KR20180035440A - ESD protection device and method thereof and mobile electronic device with the same - Google Patents

Abstract

Provided is an ESD protection device, a manufacturing method thereof, and a portable electronic apparatus including the same. The ESD protection device according to an embodiment of the present invention includes: a protection unit which passes static electricity; and a capacitor unit connected in parallel to the protection unit. Wherein, either the protection unit or the capacitor unit is formed with a substrate and the other is formed with a single component. The substrate and the single component are molded by a molding member. Accordingly, the reliability of a product can be improved by simultaneously enhancing static electricity resistance and improving capacitance. Manufacturing efficiency can be improved and manufacturing costs can be reduced by simplifying a manufacturing process and facilitating a lineup according to various capacities. Temperature characteristics of an entire package can be stabilized by complementing the temperature characteristics of a static electricity protection function, thereby improving the reliability of the product.

Description

[0001] The present invention relates to an ESD protection device, a method of manufacturing the ESD protection device, and a portable electronic device having the ESD protection device,

The present invention relates to an electrostatic protection device for an electronic device such as a smart phone, and more particularly, to an electrostatic protection device capable of simultaneously improving ESD tolerance, temperature characteristics, and capacitance capacity, And more particularly, to a portable electronic device equipped with the same.

In recent portable electronic devices, there is an increasing tendency to adopt a metal housing to improve esthetics and robustness.

However, since the metal housing is excellent in electrical conductivity due to the nature of the material, an electrical path can be formed between the housing and the built-in circuit depending on the specific device or depending on the location. Particularly, since the metal housing and the circuit part form a loop, when a static electricity having a high voltage instantaneously flows through a conductor such as a metal housing having a large exposed surface area, the circuit part such as an IC can be damaged, Measures are required.

Furthermore, since such static electricity is more likely to flow into the pointed tip than the flat surface due to its nature, there is a need to further strengthen the immunity of static electricity to such portions.

On the other hand, since such a portable electronic device essentially carries a communication function, a high capacitance is required to stably process a communication signal without attenuation. In particular, various capacitances are required depending on a position on a circuit board.

In this case, when a varistor is used as an electrostatic protection element, resistance to static electricity can be enhanced, but it is not easy to achieve a capacitance of a high capacity. Further, since the varistor material has a high temperature change rate due to its characteristics, It causes deterioration of the overall temperature characteristics.

Accordingly, it is urgent to implement various high capacity capacities while at the same time enhancing the electrostatic immunity of the portable electronic device at positions where the static electricity is easy to flow, and at the same time, measures for stabilizing the temperature are urgently required.

KR 10-0684334 B1 (2007.12.12 Enrollment)

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances and provides an electrostatic protection device capable of simultaneously improving resistance to static electricity, And a portable electronic device having the same.

According to an aspect of the present invention, And a capacitor portion connected in parallel to the protection portion. Here, one of the protective portion and the capacitor portion is formed of a substrate and the other is formed of a single component, and the substrate and the single component are molded by the molding member.

According to a preferred embodiment of the present invention, the protector may include a pair of inner electrodes spaced apart from each other at a predetermined interval on the same plane.

Also, the molding member may be made of epoxy.

Further, the substrate may be a COG type dielectric substrate, and the single component may be a varistor.

Further, the substrate may be a varistor substrate, and the single component may be a COG type MLCC.

Further, the protective portion may be a varistor or a diode.

In addition, the protective portion and the capacitor portion may be horizontally coupled to the left and right.

The protective portion and the capacitor portion may be vertically stacked.

In addition, the single component may be laminated to the substrate in the form of a flip chip.

In addition, the single component may be laminated to the substrate by soldering.

The substrate may include a pair of lower surface electrodes; A pair of top electrodes; At least a pair of inner electrodes; And a pair of connection portions connecting each pair of the electrodes.

In addition, the interval a between the pair of upper surface electrodes may be smaller than the interval b between the pair of lower surface electrodes.

Also, a space formed by the pair of upper electrodes and the lower surface of the single component may be filled with a discharge material.

