CN100580912C - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN100580912C
CN100580912C CN200610073629A CN200610073629A CN100580912C CN 100580912 C CN100580912 C CN 100580912C CN 200610073629 A CN200610073629 A CN 200610073629A CN 200610073629 A CN200610073629 A CN 200610073629A CN 100580912 C CN100580912 C CN 100580912C
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China
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mentioned
bonding wire
spun gold
salient pole
capillary
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CN200610073629A
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CN1866505A (zh
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仓谷英敏
新川秀之
英贺文昭
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NEC Electronics Corp
Renesas Electronics Corp
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Renesas Technology Corp
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Abstract

提供一种半导体装置及其制造方法，可防止键合丝之间的电气短路或者凸块电极剥落，并且可稳定地制造。该半导体装置具有：带有焊盘的芯片；在焊盘上所形成的凸块电极；针脚键合在凸块电极上的键合丝，其中，键合丝满足(弹性系数/每单位面积的断裂强度)≥400的条件。另外，还具有用于密封芯片、凸块电极以及键合丝的密封树脂，优选为密封树脂的螺旋流动性大于等于110cm并且粘度小于10Pa·S。

Description

半导体装置及其制造方法
技术领域
本发明涉及一种具有：带有焊盘的芯片、在焊盘上形成的凸块电极(bump electrode)、被针脚键合(stitch bonding)到凸块电极上的键合丝的半导体装置及其制造方法。
背景技术
在将金丝直接针脚键合到芯片上的铝焊盘上的情况下，毛细管(capillary)的负荷集中，裂纹进入到铝焊盘下的SiO2层间绝缘膜中。因此在芯片-芯片之间的引线键合中使用凸块电极(例如参照专利文献1)。另外，在薄型封装中，为了使金丝的高度降低而进行使用了凸块电极的反键合(reverse bonding)。
图10(a)(b)是示出现有的形成凸块电极的状态的截面图。首先，如图10(a)所示，在芯片的铝焊盘11上由从毛细管12排出的金丝13形成凸块电极14。然后，如图10(b)所示，通过用钳子15夹着金丝13向上提拉来切断金丝13。
另外，图11(a)(b)是示出现有的向凸块电极针脚键合金丝的状态的截面图。首先，如图11(a)所示，通过毛细管12将金丝13按压在凸块电极14上，并使用超声波振动将金丝13破碎并接合到凸块电极14上。其后，如图11(b)所示，通过用钳子15夹着金丝13向上提拉来切断金丝13。
[专利文献1]日本专利申请特开2001-15541号公报
