CN100594607C - Built-in type multifunctional conformity type structure and fabricating method thereof - Google Patents
Built-in type multifunctional conformity type structure and fabricating method thereof Download PDFInfo
- Publication number
- CN100594607C CN100594607C CN200710148033A CN200710148033A CN100594607C CN 100594607 C CN100594607 C CN 100594607C CN 200710148033 A CN200710148033 A CN 200710148033A CN 200710148033 A CN200710148033 A CN 200710148033A CN 100594607 C CN100594607 C CN 100594607C
- Authority
- CN
- China
- Prior art keywords
- layer
- insulating barrier
- conductive layer
- built
- side conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 230000004888 barrier function Effects 0.000 claims description 110
- 230000010354 integration Effects 0.000 claims description 56
- 238000009413 insulation Methods 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 28
- 238000004080 punching Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000006870 function Effects 0.000 abstract description 11
- 230000002265 prevention Effects 0.000 abstract 1
- 238000003466 welding Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 101000669528 Homo sapiens Tachykinin-4 Proteins 0.000 description 1
- OKUGPJPKMAEJOE-UHFFFAOYSA-N S-propyl dipropylcarbamothioate Chemical compound CCCSC(=O)N(CCC)CCC OKUGPJPKMAEJOE-UHFFFAOYSA-N 0.000 description 1
- 102100039365 Tachykinin-4 Human genes 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention discloses an embedded multifunction integrated structure and a manufacture method thereof. In the invention, a concept of multilayer design of circuit boards is used for integrating morethan two passive devices on the structure of an element, and a finished product is stuck to a basal plate with the surface being stuck. Therefore, the embedded multifunction integrated structure canhave all the functions of over-current protection, over-voltage protection, electromagnetic interference prevention and antistatic simultaneously. Therefore, the invention can effectively integrate two or more passive devices to increase the functions thereof, moreover, can effectively reduce the bulk occupied by the passive devices on circuit boards, and lower the number of welding spots.
Description
Technical field
The present invention relates to a kind of multifunctional integration type structure and preparation method thereof, refer to multifunctional integration type structure of a kind of built-in type and preparation method thereof especially.
Background technology
Following electronic product will be towards having light, thin, short, little function, so that electronic product can more be tending towards miniaturization.And passive device (passive component) shared area in electronic product is the hugest, so integrated passive element effectively will make that electronic product can reach gently, thin, short, little function.
Yet the design of known passive device is all based on simple function.Therefore, when the passive device that difference in functionality need be installed when electronic product was protected electronic product, the known passive device of most simple functions that only can be provided with was in electronic product.Therefore the known practice not only expends the cost of manufacturing, takies the volume of electronic product integral body especially.
So, the part improved of the above-mentioned defective of inventor's thoughts, and according to the correlation experience of being engaged in for many years in this respect, the concentrated observation and research, and cooperate the utilization of scientific principle, and propose a kind of reasonable in design and effectively improve the technical solution of the present invention of above-mentioned defective.
Summary of the invention
Multifunctional integration type structure that provides a kind of built-in type and preparation method thereof is provided technological means to be solved by this invention.The present invention utilizes the notion of circuit board multilayer design, will be integrated in above two or more passive devices on the element structure, and the finished product of finishing will be attached on the substrate in the mode that face sticks together.Therefore, the multifunctional integration type structure of built-in type of the present invention can have overcurrent protection, superpotential protection simultaneously and contain anti-electromagnetic interference and anlistatig function.So the present invention can integrate two or more above passive devices effectively and increase that it is functional, moreover the present invention can reduce the shared long-pending body of passive device on the circuit board effectively, and reduces the number of solder joint.
In order to solve above-mentioned technological means; according to wherein a kind of scheme of the present invention, provide a kind of multifunctional integration type structure of built-in type to comprise: a loam cake insulating barrier, an over current protection sheath (over-current protection layer), an intermediate insulating layer (middle insulating layer), a multifunction protection layer (multifunctional protection layer), a lower cover insulating barrier (bottom cover insulating layer), an and side conductive unit (lateral conductiveunit).
Wherein, this loam cake insulating barrier has at least one first power input part.This over current protection sheath is arranged at the lower end of this loam cake insulating barrier, and this over current protection sheath has a second source input part and a second source efferent.This intermediate insulating layer is arranged at the lower end of this over current protection sheath, and this intermediate insulating layer has an opening.This multifunction protection layer is arranged at the lower end of this intermediate insulating layer; and this multifunction protection layer has one the 3rd power input part, one the 3rd power supply efferent, reaches a multifunction chip unit (multifunctional chip unit) that is electrically connected between the 3rd power input part and the 3rd power supply efferent, and wherein this multifunction chip unit is placed in the opening of this intermediate insulating layer.This lower cover insulating barrier is arranged at the lower end of this multifunction protection layer, and this lower cover insulating barrier has one the 4th power supply efferent and one the 5th power supply efferent.In regular turn with this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover insulating barrier storehouse combine.
Moreover; this side conductive unit comprises three layers of first side conductive layer insulated from each other, a second side conductive layer, and one the 3rd side conductive layer, and wherein each layer side conductive layer is formed in this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and the side of this lower cover insulating barrier from top to bottom in regular turn.Therefore, this first power input part and this second source input part electrically connect to produce by this first side conductive layer, this second source efferent, the 3rd power input part and the 4th power supply efferent by this second side conductive layer produce electrically connecting, and the 3rd power supply efferent with the 5th power supply efferent by the 3rd side conductive layer to produce electric connection.