In addition, the discharge material may be made of a non-conductive material or a semiconductor material including metal particles.

In addition, the pair of connection portions may be a conductive via formed through the substrate.

The pair of connection portions may be formed on both sides of the substrate.

According to another aspect of the present invention, there is provided a plasma display panel comprising: a substrate including a pair of bottom electrodes, a pair of top electrodes, at least a pair of internal electrodes, and a pair of connection portions connecting the pair of electrodes; A single component coupled to an upper surface electrode of the substrate to be connected in parallel with the substrate; And a molding part for molding the upper surface of the substrate and the single part. Here, either one of the substrate and the single component is a protective portion for passing static electricity, and the other is a capacitor portion.

According to another aspect of the present invention, there is provided a connector comprising: a conductor including a tip portion protruding outward from a conductive case; Circuitry; And an electrostatic protection element electrically connecting the conductor and the circuit portion. Here, the electrostatic protection device may be preferably an electrostatic protection device of various embodiments having the structure and characteristics as described above.

According to a preferred embodiment of the present invention, the conductor may comprise a side key.

The distal end portion may include one end of a connector insertion port for connection with an external device.

According to another aspect of the present invention, there is provided a method of manufacturing a plasma display panel, comprising: forming a pair of inner electrodes, a pair of upper electrodes, a pair of lower electrodes, and a pair of connection portions connecting the pair of electrodes, Soldering and laminating a single component to the top electrode in a flip chip form; Molding an upper surface of the substrate and the single component with an epoxy film; And a step of cutting each of the unit areas. Here, either one of the substrate and the single component is a protective portion for passing static electricity, and the other is a capacitor portion.

According to a preferred embodiment of the present invention, the method for fabricating an electrostatic discharge protection device may further include filling a space between the pair of top electrodes with a discharge material after the forming.

The method may further include filling a space formed by the pair of top electrodes and the bottom surface of the single part with a discharge material after the combining step.

Further, the molding step may be performed by disposing an epoxy film on the substrate and the single component.

The large-area substrate may be a dielectric substrate or a varistor substrate.

In the forming, the upper surface electrode and the lower surface electrode may be formed such that an interval (a) between the pair of upper surface electrodes is smaller than an interval (b) between the pair of lower surface electrodes.

According to the present invention, since the electrostatic protection function and the capacitor function are separately provided and a single package is formed, the resistance to static electricity is enhanced and the capacitance capacity is improved at the same time, so that the reliability of the product can be improved.

Further, the present invention can provide the electrostatic protection function and the capacitor function separately in the form of a single component and a substrate, and can be made into a single package, thereby simplifying the manufacturing process and facilitating the lineup according to various capacities, .

In addition, the present invention can improve the reliability of the product because the temperature characteristic of the entire package can be stabilized by compensating the temperature characteristic of the electrostatic protection function by implementing the capacitance by using the COG type dielectric.

Further, since the dielectric substrate or the single MLCC is used, the degree of freedom in designing the capacitance is increased, so that the lineup of various capacities can be performed, so that it is possible to quickly respond to the request of the customer without changing the process.

In addition, since the single component and the substrate are molded into a single package, the size of the entire chip size can be uniformly regulated while protecting the single component and the substrate, and the pickup performance can be improved in the manufacturing process, It is possible to further improve the manufacturing efficiency since there is no need for a separate effort for picking up the device.

In addition, the present invention can mass-produce the epoxy film by curing and molding the epoxy film using a large-area substrate, thereby reducing the raw materials to be discarded, thereby further reducing the manufacturing cost and contributing to the improvement of the environment.

Further, since the varistor is constituted by a single layer, it is possible to sufficiently secure a space for forming a capacitance, and to easily realize a high capacitance, or to uniformize the chip size while using a single capacitor having a relatively large volume .

Further, since the distance between the upper surface electrodes of the substrate is made smaller than the distance between the lower surface electrodes, the electrostatic discharge can be performed through the space between the upper surface electrodes, so that the discharge path of the static electricity is added to further improve the resistance to static electricity .

