CN100587924C - Esd保护器件及其制造方法 - Google Patents

Esd保护器件及其制造方法 Download PDF

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Publication number
CN100587924C
CN100587924C CN200480009252A CN200480009252A CN100587924C CN 100587924 C CN100587924 C CN 100587924C CN 200480009252 A CN200480009252 A CN 200480009252A CN 200480009252 A CN200480009252 A CN 200480009252A CN 100587924 C CN100587924 C CN 100587924C
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CN
China
Prior art keywords
base
esd
protection device
esd protection
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200480009252A
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English (en)
Chinese (zh)
Other versions
CN1823408A (zh
Inventor
詹姆斯·D·惠特菲尔德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1823408A publication Critical patent/CN1823408A/zh
Application granted granted Critical
Publication of CN100587924C publication Critical patent/CN100587924C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200480009252A 2003-04-04 2004-03-31 Esd保护器件及其制造方法 Expired - Fee Related CN100587924C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/407,687 US7074687B2 (en) 2003-04-04 2003-04-04 Method for forming an ESD protection device
US10/407,687 2003-04-04

Publications (2)

Publication Number Publication Date
CN1823408A CN1823408A (zh) 2006-08-23
CN100587924C true CN100587924C (zh) 2010-02-03

Family

ID=33097596

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200480009252A Expired - Fee Related CN100587924C (zh) 2003-04-04 2004-03-31 Esd保护器件及其制造方法

Country Status (6)

Country Link
US (1) US7074687B2 (https=)
JP (1) JP4532480B2 (https=)
KR (1) KR101054664B1 (https=)
CN (1) CN100587924C (https=)
TW (1) TW200509358A (https=)
WO (1) WO2004090940A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723823B2 (en) * 2008-07-24 2010-05-25 Freescale Semiconductor, Inc. Buried asymmetric junction ESD protection device
US9356443B2 (en) * 2012-07-31 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. ESD clamp for multiple power rails
CN206946908U (zh) * 2017-06-28 2018-01-30 罗伯特·博世有限公司 高侧栅极驱动器
TWI841213B (zh) * 2018-12-24 2024-05-01 晶元光電股份有限公司 半導體元件
CN111599859B (zh) * 2019-02-21 2023-06-23 株洲中车时代半导体有限公司 一种具有过压保护功能的晶闸管及制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959332A (en) * 1994-08-19 1999-09-28 Stmicroelectronics, S.R.L. Electrostatic-discharge protection device and method for making the same
US6130117A (en) * 1996-12-17 2000-10-10 Lsi Logic Corporation Simple bicmos process for creation of low trigger voltage SCR and zener diode pad protection
US6218226B1 (en) * 2000-01-21 2001-04-17 Vanguard International Semiconductor Corporation Method of forming an ESD protection device
US6586818B1 (en) * 2002-03-08 2003-07-01 International Business Machines Corporation Self-aligned silicon germanium heterojunction bipolar transistor device with electrostatic discharge crevice cover for salicide displacement

