US8685767B2 - Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes - Google Patents
Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes Download PDFInfo
- Publication number
- US8685767B2 US8685767B2 US12/963,117 US96311710A US8685767B2 US 8685767 B2 US8685767 B2 US 8685767B2 US 96311710 A US96311710 A US 96311710A US 8685767 B2 US8685767 B2 US 8685767B2
- Authority
- US
- United States
- Prior art keywords
- surface plasmon
- thickness
- metallic
- layers
- ingan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related, expires
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
Definitions
- III-Nitride semiconductors have significant applications for solid state lighting and lasers, power electronics, thermoelectricity, and solar cell applications.
- InGaN quantum wells (QWs) have been widely employed as an active region in nitride light-emitting diodes (LEDs) for solid state lighting application.
- the internal quantum efficiency in InGaN QWs LEDs is limited by: 1) high dislocation density leading to large non-radiative recombination rate, and 2) charge separation due to the existence of the electrostatic field in the QW leading to significant reduction of the radiative recombination rate.
- Another approach to enhance the radiative recombination rate and internal quantum efficiency of InGaN QWs active region is by employing surface-plasmon (SP) based LEDs. Since the InGaN QWs are coupled to surface plasmon mode at the interface of metallic film and semiconductor, the radiative recombination rate in the QWs can be enhanced due to the increased photon density of states near the surface plasmon frequency resulting from Purcell effect enhancement factor. The peak Purcell enhancement factor occurs at the surface plasmon frequency of a structure. Recent experiments have reported significant Purcell enhancement factor for InGaN/GaN QW by using a single Ag metallic layer, leading to an increase in internal quantum efficiency and radiative recombination rate.
- SP surface-plasmon
- Another recent approach based on metallo-dielectric stacked structures, proposes “tuning” the surface plasmon frequency by using one or more metal layers each spaced apart by a dielectric layer. Tuning can be accomplished by changing the combination of dielectric and metallic material as well as the thickness of the dielectric spacer layer.
- the Purcell enhancement factor based on this approach becomes reduced for the frequency regimes away from the surface plasmon frequency of the particular metal in use.
- the metallo-dielectric approach also requires complex processing for hybrid deposition of both dielectric and metallic layers, since the deposition environment for the metal is different than the deposition environment of the dielectric.
- a double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate.
- the surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon.
- the amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers.
- a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.
- QWs quantum wells
- This tunes the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes (LEDs).
- the dispersion relation is calculated by using a transfer matrix method.
- the Purcell peak enhancement factor is widely tuned between the surface plasmon frequencies of Au/GaN ( ⁇ sp — Au ) and Ag/GaN ( ⁇ sp — Au ). This approach can be widely applied for different combinations of double-metallic layers with varied surface plasmon resonant frequency.
- FIG. 1 illustrates a surface plasmon (SP) dispersion curves of thin Ag (Au) film on GaN substrate with Ag (Au) film thicknesses of 40, 10, and 5 nm;
- FIG. 2 illustrates (a) Surface plasmon dispersion curves and (b) Purcell factor as a function of energy for double-metallic Au/Ag layers on GaN substrate with Au/Ag layer thicknesses of 10 nm/10 nm, 5 nm/15 nm, 3 nm/17 nm, and 1 nm/19 nm.
- FIG. 3 illustrate electric fields for double-metallic (a) Au (3 nm)/Ag (17 nm) and (b) Ag (3 nm)/Au (17 nm) layers on a InGaN/GaN substrate; and
- FIG. 4 illustrates (a) photoluminescence (PL) spectra comparison of InGaN QWs coated with 50-nm silver and control sample (with no metal coating), and (b) the enhancement ratios of PL intensities of the InGaN QWs with metal coating and without metal coating as a function of the wavelength for various double-metallic Au/Ag layers thicknesses.
- PL photoluminescence
- This invention presents a novel approach to achieve wide-spectrum tuning of the surface plasmon resonant frequency for III-Nitride photonics devices by employing double-metallic layers, comprising different adjacent metals, on GaN.
- the use of double metallic Au/Ag layers enables tuning with the green spectrum regime for LEDs.
- FIG. 1 shows the surface plasmon dispersion curves (energy versus wave vector) of a single thin Ag (or Au) film on a GaN substrate as a function of the Ag (or Au) thicknesses of 40 nm, 10 nm, and 5 nm.