1 is a cross-sectional view of an electrostatic discharge protection device according to an embodiment of the present invention,
FIG. 2 is an exploded perspective view showing a state where the molding part is removed in FIG. 1,
3 is a cross-sectional view showing a relationship between a distance between upper surface electrodes and an interval between lower surface electrodes of a substrate in an electrostatic discharge protection element according to an embodiment of the present invention,
4 is a cross-sectional view illustrating an example of a substrate in an electrostatic discharge protection device according to an embodiment of the present invention,
5 is a sectional view showing another example of a substrate in an electrostatic discharge protection device according to an embodiment of the present invention,
6 is a sectional view showing another example of an electrostatic protection device according to an embodiment of the present invention,
7 is a flowchart illustrating a method of manufacturing an electrostatic protection device according to an embodiment of the present invention.
8 to 11 are cross-sectional views illustrating steps of a method of manufacturing an electrostatic discharge protection device according to an embodiment of the present invention,
12 is a graph showing the temperature change rate of the varistor and the dielectric.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings, which will be readily apparent to those skilled in the art to which the present invention pertains. The present invention may be embodied in many different forms and is not limited to the embodiments described herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same reference numerals are assigned to the same or similar components throughout the specification.

1 and 6, the electrostatic protection devices 100 and 200 according to an embodiment of the present invention include a protection unit, a capacitor unit, and a molding unit 130. [ Here, the protection unit passes static electricity, and the capacitor unit is connected in parallel with the protection unit.

In addition, one of the protection unit and the capacitor unit is formed of the substrate 110, and the other of the protection unit and the capacitor unit is formed of the single part 120.

In one example, in FIG. 1, the capacitor portion is a substrate 110, and the protection portion may be a single component 120. 6, the protector may be a substrate 210, and the capacitor may be a single component 220. [

Here, the protection unit may be a varistor or a diode. The protective portion and the capacitor portion may be vertically stacked. Alternatively, the protective portion and the capacitor portion may be horizontally coupled to the left and right.

The protection unit may include a pair of internal electrodes spaced apart from each other at regular intervals on the same plane.

Here, since the electrostatic protection elements 100 and 200 have separate capacitors, it is not necessary to implement the capacitance by the protection part. Further, when the protective part is a varistor having a high rate of temperature change, if a capacitance is formed in the varistor, Since the capacitance is changed, the capacitance of the entire package is adversely affected. Therefore, it is preferable to dispose the electrode structure on the same plane by excluding the lamination structure that forms the capacitance as much as possible.

As a result, the protective portion may be made thin as a single component 120 as shown in FIG. 1 or as a substrate 210 as shown in FIG. 6. Therefore, it is easy to normalize the total thickness of the electrostatic protection elements 100 and 200 to a chip size.

That is, since the space for forming the capacitance within the chip size of a certain size relatively increases according to the thinning of the protective portion, it is easy to realize a high capacity by securing a sufficient space, and a high capacity capacitor having a relatively large volume It is possible to uniformize the entire chip size.

1, the thickness t1 of the substrate 110, which is a capacitor portion, may be greater than the thickness t2 of the single component 120, which is a protective portion, but as shown in Fig. 6, The thickness t3 of the protective part 210 may be smaller than the thickness t4 of the single part 220 as the capacitor part.

Here, the thicknesses t2 and t3 of the single component 120 or the substrate 210 as the protective part may be the same or similar, and the thicknesses t1 and t4 of the substrate 110 or the single part 220, Or the like, the whole package can be uniformly standardized.

On the other hand, when the temperature change rate of the varistor material and the dielectric material is compared (see FIG. 12), it can be seen that the dielectric material has a temperature change rate of less than 1% over the entire temperature range, . Particularly, since the varistor material may have a rate of change of 5% or more, it is difficult to realize the capacitance within the error range when the capacitance value should be controlled within 5% due to the signal characteristics. Therefore, the capacitance is implemented by using the dielectric desirable.

At this time, it is difficult to provide linear ESD protection if the dielectric alone implements the ESD protection function.

Therefore, the electrostatic protection devices 100 and 200 according to an embodiment of the present invention provide the ESD function while improving the temperature characteristic. In order to standardize the single chip, the ESD protection function is implemented as a varistor material, .

