CN100546431C

CN100546431C - Flexible printed circuit board and manufacture method thereof, semiconductor device and electronic equipment

Info

Publication number: CN100546431C
Application number: CN 200510119476
Authority: CN
Inventors: 濑古敏春
Original assignee: Sharp Corp
Current assignee: Shenzhen Tongrui Microelectronics Technology Co Ltd
Priority date: 2004-11-11
Filing date: 2005-11-11
Publication date: 2009-09-30
Anticipated expiration: 2025-11-11
Also published as: CN1784119A; JP2008177618A

Abstract

The invention provides thin spaceization that can realize wiring figure and the mechanical strength that can improve wiring figure, prevent to break or the flexible printed circuit board of the generation of peeling off.The wiring figure (7) that flexible printed circuit board of the present invention (3) possesses insulating tape (6) and is formed on this insulating tape (6).For above-mentioned wiring figure (7), be connected the thin thickness of the thickness of the wiring figure (7) in the lift-launch zone of usefulness with semiconductor element (2) than the wiring figure (7) in the non-lift-launch zone.

Description

Flexible printed circuit board and manufacture method thereof, semiconductor device and electronic equipment

Technical field

The present invention relates to flexible printed circuit board, used the manufacture method of semiconductor device and the electronic equipment and the flexible printed circuit board of this substrate.In more detail, the manufacture method that relates to the flexible printed circuit board of semiconductor element mounted thereon, the semiconductor device that has used this substrate and electronic equipment and flexible printed circuit board.

Background technology

Semiconductor device as joint, semiconductor element mounted thereon on flexible printed circuit board has TCP (band carrier package) and COF (chip on the film) etc.As the difference of these TCP and COF, for example can enumerate following some.

At first,, on insulating tape, be provided with the peristome that semiconductor element mounted thereon is used in advance, under the state outstanding, form wiring figure, engaged the fore-end and the semiconductor element of this wiring figure with the cantilever beam shape for TCP.For this point, COF is different with TCP aspect following: the peristome that does not have semiconductor element mounted thereon to use engages, has carried semiconductor element on the wiring figure that forms on the surface of film-insulated band.

In addition, for TCP,,, be difficult to make the wiring figure of wire distribution distance less than 45 μ m so the thickness of wiring figure is more than or equal to 18 μ m because wiring figure is with the outstanding state of cantilever beam shape.For this point, COF is different with TCP aspect following: owing to formed wiring figure on the surface at film-insulated band, so the thickness that can make wiring figure is made the wiring figure of wire distribution distance smaller or equal to 35 μ m easily smaller or equal to 8 μ m.

In addition, for TCP, set in advance the slit on the part of back in bending being installed on the liquid crystal panel etc.For this point, COF is different with TCP aspect following: the slit that does not have bending to use, and in all bendings freely of any position of film-insulated band.

Moreover, for TCP, on the insulating tape that constitutes by polyimides, use bonding agent lamination Copper Foil and form.For this point, COF is different with TCP aspect following: wait on film-insulated being with that forms (casting method) or be made of polyimides at coating, cured polyimide on the Copper Foil back side to form (sputtering method, metalikon) with the stacked copper of sputtering method.

For COF, use film-insulated band according to the bending freely of its application target.In addition, each wiring of the wiring figure that disposes on the surface of film-insulated band is electrically connected with the corresponding terminal of semiconductor element, and externally connecting connector portion is connected with liquid crystal panel or printed base plate etc.For the wiring figure exposed division beyond above-mentioned, the coating solder resist is to guarantee state of insulation.

As mentioned above, though COF is the technology of the thin spaceization (miniaturization) that realizes wiring figure easily, in fact with the wire distribution distance of wiring figure for used thickness 8～18 μ m of wiring figure matchingly more than or equal to 35～50 μ m.But, do not put down in writing patent documentation about the technology of the thickness of wiring figure.On the other hand, in TCP,, for example can enumerate patent documentation 1 as the document of having put down in writing about the technology of the thickness of wiring figure.

In addition, according to Figure 11 and Figure 12 explanation COF in the past.Figure 11 is the profile that the schematic configuration of COF101 in the past is shown.Figure 12 is the profile that the schematic configuration of the COF101 under the situation about having cut off with C-C ' line shown in Figure 11 is shown.As shown in Figure 11 and Figure 12, COF101 has the structure that connects, carried semiconductor element 102 on band carrier 103.

In the band carrier 103 of the COF101 shown in Figure 11 and Figure 12, on insulating tape 104, formed wiring figure 105.About this wiring figure 105, utilize casting method or sputtering method (metalikon) to form Copper Foil or the sputter copper of thickness 8～18 μ m.As shown in Figure 11 and Figure 12, connecting, forming wiring figure 105 with identical thickness in whole zone in the zone of semiconductor element mounted thereon 102 and in addition zone.

(patent documentation 1) opens flat 10-32227 communique (putting down into 10 years (1998) February 3 openly) as the spy of the open communique of Japan

In above-mentioned patent documentation 1, in order to improve mechanical strength, the peristome of semiconductor element mounted thereon and bending have been thickeied (26 μ m) with the thickness of the wiring figure of slit portion, for the top width of expanding wiring figure guaranteeing to connect area, attenuate the thickness (18 μ m) of wiring figure of OLB (lead wire bonding) portion that is connected with liquid crystal panel or substrate.

But, because in fact the spacing of the wiring figure of the peristome of semiconductor element mounted thereon is the meticulousst spacing, so there is the necessity of the thickness of attenuate wiring figure.In addition, promptly use the thickness of 18 identical μ m to form whole positions, also no problem aspect mechanical strength, in the bulk article of reality, also adopted the thick wiring figure of 18 μ m.That is, the technology of record is unpractical in patent documentation 1, in addition the also property of there is no need.Like this, in the TCP of reality, be difficult to realize the thin spaceization of wiring figure.

For this point, COF compares with TCP, realizes the thin spaceization of wiring figure (lead) easily.About the wire distribution distance of the wiring figure (lead) in producing in batches, the limit of TCP is 45 μ m, and 35 μ m have produced in batches for COF, can think that smaller or equal to 30 μ m also be possible.

But,,, found following problem in that COF is realized under the situation of thin spaceization according to inventor's research.

For example, one of problem when making COF realize thin space, under the thin spaceization of wiring figure (lead), particularly wire distribution distance are situation smaller or equal to 30 μ m, at the thickness of wiring figure is under the situation of present 8 μ m, is difficult to sometimes wiring figure (lead) patterned etch is become good shape.

That is, follow the thin spaceization of wiring figure (lead), must also make the narrowed width of wiring figure (lead), be difficult to it is etched into the good section shape, promptly trapezoidal of wiring figure.Therefore, the section shape of wiring figure becomes and more approaches leg-of-mutton section shape, and the thickness of wiring figure (lead) is discrete also becomes big sometimes.

Specifically describe this point according to Figure 13.Figure 13 is the figure that the wiring figure 105 of the COF101 in the past shown in Figure 11 and Figure 12 has been carried out thin spaceization.For example, though surpass under the situation of 35 μ m roughly no problemly at wire distribution distance,, then be difficult to it is carried out etching processing and makes it to become the good section shape, promptly trapezoidal of wiring figure 105 if less than 35 μ m.In this case, as shown in Figure 13, the section shape of wiring figure 105 more approaches triangle.In addition, the discrete change of thickness of the wiring figure 105 after the etching processing is big as can be known, the connection status variation of semiconductor element 102 and wiring figure 105.

As the method that addresses this problem, the filming of Copper Foil or sputter copper (wiring figure) is arranged.If the thickness of attenuate Copper Foil or sputter copper (wiring figure) then can become the wiring figure patterned etch good shape.For example, even be under the situation of 30 μ m,, then easily the wiring figure patterned etch is become good section shape, promptly trapezoidal if be about 5 μ m with the reduced thickness of Copper Foil or sputter copper (wiring figure) at the wire distribution distance of wiring figure (lead).

But, because of the cause of the filming of the wiring figure of the thin spaceization of following wiring figure (lead), the problem that exists the mechanical strength of wiring figure to descend.Therefore, in the connection of semiconductor element, carry between the module installation procedure of operation～COF semiconductor device, wiring figure breaks sometimes or peels off.

About this point, specifically describe according to Figure 14 and Figure 15.Figure 14 has been an attenuate forms the figure of the thickness of the Copper Foil of wiring figure 105 of the COF101 in the past shown in Figure 11 and Figure 12 or sputter copper.Figure 15 is the profile that the schematic configuration of the COF101 under the situation about having cut off with D-D ' line shown in Figure 14 is shown.As shown in Figure 14 and Figure 15, if the thickness of attenuate Copper Foil or sputter copper then can be processed into the wiring figure etching good section shape.But, because the mechanical strength of wiring figure descends, so between the module installation procedure of the connection of semiconductor element, lift-launch operation～COF semiconductor device, the broken string of wiring figure takes place easily or peel off.

Now, as to one of requirement of COF, the adaptation for many pinizations is arranged.In addition, as other requirement, small-sized, slimming is arranged.In order to satisfy these requirements simultaneously, turn to necessary with the film of the thin spaceization of the outside connecting connector portion of the connecting portion of semiconductor element and wiring figure, insulating tape, wiring figure etc.For this reason, also must reduce width, the thickness thinning of wiring figure (lead).But, in COF bending freely on the other hand, must improve the mechanical strength of the filming of following wiring figure, as mentioned above, in technology in the past, there is the problem that is difficult to realize thin spaceization.

Summary of the invention

The invention solves the problems referred to above, its purpose is the manufacture method of the flexible printed circuit board that provides following, the semiconductor device that has used this substrate and electronic equipment and flexible printed circuit board: the thin spaceization that can realize wiring figure, and the wiring figure patterned etch can be become good shape, the width that also can reduce wiring figure (lead) is discrete, in addition, can improve the mechanical strength of wiring figure, prevent the generation of breaking or peeling off.

