CN104541521B - Shock resistance silicon substrate MEMS microphone, the system comprising the microphone and encapsulation - Google Patents
Shock resistance silicon substrate MEMS microphone, the system comprising the microphone and encapsulation Download PDFInfo
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- CN104541521B CN104541521B CN201380019408.7A CN201380019408A CN104541521B CN 104541521 B CN104541521 B CN 104541521B CN 201380019408 A CN201380019408 A CN 201380019408A CN 104541521 B CN104541521 B CN 104541521B
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 130
- 239000010703 silicon Substances 0.000 title claims abstract description 130
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 128
- 239000000758 substrate Substances 0.000 title claims abstract description 88
- 230000035939 shock Effects 0.000 title claims abstract description 81
- 238000005538 encapsulation Methods 0.000 title abstract description 5
- 239000011148 porous material Substances 0.000 claims abstract description 35
- 230000007246 mechanism Effects 0.000 claims abstract description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 239000012212 insulator Substances 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 claims description 5
- 238000012360 testing method Methods 0.000 abstract description 15
- 238000010586 diagram Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 241000209140 Triticum Species 0.000 description 2
- 235000021307 Triticum Nutrition 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- -1 silicon nitrides Chemical class 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
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- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R7/00—Diaphragms for electromechanical transducers; Cones
- H04R7/16—Mounting or tensioning of diaphragms or cones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2307/00—Details of diaphragms or cones for electromechanical transducers, their suspension or their manufacture covered by H04R7/00 or H04R31/003, not provided for in any of its subgroups
- H04R2307/023—Diaphragms comprising ceramic-like materials, e.g. pure ceramic, glass, boride, nitride, carbide, mica and carbon materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Pressure Sensors (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Micromachines (AREA)
Abstract
The present invention relates to a kind of shock resistance silicon substrate MEMS microphone, the system comprising the microphone and encapsulation.The microphone includes：Silicon base, it is provided with dorsal pore；Compliance vibrating diaphragm, it is supported in the silicon base and is arranged on above the dorsal pore of the silicon base；Perforation backboard, it is arranged on above the vibrating diaphragm and the air gap is accompanied between the vibrating diaphragm, and is wherein additionally provided with one or more first through hole；Amplitude limiting mechanism, including one or more T-shaped amplitude limit parts corresponding with one or more of first through hole, each amplitude limit part has bottom and top, the bottom is through its corresponding first through hole and is connected to the vibrating diaphragm, the top separates and can freely vertically moved with the perforation backboard, wherein, the vibrating diaphragm and the perforation backboard are used for being formed the battery lead plate of variable condenser.In the shock resistance microphone, the amplitude limiting mechanism helps to limit fragile and frangible vibrating diaphragm generation as significantly moving caused by the acoustic pressure shock wave in fall-down test, so as to prevent the vibrating diaphragm to be damaged.
Description
Technical field
The present invention relates to microphone techniques field, more specifically to a kind of shock resistance silicon substrate MEMS microphone, includes
The system of the microphone and encapsulation.
Background technology
Silicon substrate MEMS microphone, that is, described acoustic transducer, have been researched and developed for many years.Silicon substrate MEMS microphone by
Can be wide in its potential advantages in terms of miniaturization, performance, reliability, environmental durability, cost and mass production capabilities
It is used for generally in many applications, such as mobile phone, tablet personal computer, camera, audiphone, intelligent toy and monitoring arrangement.
In general, silicon substrate MEMS microphone includes fixed perforation backboard and highly conforming properties vibrating diaphragm, in the backboard and is somebody's turn to do
Formed with the air gap between vibrating diaphragm.The perforation backboard and the compliance vibrating diaphragm for forming variable air gap capacitor lead to
It is commonly formed in single silicon base, one of them is exposed by forming the dorsal pore portion of directing out in silicon base.
Patent application No.WO 02/15636 discloses a kind of acoustic transducer, and the acoustic transducer has formed with dorsal pore
Substrate, be made up of low stress polysilicon and the vibrating diaphragm above the dorsal pore of the substrate and be arranged on described
Cover part (being equivalent to the backboard) above vibrating diaphragm.The vibrating diaphragm can be in the flat surfaces parallel to the cover part
Own layer in transverse shifting, therefore, it is possible to discharge its intrinsic stress, so as to produce very consistent mechanical compliance.
Patent document PCT/DE97/02740 discloses a kind of miniaturization microphone, wherein, form wheat using SOI substrate
The cmos circuit of gram wind and correlation.Specifically, the backboard of microphone is formed using the silicon layer of SOI substrate, the backboard is in SOI
The surface of dorsal pore formed in substrate, the polysilicon membrane then deposited are used as the vibrating diaphragm of microphone, the polysilicon membrane
There is in the top of the backboard and between the two the air gap, the polysilicon membrane passes through the perforate in the backboard and described
Dorsal pore in SOI substrate exposes to outside.
