CN100555660C - Wideband gap gallium nitride radical heterojunction field effect transistor structure and manufacture method - Google Patents
Wideband gap gallium nitride radical heterojunction field effect transistor structure and manufacture method Download PDFInfo
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- CN100555660C CN100555660C CNB2006101279205A CN200610127920A CN100555660C CN 100555660 C CN100555660 C CN 100555660C CN B2006101279205 A CNB2006101279205 A CN B2006101279205A CN 200610127920 A CN200610127920 A CN 200610127920A CN 100555660 C CN100555660 C CN 100555660C
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Abstract
A kind of wideband gap gallium nitride radical heterojunction field effect transistor structure comprises: a substrate; One high-temperature ammonolysis aluminium nucleating layer, this high-temperature ammonolysis aluminium nucleating layer be produced on substrate above; One aluminium (indium) gallium nitrogen super-lattice buffer layer, this aluminium (indium) gallium nitrogen super-lattice buffer layer be produced on high-temperature ammonolysis aluminium nucleating layer above; One non-have a mind to the doping or the doped gallium nitride resistive formation, this is non-have a mind to mix or the doped gallium nitride resistive formation be produced on aluminium (indium) gallium nitrogen super-lattice buffer layer above; The one non-high mobility gallium nitride layer of having a mind to mix, this is non-have a mind to mix the high mobility gallium nitride layer be produced on non-have a mind to mix or the doped gallium nitride resistive formation above; One aln inserting layer, this aln inserting layer be produced on the non-high mobility gallium nitride layer of having a mind to mix above; One non-have a mind to the doping or n type adulterated al (indium) gallium nitrogen layer, this aluminium (indium) gallium nitrogen layer be produced on aln inserting layer above.
Description
Technical field
The invention belongs to technical field of semiconductors, be meant a kind of gallium nitride radical heterojunction field effect transistor structure that uses superlattice structure resilient coating and high mobility gallium nitride channel layer and preparation method thereof especially, can significantly reduce the lattice defect of material and improve raceway groove two-dimensional electron gas mobility.
Background technology
Gallium nitride is as typical case's representative of third generation wide bandgap semiconductor, have good thermal stability and chemical stability, high-breakdown-voltage, high electronics saturation drift velocity and good radiation resistance, be particularly suitable for preparing have high temperature, the HFET of high frequency, high-power and radiation-resisting performance.Gallium nitride radical heterojunction field effect transistor has broad application prospects in fields such as wireless telecommunications, space flight and aviation, radar, hyperthermia radiation environment, oil exploration, automation control, automotive electronics.
The operation principle of gallium nitride radical heterojunction field effect transistor: owing to form two kinds of material energy gap differences of heterojunction, at gallium nitride and aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) the heterojunction boundary place has formed potential well and potential barrier, because the free electron that polarity effect or modulation doping produce, the gallium nitride layer that is accumulated in non-doping is near in the triangle potential well at interface, form two-dimensional electron gas, owing to make these electronics in the potential well and the ionized impurity apart in the potential barrier, greatly reduce Coulomb scattering, thereby significantly improved the mobility of material.After being developed into device,, under certain Dc bias, can amplify high-frequency microwave signal by the two-dimensional electron gas at gate electrode may command heterojunction boundary place.
High heat conductance carborundum and silicon are to prepare gallium nitrate based high temperature, high frequency and the comparatively desirable backing material of HIGH-POWERED MICROWAVES power device at present.Wherein carborundum has less lattice mismatch with gallium nitride, and thermal conductivity is sapphire 10 times, has higher crystal mass, more excellent heat radiation and device performance than the gallium nitride material and the HFET of other foreign substrate extension.But carborundum is littler than gallium nitride thermal coefficient of expansion, and when silicon carbide substrates and gallium nitride film growth back cool to room temperature, the contraction of gallium nitride film makes gallium nitride film be subjected to tension stress and easy cracking greater than substrate.Therefore, reducing mismatch stress is the problem that growing high-quality epitaxy of gallium nitride structure needs emphasis to solve on silicon carbide substrates.The growth technique of silicon substrate material is the most ripe, low price, crystal mass is good, is fit to major diameter technology, and have preferably high heat conductance and and to be convenient to photoelectricity integrated, represented wide application prospect at civil area.But and have bigger lattice mismatch between the gallium nitride, and extension gallium nitride material defect concentrations in crystals is higher, and quality of materials is relatively poor, need to improve material epitaxy technology and further carry out structural design, improve quality of materials, bring into play its high heat conductance strong point, performance is expected to surpass Sapphire Substrate.
Before the present invention, the structure that the silicon carbide substrates gallium nitride radical heterojunction field effect transistor often adopts is: growing aluminum nitride nucleating layer and the gallium nitride resistive formation that obtains by doping compensation successively on the semi-insulating silicon carbide substrate, regrowth gallium aluminium nitrogen layer.Aln nucleation layer and gallium nitride resilient coating have been alleviated the mismatch stress between substrate and the epitaxial layer of gallium nitride, reduced the defect concentration of epitaxial layer of gallium nitride, but still need further take measures to eliminate the mismatch stress of epitaxial structure and reduce the defect concentration of epitaxial film, thereby avoid the gallium nitride radical heterojunction field effect transistor structure material cracking of silicon carbide substrates extension and improve crystal mass.
