CN100517626C - Vacuum apparatus, method for measuring a leak rate thereof, program used in measuring the leak rate and storage medium storing the program - Google Patents
Vacuum apparatus, method for measuring a leak rate thereof, program used in measuring the leak rate and storage medium storing the program Download PDFInfo
- Publication number
- CN100517626C CN100517626C CNB2006100083620A CN200610008362A CN100517626C CN 100517626 C CN100517626 C CN 100517626C CN B2006100083620 A CNB2006100083620 A CN B2006100083620A CN 200610008362 A CN200610008362 A CN 200610008362A CN 100517626 C CN100517626 C CN 100517626C
- Authority
- CN
- China
- Prior art keywords
- valve
- vacuum chamber
- leak rate
- vacuum
- exhaust pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
A leak rate measuring method measures a leak rate of a vacuum apparatus including a vacuum chamber in which an object is accommodated to be processed, a first gas exhaust pump connected to the vacuum chamber via a first valve serving as a conductance variable valve, and a second valve connected to a downstream side of the first gas exhaust pump in a gas flowing direction. In the leak rate measuring method, there is provided a circulating path branched from a gas exhaust path between the first gas exhaust pump and the second valve and connected to the vacuum pump to communicate therewith. The pressure inside the vacuum chamber is monitored by circulating a gas into the vacuum chamber through the circulating path with first gas exhaust pump under the condition that the first valve is set at a predetermined conductance and the second valve is closed.
Description
Technical field
The present invention relates to that handled objects such as semiconductor wafer are carried out etching or film forming etc. and handle the vacuum plant of usefulness, the method for measurement of its leak rate, the program and the storage medium that when measuring its leak rate, use.
Background technology
In making the process of various semiconductor devices, in the vacuum plant that when etching or film forming etc. are handled, uses, be provided with the exhaust portion that comprises valve and exhaust pump, its structure makes it possible to the specified vacuum state that reduces pressure of the pressure in the vacuum chamber.
Particularly, from the vacuum chamber side, connecting the variable automatic pressure control valve of its conductibility (APC valve), gate valve successively, as the turbomolecular pump (TMP) of main scavenging pump, through valve is as the dry pump of secondary exhaust pump arbitrarily, its structure makes it possible to keep the high airtight conditions and the vacuum state of vacuum chamber.Sometimes also use the strap brake valve system APC valve of above-mentioned APC valve and gate valve being made one.
In such vacuum plant, be necessary the leak rate of periodic measurement vacuum chamber, check its air-tightness.When measuring leak rate, the gaseous emission in the vacuum chamber is fallen, carry out airtightly after vacuumizing, the pressure under this state in the measuring chamber is monitored its variation (such as patent documentation 1) by the method for accumulation.In order to carry out the measurement of leak rate by accumulative, must make vacuum chamber be in air-tight state, be equipped with above-mentioned gate valve (or above-mentioned APC valve that gate valve mechanism is housed) at the upstream side of discharge directions from above-mentioned turbomolecular pump.
At gate valve or be equipped with in the middle of the APC valve of gate valve mechanism,, used O shape circle as encapsulant in order to ensure airtight conditions, but in the vacuum plant of handling with plasma, because the free radical that produces when dry method is cleaned makes O shape circle be easy to wear out, and must change continually.The maintenance operation of this O shape circle along with blast pipe bore in recent years becomes big and needs long time, becomes the main cause that device prolongs downtime.
[patent documentation 1] spy opens 2003-77898 communique (Fig. 4 etc.)
The problem that invention will solve
In the exhaust portion of vacuum plant, be equipped with the main purpose of gate valve with the APC valve in abutting connection with (perhaps becoming one) with the APC valve, be for carry out making in the vacuum chamber when above-mentioned accumulative is measured airtight.But, if the enough additive methods of energy replace the measurement of leak rate, just there is no need through gate valve, should be able to reduce replacing O shape significantly and enclose necessary maintenance frequency.
Summary of the invention
Thereby, purpose of the present invention first provides a kind of method of measurement of leak rate, even make under the situation that is not equipped with gate valve, also can correctly measure leak rate from vacuum chamber, second provides a kind of vacuum plant, in order to reduce maintenance times, do not use gate valve at the upstream side of turbomolecular pump discharge directions.
