CN100524810C - Horizontal PNP type audion and its making method - Google Patents
Horizontal PNP type audion and its making method Download PDFInfo
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- CN100524810C CN100524810C CNB200610117428XA CN200610117428A CN100524810C CN 100524810 C CN100524810 C CN 100524810C CN B200610117428X A CNB200610117428X A CN B200610117428XA CN 200610117428 A CN200610117428 A CN 200610117428A CN 100524810 C CN100524810 C CN 100524810C
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Abstract
The invention discloses a transverse PNP type triode and a manufacturing method thereof. A silicon dioxide buried layer is arranged between a P type emitter region and an N type buried layer. The manufacturing method includes injecting oxygen ions partially in an N type epitaxial layer after the completion of the N type epitaxial layer growth; the position of injecting oxygen ions is between the N type buried layer and the P type emitter region to be formed and the injected oxygen ions can facilitate to form the silicon dioxide buried layer partially between the N type buried layer and the P type emitter layer in subsequent heating course. The transverse PNP type triode manufactured according to the method provided by the invention can improve the collection efficiency of collecting electrodes and the current gain of the triode.
Description
Technical field
The present invention relates to a kind of semiconductor and manufacture craft thereof, particularly a kind of horizontal PNP type audion and manufacture method thereof.
Background technology
At present common positive-negative-positive triode often be made into horizontal, its structural profile as shown in Figure 1, vertical view is as shown in Figure 2.Longitudinally be n type buried layer and N type epitaxial loayer successively on the P type substrate, N type epitaxial loayer comprises P type collector region, N type base, P type emitter region, isolate by oxygen between base and the collector region, P type collector region by collector electrode draw, P type emitter region by emitter draw, N type base draws by base stage.Its base can be divided into two parts: a part is an intrinsic base region, and another part is outside base.Intrinsic base region can be divided into main base and negative base again, and main base is the part between emitter region and collector region in a lateral direction, and negative base is the part that links to each other with the emitter region on the longitudinal direction; Outside base is the base electrode that intrinsic base region is connected to the base; The distribution of main base, negative base, outside base as shown in Figure 3.Owing to partly have a negative base in intrinsic base region, reduced the current gain of horizontal triode.
The manufacturing process of above-mentioned conventional transverse PNP type dynatron is as shown in Figure 9:
At first, ion injects the buried regions that antimony ion mixes as the N type on P type substrate;
Next epitaxial growth one deck is mixed the N type epitaxial loayer of phosphorus;
Inject by ion again, in epitaxial loayer, form the collector region of P type respectively, the base of N type, and the emitter region of P type;
Between collector region and base, form the isolated area of silicon dioxide then by oxidation technology;
Carry out drawing and being connected of each electrode at last, the final structure that forms as shown in Figure 1.
By the current direction in the conventional transverse PNP type dynatron device of above-mentioned technology formation as shown in Figure 7, wherein, the emitter region is collected by collector region to the hole of base emitted transverse, and vertically the hole of emission is collected by the base.The junction depth of setting emitter is D, and transverse width is L, and length is S, and the hole current density of base and emitter region knot is J
h, electron current density is J
e, J wherein
hMuch larger than J
eDo not considering that the current gain of transverse PNP type dynatron is in the prior art under the compound situation of base charge carrier:
In this case, keep the vertical junction depth D in emitter region constant, horizontal length S and width L are big more, and the gain of electric current is more little, that is to say, is requiring big electric current, and under large-sized situation, the gain of electric current will be more little.
Summary of the invention
The technical problem to be solved in the present invention provides a kind of transverse PNP type dynatron, can improve the collection efficiency of collector electrode and the current gain of triode.
For solving the problems of the technologies described above, transverse PNP type dynatron of the present invention, the collector region and the N type base that comprise n type buried layer on P type substrate, the P type substrate, the P type emitter region in the N type epitaxial loayer, P type, between N type base and the P type collector region oxygen isolated area is arranged, the silicon dioxide buried regions is set between P type emitter region and n type buried layer.
