107511317B
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- 238000002360 preparation method Methods 0.000 title abstract description 8
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
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- 229910052710 silicon Inorganic materials 0.000 claims description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 4
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- 239000011787 zinc oxide Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
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- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
- B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
- B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
- B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
- B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
- B06B1/0607—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction using multiple elements
Abstract
The invention provides a piezoelectric ultrasonic transducer and a preparation method thereof, wherein the piezoelectric ultrasonic transducer comprises a vibrating diaphragm and a piezoelectric film attached to the vibrating diaphragm, and a resistor structure which can generate joule heat to increase the local temperature of the vibrating diaphragm under the power-on state is arranged in the edge area of the vibrating diaphragm close to the substrate direction. Because the vibrating diaphragm is made of materials such as silicon dioxide and the like, the Young modulus of which is reduced along with the temperature rise, the whole elastic coefficient of the vibrating diaphragm is reduced due to heating, the electromechanical coupling coefficient of the transducer is increased, and the sound pressure output is changed; on the other hand, the resonance frequency of the vibrating diaphragm during vibration is reduced along with the reduction of the elastic coefficient, and the dynamic adjustment of the ultrasonic output frequency is realized.
Description
Technical Field
The invention relates to the field of ultrasonic sensors, in particular to a piezoelectric ultrasonic transducer and a preparation method thereof.
Background
The ultrasonic sensor has wide application in social production and life, and comprises ultrasonic processing, ultrasonic positioning, ultrasonic detection, ultrasonic imaging and the like. As a device for interconversion between electrical energy and mechanical energy, an ultrasonic transducer is an important component of an ultrasonic sensor. The traditional ultrasonic transducer is usually manufactured based on machining, so that the traditional ultrasonic transducer has the defects of large volume, low machining precision, high machining cost, difficulty in forming an array structure and the like. The ultrasonic transducer based on the MEMS (microelectromechanical systems) technology is processed by adopting a microelectronic process, the diameter size can be reduced to the micron level, the resonance frequency can reach hundreds of megahertz, and the imaging and detecting precision is greatly improved due to the higher resonance frequency. In addition, the ultrasonic transducer units processed by the MEMS process can form a large-scale array, the unit consistency is good, the functions of focusing, dispersing, directional scanning and the like of ultrasonic beams are conveniently realized by using a phase control technology, and the flexibility of the application of the ultrasonic technology is greatly enhanced.
The existing MEMS ultrasonic transducer mainly has two types, namely a capacitive type ultrasonic transducer and a piezoelectric type ultrasonic transducer, wherein the MEMS capacitive ultrasonic transducer is formed by an upper electrode plate and a lower electrode plate and is driven by electrostatic force between the electrode plates, so that the MEMS capacitive ultrasonic transducer has the advantages of larger electromechanical coupling coefficient and higher resonant frequency, but also has the defects of higher driving voltage, larger influence by parasitic capacitance, larger electrical output impedance, difficulty in matching, difficulty in considering both receiving efficiency and transmitting efficiency and the like; compared with a capacitive ultrasonic transducer, the piezoelectric ultrasonic transducer is composed of a piezoelectric layer, a vibration layer, an upper metal electrode and a lower metal electrode, and has the advantages of low driving voltage, low output impedance, high transmitting and receiving efficiency and the like, so that the piezoelectric ultrasonic transducer is applied to many occasions. However, after the structural size of the MEMS piezoelectric ultrasonic transducer is fixed, the output performance of the transducer, such as resonant frequency, output sound pressure, etc., is also fixed, and on the other hand, because the penetration depths of the output ultrasonic waves with different resonant frequencies in air or liquid are not consistent, the transducer needs to provide different penetration depths and output sound pressures when applied in different occasions, so that the implementation of the MEMS piezoelectric ultrasonic transducer with dynamically adjustable performance is a technical problem that needs to be solved urgently at present, and has important significance for the optimization of the performance of the transducer and the reduction of the test cost.