In order to solve above-mentioned technological means, according to wherein a kind of scheme of the present invention, provide a kind of manufacture method of multifunctional integration type structure of built-in type, its step comprises: at first, provide a loam cake insulating barrier, it has at least one first power input part; One over current protection sheath (over-current protection layer) is provided, and it has a second source input part and a second source efferent; One intermediate insulating layer (middle insulating layer) is provided, and it has an opening and a conductive channel (conductive passage); One multifunction protection layer (multifunctional protection layer) is provided, its have one the 3rd power input part, one the 3rd power supply efferent, and one be electrically connected at the 3rd power input part and the 3rd power supply efferent between multifunction chip unit (multifunctional chip unit), wherein this multifunction chip unit is placed in the opening of this intermediate insulating layer; And, a lower cover insulating barrier (bottomcover insulating layer) is provided, it has one the 4th power supply efferent and one the 5th power supply efferent.
And then, in regular turn with this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover insulating barrier storehouse ground (stackedly) combine; At last; form a first side conductive layer; one second side conductive layer; and one the 3rd side conductive layer; wherein each layer side conductive layer is formed in this loam cake insulating barrier from top to bottom in regular turn; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the side of this lower cover insulating barrier; therefore this first power input part and this second source input part electrically connect to produce by this first side conductive layer; this second source efferent; the 3rd power input part and the 4th power supply efferent by this second side conductive layer produce electrically connecting, and the 3rd power supply efferent with the 5th power supply efferent by the 3rd side conductive layer to produce electric connection.
Therefore, beneficial effect of the present invention is that the multifunctional integration type structure of built-in type can have excess current protective function, over-voltage protection function simultaneously and contain anti-electromagnetic interference and anlistatig function.So the present invention can integrate two or more above passive devices effectively and increase that it is functional, moreover the present invention can reduce the shared long-pending body of passive device on the circuit board effectively, and reduces the number of solder joint.
Reach technology, means and the effect that predetermined purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, go deep into and concrete understanding when getting one thus, yet appended accompanying drawing only provides reference and explanation usefulness, is not to be used for the present invention is limited.
Description of drawings
Figure 1A is the three-dimensional exploded view of first embodiment of the multifunctional integration type structure of built-in type of the present invention;
Figure 1B is the stereogram behind the over current protection sheath reverse side of first embodiment of the invention;
Fig. 1 C is the stereogram behind the lower cover insulating barrier reverse side of first embodiment of the invention;
Fig. 1 D is the three-dimensional combination figure of first embodiment of the multifunctional integration type structure of built-in type of the present invention;
Fig. 2 A is the stereogram of the over current protection sheath of second embodiment of the invention;
Fig. 2 B is the stereogram behind the over current protection sheath reverse side of second embodiment of the invention;
Fig. 3 A is the stereogram of the multifunction protection layer of third embodiment of the invention;
Fig. 3 B is the stereogram of the lower cover insulating barrier of third embodiment of the invention;
Fig. 4 A is the stereogram of first kind of arrangement mode of multifunction chip of the present invention unit;
Fig. 4 B is the stereogram of second kind of arrangement mode of multifunction chip of the present invention unit;
Fig. 4 C is the stereogram of the third arrangement mode of multifunction chip of the present invention unit;
Fig. 5 is the flow chart of the manufacture method of the multifunctional integration type structure of built-in type of the present invention; And
Fig. 6 is that the multifunctional integration type structure of built-in type of the present invention is cut into the stereogram before single.
[main element description of reference numerals]
Loam cake insulating barrier 1 first chadless 10a
The second chadless 10b
The 3rd chadless 10c
First power input part 11
The first power supply efferent 12
Over current protection sheath 2 first chadless 20a
The second chadless 20b
The 3rd chadless 20c
The first electrode layer 2A
The second electrode lay 2B
Second source input part 21
Second source efferent 22
The first insulation division S1
The second insulation division S2
The 3rd insulation division S3
Over current protection sheath 2 ' the first electrode layer 2A '
The second electrode lay 2B '
Second source input part 21 '
Second source efferent 22 '
The first insulation division S1 '
The second insulation division S2 '
The 3rd insulation division S3 '
Intermediate insulating layer M opening M10
The first chadless Ma
The second chadless Mb
The 3rd chadless Mc
The second chadless 30b
The 3rd chadless 30c
The 3rd power input part 31
The 3rd power supply efferent 32
Multifunction protection layer 3 ' the 3rd power input part 31 '
The 3rd power supply efferent 32 '
Multifunction chip unit 33 '
Multifunction chip unit 33A
Functional chip 33a1
Functional chip 33a2
Functional chip 33a3
Functional chip 33b1
Functional chip 33b2
Functional chip 33c1
Functional chip 33c2
Functional chip 33c3
Functional chip 33c4
Lower cover insulating barrier 4 first chadless 40a
The second chadless 40b
The 3rd chadless 40c
The 4th power supply efferent 41
The 5th power supply efferent 42
Lower cover insulating barrier 4 ' opening 40 '
Side conductive unit 5 first side conductive layers 51
Second side conductive layer 52
The 3rd side conductive layer 53
First side conductive layer 51 '
Second side conductive layer 52 '
The 3rd side conductive layer 53 '
Power input Vin
Power output end Vout
Earth terminal G
Side runs through 6 first sides, groove unit and runs through groove 61
The 3rd side runs through groove 63
Embodiment
See also shown in Figure 1A to Fig. 1 D, it is respectively stereogram behind the lower cover insulating barrier reverse side of stereogram behind the over current protection sheath reverse side of three-dimensional exploded view, first embodiment of the invention of first embodiment of multifunctional integration type structure of built-in type of the present invention, first embodiment of the invention, and the three-dimensional combination figure of first embodiment of the multifunctional integration type structure of built-in type of the present invention.
