CN100591169C - Floating gate electret capacitance microphone - Google Patents
Floating gate electret capacitance microphone Download PDFInfo
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- CN100591169C CN100591169C CN200410057539A CN200410057539A CN100591169C CN 100591169 C CN100591169 C CN 100591169C CN 200410057539 A CN200410057539 A CN 200410057539A CN 200410057539 A CN200410057539 A CN 200410057539A CN 100591169 C CN100591169 C CN 100591169C
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Abstract
The invention provides a floating gate electret capacity microphone, comprising a base electrically mounted on the circuit board, and capacity microphone chip packaged in said base; wherein, the character of said capacity microphone chip is it uses the two separated conducting layers and a floating gate electret formed between these two layers to form the capacity which has the alternation when the capacity has effect to be transferred into electronic signal transmission.
Description
[technical field]
The present invention relates to a kind of microphone, particularly a kind of chip-type microphone.
[background technology]
Because the development trend of electronic product is always toward high-quality, high price, high function, and frivolous, the small and exquisite direction of volume develops, the development of microphone is no exception certainly, and, because the manufacturing of chip-type microphone development, can promote synchronously along with the progress of semiconductor and micro electronmechanical processing procedure, and can accurately control the volume size of finished product, therefore become the emphasis that microphone mainly develops.
The general employed microphone wafer of chip-type microphone, discuss from structure, can generally be divided into and use two different wafers of structure and link (bonding) all-in-one-piece twin-wafer type microphone wafer (for example Japanese kokai publication hei 11-331988 number, No. 6243474 patent application case of the U.S.), and with two kinds of the monocrystalline chip microphone wafer (for example No. 5870482 patent case of the U.S.) that directly form each detail structure from a substrate.No matter be twin-wafer type microphone wafer or monocrystalline chip microphone wafer, its operation principle all is to utilize when extraneous Burning in Effect of Sound Energy during in the vibrating diaphragm of microphone wafer, understands corresponding change electric capacity, and then converts the change of electric capacity to electronic signal and outwards transmit.
Mostly the electric capacity of past microphone wafer is to utilize two conductor layers separately, and electret formation " electret formula " electric capacity that a folder invests between this two conductor layer is main.
And at present, though existing relevant paper is applied to floating type electrode on the microphone wafer, to improve the capacitive sensing changing unit of microphone wafer, yet, since microphone wafer not only on the working knowledge field across acoustics and electronics two big categories, on processing procedure, also need integrating semiconductor processing and two kinds of correlation techniques of micro electronmechanical processing procedure simultaneously, therefore, how properly floating type electrode to be applied to the electric capacity part of microphone wafer, and integrate relevant processing procedure, promote the actual effective utilization of microphone, be still the direction that industry is made great efforts.
[summary of the invention]
Therefore, purpose of the present invention is promptly providing a kind of float gate formula electret condenser microphone of using floating type electrode with formation electric capacity.
A kind of float gate formula electret condenser microphone of the present invention comprises a pedestal, and an Electret Condencer Microphone wafer.
This pedestal has a housing that defines an accommodation space, and this housing is electrically connected on the circuit board.
This Electret Condencer Microphone wafer package is electrically connected in this accommodation space and with this housing, this Electret Condencer Microphone wafer has a base material that is connected with this housing, one induction part that upwards forms from this base material, this induction part comprises first conductor layer that is connected with base material, one with this first conductor layer second conductor layer separately, most be laid in spaced apartly this first, spacing block between two conductor layers, one is arranged at the float gate formula electret on this base material, and a vibrating diaphragm that is connected with this second conductor layer, this float gate formula electret make this first, two conductor layers constitute electric capacity jointly.
When a Burning in Effect of Sound Energy during in this induction part, this vibrating diaphragm can correspondingly produce deformation and make the electric capacity respective change, simultaneously, the air-flow that this vibrating diaphragm deformation causes is that the space between this first and second conductor layer flows in this accommodation space via these spacing blocks backlash freedom to each other.
