CN101004428A - 探针测量装置及系统 - Google Patents
探针测量装置及系统 Download PDFInfo
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- CN101004428A CN101004428A CN 200610005897 CN200610005897A CN101004428A CN 101004428 A CN101004428 A CN 101004428A CN 200610005897 CN200610005897 CN 200610005897 CN 200610005897 A CN200610005897 A CN 200610005897A CN 101004428 A CN101004428 A CN 101004428A
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- probe measurement
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- 239000000523 sample Substances 0.000 title claims abstract description 149
- 238000005259 measurement Methods 0.000 title claims abstract description 95
- 238000012360 testing method Methods 0.000 claims abstract description 102
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000919 ceramic Substances 0.000 claims description 12
- 235000012431 wafers Nutrition 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 5
- 238000011990 functional testing Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000004064 dysfunction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
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Application Number | Priority Date | Filing Date | Title |
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CN 200610005897 CN100573161C (zh) | 2006-01-19 | 2006-01-19 | 探针测量装置及系统 |
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CN 200610005897 CN100573161C (zh) | 2006-01-19 | 2006-01-19 | 探针测量装置及系统 |
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CN101004428A true CN101004428A (zh) | 2007-07-25 |
CN100573161C CN100573161C (zh) | 2009-12-23 |
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CN 200610005897 Active CN100573161C (zh) | 2006-01-19 | 2006-01-19 | 探针测量装置及系统 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101587149B (zh) * | 2008-05-23 | 2011-11-16 | 深圳富泰宏精密工业有限公司 | 阻抗测试装置 |
CN103777131A (zh) * | 2012-10-25 | 2014-05-07 | 上海华岭集成电路技术股份有限公司 | 集成电路测试系统及测试方法 |
CN106847723A (zh) * | 2011-07-06 | 2017-06-13 | 塞莱敦体系股份有限公司 | 具有一探针装置的测试系统及转位机构 |
CN108692662A (zh) * | 2018-07-12 | 2018-10-23 | 榆林学院 | 电子元件测试装置 |
CN108828272A (zh) * | 2018-04-24 | 2018-11-16 | 华北电力大学 | 一种用于高低温试验箱的多器件并行测试夹具 |
CN109959856A (zh) * | 2017-12-14 | 2019-07-02 | 惠州海格光学技术有限公司 | 一种plcc封装芯片测试盒 |
CN113030536A (zh) * | 2019-12-24 | 2021-06-25 | 爱思开海力士有限公司 | 探针测试卡及其制造方法 |
-
2006
- 2006-01-19 CN CN 200610005897 patent/CN100573161C/zh active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101587149B (zh) * | 2008-05-23 | 2011-11-16 | 深圳富泰宏精密工业有限公司 | 阻抗测试装置 |
CN106847723A (zh) * | 2011-07-06 | 2017-06-13 | 塞莱敦体系股份有限公司 | 具有一探针装置的测试系统及转位机构 |
CN103777131A (zh) * | 2012-10-25 | 2014-05-07 | 上海华岭集成电路技术股份有限公司 | 集成电路测试系统及测试方法 |
CN103777131B (zh) * | 2012-10-25 | 2016-07-06 | 上海华岭集成电路技术股份有限公司 | 集成电路测试系统及测试方法 |
CN109959856A (zh) * | 2017-12-14 | 2019-07-02 | 惠州海格光学技术有限公司 | 一种plcc封装芯片测试盒 |
CN108828272A (zh) * | 2018-04-24 | 2018-11-16 | 华北电力大学 | 一种用于高低温试验箱的多器件并行测试夹具 |
CN108692662A (zh) * | 2018-07-12 | 2018-10-23 | 榆林学院 | 电子元件测试装置 |
CN113030536A (zh) * | 2019-12-24 | 2021-06-25 | 爱思开海力士有限公司 | 探针测试卡及其制造方法 |
US11933818B2 (en) | 2019-12-24 | 2024-03-19 | SK Hynix Inc. | Probe test card and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
CN100573161C (zh) | 2009-12-23 |
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Owner name: POWERCHIP TECHNOLOGY CO., LTD. Free format text: FORMER NAME: POWERCHIP SEMICONDUCTOR CORP. |
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CP03 | Change of name, title or address |
Address after: Hsinchu Science Park, Taiwan, China Patentee after: Powerflash Technology Corporation Address before: Hsinchu City, Taiwan, China Patentee before: Powerchip Semiconductor Corp. |
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TR01 | Transfer of patent right |
Effective date of registration: 20190626 Address after: Hsinchu Science Park, Taiwan, China Patentee after: Lijing Jicheng Electronic Manufacturing Co., Ltd. Address before: Hsinchu Science Park, Taiwan, China Patentee before: Powerflash Technology Corporation |
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