CN100521135C - 偏振分析方法 - Google Patents

偏振分析方法 Download PDF

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Publication number
CN100521135C
CN100521135C CNB038036142A CN03803614A CN100521135C CN 100521135 C CN100521135 C CN 100521135C CN B038036142 A CNB038036142 A CN B038036142A CN 03803614 A CN03803614 A CN 03803614A CN 100521135 C CN100521135 C CN 100521135C
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CN
China
Prior art keywords
layer
light transmittance
polarized light
reflected
analysis method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB038036142A
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English (en)
Chinese (zh)
Other versions
CN1630940A (zh
Inventor
菊池俊彦
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1630940A publication Critical patent/CN1630940A/zh
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Publication of CN100521135C publication Critical patent/CN100521135C/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
CNB038036142A 2002-02-18 2003-02-10 偏振分析方法 Expired - Fee Related CN100521135C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP40506/2002 2002-02-18
JP2002040506A JP3878027B2 (ja) 2002-02-18 2002-02-18 偏光解析方法及び光学的膜厚測定装置

Publications (2)

Publication Number Publication Date
CN1630940A CN1630940A (zh) 2005-06-22
CN100521135C true CN100521135C (zh) 2009-07-29

Family

ID=27678309

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038036142A Expired - Fee Related CN100521135C (zh) 2002-02-18 2003-02-10 偏振分析方法

Country Status (5)

Country Link
US (1) US6950186B2 (enExample)
JP (1) JP3878027B2 (enExample)
CN (1) CN100521135C (enExample)
AU (1) AU2003207200A1 (enExample)
WO (1) WO2003069667A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10319843A1 (de) 2003-05-03 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Tiefe einer vergrabenen Struktur
TWI460418B (zh) 2005-11-29 2014-11-11 Horiba Ltd 有機電致發光元件之製造方法及製造裝置
JP4317558B2 (ja) * 2006-08-23 2009-08-19 株式会社堀場製作所 試料解析方法、試料解析装置及びプログラム
US20070178611A1 (en) * 2006-01-30 2007-08-02 Shoaib Zaidi Semiconductor wafer having measurement area feature for determining dielectric layer thickness
JP5264374B2 (ja) * 2008-09-02 2013-08-14 東京エレクトロン株式会社 パターン形状検査方法及び半導体装置の製造方法
JP5471367B2 (ja) * 2009-11-30 2014-04-16 株式会社島津製作所 膜厚測定方法及び膜厚測定装置
JP5857714B2 (ja) * 2011-12-16 2016-02-10 富士通セミコンダクター株式会社 パターン測定方法及び半導体装置の製造方法
CN102553787A (zh) * 2011-12-23 2012-07-11 广东工业大学 一种涂浆机上浆量检测装置及方法
FR2998047B1 (fr) * 2012-11-12 2015-10-02 Soitec Silicon On Insulator Procede de mesure des variations d'epaisseur d'une couche d'une structure semi-conductrice multicouche
CN103968949B (zh) * 2013-02-04 2016-04-27 清华大学 偏振光检测系统
CN103968948B (zh) * 2013-02-04 2016-04-27 清华大学 偏振光的检测方法
CN103674892B (zh) * 2013-11-21 2015-09-30 中国科学院上海技术物理研究所 一种基于全内反射偏振位相差测量来监控薄膜生长的方法
US11085754B2 (en) * 2017-12-12 2021-08-10 Kla Corporation Enhancing metrology target information content
US11852457B2 (en) * 2021-12-20 2023-12-26 GM Global Technology Operations LLC Contactless method for polymer coating thickness measurement
CN115284162B (zh) * 2022-07-19 2024-03-19 华虹半导体(无锡)有限公司 介质层的物理性能、半导体芯片性能的监测方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6233046B1 (en) * 1998-06-30 2001-05-15 Stmicroelectronics S.R.L. Method of measuring the thickness of a layer of silicon damaged by plasma etching

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3781245B2 (ja) * 1997-12-26 2006-05-31 富士通株式会社 半導体装置の製造方法
US6483580B1 (en) * 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6233046B1 (en) * 1998-06-30 2001-05-15 Stmicroelectronics S.R.L. Method of measuring the thickness of a layer of silicon damaged by plasma etching

Also Published As

Publication number Publication date
US20050007592A1 (en) 2005-01-13
JP3878027B2 (ja) 2007-02-07
JP2003243467A (ja) 2003-08-29
AU2003207200A1 (en) 2003-09-04
US6950186B2 (en) 2005-09-27
CN1630940A (zh) 2005-06-22
WO2003069667A1 (fr) 2003-08-21

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CF01 Termination of patent right due to non-payment of annual fee