CN107216019A - The method that electric smelting method produces semiconductor technology large scale silica glass ingot - Google Patents
The method that electric smelting method produces semiconductor technology large scale silica glass ingot Download PDFInfo
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- CN107216019A CN107216019A CN201710262316.1A CN201710262316A CN107216019A CN 107216019 A CN107216019 A CN 107216019A CN 201710262316 A CN201710262316 A CN 201710262316A CN 107216019 A CN107216019 A CN 107216019A
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- silica glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
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- Organic Chemistry (AREA)
- Glass Melting And Manufacturing (AREA)
Abstract
A kind of method that electric smelting method produces semiconductor technology large scale silica glass ingot, it is characterized in that it comprises the following steps：Feed intake, forvacuum, the once step such as heating, secondary temperature elevation, pressurization homogenizing, annealing, Slow cooling and quick cooling.The present invention has with short production cycle, energy-saving effect clear advantage.
Description
Technical field
The present invention relates to a kind of quartzy smelting technique, especially a kind of preparation method of silica glass ingot, specifically
A kind of method that electric smelting method produces semiconductor technology large scale silica glass ingot.
Background technology
Semiconductor technology is to produce length first with hydrogen-oxygen flame fusion furnace with silica glass ingot production method in the prior art
The columned silica glass ingot of bar, then by this elongated quartzy ingot through electric smelter groove sink technique second melting be configured to cylinder with large diameter
Shape silica glass ingot maximum gauge about 1500mm, height about 150mm.There is the production cycle in the silica glass ingot of prior art production
It is long, the problems such as size is smaller, production cost is high, be unfavorable for the saving and protection of energy resources.
The content of the invention
It is smaller, raw that the purpose of the present invention is that the silica glass ingot produced for prior art has production cycle length, size
The problems such as cost is high is produced, a kind of method that electric smelting method produces semiconductor technology large scale silica glass ingot is invented.
The technical scheme is that：
A kind of method that electric smelting method produces semiconductor technology large scale silica glass ingot, it is characterized in that it comprises the following steps：
First, feed intake：Go out required quartz sand raw material weight according to final products Size calculation, and by the 105-110% of calculated weight
Amount put into large scale crucible, encapsulate smelting furnace；
2nd, forvacuum；Vacuum in stove is evacuated to≤10Pa；
3rd, once heat up：In-furnace temperature is gradually risen to 1500 ~ 1600 DEG C from room temperature with 200 ~ 300 DEG C/h heating rate
And 4 ~ 8h of constant temperature, until quartz sand raw material fully carries out crystal transfer and is vented completely；
4th, secondary temperature elevation：Continue to raise temperature to 1900 ~ 2000 DEG C and 30 ~ 40h of constant temperature, quartz sand raw material is completely converted into
Quartz glass melt；
5th, pressurization homogenizing：Nitrogen or argon gas are filled with to smelting furnace, furnace pressure is reached 2 ~ 2.5MPa, and keep 2 ~ 3h to make stone
Full and uniform unification inside English glass melt, eliminates no cofusing particle；
6th, anneal：In-furnace temperature is down to by 1150 ~ 1200 DEG C of scopes with 40 ~ 60 DEG C/h rate of temperature fall, keeps 3 ~ 5h to make solid-state
Silica glass ingot fully anneal away residual stress；
7th, Slow cooling：Slow cooling is continued with 12 ~ 15 DEG C/h rate of temperature fall, prevents quartzy ingot to be internally formed new stress；
8th, quick cooling：With 30 ~ 40 DEG C/h rate of temperature fall fast cooling to room temperature, take out and obtain required glass ingot.
Described once heating optimum temperature is 1550 DEG C.
It is 1950 DEG C that described secondary temperature elevation, which rises optimum temperature,.
The diameter 1800mm of described large scale silica glass ingot, highly not less than 650mm.
The profile of the interior shape of the crucible and final molding glass ingot matches.
Beneficial effects of the present invention：
The present invention have growth cycle it is short, energy-saving effect substantially, 40% is can save energy on year-on-year basis, can produce than existing methods big 1 times with
On large-size glass ingot.