Two-dimensional electron gas mobility and concentration are the important parameters that characterizes the heterojunction field effect transistor structure quality of materials, improve simultaneously that two-dimensional electron gas mobility and concentration are to improve the output current density of gallium nitride radical heterojunction field effect transistor and the important measures of power density in the raceway groove.At present,, usually the aluminum gallium nitride barrier layer is carried out the n type and mix, can improve the two-dimensional electron gas in the raceway groove to a certain extent for two-dimensional electron gas and the mobility that improves the gallium nitride radical heterojunction field effect transistor structure material.Can reduce the integrality of material lattice but mix, thereby cause the crystal mass of gallium aluminium nitrogen layer to descend, the interface roughness degree between gallium nitride and the gallium aluminium nitrogen layer increases, so the raising effect of its mobility is unsatisfactory.
Summary of the invention
First purpose of the present invention provides a kind of high heat conductance carborundum and silicon substrate gallium nitride radical heterojunction field effect transistor, has better heat dispersion;
Second purpose of the present invention provides a kind of gallium nitride radical heterojunction field effect transistor, has lower defect concentration and the crystal mass of Geng Gao;
The 3rd purpose of the present invention provides a kind of gallium nitride radical heterojunction field effect transistor, has higher two-dimensional electron gas mobility;
The 4th purpose of the present invention provides a kind of gallium nitride radical heterojunction field effect transistor, can more effectively limit channel electrons to resilient coating, barrier layer and surface leakage;
The 5th purpose of the present invention provides the method for using the super-lattice buffer layer structure to eliminate the epitaxial layer of gallium nitride mismatch stress and significantly reduce lattice defect;
The 6th purpose of the present invention provides the method for using high mobility gallium nitride thin layer to improve gallium nitride channel layer and aluminium (indium) gallium nitrogen barrier layer interface quality;
The 7th purpose of the present invention provides a kind of gallium nitride radical heterojunction field effect transistor and manufacture method, has the advantage that technology is reasonable, rate of finished products is high.
The present invention adopts the unique compound buffer layer structure that designs through optimum organization (to comprise high-temperature ammonolysis aluminium nucleating layer, aluminium (indium) gallium nitrogen super-lattice buffer layer and high resistant gallium nitride resilient coating), adopt novel high mobility gallium nitride thin layer as channel layer, this layer is positioned between high resistant gallium nitride resilient coating and aluminium (indium) the gallium nitrogen, and between high mobility gallium nitride channel layer and aluminium (indium) gallium nitrogen barrier layer, introduce the skim aln inserting layer, by accurate control growing condition, as temperature, pressure, the V/III ratio, effectively alleviated the stress that lattice mismatch and thermal expansion mismatch are brought, reduced the defect concentration of epitaxial layer of gallium nitride, improve the crystal mass of channel layer, grown the gallium nitride radical heterojunction field effect transistor structure material.
This buffer layer structure can effectively reduce the mismatch stress between epitaxy of gallium nitride structure and carborundum or the silicon substrate, reduces the epitaxial structure defect concentration and limit channel electrons to leak to the substrate direction.Effect of aluminium (indium) gallium nitrogen super-lattice buffer layer is significantly to reduce the lattice defect that thermal expansion mismatch and lattice mismatch from substrate cause, and improves the epitaxial structure crystal mass; Another effect of aluminium (indium) gallium nitrogen super-lattice buffer layer is the direction of propagation that can change from the crystal defects such as threading dislocation of substrate and aln nucleation layer, stops it to the extension structural extended.High mobility gallium nitride channel layer has significantly improved raceway groove two-dimensional electron gas mobility for two-dimensional electron gas provides a good passage.An effect of aln inserting layer is to utilize binary compound that channel electrons and multi-element compounds aluminium (indium) gallium nitrogen barrier layer are separated, and has reduced electron scattering, has further improved raceway groove two-dimensional electron gas mobility; Another effect of aln inserting layer is to utilize the characteristics of its energy gap greater than gallium nitride, has effectively limited the leakage of electronics to aluminium (indium) gallium nitrogen barrier layer and surface.
The present invention can obtain lower and higher silicon carbide substrates and the silicon substrate gallium nitride radical heterojunction field effect transistor structure material of mobility of defect concentration, has improved the evenness of the crystal mass and the sample surfaces of material simultaneously; This material structure has better heat dispersion, and can more effectively limit channel electrons to resilient coating, barrier layer and surface leakage.
A kind of wideband gap gallium nitride radical heterojunction field effect transistor structure of the present invention is characterized in that, comprising:
One substrate;
One high-temperature ammonolysis aluminium nucleating layer, this high-temperature ammonolysis aluminium nucleating layer be produced on substrate above;
One Al
xIn
yGa
zThe N super-lattice buffer layer, this Al
xIn
yGa
zThe N super-lattice buffer layer be produced on high-temperature ammonolysis aluminium nucleating layer above;
One non-the doping intentionally or the doped gallium nitride resistive formation, this non-doping intentionally or doped gallium nitride resistive formation are produced on Al
xIn
yGa
zAbove the N super-lattice buffer layer;
The one non-high mobility gallium nitride layer of having a mind to mix, this is non-have a mind to mix the high mobility gallium nitride layer be produced on non-have a mind to mix or the doped gallium nitride resistive formation above;
One aln inserting layer, this aln inserting layer be produced on the non-high mobility gallium nitride layer of having a mind to mix above;
One non-the doping intentionally or n type doped with Al
xIn
yGa
zThe N layer, this Al
xIn
yGa
zThe N layer be produced on aln inserting layer above.
Wherein said substrate adopts high heat conductance carborundum and silicon substrate, particularly less with the gallium nitride lattice mismatch silicon carbide substrates or semi-insulating or conduction 4H silicon carbide substrates or semi-insulating or conduction 6H silicon carbide substrates; Also can adopt the substrate of other suitable gallium nitride radical heterojunction field effect transistor material epitaxies such as sapphire.