In order to solve above-mentioned problem, the flexible printed circuit board relevant with the present invention is a kind of flexible printed circuit board of the wiring layer that possesses insulating barrier and form on this insulating barrier, it is characterized in that: above-mentioned wiring layer is formed the figure of regulation, and have the lift-launch zone that connects and carry electronic unit, the thickness of the wiring layer in the above-mentioned lift-launch zone is than the thin thickness of the wiring layer in the non-lift-launch zone.

According to above-mentioned structure, wiring layer is formed the figure of regulation, thus, has many wirings.The figure of so-called regulation is the figure that is made of many wirings that the use according to flexible printed circuit board is at random determined.In addition, wiring layer has the lift-launch zone that connects and carry electronic unit.The so-called zone of carrying is the zone of carrying electronic unit in the wiring layer, specifically, and by the covered zone of electronic unit.Because this carries the thin thickness of the thickness of the wiring layer in zone than the wiring layer in the non-lift-launch zone, so that the processing of connecting portion becomes is easy.So-called non-lift-launch zone is the zone beyond the lift-launch zone in the wiring layer.

Thereby, for example when etching connects up, wiring can be etched into good shape, also can reduce thickness discrete of each wiring with many.Therefore, can realize the miniaturization (thin spaceization) of the figure of wiring layer.

In addition, because the thickness of the wiring layer in non-lift-launch zone is thicker than the thickness of the wiring layer that carries the zone, so can improve the mechanical strength of wiring layer.Therefore, even when the bending flexible printed circuit board, also can prevent the figure broken string of wiring layer or peel off.

In order to solve above-mentioned problem, the flexible printed circuit board relevant with the present invention is a kind of flexible printed circuit board of the wiring layer that possesses insulating barrier and form on this insulating barrier, it is characterized in that: above-mentioned wiring layer is formed the figure of regulation, and have the connecting portion that is connected usefulness with electronic unit, the thickness of the wiring layer in the above-mentioned connecting portion is than the thin thickness of the wiring layer in disconnected (part beyond the connecting portion).

In addition, in order to solve above-mentioned problem, the flexible printed circuit board relevant with the present invention is a kind of flexible printed circuit board of the wiring layer that possesses insulating barrier and form on this insulating barrier, it is characterized in that: above-mentioned wiring layer is formed the figure of regulation, and have the connecting portion that is connected usefulness with this electronic unit connecting and carry in the lift-launch zone of electronic unit, the thickness of wiring layer that has only above-mentioned connecting portion is than the thin thickness of the wiring layer in disconnected.

According to above-mentioned structure, wiring layer is formed the figure of regulation, thus, has many wirings.The figure of so-called regulation is the figure that is made of many wirings that the use according to flexible printed circuit board is at random determined.In addition, in many wirings of wiring layer, has the connecting portion that connects electronic component-use.In the lift-launch zone of connection and lift-launch electronic unit, be provided with this connecting portion.That is, wiring layer becomes and has as the lift-launch zone in the zone of carrying electronic unit and have the structure of the connecting portion that is connected with electronic unit in this lift-launch zone.The thickness of the wiring layer in the connecting portion of the wiring layer that forms on insulating barrier in addition, is than the thin thickness of the wiring layer in disconnected.Therefore, the processing of connecting portion becomes easy.Have, so-called disconnected portion is the zone beyond the connecting portion in the wiring layer again.

In addition, because the thickness of the wiring layer of disconnected portion is thicker than the thickness of the wiring layer of connecting portion, so can improve the mechanical strength of wiring layer.Therefore, even when the bending flexible printed circuit board, also can prevent the figure broken string of wiring layer or peel off.

In order to solve above-mentioned problem, the semiconductor device relevant with the present invention is characterised in that: possess above-mentioned flexible printed circuit board described in each and be connected to semiconductor element on the connecting portion of flexible printed circuit board.According to above-mentioned structure, can make the semiconductor device that in the thin spaceization that can realize wiring, has improved mechanical strength.

In order to solve above-mentioned problem, the electronic equipment relevant with the present invention is characterised in that: possess above-mentioned semiconductor device.According to above-mentioned structure, can make the electronic equipment that in the thin spaceization that can realize wiring, has improved mechanical strength.

In order to solve above-mentioned problem, the manufacture method of the flexible printed circuit board relevant with the present invention is a kind of manufacture method that figure that the wiring layer that forms wiring layer forms operation and this wiring layer is formed the figure of regulation forms the flexible printed circuit board of operation that has on insulating barrier, it is characterized in that: the thin layer chemical industry preface that also has the thickness of the part above-mentioned wiring layer of attenuate, that be connected with electronic unit.

According to above-mentioned structure owing to can utilize the thickness of thin layer chemical industry preface attenuate part wiring layer, that be connected with electronic unit, so and the processing of the coupling part of electronic unit become easy.Thereby, for example when etching connects up, wiring can be etched into good shape, also can reduce thickness discrete of each wiring with many.Therefore, can realize the miniaturization (thin spaceization) of the figure of wiring layer.

Since thicker with the thickness of wiring layer beyond the coupling part of electronic unit than the thickness of the wiring layer of coupling part, so can improve the mechanical strength of wiring layer.Therefore, even can make figure broken string that when the bending flexible printed circuit board, does not also have wiring layer or the flexible printed circuit board of peeling off.

In order to solve above-mentioned problem, the manufacture method of the flexible printed circuit board relevant with the present invention is a kind of manufacture method that figure that the wiring layer that forms wiring layer forms operation and this wiring layer is formed the figure of regulation forms the flexible printed circuit board of operation that has on insulating barrier, it is characterized in that: above-mentioned wiring layer forms operation and has the 2nd wiring layer formation operation that the 1st wiring layer that forms the 1st wiring layer forms formation the 2nd wiring layer on the 1st wiring layer beyond operation and the part that is connected with electronic unit at above-mentioned the 1st wiring layer.

According to above-mentioned structure, on the 1st wiring layer beyond the part that the 1st wiring layer is connected with electronic unit, formed the 2nd wiring layer.That is the thin thickness of the thickness of the part that is connected with electronic unit of wiring layer ratio part in addition.Therefore, the processing of the part that is connected with electronic unit becomes easy.

In addition, since thicker with the thickness of wiring layer beyond the coupling part of electronic unit than the thickness of the wiring layer of coupling part, so can improve the mechanical strength of wiring layer.Therefore, even can make figure broken string that when the bending flexible printed circuit board, does not also have wiring layer or the flexible printed circuit board of peeling off.

According to the following record that illustrates, can understand other purpose, feature and advantage of the present invention fully.In addition, utilize with reference to the following description of accompanying drawing, favourable aspect of the present invention will become and know better.

Description of drawings

Fig. 1 is the figure that an embodiment of the invention are shown, and is the profile that the schematic configuration of semiconductor device is shown.

Fig. 2 is the figure that an embodiment of the invention are shown, and is the profile that the schematic configuration of the semiconductor device under the situation about having cut off with A-A ' line shown in Fig. 1 is shown.

Fig. 3 is the figure that an embodiment of the invention are shown, and is the profile that the schematic configuration of semiconductor module is shown.

Fig. 4 (a)～Fig. 4 (d) is the figure that an embodiment of the invention are shown, and is the profile of schematic configuration that the manufacture method of semiconductor device is shown.

Fig. 5 (a)～Fig. 5 (d) is the figure that another embodiment of the invention is shown, and is the profile of schematic configuration that the manufacture method of semiconductor device is shown.

Fig. 6 is the figure that another execution mode of the present invention is shown, and is the profile that the schematic configuration of semiconductor device is shown.

Fig. 7 is the figure that another execution mode of the present invention is shown, and is the profile that the schematic configuration of the semiconductor device under the situation about having cut off with B-B ' line shown in Fig. 6 is shown.

Fig. 8 is the figure that another execution mode of the present invention is shown, and is the profile that the schematic configuration of semiconductor module is shown.

Fig. 9 (a)～Fig. 9 (d) is the figure that another execution mode of the present invention is shown, and is the profile of schematic configuration that the manufacture method of semiconductor device is shown.

Figure 10 (a)～Figure 10 (d) is the figure that another execution mode of the present invention is shown, and is the profile of schematic configuration that the manufacture method of semiconductor device is shown.

Figure 11 is the profile that the schematic configuration of semiconductor device in the past is shown.

Figure 12 is the profile that the schematic configuration of semiconductor device in the past is shown.

Figure 13 is the profile that the schematic configuration of semiconductor device in the past is shown.

Figure 14 is the profile that the schematic configuration of semiconductor device in the past is shown.

Figure 15 is the profile that the schematic configuration of semiconductor device in the past is shown.

Figure 16 is the figure that another execution mode of the present invention is shown, and is the profile that the schematic configuration of semiconductor device is shown.

Figure 17 is the figure that another execution mode of the present invention is shown, and is the profile that the schematic configuration of semiconductor module is shown.

Figure 18 (a)～Figure 18 (d) is the figure that another execution mode of the present invention is shown, and is the profile of schematic configuration that the manufacture method of semiconductor device is shown.

Figure 19 (a)～Figure 19 (d) is the figure that another execution mode of the present invention is shown, and is the profile of schematic configuration that the manufacture method of semiconductor device is shown.

Figure 20 (a)～Figure 20 (d) is the figure that another execution mode of the present invention is shown, and is the profile of schematic configuration that the manufacture method of semiconductor device is shown.

Figure 21 (a)～Figure 21 (d) is the figure that another execution mode of the present invention is shown, and is the profile of schematic configuration that the manufacture method of semiconductor device is shown.

Embodiment

(execution mode 1)

If it is the 1st execution mode of the present invention is described, then as described below according to Fig. 1 to Fig. 4 (d).Fig. 1 is the profile that the schematic configuration of the semiconductor device relevant with present embodiment is shown.In addition, Fig. 2 is the profile that the schematic configuration of the semiconductor device under the situation about having cut off with A-A ' line shown in Fig. 1 is shown.