In addition, another kind of float gate formula electret condenser microphone of the present invention comprises a pedestal, and an Electret Condencer Microphone wafer.
This pedestal has a housing that defines an accommodation space, and this housing is electrically connected on the circuit board.
This Electret Condencer Microphone wafer, be packaged in this accommodation space and and be electrically connected with this housing, this Electret Condencer Microphone wafer has one can be produced the float gate formula electret vibration unit of deformation by Burning in Effect of Sound Energy, and an air chamber unit from the downward formation of this float gate formula electret vibration unit.
This float gate formula electret vibration unit comprises that first conductor layer, that a base material, is formed on an end face of this base material is formed on a float gate formula electret in contrast to the bottom surface of this end face of this base material, and one from this more downward formation in base material bottom surface and coat the insulating barrier of this float gate formula electret.
This air chamber unit comprises one second conductor layer, reach one from the downward thickening layer that forms of this second conductor layer, this second conductor layer has one from the downward air chamber wall body that forms of this float gate formula electret vibration unit, an and image wall body from the more downward formation of this air chamber wall body, this air chamber wall body defines an air chamber space, this insulating barrier does not conduct this air chamber wall body and this float gate formula electret mutually, and this is first years old, two conductor layers borrow this float gate formula electret to constitute electric capacity jointly, this thickening layer has a wall body that thickens from the formation downwards of this image wall body, this image wall body and this thicken the common formation one of wall body and enclose the outer shroud piece that structure goes out a regional extent, and most sound hole pieces that are arranged in this regional extent each interval, this outer shroud piece makes this accommodation space be connected with this air chamber space with these sound hole piece gaps to each other.
When Burning in Effect of Sound Energy can make this corresponding generation deformation of float gate formula electret vibration unit during in this float gate formula electret vibration unit and make capacitance variations, the air-flow that this float gate formula electret vibration unit deformation is simultaneously produced can borrow this outer shroud piece and these sound hole piece gaps to each other mobile in this accommodation space and this air chamber space.
[description of drawings]
Fig. 1 is a vertical view, and one first preferred embodiment of float gate formula electret condenser microphone of the present invention is described.
Fig. 2 is the cutaway view of Fig. 1 along I-I ' hatching line, one first preferred embodiment of aid illustration float gate formula of the present invention electret condenser microphone.
Fig. 3 is the partial schematic sectional view of Fig. 1 along II-II ' hatching line, and the structure of a float gate formula electret is described.
Fig. 4 is a flow chart, and the process of making float gate formula electret as shown in Figure 3 is described.
Fig. 5 is a partial schematic sectional view, and the structure of float gate formula electret of one second preferred embodiment of float gate formula electret condenser microphone of the present invention is described.
Fig. 6 is a flow chart, and the process of making float gate formula electret as shown in Figure 5 is described.
Fig. 7 is a partial schematic sectional view, and the structure of float gate formula electret of one the 3rd preferred embodiment of float gate formula electret condenser microphone of the present invention is described.
Fig. 8 is a flow chart, and the process of making float gate formula electret as shown in Figure 7 is described.
Fig. 9 is a vertical view, and one the 4th preferred embodiment of float gate formula electret condenser microphone of the present invention is described.
Figure 10 is the partial schematic sectional view along III-III ' hatching line of Fig. 9, and the structure of a float gate formula electret is described.
[embodiment]
The present invention is described in detail below in conjunction with drawings and Examples:
The present invention as shown in Figure 1, it is one first preferred embodiment of float gate formula electret condenser microphone of the present invention, is electrically connected on electric equipment products, for example uses on the circuit board 100 of mobile phone (not shown).
Consult Fig. 1, Fig. 2 earlier, Fig. 2 is the cross-sectional schematic of Fig. 1 along a zigzag hatching line I-I ', to describe the structure of float gate formula electret condenser microphone of the present invention in detail, this float gate formula electret condenser microphone comprises a pedestal 1, a field-effect transistor 2, and an Electret Condencer Microphone wafer 3.