Therefore, there is a need to provide a new piezoelectric ultrasonic transducer to solve the above problems.
Disclosure of Invention
The invention provides a piezoelectric ultrasonic transducer to realize optimization of sensor performance under different application occasions.
In order to solve the technical problem, the invention provides a piezoelectric ultrasonic transducer, which comprises a substrate, a diaphragm and a piezoelectric film, wherein the substrate is provided with a cavity in the center, the diaphragm is fixed on the substrate, the piezoelectric film is connected with the diaphragm, the piezoelectric film comprises a first surface close to the diaphragm and a second surface far away from the diaphragm, the piezoelectric ultrasonic transducer further comprises a first electrode arranged on the first surface and a second electrode arranged on the second surface, and a resistor structure capable of generating joule heat to raise the local temperature of the diaphragm under an electrified state is arranged in the edge area of the diaphragm close to the substrate.
Preferably, the resistor structure is disposed on a surface of the diaphragm close to the piezoelectric film.
Preferably, the size of the piezoelectric film is smaller than that of the diaphragm, and the piezoelectric film is disposed at a central position of the diaphragm.
Preferably, the resistive structure is disposed around the piezoelectric film.
Preferably, the resistor structure is a folded structure, a linear structure or a block structure.
Preferably, the substrate is made of any one of silicon, sapphire, ceramic, glass or polymer.
Preferably, the diaphragm is made of any one of silicon dioxide, polysilicon, silicon nitride or polymer.
Preferably, the piezoelectric film is made of any one of aluminum nitride, zinc oxide, and lead zirconate titanate.
The first electrode and the second electrode are made of any one conductive material of molybdenum, platinum or aluminum.
In order to solve the above problems, the present invention further provides a method for manufacturing the piezoelectric ultrasonic transducer, including the steps of:
preparing a substrate, and depositing a vibrating diaphragm on the substrate;
preparing a first electrode in the center of the surface of one side of the vibrating diaphragm, which is far away from the substrate, and preparing a resistor structure at the edge of the vibrating diaphragm;
preparing a piezoelectric film on the surface of the first electrode far away from the diaphragm;
preparing a second electrode on the surface of the piezoelectric film;
a cavity is etched in the substrate.
Compared with the prior art, the piezoelectric ultrasonic transducer comprises the vibrating diaphragm and the piezoelectric film arranged on the vibrating diaphragm, wherein the edge area of the vibrating diaphragm, which is close to the substrate, is provided with the resistor structure which can generate joule heat to increase the local temperature of the vibrating diaphragm in an electrified state. Because the vibrating diaphragm is made of materials such as silicon dioxide and the like, the Young modulus of which is reduced along with the temperature rise, the whole elastic coefficient of the vibrating diaphragm is reduced due to heating, the electromechanical coupling coefficient of the transducer is increased, and the sound pressure output is changed; on the other hand, the resonance frequency of the vibrating diaphragm during vibration is reduced along with the reduction of the elastic coefficient, and the dynamic adjustment of the ultrasonic output frequency is realized.
Drawings
FIG. 1 is a schematic structural diagram of a piezoelectric ultrasonic transducer according to the present invention;
FIG. 2 is a schematic top view of a piezoelectric ultrasonic transducer according to the present invention;
fig. 3 is a flow chart of a method for manufacturing a piezoelectric ultrasonic transducer according to the present invention.
Detailed Description
The invention will be further explained with reference to the drawings and the embodiments.
As shown in fig. 1, the piezoelectric ultrasonic transducer of the present embodiment includes a substrate 1, a diaphragm 2 fixed to the substrate 1, and a piezoelectric film 4 attached to the diaphragm 2. The center of the substrate 1 is provided with a cavity 10, and the diaphragm 2 is fixed on the substrate 1 and covers the cavity 10.