By among these figure as can be known, the multifunctional integration type structure of a kind of built-in type provided by the present invention comprises: a loam cake insulating barrier 1, an over current protection sheath (over-current protectionlayer) 2, one intermediate insulating layer (middle insulating layer) M, a multifunction protection layer (multifunctional protection layer) 3, one lower cover insulating barrier (bottom coverinsulating layer) 4, an and side conductive unit (lateral conductive unit) 5.Wherein, this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and this lower cover insulating barrier 4 in regular turn storehouse together, and this side conductive unit 5 comprises three layers of first side conductive layer 51 insulated from each other, a second side conductive layer 52, and one the 3rd side conductive layer 53
Wherein, a side of this loam cake insulating barrier 1 has one first chadless 10a, and another opposite side of this loam cake insulating barrier 1 has one second chadless 10b and one the 3rd chadless 10c.In addition, this loam cake insulating barrier 1 has at least one first power input part 11 that is electrically connected at this first side conductive layer 51, at least one first power supply efferent (first power output portion) 12 that is electrically connected at this second side conductive layer 52, and at least one grounding parts (grounding portion) 13 that is electrically connected at the 3rd side conductive layer 53, and this at least one first power input part 11 forms in a side of the upper surface of this loam cake insulating barrier 1, and this at least one first power supply efferent 12 and this at least one grounding parts 13 are formed separately in another opposite side of the upper surface of this loam cake insulating barrier 1.
Moreover this over current protection sheath 2 is arranged at the lower end of this loam cake insulating barrier 1.One side of this over current protection sheath 2 has one first chadless 20a, and another opposite side of this over current protection sheath 2 has one second chadless 20b and one the 3rd chadless 20c.In addition; this over current protection sheath 2 by one first electrode layer (first electrode layer) 2A, a second electrode lay (second electrode layer) 2B, and a PTC material layer (positive temperature coefficient material layer) 2C is formed, and this PTC material layer 2C forms between this first electrode layer 2A and this second electrode lay 2B.Wherein, this PTC material layer 2C can be a high molecular positive temperature coefficient (PolymerPositive Temperature Coefficient, PPTC) material layer, resistance elements, capacitance material layer or the electrical sensative material bed of material.
Moreover; please cooperate shown in Figure 1B; this over current protection sheath 2 has a second source input part 21 and a second source efferent 22, this second source input part 21 side that is this second electrode lay 2B wherein, and this second source efferent 22 is the side of this first electrode layer 2A.In addition, this first electrode layer 2A has one and is used for first insulation division (first insulating portion) S1 and be used for and three side conductive layer 53 electrically completely cut off second insulation division (second insulatingportion) S2 electrically isolated with this first side conductive layer 51, and this second electrode lay 2B has one and is used for and this second side conductive layer 52 and electrically isolated the 3rd insulation division (third insulatingportion) S3 of the 3rd side conductive layer 53.Therefore, this first electrode layer 2A and this second electrode lay 2B pass through this second insulation division S2 and the 3rd insulation division S3 respectively with electrically isolated with the 3rd side conductive layer 53.
In addition, this intermediate insulating layer M is arranged at the lower end of this over current protection sheath 2, and this intermediate insulating layer M has an opening M10.And the side of this intermediate insulating layer M has one first chadless Ma, and another opposite side of this intermediate insulating layer M has one second chadless Mb and one the 3rd chadless Mc.
Moreover this multifunction protection layer 3 is arranged at the lower end of this intermediate insulating layer M.One side of this multifunction protection layer 3 has one first chadless 30a, and another opposite side of this multifunction protection layer 3 has one second chadless 30b and one the 3rd chadless 30c.In addition, this multifunction protection layer 3 has one the 3rd power input part 31, one the 3rd power supply efferent 32, reaches a multifunction chip unit (multifunctional chip unit) 33 that is electrically connected between the 3rd power input part 31 and the 3rd power supply efferent 32.
Wherein, this multifunction chip unit 33 is placed in the opening M10 of this intermediate insulating layer M.In the present embodiment, the 3rd power input part 31 and the 3rd power supply efferent 32 all form in the upper surface (top surface) of this multifunction protection layer 3.In addition; this multifunction chip unit 33 can be a functional chip (functional chip); and this functional chip can be an overvoltage protection (Over-Voltage Protection; OVP) chip, an anti-electromagnetic interference (Anti-Electromagnetic Interference; anti-EMI) chip or antistatic (Anti-Electrostatic Discharge, anti-ESD) chip.
In addition, this lower cover insulating barrier 4 is arranged at the lower end of this multifunction protection layer 3.One side of this lower cover insulating barrier 4 has one first chadless 40a, and another opposite side of this lower cover insulating barrier 4 has one second chadless 40b and one the 3rd chadless 40c.In addition, please cooperate shown in Fig. 1 C, this lower cover insulating barrier 4 has one the 4th power supply efferent 41 and one the 5th power supply efferent 42, and the 4th power supply efferent 41 and the 5th power supply efferent 42 all form in the lower surface of this lower cover insulating barrier 4.
Moreover, please cooperate shown in Fig. 1 D, each layer side conductive layer (51,52,53) is formed in this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3 from top to bottom in regular turn, reaches the side of this lower cover insulating barrier 4.Wherein, this first side conductive layer 51 is power input (power input side) Vin, this second side conductive layer 52 is power output end (power output side) Vout, and the 3rd side conductive layer 53 is earth terminal (grounding side) G.