In order to solve above-mentioned problem, according to first viewpoint of the present invention, a kind of method of measurement of leak rate is provided, this method is the leak rate method of measurement that the leak rate of the vacuum plant of following formation is measured, this vacuum plant comprises: portion holds handled object to its vacuum chamber of handling within it, through first exhaust pump that is connected with above-mentioned vacuum chamber as first valve of admittance variable valve, compare second valve that is connected the discharge directions downstream with above-mentioned first exhaust pump
It is characterized in that, be provided with from the exhaust passage branch between above-mentioned first exhaust pump and above-mentioned second valve, the circulation canal that is connected with connected state with above-mentioned vacuum chamber,
At the admittance of above-mentioned first valve setpoint in regulation, under the state of above-mentioned second valve closes, by above-mentioned first exhaust pump will be by above-mentioned circulation canal gas circulation in above-mentioned vacuum chamber, the pressure in the above-mentioned vacuum chamber is monitored.
According to second inventive aspect of the present invention, a kind of method of measurement of leak rate is provided, this method is to measure the leak rate method of measurement of the vacuum plant leak rate of following composition, this vacuum plant comprises: first exhaust pump that hold vacuum chamber that handled object handles in inside, is connected through first valve with above-mentioned vacuum chamber as the admittance variable valve with compare second valve that is connected the discharge directions downstream with above-mentioned first exhaust pump
It is characterized in that at above-mentioned first valve wide open, under the state of above-mentioned first exhaust pump action, above-mentioned second valve closing is monitored the pressure in the exhaust passage between first exhaust pump and above-mentioned second valve.
According to the 3rd inventive aspect of the present invention, a kind of method of measurement of leak rate is provided, this method is the vacuum plant of following formation to be measured the leak rate method of measurement of leak rate, this vacuum plant comprises: within it portion hold vacuum chamber that handled object handles, first exhaust pump that is connected with above-mentioned vacuum chamber through first valve, second exhaust pump that is connected with above-mentioned first exhaust pump through second valve as the admittance variable valve
It is characterized in that, at above-mentioned first valve wide open, under the state that above-mentioned first exhaust pump stops, by above-mentioned second exhaust pump with after reducing pressure below the authorized pressure in the above-mentioned vacuum chamber, above-mentioned second valve closes is monitored the pressure in the above-mentioned vacuum chamber under this state.
According to the 4th inventive aspect of the present invention, a kind of method of measurement of leak rate is provided, this method is the vacuum plant of following formation to be measured the leak rate method of measurement of leak rate, this vacuum plant comprises: within it portion hold vacuum chamber that handled object handles, second valve in first exhaust pump that is connected with above-mentioned vacuum chamber through first valve and the discharge directions downstream that is connected above-mentioned first exhaust pump as the admittance variable valve
It is characterized in that,, and under the state of above-mentioned second valve open,, measure the pressure in the above-mentioned vacuum chamber the admittance of above-mentioned first valve setpoint in regulation in above-mentioned first exhaust pump action.
In the leak rate method of measurement of above-mentioned the 4th viewpoint, the above-mentioned vacuum chamber pressure inside value that precomputes when measured above-mentioned pressure and above-mentioned first valve being arranged on the admittance of regulation compares, and just can extrapolate leak rate.The admittance of afore mentioned rules is preferably at 10L/ below second.
In the past,, make in the vacuum chamber to be under the air-tight state for the leak rate of measuring vacuum chamber all is equipped with gate valve mechanism in the position of comparing with first exhaust pump in the discharge directions upstream.
In other words, the gate valve of the valve adjacency that outfit and admittance are variable, perhaps use the admittance variable valve of gate valve mechanism is housed, make by closed gate valve and to be in air-tight state in the vacuum chamber, measure leak rate by accumulative, but according to any inventive aspect in above-mentioned first to fourth, do not use gate valve mechanism just can measure the leak rate of vacuum chamber, there is no need to be equipped with gate valve mechanism in the position that is being in the discharge directions upstream than first exhaust pump.
According to the 5th inventive aspect of the present invention, a kind of vacuum plant is provided, this device be included in its inside hold handled object to its vacuum chamber of handling, through first exhaust pump that is connected with above-mentioned vacuum chamber as first valve that does not have an admittance variable valve of gate valve mechanism with compare second valve that is connected the discharge directions downstream with above-mentioned first exhaust pump.
According to above-mentioned the 5th viewpoint, comparing the structure that is not equipped with gate valve mechanism on the position that is in the discharge directions upstream owing to adopted with first exhaust pump, the structure of vacuum plant can not used aging very fast O shape circle essential in gate valve mechanism.Thereby the time and funds that need when changing maintenances such as O shape circle, can also cut down the part number, also can improve the fail safe of device except cutting down.