As shown in Fig. 1 and Fig. 2, semiconductor device 1 possesses semiconductor element (electronic unit) 2 and band carrier (flexible printed circuit board) 3.Semiconductor element 2 is connected with band carrier 3, becomes the state that is carried on band carrier 3.In addition, sealed insulative resin 4 in the gap that between band carrier 3 and semiconductor element 2, exists.Like this, in the present embodiment, be changed to example explanation with the semiconductor device that on band carrier 3, has carried the COF type of semiconductor element 2.

As above-mentioned semiconductor element 2, for example can enumerate the integrated circuit (LSI: large scale integrated circuit) of CPU (CPU) or memory etc.In addition, on semiconductor element 2, be provided with a plurality of projected electrodes 5.

Projected electrode 5 is electrodes of having given prominence in the approximate vertical direction from the face of a side relative with band carrier 3 when semiconductor element 2 being carried on band carrier 3, is the electrode that is used for being electrically connected semiconductor element 2 and band carrier 3.Therefore, projected electrode 5 is made of conductive material and gets final product, and its shape does not limit.But, preferably carry out the shape that is connected with band carrier 3 easily.As projected electrode 5, for example can make cylindric, the corner post shape or the spherical electrode that constitute by Au or scolding tin.

Band carrier 3 is used for connecting, semiconductor element mounted thereon 2, possesses insulating tape (insulating barrier) 6, wiring figure (wiring layer, figure) 7 and solder resist 8.

Insulating tape 6 is basis materials of laying-out and wiring figure 7 usefulness on its face.Insulating tape 6 has insulating properties, certainly because be used with various shapes, so the flexibility height (having pliability) of bending freely is necessary.Therefore, as the material that forms insulating tape 6, for example can use the resin material of polyimides, glass epoxy resin, polyester etc.Have again, in the present embodiment, illustrate as example with the insulating tape 6 that has used polyimide resin.

In addition, in order to carry out bending easily, to also have in order to make semiconductor device 1 realize miniaturization, slimming, insulating tape 6 is the ribbon base material of film preferably.The thickness of suitably setting insulating tape 6 according to application target gets final product, but for example is preferably in the scope of 15～40 μ m.

Wiring figure 7 is the wirings that are formed diagram shape on the surface of insulating tape 6.By utilize casting method or sputtering method (metalikon) etc. form Copper Foil or sputter copper (below, only be generically and collectively referred to as " Copper Foil ") on the insulating tape 6 thus and this Copper Foil be etched into desirable figure form wiring figure 7.In the present embodiment,, be that example illustrates with copper, but be not limited to this, for example can use the metal with conductivity of silver etc. as the material that in wiring figure 7, is used.

Have again,, on wiring figure 7, be provided with outside terminal for connecting (not shown) for semiconductor device 1 is connected with other electronic unit.In addition, having carried out not shown tin plating or gold on the surface of above-mentioned wiring figure 7 electroplates.The detailed structure of this wiring figure 7 is narrated in the back.

Solder resist 8 is the protective layers that form on wiring figure 7.Solder resist 8 for example is made of the thermal endurance cladding material, prevents exposing beyond the connecting portion.Thereby, the part beyond the zone of semiconductor element mounted thereon 2 or be not provided with on the wiring figure 7 of part of outside terminal for connecting and formed solder resist 8.That is, when on band carrier 3, connecting, having carried semiconductor element 2 etc., on the wiring figure 7 that exposes, formed solder resist 8.

The peristome of semiconductor element mounted thereon 2 usefulness is not set on above-mentioned insulating tape 6.Therefore, by being bonded on projected electrode 5 that has been set up on the semiconductor element 2 and the wiring figure 7 that on the surface of insulating tape 6, forms, thereby semiconductor element 2 is connected, carries on the insulating tape 6.That is, each wiring by the wiring figure 7 that disposed on the surface that is connected insulating tape 6 is carried out this with projected electrode 5 corresponding to the semiconductor element 2 of each wiring and is connected.Thus, be electrically connected wiring figure 7 and semiconductor element 2.

The thickness of above-mentioned wiring figure 7 is partly different.Specifically, the zone (is carried in the zone of the connection in the wiring figure 7, semiconductor element mounted thereon 2; Connecting portion) thickness than do not connect, the thin thickness in the zone (non-lift-launch zone) of semiconductor element mounted thereon 2.Thus, can make wiring figure 7 realize thin spaceization in carrying the zone, can improve the mechanical strength of wiring figure 7 in non-lift-launch zone, the intensity of semiconductor device 1 has also improved.

Territory, so-called pickup zone is arranged again, is the zone of connecting wiring figure 7 and semiconductor element 2 and semiconductor element mounted thereon 2.That is, the part of pickup zone domain representation connection bump electrode 5 and wiring figure 7, but when on band carrier 3, having carried semiconductor element 2, the zone that expression semiconductor element 2 is shared.Thereby the wiring figure 7 that is connected with semiconductor element 2 in carrying the zone is so-called leads.In addition, so-called non-lift-launch zone is to carry zone in addition, zone.

In addition, so-called connecting portion, with the semiconductor element 2 actual parts that are connected, so-called disconnected portion is the zone beyond the connecting portion in the expression wiring figure 7.In the present embodiment, in carrying the zone, comprised connecting portion.

The thickness of the wiring figure 7 in above-mentioned lift-launch zone for example is preferably in the scope of 3～6 μ m.Under the situation of thickness less than 3 μ m of wiring figure 7, projected electrode 5 has taken place sometimes contacted such unfavorable condition with the surface of insulating tape 6.In addition, surpass under the situation of 6 μ m, be difficult to make the shape of the wiring figure 7 that forms because of etching to become good or become good with the connection status of semiconductor element 2 at the thickness of wiring figure 7.

But the thickness that carries the wiring figure 7 in zone is not limited to above-mentioned thickness.Promptly, the thickness of wiring figure 7 that carries the zone is so long as can realize thickness that the thin spaceization of wiring figure 7 uses, promptly utilize pattern etching can make wiring figure 7 become the thickness that good shape uses to get final product, so long as projected electrode 5 does not get final product with the thickness that insulating tape 6 contacts.

In addition, under the situation of wire distribution distance less than 35 μ m as the interval of each wiring, above-mentioned wiring figure 7 has better effect.Under the situation of wire distribution distance, can make the band carrier 3 of realizing so-called thin spaceization less than 35 μ m.

Have again, be connected with other electronic unit, also can make semiconductor module (electronic equipment) 9 by above-mentioned semiconductor device 1.In this semiconductor module 9, for example semiconductor device 1 also can drive, control other electronic unit.Fig. 3 is the profile that the schematic configuration of the semiconductor module 9 in the present embodiment is shown.In Fig. 3, show the situation that semiconductor device 1 is used for liquid crystal indicator.In this case, as other electronic unit, can enumerate liquid crystal panel 10 or other printed base plate 11.In semiconductor module 9, outside terminal for connecting and the above-mentioned liquid crystal panel 10 or other the printed base plate 11 etc. of the wiring figure 7 in the semiconductor device 1 have been connected.

Secondly, according to Fig. 4 (a)～Fig. 4 (d) manufacture method of the semiconductor device 1 with said structure is described.Fig. 4 (a)～Fig. 4 (d) is the profile of schematic configuration that the manufacture method of semiconductor device 1 is shown.The manufacture method of the semiconductor device 1 in the present embodiment is to carry out etching processing by the Copper Foil that insulating tape 6 surfaces are upward formed to utilize the thickness that etches partially the Copper Foil that makes the lift-launch zone than non-method of carrying the thin thickness of regional Copper Foil before formation wiring figure 7.

At first, as shown in Fig. 4 (a), utilize casting method or sputtering method (metalikon) etc. to form Copper Foil (wiring layer) 12 on insulating tape 6 surfaces, making its thickness is 8～18 μ m.At this, so-called casting method is the method that makes its sclerosis behind the polyimides having applied on the Copper Foil.On the other hand, so-called sputtering method (metalikon) is to have formed with sputtering method to utilize galvanoplastic that the copper electrodeposited coating is separated out to pile up the method for copper electrodeposited coating behind the metal seed layer on the film of polyimides or kapton (Kapton) etc.

Secondly, as shown in Fig. 4 (b), on the surface of the Copper Foil 12 of the part that is equivalent to carry the zone, carry out etching processing.Carry out this etching processing like this, make the thickness that carries regional Copper Foil 12 than the non-thin thickness that carries the Copper Foil 12 in zone.Below this etching processing is called and etches partially.

About etching partially, for example use and be with whole applying device, by adjusting temperature, time, speed etc., the thickness of may command Copper Foil 12 makes the thickness of the Copper Foil 12 that carries the zone become desirable thickness.

Then, as shown in Fig. 4 (c), carry out making Copper Foil 12 become the figure of regulation, form desirable wiring figure 7 the etching processing of Copper Foil 12.In whole zone that should form wiring figure 7 of carrying zone and non-lift-launch zone, carry out the formation of this wiring figure 7.Thereafter, as shown in Fig. 4 (d), coating solder resist 8 on the wiring figure 7 of the part of having exposed when having carried semiconductor element 2 in the operation afterwards.Make band carrier 3 thus.

Secondly, on the band carrier of having made of said method 3, connect, semiconductor element mounted thereon 2.Make that projected electrode 5 and wiring figure 7 are corresponding and be connected this projected electrode 5 by configuring semiconductor element 2 and band carrier 3 and carry out this with wiring figure 7 and be connected.For example can utilize Au-Sn eutectic joint to wait and carry out this connection.Thus, connection on band carrier 3, semiconductor element mounted thereon 2.

