CN100593513C - 硅的制造方法 - Google Patents

硅的制造方法 Download PDF

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Publication number
CN100593513C
CN100593513C CN200680016926A CN200680016926A CN100593513C CN 100593513 C CN100593513 C CN 100593513C CN 200680016926 A CN200680016926 A CN 200680016926A CN 200680016926 A CN200680016926 A CN 200680016926A CN 100593513 C CN100593513 C CN 100593513C
Authority
CN
China
Prior art keywords
silicon
trichlorosilane
hydrogen
chlorosilane
tcs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200680016926A
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English (en)
Chinese (zh)
Other versions
CN101175694A (zh
Inventor
若松智
小田开行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of CN101175694A publication Critical patent/CN101175694A/zh
Application granted granted Critical
Publication of CN100593513C publication Critical patent/CN100593513C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10773—Halogenated silanes obtained by disproportionation and molecular rearrangement of halogenated silanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Photovoltaic Devices (AREA)
  • Catalysts (AREA)
CN200680016926A 2005-05-18 2006-05-15 硅的制造方法 Expired - Fee Related CN100593513C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005145090A JP4740646B2 (ja) 2005-05-18 2005-05-18 シリコンの製造方法
JP145090/2005 2005-05-18

Publications (2)

Publication Number Publication Date
CN101175694A CN101175694A (zh) 2008-05-07
CN100593513C true CN100593513C (zh) 2010-03-10

Family

ID=37431368

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200680016926A Expired - Fee Related CN100593513C (zh) 2005-05-18 2006-05-15 硅的制造方法

Country Status (6)

Country Link
US (1) US8894959B2 (enExample)
EP (1) EP1882675B1 (enExample)
JP (1) JP4740646B2 (enExample)
CN (1) CN100593513C (enExample)
TW (1) TW200704588A (enExample)
WO (1) WO2006123802A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5018156B2 (ja) * 2007-03-19 2012-09-05 Ｊｎｃ株式会社 多結晶シリコンの製造方法
JP4714196B2 (ja) * 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
JP5258339B2 (ja) * 2008-03-24 2013-08-07 株式会社トクヤマ シリコン製造プロセス
JP2009256143A (ja) 2008-04-17 2009-11-05 Tokuyama Corp シリコンの製造方法
KR101527516B1 (ko) 2008-12-16 2015-06-09 삼성전자주식회사 실리콘 성장방법 및 이를 이용한 태양전지 제조방법
WO2010074301A1 (ja) * 2008-12-25 2010-07-01 株式会社トクヤマ クロロシランの製造方法
JP5339948B2 (ja) * 2009-02-12 2013-11-13 株式会社大阪チタニウムテクノロジーズ 高純度多結晶シリコン製造方法
WO2011040190A1 (ja) * 2009-09-29 2011-04-07 株式会社トクヤマ ヒュームドシリカの製造方法
KR101873923B1 (ko) 2010-12-20 2018-08-02 썬에디슨, 인크. 불균화 작업을 포함하는 실질적으로 폐쇄-루프형 방법에서의 다결정 실리콘의 제조
JP5914240B2 (ja) * 2012-08-07 2016-05-11 株式会社トクヤマ 多結晶シリコンの製造方法
JP5879283B2 (ja) * 2013-02-13 2016-03-08 信越化学工業株式会社 トリクロロシランの製造方法
MY195545A (en) 2014-01-24 2023-01-31 Hanwha Chemical Corp Purification Method And Purification Apparatus For Off-Gas
DE102017125221A1 (de) * 2017-10-27 2019-05-02 Nexwafe Gmbh Verfahren und Vorrichtung zur Entfernung von Verunreinigungen aus Chlorsilanen
TWI682052B (zh) * 2018-06-01 2020-01-11 寶德電化材科技股份有限公司 製造結晶矽的系統及製造結晶矽的方法
EP4317062A1 (en) 2022-08-02 2024-02-07 Alexander Lygin Optimized process for silicon deposition

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120895A (ja) 1987-11-05 1989-05-12 Sanyo Electric Co Ltd 部品装着装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3147071A (en) * 1964-09-01 Process of manufacturing dichloro-
CA988275A (en) 1970-12-17 1976-05-04 Carl J. Litteral Disproportionation of chlorosilicon hydrides
BE784818A (fr) * 1971-06-14 1972-12-13 Westinghouse Electric Corp Etalonnage du profil de deplacement de la position d'un entrainement par moteur
DE3805282A1 (de) * 1988-02-19 1989-08-31 Wacker Chemitronic Verfahren zur entfernung von n-dotierenden verunreinigungen aus bei der gasphasenabscheidung von silicium anfallenden fluessigen oder gasfoermigen stoffen
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
JP3805102B2 (ja) * 1997-05-07 2006-08-02 株式会社トクヤマ トリクロロシランおよび四塩化珪素の貯蔵方法
US6060021A (en) * 1997-05-07 2000-05-09 Tokuyama Corporation Method of storing trichlorosilane and silicon tetrachloride
JP3878278B2 (ja) * 1997-05-12 2007-02-07 株式会社トクヤマ 燐含有量の少ない多結晶シリコンの製造方法
JP4038110B2 (ja) * 2001-10-19 2008-01-23 株式会社トクヤマ シリコンの製造方法
WO2003040036A1 (fr) * 2001-10-19 2003-05-15 Tokuyama Corporation Procede de production de silicium

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01120895A (ja) 1987-11-05 1989-05-12 Sanyo Electric Co Ltd 部品装着装置

Also Published As

Publication number Publication date
CN101175694A (zh) 2008-05-07
US8894959B2 (en) 2014-11-25
TW200704588A (en) 2007-02-01
EP1882675A4 (en) 2009-12-23
JP4740646B2 (ja) 2011-08-03
TWI359787B (enExample) 2012-03-11
EP1882675A1 (en) 2008-01-30
EP1882675B1 (en) 2011-07-13
WO2006123802A1 (ja) 2006-11-23
JP2006321675A (ja) 2006-11-30
US20090098039A1 (en) 2009-04-16

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Granted publication date: 20100310

Termination date: 20160515

CF01 Termination of patent right due to non-payment of annual fee