In above-mentioned the 5th inventive aspect, also comprise with above-mentioned second valve and compare second exhaust pump that is connected the discharge directions downstream.In the case, preferred above-mentioned first exhaust pump is a turbomolecular pump, and above-mentioned second exhaust pump dry pump preferably.Preferred above-mentioned first valve is the variable valve of admittance, and this valve is made valve body with a pair of slightly plate of semicircular in shape of balanced configuration, with the marginal portion of the linearity of each plate as pivot, thereby regulate aperture and regulate its admittance by rotating.
Its structure also can comprise the circulation canal of telling the exhaust passage between above-mentioned first exhaust pump and above-mentioned second valve, be connected with above-mentioned vacuum chamber with connected state.
According to the 6th inventive aspect of the present invention, a kind of computer read/write memory medium that stores following program is provided, this program is to be used for measuring the program that a kind of leak rate of vacuum plant is used, this vacuum plant comprises: portion holds handled object to its vacuum chamber of handling within it, through first exhaust pump that is connected with above-mentioned vacuum chamber as first valve of admittance variable valve, compare second valve that is connected the discharge directions downstream with above-mentioned first exhaust pump and on the exhaust passage between above-mentioned first exhaust pump and above-mentioned second valve, tell, the circulation canal that under connected state, is connected with above-mentioned vacuum chamber
It is characterized in that said procedure is operation at least in computer
With above-mentioned first valve setpoint the regulation aperture step,
Under the state of above-mentioned second valve closes, utilize above-mentioned first exhaust pump, by above-mentioned circulation canal make gas to the step of above-mentioned vacuum chamber circulation and
The step that pressure in the above-mentioned vacuum chamber is monitored.
According to the 7th inventive aspect of the present invention, a kind of computer read/write memory medium that stores following program is provided, this program is the program that leak rate is used of measuring in the vacuum plant of following formation, this vacuum plant comprises: within it portion hold handled object and to its vacuum chamber of handling, through first exhaust pump that is connected with above-mentioned vacuum chamber as first valve of admittance variable valve with compare second valve that is connected the discharge directions downstream with above-mentioned first exhaust pump
It is characterized in that said procedure is operation at least in computer
At above-mentioned first valve wide open, under the state of above-mentioned first exhaust pump action, make above-mentioned second valve closes step and
The step that pressure in the exhaust passage between first exhaust pump and above-mentioned second valve is monitored.
According to the 8th inventive aspect of the present invention, a kind of computer read/write memory medium that stores following program is provided, this program is the program that leak rate is used of measuring in the vacuum plant of following formation, this vacuum plant comprises: portion holds handled object and to its vacuum chamber of handling, through as first valve first exhaust pump that is connected with above-mentioned vacuum chamber and second exhaust pump that is connected with above-mentioned first exhaust pump through second valve of admittance variable valve within it
It is characterized in that said procedure, operation at least in computer
At above-mentioned first valve wide open, under the state that above-mentioned first exhaust pump shuts down, by above-mentioned second exhaust pump with the step below the authorized pressure of reducing pressure in the above-mentioned vacuum chamber,
The step of closed thereafter above-mentioned second valve, and
Under the state of above-mentioned second valve closes, the step that the pressure in the above-mentioned vacuum chamber is monitored.
According to the 9th inventive aspect of the present invention, a kind of computer read/write memory medium that stores following program is provided, this program is the program that leak rate is used of measuring in the vacuum plant of following formation, this vacuum plant comprises: portion's second valve of holding handled object and being connected with discharge directions downstream at above-mentioned first exhaust pump to its vacuum chamber of handling, through first exhaust pump that is connected with above-mentioned vacuum chamber as first valve of admittance variable valve within it
It is characterized in that said procedure is operation at least in computer
In above-mentioned first exhaust pump action, and under the state of above-mentioned second valve open, with the step of above-mentioned first valve setpoint in the regulation aperture, and
Measure the step of above-mentioned vacuum chamber internal pressure.
In above-mentioned the 9th inventive aspect, can comprise that the above-mentioned vacuum chamber pressure inside value that precomputes when the regulation aperture by the above-mentioned pressure that will measure and above-mentioned first valve compares the step of extrapolating leak rate.
According to the tenth inventive aspect of the present invention, a kind of vacuum plant is provided, this device is included in its inside and holds handled object to its vacuum chamber of handling,
It is characterized in that, connecting control part in above-mentioned vacuum chamber, the leak rate method of measurement of first～the 4th inventive aspect is implemented in control.
According to the 11 inventive aspect of the present invention, a kind of vacuum flush system is provided, this system comprises the vacuum plant of a plurality of the tenth inventive aspects,
It is characterized in that, it have be connected with above-mentioned control part and blanket they, the blanket control part that above-mentioned whole vacuum flush system is controlled.
