CN100547696C - 透明导电膜、透明导电膜制造用烧结体靶、透明导电性基材以及使用其的显示装置 - Google Patents

透明导电膜、透明导电膜制造用烧结体靶、透明导电性基材以及使用其的显示装置 Download PDF

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CN100547696C
CN100547696C CNB2005800185929A CN200580018592A CN100547696C CN 100547696 C CN100547696 C CN 100547696C CN B2005800185929 A CNB2005800185929 A CN B2005800185929A CN 200580018592 A CN200580018592 A CN 200580018592A CN 100547696 C CN100547696 C CN 100547696C
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transparent conductive
conductive film
film
less
phase
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Expired - Lifetime
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Chinese (zh)
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CN1965376A (zh
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中山德行
阿部能之
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Mitsui Kinzoku Co Ltd
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Sumitomo Metal Mining Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
    • C04B2235/6585—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage above that of air
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12611—Oxide-containing component
    • Y10T428/12618—Plural oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y10T428/24967—Absolute thicknesses specified
    • Y10T428/24975—No layer or component greater than 5 mils thick
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/24992—Density or compression of components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/269—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension including synthetic resin or polymer layer or component

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Compositions Of Oxide Ceramics (AREA)
CNB2005800185929A 2004-06-07 2005-06-06 透明导电膜、透明导电膜制造用烧结体靶、透明导电性基材以及使用其的显示装置 Expired - Lifetime CN100547696C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP168868/2004 2004-06-07
JP2004168868A JP4539181B2 (ja) 2004-06-07 2004-06-07 透明導電膜、透明導電膜製造用焼結体ターゲット、透明導電性基材及びそれを用いた表示デバイス

Publications (2)

Publication Number Publication Date
CN1965376A CN1965376A (zh) 2007-05-16
CN100547696C true CN100547696C (zh) 2009-10-07

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ID=35499385

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Application Number Title Priority Date Filing Date
CNB2005800185929A Expired - Lifetime CN100547696C (zh) 2004-06-07 2005-06-06 透明导电膜、透明导电膜制造用烧结体靶、透明导电性基材以及使用其的显示装置

Country Status (6)

Country Link
US (3) US20080032106A1 (enExample)
JP (1) JP4539181B2 (enExample)
KR (1) KR101184353B1 (enExample)
CN (1) CN100547696C (enExample)
TW (1) TW200614278A (enExample)
WO (1) WO2005122186A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8728615B2 (en) * 2004-09-13 2014-05-20 Sumitomo Metal Mining Co., Ltd. Transparent conductive film and method of fabricating the same, transparent conductive base material, and light-emitting device
JP4816116B2 (ja) * 2006-02-08 2011-11-16 住友金属鉱山株式会社 スパッタリングターゲット用酸化物焼結体および、それを用いて得られる酸化物膜、それを含む透明基材
JP4816137B2 (ja) * 2006-02-24 2011-11-16 住友金属鉱山株式会社 透明導電膜及び透明導電性基材
JP4760499B2 (ja) * 2006-04-06 2011-08-31 住友金属鉱山株式会社 酸化物焼結体及びそれを用いた酸化物膜透明導電膜の製造方法
JP5127183B2 (ja) 2006-08-23 2013-01-23 キヤノン株式会社 アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法
US20100127611A1 (en) * 2007-05-22 2010-05-27 Masaaki Imura Transparent electrode
CN103030381B (zh) * 2007-07-06 2015-05-27 住友金属矿山株式会社 氧化物烧结体及其制造方法、靶、使用该靶得到的透明导电膜以及透明导电性基材
CN101960625B (zh) * 2008-03-06 2013-01-23 住友金属矿山株式会社 半导体发光元件、该半导体发光元件的制造方法以及使用该半导体发光元件的灯
JP5348132B2 (ja) * 2008-04-16 2013-11-20 住友金属鉱山株式会社 薄膜トランジスタ型基板、薄膜トランジスタ型液晶表示装置および薄膜トランジスタ型基板の製造方法
US8647537B2 (en) 2008-09-19 2014-02-11 Idemitsu Kosan Co., Ltd. Oxide sintered body and sputtering target
JP2012169344A (ja) * 2011-02-10 2012-09-06 Sony Corp 薄膜トランジスタならびに表示装置および電子機器
JP5327282B2 (ja) * 2011-06-24 2013-10-30 住友金属鉱山株式会社 透明導電膜製造用焼結体ターゲット
CN106132901A (zh) * 2014-03-14 2016-11-16 住友金属矿山株式会社 氧化物烧结体、溅射用靶、以及用其得到的氧化物半导体薄膜
GB201705755D0 (en) 2017-04-10 2017-05-24 Norwegian Univ Of Science And Tech (Ntnu) Nanostructure

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652062A (en) * 1993-10-27 1997-07-29 Lucent Technologies Inc. Devices using transparent conductive GaInO3 films
JPH09259640A (ja) * 1996-03-25 1997-10-03 Uchitsugu Minami 透明導電膜
JP4114398B2 (ja) * 2002-05-21 2008-07-09 旭硝子株式会社 Ｉｔｏ膜付き基体の製造方法
JP4168689B2 (ja) * 2002-07-19 2008-10-22 住友金属鉱山株式会社 薄膜積層体
JP2004095240A (ja) * 2002-08-30 2004-03-25 Mitsui Chemicals Inc 透明電極
WO2005083722A1 (ja) * 2004-02-27 2005-09-09 Sumitomo Metal Mining Co., Ltd. 透明導電膜及びそれを用いた透明導電性基材
US8728615B2 (en) * 2004-09-13 2014-05-20 Sumitomo Metal Mining Co., Ltd. Transparent conductive film and method of fabricating the same, transparent conductive base material, and light-emitting device
JP4816116B2 (ja) * 2006-02-08 2011-11-16 住友金属鉱山株式会社 スパッタリングターゲット用酸化物焼結体および、それを用いて得られる酸化物膜、それを含む透明基材
JP4816137B2 (ja) * 2006-02-24 2011-11-16 住友金属鉱山株式会社 透明導電膜及び透明導電性基材

Also Published As

Publication number Publication date
KR20070023720A (ko) 2007-02-28
TWI376701B (enExample) 2012-11-11
US20080032106A1 (en) 2008-02-07
US7960033B2 (en) 2011-06-14
WO2005122186A1 (ja) 2005-12-22
US20100038605A1 (en) 2010-02-18
US7998603B2 (en) 2011-08-16
CN1965376A (zh) 2007-05-16
TW200614278A (en) 2006-05-01
US20100078192A1 (en) 2010-04-01
JP2005347215A (ja) 2005-12-15
JP4539181B2 (ja) 2010-09-08
KR101184353B1 (ko) 2012-09-20

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