CN101012099A - Method of manufacturing vitreous silica diffusion reaction furnace tube - Google Patents
Method of manufacturing vitreous silica diffusion reaction furnace tube Download PDFInfo
- Publication number
- CN101012099A CN101012099A CNA2007100200243A CN200710020024A CN101012099A CN 101012099 A CN101012099 A CN 101012099A CN A2007100200243 A CNA2007100200243 A CN A2007100200243A CN 200710020024 A CN200710020024 A CN 200710020024A CN 101012099 A CN101012099 A CN 101012099A
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- CN
- China
- Prior art keywords
- tube
- diffusion reaction
- tungsten
- vitreous silica
- reaction furnace
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B17/00—Forming molten glass by flowing-out, pushing-out, extruding or drawing downwardly or laterally from forming slits or by overflowing over lips
- C03B17/04—Forming tubes or rods by drawing from stationary or rotating tools or from forming nozzles
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/02—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in electric furnaces, e.g. by dielectric heating
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
The invention discloses a making method of transparent quartz dispersing reacting furnace pipe, which comprises the following steps: putting raw material into continuous fusing stove to fuse under 2400-2500 deg.c; setting the height of high temperature area in the tungsten copple at 750-850mm; falling raw material automatically; adopting nitrogen and argon gas with rate at 1: 3 as protective gas; drawing through pipe drawing machine continuously; testing pipe diameter and pipe wall through laser with metering path at 0-320mm and precision at 0.001mm; setting the moulding distance between 40mm and 60mm.
Description
Technical field
The present invention relates to a kind of quartz ware, particularly a kind of manufacture method of semiconductor device by using vitreous silica diffusion reaction furnace tube.
Background technology
Research institution and production firm produce the semiconductor device by using vitreous silica diffusion reaction furnace tube and all adopt two-step process both at home and abroad at present, i.e. gas refining, electric smelting two step method, or thermoforming two step method, two-step process is that oxyhydrogen flame system sticks together or shell, found into calibration tube again, be batch production, its volume recovery is low, the waste resource.Gas refining, the total volume recovery about 25% of electric smelting two step method, the total volume recovery about 31% of thermoforming two step method.Existing continuous induction melting furnace hot melt total amount is little, and product bubble, gas line are closeer, and tolerance of dimension is big, and to burst apart appear in otch, not concordant, and the inclined to one side wall degree of wall thickness is big, and ovality is bigger, is only limited to source material and uses, and inapplicable semiconducter device uses.
Summary of the invention
The technical problem to be solved in the present invention is at the deficiencies in the prior art, has proposed the method that a kind of continuous smelting method is produced vitreous silica diffusion reaction furnace tube.The product of producing can be used for semiconducter device.
The technical problem to be solved in the present invention is achieved through the following technical solutions; a kind of manufacture method of vitreous silica diffusion reaction furnace tube; be characterized in: raw material is put in the tungsten pincers pot of continuous induction melting furnace and carried out melting; working temperature is 2400 ℃~2500 ℃ in the stove; the height of the high-temperature zone that tungsten pincers pot bottom backgauge platform makes progress is 750mm~850mm; adopt automatic blanking; guarantee bed depth 1200mm in the stove; the operation shielding gas is the mixed gas of nitrogen and argon gas; nitrogen and argon gas ratio are 1: 3; adopt the tube drawing bench continuous drawing, and the employing range is 0~320mm; precision is that the laser diameter measuring instrument of 0.001mm carries out caliber and tube wall is measured.
The technical problem to be solved in the present invention can also come by the following technical programs further to realize that the moulding exit diameter of continuous induction melting furnace tungsten pincers pot bottom backgauge platform is than the big 16mm of diameter of the former of core bar bottom.
The technical problem to be solved in the present invention can also come by the following technical programs to realize that further the distance that the baseplane of backgauge platform to bottom of furnace body zirconium puts between the plane is the moulding distance of silica tube that the moulding distance is 40mm<h<60mm.
Because quartz belongs to glass material; its softening process and process of setting is slowly arranged; it has fixed fusing point and zero pour unlike metal; therefore the invention discloses the method that a kind of continuous smelting method is produced vitreous silica diffusion reaction furnace tube, compared with prior art, adopt resistance continuous smelting technology; clamp pot for founding body with major diameter tungsten; inert gas is a shielding gas, adopts high temperature melting, and controls by automatization.The vitreous silica diffusion reaction furnace tube that uses this technology method to produce φ 100mm~φ 260mm bore can satisfy the requirement of electronic industry semiconductor device by using quartz material.Product size, tolerance and physical and chemical index all reach international industry operative norm, and part index number such as tolerance of dimension can surpass U.S. GE like product standard.
Description of drawings
The continuous induction melting furnace structure diagram that Fig. 1 uses for the present invention.
Embodiment
A kind of manufacture method of vitreous silica diffusion reaction furnace tube; raw material is put in the tungsten pincers pot 2 of continuous induction melting furnace 1 and carried out melting; the continuous induction melting furnace installed capacity is 190kw; heating element divides six groups; adopt Y type connection method; heating tungsten net is 76 assemblings; founding body tungsten crucible 2 diameters is φ 540mm; working temperature is 2400 ℃~2500 ℃ in the stove; the height of the high-temperature zone that tungsten pincers pot 2 bottom backgauge platforms 5 make progress is L=750mm~850mm; adopt automatic blanking; guarantee bed depth H=1200mm in the stove, the operation shielding gas is the mixed gas of nitrogen and argon gas, and nitrogen and argon gas ratio are 1: 3; adopt the tube drawing bench continuous drawing, and the employing range is 0~320mm; precision is that the laser diameter measuring instrument of 0.001mm carries out caliber and tube wall is measured.