When encapsulating silicon microphone, generally it is installed on printed circuit board (PCB) (PCB), and makes institute's shape in microphone substrate
Into dorsal pore alignd with the acoustic aperture formed on pcb board so that external acoustic waves can easily arrive at the vibrating diaphragm of microphone and make
It vibrates.For example, Fig. 1 shows the sectional view of the example arrangement of conventional silicon substrate MEMS microphone package.As shown in figure 1,
In the MEMS microphone package of routine, MEMS microphone 10 ' and other integrated circuits 20 are arranged on pcb board 30, and with covering
Son 40 seals, wherein, the acoustic aperture formed on the dorsal pore 140 and pcb board 30 formed in the substrate 100 of MEMS microphone 10 '
35 alignment.External acoustic waves or acoustic pressure shock wave as illustrated by the arrows in fig. 1 pass through acoustic aperture 35 and microphone on pcb board 30
Dorsal pore 140 in 10 ' substrate 100, vibrate the vibrating diaphragm 200 of microphone 10 '.
However, it can be seen that, either single conventional MEMS microphone still has this wheat in from the description above
The conventional MEMS microphone encapsulation of gram wind all has a problem that, i.e., the fragile and frangible vibrating diaphragm of conventional MEMS microphone due to
Such as caused very high acoustic pressure is impacted and easily suffered damage in fall-down test.
The content of the invention
In order to solve the above problems, the present invention provides a kind of shock resistance silicon substrate MEMS microphone with amplitude limiting mechanism, should
Amplitude limiting mechanism helps to limit fragile and frangible vibrating diaphragm generation as big caused by the acoustic pressure shock wave in such as fall-down test
Amplitude shift is moved, so as to prevent vibrating diaphragm to be damaged.
In one aspect of the invention, there is provided a kind of shock resistance silicon substrate MEMS microphone, it includes：Silicon base, wherein setting
There is dorsal pore；Compliance vibrating diaphragm, it is supported in the silicon base and is arranged on above the dorsal pore of the silicon base；Perforation backboard, if
Put on the vibrating diaphragm and the air gap is accompanied between the vibrating diaphragm, and be wherein additionally provided with one or more first through hole；With
And amplitude limiting mechanism, including one or more T-shaped amplitude limit parts corresponding with one or more of first through hole, each amplitude limit part tool
There are bottom and top, the bottom is through its corresponding first through hole and is connected to the vibrating diaphragm, and the top is carried on the back with the perforation
Plate is separated and can freely vertically moved, wherein, the vibrating diaphragm and the perforation backboard are used for forming the electricity of variable condenser
Pole plate.
Preferably, each amplitude limit part in one or more of amplitude limit parts can be by the stack layer of one or more materials
It is made, the material is selected from the group that metal, semiconductor and insulator are formed.
Preferably, the shock resistance silicon substrate MEMS microphone may further include prodger, the prodger from it is described
The lower surface of the relative perforation backboard of vibrating diaphragm protrudes.
Preferably, the compliance vibrating diaphragm can be by a part or more for the silicon device layer being layered in the silicon base
Crystal silicon layer is formed, and between the silicon base accompanies oxide skin(coating).
Preferably, the perforation backboard can be formed by the CMOS passivation layers of embedded metal layer, wherein, the metal level is used
Make the battery lead plate of the backboard, either the perforation backboard can be formed by polysilicon layer or SiGe layer.
In one example, the shock resistance silicon substrate MEMS microphone may further include interconnection post, and the interconnection post is set
Put between the vibrating diaphragm edge and the back plate edges, for electrically to the vibrating diaphragm to outer lead, and described shake
The week edge of film is fixed.In which case it is preferred to ground, the amplitude limiting mechanism can include an amplitude limit part, the amplitude limit part
Bottom be connected to the center of the vibrating diaphragm, or the amplitude limiting mechanism can include multiple amplitude limit parts, the plurality of amplitude limit part
Bottom uniformly and/or is symmetrically attached to the vibrating diaphragm in the adjacent edges of the vibrating diaphragm.
In another example, the shock resistance silicon substrate MEMS microphone may further include interconnection post, the interconnection post
It is arranged between the vibrating diaphragm center and the backboard center, for being suspended and the vibrating diaphragm electrically on mechanics
To the vibrating diaphragm to outer lead, and all edges of the vibrating diaphragm can free vibration.In which case it is preferred to ground, the amplitude limit
Mechanism can include multiple amplitude limit parts, the bottom of the plurality of amplitude limit part the vibrating diaphragm adjacent edges uniformly and/or symmetrically
It is connected to the vibrating diaphragm.
In another aspect of this invention, there is provided a kind of shock resistance silicon substrate MEMS microphone, it includes：Silicon base, wherein setting
There is dorsal pore；Perforation backboard, it is supported in the silicon base and is arranged on above the dorsal pore of the silicon base；Compliance vibrating diaphragm, if
Put above the perforation backboard and accompany the air gap between the perforation backboard and be wherein additionally provided with one or more the
One through hole；And amplitude limiting mechanism, including one or more T-shaped amplitude limit parts corresponding with one or more of first through hole, often
Individual amplitude limit part has bottom and top, and the bottom is through its corresponding first through hole and is connected to the perforation backboard, on this
Portion separates with the vibrating diaphragm, wherein, the perforation backboard and the vibrating diaphragm are used for forming the battery lead plate of variable condenser.
