CN100530712C - 发光二极管结构 - Google Patents
发光二极管结构 Download PDFInfo
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- CN100530712C CN100530712C CNB2005800320136A CN200580032013A CN100530712C CN 100530712 C CN100530712 C CN 100530712C CN B2005800320136 A CNB2005800320136 A CN B2005800320136A CN 200580032013 A CN200580032013 A CN 200580032013A CN 100530712 C CN100530712 C CN 100530712C
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- emitting diode
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- 239000010410 layer Substances 0.000 claims abstract description 106
- 239000013079 quasicrystal Substances 0.000 claims abstract description 93
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
项目 | 组成 | 厚度 | 说明 |
1001 | GaAs | 400mm | 基板和缓冲器 |
1002 | 氧化的Al<sub>0.98</sub>Ga<sub>0.02</sub>As | 120nm | 多层叠置的底部 |
1003 | GaAs | 88nm | |
1004 | 氧化的Al<sub>0.98</sub>Ga<sub>0.02</sub>As | 120nm | DBR叠置的第二段(period) |
1005 | GaAs | 88nm | |
1006 | 氧化的Al<sub>0.98</sub>Ga<sub>0.02</sub>As | 120nm | DBR叠置的第三段 |
1007 | GaAs | 88nm | |
1008 | Al<sub>0.98</sub>Ga<sub>0.02</sub>As | 120nm | 多层叠置的顶部 |
1009 | n型掺杂的GaAs | 78nm | 下部GRIN-SCH结构 |
1010 | n型掺杂的Al<sub>0.9</sub>Ga<sub>0.1</sub>As | 20nm | 下部GRIN-SCH结构 |
1011 | Al<sub>0.5</sub>Ga<sub>0.5</sub>As | 20nm | 下部GRIN-SCH结构 |
1012 | Al<sub>0.1</sub>Ga<sub>0.9</sub>As | 15nm | 下部GRIN-SCH结构 |
1013 | GaAs | 10nm | 下部GRIN-SCH结构 |
1014 | In<sub>0.04</sub>Ga<sub>0.96</sub>As | 7.5nm | 适合发射960nm至970nm的量子阱 |
1015 | GaAs | 10nm | 上部GRIN-SCH结构 |
1016 | Al<sub>0.1</sub>Ga<sub>0.9</sub>As | 15nm | 上部GRIN-SCH结构 |
1017 | Al<sub>0.5</sub>Ga<sub>0.5</sub>As | 20nm | 上部GRIN-SCH结构 |
1018 | p型掺杂的Al<sub>0.9</sub>Ga<sub>0.1</sub>As | 20nm | 上部GRIN-SCH结构 |
1019 | p型掺杂的GaAs | 78nm | 上部GRIN-SCH结构 |
1020 | 空气 | ||
1021 | p电极 | ||
1022 | n电极 |
项目 | 组成 | 厚度 |
1101 | p型接触 | |
1102 | p型掺杂的材料 | 200nm |
1103 | 光子准晶体排列 | 最邻近的柱之间的间距约为350nm |
1104 | n型接触 | |
1105 | DBR镜像(mirror)多层叠置 | 5×(208nm) |
1106 | 空气柱/填充柱 | 蚀刻深度约为200nm |
1107 | p型掺杂的材料 | 78nm |
1108 | 有源层 | 140nm |
1109 | n型掺杂的材料 | 78nm |
1110 | p型接触 | |
1111 | p型掺杂的材料 | 200nm |
1112 | DBR镜像多层叠置 | 5×(208nm) |
1113 | N型接触 | |
1114 | n型掺杂的材料 | 78nm |
1115 | 基板 | 400nm |
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/946,747 | 2004-09-22 | ||
US10/946,747 US7509012B2 (en) | 2004-09-22 | 2004-09-22 | Light emitting diode structures |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101027782A CN101027782A (zh) | 2007-08-29 |
CN100530712C true CN100530712C (zh) | 2009-08-19 |
Family
ID=34956674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800320136A Active CN100530712C (zh) | 2004-09-22 | 2005-09-20 | 发光二极管结构 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7509012B2 (zh) |
EP (1) | EP1805808B1 (zh) |
JP (1) | JP2008513988A (zh) |
CN (1) | CN100530712C (zh) |
TW (1) | TWI336959B (zh) |
WO (1) | WO2006032865A1 (zh) |
Families Citing this family (40)
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US7833802B2 (en) * | 2002-11-21 | 2010-11-16 | Ada Technologies, Inc. | Stroboscopic liberation and methods of use |