According to the present invention, need not be equipped with the gate valve of admittance variable valve adjacency or with the admittance variable valve and make the gate valve (the APC valve of gate valve mechanism is housed) of one, just can measure the leak rate of vacuum chamber.Thereby, need not keep in repair the necessary aging easily O shape circle of gate valve mechanism, except having reduced the necessary device of maintenance downtime, can also reduce the cost that produces because of maintenance.
Description of drawings
The general configuration figure of Fig. 1 vacuum plant of the present invention.
Fig. 2 represents to be equipped with the general configuration figure of the APC valve of gate valve mechanism.
Fig. 3 is the figure that is used for illustrating the butterfly valve general configuration, (a) is plane graph, (b) is expression and the user mode sectional drawing of turbomolecular pump in abutting connection with outfit.
Fig. 4 is the general configuration figure of explanation vacuum plant variant embodiment.
Fig. 5 is the general configuration figure that expression comprises the vacuum flush system of vacuum plant.
Fig. 6 is the general configuration figure of control part.
Fig. 7 is the general configuration figure of the another kind of vacuum flush system of expression.
Fig. 8 is the roughly flow chart that expression relates to the leak rate method of measurement of first execution mode.
Fig. 9 is an ideograph of representing the exhaust portion state when the leak rate of first execution mode is measured.
Figure 10 is illustrated in the figure that carries out the vacuum chamber pressure oscillation of leak rate when measuring by first execution mode.
Figure 11 is the leak rate method of measurement flow chart of situation roughly that expression relates to second execution mode.
Figure 12 is the ideograph of the leak rate that is illustrated in second execution mode exhaust portion state when measuring.
Figure 13 is illustrated in the figure that carries out the vacuum chamber pressure oscillation of leak rate when measuring by second execution mode.
Figure 14 is the roughly flow chart that expression relates to the leak rate method of measurement of the 3rd execution mode.
Figure 15 is the ideograph of the exhaust portion state when the leak rate of expression the 3rd execution mode is measured.
Figure 16 is illustrated in the figure that carries out the vacuum chamber pressure oscillation of leak rate when measuring by the 3rd execution mode.
Figure 17 is the roughly flow chart that expression relates to the leak rate method of measurement of the 4th execution mode.
Figure 18 is the ideograph of the leak rate that is illustrated in the 4th execution mode exhaust portion state when measuring.
Symbol description: 1 vacuum plant; 2 vacuum chambers; 3 pedestals; 4 exhaust outlets; 5 spray heads; The 21APC valve; 22 turbomolecular pumps; 23 valves; 24 dry pump; 30 control parts; The W semiconductor wafer.
Embodiment
Preferred implementation of the present invention is described with reference to the accompanying drawings.Fig. 1 is the figure of general configuration that expression relates to the vacuum plant 1 of first embodiment of the invention.This vacuum plant 1 constitutes parallel relative parallel plate-type plasma processing apparatus up and down by the pair of electrodes plate, uses when being suitable for carrying out etch processes in the process of making semiconductor device.
It is the mounting table of semiconductor wafer (below abbreviate " wafer " as) W as handled object that vacuum plant 1 has in vacuum chamber 2, and as the pedestal 3 of lower electrode performance function.On pedestal 3 parallel relative top positions therewith, be provided with the spray head 5 of upper electrode function with ground connection.Interval between pedestal 3 and spray head 5 can be regulated by the elevating mechanism that does not show among the figure that is arranged on pedestal 3.
Connecting gas supply pipe 8 on spray head 5, this gas supply pipe 8 is being connected gas supply source 12 through valve 9, flow regulator 10 with valve 11.To just having narrated a gas supply source 12, according to the kind difference of handling gas, it is a plurality of to connect outfit at Fig. 1.From the gas of such gas supply source 12, in the gas supply chamber 7 in the gas supply pipe 8 arrival spray heads 5, be discharged to equably in the vacuum chamber 2 from gas discharge outlet 6.
On the pedestal 3 that has as the lower electrode function, connecting high frequency electric source 13 by the adaptation that does not show among the figure, this high frequency electric source 13 can be to the High frequency power of supplying with optional frequency as the pedestal 3 of lower electrode.
The structure of APC valve 21 makes it possible to based on the force value by the pressure gauge that is used for measuring vacuum chamber 2 internal pressures (PG) 25 measurements, change admittance (conductance: conductance), carry out the automatic control of pressure through control part 30 (will narrate below).