- FIG. 2( a ) shows the surface plasmon dispersion curves of thin double metallic Au/Ag layers on a GaN substrate with Au/Ag layer thicknesses of 0 nm/20 nm (i.e., Ag-only), 10 nm/10 nm, 5 nm/15 nm, 3 nm/17 nm, 1 nm/19 nm, and 20 nm/0 nm (i.e., Au-only).
- the dispersion curve can be engineered with different surface plasmon frequencies between ⁇ sp — Ag and ⁇ sp — Au .
- FIG. 2( b ) plots the Purcell factor as a function of energy for thin Au/Ag layers on a GaN substrate with Au/Ag layer thickness of 0 nm/20 nm (Ag-only), and 10 nm/10 nm, 5 nm/15 nm, 3 nm/17 nm, 1 nm/19 nm, and 20 nm/0 nm (Au-only).
- FIG. 2( b ) indicates that the Purcell enhancement factor can be tuned between the surface plasmon frequencies of Ag/GaN ( ⁇ sp — Ag ) and Au/GaN ( ⁇ sp — Au ) without decreasing the Purcell factor.
- the ratio of the thickness of the double metallic Au/Ag film determines the surface plasmon resonant frequency.
- FIGS. 3( a ) and 3 ( b ) show the electric field for the double-metallic layers of Au (3 nm)/Ag (17 nm) and Ag (3 nm)/Au (17 nm) on InGaN/GaN, respectively.
- PL measurements were performed by exciting the InGaN QWs with a 410 nm InGaN diode laser from the bottom of the substrate as shown in the inset of FIG. 4( a ).
- a silicon photo-detector was used to collect the emission from the sample.
- PL measurements were performed for InGaN QWs deposited with different metallic layers as follows: 1) 50-nm Ag, 2) 4-nm Au/46-nm Ag, 3) 8-nm Au/42-nm Ag, 4) 12-nm Au/38-nm Ag, and 5) 50-nm Ag.
- the PL measurements for these samples were compared with the corresponding control InGaN QWs without metal deposition.
- FIG. 4( a ) shows the PL spectrum for the InGaN/GaN QWs coated with 50-nm silver, which is compared with the control InGaN QW sample without metal coating. From FIG. 4( a ), significant PL intensity enhancement is observed by depositing Ag on top of InGaN/GaN QWs at peak emission wavelength of 480 nm.
- FIG. 4( b ) plots the enhancement ratios of PL intensities of the InGaN QWs with metal coating and without metal coating as a function of the wavelength.
- the Ag-coated InGaN QW sample shows larger enhancement at shorter wavelength due to the higher surface plasmon frequency.
- the peak enhancement ratio shifts to the longer wavelength region as shown in FIG. 4( b ).
- the Au-coated InGaN QWs shows the minimum enhancement ratio between 1.1-1.6, which is due to the reflection from the Au layer.
- the use of double-metallic layers (comprising the different metal layers) on top of a semiconductor presents a novel approach to tuning the surface plasmon frequency between the two individual surface plasmon frequencies of the metals on top of the semiconductor.
- the Purcell enhancement factor for Au/Ag with varied thickness ratios on GaN shows that the tuning of the surface plasmon frequency without the decrease of the Purcell enhancement factor is achieved.
- the concept of tuning of the surface plasmon frequency using double-metallic Au/Ag layers deposited on top of GaN can be extended with other metallic layers on GaN to tune to other SP frequencies including from UV up to the red spectral regime, from about 200 nm up to 100 micron.
- This novel approach realizes surface plasmon based LEDs with significantly enhanced radiative recombination rate and radiative efficiency for a wide frequency range in the visible spectral regime.
Landscapes
- Led Devices (AREA)
Abstract
A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers. In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate.
Description
This application claims priority to U.S. Provisional Application No. 61/267,529, filed Dec. 8, 2009, the entire contents of which are hereby incorporated fully by reference.
This invention was made with government support under US Department of Energy (DE-FC26-08NT01581) and US National Science Foundation (ECCS #0701421). The government has certain rights in the invention.