Hereinafter, as shown in FIG. 1, the electrostatic protection device 100 in which the capacitor part is the substrate 110 and the protection part is a single part 120 will be described first.

The substrate 110 may be a COG type dielectric substrate. Here, the COG characteristic satisfies a temperature coefficient of 0 ± 30 ppm / ° C. within the operating temperature range of -55 to 125 ° C., as specified by EIA (Electrical Industries Association). Therefore, since the temperature change rate of the COG type dielectric substrate 100 is very small, the temperature compensation function can be provided when the single component 120 has a large temperature change rate.

For example, when the single component 120 is a varistor, since the varistor has a large rate of temperature change due to the nature of the material, if the temperature change due to frequent use is used in extreme portable electronic devices, The COG type dielectric substrate can compensate for the deterioration of characteristics due to the temperature change of the varistor.

By implementing the capacitor portion using the COG type dielectric substrate, the temperature characteristics of the varistor can be stabilized by compensating the temperature characteristic of the varistor having a high temperature change rate, thereby improving the reliability of the product.

Such a substrate 110 may be a stack of a plurality of sheet layers 110a (see FIGS. 4 and 5). Here, each of the plurality of sheet layers may be made of an insulator having a dielectric constant, and may be made of a ceramic material. In one example, the ceramic material comprises Er ₂ O _3, Dy ₂ O _3, Ho ₂ O _3, V ₂ O _5, CoO, MoO _3, SnO _2, BaTiO _3, and Nd ₂ O ₃ or more of the selected one kinds Based oxide compound.

In addition, since the capacitor portion is implemented by the dielectric substrate 110, the capacitance can be independently implemented with respect to the protection portion having a large temperature change rate, for example, the varistor material. Thus, the degree of freedom in designing the capacitance is increased, Line-up is possible, so that it can respond quickly to customer's request.

4, the substrate 110 includes a pair of lower electrodes 111a and 111b, a pair of upper electrodes 112a and 112b, a plurality of internal electrodes 113a and 113b, And may include connecting portions 114a and 114b.

The pair of lower surface electrodes 111a and 111b are for mounting the electrostatic protection device 100 on the circuit board and may be formed on both sides of the lower surface of the substrate 110. [

The pair of top electrodes 112a and 112b are connected to the single component 120 in parallel and may be formed on both sides of the top surface of the substrate 110. [ At this time, as shown in FIG. 2, a space 101 may be formed between the pair of top electrodes 112a and 112b. This space 101 can form a discharge path of electrostatic discharge (ESD) through the pair of top electrodes 112a and 112b.

That is, the electrostatic discharge can be performed through the space 101 between the pair of top electrodes 112a and 112b, so that the discharge path of the static electricity is added separately from the single part 120, which is the protection part, have.

3, the interval a between the pair of top electrodes 112a and 112b may be smaller than the interval b between the pair of the bottom electrodes 111a and 111b. Thus, the static electricity flowing from the outside can be discharged only through the pair of top electrodes 112a and 112b before being discharged through the pair of bottom electrodes 111a and 111b.

The plurality of internal electrodes 113a and 113b may be formed on a plurality of sheet layers 110a constituting the substrate 110, respectively. Here, the plurality of internal electrodes 113a and 113b may be capacitor electrodes.

The capacitor electrodes 113a and 113b may be connected to a pair of upper electrodes 112a and 112b and a pair of lower electrodes 111a and 111b through a pair of connection portions 114a and 114b. That is, the capacitor electrode 113a on one side is connected to the top electrode 112a and the bottom electrode 111a through the connecting portion 114a, and the capacitor electrode 113b on the other side is connected to the top electrode 112b And the lower electrode 111b, respectively.

The pair of connection portions 114a and 114b may be conductive vias 114a and 114b formed through the substrate 110. [ Here, the pair of conductive vias 114a and 114b may be filled with a conductive material after forming a through hole passing through the substrate 110. [ The substrate 110 can be connected in parallel with the single component 120 by the pair of conductive vias 114a and 114b.