In the past,, used ratio vibrator type valve 50 as shown in FIG. 2 as the admittance variable valve that gate valve mechanism is housed.The type of action of this vibrator type valve 50 is, by stepping motor 51 flat board (valve body) 52 is swung in the horizontal direction, in the exhaust passage, pass in and out, keep out of the way, regulate admittance thus, under situation as the gate valve function, effect by plunger 55 makes the type of tamper evidence 54 that has comprised O shape circle 53 fall, and the exhaust passage is stopped up.
But, in the vacuum plant 1 of present embodiment,, can make admittance variable valve in various manners owing to do not need the function of gate valve.Such as, as as shown in Fig. 3 (a), can use butterfly valve 60, this valve has places the valve body that obtains symmetrically with the flat board 61,62 of a pair of roughly semicircular in shape, with each linearity marginal portion that is equivalent to string of semicircle dull and stereotyped 61,62 as pivot, regulate aperture by rotating, thereby regulate admittance.Because having by dull and stereotyped 61,62, this butterfly valve 60 erects the structure that angle is arbitrarily regulated aperture to homonymy (such as the discharge directions upstream side), as such as shown in Fig. 3 (b), thereunder directly connect and go up turbomolecular pump 22, because with respect to the size decreases on the cross section perpendicular direction of exhaust passage, with compare at the vibrator type admittance variable valve shown in Fig. 2, have the advantage that the space dwindles significantly be set.
In the vacuum plant 1 of as above structure, wafer W is placed on the pedestal 3, be evacuated down under the specified vacuum state in turbomolecular pump 22 and dry pump 24, will be controlled under the flow of regulation, supply in the vacuum chamber 2 from the etching gas of gas supply source 12 with vacuum chamber 2.Under this state, by on pedestal 3, applying High frequency power, make in vacuum chamber 2, to produce high-frequency electric field as lower electrode, just can make the etching gas plasmaization, wafer W is carried out etch processes.
In the vacuum plant 1 of Fig. 1, be equipped with dry pump 24 through piping in the primary side (downstream of discharge directions) of turbomolecular pump 22.On turbomolecular pump 22, supply with N with firm discharge by purge gas line (not showing among Fig. 1)
2Deng purge gas, by the performance of dry pump 24 and from turbomolecular pump 22 to dry pump 24 duct length, determined the force value (back pressure value) of turbomolecular pump 22 primary side.But, owing to the difference that supplies to gaseous species the vacuum chamber 2 from the gas supply source 12 of vacuum plant 1, such as giving off H
2When the gas that is difficult to flow, be subjected to the influence of turbomolecular pump 22 back pressure values, the pressure of turbomolecular pump 22 suction inlets can change sometimes.
At this, distortion example as Fig. 1 vacuum plant 1, vacuum plant 40 as shown in FIG. 4 is such, in valve 23 downstreams the transducers such as pressure gauge 29 that are used for monitoring turbomolecular pump 22 back pressures are set as second valve, supplying with purge gas (purge gas: on the purge gas line 42 Purge gas), the valve V3 with flow control function can be set to turbomolecular pump 22 simultaneously.Thus, from N
2Gas supply source 41 will be as the N of purge gas through valve V3
2When gas supplied to turbomolecular pump 22, with the back pressure of transducer 29 monitoring turbomolecular pumps 22, based on the pressure of this measurement, V3 regulated N with valve
2The flow of gas just can be controlled the back pressure of turbomolecular pump 22.
That is to say, in the vacuum plant 40 of Fig. 4 structure, by collaborative FEEDBACK CONTROL to transducer 29 and valve V3, the feasible gas N that feeds to turbomolecular pump 22
2Flushing dose change, just the back pressure of turbomolecular pump 22 can be controlled to necessarily thus.According to structure so, suppress because the influence of turbomolecular pump 22 primary side gas extraction system the variation of the turbomolecular pump 22 air entry pressure that (such as the performance of duct length or dry pump 24 etc.) cause, can stably carry out the pressure control in the vacuum chamber 2.
Fig. 5 is the plane graph of vacuum flush system 100 general configuration that expression comprises the vacuum plant 1 of Fig. 1.The structure of this vacuum flush system 100 makes it possible under specified vacuum the wafer W as handled object be implemented etch processes etc.
This vacuum flush system 100 comprises that 3 are handled cabin 110A, 110B and 110C, and each handles cabin 110A, 110B and 110C has separately independently vacuum plant 1 (1a, 1b and 1c).Each structure of handling cabin 110A～110C is same, so be that example describes at this to handle cabin 110A.