III-Nitride semiconductors have significant applications for solid state lighting and lasers, power electronics, thermoelectricity, and solar cell applications. InGaN quantum wells (QWs) have been widely employed as an active region in nitride light-emitting diodes (LEDs) for solid state lighting application. The internal quantum efficiency in InGaN QWs LEDs is limited by: 1) high dislocation density leading to large non-radiative recombination rate, and 2) charge separation due to the existence of the electrostatic field in the QW leading to significant reduction of the radiative recombination rate. The detrimental effects become more severe for InGaN QWs, in particular as the emission wavelength is extended into the green or yellow spectral regimes Several approaches have been demonstrated to suppress the charge separation issue by employing novel QWs with improved electron-hole wave function overlap (Γe — hh) such as 1) nonpolar InGaN QWs, 2) staggered InGaN QW, 3) InGaN QW with δ-AlGaN layer, 4) type-II InGaN-based QW, 5) strain-compensated InGaN—AlGaN QW, and InGaN-delta-InN QW.
Another approach to enhance the radiative recombination rate and internal quantum efficiency of InGaN QWs active region is by employing surface-plasmon (SP) based LEDs. Since the InGaN QWs are coupled to surface plasmon mode at the interface of metallic film and semiconductor, the radiative recombination rate in the QWs can be enhanced due to the increased photon density of states near the surface plasmon frequency resulting from Purcell effect enhancement factor. The peak Purcell enhancement factor occurs at the surface plasmon frequency of a structure. Recent experiments have reported significant Purcell enhancement factor for InGaN/GaN QW by using a single Ag metallic layer, leading to an increase in internal quantum efficiency and radiative recombination rate. The use of a single metallic layer leads to strong enhancement near the surface plasmon frequencies, and the enhancement will reduce for frequencies further away from the surface plasmon resonant frequency. A problem exists, however, in that no enhancement is obtained for frequencies above the surface plasmon frequency of the single metallic layer structure.
Another recent approach, based on metallo-dielectric stacked structures, proposes “tuning” the surface plasmon frequency by using one or more metal layers each spaced apart by a dielectric layer. Tuning can be accomplished by changing the combination of dielectric and metallic material as well as the thickness of the dielectric spacer layer. However, the Purcell enhancement factor based on this approach becomes reduced for the frequency regimes away from the surface plasmon frequency of the particular metal in use. The metallo-dielectric approach also requires complex processing for hybrid deposition of both dielectric and metallic layers, since the deposition environment for the metal is different than the deposition environment of the dielectric.
A double-metallic deposition process is used whereby adjacent layers of different metals are deposited on a substrate. The surface plasmon frequency of a base layer of a first metal is tuned by the surface plasmon frequency of a second layer of a second metal formed thereon. The amount of tuning is dependent upon the thickness of the metallic layers, and thus tuning can be achieved by varying the thicknesses of one or both of the metallic layers.
In a preferred embodiment directed to enhanced LED technology in the green spectrum regime, a double-metallic Au/Ag layer comprising a base layer of gold (Au) followed by a second layer of silver (Ag) formed thereon is deposited on top of InGaN/GaN quantum wells (QWs) on a sapphire/GaN substrate. This tunes the Purcell peak enhancement of the spontaneous recombination rate for nitride light-emitting diodes (LEDs). The dispersion relation is calculated by using a transfer matrix method. By modifying the ratio of the double-metallic layer (Au/Ag) thickness, the Purcell peak enhancement factor is widely tuned between the surface plasmon frequencies of Au/GaN (ωsp — Au) and Ag/GaN (ωsp — Au). This approach can be widely applied for different combinations of double-metallic layers with varied surface plasmon resonant frequency.
This invention presents a novel approach to achieve wide-spectrum tuning of the surface plasmon resonant frequency for III-Nitride photonics devices by employing double-metallic layers, comprising different adjacent metals, on GaN. In a preferred embodiment described in more detail below, the use of double metallic Au/Ag layers enables the tuning of the surface plasmon frequency over a large frequency range between the surface plasmon frequencies of the individual metals (Esp- — Ag=ℏωsp — Ag and Esp — Au=ℏωsp — Au), while maintaining a large Purcell enhancement factor throughout the frequency range. The use of double metallic Au/Ag layers enables tuning with the green spectrum regime for LEDs. The use of double-metallic layers also offers a practical and easy approach to device implementation. Photoluminescence (PL) studies were carried out to provide the proof-of-concept experimental demonstration of the Purcell peak enhancement factor by using double-metallic Au/Ag layers coupled with the InGaN/GaN QWs.