US7509012B2 (en) * | 2004-09-22 | 2009-03-24 | Luxtaltek Corporation | Light emitting diode structures |
US7277609B2 (en) * | 2004-11-05 | 2007-10-02 | Optical Research Associates | Methods for manipulating light extraction from a light guide |
US8377711B2 (en) * | 2005-04-04 | 2013-02-19 | Ada Technologies, Inc. | Stroboscopic liberation and methods of use |
WO2007030458A2 (en) * | 2005-09-06 | 2007-03-15 | Trustees Of Boston University | Enhancement of light emission efficiency by tunable surface plasmons |
US20070280593A1 (en) * | 2005-11-04 | 2007-12-06 | Optical Research Associates | High contrast edge-lit signs and images |
KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
US20080231184A1 (en) * | 2006-06-19 | 2008-09-25 | Iowa State University Research Foundation, Inc. | Higher efficiency incandescent lighting using photon recycling |
JP5186093B2 (ja) * | 2006-09-26 | 2013-04-17 | スタンレー電気株式会社 | 半導体発光デバイス |
US7700962B2 (en) * | 2006-11-28 | 2010-04-20 | Luxtaltek Corporation | Inverted-pyramidal photonic crystal light emitting device |
US7615398B2 (en) * | 2006-11-28 | 2009-11-10 | Luxtaltek Corporation | Pyramidal photonic crystal light emitting device |
TWI342629B (en) * | 2006-11-28 | 2011-05-21 | Pyramidal photonic crystal light emitting device | |
TWI460881B (zh) | 2006-12-11 | 2014-11-11 | Univ California | 透明發光二極體 |
DE102007003785A1 (de) * | 2007-01-19 | 2008-07-24 | Merck Patent Gmbh | Emitter-converter-chip |
WO2008092118A2 (en) | 2007-01-25 | 2008-07-31 | Ada Technologies, Inc. | Stroboscopic signal amplification and surface enhanced raman spectroscopy |
JP4928321B2 (ja) * | 2007-03-26 | 2012-05-09 | 独立行政法人科学技術振興機構 | 発光素子 |
US20090015142A1 (en) * | 2007-07-13 | 2009-01-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display devices |
US8179034B2 (en) * | 2007-07-13 | 2012-05-15 | 3M Innovative Properties Company | Light extraction film for organic light emitting diode display and lighting devices |
TW200910648A (en) | 2007-08-31 | 2009-03-01 | Isotech Products Inc | Forming process of resin lens of an LED component |
US20090108277A1 (en) * | 2007-10-29 | 2009-04-30 | Genesis Photonics Inc. | Periodically structured substrate and light emitting device including the same |
JP4995053B2 (ja) * | 2007-12-04 | 2012-08-08 | パナソニック株式会社 | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
WO2009081314A1 (en) * | 2007-12-18 | 2009-07-02 | Koninklijke Philips Electronics N.V. | Photonic crystal led |
WO2009081325A1 (en) * | 2007-12-18 | 2009-07-02 | Koninklijke Philips Electronics N.V. | Light emitting diode |
US8415691B2 (en) * | 2008-08-18 | 2013-04-09 | Tsmc Solid State Lighting Ltd. | Omnidirectional reflector |
DE102008045028B4 (de) * | 2008-08-29 | 2023-03-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
US20100110551A1 (en) * | 2008-10-31 | 2010-05-06 | 3M Innovative Properties Company | Light extraction film with high index backfill layer and passivation layer |
