CN100580970C - 存储单元及其制造方法 - Google Patents
存储单元及其制造方法 Download PDFInfo
- Publication number
- CN100580970C CN100580970C CN200710186766A CN200710186766A CN100580970C CN 100580970 C CN100580970 C CN 100580970C CN 200710186766 A CN200710186766 A CN 200710186766A CN 200710186766 A CN200710186766 A CN 200710186766A CN 100580970 C CN100580970 C CN 100580970C
- Authority
- CN
- China
- Prior art keywords
- memory cell
- hydrogen
- electrode
- cell according
- resistive structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/041—Modification of the switching material, e.g. post-treatment, doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/612,501 US7834339B2 (en) | 2006-12-19 | 2006-12-19 | Programmable-resistance memory cell |
US11/612,501 | 2006-12-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101237024A CN101237024A (zh) | 2008-08-06 |
CN100580970C true CN100580970C (zh) | 2010-01-13 |
Family
ID=39526118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710186766A Expired - Fee Related CN100580970C (zh) | 2006-12-19 | 2007-11-16 | 存储单元及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7834339B2 (zh) |
CN (1) | CN100580970C (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101207179B (zh) * | 2006-12-19 | 2012-05-23 | 国际商业机器公司 | 存储器单元及其制造方法 |
WO2010085226A1 (en) * | 2009-01-26 | 2010-07-29 | Hewlett-Packard Development Company, L.P. | Using alloy electrodes to dope memristors |
US20130026434A1 (en) * | 2010-01-29 | 2013-01-31 | Jianhua Yang | Memristor with controlled electrode grain size |
GB2482666B (en) * | 2010-08-03 | 2012-06-20 | Dna Electronics Ltd | Chemical sensor |
US11462683B2 (en) | 2020-04-22 | 2022-10-04 | Massachusetts Institute Of Technology | CMOS-compatible protonic resistive devices |
CN112599667A (zh) * | 2020-12-15 | 2021-04-02 | 长江先进存储产业创新中心有限责任公司 | 一种相变存储器及其制作方法 |
CN113488589B (zh) * | 2021-06-28 | 2023-11-28 | 深圳市华星光电半导体显示技术有限公司 | 忆阻器件、忆阻器件制作方法及显示面板 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4839700A (en) * | 1987-12-16 | 1989-06-13 | California Institute Of Technology | Solid-state non-volatile electronically programmable reversible variable resistance device |
-
2006
- 2006-12-19 US US11/612,501 patent/US7834339B2/en not_active Expired - Fee Related
-
2007
- 2007-11-16 CN CN200710186766A patent/CN100580970C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101237024A (zh) | 2008-08-06 |
US7834339B2 (en) | 2010-11-16 |
US20080142925A1 (en) | 2008-06-19 |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171128 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171128 Address after: American New York Patentee after: Core USA second LLC Address before: New York grams of Armand Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100113 Termination date: 20191116 |
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CF01 | Termination of patent right due to non-payment of annual fee |