Wherein the thickness of high-temperature ammonolysis aluminium nucleating layer is 0.01-0.50 μ m, and preferred value is 0.03-0.30 μ m.
Al wherein
xIn
yGa
zThe cycle of N super-lattice buffer layer, monolayer growth thickness was 1-50nm between 2-50, and preferred value is 2-30nm.
Al wherein
xIn
yGa
zThe concrete structure of N super-lattice buffer layer is: the Al that the lattice constant in 2-50 cycle is different
xIn
yGa
zThe alternating layer of N super-lattice buffer layer, this Al
xIn
yGa
zX+y+z=1 in the alternating layer of N super-lattice buffer layer, 0≤x≤1,0≤y≤1,0≤z≤1.
Aluminium Al wherein
xIn
yGa
zThe N super-lattice buffer layer comprises aluminium nitride/aluminum gallium nitride superlattice structure, and the cycle, aluminium nitride monolayer growth thickness was 1-50nm between 2-50, and preferred value is 2-30nm; Aluminum gallium nitride monolayer growth thickness is 1-50nm, and preferred value is 2-30nm.
Wherein non-thickness of having a mind to doping or doped gallium nitride resistive formation is 1-5 μ m.
The room temperature resistivity of wherein non-doping intentionally or doped gallium nitride resistive formation is greater than 1 * 10
6Ω .cm, preferred value is greater than 1 * 10
8Ω .cm.
The thickness of the wherein non-high mobility gallium nitride layer of having a mind to mix is 0.03-0.5 μ m.
The room temperature mobility of the wherein non-high mobility gallium nitride layer of having a mind to mix is greater than 500cm
2/ Vs, preferred value is greater than 700cm
2/ Vs.
Wherein the thickness of aln inserting layer is 0.8-3nm.
Al wherein
xIn
yGa
zThe N layer is non-that have a mind to mix or the doping of n type, and thickness is 10-50nm, this Al
xIn
yGa
zX+y+z=1 in the N super-lattice buffer layer, 0＜x≤1,0≤y＜1,0≤z＜1.
Al wherein
xIn
yGa
zThe N super-lattice buffer layer comprises non-aluminum gallium nitride structure doping or that the n type mixes of having a mind to, and the thickness in this aluminum gallium nitride structure is 10-50nm, and the preferred value scope is 15-35nm, and al composition is between 0.05-0.5.
Wherein, at Al
xIn
yGa
zAll right regrowth gallium nitride or aluminum gallium nitride block layer above the N layer, this layer is non-have a mind to doping, n type or p type, thickness is 1-20nm.
The manufacture method of a kind of wideband gap gallium nitride radical heterojunction field effect transistor structure of the present invention is characterized in that, comprises the steps:
Step 1: select a substrate;
Step 2: growth one deck high-temperature ammonolysis aluminium nucleating layer on substrate, growth thickness is 0.01-0.50 μ m, preferred value is 0.03-0.30 μ m;
Step 3: Al grows on high-temperature ammonolysis aluminium nucleating layer
xIn
yGa
zThe N super-lattice buffer layer, the cycle, monolayer growth thickness was 1-50nm between 2-50, preferred value is 2-30nm;
Step 4: change underlayer temperature, growth is non-on aluminium (indium) gallium nitrogen super-lattice buffer layer has a mind to mix or the doped gallium nitride resistive formation, and growth thickness is 1-5 μ m;
Step 5: change growth conditions, the non-high mobility gallium nitride layer of having a mind to mix of growth on non-doping intentionally or doped gallium nitride resistive formation, growth thickness is 0.03-0.5 μ m;
Step 6: change substrate temperature, growing aluminum nitride insert layer on the non-high mobility gallium nitride layer of having a mind to mix, growth thickness is 0.8-3nm;
Step 7: Al at last grows on aln inserting layer
xIn
yGa
zN resilient coating, growth thickness are 10-50nm.
Wherein said substrate preferentially adopts high heat conductance carborundum and silicon substrate, particularly less with the gallium nitride lattice mismatch silicon carbide substrates or semi-insulating or conduction 4H silicon carbide substrates or semi-insulating or conduction 6H silicon carbide substrates; Also can adopt the substrate of other suitable gallium nitride radical heterojunction field effect transistor material epitaxies such as sapphire.
Wherein at Al
xIn
yGa
zGrowing gallium nitride or aluminum gallium nitride block layer above the N resilient coating, thickness is 1-20nm.
Wherein this method is to adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxy and vapor phase epitaxy technique.
The growth temperature of wherein said high-temperature ammonolysis aluminium nucleating layer is 800-1200 ℃, and growth pressure is 5.33-26.67kPa, and growth thickness is 0.01-0.50 μ m, and preferred value is 0.03-0.30 μ m.
Wherein said Al
xIn
yGa
zThe growth temperature of N super-lattice buffer layer is between 800-1200 ℃, and growth pressure is 5.33-26.67kPa; Al
xIn
yGa
zThe cycle of N super-lattice buffer layer, monolayer growth thickness was 1-50nm between 2-50, and preferred value is 2-30nm.
Wherein said Al
xIn
yGa
zThe growth rate of N super-lattice buffer layer is 0.1-0.8 μ m/h.
Wherein said Al
xIn
yGa
zThe N super-lattice buffer layer comprises aluminium nitride/aluminum gallium nitride superlattice structure, and growth temperature is between 800-1200 ℃, and growth pressure is 5.33-26.67kPa, and growth rate is 0.1-0.8 μ m/h; The cycle of aluminium nitride/aluminum gallium nitride superlattice, aluminium nitride monolayer growth thickness was 1-50nm between 2-50, and preferred value is 2-30nm; Aluminum gallium nitride monolayer growth thickness is 1-50nm, and preferred value is 2-30nm.
