CN100549243C - 一种在蓝宝石衬底材料上外延生长AlxGa1-xN单晶薄膜的方法 - Google Patents
一种在蓝宝石衬底材料上外延生长AlxGa1-xN单晶薄膜的方法 Download PDFInfo
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- CN100549243C CN100549243C CNB2006100195452A CN200610019545A CN100549243C CN 100549243 C CN100549243 C CN 100549243C CN B2006100195452 A CNB2006100195452 A CN B2006100195452A CN 200610019545 A CN200610019545 A CN 200610019545A CN 100549243 C CN100549243 C CN 100549243C
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CNB2006100195452A CN100549243C (zh) | 2006-07-05 | 2006-07-05 | 一种在蓝宝石衬底材料上外延生长AlxGa1-xN单晶薄膜的方法 |
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JP2012522388A (ja) | 2009-03-31 | 2012-09-20 | 西安▲電▼子科技大学 | 紫外光発光ダイオード装置及びその製造方法 |
US8318515B2 (en) * | 2009-12-08 | 2012-11-27 | Corning Incorporated | Growth methodology for light emitting semiconductor devices |
CN102412123B (zh) * | 2011-11-07 | 2013-06-19 | 中山市格兰特实业有限公司火炬分公司 | 一种氮化铝的制备方法 |
CN103114332A (zh) * | 2011-11-17 | 2013-05-22 | 北京大学 | 一种通过表面改性自分离制备氮化镓单晶衬底的方法 |
JP2013206976A (ja) * | 2012-03-27 | 2013-10-07 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
CN103849853B (zh) * | 2014-02-21 | 2016-06-08 | 中国科学院半导体研究所 | 缓解mocvd工艺中硅衬底与氮化镓薄膜间应力的方法 |
CN103972382A (zh) * | 2014-04-30 | 2014-08-06 | 电子科技大学 | 一种制造半导体材料的方法 |
CN104392909A (zh) * | 2014-10-14 | 2015-03-04 | 北京大学 | 一种AlN外延薄膜生长方法 |
CN105097451A (zh) * | 2015-07-03 | 2015-11-25 | 安徽工程大学 | 低位错密度AlxGa1-xN外延薄膜的制备方法 |
CN105803523B (zh) * | 2016-03-23 | 2018-07-20 | 北京中科优唯科技有限公司 | 一种半导体材料的外延方法 |
CN108110097A (zh) * | 2018-01-15 | 2018-06-01 | 中国科学院半导体研究所 | GaN基LED器件及其制备方法 |
CN108365069B (zh) * | 2018-02-06 | 2020-06-12 | 华南师范大学 | 一种高亮度v型极化掺杂深紫外led制备方法 |
CN111048403A (zh) * | 2019-12-19 | 2020-04-21 | 马鞍山杰生半导体有限公司 | 一种氮化铝膜及其制备方法和应用 |
CN111509093A (zh) * | 2020-04-24 | 2020-08-07 | 苏州紫灿科技有限公司 | 一种具有渐变插入层的AlN薄膜及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5863811A (en) * | 1995-06-28 | 1999-01-26 | Sony Corporation | Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers |
CN1290958A (zh) * | 1999-06-30 | 2001-04-11 | 丰田合成株式会社 | 第三族氮化物半导体器件和其生产方法 |
CN1365136A (zh) * | 2001-01-12 | 2002-08-21 | 中国科学院半导体研究所 | Ⅲ族氮化物单/多层异质应变薄膜的制作方法 |
CN1468974A (zh) * | 2001-11-17 | 2004-01-21 | 厦门三安电子有限公司 | 一种制作ⅲ族氮化物材料的方法 |
CN1704506A (zh) * | 2004-06-02 | 2005-12-07 | 中国科学院半导体研究所 | 生长高迁移率氮化镓外延膜的方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5863811A (en) * | 1995-06-28 | 1999-01-26 | Sony Corporation | Method for growing single crystal III-V compound semiconductor layers on non single crystal III-V Compound semiconductor buffer layers |
CN1290958A (zh) * | 1999-06-30 | 2001-04-11 | 丰田合成株式会社 | 第三族氮化物半导体器件和其生产方法 |
CN1365136A (zh) * | 2001-01-12 | 2002-08-21 | 中国科学院半导体研究所 | Ⅲ族氮化物单/多层异质应变薄膜的制作方法 |
CN1468974A (zh) * | 2001-11-17 | 2004-01-21 | 厦门三安电子有限公司 | 一种制作ⅲ族氮化物材料的方法 |
CN1704506A (zh) * | 2004-06-02 | 2005-12-07 | 中国科学院半导体研究所 | 生长高迁移率氮化镓外延膜的方法 |
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