The structure of handling cabin 110A has vacuum plant 1a, load locking room 107a and between the gate valve 108a between them.
On vacuum plant 1a, connecting module controller (Module Controller the is designated hereinafter simply as MC) 305a that is used for controlling vacuum chamber 2 internal pressures.Relevant this MC305a will narrate below.Side opposite at load locking room 107a with vacuum plant 1a, be provided with loading unit 103 through gate valve 106a, in an opposite side with load locking room 107a of loading unit 103, be respectively equipped with 3 front-open wafer box mounting tables 102 through 3 connectivity port (not shown) that the front-open wafer box (FOUP) 101 that can hold wafer W is housed.
Be provided with HEPA filter (not shown) at the top of loading unit 103, the peace and quiet air by this HEPA filter supplies under the state that flows downward in the loading unit 103, in atmospheric peace and quiet air ambient, carries out moving into of wafer W and takes out of.Side at loading unit 103 1 ends is provided with finder 105, makes wafer W in place with this.
In loading unit 103, be provided with and wafer case 101 is carried out wafer W send into and take out and load locking room 107a is carried out the wafer transport mechanism 104 that wafer W is sent into taking-up.This wafer transport mechanism 104 has the structure of multi-joint arm, is loaded with wafer W on the 104a of the portion of picking up of its front end it is carried.
Vacuum flush system 100 is included in the user interface 106 of end configuration of the long side direction of loading unit 103.User interface 106 has input part (keyboard) and by the display part (monitor) that constitutes such as LCD (LCD), this display part demonstrates the running-active status of vacuum flush system 100 each structure important document.
Pressure control in the integral body control in vacuum flush system 100 or the vacuum chamber 2 of vacuum plant 1 etc. is all undertaken by control part 30 (with reference to Fig. 1).Fig. 6 represents the general configuration of control part 30.As shown in FIG. 6, control part 30 comprise EC (Setup Controller) 301 as blanket control part, with vacuum plant 1 corresponding setting a plurality of, such as the switch 304 of 3 MC305a, 305b, 305c and connection EC301 and MC305a～305c.MC not only is provided among vacuum plant 1a～1c, also is provided in such as in load locking room 107a～107c or the loading unit 103, and they are also summed up under EC301, but has omitted diagram and explanation at this.
EC301 is to the blanket and blanket control part that the molar behavior of vacuum flush system 100 is controlled of each MC305a～305c.EC301 has the storage part 303 of CPU (not shown), RAM, HDD etc., CPU from storage part 303 read with on user interface 106 by wafer processing (prescription that promptly the comprises pressure condition) corresponding programs (positional information that comprises measurement point) of appointments such as user, deliver to each MC305a～305c by the corresponding control program of will writing out a prescription therewith, just can control each processing of handling among the 110A～110C of cabin.
MC305a～305c is the common control part of each processing of control cabin 110A～110C action.Each MC305a～305c is through (universal high speed is optimized mensurable transceiver: the network 309 that LSI General High-speed Optimum Scalable Transceiver) realizes is connected respectively on each I/O (I/O) module 308 by being called as GHOST.In GHOST network 309, MC305a～305c is equivalent to host node, and I/O module 308 is equivalent to slave node.
I/O module 308 have with participate in vacuum chamber 2 in a plurality of I/O parts 310 (only demonstrating 4 among the figure) of being connected of pressure controlled each structure important document (terminal part), pass on to the control signal of sending into terminal part with from the signal of terminal part output.At this,, can enumerate such as above-mentioned turbomolecular pump 22, dry pump 24, pressure sensor (pressure gauge 25 etc.), various valve (APC valve 21, valve 23, valve V3 etc.) and switch enclosure (SW BOX) 313 etc. as relevant pressure controlled terminal part.In Fig. 6, just represented being connected of a part of terminal part and I/O part 310 for convenience typically.In GHOST network 309, also be controlled at I/O part 310 in the I/O plate of input and output of digital signal, analog signal and serial signal) (not shown) is connected.
Above-mentioned switch 304 is according to the MC305a～305c that switches from the control signal of EC301 as the side of being connected of EC301.
As mentioned above, MC305a～305c, throughout among stow 1a～1c, collection is by the force value in the measured vacuum chamber 2 of pressure gauge 25 time, also change the admittance of APC valve 21 based on this force value, decision turbomolecular pump 22 or the operate condition of dry pump 24 and the switching of various valve (valve 23 and valve V3 etc.) etc., thereby the pressure in the control vacuum chamber 2.