This pedestal 1 has a housing 11, and this housing 11 comprises a diapire 12, by the upwardly extending perisporium 13 of outer peripheral edges of this diapire 12, a loam cake 14 that can penetrate for the acoustic energy in an external world, and a plurality of electrode contacts 15 that are laid on this diapire 12.Diapire 12 defines an accommodation space 16 jointly with perisporium 13, for encapsulation field-effect transistor 2 and Electret Condencer Microphone wafer 3, loam cake 14 is connected with perisporium 13 and seals accommodation space 16, makes acoustic energy only enter and act on the Electret Condencer Microphone wafer 3 that is packaged in the accommodation space 16 by loam cake 14.Each electrode contact 15 is electrically connected on the circuit board 100 with surface adhering technology (SMT), is electrically connected with circuit board 100 for Electret Condencer Microphone wafer 3, field-effect transistor 2.
Field-effect transistor 2 is existing electronic components, be electrically connected with the partial electrode contact 15 of Electret Condencer Microphone wafer 3, pedestal 1 respectively simultaneously by a plurality of bonding wires 200 for example, and can be with the electrical change of Electret Condencer Microphone wafer 2, for example capacitance variations is transformed into electronic signal and outwards transmission.
The mode that general field-effect transistor 2 forms has two kinds, and a kind of is to prepare single electronic element in advance, is electrically connected with Electret Condencer Microphone wafer 3 in successive process again; Another kind of then be in the processing procedure that carries out Electret Condencer Microphone wafer 3, synchronously be built in the Electret Condencer Microphone microphone wafer 3.In this example and diagram, field-effect transistor 2 is with synchronous built-in being formed in the Electret Condencer Microphone wafer 3, because these integrate the technology of various electronic component in single wafer, be to belong to another kind of field category about circuit design, and non-emphasis of the present invention place, so do not add to give unnecessary details at this.
Electret Condencer Microphone wafer 3 is packaged in the accommodation space 16 of pedestal 1, and electrically connects with bonding wire 200 with the partial electrode contact 15 and the field-effect transistor 2 of pedestal 1 simultaneously.Electret Condencer Microphone wafer 3 has a base material 31 that is connected with diapire 12, and an induction part 32 that upwards forms from base material 31.
This first and second conductor layer 321,323 is respectively with a conductor material, and for example metal constitutes, and polarizable to constitute electric capacity.
These spacing blocks 322 are an annular distribution spaced apartly, each spacing block 322 has a predetermined cross sectional shape (only be rectangle with the cross section in the diagram but vary in size and be the example explanation) respectively, and make these spacing blocks 322 jointly but the space of 324 of this first conductor layers 321, vibrating diaphragm is separated out the oscillation space 325 that air feed stream flows, the gap 326 that adjacent two spacing blocks of while are 322 cooperates the formation reservation shapes, makes oscillation space 321 and accommodation space 16 borrow these gaps 326 that form reservation shapes to be connected.
Cooperate simultaneously and consult Fig. 3, Fig. 3 is the cross-sectional schematic of Fig. 1 along hatching line II-II ', float gate formula electret 33 has one and is formed on the float gate 333 that the p type zone 331 on the base material 31, two n+ type zones 332,332 ', that are formed in the p type zone 331 are formed on this two n+ type zone 332,332 ' corresponding top with being isolated from each other, and a control grid 334 that is formed on float gate 333 corresponding tops.