US7762704B2 (en) * | 2008-11-19 | 2010-07-27 | Bryter Technologies LLC | Optimized distribution of light extraction from an edge lit light source |
US7957621B2 (en) * | 2008-12-17 | 2011-06-07 | 3M Innovative Properties Company | Light extraction film with nanoparticle coatings |
JP2012530945A (ja) | 2009-06-22 | 2012-12-06 | トラスティーズ オブ プリンストン ユニバーシティ | 完全なフォトニック、電子又はフォノニックバンドギャップを有する非結晶材料 |
US8685767B2 (en) * | 2009-12-08 | 2014-04-01 | Lehigh University | Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes |
US8538224B2 (en) | 2010-04-22 | 2013-09-17 | 3M Innovative Properties Company | OLED light extraction films having internal nanostructures and external microstructures |
GB201015417D0 (en) * | 2010-09-15 | 2010-10-27 | Lomox Ltd | Organic light emitting diode devices |
CN101969092B (zh) * | 2010-09-16 | 2014-03-26 | 兰红波 | 垂直结构金属衬底准光子晶体hb-led芯片及其制造方法 |
US8742406B1 (en) | 2011-02-16 | 2014-06-03 | Iowa State University Research Foundation, Inc. | Soft lithography microlens fabrication and array for enhanced light extraction from organic light emitting diodes (OLEDs) |
US11852781B2 (en) | 2011-10-14 | 2023-12-26 | The Trustees Of Princeton University | Narrow-band frequency filters and splitters, photonic sensors, and cavities having pre-selected cavity modes |
GB201309601D0 (en) * | 2013-05-29 | 2013-07-10 | Lomox Ltd | Organic light emitting diode structure |
JP6107553B2 (ja) * | 2013-09-06 | 2017-04-05 | 豊田合成株式会社 | Led発光装置 |
FR3063151B1 (fr) * | 2017-02-20 | 2019-04-19 | Stmicroelectronics (Crolles 2) Sas | Dispositif de couplage optique a large bande passante et a pertes de puissance reduites |
US11024775B2 (en) | 2017-10-17 | 2021-06-01 | Lumileds Llc | LED emitters with integrated nano-photonic structures to enhance EQE |
CN113488573B (zh) * | 2021-06-04 | 2022-07-26 | 北京大学 | 一种用非晶光子结构提高led封装器件出光效率的制备方法 |
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US7509012B2 (en) * | 2004-09-22 | 2009-03-24 | Luxtaltek Corporation | Light emitting diode structures |
-
2004
- 2004-09-22 US US10/946,747 patent/US7509012B2/en active Active
-
2005
- 2005-09-20 CN CNB2005800320136A patent/CN100530712C/zh active Active
- 2005-09-20 WO PCT/GB2005/003616 patent/WO2006032865A1/en active Application Filing
- 2005-09-20 JP JP2007531837A patent/JP2008513988A/ja active Pending
- 2005-09-20 EP EP05784753.5A patent/EP1805808B1/en active Active
- 2005-09-21 TW TW094132635A patent/TWI336959B/zh active
-
2008
- 2008-12-29 US US12/344,935 patent/US7672548B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2006032865A1 (en) | 2006-03-30 |
US20060062540A1 (en) | 2006-03-23 |
EP1805808B1 (en) | 2017-05-31 |
TWI336959B (en) | 2011-02-01 |
US7672548B2 (en) | 2010-03-02 |
TW200629598A (en) | 2006-08-16 |
JP2008513988A (ja) | 2008-05-01 |
CN101027782A (zh) | 2007-08-29 |
US7509012B2 (en) | 2009-03-24 |
EP1805808A1 (en) | 2007-07-11 |
US20090101931A1 (en) | 2009-04-23 |
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