CN100536089C - 晶圆快速冷却退火的方法和装置 - Google Patents
晶圆快速冷却退火的方法和装置 Download PDFInfo
- Publication number
- CN100536089C CN100536089C CNB200310122958XA CN200310122958A CN100536089C CN 100536089 C CN100536089 C CN 100536089C CN B200310122958X A CNB200310122958X A CN B200310122958XA CN 200310122958 A CN200310122958 A CN 200310122958A CN 100536089 C CN100536089 C CN 100536089C
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- temperature
- semiconductor substrate
- gas
- annealing
- temperature value
- Prior art date
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- Expired - Fee Related
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- 238000000137 annealing Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000001816 cooling Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 238000010438 heat treatment Methods 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims description 83
- 239000007789 gas Substances 0.000 claims description 77
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 239000001307 helium Substances 0.000 claims description 7
- 229910052734 helium Inorganic materials 0.000 claims description 7
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 61
- 238000004519 manufacturing process Methods 0.000 description 14
- 230000008569 process Effects 0.000 description 12
- 230000008859 change Effects 0.000 description 10
- 230000004048 modification Effects 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000004151 rapid thermal annealing Methods 0.000 description 3
- BIIBYWQGRFWQKM-JVVROLKMSA-N (2S)-N-[4-(cyclopropylamino)-3,4-dioxo-1-[(3S)-2-oxopyrrolidin-3-yl]butan-2-yl]-2-[[(E)-3-(2,4-dichlorophenyl)prop-2-enoyl]amino]-4,4-dimethylpentanamide Chemical compound CC(C)(C)C[C@@H](C(NC(C[C@H](CCN1)C1=O)C(C(NC1CC1)=O)=O)=O)NC(/C=C/C(C=CC(Cl)=C1)=C1Cl)=O BIIBYWQGRFWQKM-JVVROLKMSA-N 0.000 description 2
- OUXCBPLFCPMLQZ-WOPPDYDQSA-N 4-amino-1-[(2r,3s,4s,5r)-4-hydroxy-5-(hydroxymethyl)-3-methyloxolan-2-yl]-5-iodopyrimidin-2-one Chemical compound C[C@H]1[C@H](O)[C@@H](CO)O[C@H]1N1C(=O)N=C(N)C(I)=C1 OUXCBPLFCPMLQZ-WOPPDYDQSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000013139 quantization Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (16)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200310122958XA CN100536089C (zh) | 2003-12-30 | 2003-12-30 | 晶圆快速冷却退火的方法和装置 |
US10/773,517 US7241672B2 (en) | 2003-12-30 | 2004-02-06 | Method and apparatus for rapid cooldown of annealed wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB200310122958XA CN100536089C (zh) | 2003-12-30 | 2003-12-30 | 晶圆快速冷却退火的方法和装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1635615A CN1635615A (zh) | 2005-07-06 |
CN100536089C true CN100536089C (zh) | 2009-09-02 |
Family
ID=34683164
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200310122958XA Expired - Fee Related CN100536089C (zh) | 2003-12-30 | 2003-12-30 | 晶圆快速冷却退火的方法和装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7241672B2 (zh) |
CN (1) | CN100536089C (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102560025B (zh) * | 2010-12-27 | 2015-06-24 | 无锡华润上华科技有限公司 | 快速热退火方法 |
US8828831B2 (en) * | 2012-01-23 | 2014-09-09 | International Business Machines Corporation | Epitaxial replacement of a raised source/drain |
CN102645102B (zh) * | 2012-05-04 | 2014-06-04 | 上海华力微电子有限公司 | 冷却系统及具该系统的热退火炉管和冷却方法 |
US10032876B2 (en) | 2014-03-13 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact silicide having a non-angular profile |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4802441A (en) * | 1987-01-08 | 1989-02-07 | Btu Engineering Corporation | Double wall fast cool-down furnace |
JP3852980B2 (ja) * | 1996-05-21 | 2006-12-06 | キヤノンアネルバ株式会社 | 薄膜作成方法及びスパッタリング装置 |
JP4540796B2 (ja) * | 2000-04-21 | 2010-09-08 | 東京エレクトロン株式会社 | 石英ウインドウ、リフレクタ及び熱処理装置 |
JP2002353445A (ja) * | 2001-05-30 | 2002-12-06 | Sony Corp | 溝ゲート型電界効果トランジスタの製造方法 |
-
2003
- 2003-12-30 CN CNB200310122958XA patent/CN100536089C/zh not_active Expired - Fee Related
-
2004
- 2004-02-06 US US10/773,517 patent/US7241672B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1635615A (zh) | 2005-07-06 |
US20050142868A1 (en) | 2005-06-30 |
US7241672B2 (en) | 2007-07-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111202 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20111202 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090902 Termination date: 20181230 |