Consult Fig. 4, the manufacture process of above-mentioned float gate formula electret 33 is that earlier the following step 411 forms p type zone 331 on base material 31; Follow the following step 412 and in p type zone 331, form two n+ type zones 332,332 ' that are isolated from each other; And then step 413 forms float gate 333 in 332,332 ' corresponding top, two n+ type zones in proper order; Last step 414 in proper order forms control grid 334 above float gate 333 correspondences, and finish the related hardware structure, after treating that last Electret Condencer Microphone wafer 3 other dependency structure preparations are finished, again n+ type zone 332 ground connection, another n+ type zone 332 ' are applied positive voltage, and after control grid 334 applies positive voltage, make float gate 333 write negative electrical charge, can make first and second conductor layer 321,323 constitute electret formula electric capacity, finish the preparation of Electret Condencer Microphone wafer 3.Form specific MOS structure by these times step, as p type zone, n+ type zone ... processing procedure, known by industry, and non-emphasis of the present invention place, so no longer add to give unnecessary details at this.
When acoustic energy passes loam cake 14 and acts on induction part 32, vibrating diaphragm 324 is understood corresponding generation deformation and is made the electric capacity respective change, field-effect transistor 2 converts this capacitance variations to electronic signal synchronously and outwards transmits, simultaneously, the air-flow that vibrating diaphragm 324 deformation cause, can in oscillation space 321 and accommodation space 16, flow freely via a plurality of gaps, and make Electret Condencer Microphone wafer 3 have predetermined frequency response, and the predetermined effect of performance float gate formula electret condenser microphone.
Though in last example explanation, the float gate formula electret 33 of the Electret Condencer Microphone wafer 3 of float gate formula electret condenser microphone of the present invention, be with n+ type zone 332 ground connection, another n+ type zone 332 ' positively charged is pressed, after adding positive electricity and being pressed on control grid 334, make float gate 333 write negative electrical charge, and then make first, two conductor layers 321,323 are polarized to the example explanation, yet in fact, only need make two n+ type zones 332,332 ' has lower positive voltage, p type zone 331 is with low positive voltage or negative voltage, and make control electrode 334 with positive voltage than two n+ type zones 332,332 ' with p type zone 331 be height, and then after making float gate 333 write negative electrical charge, can make first, two conductor layers 321,323 form electret formula electric capacity, finish the preparation of microphone wafer 3.
Second and third preferred embodiment of float gate formula electret condenser microphone of the present invention, all similar to above-mentioned this first preferred embodiment, the float gate formula electret 33 that it does not exist together and only is Electret Condencer Microphone wafer 3, below only with regard to its explanation in detail that do not exist together.
Consult Fig. 5, the illustrated float gate formula electret 34 of second preferred embodiment of float gate formula electret condenser microphone of the present invention comprises a n type zone 341 that forms on base material 31, two p+ type zones 342 that are formed on n type zone 341 with being isolated from each other, 342 ', one is formed on two p+ type zones 342, the float gate 343 of 342 ' corresponding top, an and control grid 344 that is formed on this float gate 343 corresponding tops, when this two p+ type zone 342,342 ' is with 0 or negative voltage respectively, this n type zone 341 is with a lower positive voltage, control grid 334 with a higher positive voltage after, make float gate 343 electronegative, can make first, two conductor layers 321, the preparation of Electret Condencer Microphone wafer is finished in 323 polarization.
Certainly, this must not make yet p+ type zone 342,342 ' be with respectively 0 or negative voltage, n type zone 341 positively chargeds press, only need make that the voltage of voltage ratio control grid 344 in two p+ type zones 342,342 ', n type zone is much lower, and make float gate 343 electronegative, can reach the purpose that makes first and second conductor layer 321,323 constitute electret formula electric capacity.
And the manufacture method of the illustrated float gate formula electret 34 of second preferred embodiment is as shown in Figure 6, forms a n type zone 341 earlier on silicon substrate 31; On this n type zone, form two p+ type zones 342,342 ' that are isolated from each other again; Then form float gate 343 in this 342,342 ' corresponding top, two p+ type zone; After forming control grid 344 above float gate 343 correspondences, promptly finish the 34 structural preparations of float gate formula electret at last.Last similar upward example is illustrated, after other Electret Condencer Microphone chip architectures preparations are finished, float gate formula electret 34 is write electric charge, and then makes first and second conductor layer 321,323 constitute electric capacity, finishes the preparation of Electret Condencer Microphone wafer.
