CN101414602A - Inner imbedded type multifunctional integration type structure for integration protection element and preparation method thereof - Google Patents
Inner imbedded type multifunctional integration type structure for integration protection element and preparation method thereof Download PDFInfo
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- CN101414602A CN101414602A CNA2007101823275A CN200710182327A CN101414602A CN 101414602 A CN101414602 A CN 101414602A CN A2007101823275 A CNA2007101823275 A CN A2007101823275A CN 200710182327 A CN200710182327 A CN 200710182327A CN 101414602 A CN101414602 A CN 101414602A
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Abstract
The invention relates to a built-in multifunctional integrated structure of an integrated protection element and a fabrication method thereof. In the method, more than two passive elements are integrated on an element structure by a multi-layer circuit board design concept, the obtained finished product is adhered to a substrate in the manner of surface adhesion so as to be applied to an universal serial bus (USB) terminal, thus achieving the purpose of protecting an electronic device which uses the USB. Therefore, the built-in multifunctional integrated structure can have the functions of overcurrent protection, overvoltage protection and static electricity resistance at the same time. Consequently, the built-in multifunctional integrated structure can effectively integrate two or a plurality of passive elements to enhance the functionality of the passive elements, and further can effectively reduce the space occupied by the passive elements on a circuit board and reduce the number of soldered joints.
Description
Technical field
The present invention relates to a kind of multifunctional integration type structure and preparation method thereof, refer to a kind of built-in type multifunctional integration type structure of integrating protection component and preparation method thereof especially.
Background technology
Following electronic product will be towards having light, thin, short, little function, so that electronic product can more be tending towards miniaturization.Passive device (passive component) shared area in electronic product is again the hugest, so integrated passive element effectively will make that electronic product can reach gently, thin, short, little function.
Yet the design of existing passive device is all based on simple function.Therefore, when the passive device that difference in functionality need be installed when electronic product was protected electronic product, prior art only can be provided with the passive device of a plurality of simple functions in electronic product.Therefore the existing practice not only expends the cost of manufacturing, takies the volume of electronic product integral body especially.
Summary of the invention
Technical problem to be solved by this invention, promptly goal of the invention is to propose a kind of built-in type multifunctional integration type structure of integrating protection component and preparation method thereof.The present invention utilizes the notion of circuit board multilayer design; to be integrated on the element structure above two or more passive devices; the finished product of finishing will be adhered on the substrate in the mode of face adhesion; to be applied to universal serial bus (Universal Serial Bus; USB) end, and reach the purpose that the electronic installation of universal serial bus (USB) is used in protection.
For reaching above-mentioned purpose; according to wherein a kind of scheme of the present invention; a kind of built-in type multifunctional integration type structure of integrating protection component is provided; it comprises: a loam cake insulating barrier; one over current protection sheath (over-current protection layer); one intermediate insulating layer; one multifunction protection layer (multifunctional protection layer); an and lower cover insulating barrier; this loam cake insulating barrier wherein; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and this lower cover insulating barrier is stacked in regular turn; and this multifunction protection layer has one first functional unit and one second functional unit; thus abnormal electric current stream through first functional unit of this over current protection sheath and this multifunction protection layer being sent to an earth terminal, and an abnormal signal stream through second functional unit of this multifunction protection layer to be sent to this earth terminal.
In order to solve the problems of the technologies described above; according to wherein a kind of scheme of the present invention; a kind of built-in type multifunctional integration type structure of integrating protection component is provided, and it comprises: a loam cake insulating barrier, an over current protection sheath, an intermediate insulating layer, a multifunction protection layer, a lower cover insulating barrier, an and side conductive unit.
Wherein, this loam cake insulating barrier has one first power input part and two first signal input parts.This over current protection sheath is arranged at the lower end of this loam cake insulating barrier, and this over current protection sheath has a second source input part and one first power supply efferent.This intermediate insulating layer is arranged at the lower end of this over current protection sheath.This multifunction protection layer is arranged at the lower end of this intermediate insulating layer, and this multifunction protection layer has one the 3rd power input part, one first grounding parts, and is electrically connected at first functional unit between the 3rd power input part and this first grounding parts, two second signal input parts, and second functional unit that is electrically connected between each second signal input part and this first grounding parts.
Moreover this lower cover insulating barrier is arranged at the lower end of this multifunction protection layer, and this lower cover insulating barrier has a second source efferent, one second grounding parts, reaches two first signal efferents.This side conductive unit comprises five layers of first side conductive layer insulated from each other, a second side conductive layer, one the 3rd side conductive layer, a four side conductive layer, and one the 5th side conductive layer, and wherein each layer side conductive layer is formed in this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and the side of this lower cover insulating barrier from top to bottom in regular turn.Wherein, this first power input part and this second source input part electrically connect to produce by this first side conductive layer, this first power supply efferent, the 3rd power input part and this second source efferent electrically connect to produce by this second side conductive layer, one first signal input part wherein, wherein one second signal input part electrically connects to produce by the 3rd side conductive layer with one first signal efferent wherein, other one first signal input part, other one second signal input part and other one first signal efferent electrically connect to produce by this four side conductive layer, and this first grounding parts and this second grounding parts electrically connect to produce by the 5th side conductive layer.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present invention, a kind of manufacture method of integrating the built-in type multifunctional integration type structure of protection component is provided, its step comprises: at first, one loam cake insulating barrier is provided, and it has one first power input part and two first signal input parts; Then, provide an over current protection sheath, it is arranged at the lower end of this loam cake insulating barrier, and this over current protection sheath has a second source input part and one first power supply efferent; Then, provide an intermediate insulating layer, it is arranged at the lower end of this over current protection sheath; Next; one multifunction protection layer is provided; it is arranged at the lower end of this intermediate insulating layer, and this multifunction protection layer has one the 3rd power input part, one first grounding parts, and is electrically connected at first functional unit between the 3rd power input part and this first grounding parts, two second signal input parts, and second functional unit that is electrically connected between each second signal input part and this first grounding parts.
And then, provide a lower cover insulating barrier, it is arranged at the lower end of this multifunction protection layer, and this lower cover insulating barrier has a second source efferent, one second grounding parts, reaches two first signal efferents; Then, in regular turn with this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover stacked dielectric layer ground (stackedly) combine; Then; form a first side conductive layer, a second side conductive layer, one the 3rd side conductive layer, a four side conductive layer, and one the 5th side conductive layer, wherein each layer side conductive layer is formed in this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and the side of this lower cover insulating barrier from top to bottom in regular turn.