The moulding exit diameter of continuous induction melting furnace tungsten pincers pot bottom backgauge platform 5 is than the big 16mm of diameter of the former 4 of core bar 3 bottoms.Its former 4 diameters are φ 290mm, and the moulding exit diameter of backgauge platform 5 is φ 306mm, and the baseplane of backgauge platform 5 distance between the plane to the bottom of furnace body zirconium cover 6 is the moulding distance of silica tube, and the moulding distance is 40mm<h<60mm; Moulding distance will design at different tube diameters and tube wall, and moulding is too fast apart from having lacked cooling, can't blanking, can't draw; The oversize not easy-formation of moulding distance, bend pipe easily.
Claims (3)
1. the manufacture method of a vitreous silica diffusion reaction furnace tube; it is characterized in that: raw material is put in the tungsten pincers pot (2) of continuous induction melting furnace (1) and carried out melting; working temperature is 2400 ℃~2500 ℃ in the stove; the height of the high-temperature zone that tungsten pincers pots (2) bottom backgauge platforms (5) make progress is 750mm~850mm; adopt automatic blanking; guarantee bed depth 1200mm in the stove; the operation shielding gas is the mixed gas of nitrogen and argon gas; nitrogen and argon gas ratio are 1: 3; adopt the tube drawing bench continuous drawing, and the employing range is 0~320mm; precision is that the laser diameter measuring instrument of 0.001mm carries out caliber and tube wall is measured.
2. the manufacture method of vitreous silica diffusion reaction furnace tube according to claim 1 is characterized in that: the moulding exit diameter of continuous induction melting furnace tungsten pincers pot bottom backgauge platforms (5) is than the big 16mm of diameter of the former (4) of core bar (3) bottom.
3. the manufacture method of vitreous silica diffusion reaction furnace tube according to claim 1, it is characterized in that: the distance that go up between the plane to bottom of furnace body zirconium cover (6) baseplane of backgauge platform (5) is the moulding distance of silica tube, and the moulding distance is 40mm<h<60mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2007100200243A CN100546929C (en) | 2007-02-07 | 2007-02-07 | A kind of manufacture method of vitreous silica diffusion reaction furnace tube |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CNB2007100200243A CN100546929C (en) | 2007-02-07 | 2007-02-07 | A kind of manufacture method of vitreous silica diffusion reaction furnace tube |
Publications (2)
Publication Number | Publication Date |
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CN101012099A true CN101012099A (en) | 2007-08-08 |
CN100546929C CN100546929C (en) | 2009-10-07 |
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CNB2007100200243A Expired - Fee Related CN100546929C (en) | 2007-02-07 | 2007-02-07 | A kind of manufacture method of vitreous silica diffusion reaction furnace tube |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101643310B (en) * | 2009-09-03 | 2011-03-02 | 成士林 | Continuous smelting one-step method for producing overlarge-caliber high-temperature deformation resistant quartz glass tube |
CN105668999A (en) * | 2014-11-19 | 2016-06-15 | 南京大学连云港高新技术研究院 | Technology of directly producing low-hydroxyl quartz tube |
CN110156301A (en) * | 2019-06-21 | 2019-08-23 | 连云港福东正佑照明电器有限公司 | A kind of production of quartz tubes continuous smelting device and production method |
CN111302605A (en) * | 2020-04-07 | 2020-06-19 | 江苏圣达石英制品有限公司 | Continuous melting furnace for producing quartz glass rod with diameter phi of 600mm and preparation method |
-
2007
- 2007-02-07 CN CNB2007100200243A patent/CN100546929C/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101643310B (en) * | 2009-09-03 | 2011-03-02 | 成士林 | Continuous smelting one-step method for producing overlarge-caliber high-temperature deformation resistant quartz glass tube |
CN105668999A (en) * | 2014-11-19 | 2016-06-15 | 南京大学连云港高新技术研究院 | Technology of directly producing low-hydroxyl quartz tube |
CN105668999B (en) * | 2014-11-19 | 2017-12-26 | 南京大学连云港高新技术研究院 | A kind of technique for directly producing low-hydroxyl quartz tube |
CN110156301A (en) * | 2019-06-21 | 2019-08-23 | 连云港福东正佑照明电器有限公司 | A kind of production of quartz tubes continuous smelting device and production method |
CN110156301B (en) * | 2019-06-21 | 2023-10-20 | 连云港福东正佑照明电器有限公司 | Continuous melting device and method for quartz tube production |
CN111302605A (en) * | 2020-04-07 | 2020-06-19 | 江苏圣达石英制品有限公司 | Continuous melting furnace for producing quartz glass rod with diameter phi of 600mm and preparation method |
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Publication number | Publication date |
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CN100546929C (en) | 2009-10-07 |
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Granted publication date: 20091007 Termination date: 20160207 |