The present invention is by being provided with the silicon dioxide buried regions between P type emitter region and n type buried layer, because the existence of this silicon dioxide buried regions, changed the structure of transverse PNP type dynatron base, promptly, negative base part in the intrinsic base region in the conventional horizontal PNP type audion has been eliminated, changed the emission of P type emitter region electric current, improved the collection efficiency of collector electrode, thereby improved the current gain of horizontal triode.
Another technical problem that the present invention will solve provides a kind of manufacture method of above-mentioned transverse PNP type dynatron, can form the transverse PNP type dynatron that this kind can improve the current gain of the collection efficiency of collector electrode and triode.
For solving the problems of the technologies described above, the manufacture method of transverse PNP type dynatron of the present invention, after having made P type substrate, ion injects antimony ion formation n type buried layer on P type substrate, then with the N type epitaxial loayer of n type buried layer epitaxial growth one deck Doping Phosphorus, oxonium ion is injected in the part in N type epitaxial loayer again, the position of injecting oxonium ion is between the n type buried layer and the P type emitter region that will form, then be infused in the collector region that forms the P type in the N type epitaxial loayer respectively by ion, the emitter region of the base of N type and P type, between P type collector region and N type base, form the step of described oxygen isolated area again by oxidation technology, at last electrode is drawn and be connected.
The present invention is after N type outer layer growth is finished, and then oxonium ion is injected in the part in N type epitaxial loayer, the position of injecting oxonium ion is between the n type buried layer and the P type emitter region that will form, and the oxonium ion of injection can make in follow-up thermal process and form local silicon dioxide buried regions between n type buried layer and the P type emitter region.
Description of drawings
Fig. 1 is the structural representation of the transverse PNP type dynatron of routine in the prior art, and wherein D represents the junction depth of emitter;
Fig. 2 is the vertical view of transverse PNP type dynatron shown in Figure 1, and wherein L represents the transverse width of emitter, and S represents emitter length;
Fig. 3 is the distribution schematic diagram of main base in the lateral PNP triode shown in Figure 1, negative base, outside base;
After Fig. 4 is the part injection oxonium ion step of introducing among the present invention, the generalized section of the silicon dioxide buried regions that in N type epitaxial loayer, forms;
Fig. 5 is the structural representation of lateral PNP triode provided by the present invention;
Fig. 6 is in the structure of lateral PNP triode provided by the present invention shown in Figure 5, the distribution schematic diagram of main base, silicon dioxide buried regions, outside base;
Fig. 7 is the current direction schematic diagram in the conventional transverse PNP type dynatron device in the prior art, wherein, solid arrow represents that the hole flows to, dotted arrow represent electron stream to;
Fig. 8 is the current direction schematic diagram in the transverse PNP type dynatron device of the present invention, wherein, solid arrow represents that the hole flows to, dotted arrow represent electron stream to;
Fig. 9 is a transverse PNP type dynatron manufacture craft flow process in the prior art;
Figure 10 is a transverse PNP type dynatron manufacture craft flow process of the present invention.
Embodiment
The present invention is further detailed explanation below in conjunction with accompanying drawing.
The structure of transverse PNP type dynatron of the present invention as shown in Figure 5 and Figure 6, different with the structure of Fig. 1 and transverse PNP type dynatron of the prior art shown in Figure 3 is: according to prior art, be negative base between n type buried layer and p type emitter region; And according to the present invention, between n type buried layer and p type emitter region, be the silicon dioxide buried regions.
The advantage of transverse PNP type dynatron provided by the present invention has been eliminated the negative base part in the intrinsic base region, changed the emission of emitter region electric current, the emitter region electric current as shown in Figure 8 in the transverse PNP type dynatron of the present invention, wherein, between emitter region and silicon dioxide buried regions, there is not electric current.If the junction depth of emitter is D, transverse width is L, and length is S, and the hole current density of base and emitter region knot is J
h, electron current density is J
e, do not considering that the current gain of transverse PNP type dynatron of the present invention is under the compound situation of base charge carrier:
Because J
hMuch larger than J
eAnd this difference can be the difference of several orders of magnitude, so, compares with the current gain of transverse PNP type dynatron in the prior art, the current gain of transverse PNP type dynatron of the present invention can obtain to improve greatly, and the lateral dimension of current gain and device emitter region is uncorrelated.Simultaneously, horizontal PNP type audion provided by the present invention can be with the junction area of base and emitter region from (2 * D * (L+S)+L * S) be reduced to (2 * D * (L+S)) of the prior art, reduced altogether (L * S), thereby reduced junction capacitance, the frequency response of device is also increased.