Therefore, the present invention can have overcurrent protection, overvoltage protection simultaneously, reach anlistatig function.So the present invention can integrate two or more above passive devices effectively and increase that it is functional, moreover the present invention can reduce the shared volume of passive device on the circuit board effectively, and reduces the number of solder joint.
Reach technology, means and the effect that predetermined purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, go deep into and concrete understanding when getting one thus, yet appended graphic reference and the explanation usefulness of only providing not is to be used for the present invention is limited.
Description of drawings
Figure 1A integrates the three-dimensional exploded view of first embodiment of the built-in type multifunctional integration type structure of protection component for the present invention;
Figure 1B is the stereogram of another angle of the over current protection sheath of first embodiment of the invention;
Fig. 1 C integrates the three-dimensional combination figure of first embodiment of the built-in type multifunctional integration type structure of protection component for the present invention;
Fig. 2 A is the stereogram of the over current protection sheath of second embodiment of the invention;
Fig. 2 B is the stereogram of another angle of the over current protection sheath of second embodiment of the invention;
Fig. 3 A is the stereogram of the multifunction protection layer of third embodiment of the invention;
Fig. 3 B is the stereogram of the lower cover insulating barrier of third embodiment of the invention;
Fig. 4 is the stereogram of the multifunction protection layer of fourth embodiment of the invention;
Fig. 5 integrates the flow chart of manufacture method of the built-in type multifunctional integration type structure of protection component for the present invention;
The built-in type multifunctional integration type structure that Fig. 6 integrates protection component for the present invention is cut into the stereogram before single.
Symbol description among the figure
[first embodiment]
1 loam cake insulating barrier
10a first chadless
10b second chadless
10c the 3rd chadless
10d the 4th chadless
10e the 5th chadless
10P first power input part
10S
1The first signal input part
10S
2
2 over current protection sheaths
2A first electrode layer
The 2B the second electrode lay
The positive temperature of 2C is counted material layer
20a first chadless
20b second chadless
20c the 3rd chadless
20d the 4th chadless
20e the 5th chadless
20P second source input part
The 21P first power supply efferent
L1 first insulation division
L2 second insulation division
The M intermediate insulating layer
Ma first chadless
Mb second chadless
Mc the 3rd chadless
Md the 4th chadless
Me the 5th chadless
The M10 open cells
M100 first opening
M110 second opening
3 multifunction protection layers
30a first chadless
30b second chadless
30c the 3rd chadless
30d the 4th chadless
30e the 5th chadless
30P the 3rd power input part
30G first grounding parts
30S
1The second signal input part
30S
2
C1 first functional unit
C2 second functional unit
4 lower cover insulating barriers
40a first chadless
40b second chadless
40c the 3rd chadless
40d the 4th chadless
40e the 5th chadless
40P second source efferent
40G second grounding parts
40S
1The first signal efferent
40S
2
5 side conductive units
51 first side conductive layers
52 second side conductive layers
53 the 3rd side conductive layers
54 four side conductive layers
55 the 5th side conductive layers
6 sides run through the groove unit
Groove is run through in 61 first sides
Groove is run through in 62 second sides
63 the 3rd sides run through groove
64 four sides run through groove
65 the 5th sides run through groove
I
1Electric current
I
GAbnormal electric current
S1, S2 signal
S
GAbnormal signal
[second embodiment]
2 ' over current protection sheath
2A ' first electrode layer
2B ' the second electrode lay
The positive temperature of 2C ' is counted material layer
20P ' second source input part
21P ' first power supply the efferent
L1 ' first insulation division
L2 ' second insulation division
3 ' multifunction protection layer
C1 ' first functional unit
C2 ' second functional unit
30P ' the 3rd power input part
30G ' first grounding parts
30S
1' the second signal input part
30S
2′
4 ' lower cover insulating barrier
41 ' open cells
410 ' the first openings
411 ' the second openings
[the 3rd embodiment]
C2 " second functional unit
C20 " functional chip
[before being cut into single]
P built-in type multifunctional integration type structure
1 " loam cake insulating barrier
2 " over current protection sheath
M " intermediate insulating layer
3 " multifunction protection layer
4 " lower cover insulating barrier
The H through hole
Embodiment
See also shown in Figure 1A to Fig. 1 C, its be respectively the present invention integrate protection component the built-in type multifunctional integration type structure first embodiment three-dimensional exploded view, first embodiment of the invention the over current protection sheath another angle stereogram, and the present invention integrate the three-dimensional combination figure of first embodiment of the built-in type multifunctional integration type structure of protection component.
Please again with reference to shown in Figure 1A and Fig. 1 C, a kind of built-in type multifunctional integration type structure of integrating protection component provided by the present invention comprises: a loam cake insulating barrier 1, an over current protection sheath (over-current protection layer) 2, one intermediate insulating layer M, a multifunction protection layer (multifunctional protection layer) 3, one lower cover insulating barrier 4, an and side conductive unit 5.Wherein, this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and this lower cover insulating barrier 4 be stacked in regular turn, and this side conductive unit 5 comprises five layers of first side conductive layer 51 insulated from each other, a second side conductive layer 52, one the 3rd side conductive layer 53, a four side conductive layer 54, and one the 5th side conductive layer 55.
Wherein, four of this loam cake insulating barrier 1 sides have one first chadless (first halfhole) 10a, one second chadless (second halfhole) 10b, one the 3rd chadless (thirdhalf hole) 10c, one the 4th chadless (fourth half hole) 10d respectively, reach one the 5th chadless (fifth half hole) 10e.In addition, this loam cake insulating barrier 1 have first a power input part 10P who is electrically connected at this first side conductive layer 51, and two be electrically connected at the 3rd respectively, the first signal input part (10S of four side conductive layer (53,54)
1, 10S
2).This first power input part 10P and the described first signal input part (10S
1, 10S
2) all form in the upper surface of this loam cake insulating barrier 1.