In addition, the first chadless 30a of the first chadless Ma of the first chadless 20a of the first chadless 10a of this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and the first chadless 40a of this lower cover insulating barrier 4 be superimposed into a first side and run through groove 61; The second chadless Mb of the second chadless 10b of this loam cake insulating barrier 1, the second chadless 20b of this over current protection sheath 2, this intermediate insulating layer M, the second chadless 30b of this multifunction protection layer 3, and the second chadless 40b of this lower cover insulating barrier 4 be superimposed into a second side and run through groove 62; The 3rd chadless Mc of the 3rd chadless 10c of this loam cake insulating barrier 1, the 3rd chadless 20c of this over current protection sheath 2, this intermediate insulating layer M, the 3rd chadless 30c of this multifunction protection layer 3, and the 3rd chadless 40c of this lower cover insulating barrier 4 be superimposed into one the 3rd side and run through groove 63.
Therefore; this first side is run through groove 61 and is formed separately at this loam cake insulating barrier 1 by a plurality of; this over current protection sheath 2; this intermediate insulating layer M; this multifunction protection layer 3; and the first chadless (10a of a side of this lower cover insulating barrier 4; 20a; Ma; 30a; 40a) institute's storehouse forms; this second side is run through groove 62 and is formed separately at this loam cake insulating barrier 1 by a plurality of; this over current protection sheath 2; this intermediate insulating layer M; this multifunction protection layer 3; and the second chadless (10b of another opposite side of this lower cover insulating barrier 4; 20b; Mb; 30b; 40b) institute's storehouse forms, and the 3rd side runs through groove 63 and is formed separately at this loam cake insulating barrier 1 by a plurality of; this over current protection sheath 2; this intermediate insulating layer M; this multifunction protection layer 3; and the 3rd chadless (10c of this opposite side of this lower cover insulating barrier 4; 20c; Mc; 30c; 40c) institute's storehouse forms.
Moreover, first side separated from one another, above-mentioned three roads is run through groove 61, second side and is run through groove 62 and the 3rd side and run through groove 63 and be combined into a side and run through groove unit (lateralpenetrating groove unit) 6, and this first side conductive layer 51 forms in the inner surface that groove 61 is run through in this first side, this second side conductive layer 52 forms in the inner surface that groove 62 is run through in this second side, and the 3rd side conductive layer 53 forms in the inner surface that the 3rd side runs through groove 63.
Therefore, this first power input part 11 electrically connects to produce by this first side conductive layer 51 with this second source input part 21, this second source efferent 22, the 3rd power input part 31 electrically connect to produce by this second side conductive layer 52 with the 4th power supply efferent 41, and the 3rd power supply efferent 32 electrically connects to produce by the 3rd side conductive layer 53 with the 5th power supply efferent 42.
Please again referring to figs. 1A to shown in Fig. 1 C, the arrow among these figure is represented sense of current.Electric current is as described below at the main flow path of each layer (from this loam cake insulating barrier 1 to this lower cover insulating barrier 4):
Ground floor (this loam cake insulating barrier 1): by this first side conductive layer 51, electric current flows to the second source input part 21 of this over current protection sheath 2 from first power input part 11 of this loam cake insulating barrier 1.
The second layer (this over current protection sheath 2): electric current passes through this second electrode lay 2B, this PTC material layer 2C and this first electrode layer 2A in regular turn, and flows to this second source efferent 22 from this second source input part 21.Therefore, by the special material characteristic of this PTC material layer 2C, so that the present invention has overcurrent protection (Over-Current Protection, function OCP).
The 3rd layer (this intermediate insulating layer M): by this second side conductive layer 52, electric current flows to the 3rd power input part 31 of this multifunction protection layer from this second source efferent 22.
The 4th layer (this multifunction protection layer 3): according to the function setting of this multifunction chip unit 33, with the flow direction of decision electric current.Therefore, normal electric current can directly flow to down one deck; Abnormal electric current then flows to the 3rd power supply efferent 32 from the 3rd power input part 31 through this multifunction chip unit 33.For example: this functional chip unit 33 is an overvoltage protection (Over-Voltage Protection, an OVP) chip, and suppose that the load that this overvoltage protection chip sets is 5 volts (volt).Therefore, when electric current is less than 5 volts, then normally export this electric current; When electric current during, then make this electric current flow through this overvoltage protection chip and be sent to earth terminal greater than 5 volts.
Layer 5 (this lower cover insulating barrier 4): by this second side conductive layer 52, so that normal electric current flows to the 4th power supply efferent 41 of this lower cover insulating barrier 4 from the 3rd power input part 31; By the 3rd side conductive layer 53, so that abnormal electric current flows to the 5th power supply efferent 42 of this lower cover insulating barrier 4 and is sent to earth terminal from the 3rd power supply efferent 32.
See also shown in Fig. 2 A and Fig. 2 B, its be respectively the over current protection sheath of second embodiment of the invention stereogram, and the over current protection sheath reverse side of second embodiment of the invention after stereogram.
By among these figure as can be known, this second source input part 21 ' be the side of this first electrode layer 2A ', this second source efferent 22 ' be the side of this second electrode lay 2B ', and this first electrode layer 2A ' has one and is used for and this second side conductive layer 52 ' and the 3rd side conductive layer 53 ' electrically isolated the 3rd insulation division (thirdinsulating portion) S3 ', this the second electrode lay 2B ' has one and is used for being used for and the 3rd side conductive layer 53 ' electrically isolated second insulation division (second insulating portion) S2 ' with first insulation division (the first insulating portion) S1 ' and of this first side conductive layer 51 ' electrically isolated, thus this first electrode layer 2A ' and this second electrode lay 2B ' respectively by the 3rd insulation division S3 ' and this second insulation division S2 ' with the 3rd side conductive layer 53 ' electrically isolated.
Therefore; the current path of the second layer of second embodiment (this over current protection sheath 2 ') is: electric current is in regular turn through this first electrode layer 2A ', this PTC material layer 2C ' and this second electrode lay 2B ', and from this second source efferent 22 of this second source input part 21 ' flow to '.