The use of double-metallic layers (Au/Ag) with optimized thicknesses allows the tuning of the Purcell enhancement factor between the surface plasmon frequencies of Ag/GaN (ωsp — Ag) and Au/GaN (ωsp — Au). By varying the thickness combination of Au (dAu) and Ag (dAg) layers, the double-metallic layers can be used to achieve large Purcell enhancement for SP-based InGaN QW LEDs. FIG. 2( a) shows the surface plasmon dispersion curves of thin double metallic Au/Ag layers on a GaN substrate with Au/Ag layer thicknesses of 0 nm/20 nm (i.e., Ag-only), 10 nm/10 nm, 5 nm/15 nm, 3 nm/17 nm, 1 nm/19 nm, and 20 nm/0 nm (i.e., Au-only). Note that the total thickness of the double metallic layers is constant (dtotal=20 nm) in this analysis which is done for comparison purposes only (i.e., the total thickness of the double metallic layers can be variable and will still fall within the scope of the claimed invention). By modifying the ratio of the Au and Ag thicknesses, the dispersion curve can be engineered with different surface plasmon frequencies between ωsp — Ag and ωsp — Au.
Note that the sequence of the double-metallic layers is important for ensuring wide tuning of the Purcell factor. To better illustrate the effect of the sequence of the double-metallic layers on the coupling between the QW and the surface plasmon electric field, FIGS. 3( a) and 3(b) show the electric field for the double-metallic layers of Au (3 nm)/Ag (17 nm) and Ag (3 nm)/Au (17 nm) on InGaN/GaN, respectively. By comparing FIGS. 3( a) and 3(b), it can be seen that the surface plasmon electric field of Au/Ag double-metallic layers is strongly coupled to the InGaN QW active region while the surface plasmon electric field of Ag/Au double-metallic layers shows almost no coupling to the InGaN QW. From FIG. 3( a), it can be seen that the surface plasmon electric field interacts with both Au and Ag films, which results in an average surface plasmon resonant energy of Au/GaN and Ag/GaN.
Experimental studies were conducted by the Applicant herein to demonstrate the concept of the surface plasmon frequency tuning using the double-metallic layers on InGaN/GaN QWs. Conventional 4-period InGaN QWs emitting at peak wavelength of 465 nm were grown by metal organic chemical vapor deposition (MOCVD) on u-GaN (3 μm)/sapphire substrate (double side polished). On top of the fourth InGaN QW, a GaN spacer layer thickness was 10 nm. Metals with total thickness of 50 nm were evaporated on top of the InGaN/GaN QWs by thermal evaporation. PL measurements were performed by exciting the InGaN QWs with a 410 nm InGaN diode laser from the bottom of the substrate as shown in the inset of FIG. 4( a). A silicon photo-detector was used to collect the emission from the sample. PL measurements were performed for InGaN QWs deposited with different metallic layers as follows: 1) 50-nm Ag, 2) 4-nm Au/46-nm Ag, 3) 8-nm Au/42-nm Ag, 4) 12-nm Au/38-nm Ag, and 5) 50-nm Ag. The PL measurements for these samples were compared with the corresponding control InGaN QWs without metal deposition.
The results shown in FIG. 4( b) clearly indicate that the use of an Ag-only surface plasmon structure resulted in an enhancement factor with decreasing value as the wavelength is away from the surface plasmon frequency. However, the use of Au/Ag double metallic layer structure leads to an increase in the Purcell enhancement factor for emission wavelengths between the two surface plasmon frequencies, with enhancement up to 7-times in the green spectral regime. Strong enhancement in the internal quantum efficiency for green-emitting InGaN QWs is of great interest, in particular since InGaN QWs LEDs suffer from significant charge separation in this wavelength regime.