Moreover this over current protection sheath 2 is arranged at the lower end of this loam cake insulating barrier 1.Four sides of this over current protection sheath 2 have one first chadless (first half hole) 20a, one second chadless (second half hole) 20b, one the 3rd chadless (third half hole) 20c, one the 4th chadless (fourth half hole) 20d respectively, reach one the 5th chadless (fifth halfhole) 20e.In addition; this over current protection sheath 2 by one first electrode layer (first electrodelayer) 2A, a second electrode lay (second electrode layer) 2B, and a PTC material layer (positive temperature coefficient material layer) 2C is formed, and this PTC material layer 2C forms between this first electrode layer 2A and this second electrode lay 2B.Wherein, this PTC material layer 2C can be a high molecular positive temperature coefficient (Polymer Positive Temperature Coefficient, PPTC) material layer, resistance elements, capacitance material layer or the electrical sensative material bed of material.
Moreover this over current protection sheath 2 has the first power supply efferent 21P (shown in Figure 1B) that a second source input part 20P and who is electrically connected at this first side conductive layer 51 is electrically connected at this second side conductive layer 52.This second source input part 20P is the side of this first electrode layer 2A, this first power supply efferent 21P is the side of this second electrode lay 2B, and this first electrode layer 2A have one be used for this second, the 3rd, the the 4th and the 5th side conductive layer (52,53,54,55) electrically isolated first insulation division (first insulatingportion) L1, this second electrode lay 2B have one be used for this first, the 3rd, the the 4th and the 5th side conductive layer (51,53,54,55) second insulation division (secondinsulating portion) L2 (shown in Figure 1B) that electrically completely cuts off.Therefore, this first electrode layer 2A by the described first insulation division L1 with this second, third, the 4th and the 5th side conductive layer (52,53,54,55) produces electrically isolated.This second electrode lay 2B completely cuts off to produce electrically with this first, the 3rd, the 4th and the 5th side conductive layer (51,53,54,55) by the described second insulation division L2.
In addition; this intermediate insulating layer M is arranged at the lower end of this over current protection sheath 2; and this intermediate insulating layer M has an open cells (opening unit) M10, and this open cells M10 comprises one first opening (first opening) M100 and one second opening (second opening) M110.And four sides of this intermediate insulating layer M have one first chadless (firsthalf hole) Ma, one second chadless (second half hole) Mb, one the 3rd chadless (third half hole) Mc, one the 4th chadless (fourth half hole) Md respectively, reach one the 5th chadless (fifth halfhole) Me.
Moreover this multifunction protection layer 3 is arranged at the lower end of this intermediate insulating layer M.Four sides of this multifunction protection layer 3 have one first chadless (first half hole) 30a, one second chadless (second half hole) 30b, one the 3rd chadless (third half hole) 30c, one the 4th chadless (fourth half hole) 30d respectively, reach one the 5th chadless (fifth halfhole) 30e.In addition, this multifunction protection layer 3 has the first grounding parts 30G, that the 3rd a power input part 30P, who is electrically connected at this second side conductive layer 52 is electrically connected at the 5th side conductive layer 55 and is electrically connected at that the first functional unit C1 between the 3rd power input part 30P and this first grounding parts 30G, two are electrically connected at the 3rd respectively, the second signal input part (30S of four side conductive layer (53,54)
1, 30S
2), and one be electrically connected at each second signal input part (30S
1Or 30S
2) and this first grounding parts 30G between the second functional unit C2.
In addition, in the present embodiment, this first functional unit C1, this second functional unit C2, the 3rd power input part 30P, this first grounding parts 30G, and the described second signal input part (30S
1, 30S
2) all form in the upper surface (top surface) of this multifunction protection layer 3.This first functional unit C1 is a functional chip (functional chip); and this second functional unit C2 is a groove (groove); wherein this functional chip is an overvoltage protection (Over-Voltage Protection; OVP) chip; and the width of this groove (width) is between 10～100 μ m, and the degree of depth of this groove (depth) is between 10～500 μ m.In addition, this first opening M100 is used for ccontaining this first functional unit C1 (that is this functional chip), and this second opening M110 is used to expose this second functional unit C2 (that is part of this groove).
In addition, this lower cover insulating barrier 4 is arranged at the lower end of this multifunction protection layer 3.Four sides of this lower cover insulating barrier 4 have one first chadless (first half hole) 40a, one second chadless (second half hole) 40b, one the 3rd chadless (third half hole) 40c, one the 4th chadless (fourth halfhole) 40d respectively, reach one the 5th chadless (fifth halfhole) 40e.In addition, this lower cover insulating barrier 4 have a second source efferent 40P, who is electrically connected at this second side conductive layer 52 be electrically connected at the 5th side conductive layer 55 the second grounding parts 40G, and two be electrically connected at the 3rd respectively, the first signal efferent (40S of four side conductive layer (53,54)
1, 40S
2).And, this second source efferent 40P, this second grounding parts 40G, and the described first signal efferent (40S
1, 40S
2) all form in the lower surface of this lower cover insulating barrier 4.
Moreover; please cooperate shown in Fig. 1 C, each layer side conductive layer (51,52,53,54,55) is formed in this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3 from top to bottom in regular turn, reaches the side of this lower cover insulating barrier 4.
In addition, the first chadless 30a of the first chadless Ma of the first chadless 20a of the first chadless 10a of this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and the first chadless 40a of this lower cover insulating barrier 4 be overlapped into a first side and run through groove 61; The second chadless Mb of the second chadless 10b of this loam cake insulating barrier 1, the second chadless 20b of this over current protection sheath 2, this intermediate insulating layer M, the second chadless 30b of this multifunction protection layer 3, and the second chadless 40b of this lower cover insulating barrier 4 be overlapped into a second side and run through groove 62; The 3rd chadless Mc of the 3rd chadless 10c of this loam cake insulating barrier 1, the 3rd chadless 20c of this over current protection sheath 2, this intermediate insulating layer M, the 3rd chadless 30c of this multifunction protection layer 3, and the 3rd chadless 40c of this lower cover insulating barrier 4 be overlapped into one the 3rd side and run through groove 63; The 4th chadless Md of the 4th chadless 10d of this loam cake insulating barrier 1, the 4th chadless 20d of this over current protection sheath 2, this intermediate insulating layer M, the 4th chadless 30d of this multifunction protection layer 3, and the 4th chadless 40d of this lower cover insulating barrier 4 be overlapped into a four side and run through groove 64; The 5th chadless Me of the 5th chadless 10e of this loam cake insulating barrier 1, the 5th chadless 20e of this over current protection sheath 2, this intermediate insulating layer M, the 5th chadless 30e of this multifunction protection layer 3, and the 5th chadless 40e of this lower cover insulating barrier 4 be overlapped into one the 5th side and run through groove 65.