See also shown in Fig. 3 A and Fig. 3 B, it is respectively stereogram, and the stereogram of the lower cover insulating barrier of third embodiment of the invention of the multifunction protection layer of third embodiment of the invention.By among these figure as can be known; the 3rd power input part 31 ', the 3rd power supply efferent 32 ' with this multifunction protection layer 3 of this multifunction chip unit 33 ' all form in ' lower surface (bottom surface), and this lower cover insulating barrier 4 ' have be used for ccontaining this multifunction chip unit 33 ' opening 40 '.
Therefore; the present invention also can be in conjunction with first embodiment and the 3rd embodiment; and make the 3rd power input part 31, the 3rd power supply efferent 32 all form in the upper surface (shown in first embodiment) of a multifunction protection layer with this multifunction chip unit 33, and make simultaneously the 3rd power input part 31 ', the 3rd power supply efferent 32 ' with this multifunction chip unit 33 ' all form in lower surface (shown in the 3rd embodiment) of this multifunction protection layer.In other words; the 3rd power input part can form in the upper surface (topsurface) and lower surface (bottom surface) of this multifunction protection layer simultaneously, and the 3rd power supply efferent can form in the upper surface (top surface) and lower surface (bottom surface) of this multifunction protection layer simultaneously.
Please refer to shown in Fig. 4 A, it is the stereogram of first kind of arrangement mode of multifunction chip of the present invention unit.By among the figure as can be known; this multifunction chip unit 33A is made up of a plurality of functional chips (33a1,33a2,33a3); and these functional chips are respectively an overvoltage protection (Over-Voltage Protection; OVP) chip, an anti-electromagnetic interference (Anti-Electromagnetic Interference; anti-EMI) chip, and antistatic (Anti-Electrostatic Discharge, anti-ESD) chip.Moreover these functional chips (33a1,33a2,33a3) (parallelly) in parallel are electrically connected between the 3rd power input part 31 and the 3rd power supply efferent 32.
Please refer to shown in Fig. 4 B, it is the stereogram of second kind of arrangement mode of multifunction chip of the present invention unit.By among the figure as can be known; this multifunction chip unit 33B is made up of a plurality of functional chips (33b1,33b2); and these functional chips can be an overvoltage protection (Over-Voltage Protection; OVP) chip, an anti-electromagnetic interference (Anti-Electromagnetic Interference; anti-EMI) chip, and antistatic (Anti-Electrostatic Discharge, anti-ESD) any selection of chip.Moreover these functional chips (33b1,33b2) in series (seriesly) are electrically connected between the 3rd power input part 31 and the 3rd power supply efferent 32.
Please refer to shown in Fig. 4 C, it is the stereogram of the third arrangement mode of multifunction chip of the present invention unit.By among the figure as can be known; this multifunction chip unit 33C is made up of a plurality of functional chips (33c1,33c2,33c3,33c4); and these functional chips can be an overvoltage protection (Over-Voltage Protection; OVP) chip, an anti-electromagnetic interference (Anti-Electromagnetic Interference; anti-EMI) chip, and anti-quiet (Anti-Electrostatic Discharge, anti-ESD) any selection of chip.Moreover, these functional chips (33c1,33c2,33c3,33c4) can be simultaneously in parallel (parallelly) and in series (serially) be electrically connected at the 3rd power input part 31 and the 3rd power supply efferent 32 between.
See also shown in Figure 5ly, it is the flow chart of the manufacture method of the multifunctional integration type structure of built-in type of the present invention.By in the flow chart as can be known, the manufacture method of the multifunctional integration type structure of a kind of built-in type provided by the present invention, its step comprises:
Step S100: a loam cake insulating barrier is provided, and it has at least one first power input part.
Step S102: an over current protection sheath (over-current protection layer) is provided, and it has a second source input part and a second source efferent.
Step S104: an intermediate insulating layer (middle insulating layer) is provided, and it has an opening and a conductive channel (conductive passage).
Step S106: a multifunction protection layer (multifunctional protection layer) is provided; it has one the 3rd power input part, one the 3rd power supply efferent, reaches a multifunction chip unit (multifunctional chip unit) that is electrically connected between the 3rd power input part and the 3rd power supply efferent, and wherein this multifunction chip unit is placed in the opening of this intermediate insulating layer.
Step S108: a lower cover insulating barrier (bottom cover insulating layer) is provided, and it has one the 4th power supply efferent and one the 5th power supply efferent.
Step S110: in regular turn with this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover insulating barrier storehouse ground (stackedly) combine.
Step S112: form a first side conductive layer; one second side conductive layer; and one the 3rd side conductive layer; wherein each layer side conductive layer is formed in this loam cake insulating barrier from top to bottom in regular turn; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the side of this lower cover insulating barrier; therefore this first power input part and this second source input part electrically connect to produce by this first side conductive layer; this second source efferent; the 3rd power input part and the 4th power supply efferent by this second side conductive layer produce electrically connecting, and the 3rd power supply efferent with the 5th power supply efferent by the 3rd side conductive layer to produce electric connection.
Moreover; before this step step S112; manufacture method of the present invention further comprises: form a first side and run through groove; groove is run through in one second side; and one the 3rd side runs through groove; wherein these side conduction troughs run through this loam cake insulating barrier in regular turn by the mode of boring or punching press; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and this lower cover insulating barrier forms; and this first side conductive layer forms in the inner surface that groove is run through in this first side; this second side conductive layer forms in the inner surface that groove is run through in this second side, and the 3rd side conductive layer forms in the inner surface that the 3rd side runs through groove.