Wherein said non-growth temperature of having a mind to doping or doped gallium nitride resistive formation is 900-1100 ℃, and the preferred value scope is 1020-1100 ℃, and growth pressure is 5.33-26.67kPa, and growth thickness is 1-5 μ m.
Wherein said non-growth rate of having a mind to doping or doped gallium nitride resistive formation is 3-5 μ m/h.
The room temperature resistivity of wherein said non-doping intentionally or doped gallium nitride resistive formation is greater than 1 * 10
6Ω .cm, preferred value is greater than 1 * 10
8Ω .cm.
The growth temperature of the wherein said non-high mobility gallium nitride layer of having a mind to mix is at 900-1100 ℃, and growth pressure is 40.00-80.00kPa, and growth thickness is 0.03-0.5 μ m.
The wherein said non-high mobility gallium nitride layer growth rate of having a mind to mix is 2-3 μ m/h.
The room temperature mobility of the wherein said non-high mobility gallium nitride layer of having a mind to mix is greater than 500cm
2/ Vs, preferred value is greater than 700cm
2/ Vs.
The growth temperature of wherein said aln inserting layer is between 850-1150 ℃, and growth pressure is 5.33-26.67kPa, and growth thickness is 0.8-3nm.
Wherein said aluminium (indium) gallium nitrogen layer is non-that have a mind to mix or the doping of n type, and growth temperature is between 850-1150 ℃, and growth pressure is 5.33-26.67kPa, and growth thickness is 10-50nm.
Wherein said Al
xIn
yGa
zThe N layer comprises non-aluminum gallium nitride structure doping or that the n type mixes of having a mind to, and growth temperature is between 850-1150 ℃, and growth pressure is 5.33-26.67kPa, and growth thickness is 10-50nm, and the preferred value scope is 15-35nm, and al composition is between 0.05-0.5.
Wherein at Al
xIn
yGa
zCan the regrowth gallium nitride above the N layer or aluminum gallium nitride block layer, this layer be non-doping, n type or p type intentionally, and growth temperature is between 850-1150 ℃, and growth pressure is 5.33-40.00kPa, and thickness is 1-20nm.
Description of drawings
For further specifying content of the present invention, below in conjunction with embodiment the present invention is done a detailed description, wherein:
Fig. 1 is the structural representation of gallium nitride radical heterojunction field effect transistor of the present invention;
Fig. 2 is the preferable enforcement structural representation of gallium nitride radical heterojunction field effect transistor of the present invention;
Fig. 3 is another preferable enforcement structural representation of gallium nitride radical heterojunction field effect transistor of the present invention;
Fig. 4 is the X ray double crystal diffraction analytical test result of silicon carbide substrates gallium nitride radical heterojunction field effect transistor structure of the present invention;
Table 1 is the concrete growth temperature of each grown layer of gallium nitride radical heterojunction field effect transistor structure of the present invention, growth pressure and growth thickness;
Table 2 is the concrete growth temperature of each grown layer of the preferable enforcement structure of gallium nitride radical heterojunction field effect transistor structure of the present invention, growth pressure and growth thickness;
Table 3 is the two-dimensional electron gas mobility and the two-dimensional electron gas test result of silicon carbide substrates gallium nitride radical heterojunction field effect transistor structure of the present invention.
Embodiment
Key of the present invention is to adopt on the structure the unique compound buffer layer structure that designs through optimum organization (to comprise high-temperature ammonolysis aluminium nucleating layer, aluminium (indium) gallium nitrogen super-lattice buffer layer and high resistant gallium nitride resilient coating), adopt novel high mobility gallium nitride thin layer as channel layer, and between gallium nitride channel layer and aluminium (indium) gallium nitrogen barrier layer, introduce the skim aln inserting layer, by accurate control growing condition, as temperature, pressure, the V/III ratio, effectively alleviated the stress that lattice mismatch and thermal expansion mismatch are brought, reduced the defect concentration of epitaxial layer of gallium nitride, improve the crystal mass of channel layer, grown the gallium nitride radical heterojunction field effect transistor structure material.This buffer layer structure can effectively reduce the mismatch stress between epitaxy of gallium nitride structure and silicon carbide substrates or the silicon substrate, reduces the epitaxial structure defect concentration and limit channel electrons to leak to the substrate direction.High mobility gallium nitride channel layer has significantly improved channel mobility and crystal mass for two-dimensional electron gas provides a good passage.An effect of aln inserting layer is to utilize binary compound that channel electrons and multi-element compounds aluminium (indium) gallium nitrogen barrier layer are separated, and has reduced electron scattering, has further improved raceway groove two-dimensional electron gas mobility; Another effect of aln inserting layer is to utilize the characteristics of its energy gap greater than gallium nitride, has effectively limited the leakage of electronics to aluminium (indium) gallium nitrogen barrier layer and surface.
See also shown in Figure 1ly, the structure of a kind of gallium nitride radical heterojunction field effect transistor of the present invention is characterized in that, comprising:
One substrate 10, these substrate 10 materials preferentially adopt high heat conductance carborundum and silicon substrate, particularly less with gallium nitride lattice mismatch silicon carbide substrates;
One high-temperature ammonolysis aluminium nucleating layer 20, this floor height temperature aln nucleation layer 20 be produced on substrate 10 above, thickness is 0.01-0.50 μ m, preferred value is 0.03-0.30 μ m;
One aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) super-lattice buffer layer 30, this nitrogen aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) 30 be produced on high-temperature ammonolysis aluminium nucleating layer 20 above, aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) monolayer growth thickness is 1-50nm between 2-50 the cycle of superlattice, and preferred value is 2-30nm.
This aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) concrete structure of super-lattice buffer layer is: the aluminium that the lattice constant in 2-50 cycle is different (indium) gallium nitrogen (Al
xIn
yGa
zN) alternating layer, x+y+z=1 wherein, 0≤x≤1,0≤y≤1,0≤z≤1.
This aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) super-lattice buffer layer comprises aluminium nitride/aluminum gallium nitride (Al
xGa
1-xN, 0≤x＜1) superlattice structure, this structure is a preferable enforcement superlattice structure, and the cycle, aluminium nitride monolayer growth thickness was 1-50nm between 2-50, and preferred value is 2-30nm; Aluminum gallium nitride monolayer growth thickness is 1-50nm, and preferred value is 2-30nm.
This aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) super-lattice buffer layer comprises aluminium nitride/gallium nitride (Al
xGa
1-xN, x=0) superlattice structure, this structure is another preferable enforcement superlattice structure, and the cycle, aluminium nitride monolayer growth thickness was 1-50nm between 2-50, and preferred value is 2-30nm; Gallium nitride monolayer growth thickness is 1-50nm, and preferred value is 2-30nm.
One non-the doping intentionally or doped gallium nitride resistive formation 40, this non-doping intentionally or doped gallium nitride resistive formation 40 are produced on aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) super-lattice buffer layer 30 above, thickness is 1-5 μ m;
The room temperature resistivity of this non-doping intentionally or doped gallium nitride resistive formation is greater than 1 * 10
6Ω .cm, preferred value is greater than 1 * 10
8Ω .cm.
The one non-high mobility gallium nitride layer 50 of having a mind to mix, this is non-have a mind to mix high mobility gallium nitride layer 50 be produced on non-have a mind to mix or doped gallium nitride resistive formation 40 above, thickness is 0.03-0.5 μ m;
This is non-has a mind to mix the room temperature mobility of high mobility gallium nitride layer greater than 500cm
2/ Vs, preferred value is greater than 700cm
2/ Vs.
One aln inserting layer 60, this aln inserting layer 60 be produced on the non-high mobility gallium nitride layer 50 of having a mind to mix above, thickness is 0.8-3nm;
One non-the doping intentionally or n type adulterated al (indium) gallium nitrogen (Al
xIn
yGa
zN) layer 70, this aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) layer 70 be produced on aln inserting layer 60 above, thickness is 10-50nm, x+y+z=1 wherein, 0＜x≤1,0≤y＜1,0≤z＜1.
This aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) layer one preferable enforcement structure is the non-aluminum gallium nitride structure (y=0) doping or that the n type mixes of having a mind to, and thickness is 10-50nm, and the preferred value scope is 15-35nm, and al composition is between 0.05-0.5.
All right regrowth gallium nitride or aluminum gallium nitride block layer on aluminium (indium) gallium nitrogen layer, this layer can be non-have a mind to doping, n type or p type, thickness is 1-20nm.
Please consult shown in Figure 1ly again, the manufacture method of a kind of gallium nitride radical heterojunction field effect transistor of the present invention comprises the steps:
Selection-substrate 10, the material of this substrate 10 preferentially adopts high heat conductance carborundum and silicon substrate, particularly less with gallium nitride lattice mismatch silicon carbide substrates, wherein silicon carbide substrates is including, but not limited to semi-insulating or conduction 4H silicon carbide substrates or semi-insulating or conduction 6H silicon carbide substrates.
At first adopt the metal-organic chemical vapor deposition equipment method, growth one deck high-temperature ammonolysis aluminium nucleating layer 20 on substrate at first, the growth temperature of this high-temperature ammonolysis aluminium nucleating layer 20 is 800-1200 ℃, growth pressure is 5.33-26.67kPa (40-200torr), growth thickness is 0.01-0.50 μ m, and preferred value is 0.03-0.30 μ m;
Aluminium (indium) the gallium nitrogen super-lattice buffer layer 30 of on high-temperature ammonolysis aluminium nucleating layer 20, growing then, the growth temperature of this aluminium (indium) gallium nitrogen super-lattice buffer layer 30 is between 800-1200 ℃, and growth pressure is 5.33-26.67kPa (40-200torr); The cycle of aluminium (indium) gallium nitrogen superlattice, monolayer growth thickness was 1-50nm between 2-50, and preferred value is 2-30nm;
The growth rate of this aluminium (indium) gallium nitrogen super-lattice buffer layer is 0.1-0.8 μ m/h.
This aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) super-lattice buffer layer one preferable enforcement structure is aluminium nitride/aluminum gallium nitride (Al
xGa
1-xN, 0≤x＜1) superlattice structure, growth temperature is between 800-1200 ℃, and growth pressure is 5.33-26.67kPa (40-200torr), and growth rate is 0.1-0.8 μ m/h; Aluminium nitride/aluminum gallium nitride (Al
xGa
1-xN, 0≤x＜1) aluminium nitride monolayer growth thickness is 1-50nm between 2-50 the cycle of superlattice, and preferred value is 2-30nm; Aluminum gallium nitride monolayer growth thickness is 1-50nm, and preferred value is 2-30nm.