Therefore, this first side run through groove 61 by a plurality of be formed separately this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and first chadless (10a, 20a, Ma, 30a, 40a) of the wherein side of this lower cover insulating barrier 4 piled up and formed.This second side run through groove 62 by a plurality of be formed separately this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and second chadless (10b, 20b, Mb, 30b, 40b) of the wherein side of this lower cover insulating barrier 4 piled up and formed.The 3rd side run through groove 63 by a plurality of be formed separately this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and the 3rd chadless (10c, 20c, Mc, 30c, 40c) of the wherein side of this lower cover insulating barrier 4 piled up and formed.This four side run through groove 64 by a plurality of be formed separately this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and the 4th chadless (10d, 20d, Md, 30d, 40d) of the wherein side of this lower cover insulating barrier 4 piled up and formed.The 5th side run through groove 65 by a plurality of be formed separately this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and the 5th chadless (10e, 20e, Me, 30e, 40e) of the wherein side of this lower cover insulating barrier 4 piled up and formed.
Moreover, groove 61 is run through in a first side separated from one another, above-mentioned five roads, groove 62 is run through in one second side, one the 3rd side runs through groove 63, one four side runs through groove 64, one the 5th side runs through groove 65 and is combined into a side and runs through groove unit 6, and this first side conductive layer 51 forms in the inner surface that groove 61 is run through in this first side, this second side conductive layer 52 forms in the inner surface that groove 62 is run through in this second side, the 3rd side conductive layer 53 forms in the inner surface that the 3rd side runs through groove 63, this four side conductive layer 54 forms in the inner surface that this four side runs through groove 64, and the 5th side conductive layer 55 forms in the inner surface that the 5th side runs through groove 65.
Therefore, this first power input part 10P and this second source input part 20P electrically connect to produce by this first side conductive layer 51, this first power supply efferent 21P, the 3rd power input part 30P and this second source efferent 40P electrically connect to produce by this second side conductive layer 52, wherein one first signal input part 10S
1, one second signal input part 30S wherein
1With one first signal efferent 40S wherein
1Electrically connect other one first signal input part 10S by the 3rd side conductive layer 53 to produce
2, other one second signal input part 30S
2With other one first signal efferent 40S
2Electrically connect to produce by this four side conductive layer 54, this first grounding parts 30G and this second grounding parts 40G electrically connect to produce by the 5th side conductive layer 55.
Please again referring to figs. 1A to shown in Fig. 1 C, the arrow among the described figure is represented electric current I
1And the direction of signal (S1, S2).
Wherein, electric current I
1Main flow path at each layer (from this loam cake insulating barrier 1 to this lower cover insulating barrier 4) is as described below:
Ground floor (this loam cake insulating barrier 1): by this first side conductive layer 51, electric current I
1Flow to the second source input part 20P of this over current protection sheath 2 from the first power input part 10P of this loam cake insulating barrier 1.
The second layer (this over current protection sheath 2): electric current I
1Pass through this first electrode layer 2 in regular turn
A, this PTC material layer 2C and this second electrode lay 2B, and flow to this first power supply efferent 21P from this second source input part 20P.Therefore, by the special material characteristic of this PTC material layer 2C, so that the present invention has overcurrent protection (Over-CurrentProtection, function OCP).
The 3rd layer (this intermediate insulating layer M): by this second side conductive layer 52, electric current I
1Flow to the 3rd power input part 30P of this multifunction protection layer from this first power supply efferent 21P.
The 4th layer (this multifunction protection layer 3): according to the function setting of this first functional unit C1, with the decision electric current I
1The flow direction.Therefore, normal electric current I
1Can directly flow to down one deck; And abnormal electric current I
GThen flow to this first grounding parts 30G through this first functional unit C1 from the 3rd power input part 30P.For example: this first functional unit C1 is an overvoltage protection (Over-Voltage Protection, an OVP) chip, and suppose that the load that this overvoltage protection chip sets is 5 volts (volt).Therefore, when electric current is less than 5 volts, then normally export this electric current; When electric current during, then make this electric current flow through this overvoltage protection chip and be sent to earth terminal greater than 5 volts.
Layer 5 (this lower cover insulating barrier 4): by this second side conductive layer 52, so that normal electric current I
1Flow to the second source efferent 40P of this lower cover insulating barrier 4; Perhaps, by the 5th side conductive layer 55, so that abnormal electric current I
GFlow to the second grounding parts 40G of this lower cover insulating barrier 4 and be sent to earth terminal from this first grounding parts 30G.
Wherein, signal (S1, S2) is as described below at the main flow path of each layer (from this loam cake insulating barrier 1 to this lower cover insulating barrier 4):
Ground floor (this loam cake insulating barrier 1): by the 3rd, four side conductive layer (53,54), make two signals (S1, S2) respectively from two first signal input part (10S of this loam cake insulating barrier 1
1, 10S
2) flow to two second signal input part (30S of this multifunction protection layer 3
1, 30S
2)
The 4th layer (this multifunction protection layer 3): according to the function setting of this second functional unit C2, with the flow direction of decision signal (S1, S2).Therefore, normal signal (S1, S2) can directly flow to down one deck; And abnormal signal S
GThen respectively from these two second signal input part (30S
1, 30S
2) flow to this first grounding parts 30G through this second functional unit C2.
Layer 5 (this lower cover insulating barrier 4): by the 3rd, four side conductive layer (53,54), so that normal signal (S1, S2) flows to the described first signal efferent (40S of this lower cover insulating barrier 4
1, 40S
2); Perhaps, by the 5th side conductive layer 55, so that abnormal electric current S
GFlow to the second grounding parts 40G of this lower cover insulating barrier 4 and be sent to earth terminal from this first grounding parts 30G.