Consult Fig. 7, the float gate formula electret 35 that the 3rd preferred embodiment of float gate formula electret condenser microphone of the present invention is illustrated, has a p type zone 351 that is formed on the base material 31, three n+ type zones 352 that are formed in the p type zone 351 spaced apart, the 2nd n+ type zone 353, the 3rd n+ type zone 354, one is formed on first, two n+ type zones 352, the float gate 355 of 353 corresponding tops, reach one and be formed on second, three n+ type zones 353, the control grid 356 of 354 corresponding tops, be with a positive voltage when making a n+ type zone 352, the 351 and the 3rd n+ type zone, p type zone 354 ground connection, and after making control grid 356 with a positive voltage a little less than the voltage in a n+ type zone 352, make float gate 355 write positive charge, can make this first, two conductor layers 321,323 constitute electret formula electric capacity.
And the manufacture method of the illustrated float gate formula electret 35 of the 3rd preferred embodiment is as shown in Figure 8, forms p type zone 351 earlier on silicon substrate 31; In p type zone 351, form three first, second and third isolated n+ type zones 352,353,354 again; Above first and second n+ type zone 352,353 correspondences, form float gate 355 then; Above second and third n+ type zone 353,354 correspondences, form control grid 356 at last, finish the 35 structural preparations of float gate formula electret; Illustrated in last similar first preferred embodiment, after other Electret Condencer Microphone chip architecture preparations are finished, write electric charge, and then make these first and second conductor layer 321,323 polarization constitute electric capacity, finish the preparation of Electret Condencer Microphone wafer.
Certainly, the personnel that are familiar with the motor circuit technology know, owing to above-mentioned p, n type zone, structure, write electric charge mode or the like and have in addition that corresponding conversion produces the characteristic of multiple variation combination, therefore must be by the foregoing description dependency structure of multiple these correspondent transforms of deriving of being derived again; Yet owing to its basic structure is included by the above embodiment of the present invention, and the mode of these correspondent transforms combinations is numerous, therefore no longer these counter structures, the electrical variation is given unnecessary details one by one for example at this.
Moreover, because these a little specific MOS structures,, and form the processing procedure of those structures with the MOS processing procedure as p, n type zone, n+ type zone, known by industry, and non-emphasis of the present invention place, so also no longer add to give unnecessary details at this.
Fig. 9 is that one the 4th preferred embodiment of float gate formula electret condenser microphone of the present invention is electrically connected on electric equipment products, for example uses on the circuit board 100 of mobile phone (scheming not shown).This float gate formula electret condenser microphone comprises a pedestal 5, a field-effect transistor 2 ', and an Electret Condencer Microphone wafer 6.
This pedestal 5 has a housing 51, this housing 51 comprises a diapire 52, by the upwardly extending perisporium 53 of outer peripheral edges of this diapire 52, a loam cake 54 that can penetrate for the acoustic energy in an external world, and a plurality of electrode contact 55 (only illustrating an electrode contact in the diagram is the example explanation) that is laid on this perisporium on the wall body of this diapire 52.Diapire 52 defines an accommodation space 56 jointly with perisporium 53, for encapsulation field-effect transistor 2 ' and Electret Condencer Microphone wafer 6, loam cake 54 is connected with perisporium 53 and seals accommodation space 56, makes acoustic energy only enter and act on the Electret Condencer Microphone wafer 6 that is packaged in the accommodation space 56 by loam cake 54.Electrode contact 55 is electrically connected on the circuit board 100 with surface adhering technology (SMT), is electrically connected with circuit board 100 for Electret Condencer Microphone wafer 6, field-effect transistor 2 '.