Such as, each MC305a～305c, can be respectively through various signals such as the startup of I/O module 308 exchange turbomolecular pumps 22 and dry pump 24/stop or warning etc.Thus, when being fed into I/O module 308 from the pump status signal of turbomolecular pump 22 and dry pump 24 or alarm signal, at I/O plate 310 up conversions is serial signal, delivers to switch enclosure (SW BOX) 313 places by local GHOST local area network (LAN) via valve calculating part (VCNT) 311, switch portion (SW) 312.The light-emitting diode of switch enclosure 313 display units such as (LED) is luminous or extinguish thus.
In the control part shown in Fig. 6 30, a plurality of terminal parts directly do not link to each other with EC301, the I/O part 310 that is connected with these a plurality of terminal parts has constituted modular I/O module 308, because this I/O module 308 is connected with EC301 via MC305a～305c and switch 304, communication system is oversimplified.
In the control signal that the CPU of MC305a～305c sends, by address with reference to the I/O part 310 that is connected with required terminal part, with reference to the address that comprises the I/O module 308 of this I/O portion 310, with reference to the address of the I/O part 310 of GHOST in control signal of MC305a～305c, just there is no need to carry out switch 304 grades to the inquiry that CPU carries control signal side, just can realize level and smooth the passing on of control signal thus.
In the vacuum flush system 100 of structure like this, can be at first by the wafer transport mechanism 104 in the loading unit 103 that remains in the atmospheric peace and quiet air ambient, a slice wafer W that to take out from any one front-open wafer box 101 is sent in the finder 105, makes the wafer W location.Then wafer W is sent in any one among load locking room 107a～107c, with this load-lock is indoor vacuumize after, to put into any one vacuum chamber 2 of vacuum plant 1a～1c in the wafer W in this load locking room by the conveying device that does not show among the figure, under high vacuum state, carry out processing such as etching.After this, wafer W is sent among load locking room 107a～107e any one, treat wherein to return to after the atmospheric pressure, will take out in the indoor wafer W of load-lock, be placed on any one in the front-open wafer box 101 by the wafer transport mechanism 104 in the loading unit 103.A collection of wafer W is carried out such operation, and a collection of processing just is through with.
According to the as above vacuum flush system 100 of structure, owing to comprised the MC305a～305c that under domination, controls as the EC301 that sums up control part, based on the pressure in the vacuum chamber that measures by pressure gauge 25 2, can control the switching of action/non-action of admittance adjustment, turbomolecular pump 22 or the dry pump 24 of APC valve 21 with very high reliability as pressure measurement unit.
Fig. 7 relates to the general configuration figure of the vacuum flush system of the execution mode different with Fig. 5.As shown in FIG. 7, this vacuum flush system 200 is on four limits of elongated a little hexagon delivery unit 263, has the multichamber type vacuum flush system of 6 machining cells (vacuum plant) 261a～261f.The structure of each machining cell 261a～261f all with Fig. 1 in vacuum plant 1 be same.At each machining cell 261a～261f, connecting the MC305d～305i that is used for controlling vacuum chamber 2 internal pressures as module controller.Because these MC 305d～305i have and foregoing same 26S Proteasome Structure and Function, just omit explanation (with reference to Fig. 6).
In Fig. 7, base plate processing system 200 comprises that its plan view is 6 machining cell 261a～261f, loading unit 213 around this delivery unit 263 of hexagonal delivery unit 263, radial configuration, is configured between above-mentioned delivery unit 263 and the loading unit 213, connects two load locking rooms 243 and 244 of delivery unit 263 and loading unit 213.
That is to say that the side opposite with delivery unit 263 in load locking room 243 and 244 is provided with loading unit 213.Therefore, the side opposite with load locking room 243,244 at loading unit 213 is provided with 3 connectivity ports 220 that installation can be accommodated the front-open wafer box of wafer W (FOUP) 201.Front-open wafer box 201 is placed on the mounting table 202.
It is vacuum that delivery unit 263 and machining cell 261a～261f keep internal pressure, and delivery unit 263 links to each other with each machining cell 261a～261f with delivery unit 263 via vacuum gate valve 262 respectively.
In vacuum flush system 200, loading unit 213 pressure inside maintain atmospheric pressure, and delivery unit 263 pressure inside then maintain vacuum.For this reason, each load locking room 243,244 is comprising vacuum gate valve 249 with the portion of being connected of delivery unit 263 respectively, comprises big air gate type valve 250 at the connecting portion with loading unit 213 simultaneously, constitutes thus and can regulate the pre-conveying chamber of vacuum of its internal pressure.Each load-lock unit 243,244 has wafer mounting table 253, is used for being placed on the wafer of transition between loading unit 213 and the delivery unit 263 temporarily.