After connecting on the band carrier 3, having carried semiconductor element 2, inject insulative resin 4 in the gap that between semiconductor element 2 and band carrier 3, constitutes and seal.By inject, sealed insulation resin 4, can guarantee in the coupling part of semiconductor element 2 and wiring figure 7 and the state of insulation outside.Make the semiconductor device 1 of present embodiment thus.

Have again,, on the outside terminal for connecting of wiring figure 7, for example connect liquid crystal panel or printed base plate etc. and get final product with under above-mentioned semiconductor device 1 and the situation that other electronic unit is connected.

As mentioned above, in the band carrier 3 that the semiconductor device of COF type is in the present embodiment used, the thickness that carries regional wiring figure 7 is than the non-thin thickness that carries the wiring figure 7 in zone.Particularly, the non-thickness that carries the wiring figure 7 in zone is 8～18 μ m, and the thickness of the wiring figure 7 in lift-launch zone is 3～6 μ m.

Thus, the band carrier of using with the semiconductor device of in the past COF type relatively can make the shape of the wiring figure 7 after the etching become well, and can make the connection status of wiring figure 7 and semiconductor element 2 become good.In addition, and compared in the past, also can improve non-mechanical strength of carrying the wiring figure 7 in zone comparably, can with because of the broken string of wiring figure 7 or peel off cause bad reduce to be lower than equal in the past 50%.

(execution mode 2)

If it is the 2nd execution mode of the present invention is described, then as described below according to Fig. 1 to Fig. 3 and Fig. 5 (d).Fig. 1 is the profile that the schematic configuration of the semiconductor device relevant with present embodiment is shown.In addition, Fig. 2 is the profile that the schematic configuration of the semiconductor device under the situation about having cut off with A-A ' line shown in Fig. 1 is shown.

As shown in fig. 1, semiconductor device 1 possesses semiconductor element 2 and band carrier 3.In the present embodiment, compare with above-mentioned execution mode 1, the manufacture method difference of semiconductor device 1, the structure of semiconductor device 1 is identical.Therefore, attached for the member that in execution mode 1, has illustrated with prosign, omit its explanation.In addition, in the present embodiment, the manufacture method of semiconductor device 1 is described mainly.In addition, only otherwise explanation in advance, about the term that uses in the present embodiment, also supposition has the meaning same with above-mentioned execution mode 1.

At this, the manufacture method of the semiconductor device 1 in the present embodiment is described according to Fig. 5 (a)～Fig. 5 (d).Fig. 5 (a)～Fig. 5 (d) is the profile of schematic configuration that the manufacture method of the semiconductor device 1 in the present embodiment is shown.

The manufacture method of the semiconductor device 1 in the present embodiment is to make the thickness that carries regional Copper Foil than non-method of carrying the thin thickness of regional Copper Foil by the Copper Foil that forms on insulating tape 6 surfaces being carried out utilize after etching has been processed to form wiring figure 7 etching partially.

At first, as shown in Fig. 5 (a), utilize casting method or sputtering method (metalikon) etc. to form Copper Foil 12 on insulating tape 6 surfaces, making its thickness is 8～18 μ m.

Secondly, as shown in Fig. 5 (b), carry out making Copper Foil 12 become the figure of regulation, form desirable wiring figure 7 the etching processing of Copper Foil 12.In whole zone that should form wiring figure 7 of carrying zone and non-lift-launch zone, carry out the formation of this wiring figure 7.

Then, as shown in Fig. 5 (c), on the surface of the wiring figure 7 of the part that is equivalent to carry the zone, carry out etching processing.Utilization etches partially carries out this etching processing.That is, carry out this etching processing like this, make the thickness that carries regional wiring figure 7 than the non-thin thickness that carries the wiring figure 7 in zone.Thereafter, as shown in Fig. 5 (d), coating solder resist 8 on the wiring figure 7 of the part of having exposed when having carried semiconductor element 2 in the operation afterwards.Make band carrier 3 thus.

Secondly, similarly on band carrier 3, be connected with above-mentioned execution mode 1, semiconductor element mounted thereon 2.Then, after connecting on the band carrier 3, having carried semiconductor element 2, inject insulative resin 4 in the gap that between semiconductor element 2 and band carrier 3, constitutes and seal.Make the semiconductor device 1 of present embodiment thus.

Have again, above-mentioned semiconductor device 1 is being connected under the situation that makes semiconductor module 9 with other electronic unit, as shown in Figure 3, on the outside terminal for connecting of wiring figure 7, for example connect liquid crystal panel 10 or printed base plate 11 etc. and get final product.

In addition, for the band carrier 3 in the present embodiment, behind the forming of the wiring figure 7 that obtains by etching processing, utilize to have etched partially attenuate and carry the thickness of the wiring figure 7 in zone.Therefore, compare, can make the thickness of the wiring figure 7 that carries the zone become more even with the band carrier 3 of execution mode 1.

(execution mode 3)

If it is the 3rd execution mode of the present invention is described, then as described below according to Fig. 6 to Fig. 9 (d).Fig. 6 is the profile that the schematic configuration of the semiconductor device relevant with present embodiment is shown.In addition, Fig. 7 is the profile that the schematic configuration of the semiconductor device under the situation about having cut off with B-B ' line shown in Fig. 6 is shown.

As shown in Fig. 6 and Fig. 7, semiconductor device 21 possesses semiconductor element 2 and band carrier (flexible printed circuit board) 23.Semiconductor element 2 is connected with band carrier 23, becomes the state that is carried on band carrier 23.In addition, sealed insulative resin 4 in the gap that between band carrier 23 and semiconductor element 2, exists.Like this, in the present embodiment, also be changed to example explanation with the semiconductor device that on band carrier 23, has carried the COF type of semiconductor element 2.Have again, attached for the member identical with prosign with the member that in execution mode 1 and 2, has illustrated, omit its explanation.In addition, only otherwise explanation in advance,, suppose to have same meaning about term identical in the term that uses in the present embodiment with execution mode 1.

On semiconductor element 2, be provided with a plurality of projected electrodes 5.In addition, band carrier 23 is used for connecting, semiconductor element mounted thereon 2, possesses insulating tape 6, wiring figure (wiring layer, figure) 27 and solder resist 8.

Wiring figure 27 is the wirings that are formed diagram shape on the surface of insulating tape 6.By utilizing casting method or sputtering method (metalikon) etc. to form wiring figure 27 forming Copper Foil or sputter copper (below, only be generically and collectively referred to as " Copper Foil ") on the insulating tape 6 and this Copper Foil is etched into desirable figure.In addition, in the present embodiment,, be that example illustrates with copper, but be not limited to this, for example can use the metal with conductivity of silver etc. as the material that in wiring figure 27, is used.

Wiring figure 27 possesses the 1st wiring layer 27a and the 2nd wiring layer 27b.The 1st wiring layer 27a is the layer that is made of the Copper Foil that is provided with on insulating tape 6, and the 2nd wiring layer 27b is the layer that is made of the Copper Foil that is provided with on the 1st wiring layer 27a.

On the part on the 1st wiring layer 27a, be provided with above-mentioned the 2nd wiring layer 27b.In the present embodiment, be provided with the 2nd wiring layer 27b in the non-lift-launch zone on the 1st wiring layer 27a.That is, the thickness of the non-wiring figure 27 that carries the zone is thicker than the thickness of the wiring figure 27 that carries the zone.Thus, by controlling the thickness of the 1st wiring layer 27a, can realize the thin spaceization of wiring figure 27.In addition, by controlling the thickness of the 2nd wiring layer 27b, can improve the mechanical strength of wiring figure 27.

The thickness of above-mentioned the 1st wiring layer 27a for example is preferably in the scope of 3～6 μ m.Under the situation of thickness less than 3 μ m of the 1st wiring layer 27a, projected electrode 5 has taken place sometimes contacted such unfavorable condition with the surface of insulating tape 6.In addition, surpass under the situation of 6 μ m, be difficult to make the shape of the wiring figure 27 that forms because of etching to become good or become good with the connection status of semiconductor element 2 at the thickness of the 1st wiring layer 27a.

In addition, the thickness of suitably setting the 2nd wiring layer 27b according to the thickness of the 1st wiring layer 27a gets final product.For example, under the situation in the thickness of the 1st wiring layer 27a is the scope of 3～6 μ m, the thickness of the 2nd wiring layer 27b preferably makes the thickness in the scope that is aggregated in 8～18 μ m of thickness of itself and the 1st wiring layer 27a.

But the thickness of the 1st wiring layer 27a is not limited to above-mentioned thickness.Promptly, the thickness of the 1st wiring layer 27a is so long as can realize thickness that the thin spaceization of wiring figure 27 uses, promptly utilize pattern etching can make wiring figure 27 become the thickness that good shape uses to get final product, so long as projected electrode 5 does not get final product with the thickness that insulating tape 6 contacts.

In addition, the thickness of the 2nd wiring layer 27b also is not limited to above-mentioned thickness, so long as the thickness that can obtain mechanical strength fully according to the thickness of the total of the 1st wiring layer 27a and the 2nd wiring layer 27b gets final product.

In addition, under the situation of wire distribution distance less than 35 μ m as the interval of each wiring, above-mentioned wiring figure 27 has better effect.Under the situation of wire distribution distance, can make the band carrier 23 of having realized so-called thin spaceization less than 35 μ m.

Have again,, on wiring figure 27, be provided with outside terminal for connecting (not shown) for semiconductor device 21 is connected with other electronic unit.In addition, having carried out not shown tin plating or gold on the surface of above-mentioned wiring figure 27 electroplates.

The peristome of semiconductor element mounted thereon 21 usefulness is not set on above-mentioned insulating tape 6.Therefore, by being bonded on projected electrode 5 that has been set up on the semiconductor element 21 and the wiring figure 27 that on the surface of insulating tape 6, forms, thereby semiconductor element 21 is connected, carries on the insulating tape 6.That is, each wiring by the wiring figure 27 that disposed on the surface that is connected insulating tape 6 is carried out this with projected electrode 5 corresponding to the semiconductor element 21 of each wiring and is connected.Thus, be electrically connected wiring figure 27 and semiconductor element 21.