Preferably, each amplitude limit part can be by the stack layer system of one or more materials in one or more of amplitude limit parts
Into the material is selected from the group that metal, semiconductor and insulator are formed.
Preferably, the shock resistance silicon substrate MEMS microphone may further include prodger, the prodger from it is described
The lower surface of the relative vibrating diaphragm of perforation backboard protrudes.
Preferably, the perforation backboard can be by the part or polycrystalline of the silicon device layer being layered in the silicon base
Silicon layer is formed, and between the silicon base accompanies oxide skin(coating).
Preferably, the compliance vibrating diaphragm can be formed by polysilicon layer or SiGe layer.
In another aspect of this invention, there is provided a kind of microphone system, it includes integrating above-mentioned on a single chip
One shock resistance silicon substrate MEMS microphone and cmos circuit.
In still another aspect of the invention, there is provided a kind of microphone package, it includes：Pcb board；On the pcb board
Any of the above-described shock resistance silicon substrate MEMS microphone；And the lid of the microphone is sealed, wherein it is possible in the pcb board
With on any one of the lid formed with acoustic aperture so that external acoustic waves can pass through the acoustic aperture or through the acoustic aperture
Dorsal pore with the silicon base, makes diaphragm oscillations.
From the above description, it will be seen that acoustic pressure shock wave that ought be caused in such as fall-down test passes through institute of the present invention
Dorsal pore in substrate in the single microphone or microphone system stated or through in microphone package of the present invention
Pcb board on acoustic aperture and microphone substrate in dorsal pore so that during the diaphragm oscillations of the microphone, the amplitude limit machine
Structure can prevent vibrating diaphragm from significantly being offset away from backboard, and the backboard can prevent vibrating diaphragm from significantly being offset towards backboard, therefore,
Shock resistance silicon substrate MEMS microphone of the present invention can limit its fragile and frangible vibrating diaphragm and occur by such as fall-down test
In acoustic pressure shock wave caused by significantly move, so as to the machinery for reducing the stress concentrated on vibrating diaphragm, adding vibrating diaphragm
Stability and vibrating diaphragm is prevented to be damaged in fall-down test.
Although each embodiment has been briefly described above, it is to be understood that, not necessarily all embodiment all includes same spy
Sign, in certain embodiments, some above-mentioned features not necessarily, and are desirable to exist.Various other spies are described more fully below
Sign, embodiment and benefit.
Brief description of the drawings
From the following description of the accompanying drawings of embodiments, the purpose of the present invention and feature will become apparent, in accompanying drawing
In：
Fig. 1 is sectional view, shows an example arrangement of conventional silicon substrate MEMS microphone package；
Fig. 2 is sectional view, shows the structure of the shock resistance silicon substrate MEMS microphone described in the first embodiment of the present invention；
Fig. 3 is plan, exemplary patterns of the microphone diaphragm for showing in Fig. 2 when side is seen from it；
Fig. 4 and Fig. 5 is sectional view, respectively illustrates significantly skew of the microphone diaphragm in Fig. 2 away and towards backboard；
Fig. 6 is sectional view, shows the structure of the shock resistance silicon substrate MEMS microphone described in the second embodiment of the present invention；
Fig. 7 is plan, exemplary patterns of the microphone diaphragm for showing in Fig. 6 when side is seen from it；
Fig. 8 is sectional view, shows the structure of the shock resistance silicon substrate MEMS microphone described in the third embodiment of the present invention；
Fig. 9 is sectional view, shows the structure of the shock resistance silicon substrate MEMS microphone described in the fourth embodiment of the present invention；
And
Figure 10 is sectional view, shows an exemplary knot of shock resistance silicon substrate MEMS microphone package of the present invention
Structure.
Embodiment
Below with reference to the accompanying drawings the various aspects of claimed theme are described, wherein, figure in accompanying drawing be it is schematical,
Carry out picture not in scale, and indicate same element using same reference in all the drawings.Retouched in following
In stating, for illustrative purposes, many details are elaborated, to provide the thorough understanding of one or more aspects.But
It will be apparent that in terms of it can also realize these in the case of there is no these details.In other situations, known structure and
Device is shown in block diagram form, in order to describe one or more aspects.
In specification and appended book, it is to be understood that when a certain layer, region, part are referred to as another
When layer, another region or another part " on " or " under ", it can be " direct " or " indirect " it is another at this
On or below layer, region or part, or there may also be one or more intermediate layers.
In general, shock resistance silicon substrate MEMS microphone of the present invention includes silicon base, compliance provided with dorsal pore
Vibrating diaphragm, perforation backboard and amplitude limiting mechanism, wherein, the vibrating diaphragm and the backboard are used for being formed the battery lead plate of variable condenser.