但是，在现有的由金丝形成凸块电极或者向凸块电极针脚键合金丝的过程中，由于作为凸块电极14的材料的金丝是柔软的，因此利用毛细管12和凸块电极14夹着的金丝13的按压破碎将变得不充分，因此金丝13不能够变得充分地薄。由此，由于金丝13的强度变大，因而，出现由于在切断金丝13时的反作用力造成的金丝13的扭曲和凸块电极14从铝焊盘11上的剥落。另外，在现有的凸块电极的形成中也发生同样的现象。其结果，存在由于扭曲而使金丝13弯曲成S形从而造成金丝之间电气短路、以及由于凸块电极14剥落而形成电气断路的问题。
为了解决该问题，可使用以更低的加力就能被切断的软型的金丝。但是，这种软型的金丝的弹性系数低，因此具有当密封树脂流过时金丝流动，金丝之间发生电气短路的问题。
发明内容
本发明正是为了解决上述问题而完成的，其目的在于获得防止键合丝之间发生电气短路或者凸块电极的剥落、可稳定地制造的半导体装置及其制造方法。
根据本发明的第一方面(权利要求1)的半导体装置，具有：带有焊盘的芯片；在焊盘上所形成的凸块电极；以及针脚键合在凸块电极上的键合丝，其中，键合丝满足(弹性系数/每单位面积的断裂强度)≥400的条件。
根据本发明的第二方面(权利要求3)的半导体装置的制造方法，具有：使用通过毛细管的键合丝在焊盘上形成凸块电极的工序；在形成凸块电极的工序之后，使毛细管以至少大于等于键合丝和毛细管的内壁之间的间隙的振幅沿着横向方向进行动作的工序；在使毛细管沿着横向方向进行动作的工序之后，通过用钳子夹着键合丝向上提拉来切断键合丝的工序，其中，作为键合丝采用满足(弹性系数/每单位面积的断裂强度)≥400的条件的键合丝。
根据本发明的第三方面(权利要求4)的半导体装置的制造方法，具有：使用毛细管将键合丝针脚键合在凸块电极上的工序；在针脚键合的工序之后，使毛细管以至少大于等于键合丝和毛细管的内壁之间的间隙的振幅沿着横向方向进行动作的工序；在使毛细管沿着横向方向进行动作的工序之后，通过用钳子夹着键合丝向上提拉来切断键合丝的工序，其中，作为键合丝采用满足(弹性系数/每单位面积的断裂强度)≥400的条件的键合丝。后面将明确本发明的其他特征。
根据本发明，由于能够维持键合丝弹性系数的同时以低的加力切断键合丝，因此可防止键合丝之间的电气短路或者凸块电极的剥落，可稳定制造高集成化的半导体装置。
附图说明
图1是示出根据本发明实施方式1的半导体装置的一个例子的截面图(a)以及俯视图(b)。
图2是示出形成凸块电极的工序的截面图。
图3是示出将金丝针脚键合在凸块电极上的工序的截面图。
图4是示出金丝延伸率和应力的关系的图。
图5是示出金丝延伸率和金丝的流线曲率(flow curvature)的图。
图6是示出根据本发明的实施方式1的半导体装置的另一个例子的截面图(a)以及俯视图(b)。
图7是示出根据本发明的实施方式1的半导体装置的再一个例子的截面图(a)以及俯视图(b)。
图8是示出根据本发明实施方式2的半导体装置的制造方法的截面图。
图9是示出根据本发明实施方式3的半导体装置的制造方法的截面图。
图10是示出现有的凸块电极形成的样子的截面图。
图11是示出现有的向凸块电极上针脚键合金丝的样子的截面图。
(符号说明)
11：铝焊盘；12：毛细管；13：金丝；14：凸块电极；23、44、45、52：芯片；25、47、54：密封树脂
具体实施方式
(实施方式1)
图1(a)是示出根据本发明实施方式1的半导体装置的一个例子的截面图，图1(b)是其俯视图。在裸片焊盘(die pad)21上并排搭载着芯片22和芯片23。该芯片22、23和引线24通过金丝13相连接。另外，在芯片23的铝焊盘11上形成有凸块电极14。并且，金丝13被球键合在芯片22的铝焊盘上，且被针脚键合在凸块电极14上。而且，整体利用密封树脂25密封。