Here, since the pair of conductive vias 114a and 114b are formed in the substrate 110, the length L1 of the internal electrodes 113a and 113b is reduced and the capacity thereof is limited. Therefore, And a pair of side electrodes 114a 'and 114b' may be provided on both sides of the first electrode 110.

For example, as shown in FIG. 4, since the length L1 of each of the capacitor electrodes 113a and 113b is limited between the pair of conductive vias 114a and 114b, the area of the capacitor is reduced, Is limited.

In order to increase the capacity of the capacitance, as shown in FIG. 5, the substrate 110 'may have the pair of connection portions formed on both sides of the substrate. That is, the pair of connection portions may be a pair of side electrodes 114a 'and 114b'.

Here, the pair of side electrodes 114a 'and 114b' are formed by drilling or punching a part of the side surface of the substrate 110 to form a hemispherical groove, and a conductive material is applied to the surface of the formed groove or filled in the groove .

At this time, since the length L2 of the capacitor electrodes 113a 'and 113b' connected to the pair of side electrodes 114a 'and 114b' increases as compared with that of FIG. 4, the area of the capacitor increases, .

In the present embodiment, the substrate 110 is a capacitor, but the present invention is not limited thereto. In the case where the substrate 210 is a protection portion, a pair of connection portions may be formed so as to satisfy a breakdown voltage Vbr Can be determined.

The single component 120 may be a varistor. The single component 120 may include a pair of internal electrodes spaced apart from each other at regular intervals on the same plane. As a result, the thickness of the single component 120 can be made thin, and the thickness of the electrostatic protection device 100 can be prevented from increasing even in the state of being finally stacked on the substrate 110, thereby satisfying the prescribed chip size.

This single component 120 is coupled to a pair of top electrodes 112a and 112b of the substrate 110 to be connected in parallel with the substrate 110. [ In one example, the single component 120 may be laminated in a flip chip form to a pair of top surface electrodes 112a, 112b of the substrate 110. At this time, the single component 120 may be laminated to the substrate 110 by soldering.

On the other hand, in order to improve the discharge function by the space 101 between the pair of top electrodes 112a and 112b, a space formed by the lower surfaces of the pair of top electrodes 112a and 112b and the single part 120 Some or all of the discharge electrode 101 may be filled with a discharge material.

Here, the discharge material has a low dielectric constant, no conductivity, and no short circuit when an overvoltage is applied. To this end, the discharge material may be made of a nonconductive material including metal particles, and may be made of a semiconductor material including SiC or a silicon-based material.

The molding part 130 molds the substrate 110 and the single part 120 by a molding member. That is, the molding part 130 is molded so as to cover the upper surface of the substrate 110 and the single part 120. In one example, the molding member may be made of epoxy. Here, the molding part 130 may be formed by curing the epoxy film.

By molding the substrate 110 and the single part 120 by the molding part 130 to form a single package, even when a single part and a substrate are protected and a single part having various capacities and characteristics is used, Can be standardized. As a result, the pick-up property can be improved in the manufacturing process, so that no extra effort is required for picking up the electrostatic protection element, and the manufacturing efficiency can be further improved.

Since the protective portion and the capacitor portion for passing the static electricity are formed as a single package, the protection portion and the capacitor portion can be independently provided without being influenced by each other by different materials, so that the resistance against static electricity is enhanced and the capacity of the capacitance is simultaneously improved The reliability of the product can be improved.

Particularly, since the influence of the protective portion is eliminated, the interval of the capacitor electrodes formed in the capacitor portion can be more densely formed, so that the number of stacked capacitor electrodes can be increased and the capacitance of a high capacity can be easily realized.

On the other hand, the protection unit and the capacitor unit may be disposed opposite to each other. 6, the substrate 210 may be a varistor substrate in the case of the electrostatic protection device 200 in which the protecting part is the substrate 210 and the capacitor part is a single part 220. In other words,

The substrate 210 may be made of a varistor material, for example, a semiconductive material containing at least one of ZnO, SrTiO3, BaTiO3, and SiC, or a Pr and Bi-based material. Here, the substrate 210 may be formed such that the particle diameter of the varistor material as described above can satisfy the breakdown voltage Vbr.