In summary, the use of double-metallic layers (comprising the different metal layers) on top of a semiconductor presents a novel approach to tuning the surface plasmon frequency between the two individual surface plasmon frequencies of the metals on top of the semiconductor. The Purcell enhancement factor for Au/Ag with varied thickness ratios on GaN shows that the tuning of the surface plasmon frequency without the decrease of the Purcell enhancement factor is achieved. PL studies demonstrated the concept of the tuning of the SP dispersion by using the double-metallic layers deposited on top InGaN/GaN QWs. The concept of tuning of the surface plasmon frequency using double-metallic Au/Ag layers deposited on top of GaN can be extended with other metallic layers on GaN to tune to other SP frequencies including from UV up to the red spectral regime, from about 200 nm up to 100 micron. This novel approach realizes surface plasmon based LEDs with significantly enhanced radiative recombination rate and radiative efficiency for a wide frequency range in the visible spectral regime.
While there has been described herein the principles of the invention, it is to be understood by those skilled in the art that this description is made only by way of example and not as a limitation to the scope of the invention. Accordingly, it is intended by the appended claims, to cover all modifications of the invention which fall within the true spirit and scope of the invention.
Claims (11)
1. A method of fabricating an InGaN quantum well LED having a tunable surface plasmon frequency, comprising:
forming a GaN substrate;
forming a first metallic layer of a first metallic material on said substrate, said first metallic layer having a first surface plasmon frequency and having a first thickness; and
forming a second metallic layer of a second metallic material on said first metallic layer, said second metallic layer having a second surface plasmon frequency that is higher than said first surface plasmon frequency and having a second thickness; and
tuning the plasmon frequency of said LED to a predetermined value by selecting a predetermined ratio of said first thickness to said second thickness.
2. The method as set forth in claim 1 , wherein said first metallic material comprises gold.
3. The method as set forth in claim 2 , wherein said second metallic material comprises silver.
4. The method as set forth in claim 3 , wherein a ratio of gold thickness to silver thickness is selected so that the surface plasmon frequency of said LED is the green spectral regime.
5. The method as set forth in claim 3 , wherein a ratio of gold thickness to silver thickness is selected so that the surface plasmon frequency of said LED is in the range of about 420 nm to 560 nm.
6. The method as set forth in claim 5 , wherein a ratio of gold thickness to silver thickness is selected so that the surface plasmon frequency of said LED is in the range of about 510 nm to 550 nm.
7. The method as set forth in claim 5 , wherein a ratio of gold thickness to silver thickness is selected so that the surface plasmon frequency of said LED is about 520 nm.
8. The method as set forth in claim 5 , wherein a ratio of gold thickness to silver thickness is selected so that the surface plasmon frequency of said LED is about 530 nm.
9. The method as set forth in claim 5 , wherein a ratio of gold thickness to silver thickness is selected so that the surface plasmon frequency of said LED is about 540 nm.
10. The method as set forth in claim 5 , wherein a ratio of gold thickness to silver thickness is selected so that the surface plasmon frequency of said LED is about 550 nm.
11. The method as set forth in claim 1 , wherein a ratio of a thickness of said first metallic layer to a thickness of said second metallic layer is selected so that the surface plasmon frequency of said LED is in the range of about 200 nm to 1 micron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/963,117 US8685767B2 (en) | 2009-12-08 | 2010-12-08 | Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26752909P | 2009-12-08 | 2009-12-08 | |
| US12/963,117 US8685767B2 (en) | 2009-12-08 | 2010-12-08 | Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| US20110133157A1 US20110133157A1 (en) | 2011-06-09 |
| US8685767B2 true US8685767B2 (en) | 2014-04-01 |
Family