Field-effect transistor 2 ' is an existing electronic component, be electrically connected with the electrode contact 55 of Electret Condencer Microphone wafer 6, pedestal 5 respectively simultaneously by a plurality of bonding wires 200 for example, and can be with the electrical change of Electret Condencer Microphone wafer 6, for example, be transformed into electronic signal and outwards transmission with capacitance variations.
The mode that general field-effect transistor 2 ' forms has two kinds, and a kind of is to prepare single electronic element in advance, is electrically connected with Electret Condencer Microphone wafer 6 in successive process again; Another kind of then be in the processing procedure that carries out Electret Condencer Microphone wafer 6, be built in synchronously in the Electret Condencer Microphone microphone wafer 6.In this example and diagram, be example explanation, be electrically connected owing to the preparation of field-effect transistor and with other electronic components such as Electret Condencer Microphone wafer with the former, known by industry, and non-emphasis of the present invention place, so do not add to give unnecessary details at this.
Electret Condencer Microphone wafer 6 is packaged in the accommodation space 56 of pedestal 5, and is electrically connected with bonding wire 200 with the electrode contact 55 and the field-effect transistor 2 ' of pedestal 5 simultaneously.Electret Condencer Microphone wafer 6 has a float gate formula electret vibration unit 7, and the air chamber unit 8 from these float gate formula electret vibration unit 7 downward formation.
The etching stopping layer 73, one in contrast to the bottom surface of this end face that first conductor layer 72, that this float gate formula electret vibration unit 7 comprises a base material 71, be formed on an end face of this base material 71 is formed on this base material 71 is formed on the float gate formula electret 74 of these etching stopping layer 73 bottom surfaces, and one from this more downward formation in etching stopping layer 73 bottom surfaces and coat the insulating barrier 75 of this float gate formula electret 73.The cross section of this first conductor layer 72 slightly becomes V-shape, is formed with conductive conductor material; This etching stopping layer 73 mainly is to cooperate processing procedure and etch the necessary structure of desired depth, will describe in detail in the lump when processing procedure illustrates; This insulating barrier 75 is formed with insulating material, and its function will cooperate 8 explanations in the lump of follow-up air chamber unit.
Cooperate and consult Figure 10, Figure 10 is the cross-sectional schematic of Fig. 9 along hatching line III-III ', this float gate formula electret 74 is similar to aforesaid float gate formula electret 33, has a p type zone 331 that is formed on the etching stopping layer 73, two n+ type zones 332 that are formed in the p type zone 331 with being isolated from each other, 332 ', one is formed on this two n+ type zone 332, the float gate 333 of 332 ' corresponding top, an and control grid 334 that is formed on the corresponding top of float gate 333, its forming process is to be similar to process shown in Figure 4, its process that only is Fig. 4 that do not exist together is to form p type zone 331 on silicon substrate 31, and be on etching stopping layer 73, to form p type zone 331 herein, because processing procedure, structure is all similar, so repeat no longer in detail at this.
This air chamber unit 8 comprises one second conductor layer 81, and the thickening layers 82 from these second conductor layer, 81 downward formation.
This second conductor layer 81 is to form in modes such as plating, sputter, evaporations with conductive conductor material, has one from the insulating barrier 75 downward air chamber wall bodies 811 that form, and an image wall body 812 from these air chamber wall body 811 more downward formation.This air chamber wall body 811 defines an air chamber space 83.This insulating barrier 75 makes this second conductor layer 81 not conduct mutually with this float gate formula electret 74.This thickening layer 82 has one and thickens wall body 821 from what this image wall body 812 formed downwards, this image wall body 812 thickens wall body 821 common formation one with this and encloses the outer shroud piece 84 that structure goes out a regional extent, and a plurality of sound hole pieces 85 that are arranged in this regional extent each interval, this outer shroud piece 84 makes accommodation space 56 be connected with air chamber space 83 with these sound hole pieces 85 gap 86 to each other.
When making n+ type zone 332 ground connection, this another n+ type zone 332 ' apply positive voltage, and after control grid 334 adds positive voltage, make float gate 333 write negative electrical charge, and then make first and second conductor layer 72,81 constitute electret formula electric capacity.