The top for the dorsal pore that the compliance vibrating diaphragm can be supported in the silicon base and be arranged in the silicon base, and described wear
Hole backboard is arranged on above the vibrating diaphragm, and accompanies the air gap between the two.In this case, enter in the perforation backboard
One step is provided with one or more first through hole, and the amplitude limiting mechanism can include it is one or more with it is one or more of
T-shaped amplitude limit part corresponding to first through hole, each T-shaped amplitude limit part have bottom and top, and the bottom is corresponding first logical through its
Hole and the vibrating diaphragm is connected to, the top separates and can freely vertically moved with the perforation backboard.Or described wear
The top for the dorsal pore that hole backboard can be supported in the silicon base and be arranged in the silicon base, and the compliance vibrating diaphragm
It is arranged on above the perforation backboard, and accompanies the air gap between the two.In this case, further set in the vibrating diaphragm
There are one or more first through hole, and the amplitude limiting mechanism can lead to including one or more with one or more of first
T-shaped amplitude limit part corresponding to hole, each amplitude limit part have bottom and top, and the bottom is through its corresponding first through hole and connects
To the perforation backboard, the top separates with the vibrating diaphragm.
The creative concept of the present invention is as follows：Caused acoustic pressure shock wave passes through institute of the present invention in such as fall-down test
Dorsal pore in the substrate for the shock resistance microphone stated, make the diaphragm oscillations of the microphone.When the vibrating diaphragm is away from the backboard
When offseting to a certain extent, the top of one or more of amplitude limit parts will limit the vibrating diaphragm and be offset further away from the backboard,
And when the vibrating diaphragm is offset to a certain extent towards the backboard, the backboard will limit the vibrating diaphragm further towards the backboard
Skew.Therefore, shock resistance silicon substrate MEMS microphone of the present invention can limit its fragile and frangible vibrating diaphragm and occur by example
Significantly moving as caused by the acoustic pressure shock wave in fall-down test, so as to prevent the vibrating diaphragm to be damaged in fall-down test.
According to the specific forming process of the microphone, each amplitude limit part can be by one in one or more of amplitude limit parts
Kind or the stack layer of multiple material formed, the material is selected from metal (copper, aluminium, titanium etc.), semiconductor (such as polysilicon)
And insulator (combination such as including LPCVD or PEVCD oxides, PSG or BPSG oxides or above-mentioned oxide
CMOS passivating materials of CMOS dielectrics Si oxide including PECVD silicon nitrides etc.) group that is formed.
In addition, in order to prevent the vibrating diaphragm from clinging the backboard, shock resistance silicon substrate MEMS microphone of the present invention can
To further comprise prodger, it is described perforation backboard be arranged in the situation above the vibrating diaphragm, the prodger from it is described
The lower surface of the relative perforation backboard of vibrating diaphragm protrudes, and is arranged on the situation above the perforation backboard in the vibrating diaphragm
In, the prodger protrudes from the lower surface of the vibrating diaphragm relative with the perforation backboard.
Hereinafter, by embodiments of the invention are described in detail with reference to the attached drawings to illustrate the structure of above-mentioned microphone.
(first embodiment)
Fig. 2 is sectional view, shows the structure of the shock resistance silicon substrate MEMS microphone described in the first embodiment of the present invention.
Fig. 3 is plan, exemplary patterns of the microphone diaphragm for showing in Fig. 2 when side is seen from it.MEMS microphone can connect
Receive acoustic signal and the acoustic signal received is converted into electrical signal and be used for follow-up processing and output.As shown in Fig. 2 this
Shock resistance silicon substrate MEMS microphone 10a described in the first embodiment of invention includes the silicon base 100 provided with dorsal pore 140, conduction
Property and compliance vibrating diaphragm 200, perforation backboard 400 and the air gap 150.Use such as silicon on insulator (SOI) chip
On the part of silicon device layer such as top silicon fiml or form vibrating diaphragm using the polysilicon membrane formed by deposition process
200, vibrating diaphragm 200 is layered in silicon base 100 and oxide skin(coating) 120 is accompanied between silicon base 100.Perforation backboard 400 is located at
The top of vibrating diaphragm 200, and formed by embedded metal layer 400b CMOS passivation layers, wherein, metal level 400b is used as backboard 400
Battery lead plate.In another example, perforation backboard 400 can be formed by polysilicon layer or low temperature SiGe layer.Between air
Gap 150 is formed between vibrating diaphragm 200 and backboard 400.Electric conductivity and compliance vibrating diaphragm 200 are used as electrode and vibration film, should
Vibration film response arrives at external acoustic waves or the acoustic pressure shock wave of vibrating diaphragm 200 to vibrate by dorsal pore 140.Backboard 400 provides
Microphone 10a another electrode, and multiple second through holes 430 are formed with, second through hole 430 leads to for air
Wind, the air damping that will be run into during vibration with reducing vibrating diaphragm 200 to start.Therefore, the battery lead plate of vibrating diaphragm 200 and backboard 400 is formed
Variable condenser, the variable condenser have the extraction electrode for the extraction electrode 410 of vibrating diaphragm 200 and for backboard 400
420。
Shock resistance silicon substrate MEMS microphone 10a may further include interconnection post 600, and the interconnection post 600 is arranged on vibrating diaphragm
Between 200 edge and the edge of backboard 400, for electrically outwards entering line lead, all edges of vibrating diaphragm 200 to vibrating diaphragm 200
It is fixed.