ID=44081133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US12/963,117 Expired - Fee Related US8685767B2 (en) | 2009-12-08 | 2010-12-08 | Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8685767B2 (en) |
| WO (1) | WO2011072011A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2701467C1 (en) * | 2018-12-25 | 2019-09-26 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) | Transparent conductive oxide |
| RU2701468C1 (en) * | 2018-12-25 | 2019-09-26 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" (Университет ИТМО) | Transparent conductive oxide with gold nanoparticles |
| CN112183018A (en) * | 2020-09-30 | 2021-01-05 | 华南理工大学 | Simulation method for electric-thermal combined modeling of multi-gate-finger gallium nitride device |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060038191A1 (en) | 2004-08-20 | 2006-02-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device |
| US20060273327A1 (en) | 2005-06-02 | 2006-12-07 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode |
| US20070115474A1 (en) | 2003-10-09 | 2007-05-24 | Commissariat A L'energie | Microsensors and nanosensors for chemical and biological species with surface plasmons |
| US7242030B2 (en) | 2004-12-30 | 2007-07-10 | Industrial Technology Research Institute | Quantum dot/quantum well light emitting diode |
| US20070181889A1 (en) | 2006-02-08 | 2007-08-09 | Kenji Orita | Semiconductor light emitting device and method for manufacturing the same |
| US20080142782A1 (en) | 2006-12-15 | 2008-06-19 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device |
| US7521273B2 (en) | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Light emitting device methods |
| US20090101931A1 (en) | 2004-09-22 | 2009-04-23 | Luxtaltek Corporation | Light Emitting Diode Structures |
| US20090114940A1 (en) * | 2007-11-01 | 2009-05-07 | National Taiwan University | Light-Emitting Device |
| WO2009096919A1 (en) | 2008-01-30 | 2009-08-06 | Hewlett-Packard Development Company, L.P. | Plasmon enhanced light-emitting diodes |
| US20090250685A1 (en) | 2008-04-02 | 2009-10-08 | Yong-Tae Moon | Light emitting device |
| US20090261317A1 (en) | 2005-09-06 | 2009-10-22 | Roberto Paiella | Enhancement of Light Emission Efficiency by Tunable Surface Plasmons |
| US20090267049A1 (en) | 2008-04-24 | 2009-10-29 | Hans Cho | Plasmon Enhanced Nanowire Light Emitting Diode |
| US20090315069A1 (en) | 2004-12-13 | 2009-12-24 | Hanbeam Co., Ltd. | Thin gallium nitride light emitting diode device |
-
2010
- 2010-12-08 US US12/963,117 patent/US8685767B2/en not_active Expired - Fee Related
- 2010-12-08 WO PCT/US2010/059457 patent/WO2011072011A1/en active Application Filing
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7521273B2 (en) | 2003-04-15 | 2009-04-21 | Luminus Devices, Inc. | Light emitting device methods |
| US20070115474A1 (en) | 2003-10-09 | 2007-05-24 | Commissariat A L'energie | Microsensors and nanosensors for chemical and biological species with surface plasmons |
| US20060038191A1 (en) | 2004-08-20 | 2006-02-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting device |
| US20090101931A1 (en) | 2004-09-22 | 2009-04-23 | Luxtaltek Corporation | Light Emitting Diode Structures |
| US20090315069A1 (en) | 2004-12-13 | 2009-12-24 | Hanbeam Co., Ltd. | Thin gallium nitride light emitting diode device |
| US7242030B2 (en) | 2004-12-30 | 2007-07-10 | Industrial Technology Research Institute | Quantum dot/quantum well light emitting diode |
| US20060273327A1 (en) | 2005-06-02 | 2006-12-07 | Samsung Electro-Mechanics Co., Ltd. | Light emitting diode |
| US20090261317A1 (en) | 2005-09-06 | 2009-10-22 | Roberto Paiella | Enhancement of Light Emission Efficiency by Tunable Surface Plasmons |
| US20070181889A1 (en) | 2006-02-08 | 2007-08-09 | Kenji Orita | Semiconductor light emitting device and method for manufacturing the same |
| US20080142782A1 (en) | 2006-12-15 | 2008-06-19 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device |
| US20090114940A1 (en) * | 2007-11-01 | 2009-05-07 | National Taiwan University | Light-Emitting Device |
| WO2009096919A1 (en) | 2008-01-30 | 2009-08-06 | Hewlett-Packard Development Company, L.P. | Plasmon enhanced light-emitting diodes |
| US20090250685A1 (en) | 2008-04-02 | 2009-10-08 | Yong-Tae Moon | Light emitting device |
| US20090267049A1 (en) | 2008-04-24 | 2009-10-29 | Hans Cho | Plasmon Enhanced Nanowire Light Emitting Diode |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011072011A1 (en) | 2011-06-16 |
