CN101006205B - 向晶体形成装置装载熔融源材料的熔化器组件和方法 - Google Patents

向晶体形成装置装载熔融源材料的熔化器组件和方法 Download PDF

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Publication number
CN101006205B
CN101006205B CN2005800280995A CN200580028099A CN101006205B CN 101006205 B CN101006205 B CN 101006205B CN 2005800280995 A CN2005800280995 A CN 2005800280995A CN 200580028099 A CN200580028099 A CN 200580028099A CN 101006205 B CN101006205 B CN 101006205B
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CN
China
Prior art keywords
crucible
melter assembly
crystal
source material
nozzle
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Expired - Fee Related
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CN2005800280995A
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English (en)
Chinese (zh)
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CN101006205A (zh
Inventor
J·D·霍尔德
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SunEdison Inc
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SunEdison Inc
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Priority claimed from US11/155,104 external-priority patent/US7465351B2/en
Priority claimed from US11/155,105 external-priority patent/US7344594B2/en
Priority claimed from US11/155,385 external-priority patent/US7691199B2/en
Publication of CN101006205A publication Critical patent/CN101006205A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Silicon Compounds (AREA)
CN2005800280995A 2004-06-18 2005-06-17 向晶体形成装置装载熔融源材料的熔化器组件和方法 Expired - Fee Related CN101006205B (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US58130804P 2004-06-18 2004-06-18
US60/581,308 2004-06-18
US11/155,104 2005-06-17
US11/155,104 US7465351B2 (en) 2004-06-18 2005-06-17 Melter assembly and method for charging a crystal forming apparatus with molten source material
US11/155,105 US7344594B2 (en) 2004-06-18 2005-06-17 Melter assembly and method for charging a crystal forming apparatus with molten source material
US11/155,385 2005-06-17
US11/155,385 US7691199B2 (en) 2004-06-18 2005-06-17 Melter assembly and method for charging a crystal forming apparatus with molten source material
PCT/US2005/021369 WO2006009802A2 (en) 2004-06-18 2005-06-17 A melter assembly and method for charging a crystal forming apparatus with molten source material
US11/155,105 2005-06-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2009102657267A Division CN101724903B (zh) 2004-06-18 2005-06-17 向晶体形成装置装载熔融源材料的熔化器组件和方法

Publications (2)

Publication Number Publication Date
CN101006205A CN101006205A (zh) 2007-07-25
CN101006205B true CN101006205B (zh) 2011-11-09

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CN2009102657267A Expired - Fee Related CN101724903B (zh) 2004-06-18 2005-06-17 向晶体形成装置装载熔融源材料的熔化器组件和方法
CN2005800280995A Expired - Fee Related CN101006205B (zh) 2004-06-18 2005-06-17 向晶体形成装置装载熔融源材料的熔化器组件和方法

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CN2009102657267A Expired - Fee Related CN101724903B (zh) 2004-06-18 2005-06-17 向晶体形成装置装载熔融源材料的熔化器组件和方法

Country Status (7)

Country Link
EP (1) EP1756337B1 (enExample)
JP (1) JP5080971B2 (enExample)
KR (1) KR101300309B1 (enExample)
CN (2) CN101724903B (enExample)
DE (1) DE602005014103D1 (enExample)
TW (1) TWI347377B (enExample)
WO (1) WO2006009802A2 (enExample)