See also shown in Figure 6ly, it is cut into stereogram before single for the multifunctional integration type structure of built-in type of the present invention.By among the figure as can be known, at first, mode by boring (drilling) or punching press (punching) runs through this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3 in regular turn, reaches this lower cover insulating barrier 4, to form a plurality of through hole H; Then; again conductive layer is formed in from top to bottom in regular turn this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and the inner surface of these through holes H of this lower cover insulating barrier 4; production method of the present invention last again the multifunctional integration type structure P of single built-in type cut down (shown in Fig. 1 D), so that once can be finished the multifunctional integration type structure P of a plurality of built-in types simultaneously.
But; the above; only be the detailed description and the accompanying drawing of one of specific embodiment of the best of the present invention; but feature of the present invention is not limited thereto; be not in order to restriction the present invention; protection scope of the present invention should be as the criterion with the scope of claims; all embodiment that meets the spirit variation similar of claims protection range of the present invention with it; all should be contained in the category of the present invention; any those skilled in the art in the field of the invention, can think easily and variation or modify all can be encompassed within the protection range of this case.
Claims (36)
1, a kind of multifunctional integration type structure of built-in type is characterized in that, comprising:
One loam cake insulating barrier, it has at least one first power input part;
One over current protection sheath, it is arranged at the lower end of this loam cake insulating barrier, and this over current protection sheath has a second source input part and a second source efferent;
One intermediate insulating layer, it is arranged at the lower end of this over current protection sheath, and this intermediate insulating layer has an opening;
One multifunction protection layer, it is arranged at the lower end of this intermediate insulating layer, and this multifunction protection layer has one the 3rd power input part, one the 3rd power supply efferent, reaches a multifunction chip unit that is electrically connected between the 3rd power input part and the 3rd power supply efferent, and wherein this multifunction chip unit is placed in the opening of this intermediate insulating layer;
One lower cover insulating barrier, it is arranged at the lower end of this multifunction protection layer, and this lower cover insulating barrier has one the 4th power supply efferent and one the 5th power supply efferent;
This loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover insulating barrier combine in regular turn storehouse; And
One side conductive unit, it comprises three layers of first side conductive layer insulated from each other, a second side conductive layer, and one the 3rd side conductive layer, and wherein each layer side conductive layer is formed in this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and the side of this lower cover insulating barrier from top to bottom in regular turn;
Wherein, this first power input part and this second source input part electrically connect to produce by this first side conductive layer, this second source efferent, the 3rd power input part and the 4th power supply efferent by this second side conductive layer produce electrically connecting, and the 3rd power supply efferent with the 5th power supply efferent by the 3rd side conductive layer to produce electric connection.
2, the multifunctional integration type structure of built-in type as claimed in claim 1, it is characterized in that, further comprise: a side runs through the groove unit, it comprise a first side separated from one another, three roads run through groove, a second side run through groove, and one the 3rd side run through groove, wherein this first side conductive layer forms in the inner surface that groove is run through in this first side, this second side conductive layer forms in the inner surface that groove is run through in this second side, and the 3rd side conductive layer forms in the inner surface that the 3rd side runs through groove.
3; the multifunctional integration type structure of built-in type as claimed in claim 2; it is characterized in that: this first side is run through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and first chadless institute storehouse of a side of this lower cover insulating barrier forms; this second side is run through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and second chadless institute storehouse of another opposite side of this lower cover insulating barrier forms, and the 3rd side runs through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the 3rd chadless institute storehouse of this opposite side of this lower cover insulating barrier forms.
4, the multifunctional integration type structure of built-in type as claimed in claim 1, it is characterized in that: this loam cake insulating barrier has at least one first power supply efferent and at least one grounding parts that is electrically connected at the 3rd side conductive layer that is electrically connected at this second side conductive layer, and this at least one first power input part forms in a side of the upper surface of this loam cake insulating barrier, and this at least one first power supply efferent and this at least one grounding parts form in another opposite side of the upper surface of this loam cake insulating barrier respectively.
5, the multifunctional integration type structure of built-in type as claimed in claim 1; it is characterized in that: this over current protection sheath is made up of one first electrode layer, a second electrode lay and a PTC material layer, and this PTC material layer forms between this first electrode layer and this second electrode lay.
6, the multifunctional integration type structure of built-in type as claimed in claim 5 is characterized in that: this PTC material layer is a high molecular positive temperature coefficient material layer, resistance elements, capacitance material layer or the electrical sensative material bed of material.
7, the multifunctional integration type structure of built-in type as claimed in claim 5, it is characterized in that: this second source input part is a side of this second electrode lay, this second source efferent is a side of this first electrode layer, and this first electrode layer has second insulation division that first insulation division and that is used for electrically completely cutting off with this first side conductive layer is used for and the 3rd side conductive layer is electrically isolated, this the second electrode lay has one and is used for and the 3rd insulation division that this second side conductive layer and the 3rd side conductive layer are electrically isolated, thus this first electrode layer and this second electrode lay respectively by this second insulation division and the 3rd insulation division with electrically isolated with the 3rd side conductive layer.
8, the multifunctional integration type structure of built-in type as claimed in claim 5, it is characterized in that: this second source input part is a side of this first electrode layer, this second source efferent is a side of this second electrode lay, and this first electrode layer has one and is used for and this second side conductive layer and the 3rd electrically isolated insulation division of the 3rd side conductive layer, this the second electrode lay has one and is used for and second insulation division that first insulation division and is used for and the 3rd side conductive layer is electrically isolated that this first side conductive layer is electrically isolated, thus this first electrode layer and this second electrode lay respectively by the 3rd insulation division and this second insulation division with electrically isolated with the 3rd side conductive layer.
9, the multifunctional integration type structure of built-in type as claimed in claim 1 is characterized in that: the 3rd power input part forms in the upper surface of this multifunction protection layer, and the 3rd power supply efferent forms in the upper surface of this multifunction protection layer.