| US20110133157A1 (en) | 2011-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7956370B2 (en) | Silicon based solid state lighting | |
| US20050285128A1 (en) | Surface plasmon light emitter structure and method of manufacture | |
| US20110108800A1 (en) | Silicon based solid state lighting | |
| WO2007142203A1 (en) | Quantum dot light emitting inorganic el element | |
| US20110233514A1 (en) | Surface plasmon enhanced light-emitting diode | |
| TWI593135B (en) | Semiconductor structure having an active region containing indium gallium nitride, a method of forming such a semiconductor structure, and a light-emitting element formed using the semiconductor structure | |
| WO2015187238A2 (en) | Ultrafast light emitting diodes for optical wireless communications | |
| US20160276530A1 (en) | Semiconductor structures having active regions comprising ingan and methods of forming such semiconductor structures | |
| US20150333219A1 (en) | SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS COMPRISING InGaN, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND LIGHT EMITTING DEVICES FORMED FROM SUCH SEMICONDUCTOR STRUCTURES | |
| Vadivelu et al. | 633 nm red emissions from InGaN nanocolumn light-emitting diode by radio frequency plasma assisted molecular beam epitaxy | |
| KR101011108B1 (en) | Light emitting device using selective surface plasmon bond and manufacturing method | |
| US8685767B2 (en) | Surface plasmon dispersion engineering via double-metallic AU/AG layers for nitride light-emitting diodes | |
| Cho et al. | Enhanced emission efficiency of GaN-based flip-chip light-emitting diodes by surface plasmons in silver disks | |
| Melanson et al. | Analysis of InGaN-delta-InN quantum wells on InGaN substrates for red light emitting diodes and lasers | |
| JP2010283400A (en) | Semiconductor light emitting device | |
| Kao et al. | Localized surface plasmon-enhanced nitride-based light-emitting diode with Ag nanotriangle array by nanosphere lithography | |
| KR102597083B1 (en) | Aluminum nitride-aluminum oxide layer to improve the efficiency of group III nitride light emitting devices | |
| Lin et al. | Behaviors of surface plasmon coupled light-emitting diodes induced by surface Ag nanoparticles on dielectric interlayers | |
| US11482652B2 (en) | Method for producing an extraction-layer light-emitting diode comprising a step of dimensioning a semiconductor layer | |
| JP5520178B2 (en) | Light emitting diode | |
| Zhao et al. | Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes | |
| Tansu et al. | Novel approaches for high-efficiency InGaN quantum wells light-emitting diodes: Device physics and epitaxy engineering | |
| CN101141046A (en) | Surface plasmon-assisted wavelength-tunable light-emitting devices | |
| TW200952206A (en) | Light-emitting device, white light-emitting diode, method for improving efficiency of a white light-emitting diode and method for forming a red light-emitting diode | |
| Sun et al. | Photoluminescence tailoring of InGaN/GaN quantum wells with silver nanoparticle‐assembled films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: LEHIGH UNIVERSITY, PENNSYLVANIA Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:TANSU, NELSON;ZHAO, HONGPING;ZHANG, JING;AND OTHERS;REEL/FRAME:025744/0560 Effective date: 20110118 |
|
| STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
| FEPP | Fee payment procedure |
Free format text: SURCHARGE FOR LATE PAYMENT, SMALL ENTITY (ORIGINAL EVENT CODE: M2554) |
|
| MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YR, SMALL ENTITY (ORIGINAL EVENT CODE: M2551) Year of fee payment: 4 |
|
| FEPP | Fee payment procedure |
Free format text: MAINTENANCE FEE REMINDER MAILED (ORIGINAL EVENT CODE: REM.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
| LAPS | Lapse for failure to pay maintenance fees |
Free format text: PATENT EXPIRED FOR FAILURE TO PAY MAINTENANCE FEES (ORIGINAL EVENT CODE: EXP.); ENTITY STATUS OF PATENT OWNER: SMALL ENTITY |
|
| STCH | Information on status: patent discontinuation |
Free format text: PATENT EXPIRED DUE TO NONPAYMENT OF MAINTENANCE FEES UNDER 37 CFR 1.362 |
|
| FP | Lapsed due to failure to pay maintenance fee |
Effective date: 20220401 |
|
| AS | Assignment |
Owner name: NATIONAL SCIENCE FOUNDATION, VIRGINIA Free format text: CONFIRMATORY LICENSE;ASSIGNOR:LEHIGH UNIVERSITY;REEL/FRAME:071149/0538 Effective date: 20230803 |