Shock resistance silicon substrate MEMS microphone 10a may further include prodger 500, the prodger 500 from vibrating diaphragm 200
The lower surface of relative perforation backboard 400 protrudes, for preventing vibrating diaphragm 200 from clinging backboard 400.
Microphone 10a said structure and its manufacture are described in detail in international application No.PCT/CN2010/075514
The example of method, the related content of the international application are incorporated herein by reference.
In addition, in the shock resistance silicon substrate MEMS microphone 10a described in the first embodiment of the present invention, as shown in Fig. 2
Perforation backboard 400 is centrally formed first through hole 450, and includes in the amplitude limiting mechanism that is centrally formed of vibrating diaphragm 200, the amplitude limiting mechanism
One T-shaped amplitude limit part 700 corresponding with first through hole 450, T-shaped amplitude limit part 700 have bottom 710 and top 720, bottom 710
The center of vibrating diaphragm 200 is connected to through its corresponding first through hole 450 and as shown in Figure 3, top 720 and perforation backboard 400
Separate and can freely vertically move.In the first embodiment, amplitude limit part 700 from top to bottom can be by stack gradually one
CMOS dielectrics silicon oxide layer and three CMOS passivation layers are formed, and the oxide skin(coating) and the first two passivation layer form amplitude limit
The bottom 710 of part 700, and last passivation layer then forms the top 720 of amplitude limit part 700.In the present invention, it should be noted that
The shape of the amplitude limit part is not necessarily accurate T-shaped.In fact, the amplitude limit part of any similar T-shaped can, as long as its underpart
Can pass through first through hole 450 for use as connecting portion and its top cannot pass through first through hole 450 for use as limiting unit.
Fig. 4 and Fig. 5 is sectional view, respectively illustrates the microphone diaphragm in Fig. 2 away from backboard and towards backboard significantly
Skew.
As shown in figure 4, when vibrating diaphragm 200 is offset to a certain extent under acoustic pressure shock wave away from the backboard, amplitude limit part
700 top 720 is offset into contact with the upper surface of backboard 400 so as to limit vibrating diaphragm 200 further away from backboard 400.Such as figure
Shown in 5, when vibrating diaphragm 200 is offset to a certain extent under acoustic pressure shock wave towards backboard 400, backboard 400 will limit vibrating diaphragm 200
Offset further towards backboard 400.Therefore, the shock resistance silicon substrate MEMS microphone 10a described in first embodiment of the invention can be with
Its fragile and frangible vibrating diaphragm 200 is limited to occur as significantly moving caused by the acoustic pressure shock wave in such as fall-down test, from
And the vibrating diaphragm is prevented to be damaged in fall-down test.
(second embodiment)
Fig. 6 is sectional view, shows the structure of the shock resistance silicon substrate MEMS microphone described in the second embodiment of the present invention.
Fig. 7 is plan, exemplary patterns of the microphone diaphragm for showing in Fig. 6 when side is seen from it.
Comparison diagram 6 and Fig. 2 and comparison diagram 7 and Fig. 3, the shock resistance silicon substrate MEMS microphone 10b described in second embodiment
It is with the difference of the shock resistance silicon substrate MEMS microphone in first embodiment, in a second embodiment, in backboard 400
Adjacent edges are uniform and/or are asymmetrically formed multiple first through hole 450, and uniform and/or right in the adjacent edges of vibrating diaphragm 200
Ground is claimed to form the amplitude limiting mechanism for including multiple amplitude limit parts 700, the plurality of amplitude limit part 700 is corresponding with multiple first through hole 450, each
T-shaped amplitude limit part 700 has bottom 710 and top 720, and bottom 710 is through its corresponding first through hole 450 and as shown in Figure 7
Vibrating diaphragm 200 is connected in the adjacent edges of vibrating diaphragm 200, and top 720 separates and freely vertical can moved with perforation backboard 400
It is dynamic.
(3rd embodiment)
Fig. 8 is sectional view, shows the structure of the shock resistance silicon substrate MEMS microphone described in the third embodiment of the present invention.
Comparison diagram 8 and Fig. 6, shock resistance silicon substrate MEMS microphone 10c in 3rd embodiment with it is anti-in second embodiment
The difference of impact silicon substrate MEMS microphone is that in the third embodiment, shock resistance silicon substrate MEMS microphone 10c includes mutual
Join post 600, the interconnection post 600 is arranged between the center of vibrating diaphragm 200 and the center of backboard 400, on mechanics to vibrating diaphragm
200 are suspended and are electrically outwards entering line lead to vibrating diaphragm 200, and all edges of vibrating diaphragm 200 can free vibration.In international application
Microphone 10c said structure and its example of manufacture method, the world are described in detail in No.PCT/CN2010/075514
The related content of application is incorporated herein by reference.