The present invention provides brand-new manufacture method for the manufacture of large-size glass ingot.
The present invention breaches the constraint of conventional quartz product manufacture, by the use of crucible as mould, realizes work
Breakthrough in skill.
Embodiment
With reference to embodiment, the present invention is further illustrated.
A kind of method that electric smelting method produces semiconductor technology large scale silica glass ingot, it comprises the following steps：
1st, feed intake：3900 ~ 4500Kg will be weighed about（Quartzy ingot weight has 3% ~ 5% loss compared with quartz sand）Quartz sand raw material is put into
To large scale crucible（The profile of cavity shape and required glass ingot matches,）It is interior, encapsulate smelting furnace.
2nd, forvacuum；Vacuum in stove is evacuated to≤10Pa.
3rd, heat up：In-furnace temperature is gradually risen to 1500 ~ 1600 DEG C from room temperature with 200 ~ 300 DEG C/h heating rate
（Most preferably 1550 DEG C）.
4th, constant temperature：4 ~ 8h is kept, until quartz sand raw material fully carries out crystal transfer and is vented completely.
5th, heat up：Continue to raise temperature to 1900 ~ 2000 DEG C（Most preferably 1950 DEG C）.
6th, constant temperature：30 ~ 40h of keeping temperature, quartz glass melt is completely converted into by quartz sand raw material.
7th, pressurization homogenizing：Nitrogen or argon gas are filled with to smelting furnace, furnace pressure is reached 2 ~ 2.5MPa, and keep 2 ~ 3h to make
Full and uniform unification inside quartz glass melt, eliminates no cofusing particle.
8th, anneal：In-furnace temperature is down to by 1150 ~ 1200 DEG C of scopes with 40 ~ 60 DEG C/h rate of temperature fall, keeps 3 ~ 5h to make
The silica glass ingot of solid-state carries out residual stress of fully annealing away.
9th, Slow cooling：Slow cooling is continued with 12 ~ 15 DEG C/h rate of temperature fall, prevents quartzy ingot to be internally formed new answer
Power.
10th, quick cooling：With 30 ~ 40 DEG C/h rate of temperature fall fast cooling to room temperature.
The silica glass ingot being molded after cooling is taken out into the necessary machining of progress and obtains required finished product.
Part that the present invention does not relate to is same as the prior art or can be realized using prior art.
Claims (4)
1. a kind of method that electric smelting method produces semiconductor technology large scale silica glass ingot, it is characterized in that it includes following step
Suddenly：
First, feed intake：Go out required quartz sand raw material weight according to final products Size calculation, and by the 105-110% of calculated weight
Amount put into large scale crucible, encapsulate smelting furnace；
2nd, forvacuum；Vacuum in stove is evacuated to≤10Pa；
3rd, once heat up：In-furnace temperature is gradually risen to 1500 ~ 1600 DEG C from room temperature with 200 ~ 300 DEG C/h heating rate
And 4 ~ 8h of constant temperature, until quartz sand raw material fully carries out crystal transfer and is vented completely；
4th, secondary temperature elevation：Continue to raise temperature to 1900 ~ 2000 DEG C and 30 ~ 40h of constant temperature, quartz sand raw material is completely converted into
Quartz glass melt；
5th, pressurization homogenizing：Nitrogen or argon gas are filled with to smelting furnace, furnace pressure is reached 2 ~ 2.5MPa, and keep 2 ~ 3h to make stone
Full and uniform unification inside English glass melt, eliminates no cofusing particle；
6th, anneal：In-furnace temperature is down to by 1150 ~ 1200 DEG C of scopes with 40 ~ 60 DEG C/h rate of temperature fall, keeps 3 ~ 5h to make solid-state
Silica glass ingot fully anneal away residual stress；
7th, Slow cooling：Slow cooling is continued with 12 ~ 15 DEG C/h rate of temperature fall, prevents quartzy ingot to be internally formed new stress；
8th, quick cooling：With 30 ~ 40 DEG C/h rate of temperature fall fast cooling to room temperature, take out and obtain required glass ingot.