See also shown in Fig. 2 A and Fig. 2 B, it is respectively stereogram, and the stereogram of another angle of the over current protection sheath of second embodiment of the invention of the over current protection sheath of second embodiment of the invention.By among the figure as can be known, second embodiment is with first the different of embodiment maximum: a second source input part 20P ' is the side of this second electrode lay 2B ', this first power supply efferent 21P ' is the side of this first electrode layer 2A ', and this first electrode layer 2A ' have one be used for this first, the 3rd, the the 4th and the 5th side conductive layer (51,53,54,55) electrically isolated first insulation division (first insulating portion) L1 ' (shown in Fig. 2 A), this second electrode lay 2B ' have one be used for this second, the 3rd, the the 4th and the 5th side conductive layer (52,53,54,55) second insulation division (the second insulating portion) L2 ' (shown in Fig. 2 B) that electrically completely cuts off.Therefore, this first electrode layer 2A ' completely cuts off to produce electrically with this first, the 3rd, the 4th and the 5th side conductive layer (51,53,54,55) by the described first insulation division L1 '.This second electrode lay 2B ' by the described second insulation division L2 ' with this second, third, the 4th and the 5th side conductive layer (52,53,54,55) produces electrically isolated.
Therefore, the current path of the second layer of second embodiment (this over current protection sheath 2 ') is: electric current I
2Reach this first electrode layer 2A ' through this second electrode lay 2B ', a PTC material layer 2C ' in regular turn, and flow to this first power supply efferent 21P ' from this second source input part 20P '.
See also shown in Fig. 3 A and Fig. 3 B, it is respectively stereogram, and the stereogram of the lower cover insulating barrier of third embodiment of the invention of the multifunction protection layer of third embodiment of the invention.By among the described figure as can be known, the difference of the 3rd embodiment and the first embodiment maximum is: one first functional unit C1 ', one second functional unit C2 ', one the 3rd power input part 30P ', one first grounding parts 30G ', and two second signal input part (30S
1', 30S
2') all form in this multifunction protection layer 3 ' lower surface (top surface).Moreover, a lower cover insulating barrier 4 ' a have open cells (opening unit) 41 ', this open cells 41 ' comprise one first opening 410 ' and one second opening 411 '.This first opening 410 ' be used for ccontaining this first functional unit C1 ' (that is this functional chip), and this second opening 411 ' be used to expose this second functional unit C2 ' (that is part of this groove).
Therefore, the present invention also can be in conjunction with first embodiment and the 3rd embodiment, and make this first functional unit C1, this second functional unit C2, the 3rd power input part 30P, this first grounding parts 30G, and the described second signal input part (30S
1, 30S
2) all form in the upper surface (top surface) (shown in first embodiment of Figure 1A) of this multifunction protection layer 3, and make this first functional unit C1 ', this second functional unit C2 ', the 3rd power input part 30P ', this first grounding parts 30G ', and the described second signal input part (30S simultaneously
1', 30S
2') all form in this multifunction protection layer 3 ' lower surface (shown in the 3rd embodiment of Fig. 3 A).
See also shown in Figure 4ly, it is the stereogram of the multifunction protection layer of fourth embodiment of the invention.By among the figure as can be known, the 4th embodiment is with first the different of embodiment maximum: one second functional unit C2 " being two functional chips (functional chip) C20 ", and above-mentioned two functional chip C20 " be two antistatic (Anti-Electrostatic Discharge; anti-ESD) chip, and one second opening (figure do not show) is used for ccontaining above-mentioned two functional chip C2 ".
See also shown in Figure 5ly, it integrates the flow chart of manufacture method of the built-in type multifunctional integration type structure of protection component for the present invention.By in the flow chart as can be known, a kind of manufacture method of integrating the built-in type multifunctional integration type structure of protection component provided by the present invention is example (please cooperate and consult shown in Figure 1A to Fig. 1 C) with first embodiment, its step comprises:
Step S100: a loam cake insulating barrier 1 is provided, and it has one first power input part 10P and two first signal input part (10S
1, 10S
2);
Step S102: an over current protection sheath 2 is provided, and it is arranged at the lower end of this loam cake insulating barrier 1, and this over current protection sheath 2 has a second source input part 20P and one first power supply efferent 21P;
Step S104: an intermediate insulating layer M is provided, and it is arranged at the lower end of this over current protection sheath 2;
Step S106: a multifunction protection layer 3 is provided; it is arranged at the lower end of this intermediate insulating layer M, and this multifunction protection layer 3 has one the 3rd power input part 30P, one first grounding parts 30G, and is electrically connected at the first functional unit C1 between the 3rd power input part 30P and this first grounding parts 30G, two second signal input part (30S
1, 30S
2), and one be electrically connected at each second signal input part (30S
1, 30S
2) and this first grounding parts 30G between the second functional unit C2;
Step S108: a lower cover insulating barrier 4 is provided, and it is arranged at the lower end of this multifunction protection layer 3, and this lower cover insulating barrier 4 has a second source efferent 40P, one second grounding parts 40G, reaches two first signal efferent (40S
1, 40S
2);
Step S110: in regular turn with this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and this lower cover insulating barrier 4 pile up ground (stackedly) and combine; And
Step S112: form a first side conductive layer 51, a second side conductive layer 52, one the 3rd side conductive layer 53, a four side conductive layer 54, and one the 5th side conductive layer 55, wherein each layer side conductive layer (51,52,53,54,55) is formed in this loam cake insulating barrier 1, this over current protection sheath 2, this intermediate insulating layer M, this multifunction protection layer 3, and the side of this lower cover insulating barrier 4 from top to bottom in regular turn.
Therefore, this first power input part 10P and this second source input part 20P electrically connect to produce by this first side conductive layer 51, this first power supply efferent 21P, the 3rd power input part 30P and this second source efferent 40P electrically connect to produce by this second side conductive layer 52, wherein one first signal input part 10S
1, one second signal input part 30S wherein
1With one first signal efferent 40S wherein
1Electrically connect other one first signal input part 10S by the 3rd side conductive layer 53 to produce
2, other one second signal input part 30S
2With other one first signal efferent 40S
2Electrically connect to produce by this four side conductive layer 54, this first grounding parts 30G and this second grounding parts 40G electrically connect to produce by the 5th side conductive layer 55.
Moreover; before this step step S112; manufacture method of the present invention further comprises: form a first side and run through groove 61; groove 62 is run through in one second side; one the 3rd side runs through groove 63; one four side runs through groove 64; one the 5th side runs through groove 65; wherein said side conduction trough (61; 62; 63; 64; 65) mode by boring or punching press runs through this loam cake insulating barrier 1 in regular turn; this over current protection sheath 2; this intermediate insulating layer M; this multifunction protection layer 3; and this lower cover insulating barrier 4 forms; and this first side conductive layer 51 forms in the inner surface that groove 61 is run through in this first side; this second side conductive layer 52 forms in the inner surface that groove 62 is run through in this second side; the 3rd side conductive layer 53 forms in the inner surface that the 3rd side runs through groove 63; this four side conductive layer 54 forms in the inner surface that this four side runs through groove 64, and the 5th side conductive layer 55 forms in the inner surface that the 5th side runs through groove 65.