In the third embodiment, it is similar to second embodiment, the adjacent edges of backboard 400 are uniform and/or symmetrical landform
Into multiple first through hole 450, and vibrating diaphragm 200 adjacent edges uniformly and/or be asymmetrically formed including multiple amplitude limit parts 700
Amplitude limiting mechanism, the plurality of amplitude limit part 700 is corresponding with multiple first through hole 450, and each T-shaped amplitude limit part 700 has bottom 710 and upper
Portion 720, bottom 710 through its corresponding first through hole 450 and are connected to vibrating diaphragm 200, top in the adjacent edges of vibrating diaphragm 200
720 separate and can freely vertically move with perforation backboard 400.
Reference picture 2- Fig. 8 describes three embodiments of shock resistance silicon substrate MEMS microphone of the present invention, however, this
Invention not limited to this.As an alternative, shock resistance silicon substrate MEMS microphone of the present invention can have a structure in which,
In the structure shown here, perforate backboard above the dorsal pore of the silicon base, and compliance vibrating diaphragm then it is described perforation backboard top,
One or more T-shaped amplitude limit parts pass through first through hole corresponding to the one or more formed on the vibrating diaphragm and are fixed on
Perforate on backboard, as being described in detail in following fourth embodiment.
(fourth embodiment)
Fig. 9 is sectional view, shows the structure of the shock resistance silicon substrate MEMS microphone described in the fourth embodiment of the present invention.
As shown in figure 9, the shock resistance silicon substrate MEMS microphone 10d described in the fourth embodiment of the present invention includes：Silicon provided with dorsal pore 140
Substrate 100；It is supported in silicon base 100 and is arranged on the perforation backboard 400 of the top of dorsal pore 140 of silicon base 100；It is arranged on
The top of perforation backboard 400 simultaneously accompanies the compliance vibrating diaphragm 200 of the air gap 150 between the perforation backboard 400.Perforation backboard
400 and vibrating diaphragm 200 be used for forming the battery lead plate of variable condenser, the variable condenser has the extraction electrode for backboard 400
420 and the extraction electrode 410 for vibrating diaphragm 200.Perforation backboard 400 can utilize the silicon that high temperature can be resisted in subsequent treatment
The part of device layer or polysilicon layer are formed, and it is layered in the silicon base and oxide is accompanied between silicon base
Layer.Compliance vibrating diaphragm 200 can be formed by polysilicon layer and low temperature SiGe layer.
In addition, shock resistance silicon substrate MEMS microphone 10d may further include prodger 500, the prodger 500 is from wearing
The lower surface of the relative vibrating diaphragm 200 of hole backboard 400 protrudes, for preventing vibrating diaphragm 200 from clinging backboard 400.
In addition, being centrally formed first through hole 250 in vibrating diaphragm 200, and amplitude limit machine is centrally formed in perforation backboard 400
Structure, the amplitude limiting mechanism include a T-shaped amplitude limit part 700 corresponding with first through hole 250, and T-shaped amplitude limit part 700 has bottom 710
With top 720, bottom 710 passes through its corresponding first through hole 250 and is connected to the center of perforation backboard 400, and top 720
Separated with vibrating diaphragm 200.In the present embodiment, amplitude limit part 700 from top to bottom can be by a CMOS dielectric silicon stacking gradually
Either semiconductor or insulator or its combination (are preferably two by metal by oxide skin(coating), a polysilicon layer and two
CMOS passivation layers, for example, SiN) other layers for forming are formed, and the oxide skin(coating), the polysilicon layer and first
Other layers form the bottom 710 of amplitude limit part 700, and second other layers then form the top 720 of amplitude limit part 700.
It should be noted that in another example, uniformly and/or can be asymmetrically formed more in the adjacent edges of vibrating diaphragm 200
Individual first through hole 250, and the adjacent edges in backboard 400 uniformly and/or can be asymmetrically formed including multiple amplitude limit parts 700
Amplitude limiting mechanism, the plurality of amplitude limit part 700 is corresponding with multiple first through hole 250, and each T-shaped amplitude limit part 700 has bottom 710 and upper
Portion 720, bottom 710 are connected to backboard 400 through its corresponding first through hole 250 and in the adjacent edges of backboard 400, and on
Portion 720 separates with vibrating diaphragm 200.
In addition, each amplitude limit part in one or more of amplitude limit parts can be by the stack layer system of one or more materials
Into the material is selected from metal (copper, aluminium, titanium etc.), semiconductor (such as polysilicon) and insulator (such as including LPCVD
Or the CMOS dielectrics Si oxide including PECVD silicon nitrides of PEVCD oxides, PSG or BPSG oxides or its combination
CMOS passivating materials etc.) group that is formed.