2. according to the method described in claim 1, it is characterized in that described once heating is increased to 1550 DEG C.
3. according to the method described in claim 1, it is characterized in that described secondary temperature elevation is increased to 1950 DEG C.
4. according to the method described in claim 1, it is characterized in that the diameter of described large scale silica glass ingot is not less than
1800mm, highly not less than 650mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710262316.1A CN107216019A (en) | 2017-04-20 | 2017-04-20 | The method that electric smelting method produces semiconductor technology large scale silica glass ingot |
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| CN201710262316.1A CN107216019A (en) | 2017-04-20 | 2017-04-20 | The method that electric smelting method produces semiconductor technology large scale silica glass ingot |
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| CN107216019A true CN107216019A (en) | 2017-09-29 |
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| CN201710262316.1A Pending CN107216019A (en) | 2017-04-20 | 2017-04-20 | The method that electric smelting method produces semiconductor technology large scale silica glass ingot |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109160724A (en) * | 2018-11-14 | 2019-01-08 | 江苏亨通智能科技有限公司 | The preparation method of quartz stone roller |
| CN111204959A (en) * | 2020-02-21 | 2020-05-29 | 连云港国伦石英制品有限公司 | Annealing method of quartz tube |
| CN111217516A (en) * | 2018-11-23 | 2020-06-02 | 贺利氏科纳米英国有限公司 | Quartz glass ingot, and method and apparatus for manufacturing same |
| CN113636744A (en) * | 2021-08-10 | 2021-11-12 | 烟台核晶陶瓷新材料有限公司 | Preparation process of quartz glass crucible and application method of quartz glass crucible for polycrystalline silicon ingot casting |
| CN115072974A (en) * | 2022-07-01 | 2022-09-20 | 陈富伦 | Ingot furnace and ingot casting method for producing quartz ingot by electric melting method |
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| CN101209891A (en) * | 2007-12-21 | 2008-07-02 | 张修枫 | Broad width infrared optical silex and melting method thereof |
| CN103941539A (en) * | 2013-01-22 | 2014-07-23 | 信越化学工业株式会社 | EUV lithography member, making method, and titania-doped quartz glass |
| CN105330135A (en) * | 2015-12-04 | 2016-02-17 | 太仓市建兴石英玻璃厂 | Preparing method for high-purity silica glass |
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2017
- 2017-04-20 CN CN201710262316.1A patent/CN107216019A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101209891A (en) * | 2007-12-21 | 2008-07-02 | 张修枫 | Broad width infrared optical silex and melting method thereof |
| CN103941539A (en) * | 2013-01-22 | 2014-07-23 | 信越化学工业株式会社 | EUV lithography member, making method, and titania-doped quartz glass |
| CN105330135A (en) * | 2015-12-04 | 2016-02-17 | 太仓市建兴石英玻璃厂 | Preparing method for high-purity silica glass |
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| 王玉芬等: "《石英玻璃》", 31 January 2007, 化学工业出版社 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109160724A (en) * | 2018-11-14 | 2019-01-08 | 江苏亨通智能科技有限公司 | The preparation method of quartz stone roller |
| CN109160724B (en) * | 2018-11-14 | 2021-06-22 | 江苏亨通智能科技有限公司 | Preparation method of quartz mound |
| CN111217516A (en) * | 2018-11-23 | 2020-06-02 | 贺利氏科纳米英国有限公司 | Quartz glass ingot, and method and apparatus for manufacturing same |
| CN111204959A (en) * | 2020-02-21 | 2020-05-29 | 连云港国伦石英制品有限公司 | Annealing method of quartz tube |
| CN113636744A (en) * | 2021-08-10 | 2021-11-12 | 烟台核晶陶瓷新材料有限公司 | Preparation process of quartz glass crucible and application method of quartz glass crucible for polycrystalline silicon ingot casting |
| CN115072974A (en) * | 2022-07-01 | 2022-09-20 | 陈富伦 | Ingot furnace and ingot casting method for producing quartz ingot by electric melting method |
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Application publication date: 20170929 |