The edge region of the diaphragm close to the substrate 1 is provided with a resistive structure 3 which can generate joule heat in the energized state. The resistive structure 3 may cause a local temperature rise of the diaphragm 2, thereby changing the modulus of elasticity of the diaphragm.
The piezoelectric film 4 includes a first surface 41 close to the diaphragm 2 and a second surface 42 remote from the diaphragm 2. The electrodes are electrode plates attached to the piezoelectric film 4, and specifically, include a first electrode 5 attached to a first surface 41 of the piezoelectric film 4 and a second electrode 6 disposed on a second surface 42.
The projection area of the piezoelectric film 4 on the diaphragm 2 is smaller than that of the diaphragm 2. The piezoelectric film 4 is disposed at the center of the diaphragm 2. The first electrode 5 and the second electrode 6 both conform to the contour of the piezoelectric film 4.
As shown in fig. 2, the resistor structure 3 is disposed on the first surface 41 of the diaphragm 2 on the side close to the piezoelectric film 4, and the piezoelectric film 4 is smaller than the diaphragm, and preferably, the piezoelectric film 4 is disposed in the center of the diaphragm 2. The resistor structure 3 is disposed in an edge region of the diaphragm close to the substrate 1, specifically, in an edge region of a side surface of the diaphragm 2 away from the substrate 1. The resistive structure 3 is arranged around the piezoelectric film 4, in particular around the first electrode 5 and spaced apart and insulated from the first electrode 5. The resistor structure 3 is a metal resistor, and joule heat can be generated in a power-on state to increase the local temperature of the diaphragm 2. The resistance structure 3 may be a resistance wire or a resistance sheet with a folding structure, a linear structure or a block structure, and may be implemented as long as it is in a power-on state, so that the local temperature is raised to change the overall elastic coefficient of the diaphragm, so as to meet the requirements of different occasions.
The substrate 1 may be made of silicon, sapphire, ceramic, glass, polymer, or the like, and is preferably a silicon substrate in the present embodiment; the diaphragm 2 may be made of silicon dioxide, polysilicon, silicon nitride, polymer, or the like, and in this embodiment, is specifically silicon dioxide; the piezoelectric film 4 may be made of AlN (aluminum nitride), ZnO (zinc oxide), or PZT (lead zirconate titanate piezoelectric ceramic); the electrodes are made of Mo (molybdenum), Pt (platinum) or Al (aluminum), wherein the first electrode 5 and the second electrode 6 can be made of the same material or different materials.
Because the vibrating diaphragm 2 is made of materials such as silicon dioxide, polysilicon, silicon nitride or polymers, the Young modulus of which is reduced along with the temperature rise, the whole elastic coefficient of the vibrating diaphragm is reduced due to the heating of the resistance structure 3, the electromechanical coupling coefficient of the transducer is increased, and the sound pressure output is changed; on the other hand, the resonance frequency of the vibrating diaphragm during vibration is reduced along with the reduction of the elastic coefficient, and the dynamic adjustment of the ultrasonic output frequency is realized. Therefore, in a specific occasion, the piezoelectric ultrasonic transducer can change the performance of a product by electrifying and heating the resistance structure so as to adapt to the requirements of the corresponding occasion.