10, the multifunctional integration type structure of built-in type as claimed in claim 1 is characterized in that: the 3rd power input part forms in the lower surface of this multifunction protection layer, and the 3rd power supply efferent forms in the lower surface of this multifunction protection layer.
11, the multifunctional integration type structure of built-in type as claimed in claim 1; it is characterized in that: the 3rd power input part forms in the upper surface and the lower surface of this multifunction protection layer, and the 3rd power supply efferent forms in the upper surface and the lower surface of this multifunction protection layer.
12, the multifunctional integration type structure of built-in type as claimed in claim 1 is characterized in that: this multifunction chip unit is a functional chip.
13, the multifunctional integration type structure of built-in type as claimed in claim 12 is characterized in that: this functional chip is an overvoltage protection chip, an anti-electromagnetic interference chip or an antistatic chip.
14, the multifunctional integration type structure of built-in type as claimed in claim 1 is characterized in that: this multifunction chip unit is made up of a plurality of functional chip.
15, the multifunctional integration type structure of built-in type as claimed in claim 14 is characterized in that: described a plurality of functional chips are respectively an overvoltage protection chip, an anti-electromagnetic interference chip, reach an antistatic chip.
16, the multifunctional integration type structure of built-in type as claimed in claim 14 is characterized in that: described a plurality of functional chips are electrically connected between the 3rd power input part and the 3rd power supply efferent in parallel.
17, the multifunctional integration type structure of built-in type as claimed in claim 14 is characterized in that: described a plurality of functional chips in series are electrically connected between the 3rd power input part and the 3rd power supply efferent.
18, the multifunctional integration type structure of built-in type as claimed in claim 1 is characterized in that: the 4th power supply efferent forms in the lower surface of this lower cover insulating barrier, and the 5th power supply efferent forms in the lower surface of this lower cover insulating barrier.
19, a kind of manufacture method of multifunctional integration type structure of built-in type is characterized in that, comprises the following steps:
One loam cake insulating barrier is provided, and it has at least one first power input part;
One over current protection sheath is provided, and it has a second source input part and a second source efferent;
One intermediate insulating layer is provided, and it has an opening and a conductive channel;
One multifunction protection layer is provided, it has one the 3rd power input part, one the 3rd power supply efferent, reaches a multifunction chip unit that is electrically connected between the 3rd power input part and the 3rd power supply efferent, and wherein this multifunction chip unit is placed in the opening of this intermediate insulating layer;
One lower cover insulating barrier is provided, and it has one the 4th power supply efferent and one the 5th power supply efferent;
In regular turn with this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover insulating barrier storehouse combine; And
Form a first side conductive layer; one second side conductive layer; and one the 3rd side conductive layer; wherein each layer side conductive layer is formed in this loam cake insulating barrier from top to bottom in regular turn; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the side of this lower cover insulating barrier; therefore this first power input part and this second source input part electrically connect to produce by this first side conductive layer; this second source efferent; the 3rd power input part and the 4th power supply efferent by this second side conductive layer produce electrically connecting, and the 3rd power supply efferent with the 5th power supply efferent by the 3rd side conductive layer to produce electric connection.
20; the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19; it is characterized in that: before the step of these side conductive layers of above-mentioned formation; further comprise: form a first side and run through groove; groove is run through in one second side; and one the 3rd side runs through groove; wherein these side conduction troughs run through this loam cake insulating barrier in regular turn by the mode of boring or punching press; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and this lower cover insulating barrier forms; and this first side conductive layer forms in the inner surface that groove is run through in this first side; this second side conductive layer forms in the inner surface that groove is run through in this second side, and the 3rd side conductive layer forms in the inner surface that the 3rd side runs through groove.
21; the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 20; it is characterized in that: this first side is run through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and first chadless institute storehouse of a side of this lower cover insulating barrier forms; this second side is run through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and second chadless institute storehouse of another opposite side of this lower cover insulating barrier forms, and the 3rd side runs through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the 3rd chadless institute storehouse of this opposite side of this lower cover insulating barrier forms.
22, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19, it is characterized in that: this loam cake insulating barrier has at least one first power supply efferent and at least one grounding parts that is electrically connected at the 3rd side conductive layer that is electrically connected at this second side conductive layer, and this at least one first power input part forms in a side of the upper surface of this loam cake insulating barrier, and this at least one first power supply efferent and this at least one grounding parts form in another opposite side of the upper surface of this loam cake insulating barrier respectively.
23, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19; it is characterized in that: this over current protection sheath is made up of one first electrode layer, a second electrode lay and a PTC material layer, and this PTC material layer forms between this first electrode layer and this second electrode lay.
24, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 23 is characterized in that: this PTC material layer is a high molecular positive temperature coefficient material layer, resistance elements, capacitance material layer or the electrical sensative material bed of material.
25, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 23, it is characterized in that: this second source input part is a side of this second electrode lay, this second source efferent is a side of this first electrode layer, and this first electrode layer has second insulation division that first insulation division and that is used for electrically completely cutting off with this first side conductive layer is used for and the 3rd side conductive layer is electrically isolated, this the second electrode lay has one and is used for and the 3rd insulation division that this second side conductive layer and the 3rd side conductive layer are electrically isolated, thus this first electrode layer and this second electrode lay respectively by this second insulation division and the 3rd insulation division with electrically isolated with the 3rd side conductive layer.
26, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 23, it is characterized in that: this second source input part is a side of this first electrode layer, this second source efferent is a side of this second electrode lay, and this first electrode layer has one and is used for and this second side conductive layer and the 3rd electrically isolated insulation division of the 3rd side conductive layer, this the second electrode lay has one and is used for and second insulation division that first insulation division and is used for and the 3rd side conductive layer is electrically isolated that this first side conductive layer is electrically isolated, thus this first electrode layer and this second electrode lay respectively by the 3rd insulation division and this second insulation division with electrically isolated with the 3rd side conductive layer.
27, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19; it is characterized in that: the 3rd power input part forms in the upper surface of this multifunction protection layer, and the 3rd power supply efferent forms in the upper surface of this multifunction protection layer.
28, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19; it is characterized in that: the 3rd power input part forms in the lower surface of this multifunction protection layer, and the 3rd power supply efferent forms in the lower surface of this multifunction protection layer.
29, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19; it is characterized in that: the 3rd power input part forms in the upper surface and the lower surface of this multifunction protection layer, and the 3rd power supply efferent forms in the upper surface and the lower surface of this multifunction protection layer.
30, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19 is characterized in that: this multifunction chip unit is a functional chip.
31, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 30 is characterized in that: this multifunction chip is an overvoltage protection chip, an anti-electromagnetic interference chip or an antistatic chip.
32, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19 is characterized in that: this multifunction chip unit is made up of a plurality of functional chip.
33, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 32 is characterized in that: described a plurality of functional chips are respectively an overvoltage protection chip, an anti-electromagnetic interference chip, reach an antistatic chip.
34, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 32 is characterized in that: described a plurality of functional chips are electrically connected between the 3rd power input part and the 3rd power supply efferent in parallel.
35, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 32 is characterized in that: described a plurality of functional chips in series are electrically connected between the 3rd power input part and the 3rd power supply efferent.
36, the manufacture method of the multifunctional integration type structure of built-in type as claimed in claim 19, it is characterized in that: the 4th power supply efferent forms in the lower surface of this lower cover insulating barrier, and the 5th power supply efferent forms in the lower surface of this lower cover insulating barrier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710148033A CN100594607C (en) | 2007-08-29 | 2007-08-29 | Built-in type multifunctional conformity type structure and fabricating method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200710148033A CN100594607C (en) | 2007-08-29 | 2007-08-29 | Built-in type multifunctional conformity type structure and fabricating method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101378049A CN101378049A (en) | 2009-03-04 |
| CN100594607C true CN100594607C (en) | 2010-03-17 |
Family
ID=40421504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710148033A Expired - Fee Related CN100594607C (en) | 2007-08-29 | 2007-08-29 | Built-in type multifunctional conformity type structure and fabricating method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100594607C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102412250A (en) * | 2011-11-04 | 2012-04-11 | 日月光半导体制造股份有限公司 | Semiconductor packaging structure, integrated passive element and fabrication method thereof |
| CN111415925B (en) * | 2019-01-07 | 2023-01-24 | 台达电子企业管理（上海）有限公司 | Power module and preparation method thereof |
| CN111415908B (en) | 2019-01-07 | 2022-02-22 | 台达电子企业管理（上海）有限公司 | Power module, chip embedded type packaging module and preparation method |
| US11676756B2 (en) | 2019-01-07 | 2023-06-13 | Delta Electronics (Shanghai) Co., Ltd. | Coupled inductor and power supply module |
| CN111415909B (en) | 2019-01-07 | 2022-08-05 | 台达电子企业管理（上海）有限公司 | Multi-chip packaged power module |
| US11316438B2 (en) | 2019-01-07 | 2022-04-26 | Delta Eletronics (Shanghai) Co., Ltd. | Power supply module and manufacture method for same |
-
2007
- 2007-08-29 CN CN200710148033A patent/CN100594607C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN101378049A (en) | 2009-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7715164B2 (en) | Embedded type multifunctional integrated structure and method for manufacturing the same | |
| US7741709B2 (en) | Embedded type multifunctional integrated structure for integrating protection components and method for manufacturing the same | |
| CN100594607C (en) | Built-in type multifunctional conformity type structure and fabricating method thereof | |
| US8179210B2 (en) | Electrical multilayer component with shielding and resistance structures | |
| US7675729B2 (en) | Internally shielded energy conditioner | |
| CN101714681B (en) | Electro-magnetic bandgap structure | |
| US7609143B2 (en) | Multi-layer type over-current and over-temperature protection structure and method for manufacturing the same | |
| CN103026546B (en) | Band-pass filter module and module substrate | |
| CN101414602A (en) | Inner imbedded type multifunctional integration type structure for integration protection element and preparation method thereof | |
| CN102737840A (en) | Feedthrough multilayer capacitor | |
| KR101229557B1 (en) | Electrical multilayer component with reduced parasitic capacitance | |
| CN106165117A (en) | For having the backside contact layer that the battery of improvement connects the photovoltaic module of topology | |
| US8760848B2 (en) | Concentrated capacitor assembly | |
| EP3557638B1 (en) | Integrated high voltage capacitor | |
| US7443267B2 (en) | Low-pass filter and low-pass filter array | |
| CN101414499A (en) | Multi-layer type over-current and over-temperature protection structure, and preparation method thereof | |
| CN207572353U (en) | Thin-film device | |
| CN208143194U (en) | Inductor with ESD defencive function | |
| US11177070B2 (en) | Electric shock protection device, method for manufacturing same, and portable electronic device having same | |
| US6600209B1 (en) | Mesh capacitor structure in an integrated circuit | |
| CN101615712A (en) | Resonator and band pass filter | |
| KR20090098682A (en) | Penetrating condenser and penetrating condenser embeded structure | |
| EP2670212B1 (en) | A half bridge induction heating generator and a capacitor assembly for a half bridge induction heating generator | |
| CN1607656A (en) | Method and apparatus for integrated noise decoupling | |
| KR20180035440A (en) | ESD protection device and method thereof and mobile electronic device with the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100317 Termination date: 20120829 |