图2(a)～(c)是示出形成凸块电极的工序的截面图。首先，如图2(a)所示，通过由吹管31放电，熔融从毛细管12排出的金丝13的前端，形成直径比金丝13大的金球32。其后，如图2(b)所示，使用毛细管12将金球32按压到在台架上所配置的芯片23的铝焊盘11上，通过施加加力、热、超声波等将金球32和铝焊盘11的界面接合。之后，如图2(c)所示，用钳子15夹住在毛细管12上部的金丝13并提拉，在金球32的上部切断金丝13。这样，利用从毛细管12排出的金丝13，在铝焊盘11上形成凸块电极14。
图3(a)、(b)是示出在凸块电极上针脚键合金丝的工序的截面图。首先，和图2(a)一样，在从毛细管12排出的金丝13的前端形成金球32，如图3(a)所示，使用毛细管12，将金丝13的前端金球32球键合在芯片22的铝焊盘上(第一键合)。其后，从毛细管12排出从金球32延伸的金丝13，一直伸展到凸块电极14上，然后利用毛细管12将金丝13按压到凸块电极14上，按压时间为10ms，并使用超声波振动，将从金球32延伸的金丝13的一部分针脚键合在凸块电极14上(第二键合)。然后，如图3(b)所示，通过用钳子15夹着金丝13向上提拉来切断金丝13(尾部切断)。这样一来，利用从毛细管12排出的金丝13，形成将芯片22的铝焊盘和凸块电极14电气连接的金丝13。
这里，在本发明中，为了防止键合丝之间的电气短路或者凸块电极的剥落，对金丝13的材质进行如下设定。首先，图4是示出金丝的延伸率和应力之间的关系的图。对金丝A向长度方向施加拉伸应力，则其在延伸率变为4％时被切断，此时的应力(断裂强度)是12.4gf。同样地，金丝B在其延伸率为7％时被切断，此时应力是9.5gf；金丝C在其延伸率为11％时被切断，此时应力是8.8gf；金丝D在其延伸率为15％时被切断，此时应力是8.3gf。而金丝E是软型的金丝，与硬型金丝A～D相比断裂强度低。
另外，在对金丝施加应力时，其最初是弹性形变，其后是塑性形变。该弹性形变时的斜率对应于金丝的弹性系数(又称弹性模量)。硬型的金丝A～D的弹性系数分别是9.4、9.3、9、8.5(×103kgf/mm2)，软型金丝E与它们相比弹性系数低。
为了防止由于在切断金丝时反作用力引起的金丝的扭曲(变形)或者凸块电极14从铝焊盘11上剥落，优选使用断裂强度低的金丝。这是因为在断裂强度低的金丝上，直到断裂为止所施加的最大负荷小，而且断裂时作为反作用力释放的能量也小。另外，为了防止金丝变形优选为弹性系数高的金丝。这是因为弹性系数高的金丝能够更好地抑制施加能量时的变形。因此，弹性系数和每单位面积上的断裂强度的比，即(弹性系数(kgf/mm2)/每单位面积的断裂强度(kgf/mm2))高时为优选。但是，存在弹性系数高的键合丝像上述金丝A那样断裂强度高，且断裂强度低的键合丝像上述金丝E那样弹性系数低的倾向。
于是，将满足以下条件的材料作为金丝来使用。
(弹性系数(kgf/mm2)/每单位面积的断裂强度(kgf/mm2))≥400
由此，由于能够在维持键合丝弹性系数的同时以低的加力切断键合丝，因此能够稳定地制造防止伴随着键合丝的变形而产生的键合丝之间的电气短路或者凸块电极的剥落，且高集成化的半导体装置。特别是，在断裂时键合丝的延伸率高的、例如至少大于等于6％，优选是大于等于10％的材料上，容易像金丝B、C、D那样获得高弹性系数、低断裂强度这样的特性。
另外，在本发明中，为了防止密封树脂流过时金丝流动，金丝之间电气短路，对密封树脂的材质进行如下设定。首先，图5(a)、(b)是示出金丝的延伸率和金丝的流线曲率的图。所谓金丝的流线曲率是在用密封树脂密封时流动的金丝的曲率。另外，图5(a)是使用了螺旋流动性(spiral flow)小于110cm，并且粘度大于等于10Pa·S的树脂的情况，图5(b)是使用了螺旋流动性大于等于110cm，且粘度小于10Pa·S的树脂的情况。
这里，基于JIS K7210进行熔融粘度测量，作为测量条件将样品量设定为3g、将温度水平设定为175±2℃、将管口尺寸设定为(1.00±0.02)mmφ×10mm。另外所谓螺旋流动性指的是在做成螺旋状的流动测试型模中在一定条件下填充树脂时，树脂所达到的长度。根据该螺旋流动性可评估在喷射成型中的树脂的流动性。