As shown in fig. 3, the method for manufacturing a piezoelectric ultrasonic transducer of the present invention specifically includes the following steps:
a. providing a substrate 1 prepared from a silicon material, and depositing and preparing a vibrating diaphragm 2 on the substrate 1, wherein the vibrating diaphragm is prepared from any one of silicon dioxide, polysilicon, silicon nitride or polymer, and the specific method comprises the following steps: firstly, respectively cleaning the substrate 1 with an acid cleaning solution and an alkaline cleaning solution, and then, washing the substrate 1 with deionized water; then depositing the film with the thickness of
The diaphragm 2;
b. the method for preparing the first electrode 5 and the resistor structure 3 on the diaphragm 2 comprises the following steps: preparation on the diaphragm 2 by using a vacuum evaporation device or a sputtering device
A first electrode 5 with a thickness, wherein the first electrode 5 may be formed of one of molybdenum, platinum or aluminum, or may be formed of a composite layer of chromium and gold, or a composite layer of titanium and platinum; then coating photoresist, and carrying out photoetching exposure to form a photoetching pattern; corroding the metal film by using corrosive liquid to form a first electrode 5 and resistor 3 structure with a required pattern, and removing residual photoresist to finish the preparation of the first electrode 5 and the resistor structure 3;
c. the method for preparing the piezoelectric film 4 on the surface of the first electrode 5 comprises the following steps: first, the first electrode 5 is formed on the surface thereof by a vacuum evaporation apparatus or a sputtering apparatus
Coating a photoresist on the piezoelectric material layer with the thickness, and performing photoetching exposure to form a photoetching pattern; corroding the piezoelectric material layer by using corrosive liquid to form a required pattern, and removing residual photoresist to finish the preparation of the piezoelectric film 4;
d. preparing a second electrode 6 on the surface of the piezoelectric film 4, wherein the specific method comprises the following steps: coating photoresist on the piezoelectric film 4, and carrying out photoetching exposure to form a reverse pattern of the second electrode 6, namely coating the photoresist at a position where the second electrode 6 is not required to be formed; then sequentially vacuum evaporation or magnetron sputtering
A second electrode layer of thickness, the material of which is selected to be the same as that of the first electrode 5; removing the photoresist by using acetone to complete the preparation of the second electrode 6;
e. etching on the substrate 1 to form the cavity 10, specifically: firstly, the front structure (i.e. the structure close to the surface of the vibrating diaphragm) of the substrate 1 is protected by photoresist, and the low-pressure chemical vapor deposition equipment is used for depositing the thickness of the front structure (i.e. the structure close to the surface of the vibrating diaphragm) on the back surface of the substrate 1
Of (2) aA silicon layer, which is coated with photoresist on the back surface of the substrate 1, is exposed by photoetching, and forms a photoetching pattern at the position where the release hole needs to be etched; putting the developing and dried product into silicon dioxide corrosive liquid to corrode a window needing a mask, removing residual photoresist, and then putting the product into dry deep silicon etching equipment to etch a back release hole to the etching depth of
The release of the transducer diaphragm 2 is completed. Of course, it is not necessary to form a silicon dioxide layer on the back surface of the substrate 1 in this step, and the substrate 1 may be directly etched to form the cavity 10, and the silicon dioxide is provided to better control the etching depth through the silicon dioxide.
Compared with the prior art, the piezoelectric ultrasonic transducer comprises the vibrating diaphragm and the piezoelectric film arranged on the vibrating diaphragm, wherein the edge area of the vibrating diaphragm close to the substrate direction is provided with the resistor structure which can generate joule heat to increase the local temperature of the vibrating diaphragm in the power-on state. Because the vibrating diaphragm is made of materials such as silicon dioxide and the like, the Young modulus of which is reduced along with the temperature rise, the whole elastic coefficient of the vibrating diaphragm is reduced due to heating, the electromechanical coupling coefficient of the transducer is increased, and the sound pressure output is changed; on the other hand, the resonance frequency of the vibrating diaphragm during vibration is reduced along with the reduction of the elastic coefficient, and the dynamic adjustment of the ultrasonic output frequency is realized.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (7)
1. A piezoelectric ultrasonic transducer comprises a substrate, a vibrating diaphragm and a piezoelectric film, wherein the center of the substrate is provided with a cavity, the vibrating diaphragm is fixed on the substrate, the piezoelectric film is connected with the vibrating diaphragm and comprises a first surface close to the vibrating diaphragm and a second surface far away from the vibrating diaphragm, the first electrode is arranged on the first surface and the second electrode is arranged on the second surface, the piezoelectric ultrasonic transducer is characterized in that a resistor structure capable of generating joule heat to increase the local temperature of the vibrating diaphragm under the power-on state is arranged in the edge area of the vibrating diaphragm close to the substrate, the resistor structure is arranged on the surface of the vibrating diaphragm close to the piezoelectric film, the size of the piezoelectric film is smaller than that of the vibrating diaphragm, the piezoelectric film is arranged in the center of the vibrating diaphragm, and the resistor structure is arranged around the piezoelectric film.