Have, above-mentioned semiconductor device 21 also can make semiconductor module (electronic equipment) 29 by being connected with other electronic unit again.In this semiconductor module 29, for example semiconductor device 21 also can drive, control other electronic unit.Fig. 8 is the profile that the schematic configuration of the semiconductor module 29 in the present embodiment is shown.In Fig. 8, show the situation that semiconductor device 21 is used for liquid crystal indicator.In this case, as other electronic unit, can enumerate liquid crystal panel 10 or other printed base plate 11.In semiconductor module 29, outside terminal for connecting and the above-mentioned liquid crystal panel 10 or other the printed base plate 11 etc. of the wiring figure 27 in the semiconductor device 21 have been connected.

Secondly, according to Fig. 9 (a)～Fig. 9 (d) manufacture method of the semiconductor device 21 with said structure is described.Fig. 9 (a)～Fig. 9 (d) is the profile of schematic configuration that the manufacture method of semiconductor device 21 is shown.The manufacture method of the semiconductor device 21 in the present embodiment is to utilize the thickness that makes the non-Copper Foil that the carries the zone thick method of thickness than the Copper Foil that carries the zone that waits of electroplating before being processed to form wiring figure 27 carrying out etching by the Copper Foil that forms on to insulating tape 6 surfaces.

At first, as shown in Fig. 9 (a), utilize casting method or sputtering method (metalikon) etc. to form the 1st copper foil layer 32 on insulating tape 6 surfaces, making its thickness is 3～6 μ m.Then, as shown in Fig. 9 (b), on the 1st copper foil layer 32 of the part that is equivalent to non-lift-launch zone, form the 2nd copper foil layer 33 again.

For example utilize to electroplate the copper electrodeposited coating is separated out, form the 2nd copper foil layer 33 on the 1st copper foil layer 32 by being deposited in.Thus, can make the thickness of the Copper Foil that carries regional and non-lift-launch zone different.In addition, utilizing under the situation of electroplating formation the 2nd copper foil layer 33, can at random control the thickness of the 2nd copper foil layer 33.Therefore, can suitably change the thickness of the 2nd copper foil layer 33 according to the thickness of the 1st copper foil layer 32.Thereby, for example also form the 2nd copper foil layer 33 easily like this, make that the thickness of total of the 1st copper foil layer 32 and the 2nd copper foil layer 33 is 8～18 μ m.

Then, as shown in Fig. 9 (c), carry out making the 1st copper foil layer 32 and the 2nd copper foil layer 33 become the figure of regulation, form desirable wiring figure 27 the etching processing of the 1st copper foil layer 32 and the 2nd copper foil layer 33.Thus, form the wiring figure 27 that constitutes by the 1st wiring layer 27a and the 2nd wiring layer 27b.In whole zone that should form wiring figure 27 of carrying zone and non-lift-launch zone, carry out the formation of this wiring figure 27.

Thereafter, as shown in Fig. 9 (d), coating solder resist 8 on the wiring figure 27 of the part of having exposed when having carried semiconductor element 22 in the operation afterwards.Make band carrier 23 thus.

Secondly, on the band carrier of having made of said method 23, connect, semiconductor element mounted thereon 2.Make that projected electrode 5 and wiring figure 27 are corresponding and be connected this projected electrode 5 by configuring semiconductor element 2 and band carrier 23 and carry out this with wiring figure 27 and be connected.For example can utilize Au-Sn eutectic joint to wait and carry out this connection.Thus, connection on band carrier 23, semiconductor element mounted thereon 22.

After connecting on the band carrier 23, having carried semiconductor element 2, inject insulative resin 4 in the gap that between semiconductor element 2 and band carrier 23, constitutes and seal.By inject, sealed insulation resin 4, can guarantee in the coupling part of semiconductor element 2 and wiring figure 27 and the state of insulation outside.Make the semiconductor device 21 of present embodiment thus.

Have again,, on the outside terminal for connecting of wiring figure 27, for example connect liquid crystal panel or printed base plate etc. and get final product with under above-mentioned semiconductor device 21 and the situation that other electronic unit is connected.

As mentioned above, in the band carrier 23 that the semiconductor device of COF type is in the present embodiment used, the thickness that the non-thickness ratio that carries the wiring figure 27 in zone carries regional wiring figure 27 is thick.Particularly, the thickness that carries the wiring figure 27 in zone is 3～6 μ m, but not the thickness of the wiring figure 27 in lift-launch zone is 8～18 μ m.

Thus, the band carrier of using with the semiconductor device of in the past COF type relatively can make the shape of the wiring figure 27 after the etching become well, and can make the connection status of wiring figure 27 and semiconductor element 2 become good.In addition, and compared in the past, also can improve non-mechanical strength of carrying the wiring figure 27 in zone comparably, can with because of the broken string of wiring figure 27 or peel off cause bad reduce to be lower than equal in the past 50%.

(execution mode 4)

If it is the 4th execution mode of the present invention is described, then as described below according to Fig. 6 to Fig. 8 and Figure 10 (d).Fig. 6 is the profile that the schematic configuration of the semiconductor device relevant with present embodiment is shown.In addition, Fig. 7 is the profile that the schematic configuration of the semiconductor device under the situation about having cut off with B-B ' line shown in Fig. 6 is shown.

As shown in Figure 6, semiconductor device 21 possesses semiconductor element 2 and band carrier 23.In the present embodiment, compare with above-mentioned execution mode 3, the manufacture method difference of semiconductor device 21, the structure of semiconductor device 21 is identical.Therefore, attached for the member that in execution mode 3, has illustrated with prosign, omit its explanation.In addition, in the present embodiment, the manufacture method of semiconductor device 21 is described mainly.In addition, only otherwise explanation in advance, about the term that uses in the present embodiment, also supposition has the meaning same with above-mentioned execution mode 3.

At this, specify the manufacture method of the semiconductor device 21 in the present embodiment according to Figure 10 (a)～Figure 10 (d).Figure 10 (a)～Figure 10 (d) is the profile of schematic configuration that the manufacture method of the semiconductor device 21 in the present embodiment is shown.

The manufacture method of the semiconductor device 21 in the present embodiment is to make the non-thick method of thickness of carrying the thickness of regional Copper Foil than the Copper Foil in lift-launch zone by the Copper Foil that forms is carried out utilize plating to wait after etching has been processed to form wiring figure 27 on insulating tape 6 surfaces.

At first, as shown in Figure 10 (a), utilize casting method or sputtering method (metalikon) etc. to form the 1st copper foil layer 32 on insulating tape 6 surfaces, making its thickness is 3～6 μ m.

Secondly, as shown in Figure 10 (b), carry out etching processing, make the 1st copper foil layer 32 become the figure of regulation, form the 1st wiring layer 27a with desirable figure to the 1st copper foil layer 32.In whole zone that should form wiring figure 27 of carrying zone and non-lift-launch zone, carry out the formation of the 1st wiring layer 27a.

Then, as shown in Figure 10 (c), on the surface of the 1st wiring layer 27a that is equivalent to the regional part of non-lift-launch, pile up Copper Foil again to form the 2nd wiring layer 27b.Thus, form the 1st wiring layer 27a of the shape that is processed into desirable figure by being etched and the wiring figure 27 that the 2nd wiring layer 27b constitutes.For example utilize to electroplate the copper electrodeposited coating is separated out, form the 2nd wiring layer 27b on the 1st wiring layer 27a by being deposited in.

Thus, can make the thickness of the wiring figure 27 that carries regional and non-lift-launch zone different.In addition, utilizing under the situation of electroplating formation the 2nd wiring layer 27b, can at random control the thickness of the 2nd wiring layer 27b.Therefore, can suitably change the thickness of the 2nd wiring layer 27b according to the thickness of the 1st wiring layer 27a.Thereby, for example also form the 2nd wiring layer 27b easily like this, make that the thickness of total of the 1st wiring layer 27a and the 2nd wiring layer 27b is 8～18 μ m.

Thereafter, as shown in Figure 10 (d), coating solder resist 8 on the wiring figure 27 of the part of having exposed when having carried semiconductor element in the operation afterwards.Make band carrier 23 thus.

Secondly, similarly on band carrier 23, be connected with above-mentioned execution mode 3, semiconductor element mounted thereon 2.Then, after connecting on the band carrier 23, having carried semiconductor element 2, inject insulative resin 4 in the gap that between semiconductor element 2 and band carrier 23, constitutes and seal.Make the semiconductor device 21 of present embodiment thus.

Have again, same with execution mode 3, above-mentioned semiconductor device 21 is being connected under the situation that makes semiconductor module with other electronic unit, as shown in Figure 8, on the outside terminal for connecting of wiring figure 27, is for example connecting liquid crystal panel 10 or printed base plate 11 etc. and get final product.

(execution mode 5)

If it is the 5th execution mode of the present invention is described, then as described below according to Figure 16 to Figure 18 (d).Figure 16 is the profile that the schematic configuration of the semiconductor device relevant with present embodiment is shown.

As shown in Figure 16, semiconductor device 51 possesses semiconductor element 2 and band carrier (flexible printed circuit board) 53.Semiconductor element 2 is connected with band carrier 53, becomes the state that is carried on band carrier 53.In addition, sealed insulative resin 4 in the gap that between band carrier 53 and semiconductor element 2, exists.Like this, in the present embodiment, also be changed to example explanation with the semiconductor device that on band carrier 53, has carried the COF type of semiconductor element 2.Have again, attached for the member identical with prosign with the member that in execution mode 1, has illustrated, omit its explanation.In addition, only otherwise explanation in advance,, suppose to have same meaning about term identical in the term that uses in the present embodiment with execution mode 1.

On semiconductor element 2, be provided with a plurality of projected electrodes 5.In addition, band carrier 53 is used for connecting, semiconductor element mounted thereon 2, possesses insulating tape 6, wiring figure 57 and solder resist 8.