Reference picture 9, when vibrating diaphragm 200 is offset to a certain extent under acoustic pressure shock wave away from backboard 400, it can be touched
The top 720 of amplitude limit part 700, offset so as to the top 720 of amplitude limit part 700 by vibrating diaphragm 200 is limited further away from backboard 400.
When vibrating diaphragm 200 is offset to a certain extent under acoustic pressure shock wave towards backboard 400, it is further that backboard 400 will limit vibrating diaphragm 200
Offset towards backboard 400.Therefore, it is fragile and easy can to limit it by the shock resistance silicon substrate MEMS microphone 10d in fourth embodiment
Broken vibrating diaphragm 200 occurs as significantly moving caused by the acoustic pressure shock wave in such as fall-down test, so as to prevent the vibrating diaphragm from existing
It is damaged in fall-down test.
In addition, any shock resistance silicon substrate MEMS microphone of the present invention can be integrated in one single chip with cmos circuit
On to form microphone system.
Hereinafter, with reference to figure 10 microphone package of the present invention will be described briefly.
Figure 10 is sectional view, shows an example arrangement of silicon substrate MEMS microphone package of the present invention.Such as
Shown in Figure 10, microphone package of the present invention includes pcb board, shock resistance silicon substrate MEMS of the present invention provided with acoustic aperture
Microphone and lid.
Specifically, in shock resistance silicon substrate MEMS microphone package of the present invention, as shown in Figure 10, institute of the present invention
The shock resistance silicon substrate MEMS microphone 10 and other integrated circuits 20 stated are arranged on pcb board 30, and are sealed by lid 40, its
In, the dorsal pore 140 formed in the substrate 100 of MEMS microphone 10 aligns with the acoustic aperture 35 formed on pcb board 30.Such as Figure 10
In arrow shown in external acoustic waves or acoustic pressure shock wave through the acoustic aperture 35 and the substrate 100 of microphone 10 on pcb board 30
In dorsal pore 140, vibrate the vibrating diaphragm 200 of microphone 10.
It should be noted that acoustic aperture 35 can be formed on any one of pcb board and lid, as long as external acoustic waves can pass through
The acoustic aperture makes diaphragm oscillations through the dorsal pore in the acoustic aperture and the silicon base.
When acoustic pressure shock wave caused in such as fall-down test passes through the pcb board in microphone package of the present invention
Acoustic aperture 35 on 30 and the dorsal pore 140 in the substrate 100 of microphone 10 and make microphone 10 vibrating diaphragm 200 vibrate when, amplitude limit machine
Structure can prevent vibrating diaphragm 200 from the significantly skew away from backboard 400 occurs, and backboard 400 can prevent vibrating diaphragm 200 from direction occurs
The significantly skew of backboard 400, so as to which silicon substrate MEMS microphone package of the present invention can prevent vibrating diaphragm 200 in fall-down test
In be damaged.
Description of the invention provided above can be such that any technical staff in this area manufactures or using the disclosure.For
For those of skill in the art, to the disclosure, various modifications may be made is apparent from, and in the essence without departing from the present invention
The General Principle defined here can be applied in the case of god and scope in other modifications.Therefore, the disclosure is not to use
To be limited on example as described herein, but it is used for the widest range one with meeting principle disclosed herein and new feature
Cause.
Claims (18)
1. a kind of shock resistance silicon substrate MEMS microphone, including：
Silicon base, it is provided with dorsal pore；
Compliance vibrating diaphragm, be supported in the silicon base and be arranged on above the dorsal pore of the silicon base, the compliance film and
Oxide skin(coating) is accompanied between silicon base；
Perforation backboard, it is arranged on above the vibrating diaphragm and the air gap is accompanied between the vibrating diaphragm, and is wherein additionally provided with one
Or multiple first through hole；And
Amplitude limiting mechanism, including one or more T-shaped amplitude limit parts corresponding with one or more of first through hole, each amplitude limit part
With bottom and top, the bottom is through its corresponding first through hole and is connected to the vibrating diaphragm, the top and the perforation
Backboard is separated and can freely vertically moved,
Wherein, the vibrating diaphragm and the perforation backboard are used for being formed the battery lead plate of variable condenser.
2. shock resistance silicon substrate MEMS microphone according to claim 1, wherein,
Each amplitude limit part in one or more of amplitude limit parts is made up of the stack layer of one or more materials, material choosing
The group formed from metal, semiconductor and insulator.
3. shock resistance silicon substrate MEMS microphone according to claim 1, further comprises prodger, the prodger from institute
The lower surface for stating the relative perforation backboard of vibrating diaphragm protrudes.
4. shock resistance silicon substrate MEMS microphone according to claim 1, wherein,
The compliance vibrating diaphragm is formed by the part or polysilicon layer of the silicon device layer being layered in the silicon base, and with
Oxide skin(coating) is accompanied between the silicon base.