Such a substrate 210 may include a pair of internal electrodes spaced apart from each other at regular intervals on the same plane. Thus, the thickness of the substrate 210 can be reduced to prevent an increase in thickness of the ESD protection element 200 even when the single part 220 is stacked, thereby satisfying the prescribed chip size.

The single component 220 may be a multilayer ceramic capacitor (MLCC) of the COG type. That is, the single component 220 may be an MLCC that satisfies the COG characteristics as described above.

As described above, by using the MLCC manufactured by the conventional various capacitances, since the degree of design freedom in the implementation of the capacitance is increased, the lineup of various capacities can be performed without any process change, so that the MLCC can quickly respond to the request of the customer.

In addition, by using the COG type MLCC, the temperature characteristics of the substrate 210 such as a varistor having a high rate of temperature change can be compensated to stabilize the temperature characteristics of the entire package, thereby improving the reliability of the product.

Here, the single component 220 may include a plurality of capacitor electrodes, similar to those shown in Figs. 4 and 5, and a plurality of sheet layers each formed with capacitor electrodes.

By configuring the single component 220 as an MLCC, various capacitances can be easily implemented by MLCCs of various capacities manufactured in the above manner, so that a lineup of various capacities can be constructed without changing the additional process, You can respond quickly to your needs.

Such electrostatic protection devices 100, 200 may be arranged in a portable electronic device to electrically connect a conductor such as an external metal case to a circuit portion. At this time, the static electricity protection elements 100 and 200 are directly connected to the ground of the circuit part so that the static electricity introduced can be bypassed to the ground without transmitting the static electricity to the circuit part.

Optionally, if the electrostatic protection elements 100, 200 are not directly connected to the ground of the circuitry, i. E. Only by electrically connecting the conductor and circuitry to pass static electricity, the portable electronic device may be configured to bypass static electricity to ground A separate protection element may be provided. Such a shelter may be a surgeon or a varistor.

Here, the portable electronic device may be in the form of a portable electronic device that is portable and portable. For example, the portable electronic device may be a portable terminal such as a smart phone, a cellular phone, and the like, and may be a smart watch, a digital camera, a DMB, an electronic book, a netbook, a tablet PC, Such electronic devices may comprise any suitable electronic components including antenna structures for communication with external devices. In addition, it may be a device using local area network communication such as WiFi and Bluetooth.

In this case, the conductor may include a tip portion protruding outward from the conductive case. In one example, the conductor may include a side key. The distal end portion may include one end of a connector insertion port into which a connector, for example, an earphone, a charging cable, a data cable, or the like, is inserted.

That is, the electrostatic protection devices 100 and 200 according to the embodiment of the present invention can prevent the electrostatic discharge (ESD) resistance and the temperature Characteristics, and capacitance can be improved at the same time.

Hereinafter, a method of manufacturing an electrostatic discharge protection device according to an embodiment of the present invention will be described with reference to FIGS.

7, a method 700 of manufacturing an electrostatic protection device of the present invention includes forming an inner / outer electrode on a substrate 110 (S710), stacking a single part 120 on a substrate 110 (S720), molding (S730 and S740) with a molding film, and cutting (S750) into a unit device.

More specifically, first, as shown in Fig. 8, a pair of lower electrodes 111a and 111b, a pair of upper electrodes 112a and 112b, and at least one pair of lower electrodes The internal electrodes 113a and 113b and the pair of electrodes 114a and 114b connecting the pair of electrodes are formed in step S710.

Here, the large-area substrate 110a may be a dielectric substrate as shown in FIG. 1 when the substrate 110 is a capacitor. Also, the large-area substrate 110a may be a varistor substrate as shown in FIG. 6 when the substrate 110 is a protective portion through which static electricity passes. The substrate 110 may be formed by laminating a plurality of sheet layers on which the electrodes 113a and 113b are formed.