Wiring figure 57 is the wirings that are formed diagram shape on the surface of insulating tape 6.Also this Copper Foil is etched into desirable figure by utilizing casting method or sputtering method (metalikon) etc. on insulating tape 6, to form Copper Foil, thereby has formed wiring figure 57.In the present embodiment,, be that example illustrates with copper, but be not limited to this, for example can use the metal with conductivity of silver etc. as the material that in wiring figure 57, is used.

The thickness of above-mentioned wiring figure 57 is partly different.Specifically, the thickness that has only the part (connecting portion) that wiring figure 57 is connected with semiconductor element 2 is than the thin thickness of in addition part (disconnected portion).Thus, can make wiring figure 57 realize thin spaceization in connecting portion, can improve the mechanical strength of wiring figure 57 in disconnected, the intensity of semiconductor device 51 has also improved.

In addition, in the present embodiment, have only the thickness attenuation of connecting portion, at the outside of connecting portion and inboard (compare by the overseas side in pickup zone with connecting portion and to carry the zone inboard) thickening.Moreover in the present embodiment, the thickness of the wiring figure 57 in the outside of connecting portion is identical thickness with the thickness of the wiring figure 57 of the inboard of connecting portion.

Have, so-called connecting portion is the part that the projected electrode 5 of semiconductor element 2 has been connected with wiring figure 57, is comprised in the above-mentioned lift-launch zone again.That is, the projected electrode 5 of semiconductor element 2 becomes connecting portion with the part that wiring figure 57 is connected in the lift-launch zone.

In addition, the length that above-mentioned connecting portion is formed connecting portion has been grown about 40 μ m than the length of projected electrode (connecting elements) 5.So-called should " length of connecting portion ", be the length of part of the thickness attenuation of the wiring figure 57 in the connecting portion, so-called " length of projected electrode 5 " is the design length of projected electrode 5.That is, in this case, if projected electrode 5 is connected to the middle body of connecting portion, then the distance of the end of the side end of projected electrode 5 and connecting portion is about 20 μ m.By doing like this, for example semiconductor element 2 to the connection precision of band carrier 53 is ± 15 μ m, even the tolerance in the manufacturing dimension of projected electrode 5 is ± situation of 10 μ m under, also can avoid under semiconductor element 2 departs from the state of connecting portion, being connected to the situation on the band carrier 53.But above-mentioned size is not limited to 40 μ m.In addition, the thickness of the wiring figure 57 of above-mentioned connecting portion for example is preferably in the scope of 3～6 μ m.But the thickness of wiring figure 57 is not limited to this, gets final product so long as can realize the thickness that the thin spaceization of wiring figure 57 is used, so long as projected electrode 5 does not get final product with the thickness that insulating tape 6 contacts.

In addition, under the situation of wire distribution distance less than 35 μ m as the interval of each wiring, above-mentioned wiring figure 57 has better effect.Under the situation of wire distribution distance, can make the band carrier of having realized so-called thin spaceization less than 35 μ m.

Have again,, on wiring figure 57, be provided with outside terminal for connecting (not shown) for semiconductor device 51 is connected with other electronic unit.In addition, having carried out not shown tin plating or gold on the surface of above-mentioned wiring figure 57 electroplates.

The peristome of semiconductor element mounted thereon 2 usefulness is not set on above-mentioned insulating tape 6 in addition.Therefore, by being bonded on projected electrode 5 that has been set up on the semiconductor element 2 and the wiring figure 57 that on the surface of insulating tape 6, forms, semiconductor element 2 is connected, carries on the insulating tape 6.That is, each wiring by the wiring figure 57 that disposed on the surface that is connected insulating tape 6 is carried out this with projected electrode 5 corresponding to the semiconductor element 2 of each wiring and is connected.Thus, be electrically connected wiring figure 57 and semiconductor element 2.

Have, above-mentioned semiconductor device 51 can make semiconductor module by being connected also with other electronic unit again.In this semiconductor module, for example semiconductor device 51 also can drive, control other electronic unit.Figure 17 is the profile that the schematic configuration of the semiconductor module 59 in the present embodiment is shown.In Figure 17, show the situation that semiconductor device 51 is used for liquid crystal indicator.In this case, as other electronic unit, can enumerate liquid crystal panel 10 or other printed base plate 11.In semiconductor module 59, outside terminal for connecting and the above-mentioned liquid crystal panel or other the printed base plate etc. of the wiring figure 57 in the semiconductor device 51 have been connected.

Secondly, according to Figure 18 (a)～Figure 18 (d) manufacture method of the semiconductor device 51 with said structure is described.Figure 18 (a)～Figure 18 (d) is the profile of schematic configuration that the manufacture method of semiconductor device 51 is shown.The manufacture method of the semiconductor device 51 in the present embodiment is to carry out etching processing utilized the thickness that makes the Copper Foil that the is equivalent to connecting portion method than the thin thickness of the Copper Foil of disconnected portion that etches partially before forming wiring figure 57 by insulating tape 6 surface being gone up the Copper Foils that form.

At first, as shown in Figure 18 (a), utilize casting method or sputtering method (metalikon) etc. to form Copper Foil 62 on insulating tape 6 surfaces, making its thickness is 8～18 μ m.

Secondly, as shown in Figure 18 (b), on the surface of the Copper Foil 62 that is equivalent to the part of connecting portion (OK), carry out etching processing (etching partially).Carry out the processing of this etching like this, make the thickness of Copper Foil 62 of connecting portion than the thin thickness of the Copper Foil 62 of disconnected portion.In addition, carry out this etching processing like this, make the length ratio of connecting portion grow about 40 μ m with the length of the projected electrode 5 of latter linked semiconductor element 2.

Then, as shown in Figure 18 (c), carry out making Copper Foil 62 become the figure of regulation, form desirable wiring figure 57 the etching processing of Copper Foil 62.In whole zone that should form wiring figure 57 of connecting portion and disconnected portion, carry out the formation of this wiring figure 57.Thereafter, as shown in Figure 18 (d), coating solder resist 8 on the wiring figure 57 of the part of having exposed when having carried semiconductor element 2 in the operation afterwards.Make band carrier 53 thus.

Secondly, similarly on band carrier 53, be connected with above-mentioned execution mode 1, semiconductor element mounted thereon 2.Then, after connecting on the band carrier 53, having carried semiconductor element 2, inject insulative resin 4 in the gap that between semiconductor element 2 and band carrier 53, constitutes and seal.Make the semiconductor device 51 of present embodiment thus.

Have again,, as shown in figure 17, on the outside terminal for connecting of wiring figure 57, for example connect liquid crystal panel 10 or printed base plate 11 etc. and get final product in that the electronic unit of above-mentioned semiconductor device 51 with other is connected to become under the situation of semiconductor module 59.

As mentioned above, in the band carrier 53 that the semiconductor device of COF type is in the present embodiment used, the thickness of the wiring figure 57 of connecting portion is than the thin thickness of the wiring figure 57 of disconnected portion.Particularly, the thickness of the wiring figure 57 of disconnected portion is 8～18 μ m, and the thickness of the wiring figure 57 of connecting portion is 3～6 μ m.

Thus, the band carrier of using with the semiconductor device of in the past COF type relatively can make the shape of the wiring figure 57 after the etching become well, and can make the connection status of wiring figure 57 and semiconductor element 2 become good.In addition, and compared in the past, also can improve the mechanical strength of the wiring figure 57 of disconnected portion comparably, can with because of the broken string of wiring figure 57 or peel off cause bad reduce to be lower than equal in the past 50%.

In addition, because have only the thickness attenuation of the wiring figure 57 of connecting portion, the thickness of the wiring figure 57 of disconnected portion is equal with the band carrier that the semiconductor device of COF type is in the past used, so it is compared with the past, can improve the mechanical strength of the wiring figure 57 of disconnected portion comparably, can further reduce because of the broken string of wiring figure 57 or peel off cause bad, the offset that takes place in the time of also can reducing with being connected of semiconductor element 2 simultaneously.

(execution mode 6)

If it is the 6th execution mode of the present invention is described, then as described below according to Figure 16, Figure 17 and Figure 19 (d).

Figure 16 is the profile that the schematic configuration of the semiconductor device relevant with present embodiment 51 is shown.In the present embodiment, compare with above-mentioned execution mode 5, the manufacture method difference of semiconductor device 51, the structure of semiconductor device 51 is identical.Therefore, attached for the member that in execution mode 5, has illustrated with prosign, omit its explanation.In addition, in the present embodiment, the manufacture method of semiconductor device 51 is described mainly.In addition, about the term that uses in the present embodiment, also supposition has the meaning same with above-mentioned execution mode 5.

At this, specifically describe the manufacture method of the semiconductor device 51 in the present embodiment according to Figure 19 (a)～Figure 19 (d).Figure 19 (a)～Figure 19 (d) is the profile of schematic configuration that the manufacture method of the semiconductor device 51 in the present embodiment is shown.The manufacture method of the semiconductor device 51 in the present embodiment is to be processed to form the wiring figure 57 back methods of the thickness of the Copper Foil that makes connecting portion than the thin thickness of the Copper Foil of disconnected portion that etch partially of utilizing by the Copper Foil that forms is carried out etching on insulating tape 6 surfaces.

At first, as shown in Figure 19 (a), utilize casting method or sputtering method (metalikon) etc. to form Copper Foil 62 on insulating tape 6 surfaces, making its thickness is 8～18 μ m.

Secondly, as shown in Figure 19 (b), carry out making Copper Foil 62 become the figure of regulation, form desirable wiring figure 57 the etching processing of Copper Foil 62.In whole zone that should form wiring figure 57 of connecting portion and disconnected portion, carry out the formation of this wiring figure 57.