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EP1958925A1 (en) 2007-02-13 2008-08-20 Vivoxid Oy A system and method for manufacturing fibres
DE102008013326B4 (de) * 2008-03-10 2013-03-28 Siltronic Ag Induktionsheizspule und Verfahren zum Schmelzen von Granulat aus Halbleitermaterial
WO2009141963A1 (ja) * 2008-05-20 2009-11-26 信越半導体株式会社 単結晶製造装置
JP5163386B2 (ja) * 2008-09-17 2013-03-13 株式会社Ｓｕｍｃｏ シリコン融液形成装置
DE102009005837B4 (de) * 2009-01-21 2011-10-06 Pv Silicon Forschungs Und Produktions Gmbh Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben
DE102011007149A1 (de) * 2011-04-11 2012-10-11 Streicher Maschinenbau GmbH & Co. KG Verfahren und Vorrichtung zur Herstellung von Material mit mono- oder multikristalliner Struktur
EP2522764A3 (en) * 2011-05-12 2013-08-14 Korea Institute of Energy Research Reusable dual crucible for silicon melting and manufacturing apparatus of silicon thin film including the same
CN102718221B (zh) * 2012-06-28 2014-06-11 厦门大学 多晶硅自封堵浇铸装置
US9664448B2 (en) * 2012-07-30 2017-05-30 Solar World Industries America Inc. Melting apparatus
DE102013203740B4 (de) * 2013-03-05 2020-06-18 Solarworld Industries Gmbh Vorrichtung und Vefahren zur Herstellung von Silizium-Blöcken
JP6372079B2 (ja) * 2013-12-27 2018-08-15 シンフォニアテクノロジー株式会社 加熱溶解装置、加熱溶解システムおよび出湯制御装置
US10030317B2 (en) * 2014-10-17 2018-07-24 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling thickness of a crystalline sheet grown on a melt
KR101671593B1 (ko) * 2014-12-31 2016-11-01 주식회사 티씨케이 잉곳 성장장치의 리플렉터
JP6503933B2 (ja) * 2015-07-02 2019-04-24 株式会社Sumco シリコン融液供給装置及び方法並びにシリコン単結晶製造装置
TWI630365B (zh) * 2016-11-11 2018-07-21 財團法人金屬工業研究發展中心 Radon device with temperature control design and temperature control method thereof
KR102135061B1 (ko) * 2017-12-21 2020-07-17 주식회사 포스코 고휘발성 원소의 표준 시료 제조 장치 및 방법
CN111041554B (zh) * 2020-01-16 2021-05-25 江苏大学 一种用于晶硅铸锭炉的载气导流装置及其导流方法
US12480853B2 (en) * 2021-09-28 2025-11-25 University Of Central Florida Research Foundation, Inc. Crucibles for thermogravimetric analysis (TGA)
CN115852484B (zh) * 2023-02-27 2023-05-16 杭州天桴光电技术有限公司 一种高效制备氟化镁多晶光学镀膜材料的装置和方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6071339A (en) * 1995-06-16 2000-06-06 Optoscint, Inc. Continuous crystal plate growth process and apparatus

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DE4106589C2 (de) * 1991-03-01 1997-04-24 Wacker Siltronic Halbleitermat Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski
US5178719A (en) * 1991-08-20 1993-01-12 Horiba Instruments, Inc. Continuous refill crystal growth method
US6800137B2 (en) * 1995-06-16 2004-10-05 Phoenix Scientific Corporation Binary and ternary crystal purification and growth method and apparatus
JPH10279390A (ja) * 1997-02-04 1998-10-20 Komatsu Electron Metals Co Ltd 石英るつぼへの原料装填装置及び原料装填方法
JPH1192276A (ja) * 1997-09-22 1999-04-06 Super Silicon Kenkyusho:Kk 半導体単結晶の製造装置及び半導体単結晶の製造方法
FR2772741B1 (fr) * 1997-12-19 2000-03-10 Centre Nat Rech Scient Procede et installation d'affinage du silicium
US6402840B1 (en) * 1999-08-10 2002-06-11 Optoscint, Inc. Crystal growth employing embedded purification chamber
FR2831881B1 (fr) * 2001-11-02 2004-01-16 Hubert Lauvray Procede de purification de silicium metallurgique par plasma inductif couple a une solidification directionnelle et obtention directe de silicium de qualite solaire
FR2869028B1 (fr) * 2004-04-20 2006-07-07 Efd Induction Sa Sa Procede et installation de fabrication de blocs d'un materiau semiconducteur

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
US6071339A (en) * 1995-06-16 2000-06-06 Optoscint, Inc. Continuous crystal plate growth process and apparatus

Also Published As

Publication number Publication date
JP5080971B2 (ja) 2012-11-21
JP2008503427A (ja) 2008-02-07
CN101724903A (zh) 2010-06-09
WO2006009802A3 (en) 2006-08-24
TWI347377B (en) 2011-08-21
EP1756337A2 (en) 2007-02-28
WO2006009802A2 (en) 2006-01-26
KR20070042971A (ko) 2007-04-24
KR101300309B1 (ko) 2013-08-28
EP1756337B1 (en) 2009-04-22
CN101724903B (zh) 2013-02-13
TW200617220A (en) 2006-06-01
DE602005014103D1 (de) 2009-06-04
CN101006205A (zh) 2007-07-25

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