At this time, a pair of lower surface electrodes (111a, 111b) are formed on the lower surface of the large-area substrate (110a) so that the distance between the pair of upper surface electrodes (112a, 112b) is smaller than the space between the pair of lower surface electrodes And a pair of upper surface electrodes 112a and 112b can be formed on the upper surface of the large-area substrate 110a.

On the other hand, when the large-area substrate 110a is a dielectric substrate, the internal electrodes 113a and 113b may be a plurality of capacitor electrodes. Also, when the large-area substrate 110a is a varistor substrate, the internal electrodes 113a and 113b may be spaced apart from each other at regular intervals on the same plane.

Here, the pair of connection portions 114a and 114b may be a conductive via or a side electrode. At this time, the pair of conductive vias 114a and 114b may be formed by forming a through hole in the unit area of the large-area substrate 110a and filling the through hole with a conductive material.

The pair of side electrodes 114a 'and 114b' may be formed by forming a through hole on the boundary surface of the unit area on the large area substrate 110a, that is, on the cut surface c, and then filling the through hole with a conductive material, And may be formed by applying a conductive material to the inner wall of the hole.

Next, as shown in FIG. 9, a single component 120 is soldered and laminated to a pair of top electrodes 112a and 112b (step S720).

Here, if the single part 120 is a protective part for passing static electricity, it may be a varistor or a diode as shown in FIG. Also, when the single component 120 is a capacitor portion, it may be a COG type MLCC as shown in FIG. Such a single part 120 may be pre-made or existing.

At this time, the pair of external electrodes 121a and 121b of the single component 120 can be laminated to be coupled to the pair of the top electrodes 112a and 112b of the large-area substrate 110a. Thus, the single component 120 can be connected to the substrate 110 in parallel for each unit area of the large-area substrate 110a.

Next, as shown in Fig. 10, the molding film 130a is disposed on the upper surface of the large-area substrate 110a and on the upper side of the single component 120 (step S730). At this time, the molding film 130a may be a large-area film having the same size as that of the large-area substrate 110a. Here, the molding film 130a may be an epoxy film.

In this state, the epoxy film 130a may be thermally fused to cover the upper surface of the large-area substrate 110a and the single component 120 (step S740). At this time, the epoxy film 130a is melted and the upper surface of the large-area substrate 110a and the single part 120 can be molded with epoxy, as shown in FIG.

As a result, mass production is easy, so that the raw materials to be discarded are reduced, thereby further reducing the manufacturing cost and contributing to the improvement of the environment.

After the molding is completed in this manner, the unit areas are cut along the boundary line c. Thus, the electrostatic protection elements 100 and 200 can be manufactured for each unit area. At this time, when the electrode is formed by the through hole at the boundary line c of the large area substrate 110a, the pair of side electrodes 114a 'and 114b' may be exposed to the outside along the cut surface of the boundary line c .

On the other hand, a discharge material may be formed in the space 101 in order to improve discharge characteristics for the space 101 between the pair of top electrodes 112a and 112b.

For example, as shown in FIG. 8, after the pair of top electrodes 112a and 112b are formed, the space 101 between the pair of top electrodes 112a and 112b may be filled with a discharge material.

Alternatively, after the single component 120 is laminated to the large-area substrate 110a, as shown in Fig. 9, a space formed by the lower surfaces of the pair of top electrodes 112a, 112b and the single component 120 (101) discharge material.

Here, the discharge material has a low dielectric constant, no conductivity, and no short circuit when an overvoltage is applied. To this end, the discharge material may be made of a nonconductive material including metal particles, and may be made of a semiconductor material including SiC or a silicon-based material.