在螺旋流动性的测量中，将在EMMI-1-66中规定的型模和传递模塑机(transfer-molding machine)作为测量装置使用。另外，测量样品从保存仓库取出，保持未开封地在室温下放置两个小时后，开封进行测量。而且，在开封后两个小时以内将试验结束。另外，作为测量条件将样品量设定为约15g，废料(cull)厚度设定为约3mm，喷射压力设定为6.9±0.5MPa，成型时间设定为120±5秒钟，预热设定为无，将温度水平设定为175±2℃。在这些条件下，确认达到了规定的温度水平后，投入样品，然后迅速使活塞降下，并在10秒钟内开始加压。然后，通过在规定时间结束后拆开型模，读取树脂的流动长度(cm)来测量螺旋流动性。
与图5(a)相比，在图5(b)中金丝的流线曲率小。因此，为了防止在密封树脂流过时金丝流动，金丝之间产生电气短路，优选为使用螺旋流动性大于等于110cm，并且粘度小于10Pa·S的树脂。
图6(a)是示出根据本发明实施方式1的半导体装置的另一个例子的截面图。图6(b)是其俯视图。在玻璃环氧布线基板41上层叠安装有芯片42、隔离芯片43、芯片44、芯片45。另外，在芯片44、45的铝焊盘11上形成有凸块电极14。并且，金丝13被球键合在引线46上，并被针脚键合在凸块电极14上。而且，整体被密封树脂47密封，在玻璃环氧布线基板41的底面上形成焊锡球48。
图7(a)是示出根据本发明实施方式1的半导体装置的再一个例子的截面图，图7(b)是其俯视图。裸片焊盘51上搭载有芯片52。而且，在芯片52的中心处设置了一列多个铝焊盘11。该铝焊盘11上形成有凸块电极14。而且，金丝13被球键合在引线53上，且被针脚键合在凸块电极14上。而且，整体通过密封树脂54被密封。
(实施方式2)
图8(a)～(d)是示出根据本发明实施方式2的半导体装置的制造方法的截面图。首先，如图8(a)所示，使从毛细管12排出的金丝13的前端的金球接合在芯片23的铝焊盘11上，形成凸块电极14。但是使用与实施方式1相同的材质的材料作为金丝13。
而且，如图8(b)所示，使毛细管12向上升高15μm。这里，由于凸块电极14的高度是15μm，因此毛细管12退到凸块电极14的上方。在本实施方式中所使用的毛细管12和金丝13的尺寸分别是，毛细管12的内径为30μm，金丝13的直径是23μm。
然后，如图8(c)所示，使毛细管12沿横向方向往复运动。但是，将毛细管12的动作振幅设定为至少大于等于金丝13与毛细管12的内壁之间的间隙。具体而言，因为金丝13的直径是23μm，毛细管12的内径是30μm，所以将两者的间隙进行平均，在一侧为3.5μm，两侧合起来为7μm。作为动作振幅最低必须大于等于毛细管12的内壁和金丝13的一侧的间隙3.5μm。为了对金丝13的尾部切断部分施加充分的应力，使切断强度降低，作为动作振幅优选为大于等于毛细管12内壁和金丝13的两侧之间的间隙的和7μm。于是，例如使毛细管12向一方水平移动了30μm之后，再向反方向水平移动了65μm。由此，可对金丝13的尾部切断部分施加应力，使切断强度降低。另外，随着水平移动的大小，也可以通过水平移动来将金丝13从凸块电极14上切断。
其后，如图8(d)所示，通过用钳子15夹着金丝13向上提拉切断金丝13。此时，由于通过毛细管12的往复运动降低了金丝13的强度，因此可降低切断金丝13时的反作用力，能够比实施方式1更进一步抑制金丝13呈S形弯曲或凸块电极14的剥落。
另外，通过在毛细管12进行往复运动之前将毛细管12退到凸块电极14上方，可防止在往复运动时毛细管12和凸块电极14相接触，从而使凸块电极14受到损伤。