Then, as shown in Figure 19 (c), etching processing is carried out on the surface of the wiring figure 57 of the part that is equivalent to connecting portion.Utilization etches partially carries out this etching processing.That is, so that the thickness of the wiring figure 57 of connecting portion carries out this etching processing than the mode of the thin thickness of the wiring figure 57 of disconnected portion.In addition, carry out this etching processing like this, make the length ratio of connecting portion grow about 40 μ m with the length of the projected electrode 5 of latter linked semiconductor element 2.

As Figure 19 (d) as shown in, the wiring figure 57 of the part when in afterwards operation having carried semiconductor element 2 exposed on apply solder resist thereafter.Make band carrier 53 thus.

Secondly, similarly on band carrier 53, be connected with above-mentioned execution mode 5, semiconductor element mounted thereon 2.Then, after connecting on the band carrier 53, having carried semiconductor element 2, inject insulative resin 4 in the gap that between semiconductor element 2 and band carrier 53, constitutes and seal.Make the semiconductor device 51 of present embodiment thus.

Have again, above-mentioned semiconductor device 51 is being connected under the situation that makes semiconductor module 59 with other electronic unit, as shown in Figure 17, on the outside terminal for connecting of wiring figure 57, for example connect liquid crystal panel 10 or printed base plate 11 etc. and get final product.

Thus, the band carrier of using with the semiconductor device of in the past COF type relatively can make the shape of the wiring figure 57 after the etching become well, and can make the connection status of wiring figure 57 and semiconductor element 2 become good.In addition, and compared in the past, also can improve the mechanical strength of the wiring figure 57 of disconnected portion comparably, can with because of the broken string of wiring figure 57 or peel off cause bad reduce to be lower than equal in the past 50%.Moreover, the offset that takes place in the time of can reducing with being connected of semiconductor element 2.

(execution mode 7)

If it is the 7th execution mode of the present invention is described, then as described below according to Figure 16, Figure 17 and Figure 20 (d).

Figure 16 is the profile that the schematic configuration of the semiconductor device relevant with present embodiment 51 is shown.The wiring figure 57 of the semiconductor device 51 of present embodiment is made of 2 layers (the 1st wiring layer and the 2nd wiring layers), compares with above-mentioned execution mode 5, and basic structure is identical.Therefore, attached for the member that in execution mode 5, has illustrated with prosign, omit its explanation.In addition, in the present embodiment, the manufacture method of semiconductor device 51 is described mainly.In addition, about the term that uses in the present embodiment, also supposition has the meaning same with above-mentioned execution mode 5.

Specifically describe the manufacture method of the semiconductor device 51 in the present embodiment according to Figure 20 (a)～Figure 20 (d).Figure 20 (a)～Figure 20 (d) is the profile of schematic configuration that the manufacture method of the semiconductor device 51 in the present embodiment is shown.The manufacture method of the semiconductor device 51 in the present embodiment is by utilize to electroplate waiting the thickness method thicker than the thickness of the Copper Foil of connecting portion of the Copper Foil that makes disconnected portion before being processed to form wiring figure 57 to carry out etching at the Copper Foil that forms on insulating tape 6 surfaces.

At first, as shown in Figure 20 (a), utilize casting method or sputtering method (metalikon) etc. to form the 1st copper foil layer 72 on insulating tape 6 surfaces, making its thickness is 3～6 μ m.Then, as shown in Figure 20 (b), on the 1st copper foil layer 72 of the part that is equivalent to disconnected portion, form the 2nd copper foil layer 73 again.The thickness that the 2nd copper foil layer 73 is formed the total of the 1st copper foil layer 72 and the 2nd copper foil layer 73 is 8～18 μ m.In addition, form the 2nd copper foil layer 73 like this, make the length ratio of connecting portion grow about 40 μ m with the length of the projected electrode 5 of latter linked semiconductor element 2.

Then, as shown in Figure 20 (c), carry out etching processing, make the 1st copper foil layer 72 and the 2nd copper foil layer 73 become the figure of regulation, form desirable wiring figure 57 the 1st copper foil layer 72 and the 2nd copper foil layer 73.Thus, form the wiring figure 57 that constitutes by the 1st wiring layer 57a and the 2nd wiring layer 57b.In whole zone that should form wiring figure 57 of connecting portion and disconnected portion, carry out the formation of this wiring figure 57.

Thereafter, as shown in Figure 20 (d), coating solder resist 8 on the wiring figure 57 of the part of having exposed when having carried semiconductor element 2 in the operation afterwards.Make band carrier 53 thus.

Have again, above-mentioned semiconductor device 51 is being connected under the situation that makes semiconductor module 59 with other electronic unit, as shown in Figure 17, on the outside terminal for connecting of wiring figure 57, for example connect liquid crystal panel 20 or printed base plate 11 etc. and get final product.

Thus, the band carrier of using with the semiconductor device of in the past COF type relatively can make the shape of the wiring figure 57 after the etching become well, and can make the connection status of wiring figure 57 and semiconductor element 2 become good.In addition, and compared in the past, also can improve the mechanical strength of the wiring figure 57 of disconnected portion comparably, can with because of the broken string of wiring figure 57 or peel off cause bad reduce to be lower than equal in the past 50%.And then, the offset that takes place in the time of also can reducing with being connected of semiconductor element 2.

(execution mode 8)

If it is the 8th execution mode of the present invention is described, then as described below according to Figure 16, Figure 17 and Figure 21 (d).

Specifically describe the manufacture method of the semiconductor device 51 in the present embodiment according to Figure 21 (a)～Figure 21 (d).Figure 21 (a)～Figure 21 (d) is the profile of schematic configuration that the manufacture method of the semiconductor device 51 in the present embodiment is shown.The manufacture method of the semiconductor device 51 in the present embodiment is utilize to electroplate to wait the thickness method thicker than the thickness of the Copper Foil of connecting portion of the Copper Foil that makes disconnected portion after being processed to form wiring figure 57 by the Copper Foil that forms is carried out etching on insulating tape 6 surfaces.

At first, as shown in Figure 21 (a), utilize casting method or sputtering method (metalikon) etc. to form the 1st copper foil layer 72 on insulating tape 6 surfaces, making its thickness is 3～6 μ m.

Then, as shown in Figure 21 (b), carry out etching processing, make the 1st copper foil layer 72 become the figure of regulation, form the 1st wiring layer 57a with desirable figure to the 1st copper foil layer 72.In whole zone that should form wiring figure 57 of connecting portion and disconnected portion, carry out the formation of the 1st wiring layer 57a.

Then, as shown in Figure 21 (c), on the 1st wiring layer 57a of the part that is equivalent to disconnected portion, pile up Copper Foil again and form the 2nd wiring layer 57b.Thus, form the 1st wiring layer 57a of the shape that is processed as desirable figure by being etched and the wiring figure 57 that the 2nd wiring layer 57b constitutes.For example utilize to electroplate the copper electrodeposited coating is separated out, form the 2nd wiring layer 57b on the 1st wiring layer 57a by being deposited in.The thickness that the 2nd wiring layer 57b is formed the total of the 1st wiring layer 57a and the 2nd wiring layer 57b is 8～18 μ m.In addition, form the 2nd copper foil layer 73 like this, make the length ratio of connecting portion grow about 40 μ m with the length of the projected electrode 5 of latter linked semiconductor element 2.

Thereafter, as shown in Figure 21 (d), coating solder resist 8 on the wiring figure 57 of the part of having exposed when having carried semiconductor element 2 in the operation afterwards.Make band carrier 53 thus.

Thus, the band carrier of using with the semiconductor device of in the past COF type relatively can make the shape of the wiring figure 57 after the etching become well, and can make the connection status of wiring figure 57 and semiconductor element 2 become good.In addition, and compared in the past, also can improve the mechanical strength of the wiring figure 57 of disconnected portion comparably, can with because of the broken string of wiring figure 57 or peel off cause bad reduce to be lower than equal in the past 50%.The offset that takes place in the time of also can reducing with being connected of semiconductor element 2.

Have, in the flexible printed circuit board relevant with the present invention, in the above-mentioned wiring layer, the thickness that carries the disconnected portion in the zone is preferably identical with the thickness of disconnected portion in the non-lift-launch zone again.According to above-mentioned structure,,,, also can prevent the broken string of figure or the generation of peeling off even the flexible printed circuit board bending is arrived at utmost so can further improve the mechanical strength of wiring layer because the thickness of disconnected portion in whole zones is identical.

In the flexible printed circuit board relevant with the present invention, under the situation of interval less than 35 μ m of the wiring of at least 1 group adjacency in above-mentioned figure, better effects if.According to above-mentioned structure, can realize the thin spaceization of the figure of wiring layer.

In the flexible printed circuit board relevant with the present invention, the thickness of the wiring layer in above-mentioned lift-launch zone or the connecting portion is preferably in the scope of 3～6 μ m.According to above-mentioned structure, even etching is carried the situation of the wiring in zone or the connecting portion, also can be etched into section is good shape.In addition, the thickness of each wiring that can reduce figure is discrete, can make the connection status with electronic unit become good.

In the flexible printed circuit board relevant with the present invention, the above-mentioned non-thickness of the wiring layer among zone or disconnected that carries is more preferably greater than equaling 8 μ m.According to above-mentioned structure,,, also can prevent the broken string of figure or the generation of peeling off even the flexible printed circuit board bending is arrived at utmost owing to can improve the mechanical strength of wiring layer.

In the flexible printed circuit board relevant with the present invention, above-mentioned connecting portion is an inner lead part.According to above-mentioned structure, in carrying the zone, have connecting portion, the connection status with electronic unit is become well, and can improve the mechanical strength of wiring layer.

In the flexible printed circuit board relevant with the present invention, above-mentioned electronic unit has the connecting elements that is connected usefulness with above-mentioned connecting portion, and the wiring layer in the above-mentioned connecting portion is preferably in has considered connecting portion and the interior attenuation of the scope of the tolerance of the manufacturing dimension that is connected precision and connecting elements of connecting elements.In addition, in above-mentioned connection precision be ± 15 μ m, the tolerance of the manufacturing dimension of above-mentioned connecting elements is ± situation of 10 μ m under, the wiring layer in the above-mentioned connecting portion is attenuation in the scope of the design length+40 μ m of connecting elements at least preferably.