See also shown in Figure 6ly, its built-in type multifunctional integration type structure of integrating protection component for the present invention is cut into the stereogram before single.By among the figure as can be known, at first, mode by boring (drilling) or punching press (punching) run through in regular turn this loam cake insulating barrier 1 ", this over current protection sheath 2 ", this intermediate insulating layer M ", this multifunction protection layer 3 ", and this lower cover insulating barrier 4 ", to form a plurality of through holes (penetrating hole) H; Then; again conductive layer is formed in from top to bottom in regular turn this loam cake insulating barrier 1 ", this over current protection sheath 2 ", this intermediate insulating layer M ", this multifunction protection layer 3 ", and this lower cover insulating barrier 4 " the inner surface of described through hole H; again the built-in type multifunctional integration type structure P of single integration protection component is cut down (shown in Fig. 1 C) at last, so that production method of the present invention once can be finished the built-in type multifunctional integration type structure P of a plurality of integration protection components simultaneously.
In sum; the present invention utilizes the notion of circuit board multilayer design; to be integrated on the element structure above two or more passive devices; and the finished product of finishing will be adhered on the substrate in the mode of face adhesion; to be applied to universal serial bus (Universal Serial Bus; USB) end, and reach the purpose that the electronic installation of universal serial bus (USB) is used in protection.Therefore, the present invention can have overcurrent protection, overvoltage protection simultaneously, reach anlistatig function.So the present invention can integrate two or more above passive devices effectively and increase that it is functional, moreover the present invention can reduce the shared long-pending body of passive device on the circuit board effectively, and reduces the number of solder joint.
The above, only be the detailed description and the accompanying drawing of the specific embodiment of one of the best of the present invention, feature of the present invention is not limited thereto, be not in order to restriction the present invention, all scopes of the present invention should be as the criterion with the scope of claims, all closing in the embodiment of the spirit variation similar of claims of the present invention with it, all should be contained in the category of the present invention, any those skilled in the art in the field of the invention, can think easily and variation or modify all can be encompassed in the claim of the present invention.
Claims (43)
1. a built-in type multifunctional integration type structure of integrating protection component is characterized in that, comprising:
One loam cake insulating barrier, it has one first power input part and two first signal input parts;
One over current protection sheath, it is arranged at the lower end of this loam cake insulating barrier, and this over current protection sheath has a second source input part and one first power supply efferent;
One intermediate insulating layer, it is arranged at the lower end of this over current protection sheath;
One multifunction protection layer, it is arranged at the lower end of this intermediate insulating layer, and this multifunction protection layer has one the 3rd power input part, one first grounding parts, and is electrically connected at first functional unit between the 3rd power input part and this first grounding parts, two second signal input parts, and second functional unit that is electrically connected between each second signal input part and this first grounding parts;
One lower cover insulating barrier, it is arranged at the lower end of this multifunction protection layer, and this lower cover insulating barrier has a second source efferent, one second grounding parts, reaches two first signal efferents; And
One side conductive unit, it comprises five layers of first side conductive layer insulated from each other, a second side conductive layer, one the 3rd side conductive layer, a four side conductive layer, and one the 5th side conductive layer, and wherein each layer side conductive layer is formed in this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and the side of this lower cover insulating barrier from top to bottom in regular turn;
Wherein, this first power input part and this second source input part electrically connect to produce by this first side conductive layer, this first power supply efferent, the 3rd power input part and this second source efferent electrically connect to produce by this second side conductive layer, one first signal input part wherein, wherein one second signal input part electrically connects to produce by the 3rd side conductive layer with one first signal efferent wherein, other one first signal input part, other one second signal input part and other one first signal efferent electrically connect to produce by this four side conductive layer, and this first grounding parts and this second grounding parts electrically connect to produce by the 5th side conductive layer.
2. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 1; it is characterized in that; further comprise: a side runs through the groove unit; it comprises that a first side separated from one another, five roads runs through groove; groove is run through in one second side; one the 3rd side runs through groove; one four side runs through groove; one the 5th side runs through groove; wherein this first side conductive layer forms in the inner surface that groove is run through in this first side; this second side conductive layer forms in the inner surface that groove is run through in this second side; the 3rd side conductive layer forms in the inner surface that the 3rd side runs through groove; this four side conductive layer forms in the inner surface that this four side runs through groove, and the 5th side conductive layer forms in the inner surface that the 5th side runs through groove.
3. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 2; it is characterized in that; this first side is run through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and first chadless of the wherein side of this lower cover insulating barrier is piled up and is formed; this second side is run through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and second chadless of the wherein side of this lower cover insulating barrier is piled up and is formed; the 3rd side runs through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the 3rd chadless of the wherein side of this lower cover insulating barrier is piled up and is formed; this four side runs through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the 4th chadless of the wherein side of this lower cover insulating barrier piles up and forms, and the 5th side runs through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the 5th chadless of the wherein side of this lower cover insulating barrier is piled up and is formed.
4. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 1; it is characterized in that; this over current protection sheath is made up of one first electrode layer, a second electrode lay and a PTC material layer, and this PTC material layer forms between this first electrode layer and this second electrode lay.
5. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 4 is characterized in that, this PTC material layer is a high molecular positive temperature coefficient material layer, resistance elements, capacitance material layer or the electrical sensative material bed of material.
6. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 4; it is characterized in that; this second source input part is a side of this first electrode layer; this first power supply efferent is a side of this second electrode lay; and this first electrode layer have one be used for this second, third, the first electrically isolated insulation division of the 4th and the 5th side conductive layer, this second electrode lay has one and is used for and second insulation division that this first, the 3rd, the 4th and the 5th side conductive layer is electrically isolated.
7. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 4; it is characterized in that; this second source input part is a side of this second electrode lay; this first power supply efferent is a side of this first electrode layer; and this first electrode layer has one and is used for and first insulation division that this first, the 3rd, the 4th and the 5th side conductive layer is electrically isolated, this second electrode lay have one be used for this second, third, the second electrically isolated insulation division of the 4th and the 5th side conductive layer.
8. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 1; it is characterized in that; this first functional unit, this second functional unit, the 3rd power input part, this first grounding parts, and the described second signal input part all form in the upper surface of this multifunction protection layer, and this intermediate insulating layer has an open cells that is used to expose this first functional unit and this second functional unit.
9. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 8; it is characterized in that; this first functional unit is a functional chip; this second functional unit is a groove, and this open cells has second opening that first opening and that is used for ccontaining this functional chip is used to expose this groove.
10. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 9 is characterized in that, this functional chip is an overvoltage protection chip.
11. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 9 is characterized in that, the width of this groove is between 10～100 μ m, and the degree of depth of this groove is between 10～500 μ m.
12. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 8; it is characterized in that; this first functional unit is one first functional chip; and this second functional unit is one second functional chip, and this open cells has second opening that first opening and that is used for ccontaining this first functional chip is used for ccontaining this second functional chip.
13. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 12 is characterized in that, this first functional chip is an overvoltage protection chip, and this second functional chip is an antistatic chip.
14. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 1; it is characterized in that; this first functional unit, this second functional unit, the 3rd power input part, this first grounding parts, and the described second signal input part all form in the lower surface of this multifunction protection layer, and this lower cover insulating barrier has an open cells that is used to expose this first functional unit and this second functional unit.
15. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 14; it is characterized in that; this first functional unit is a functional chip; this second functional unit is a groove, and this open cells has second opening that first opening and that is used for ccontaining this functional chip is used to expose this groove.
16. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 15 is characterized in that, this functional chip is an overvoltage protection chip.
17. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 15 is characterized in that, the width of this groove is between 10～100 μ m, and the degree of depth of this groove is between 10～500 μ m.
18. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 14; it is characterized in that; this first functional unit is one first functional chip; and this second functional unit is one second functional chip, and this open cells has one and is used for first opening of ccontaining this first functional chip and second opening of ccontaining this second functional chip of a usefulness.
19. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 18 is characterized in that, this first functional chip is an overvoltage protection chip, and this second functional chip is an antistatic chip.
20. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 1 is characterized in that, this second source efferent, this second grounding parts, and the described first signal efferent all form in the lower surface of this lower cover insulating barrier.
21. the built-in type multifunctional integration type structure of integration protection component as claimed in claim 1 is characterized in that, this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover insulating barrier be stacked in regular turn.
22. a manufacture method of integrating the built-in type multifunctional integration type structure of protection component is characterized in that, comprises the following steps:
One loam cake insulating barrier is provided, and it has one first power input part and two first signal input parts;
One over current protection sheath is provided, and it is arranged at the lower end of this loam cake insulating barrier, and this over current protection sheath has a second source input part and one first power supply efferent;
One intermediate insulating layer is provided, and it is arranged at the lower end of this over current protection sheath;
One multifunction protection layer is provided, it is arranged at the lower end of this intermediate insulating layer, and this multifunction protection layer has one the 3rd power input part, one first grounding parts, and is electrically connected at first functional unit between the 3rd power input part and this first grounding parts, two second signal input parts, and second functional unit that is electrically connected between each second signal input part and this first grounding parts;
One lower cover insulating barrier is provided, and it is arranged at the lower end of this multifunction protection layer, and this lower cover insulating barrier has a second source efferent, one second grounding parts, reaches two first signal efferents;
In regular turn with this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover stacked dielectric layer combine;
Form a first side conductive layer; one second side conductive layer; one the 3rd side conductive layer; one four side conductive layer; and one the 5th side conductive layer; wherein each layer side conductive layer is formed in this loam cake insulating barrier from top to bottom in regular turn; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the side of this lower cover insulating barrier; therefore this first power input part and this second source input part electrically connect to produce by this first side conductive layer; this first power supply efferent; the 3rd power input part and this second source efferent electrically connect to produce by this second side conductive layer; one first signal input part wherein; wherein one second signal input part electrically connects to produce by the 3rd side conductive layer with one first signal efferent wherein; other one first signal input part; other one second signal input part and other one first signal efferent electrically connect to produce by this four side conductive layer, and this first grounding parts and this second grounding parts electrically connect to produce by the 5th side conductive layer.
23. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 22; it is characterized in that; before the step of the described side conductive layer of above-mentioned formation; further comprise: form a first side and run through groove; groove is run through in one second side; one the 3rd side runs through groove; one four side runs through groove; one the 5th side runs through groove; wherein said side conduction trough runs through this loam cake insulating barrier in regular turn by the mode of boring or punching press; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and this lower cover insulating barrier forms; and this first side conductive layer forms in the inner surface that groove is run through in this first side; this second side conductive layer forms in the inner surface that groove is run through in this second side; the 3rd side conductive layer forms in the inner surface that the 3rd side runs through groove; this four side conductive layer forms in the inner surface that this four side runs through groove, and the 5th side conductive layer forms in the inner surface that the 5th side runs through groove.
24. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 23; it is characterized in that; this first side is run through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and first chadless of the wherein side of this lower cover insulating barrier is piled up and is formed; this second side is run through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and second chadless of the wherein side of this lower cover insulating barrier is piled up and is formed; the 3rd side runs through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the 3rd chadless of the wherein side of this lower cover insulating barrier is piled up and is formed; this four side runs through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the 4th chadless of the wherein side of this lower cover insulating barrier piles up and forms, and the 5th side runs through groove and is formed separately at this loam cake insulating barrier by a plurality of; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and the 5th chadless of the wherein side of this lower cover insulating barrier is piled up and is formed.
25. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 22; it is characterized in that; this over current protection sheath is made up of one first electrode layer, a second electrode lay and a PTC material layer, and this PTC material layer forms between this first electrode layer and this second electrode lay.
26. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 25; it is characterized in that this PTC material layer is a high molecular positive temperature coefficient material layer, resistance elements, capacitance material layer or the electrical sensative material bed of material.
27. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 25; it is characterized in that; this second source input part is a side of this first electrode layer; this first power supply efferent is a side of this second electrode lay; and this first electrode layer have one be used for this second, third, the first electrically isolated insulation division of the 4th and the 5th side conductive layer, this second electrode lay has one and is used for and second insulation division that this first, the 3rd, the 4th and the 5th side conductive layer is electrically isolated.
28. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 25; it is characterized in that; this second source input part is a side of this second electrode lay; this first power supply efferent is a side of this first electrode layer; and this first electrode layer has one and is used for and first insulation division that this first, the 3rd, the 4th and the 5th side conductive layer is electrically isolated, this second electrode lay have one be used for this second, third, the second electrically isolated insulation division of the 4th and the 5th side conductive layer.
29. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 22; it is characterized in that; this first functional unit, this second functional unit, the 3rd power input part, this first grounding parts, and the described second signal input part all form in the upper surface of this multifunction protection layer, and this intermediate insulating layer has an open cells that is used to expose this first functional unit and this second functional unit.
30. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 29; it is characterized in that; this first functional unit is a functional chip; this second functional unit is a groove, and this open cells has second opening that first opening and that is used for ccontaining this functional chip is used to expose this groove.
31. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 30 is characterized in that, this functional chip is an overvoltage protection chip.
32. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 30 is characterized in that, the width of this groove is between 10～100 μ m, and the degree of depth of this groove is between 10～500 μ m.
33. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 29; it is characterized in that; this first functional unit is one first functional chip; and this second functional unit is one second functional chip, and this open cells has one and is used for first opening of ccontaining this first functional chip and second opening of ccontaining this second functional chip of a usefulness.
34. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 33 is characterized in that, this first functional chip is an overvoltage protection chip, and this second functional chip is an antistatic chip.
35. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 22; it is characterized in that; this first functional unit, this second functional unit, the 3rd power input part, this first grounding parts, and the described second signal input part all form in the lower surface of this multifunction protection layer, and this lower cover insulating barrier has an open cells that is used to expose this first functional unit and this second functional unit.
36. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 35; it is characterized in that; this first functional unit is a functional chip; this second functional unit is a groove, and this open cells has second opening that first opening and that is used for ccontaining this functional chip is used to expose this groove.
37. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 36 is characterized in that, this functional chip is an overvoltage protection chip.
38. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 36 is characterized in that, the width of this groove is between 10～100 μ m, and the degree of depth of this groove is between 10～500 μ m.
39. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 35; it is characterized in that; this first functional unit is one first functional chip; and this second functional unit is one second functional chip, and this open cells has one and is used for first opening of ccontaining this first functional chip and second opening of ccontaining this second functional chip of a usefulness.
40. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 39 is characterized in that, this first functional chip is an overvoltage protection chip, and this second functional chip is an antistatic chip.
41. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 22; it is characterized in that, this second source efferent, this second grounding parts, and the described first signal efferent all form in the lower surface of this lower cover insulating barrier.
42. the manufacture method of the built-in type multifunctional integration type structure of integration protection component as claimed in claim 22; it is characterized in that, this loam cake insulating barrier, this over current protection sheath, this intermediate insulating layer, this multifunction protection layer, and this lower cover insulating barrier be stacked in regular turn.
43. built-in type multifunctional integration type structure of integrating protection component; it is characterized in that; comprise: a loam cake insulating barrier; one over current protection sheath; one intermediate insulating layer; one multifunction protection layer; an and lower cover insulating barrier; this loam cake insulating barrier wherein; this over current protection sheath; this intermediate insulating layer; this multifunction protection layer; and this lower cover insulating barrier is stacked in regular turn; and this multifunction protection layer has one first functional unit and one second functional unit; thus abnormal electric current stream through first functional unit of this over current protection sheath and this multifunction protection layer being sent to an earth terminal, and an abnormal signal stream through second functional unit of this multifunction protection layer to be sent to this earth terminal.
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| CNA2007101823275A CN101414602A (en) | 2007-10-17 | 2007-10-17 | Inner imbedded type multifunctional integration type structure for integration protection element and preparation method thereof |
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| CNA2007101823275A CN101414602A (en) | 2007-10-17 | 2007-10-17 | Inner imbedded type multifunctional integration type structure for integration protection element and preparation method thereof |
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| CN103956343A (en) * | 2014-05-09 | 2014-07-30 | 应达利电子(深圳)有限公司 | Chip encapsulation structure and production technology thereof |
| CN111415925A (en) * | 2019-01-07 | 2020-07-14 | 台达电子企业管理（上海）有限公司 | Power module and preparation method thereof |
| US11063525B2 (en) | 2019-01-07 | 2021-07-13 | Delta Electronics (Shanghai) Co., Ltd. | Power supply module and manufacture method for same |
| US11227856B2 (en) | 2019-01-07 | 2022-01-18 | Delta Electronics (Shanghai) Co., Ltd. | Multi-chip package power module |
| US11399438B2 (en) | 2019-01-07 | 2022-07-26 | Delta Electronics (Shanghai) Co., Ltd. | Power module, chip-embedded package module and manufacturing method of chip-embedded package module |
| US11676756B2 (en) | 2019-01-07 | 2023-06-13 | Delta Electronics (Shanghai) Co., Ltd. | Coupled inductor and power supply module |
-
2007
- 2007-10-17 CN CNA2007101823275A patent/CN101414602A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103956343A (en) * | 2014-05-09 | 2014-07-30 | 应达利电子(深圳)有限公司 | Chip encapsulation structure and production technology thereof |
| CN103956343B (en) * | 2014-05-09 | 2016-10-19 | 应达利电子股份有限公司 | A kind of chip-packaging structure and processing technology thereof |
| CN111415925A (en) * | 2019-01-07 | 2020-07-14 | 台达电子企业管理（上海）有限公司 | Power module and preparation method thereof |
| US11063525B2 (en) | 2019-01-07 | 2021-07-13 | Delta Electronics (Shanghai) Co., Ltd. | Power supply module and manufacture method for same |
| US11227856B2 (en) | 2019-01-07 | 2022-01-18 | Delta Electronics (Shanghai) Co., Ltd. | Multi-chip package power module |
| US11316438B2 (en) | 2019-01-07 | 2022-04-26 | Delta Eletronics (Shanghai) Co., Ltd. | Power supply module and manufacture method for same |
| US11399438B2 (en) | 2019-01-07 | 2022-07-26 | Delta Electronics (Shanghai) Co., Ltd. | Power module, chip-embedded package module and manufacturing method of chip-embedded package module |
| US11676756B2 (en) | 2019-01-07 | 2023-06-13 | Delta Electronics (Shanghai) Co., Ltd. | Coupled inductor and power supply module |
| US11901113B2 (en) | 2019-01-07 | 2024-02-13 | Delta Electronics (Shanghai) Co., Ltd. | Inversely coupled inductor and power supply module |
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