This aluminium (indium) gallium nitrogen (Al
xIn
yGa
zN) another preferable enforcement structure of super-lattice buffer layer is aluminium nitride/gallium nitride (Al
xIn
yGa
zN, x=0, y=0) superlattice structure, growth temperature is between 800-1200 ℃, and growth pressure is 5.33-26.67kPa (40-200torr), and growth rate is 0.1-0.8 μ m/h aluminium nitride/gallium nitride (Al
xGa
1-xN, x=0, y=0) aluminium nitride monolayer growth thickness is 1-50nm between 2-50 the cycle of superlattice, preferred value is 2-30nm; Gallium nitride monolayer growth thickness is 1-50nm, and preferred value is 2-30nm.
Change underlayer temperature, at aluminium nitride/aluminum gallium nitride (Al
xGa
1-xN, 0≤x＜1) growth is non-on the super-lattice buffer layer 30 has a mind to mix or doped gallium nitride resistive formation 40, the growth temperature of non-doping intentionally or doped gallium nitride resistive formation is between 900-1100 ℃, the preferred value scope is 1020-1100 ℃, growth pressure is 5.33-26.67kPa (40-200torr), and growth thickness is 1-5 μ m;
This non-growth rate of having a mind to doping or doped gallium nitride resistive formation is 3-5 μ m/h.
The room temperature resistivity of this non-doping intentionally or doped gallium nitride resistive formation is greater than 1 * 10
6Ω .cm, preferred value is greater than 1 * 10
8Ω .cm.
This non-doping intentionally or a kind of preferable high resistant generation type of doped gallium nitride resistive formation are involuntary doping high resistant gallium nitride layer, this layer is introduced lattice defect by growth conditionss such as comprehensive and accurate control growing temperature, growth pressure, III-V ratio, growth rate, carrier gas kind and flows, thereby forms the high resistant epitaxial layer of gallium nitride.
Change growth conditions, the non-high mobility gallium nitride layer 50 of having a mind to mix of growth on non-doping intentionally or doped gallium nitride resistive formation 40, this is non-has a mind to mix the growth temperature of high mobility gallium nitride layer between 900-1100 ℃, growth pressure is 40.00-80.00kPa (300-600torr), and growth thickness is 0.03-0.5 μ m;
This non-high mobility gallium nitride layer growth rate of having a mind to mix is 2-3 μ m/h.
This is non-has a mind to mix the room temperature mobility of high mobility gallium nitride layer greater than 500cm
2/ Vs, preferred value is greater than 700cm
2/ Vs.
This non-high mobility gallium nitride layer high mobility of having a mind to mix realizes that wait by comprehensive regulation growth temperature, growth pressure, III-V ratio, growth rate, carrier gas kind and flow and realize, wherein the growth pressure adjusting is a very important factor.
Change underlayer temperature, growing aluminum nitride insert layer 60 on the non-high mobility gallium nitride layer 50 of having a mind to mix, the growth temperature of this aln inserting layer is between 850-1150 ℃, and growth pressure is 5.33-26.67kPa (40-200torr), and growth thickness is 0.8-3nm;
Aluminium (indium) the gallium nitrogen layer 70 of growing at last, this aluminium (indium) gallium nitrogen layer are that non-that have a mind to mix or n type mixes, and growth temperature is between 850-1150 ℃, and growth pressure is 5.33-26.67kPa (40-200torr), and growth thickness is 10-50nm.
This aluminium (indium) gallium nitrogen layer is aluminium (indium) gallium nitrogen (Al wherein
xIn
yGa
zN) layer comprises the non-aluminum gallium nitride structure (y=0) doping or that the n type mixes of having a mind to, this structure is a preferable enforcement structure, growth temperature is between 850-1150 ℃, growth pressure is 5.33-26.67kPa (40-200torr), growth thickness is 10-50nm, the preferred value scope is 15-35nm, and al composition is between 0.05-0.5.
All right regrowth gallium nitride or aluminum gallium nitride block layer on aluminium (indium) gallium nitrogen layer, this layer can be non-have a mind to doping, n type or p type, and growth temperature is between 850-1150 ℃, and growth pressure is 5.33-40.00kPa (40-300torr), and thickness is 1-20nm.
Embodiment
The concrete growth temperature of each grown layer of gallium nitride radical heterojunction field effect transistor structure of the present invention, growth pressure and growth thickness are as shown in table 1:
Table 1
Fig. 2 and two preferred embodiment of HEMT that Figure 3 shows that the formation according to the present invention comprise:
One substrate 10 preferentially adopts high heat conductance carborundum and silicon substrate, particularly less silicon carbide substrates with the gallium nitride lattice mismatch, and wherein silicon carbide substrates is including, but not limited to semi-insulating or conduction 4H silicon carbide substrates or semi-insulating or conduction 6H silicon carbide substrates;
One high-temperature ammonolysis aluminium nucleating layer 20, this floor height temperature aln nucleation layer 20 be produced on silicon carbide substrates 10 above
One aluminium nitride/aluminum gallium nitride superlattice layer or aluminium nitride/gallium nitride superlattice layer 30, this layer be produced on high-temperature ammonolysis aluminium nucleating layer 20 above;
One non-have a mind to the doping or doped gallium nitride resistive formation 40, this is non-have a mind to mix or doped gallium nitride resistive formation 40 be produced on aluminium nitride/aluminum gallium nitride (gallium nitride) superlattice layer 30 ' above;
The one non-high mobility gallium nitride layer 50 of having a mind to mix, this is non-have a mind to mix high mobility gallium nitride layer 50 be produced on non-have a mind to mix or doped gallium nitride resistive formation 40 above;
One aln inserting layer 60, this aln inserting layer 60 be produced on the non-high mobility gallium nitride layer 50 of having a mind to mix above;
One non-have a mind to the doping or n type doping gallium aluminium nitrogen layer 70, this gallium aluminium nitrogen layer 70 be produced on aln inserting layer 60 above.