2. The piezoelectric ultrasonic transducer according to claim 1, wherein the resistive structure is a folded structure, a straight structure, or a block structure.
3. The piezoelectric ultrasonic transducer of claim 1, wherein the substrate is made of any one of silicon, sapphire, ceramic, glass, or polymer.
4. The piezoelectric ultrasonic transducer of claim 1, wherein the diaphragm is made of any one of silicon dioxide, polysilicon, silicon nitride, or polymer.
5. The piezoelectric ultrasonic transducer according to claim 1, wherein the piezoelectric film is made of any one of aluminum nitride, zinc oxide, or lead zirconate titanate.
6. The piezoelectric ultrasonic transducer according to claim 1, wherein the first electrode and the second electrode are made of any one conductive material selected from molybdenum, platinum or aluminum.
7. A method of manufacturing a piezoelectric ultrasonic transducer according to claim 1, comprising the steps of:
preparing a substrate, and depositing a vibrating diaphragm on the substrate;
preparing a first electrode in the center of the surface of one side of the vibrating diaphragm, which is far away from the substrate, and preparing a resistor structure at the edge of the vibrating diaphragm;
preparing a piezoelectric film on the surface of the first electrode far away from the diaphragm;
preparing a second electrode on the surface of the piezoelectric film;
a cavity is etched in the substrate.
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| CN201710643625.3A CN107511317B (en) | 2017-07-31 | 2017-07-31 | Piezoelectric ultrasonic transducer and preparation method thereof |
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| CN107511317B true CN107511317B (en) | 2020-02-18 |
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| CN108433744B (en) * | 2018-04-23 | 2023-11-28 | 中国科学院苏州生物医学工程技术研究所 | Ultrasonic transducer, ultrasonic probe and ultrasonic hydrophone |
| CN109231150B (en) * | 2018-09-06 | 2022-09-30 | 西安交通大学 | Combined film pMUTs and preparation method thereof |
| CN109798944A (en) * | 2018-12-25 | 2019-05-24 | 浙江大学 | Flowmeter and transition time measuring device based on micromechanics piezoelectric supersonic wave transducer |
| CN117225676A (en) * | 2023-11-14 | 2023-12-15 | 南京声息芯影科技有限公司 | Integrated structure of ultrasonic transducer array and CMOS circuit and manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1628977A (en) * | 2003-12-10 | 2005-06-22 | 佳能株式会社 | Dielectric thin film element, piezoelectric actuator and liquid discharge head, and method for manufacturing the same |
| US7683522B2 (en) * | 2006-03-03 | 2010-03-23 | Industrial Technology Research Institute | Composite mode transducer and cooling device having the composite mode transducer |
| JP2016138810A (en) * | 2015-01-28 | 2016-08-04 | パナソニックＩｐマネジメント株式会社 | Ultrasonic transducer and ultrasonic flowmeter using the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1628977A (en) * | 2003-12-10 | 2005-06-22 | 佳能株式会社 | Dielectric thin film element, piezoelectric actuator and liquid discharge head, and method for manufacturing the same |
| US7683522B2 (en) * | 2006-03-03 | 2010-03-23 | Industrial Technology Research Institute | Composite mode transducer and cooling device having the composite mode transducer |
| JP2016138810A (en) * | 2015-01-28 | 2016-08-04 | パナソニックＩｐマネジメント株式会社 | Ultrasonic transducer and ultrasonic flowmeter using the same |
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