The manufacture method of transverse PNP type dynatron of the present invention as shown in Figure 9, after having made P type substrate, ion injects antimony ion formation n type buried layer on P type substrate, then with the N type epitaxial loayer of n type buried layer epitaxial growth one deck Doping Phosphorus, oxonium ion is injected in the part in N type epitaxial loayer again, the position of injecting oxonium ion is between the n type buried layer and the P type emitter region that will form, then be infused in the collector region that forms the P type in the N type epitaxial loayer respectively by ion, the emitter region of the base of N type and P type, between P type collector region and N type base, form the step of described oxygen isolated area again by oxidation technology, at last electrode is drawn and be connected.Different with the method for making transverse PNP type dynatron in the prior art is, method provided by the present invention is after the outer layer growth of common process flow process is finished, and then the injection that adds one oxonium ion, the local oxonium ion that injects below the base, and the oxonium ion that injects forms local silicon dioxide buried regions in follow-up thermal process; Owing to the existence of silicon dioxide buried regions, changed the structure of lateral PNP triode base.
Manufacture method provided by the present invention utilizes the buried regions of local silicon dioxide to eliminate negative base part in the intrinsic base region of transverse PNP type dynatron device, its formed new lateral PNP audion can improve the current gain of horizontal triode, and the negative base part in the removal intrinsic base region, the junction area of back emitter region and base can correspondingly reduce, thereby reduced the junction capacitance of emitter region and base, changed the characteristic of frequency response to a certain extent.
Claims (2)
1, a kind of transverse PNP type dynatron, the collector region and the N type base that comprise n type buried layer on P type substrate, the P type substrate, the N type epitaxial loayer on the n type buried layer, the P type emitter region in the N type epitaxial loayer, P type, between N type base and the P type collector region oxygen isolated area is arranged, it is characterized in that, the silicon dioxide buried regions is set between P type emitter region and n type buried layer.
2, a kind of manufacture method of making the described transverse PNP type dynatron of claim 1 is characterized in that, comprising:
Make the step of described P type substrate;
Ion injects the step that antimony ion forms described n type buried layer on P type substrate;
Step with the described N type epitaxial loayer of n type buried layer epitaxial growth one deck Doping Phosphorus;
The local step of injecting oxonium ion in N type epitaxial loayer, the position of injecting oxonium ion is between the n type buried layer and the described P type emitter region that will form;
Inject by ion, in N type epitaxial loayer, form the step of the emitter region of the base of the collector region of described P type, described N type and P type respectively;
Between P type collector region and N type base, form the step of described oxygen isolated area by oxidation technology;
Drawing and step of connecting of electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610117428XA CN100524810C (en) | 2006-10-23 | 2006-10-23 | Horizontal PNP type audion and its making method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200610117428XA CN100524810C (en) | 2006-10-23 | 2006-10-23 | Horizontal PNP type audion and its making method |
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| CN101170128A CN101170128A (en) | 2008-04-30 |
| CN100524810C true CN100524810C (en) | 2009-08-05 |
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| CNB200610117428XA Active CN100524810C (en) | 2006-10-23 | 2006-10-23 | Horizontal PNP type audion and its making method |
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| CN102376757B (en) * | 2010-08-12 | 2013-06-12 | 上海华虹Nec电子有限公司 | Transverse parasitic PNP device in SiGe HBT technology and manufacture method thereof |
| CN114709254B (en) * | 2022-04-01 | 2023-03-21 | 无锡友达电子有限公司 | High-voltage parallel diode structure with composite buried layer and preparation method thereof |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131218 |
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Free format text: CORRECT: ADDRESS; FROM: 201206 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20131218 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |