CN1900386A - 一种在蓝宝石衬底材料上外延生长AlXGa1-XN单晶薄膜的方法 - Google Patents
一种在蓝宝石衬底材料上外延生长AlXGa1-XN单晶薄膜的方法 Download PDFInfo
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- CN1900386A CN1900386A CN 200610019545 CN200610019545A CN1900386A CN 1900386 A CN1900386 A CN 1900386A CN 200610019545 CN200610019545 CN 200610019545 CN 200610019545 A CN200610019545 A CN 200610019545A CN 1900386 A CN1900386 A CN 1900386A
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- 239000000463 material Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 34
- MUJOIMFVNIBMKC-UHFFFAOYSA-N fludioxonil Chemical compound C=12OC(F)(F)OC2=CC=CC=1C1=CNC=C1C#N MUJOIMFVNIBMKC-UHFFFAOYSA-N 0.000 title claims description 19
- 239000013078 crystal Substances 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 14
- 239000010980 sapphire Substances 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims description 30
- 238000000407 epitaxy Methods 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000012159 carrier gas Substances 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 238000005121 nitriding Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- 229910000077 silane Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract 7
- 230000006911 nucleation Effects 0.000 abstract 2
- 238000010899 nucleation Methods 0.000 abstract 2
- 239000002356 single layer Substances 0.000 abstract 2
- -1 0 <= x <= 1 Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 36
- 150000004767 nitrides Chemical class 0.000 description 7
- 208000037656 Respiratory Sounds Diseases 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
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- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
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CNB2006100195452A CN100549243C (zh) | 2006-07-05 | 2006-07-05 | 一种在蓝宝石衬底材料上外延生长AlxGa1-xN单晶薄膜的方法 |
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CNB2006100195452A CN100549243C (zh) | 2006-07-05 | 2006-07-05 | 一种在蓝宝石衬底材料上外延生长AlxGa1-xN单晶薄膜的方法 |
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CN1900386A true CN1900386A (zh) | 2007-01-24 |
CN100549243C CN100549243C (zh) | 2009-10-14 |
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CNB2006100195452A Active CN100549243C (zh) | 2006-07-05 | 2006-07-05 | 一种在蓝宝石衬底材料上外延生长AlxGa1-xN单晶薄膜的方法 |
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Cited By (14)
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WO2010111854A1 (zh) * | 2009-03-31 | 2010-10-07 | 西安电子科技大学 | 紫外发光二极管器件及其制造方法 |
CN102412123A (zh) * | 2011-11-07 | 2012-04-11 | 中山市格兰特实业有限公司火炬分公司 | 一种氮化铝的制备方法 |
CN102648534A (zh) * | 2009-12-08 | 2012-08-22 | 康宁股份有限公司 | 发光半导体装置的生长方法 |
CN103114332A (zh) * | 2011-11-17 | 2013-05-22 | 北京大学 | 一种通过表面改性自分离制备氮化镓单晶衬底的方法 |
CN103367142A (zh) * | 2012-03-27 | 2013-10-23 | 富士通株式会社 | 化合物半导体器件及其制造方法 |
CN103849853A (zh) * | 2014-02-21 | 2014-06-11 | 中国科学院半导体研究所 | 缓解mocvd工艺中硅衬底与氮化镓薄膜间应力的方法 |
CN103972382A (zh) * | 2014-04-30 | 2014-08-06 | 电子科技大学 | 一种制造半导体材料的方法 |
CN104392909A (zh) * | 2014-10-14 | 2015-03-04 | 北京大学 | 一种AlN外延薄膜生长方法 |
CN105097451A (zh) * | 2015-07-03 | 2015-11-25 | 安徽工程大学 | 低位错密度AlxGa1-xN外延薄膜的制备方法 |
CN105803523A (zh) * | 2016-03-23 | 2016-07-27 | 北京中科优唯科技有限公司 | 一种半导体材料的外延方法 |
CN108110097A (zh) * | 2018-01-15 | 2018-06-01 | 中国科学院半导体研究所 | GaN基LED器件及其制备方法 |
CN108365069A (zh) * | 2018-02-06 | 2018-08-03 | 华南师范大学 | 一种高亮度v型极化掺杂深紫外led制备方法 |
CN111048403A (zh) * | 2019-12-19 | 2020-04-21 | 马鞍山杰生半导体有限公司 | 一种氮化铝膜及其制备方法和应用 |
CN111509093A (zh) * | 2020-04-24 | 2020-08-07 | 苏州紫灿科技有限公司 | 一种具有渐变插入层的AlN薄膜及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3771952B2 (ja) * | 1995-06-28 | 2006-05-10 | ソニー株式会社 | 単結晶iii−v族化合物半導体層の成長方法、発光素子の製造方法およびトランジスタの製造方法 |
KR20010029852A (ko) * | 1999-06-30 | 2001-04-16 | 도다 다다히데 | Ⅲ족 질화물계 화합물 반도체 소자 및 그 제조방법 |
CN1154155C (zh) * | 2001-01-12 | 2004-06-16 | 中国科学院半导体研究所 | Ⅲ族氮化物单/多层异质应变薄膜的制作方法 |
CN1468974A (zh) * | 2001-11-17 | 2004-01-21 | 厦门三安电子有限公司 | 一种制作ⅲ族氮化物材料的方法 |
CN1313655C (zh) * | 2004-06-02 | 2007-05-02 | 中国科学院半导体研究所 | 生长高迁移率氮化镓外延膜的方法 |
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US8525198B2 (en) | 2009-03-31 | 2013-09-03 | Xidian University | Ultraviolet light emitting diode devices and methods for fabricating the same |
WO2010111854A1 (zh) * | 2009-03-31 | 2010-10-07 | 西安电子科技大学 | 紫外发光二极管器件及其制造方法 |
CN102648534A (zh) * | 2009-12-08 | 2012-08-22 | 康宁股份有限公司 | 发光半导体装置的生长方法 |
CN102412123A (zh) * | 2011-11-07 | 2012-04-11 | 中山市格兰特实业有限公司火炬分公司 | 一种氮化铝的制备方法 |
CN103114332A (zh) * | 2011-11-17 | 2013-05-22 | 北京大学 | 一种通过表面改性自分离制备氮化镓单晶衬底的方法 |
CN103367142A (zh) * | 2012-03-27 | 2013-10-23 | 富士通株式会社 | 化合物半导体器件及其制造方法 |
US9502525B2 (en) | 2012-03-27 | 2016-11-22 | Fujitsu Limited | Compound semiconductor device and method of manufacturing the same |
CN103367142B (zh) * | 2012-03-27 | 2016-05-25 | 富士通株式会社 | 化合物半导体器件及其制造方法 |
CN103849853B (zh) * | 2014-02-21 | 2016-06-08 | 中国科学院半导体研究所 | 缓解mocvd工艺中硅衬底与氮化镓薄膜间应力的方法 |
CN103849853A (zh) * | 2014-02-21 | 2014-06-11 | 中国科学院半导体研究所 | 缓解mocvd工艺中硅衬底与氮化镓薄膜间应力的方法 |
CN103972382A (zh) * | 2014-04-30 | 2014-08-06 | 电子科技大学 | 一种制造半导体材料的方法 |
CN104392909A (zh) * | 2014-10-14 | 2015-03-04 | 北京大学 | 一种AlN外延薄膜生长方法 |
CN105097451A (zh) * | 2015-07-03 | 2015-11-25 | 安徽工程大学 | 低位错密度AlxGa1-xN外延薄膜的制备方法 |
CN105803523A (zh) * | 2016-03-23 | 2016-07-27 | 北京中科优唯科技有限公司 | 一种半导体材料的外延方法 |
CN105803523B (zh) * | 2016-03-23 | 2018-07-20 | 北京中科优唯科技有限公司 | 一种半导体材料的外延方法 |
CN108110097A (zh) * | 2018-01-15 | 2018-06-01 | 中国科学院半导体研究所 | GaN基LED器件及其制备方法 |
CN108365069A (zh) * | 2018-02-06 | 2018-08-03 | 华南师范大学 | 一种高亮度v型极化掺杂深紫外led制备方法 |
CN111048403A (zh) * | 2019-12-19 | 2020-04-21 | 马鞍山杰生半导体有限公司 | 一种氮化铝膜及其制备方法和应用 |
CN111509093A (zh) * | 2020-04-24 | 2020-08-07 | 苏州紫灿科技有限公司 | 一种具有渐变插入层的AlN薄膜及其制备方法 |
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CN100549243C (zh) | 2009-10-14 |
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Effective date of registration: 20191230 Address after: 215600 Huacan photoelectric (Suzhou) Co., Ltd., CHENFENG Road, Zhangjiagang Economic Development Zone, Suzhou City, Jiangsu Province Patentee after: HC SEMITEK (SUZHOU) Co.,Ltd. Address before: 430223 Hubei city of Wuhan province Wuhan University Science Park East Lake New Technology Development Zone business building room 2015 Patentee before: HC SEMITEK Corp. |
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