In this way, since the protective portion and the capacitor portion for passing the static electricity are provided in separate single parts and substrate form, and the single package is formed, the manufacturing process can be simplified by using substantially the substrate forming process and the package process. Particularly, when the capacitor is used as a single part, it is possible to improve the manufacturing efficiency, reduce the manufacturing cost, and promptly respond to the customers' demands by facilitating the lineup according to various capacities required by the customer.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: electrostatic protection element 101: space
110, 210: substrate 110a: large area substrate
111a, 111b, 211a, 211b: lower electrodes 112a, 112b, 212a, 212b:
113a, 113b, 113a ', 113b': internal electrodes 114a, 114b: conductive vias
114a ', 114b': side electrodes 120, 220:
121a, 121b, 221a, 221b: external electrodes 130, 230:
130a; Epoxy film

Claims (26)

A protective portion for passing static electricity; And
And a capacitor portion connected in parallel with the protection portion,
Wherein one of the protective portion and the capacitor portion is formed of a substrate,
The other is a single part,
Wherein the substrate and the single part are molded by a molding member. The method according to claim 1,
Wherein the protection unit includes a pair of internal electrodes spaced apart from each other at regular intervals on the same plane. The method according to claim 1,
Wherein the molding member is made of epoxy. The method according to claim 1,
Wherein the substrate is a COG type dielectric substrate and the single component is a varistor. The method according to claim 1,
Wherein the substrate is a varistor substrate and the single component is a COG type MLCC. The method according to claim 1,
Wherein the protection unit is a varistor or a diode. The method according to claim 1,
Wherein the protection unit and the capacitor unit are horizontally coupled horizontally. The method according to claim 1,
Wherein the protection unit and the capacitor unit are vertically stacked. 9. The method of claim 8,
Wherein the single component is laminated to the substrate in a flip chip form. 9. The method of claim 8,
Wherein the single component is laminated to the substrate by soldering. 9. The method of claim 8,
A pair of bottom electrodes;
A pair of top electrodes;
At least a pair of inner electrodes; And
And a pair of connection portions connecting each pair of the electrodes. 12. The method of claim 11,
Wherein an interval (a) between the pair of upper surface electrodes is smaller than an interval (b) between the pair of lower surface electrodes. 12. The method of claim 11,
Wherein a space formed by the pair of top electrodes and the bottom surface of the single component is filled with a discharge material. 14. The method of claim 13,
Wherein the discharge material is made of a nonconductive material or a semiconductor material including metal particles. 12. The method of claim 11,
Wherein the pair of connection portions are conductive vias formed through the substrate. 12. The method of claim 11,
Wherein the pair of connection portions are formed on both sides of the substrate. A substrate including a pair of bottom electrodes, a pair of top electrodes, at least a pair of inner electrodes, and a pair of connecting portions connecting each pair of electrodes;
A single component coupled to an upper surface electrode of the substrate to be connected in parallel with the substrate; And
An upper surface of the substrate and a molding part for molding the single part,
Wherein one of the substrate and the single component is a protective portion for passing static electricity and the other is a capacitor portion. A conductor including a tip portion protruding outward from the conductive case;
Circuitry; And
A portable electronic device comprising the electrostatic protection element according to any one of claims 1 to 17 for electrically connecting the conductor to a circuit part. 19. The method of claim 18,
Wherein the conductor comprises a side key. 19. The method of claim 18,
And the tip portion includes one end of an insertion port of a connector for connection with an external device. Forming at least one pair of internal electrodes, a pair of top electrodes, a pair of bottom electrodes, and a pair of connection portions connecting the pairs of electrodes, in each unit area, on the large area substrate;
Soldering and laminating a single component to the top electrode in a flip chip form;
Molding an upper surface of the substrate and the single component with an epoxy film; And
And cutting each of the unit areas,
Wherein one of the substrate and the single component is a protective portion for passing static electricity and the other is a capacitor portion. 22. The method of claim 21,
After the forming step,
Further comprising the step of filling a space between the pair of top electrodes with a discharge material. 22. The method of claim 21,
After said combining,
Further comprising the step of filling a space formed by the pair of top electrodes and the bottom surface of the single part with a discharge material. 22. The method of claim 21,
Wherein the molding step comprises placing an epoxy film on an upper side of the substrate and the single component to cure the epoxy film. 22. The method of claim 21,
Wherein the large-area substrate is a dielectric substrate or a varistor substrate. 22. The method of claim 21,
Wherein the forming step forms the upper surface electrode and the lower surface electrode such that an interval (a) between the pair of upper surface electrodes is smaller than an interval (b) between the pair of lower surface electrodes.

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