The concrete growth temperature of each grown layer of Fig. 2 and specific embodiment shown in Figure 3, growth pressure and growth thickness are as shown in table 2, and Fig. 2 and specific embodiment shown in Figure 3 more detailed structure and preparation method are seen explanation with reference to Fig. 1.
Table 2
The sample that specific embodiment method shown in Figure 3 is obtained carries out test analysis, sample substrate is semi-insulating 6H silicon carbide substrates, high resistant gallium nitride resilient coating 30 " and aluminum gallium nitride barrier layer 70 be non-have a mind to mix, the test result proof has very high crystal mass and two-dimensional electron gas mobility with the gallium nitride radical heterojunction field effect transistor material that the method growth obtains.This material of X ray double crystal diffraction analytical proof and interface perfect crystalline thereof, crystal mass height, Fig. 4 show GaN (0002), SiC (0006) and AlN (0002) diffraction peak intensity height, and peak position is clear, and aluminium nitride/gallium nitride (Al
xGa
1-xN, x=0) the superlattice satellites is clear, precipitous.Alternating temperature ear test result suddenly proves that the room temperature two-dimensional electron gas mobility of this material reaches 2042cm
2/ V.s, two-dimensional electron gas are 1.072 * 10
13/ cm
2, the two-dimensional electron gas mobility is respectively 11535cm when 80K and 500K
2/ V.s and 715cm
2/ V.s (table 3).
Table 3
| Project | Room temperature | 80K | 500K |
| Two-dimensional electron gas mobility (cm 2/V.s) | 2042 | 11535 | 715 |
| Two-dimensional electron gas (10 13/cm 2) | 1.072 | 1.023 | 0.927 |
The present invention has reduced technology difficulty, has reduced processing step, has obtained to have more fabricating low-defect-density and more the gallium nitride radical heterojunction field effect transistor structure material of high mobility, has improved the evenness of the crystal mass and the sample surfaces of material simultaneously; This material structure has better heat dispersion, and can more effectively limit channel electrons to resilient coating, barrier layer and surface leakage.Therefore, the present invention can significantly improve the performance of gallium nitrate based high temperature, high frequency, high power device and circuit.
Claims (28)
1. a wideband gap gallium nitride radical heterojunction field effect transistor structure is characterized in that, comprising:
One substrate;
One growth temperature is 800-1200 ℃ a high-temperature ammonolysis aluminium nucleating layer, this high-temperature ammonolysis aluminium nucleating layer be produced on substrate above;
One Al
xIn
yGa
zThe N super-lattice buffer layer, this Al
xIn
yGa
zThe N super-lattice buffer layer be produced on high-temperature ammonolysis aluminium nucleating layer above;
One room temperature resistivity is greater than 1 * 10
6The non-of Ω .cm has a mind to mix or the doped gallium nitride resistive formation, and this non-doping intentionally or doped gallium nitride resistive formation are produced on Al
xIn
yGa
zAbove the N super-lattice buffer layer;
One room temperature mobility is greater than 500cm
2The non-high mobility gallium nitride layer of having a mind to mix of/Vs, this is non-have a mind to mix the high mobility gallium nitride layer be produced on non-have a mind to mix or the doped gallium nitride resistive formation above;
One aln inserting layer, this aln inserting layer be produced on the non-high mobility gallium nitride layer of having a mind to mix above;
One non-the doping intentionally or n type doped with Al
xIn
yGa
zThe N layer, this Al
xIn
yGa
zThe N layer be produced on aln inserting layer above.
2. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 1, it is characterized in that, wherein said substrate adopts high heat conductance carborundum and silicon substrate, silicon carbide substrates or semi-insulating or conduction 4H silicon carbide substrates or the semi-insulating or conduction 6H silicon carbide substrates less with the gallium nitride lattice mismatch; Or employing Sapphire Substrate.
3. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 1 is characterized in that, wherein the thickness of high-temperature ammonolysis aluminium nucleating layer is 0.01-0.50 μ m.
4. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 1 is characterized in that, wherein Al
xIn
yGa
zThe cycle of N super-lattice buffer layer, monolayer growth thickness was 1-50nm between 2-50.
5. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 4 is characterized in that, wherein Al
xIn
yGa
zThe concrete structure of N super-lattice buffer layer is: the Al that the lattice constant in 2-50 cycle is different
xIn
yGa
zThe alternating layer of N super-lattice buffer layer, this Al
xIn
yGa
zX+y+z=1 in the alternating layer of N super-lattice buffer layer, 0≤x≤1,0≤y≤1,0≤z≤1.
6. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 4 is characterized in that, wherein Al
xIn
yGa
zThe N super-lattice buffer layer comprises aluminium nitride/aluminum gallium nitride superlattice structure, and the cycle, aluminium nitride monolayer growth thickness was 1-50nm between 2-50; Aluminum gallium nitride monolayer growth thickness is 1-50nm.
7. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 1 is characterized in that, wherein non-thickness of having a mind to doping or doped gallium nitride resistive formation is 1-5 μ m.
8. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 1 is characterized in that, the thickness of the wherein non-high mobility gallium nitride layer of having a mind to mix is 0.03-0.5 μ m.
9. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 1 is characterized in that, wherein the thickness of aln inserting layer is 0.8-3nm.
10. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 1 is characterized in that, wherein Al
xIn
yGa
zThe N layer is non-that have a mind to mix or the doping of n type, and thickness is 10-50nm, the x+y+z=1 in this AlxInyGazN super-lattice buffer layer, 0＜x≤1,0≤y＜1,0≤z＜1.
11. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 10 is characterized in that, wherein Al
xIn
yGa
zThe N super-lattice buffer layer comprises non-aluminum gallium nitride structure doping or that the n type mixes of having a mind to, and the thickness in this aluminum gallium nitride structure is 10-50nm, and al composition X is between 0.05-0.5.
12. wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 1 is characterized in that, wherein, and at Al
xIn
yGa
zRegrowth gallium nitride or aluminum gallium nitride block layer above the N layer, this gallium nitride or aluminum gallium nitride block layer be non-have a mind to doping, n type or p type, thickness is 1-20nm.
13. the manufacture method of a wideband gap gallium nitride radical heterojunction field effect transistor structure is characterized in that, comprises the steps:
Step 1: select a substrate;
Step 2: growth one layer growth temperature is 800-1200 ℃ a high-temperature ammonolysis aluminium nucleating layer on substrate, and growth thickness is 0.01-0.50 μ m;
Step 3: Al grows on high-temperature ammonolysis aluminium nucleating layer
xIn
yGa
zThe N super-lattice buffer layer, the cycle, monolayer growth thickness was 1-50nm between 2-50;
Step 4: change underlayer temperature, at Al
xIn
yGa
zThe growth room temperature resistivity is greater than 1 * 10 on the N super-lattice buffer layer
6The non-of Ω .cm has a mind to mix or the doped gallium nitride resistive formation, and growth thickness is 1-5 μ m;
Step 5: change growth conditions, have a mind to grow the room temperature mobility greater than 500cm on doping or the doped gallium nitride resistive formation non-
2The non-high mobility gallium nitride layer of having a mind to mix of/Vs, growth thickness is 0.03-0.5 μ m;
Step 6: change substrate temperature, growing aluminum nitride insert layer on the non-high mobility gallium nitride layer of having a mind to mix, growth thickness is 0.8-3nm;
Step 7: Al at last grows on aln inserting layer
xIn
yGa
zN resilient coating, growth thickness are 10-50nm.
14. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13, it is characterized in that, wherein said substrate preferentially adopts high heat conductance carborundum and silicon substrate, silicon carbide substrates or semi-insulating or conduction 4H silicon carbide substrates or the semi-insulating or conduction 6H silicon carbide substrates less with the gallium nitride lattice mismatch; Or employing Sapphire Substrate.
15. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13 is characterized in that, wherein at Al
xIn
yGa
zGrowing gallium nitride or aluminum gallium nitride block layer above the N resilient coating, thickness is 1-20nm.
16. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13 is characterized in that, wherein this method is to adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxy.
17. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13 is characterized in that, the growth pressure of wherein said high-temperature ammonolysis aluminium nucleating layer is 5.33-26.67kPa, and growth thickness is 0.01-0.50 μ m.
18. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13 is characterized in that, wherein said Al
xIn
yGa
zThe growth temperature of N super-lattice buffer layer is between 800-1200 ℃, and growth pressure is 5.33-26.67kPa; Al
xIn
yGa
zThe cycle of N super-lattice buffer layer, monolayer growth thickness was 1-50nm between 2-50.
19. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 18 is characterized in that, wherein said Al
xIn
yGa
zThe growth rate of N super-lattice buffer layer is 0.1-0.8 μ m/h.
20. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 18 is characterized in that, wherein said Al
xIn
yGa
zThe N super-lattice buffer layer comprises aluminium nitride/aluminum gallium nitride superlattice structure, and growth pressure is 5.33-26.67kPa, and growth rate is 0.1-0.8 μ m/h; The cycle of aluminium nitride/aluminum gallium nitride superlattice, aluminium nitride monolayer growth thickness was 1-50nm between 2-50; Aluminum gallium nitride monolayer growth thickness is 1-50nm.
21. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13, it is characterized in that, wherein said non-growth temperature of having a mind to doping or doped gallium nitride resistive formation is 900-1100 ℃, growth pressure is 5.33-26.67kPa, and growth thickness is 1-5 μ m.
22. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 21 is characterized in that, wherein said non-growth rate of having a mind to doping or doped gallium nitride resistive formation is 3-5 μ m/h.
23. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13, it is characterized in that, the growth temperature of the wherein said non-high mobility gallium nitride layer of having a mind to mix is at 900-1100 ℃, growth pressure is 40.00-80.00kPa, and growth thickness is 0.03-0.5 μ m.
24. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 23 is characterized in that, the wherein said non-high mobility gallium nitride layer growth rate of having a mind to mix is 2-3 μ m/h.
25. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13, it is characterized in that, the growth temperature of wherein said aln inserting layer is between 850-1150 ℃, and growth pressure is 5.33-26.67kPa, and growth thickness is 0.8-3nm.
26. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13 is characterized in that, wherein said Al
xIn
yGa
zThe N layer is non-that have a mind to mix or the doping of n type, and growth temperature is between 850-1150 ℃, and growth pressure is 5.33-26.67kPa, and growth thickness is 10-50nm.
27. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13 is characterized in that, wherein said Al
xIn
yGa
zThe N layer comprises non-aluminum gallium nitride structure doping or that the n type mixes of having a mind to, and growth temperature is between 850-1150 ℃, and growth pressure is 5.33-26.67kPa, and growth thickness is 10-50nm, and al composition X is between 0.05-0.5.
28. the manufacture method of wideband gap gallium nitride radical heterojunction field effect transistor structure according to claim 13 is characterized in that, wherein at Al
xIn
yGa
zRegrowth gallium nitride or aluminum gallium nitride block layer above the N layer, this layer is non-have a mind to doping, n type or p type, and growth temperature is between 850-1150 ℃, and growth pressure is 5.33-40.00kPa, and thickness is 1-20nm.
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