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US1436703A (en) * 1921-03-07 1922-11-28 Herman W Fisher Rope handle
US1584122A (en) * 1924-08-07 1926-05-11 Mark M Moore Skipping device
DE1930746U (de) * 1965-01-13 1966-01-05 Jan Hendrik Otto Sprungseil.
US4090705A (en) * 1977-03-21 1978-05-23 Ross Young Jump rope
US4505474A (en) * 1984-05-25 1985-03-19 Mattox Ernest M Weighted elastomeric jumping device
US4801137A (en) * 1987-10-26 1989-01-31 Shane Douglass Variable weight hand held exercise apparatus
US4890829A (en) * 1988-09-19 1990-01-02 Priscilla Burton Jump rope
JPH04291953A (ja) * 1991-03-20 1992-10-16 Fujitsu Ltd 保護回路
IT1253682B (it) 1991-09-12 1995-08-22 Sgs Thomson Microelectronics Struttura di protezione dalle scariche elettrostatiche
US5284458A (en) * 1992-02-05 1994-02-08 Perry Deborah A Exercise device
US5215509A (en) * 1992-05-18 1993-06-01 Meyer/Glass Design Rope jumping device
US5477414A (en) 1993-05-03 1995-12-19 Xilinx, Inc. ESD protection circuit
JP2601143B2 (ja) * 1993-06-17 1997-04-16 日本電気株式会社 半導体装置
US5369054A (en) 1993-07-07 1994-11-29 Actel Corporation Circuits for ESD protection of metal-to-metal antifuses during processing
DE69524858T2 (de) * 1995-02-28 2002-07-18 Stmicroelectronics S.R.L., Agrate Brianza Bauelement zum Schutz einer integrierten Schaltung gegen elektrostatische Entladungen
US5940258A (en) 1996-02-29 1999-08-17 Texas Instruments Incorporated Semiconductor ESD protection circuit
US6125021A (en) 1996-04-30 2000-09-26 Texas Instruments Incorporated Semiconductor ESD protection circuit
US5850095A (en) 1996-09-24 1998-12-15 Texas Instruments Incorporated ESD protection circuit using zener diode and interdigitated NPN transistor
US5982217A (en) 1997-02-19 1999-11-09 Texas Instruments Incorporated PNP driven NMOS ESD protection circuit
US6140683A (en) 1997-05-08 2000-10-31 Texas Instruments Incorporated Efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
US5898205A (en) 1997-07-11 1999-04-27 Taiwan Semiconductor Manufacturing Co. Ltd. Enhanced ESD protection circuitry
US5946177A (en) 1998-08-17 1999-08-31 Motorola, Inc. Circuit for electrostatic discharge protection
US6310379B1 (en) 1999-06-03 2001-10-30 Texas Instruments Incorporated NMOS triggered NMOS ESD protection circuit using low voltage NMOS transistors
US6424013B1 (en) 1999-07-09 2002-07-23 Texas Instruments Incorporated Body-triggered ESD protection circuit
US6249410B1 (en) 1999-08-23 2001-06-19 Taiwan Semiconductor Manufacturing Company ESD protection circuit without overstress gate-driven effect
TW469622B (en) 1999-09-13 2001-12-21 Koninkl Philips Electronics Nv Semiconductor device with ESD protection
US6327126B1 (en) 2000-01-28 2001-12-04 Motorola, Inc. Electrostatic discharge circuit
US6385021B1 (en) 2000-04-10 2002-05-07 Motorola, Inc. Electrostatic discharge (ESD) protection circuit
US6472286B1 (en) 2000-08-09 2002-10-29 Taiwan Semiconductor Manufacturing Company Bipolar ESD protection structure
US6724603B2 (en) 2002-08-09 2004-04-20 Motorola, Inc. Electrostatic discharge protection circuitry and method of operation
US6879476B2 (en) 2003-01-22 2005-04-12 Freescale Semiconductor, Inc. Electrostatic discharge circuit and method therefor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5959332A (en) * 1994-08-19 1999-09-28 Stmicroelectronics, S.R.L. Electrostatic-discharge protection device and method for making the same
US6130117A (en) * 1996-12-17 2000-10-10 Lsi Logic Corporation Simple bicmos process for creation of low trigger voltage SCR and zener diode pad protection
US6218226B1 (en) * 2000-01-21 2001-04-17 Vanguard International Semiconductor Corporation Method of forming an ESD protection device
US6586818B1 (en) * 2002-03-08 2003-07-01 International Business Machines Corporation Self-aligned silicon germanium heterojunction bipolar transistor device with electrostatic discharge crevice cover for salicide displacement

Also Published As

Publication number Publication date
JP4532480B2 (ja) 2010-08-25
WO2004090940A2 (en) 2004-10-21
US20040195630A1 (en) 2004-10-07
TW200509358A (en) 2005-03-01
KR20050118719A (ko) 2005-12-19
US7074687B2 (en) 2006-07-11
KR101054664B1 (ko) 2011-08-08
WO2004090940A3 (en) 2005-11-03
JP2006522489A (ja) 2006-09-28
CN1823408A (zh) 2006-08-23

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PB01 Publication
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SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Texas in the United States

Patentee after: NXP America Co Ltd

Address before: Texas in the United States

Patentee before: Fisical Semiconductor Inc.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100203

Termination date: 20190331