According to above-mentioned structure, the thin zone of the wiring layer in the connecting portion becomes the scope of the tolerance of the manufacturing dimension of having considered connection precision and connecting elements.For example, in the tolerance that the connection precision to connecting portion of electronic unit is about the manufacturing dimension of 15 μ m, connecting elements be ± situation of 10 μ m under, the wiring layer in the connecting portion is attenuation in the scope of the design length+40 μ m of connecting elements at least.Thus, can not depart from the connecting elements of electronic unit under the situation of connecting portion and connect, can avoid becoming bad connection.Have, the so-called precision that connects is the precision of the offset when connecting connecting portion and connecting elements again.In addition, the tolerance of the manufacturing dimension of so-called connecting elements is the scope of the scale error that produces when making connecting elements.In addition, the design length of so-called connecting elements, the desired value (design load) when being the manufacturing of considering before the tolerance of manufacturing dimension, the size of having added and subtracted the tolerance of manufacturing dimension on design length is the actual product of finishing size.

In addition, in the manufacture method of the flexible printed circuit board relevant, be preferably between wiring layer formation operation and the figure formation operation and carry out above-mentioned thin layer chemical industry preface with the present invention.According to above-mentioned structure, at attenuate carry out figure behind wiring layer and coupling part electronic unit and form operation.In this case, owing to compare the thin layerization in big zone, so can under the situation of the method that service precision is not high, easily carry out thin layerization.

In the manufacture method of the flexible printed circuit board relevant, be preferably in figure formation operation and carry out above-mentioned thin layer chemical industry preface afterwards with the present invention.According to above-mentioned structure, owing to after figure forms operation, carry out thin layerization, so can reduce the dispersing of thickness of figure.

In the manufacture method of the flexible printed circuit board relevant, preferably use etching method to carry out above-mentioned thin layer chemical industry preface with the present invention.According to above-mentioned structure, can easily carry out the thin layerization of wiring layer.

In the manufacture method of the flexible printed circuit board relevant, be preferably in the 1st wiring layer and form above-mentioned the 2nd wiring layer formation of execution operation between operation and the figure formation operation with the present invention.According to above-mentioned structure, with the coupling part of electronic unit beyond the 1st wiring layer on formed the 2nd wiring layer after, carry out figure and form operation.In this case, owing to compare the formation of the 2nd wiring layer in big zone, so can under the situation of the method that service precision is not high, easily carry out the stacked of the 2nd wiring layer.

In the manufacture method of the flexible printed circuit board relevant, be preferably in figure formation operation and carry out above-mentioned the 2nd wiring layer formation operation afterwards with the present invention.According to above-mentioned structure, owing to after having formed figure, thicken wiring layer, so can reduce the dispersing of thickness of figure.

In the manufacture method of the flexible printed circuit board relevant, preferably use sputtering method (metalikon) to carry out above-mentioned the 2nd wiring layer and form operation with the present invention.According to above-mentioned structure, can easily make the thickness of the wiring layer beyond the coupling part of electronic unit thicker than the thickness of the wiring layer of coupling part.

In addition, because the flexible printed circuit board relevant with the present invention has above structure, so etching shape of the figure by making wiring layer or become with the connection status of electronic unit and well can realize miniaturization (thin spaceization), and can improve the mechanical strength of wiring layer, prevent bad connection, even and play figure broken string that when the bending flexible printed circuit board, also can prevent wiring layer or the effect of peeling off.

Have again, band carrier of the present invention is to be sealed to form insulating tape into the film of COF semiconductor device by the projected electrode that is electrically connected the wiring figure disposed many from the teeth outwards and semiconductor element and with insulative resin, connecting, the wire distribution distance of above-mentioned wiring figure in zone that carries above-mentioned semiconductor element is in the above-mentioned insulating tape less than 35 μ m, also can show as and is connected, the thickness that carries the above-mentioned wiring figure beyond the zone of above-mentioned semiconductor element is compared and is made connection, carry COF semiconductor device that the thickness attenuation ground of above-mentioned wiring figure in the zone of above-mentioned semiconductor element forms with the band carrier.In above-mentioned band carrier, the thickness of above-mentioned wiring figure that connects, carries the zone of above-mentioned semiconductor element can be formed 3～6 μ m.

In addition, the manufacture method of band carrier of the present invention also can show as at the thickness that utilizes pattern etching to utilize before forming above-mentioned wiring figure to etch partially the formation zone that makes thereafter the above-mentioned wiring figure that connects, carries above-mentioned semiconductor element and utilize pattern etching formation to comprise the method for above-mentioned wiring figure in other zone than other regional thin back.

In above-mentioned manufacture method, also can utilize pattern etching to utilize after forming above-mentioned wiring figure to etch partially the thickness of above-mentioned wiring figure that to connect, to carry the zone of above-mentioned semiconductor element thereafter to form thinlyyer than other the above-mentioned wiring figure in zone.

In addition, band carrier of the present invention is to be sealed to form insulating tape into the film of COF semiconductor device by the projected electrode that is electrically connected the wiring figure disposed many from the teeth outwards and semiconductor element and with insulative resin, connecting, the wire distribution distance of above-mentioned wiring figure in zone that carries above-mentioned semiconductor element is in the above-mentioned insulating tape less than 35 μ m, also can show as and is connected, the thickness of above-mentioned wiring figure that carries the zone of above-mentioned semiconductor element is compared and is made connection, the thickness that carries the zone above-mentioned wiring figure in addition of above-mentioned semiconductor element is thickeied the COF semiconductor device of ground formation with being with carrier.In above-mentioned band carrier, the thickness that connects, carries the zone above-mentioned wiring figure in addition of above-mentioned semiconductor element can be formed more than or equal to 8 μ m.

In addition, the manufacture method of band carrier of the present invention also can show as following method: before above-mentioned wiring figure is carried out pattern etching, after utilizing sputtering method (metalikon) than the formation zone heavy back of the above-mentioned wiring figure that connects, carries above-mentioned semiconductor element and having piled up above-mentioned wiring figure beyond the zone that connects, carries above-mentioned semiconductor element thereafter and form regional thickness, utilize pattern etching to form above-mentioned wiring figure.

In above-mentioned manufacture method, also can utilize after pattern etching formed above-mentioned wiring figure, the thickness of piling up the zone above-mentioned wiring figure in addition that connects, carries above-mentioned semiconductor element thereafter than the above-mentioned wiring figure heavy back that connects, carries above-mentioned semiconductor element forms.

The invention is not restricted to each above-mentioned execution mode, can carry out various changes in the scope that shows in the claims, even, be also contained in the technical scope of the present invention for suitably being combined in the technological means resulting execution mode that discloses respectively in the different execution modes.

As mentioned above, by using the manufacture method of the flexible printed circuit board relevant with the present invention, resulting flexible printed circuit board can be realized the thin spaceization of wiring figure, and can improve mechanical strength, can make with being electrically connected of semiconductor element and become good.Therefore, the flexible printed circuit board relevant with the present invention can be especially suitably as the wiring plate of the electronic equipment of having realized miniaturization, slimming etc.

Thereby the present invention not only can be used to make the industrial field of flexible printed circuit board suitably, and can be used to make the industrial field of various electronics, electric equipment or its parts suitably.

In embodiment described in the project of detailed description of the invention or embodiment is in order to make technology contents of the present invention become clear after all, should only not be defined in such concrete example and carry out the explanation of narrow sense ground, in the scope of the claim of spirit of the present invention and following record, can do various changes and implement.

Claims

1. flexible printed circuit board, the wiring layer that possesses insulating barrier and form on this insulating barrier is characterized in that:

Above-mentioned wiring layer is formed the figure of regulation, and has the connecting portion that is connected usefulness with this electronic unit in the lift-launch zone of connection and lift-launch electronic unit,

The thickness of wiring layer that has only above-mentioned connecting portion is than the thin thickness of the wiring layer in disconnected.

2. the flexible printed circuit board described in claim 1 is characterized in that:

The thickness of the disconnected portion in the thickness of the disconnected portion in the lift-launch zone of above-mentioned wiring layer and the non-lift-launch zone is identical.

3. the flexible printed circuit board described in claim 1 is characterized in that:

The interval of the wiring of at least 1 group adjacency in the above-mentioned figure is less than 35 μ m.

4. the flexible printed circuit board described in claim 1 is characterized in that:

The thickness of the wiring layer in the above-mentioned connecting portion is in the scope of 3～6 μ m.

5. the flexible printed circuit board described in claim 1 is characterized in that:

The thickness of the wiring layer in above-mentioned disconnected is more than or equal to 8 μ m.

6. want the flexible printed circuit board described in 1 as right, it is characterized in that:

Above-mentioned connecting portion is an inner lead part.

7. the flexible printed circuit board described in claim 1 is characterized in that:

Above-mentioned electronic unit has the connecting elements that is connected usefulness with above-mentioned connecting portion,

Wiring layer in the above-mentioned connecting portion is attenuate in having considered the scope of connecting portion and the tolerance of the manufacturing dimension that is connected precision and connecting elements of connecting elements.

8. the flexible printed circuit board described in claim 7 is characterized in that:

In above-mentioned connection precision be ± 15 μ m, the tolerance of the manufacturing dimension of above-mentioned connecting elements is ± situation of 10 μ m under, the wiring layer in the above-mentioned connecting portion is attenuate in the scope of the design length+40 μ m of connecting elements at least.

9. semiconductor device is characterized in that:

Possess the flexible printed circuit board described in the claim 1 and be connected to semiconductor element on the connecting portion of flexible printed circuit board.

10. electronic equipment is characterized in that:

Possesses the semiconductor device described in the claim 9.