When acoustic energy enters when acting on float gate formula electret vibration unit 7 from loam cake 54, float gate formula electret vibration unit 7 can produce deformation and then produce capacitance variations, relends to imitate a crystal 2 ' convert outwards transmission after the electronic signal to; The air-flow that these float gate formula electret vibration unit 7 deformation are simultaneously produced can borrow this outer shroud piece 84 and these sound hole pieces 85 gap 86 to each other to flow in accommodation space 56 and air chamber space 83, makes float gate formula electret condenser microphone of the present invention have good frequency response.
Certainly, float gate formula electret condenser microphone at above-mentioned illustrated the 4th preferred embodiment, the relevant processing procedure of its float gate formula electret 74 and this structure, also can use instead as float gate formula electret illustrated in second and third preferred embodiment 34,35 and prepared by its relevant processing procedure, because the detail structure of this part and processing procedure are given unnecessary details at this no longer one by one in aforementioned detailed description.In addition, the process of each structure of application semiconductor and micro electronmechanical processing procedure formation Electret Condencer Microphone wafer 6 is known by industry on silicon substrate, and non-emphasis of the present invention place, so each step is also no longer added to give unnecessary details.
As shown in the above description, float gate formula electret condenser microphone of the present invention, mainly be that float gate formula electret is used micro electronmechanical and manufacture of semiconductor, integration is applied in original monocrystalline chip microphone wafer, the backboard formula microphone wafer, to form the most important capacitive part of these microphone wafer, simultaneously, cooperate other structure of microphone wafer, not only can prepare the Electret Condencer Microphone wafer simply, simultaneously can reach purpose of the present invention really so that the float gate formula electret condenser microphone of making has better frequency response.
Claims (7)
1. a float gate formula electret condenser microphone comprises a pedestal, and an Electret Condencer Microphone wafer, it is characterized in that:
This pedestal has a housing that defines an accommodation space, and this housing is electrically connected on the circuit board;
This Electret Condencer Microphone wafer package is electrically connected in this accommodation space and with this housing, this Electret Condencer Microphone wafer has a base material that is connected with this housing, an and induction part that upwards forms from this base material, this induction part comprises first conductor layer that is connected with base material, one with this first conductor layer second conductor layer separately, a plurality of be laid in spaced apartly this first, spacing block between two conductor layers, one is arranged at the float gate formula electret on this base material, and a vibrating diaphragm that is connected with this second conductor layer, this float gate formula electret make this first, two conductor layers constitute electret formula electric capacity jointly;
When a Burning in Effect of Sound Energy during in this induction part, this vibrating diaphragm is understood corresponding generation deformation and is made the electric capacity respective change, simultaneously, the space of air-flow between this first and second conductor layer that cause of this vibrating diaphragm deformation flows in this accommodation space via these spacing blocks backlash freedom to each other.
2 one kinds of float gate formula electret condenser microphones comprise a pedestal, and an Electret Condencer Microphone wafer, it is characterized in that:
This pedestal has a housing that defines an accommodation space, and this housing is electrically connected on the circuit board;
This Electret Condencer Microphone wafer package is electrically connected in this accommodation space and with this housing, has:
One can be produced the float gate formula electret vibration unit of deformation by Burning in Effect of Sound Energy, first conductor layer, one that comprise a base material, is formed on an end face of this base material is formed on a float gate formula electret in contrast to the bottom surface of this end face of this base material, and one from this more downward formation in base material bottom surface and coat the insulating barrier of this float gate formula electret; And
One from the downward air chamber unit that forms of this float gate formula electret vibration unit, comprise one second conductor layer, reach one from the downward thickening layer that forms of this second conductor layer, this second conductor layer has one from the downward air chamber wall body that forms of this float gate formula electret vibration unit, an and image wall body from the more downward formation of this air chamber wall body, this air chamber wall body defines an air chamber space, this insulating barrier does not conduct this air chamber wall body and this float gate formula electret mutually, and this is first years old, two conductor layers borrow this float gate formula electret to constitute electret formula electric capacity jointly, this thickening layer has a wall body that thickens from the formation downwards of this image wall body, this image wall body and this thicken the common formation one of wall body and enclose the outer shroud piece that structure goes out a regional extent, and a plurality of sound hole pieces that are arranged in this regional extent each interval, this outer shroud piece makes this accommodation space be connected with this air chamber space with these sound hole piece gaps to each other;
This float gate formula electret vibration unit is corresponding to be produced deformation and makes capacitance variations when Burning in Effect of Sound Energy can make during in this float gate formula electret vibration unit, and the air-flow that this float gate formula electret vibration unit deformation is simultaneously produced can borrow this outer shroud piece and these sound hole piece gaps to each other mobile in this accommodation space and this air chamber space.