5. shock resistance silicon substrate MEMS microphone according to claim 1, wherein,
The perforation backboard is formed by the CMOS passivation layers of embedded metal layer, wherein, the metal level is used as the backboard
Battery lead plate.
6. shock resistance silicon substrate MEMS microphone according to claim 1, wherein,
The perforation backboard is formed by polysilicon layer or SiGe layer.
7. shock resistance silicon substrate MEMS microphone according to claim 1, wherein,
The shock resistance silicon substrate MEMS microphone further comprises interconnecting post, and the interconnection post is arranged on the vibrating diaphragm edge and described
Between back plate edges, for electrically to the vibrating diaphragm to outer lead, and the vibrating diaphragm week along being fixed.
8. shock resistance silicon substrate MEMS microphone according to claim 7, wherein,
The amplitude limiting mechanism includes an amplitude limit part, and its underpart is connected to the center of the vibrating diaphragm.
9. shock resistance silicon substrate MEMS microphone according to claim 7, wherein,
The amplitude limiting mechanism includes multiple amplitude limit parts, and its underpart uniformly and/or symmetrically connects in the adjacent edges of the vibrating diaphragm
To the vibrating diaphragm.
10. shock resistance silicon substrate MEMS microphone according to claim 1, wherein,
The shock resistance silicon substrate MEMS microphone further comprises interconnecting post, and the interconnection post is arranged on the vibrating diaphragm center and described
Between backboard center, for being suspended on mechanics to the vibrating diaphragm and electrically to the vibrating diaphragm to outer lead, and
All edges of the vibrating diaphragm can free vibration.
11. shock resistance silicon substrate MEMS microphone according to claim 10, wherein,
The amplitude limiting mechanism includes multiple amplitude limit parts, and its underpart uniformly and/or symmetrically connects in the adjacent edges of the vibrating diaphragm
To the vibrating diaphragm.
12. a kind of shock resistance silicon substrate MEMS microphone, including：
Silicon base, it is provided with dorsal pore；
Perforation backboard, it is supported in the silicon base and is arranged on above the dorsal pore of the silicon base；
Compliance vibrating diaphragm, it is arranged on above the perforation backboard and accompanies the air gap between the perforation backboard, and wherein
It is additionally provided with one or more first through hole；And
Amplitude limiting mechanism, including one or more T-shaped amplitude limit parts corresponding with one or more of first through hole, each amplitude limit part
With bottom and top, the bottom is through its corresponding first through hole and is connected to the perforation backboard, the top with it is described
Vibrating diaphragm separates,
Wherein, the perforation backboard and the vibrating diaphragm are used for being formed the battery lead plate of variable condenser.
13. shock resistance silicon substrate MEMS microphone according to claim 12, wherein,
Each amplitude limit part in one or more of amplitude limit parts is made up of the stack layer of one or more materials, the material
The group formed selected from metal, semiconductor and insulator.
14. shock resistance silicon substrate MEMS microphone according to claim 12, further comprises prodger, the prodger from
The lower surface of the relative vibrating diaphragm of the perforation backboard protrudes.
15. shock resistance silicon substrate MEMS microphone according to claim 12, wherein,
The perforation backboard is formed by the part or polysilicon layer of the silicon device layer being layered in the silicon base, and with
Oxide skin(coating) is accompanied between the silicon base.
16. shock resistance silicon substrate MEMS microphone according to claim 12, wherein,
The compliance vibrating diaphragm is formed by polysilicon layer or SiGe layer.
17. a kind of microphone system, including the anti-impact described in integrated claim 1 or claim 12 on a single chip
Hit silicon substrate MEMS microphone and cmos circuit.
18. a kind of microphone package, including：Pcb board；Claim 1 or claim 12 institute on the pcb board
The shock resistance silicon substrate MEMS microphone stated；And the lid of the microphone is sealed, wherein, in the pcb board and the lid
Any one of on formed with acoustic aperture so that external acoustic waves are through the acoustic aperture or through in the acoustic aperture and the silicon base
Dorsal pore, make diaphragm oscillations.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2013/080908 WO2015017979A1 (en) | 2013-08-06 | 2013-08-06 | An anti-impact silicon based mems microphone, a system and a package with the same |
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| Publication Number | Publication Date |
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| CN104541521A CN104541521A (en) | 2015-04-22 |
| CN104541521B true CN104541521B (en) | 2017-12-26 |
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| CN201380019408.7A Active CN104541521B (en) | 2013-08-06 | 2013-08-06 | Shock resistance silicon substrate MEMS microphone, the system comprising the microphone and encapsulation |
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| Country | Link |
|---|---|
| US (1) | US9462389B2 (en) |
| KR (1) | KR101614330B1 (en) |
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| US20160212542A1 (en) | 2016-07-21 |
| US9462389B2 (en) | 2016-10-04 |
| KR101614330B1 (en) | 2016-04-21 |
| CN104541521A (en) | 2015-04-22 |
| WO2015017979A1 (en) | 2015-02-12 |
| KR20150031427A (en) | 2015-03-24 |
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