另外，可以使毛细管12沿横向进行圆周运动来代替沿横向进行往复运动，此外只要是在矢量分解的情况下包含横向移动的动作即可。另外，关于振动频率和动作手段并不作特别限定，但是由于超声波振动的振幅一般是小于等于1μm，因此，很难得到充分的振幅作为用于使金丝13的强度降低的毛细管12的动作。在本实施方式中，通过将电动机作为动力源，一边机械地进行位置控制一边使其动作，产生上述毛细管12的水平移动动作。
(实施方式3)
图9(a)～(d)是示出根据本发明实施方式3的半导体装置的制造方法的截面图。首先，如图9(a)所示，使用毛细管12，将金丝13的前端的金球球键合在芯片22的铝焊盘上之后，将金丝13针脚键合在形成于芯片23的铝焊盘11上的凸块电极14上。具体地，利用毛细管12将金丝13按压在凸块电极14上，按压时间为10ms，并使用超声波振动将金丝13破碎并接合到凸块电极14上。但是，使用与实施方式1相同的材质的材料作为金丝13。
其后，如图9(b)所示，使毛细管12在金丝13的循环(loop)的前进方向上退到在其后工序中毛细管12进行横向动作的振幅的一半以上的距离。例如，使毛细管12水平移动30μm。
其后，如图9(c)所示，与实施方式3同样，使毛细管12沿横向往复运动。但是，毛细管12的动作振幅设定为至少大于等于金丝13与毛细管12的内壁之间的间隙。即，作为动作振幅最低限度必须大于等于毛细管12的内壁和金丝13的一侧的间隙3.5μm。另外，为了对金丝13的尾部切断部分施加充分的应力，从而使切断强度降低，作为动作振幅优选为大于等于毛细管12内壁和金丝13的两侧之间的间隙的和7μm。在本实施方式中的动作振幅是40μm。
在其后，如图9(d)所示，通过用钳子15夹住金丝13向上提拉来切断金丝13。此时，由于通过毛细管12的往复运动降低了金丝13的切断强度，因此可降低金丝13被切断时的反作用力，能够比实施方式1更进一步抑制金丝13呈S形弯曲和凸块电极14的剥落。随着往复运动的动作振幅，也可以通过往复运动将金丝13切断。在这种情况下，能够把金丝13被切断时的反作用力造成的金丝呈S形弯曲抑制在最小限度。
另外，由于在毛细管12往复运动之前，使毛细管12离开开始针脚键合的位置，即金丝13接触到凸块电极14的位置大于等于往复运动的振幅一半的距离，因此在毛细管12进行往复运动时，能够减轻对金丝13和凸块电极14之间的接合部分以及金丝13的根部分施加的应力，可防止金丝大幅的强度降低和断线。

Claims (4)

1、一种半导体装置，其特征在于，具有：
带有焊盘的芯片；
在上述焊盘上形成的凸块电极；以及
针脚键合在上述凸块电极上的键合丝，
其中，上述键合丝满足(弹性系数/每单位面积的断裂强度)≥400的条件。
2、如权利要求1所述的半导体装置，其特征在于，还具有：
密封上述芯片、上述凸块电极、以及上述键合丝的密封树脂，
上述密封树脂的螺旋流动性大于等于110cm并且粘度小于10Pa·S。
3、一种半导体装置的制造方法，其特征在于，具有：
使用通过毛细管的键合丝在焊盘上形成凸块电极的工序；
在形成上述凸块电极的工序之后，使上述毛细管以至少大于等于上述键合丝和上述毛细管的内壁之间的间隙的振幅沿着横向方向进行往复运动的工序；以及
在使上述毛细管沿着横向方向进行往复运动的工序之后，通过用钳子夹着上述键合丝向上方向提拉来切断上述键合丝的工序，
其中，作为上述键合丝，采用满足(弹性系数/每单位面积的断裂强度)≥400的条件的键合丝。
4、一种半导体装置的制造方法，其特征在于，具有：
使用毛细管将键合丝针脚键合在凸块电极上的工序；
在上述针脚键合的工序之后，使上述毛细管以至少大于等于上述键合丝和上述毛细管的内壁之间的间隙的振幅沿着横向方向进行往复运动的工序；以及
在使上述毛细管沿着横向方向进行往复运动的工序之后，通过用钳子夹着上述键合丝向上方向提拉来切断上述键合丝的工序，
其中，作为上述键合丝，采用满足(弹性系数/每单位面积的断裂强度)≥400的条件的键合丝。
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