3 float gate formula electret condenser microphones as claimed in claim 1 or 2 is characterized in that: this float gate formula electret condenser microphone also comprises one and converts this capacitance variations the field-effect transistor of an electronic signal to.
4 float gate formula electret condenser microphones as claimed in claim 1 or 2, it is characterized in that: this float gate formula electret comprises a p type zone that is formed on this base material, two are formed on the n+ type zone in this p type zone with being isolated from each other, one is formed on the float gate of this corresponding top, two n+ type zone, an and control grid that is formed on this float gate correspondence top, this two n+ type zone is applied with low-voltage, this p type zone also is applied with a voltage that is lower than the voltage that this two n+ type zone applied, and make this control grid apply one far above this two n+ type zone voltage that applies, and can make this float gate write negative electrical charge, and then make this first, two conductor layers constitute electret formula electric capacity.
5 float gate formula electret condenser microphones as claimed in claim 1 or 2, it is characterized in that: this float gate formula electret comprises a n type zone that is formed on this base material, two are formed on the p+ type zone in this n type zone with being isolated from each other, one is formed on the float gate of this corresponding top, two p+ type zone, an and control grid that is formed on this float gate correspondence top, this two p+ type zone is applied with negative voltage, and after making this control grid apply a positive voltage, can make this float gate write negative electrical charge, so make this first, two conductor layers constitute electret formula electric capacity.
6 float gate formula electret condenser microphones as claimed in claim 1 or 2, it is characterized in that: this float gate formula electret comprises a p type zone that is formed on this base material, three are formed on the n+ type zone in this p type zone with being isolated from each other, the 2nd n+ type zone and the 3rd n+ type zone, one be formed on this first, the float gate of corresponding top, the 2nd n+ type zone, and one be formed on this second, the control grid of corresponding top, the 3rd n+ type zone, with the 3rd n+ type zone and this p type zone ground connection, the one n+ type zone applies positive voltage, and make this control grid have one be lower than this n+ type zone with the positive voltage of positive voltage, and make this float gate write positive charge, and then make this first, two conductor layers constitute electret formula electric capacity.
7 as float gate formula electret condenser microphone as described in the claim 2, and it is characterized in that: this second conductor layer is to form to be selected from the group that is made of following manner with a conductive conductor material: plating, sputter, evaporation, and the combination of these modes.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200410057539A CN100591169C (en) | 2004-08-17 | 2004-08-17 | Floating gate electret capacitance microphone |
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| CN200410057539A CN100591169C (en) | 2004-08-17 | 2004-08-17 | Floating gate electret capacitance microphone |
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| CN1738489A CN1738489A (en) | 2006-02-22 |
| CN100591169C true CN100591169C (en) | 2010-02-17 |
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| CN108966100B (en) * | 2018-06-25 | 2020-02-21 | 歌尔股份有限公司 | MEMS microphone |
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2004
- 2004-08-17 CN CN200410057539A patent/CN100591169C/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN1738489A (en) | 2006-02-22 |
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