At the top of loading unit 213, be provided with HEPA filter (not shown), the peace and quiet air by this HEPA filter supplies in the loading unit 213 with the state that flows downward, and carries out sending into and taking out of wafer W under atmospheric peace and quiet air ambient.On the side of loading unit 213 1 ends, be provided with finder 216, carry out the location of wafer W at this.
In loading unit 213, be provided with wafer transport mechanism 204, carry out that wafer W is taken out with respect to sending into of front-open wafer box 201 and wafer W with respect to the taking-up of sending into of load-lock unit 243,244.This wafer transport mechanism 204 has the structure of multi-joint arm, is placing wafer W in the portion of the picking up (not shown) of its front end it is carried.
Vacuum flush system 200 comprises the long limit that is configured in loading unit 213 user interface 288 to an end.User interface 288 has input part (keyboard) and by (LCD: the display part (monitor) of Gou Chenging liquid crystal display), this display part shows the operate condition of each structure important document of vacuum flush system 200 such as LCD.
An opposite side that loading unit 213 is clipped in the finder 216 between them be equipped with IM (the integral measuring instrument: Integrated Metrology) 217.This IM217 is used for holding exactly CD (critical dimension: deviation Critical Dimention) or the measurement section of thickness deviations such as gate insulating film, capacity insulating film.Wafer mounting table 221 and transducer 222 in IM217, be equipped with.As transducer 222, under such as the situation of measuring the CD value, Critical DimentionMeasurement Scanning Electron Microscope) or electron beam holographic etc. except the optical measurement that can use the figure processing dimension that is used for measuring on the wafer W, can also use CD-SEM (critical dimension measurement scanning electron microscopy:.Under the situation of carrying out film thickness measuring, can use x-ray photoelectron spectroscopy apparatus (XPS), auger electrons spectroscopy apparatus (AES), vacuum ultraviolet (VUV) ellipsograph etc. as transducer 222.
Side at loading unit 213 outfit front-open wafer boxes 201 is provided with particle detection portion 218.This particle detection portion 218 is the parts that detect particle (particulate) on the wafer W surface, has wafer mounting table 223 and based on the optical measurement 224 such as scattered light detection mode, optical imagery manner of comparison etc.
Carry out the pressure control in the vacuum chamber 2 of integral body control in the vacuum flush system 200 or machining cell 261a～261f by control part 30 (with reference to Fig. 1).The structure of control part 30 is according to making in standard illustrated in fig. 6, just having omitted explanation at this.
In the vacuum flush system 200 of structure like this, the wafer W that is formed with watermark can be sent into any one among machining cell 261a～261f, carry out processing such as etching.At first, by the wafer transport mechanism 204 in the loading unit 213 that remains under the atmospheric peace and quiet air ambient, take out a slice wafer W from any one front-open wafer box 201 and it is sent into the finder 216 wafer W is located.
Then, wafer W can be sent into any one in the load-lock unit 243,244, after in this load-lock unit, vacuumizing, will be by conveying arm unit 268 in the wafer W in this load-lock unit, be sent in any one vacuum chamber among processing module 261a～261f by delivery unit 263, carry out processing such as etching.After this, by conveying arm unit 268 wafer W is sent in the load-lock unit 243,244 any one again, treat wherein to return to after the atmospheric pressure, the wafer W of being taken out in the load-lock unit 243,244 by the wafer transport mechanism in the loading unit 213 204 is housed in it in front-open wafer box 201 any one.A collection of wafer W is carried out such operation, finish to a collection of processing.
According to the as above vacuum flush system 200 of structure, owing to comprised the MC305d～305i that under domination, controls as the EC301 that sums up control part, for example based on the pressure in the vacuum chamber that measures by pressure gauge 25 2, can control the switching of action/non-action etc. of admittance adjustment, turbomolecular pump 22 or the dry pump 24 of APC valve 21 with very high reliability as pressure measurement unit.
Suitably in above-mentioned vacuum plant 1, measure the method for leak rate below with reference to Fig. 8～18 explanations.As mentioned above, in vacuum plant 1, adopted the structure that is not equipped with gate valve in the upstream of turbomolecular pump 22.The gate valve in past for vacuum chamber 2 sealing and be equipped with, but in the vacuum plant 1 of Fig. 1, can carry out the measurement of leak rate with following method when carrying out the measurement of leak rate.
＜the first execution mode 〉
Fig. 8 is illustrated in the flow chart that is carried out the control sequence under the situation that leak rate measures by the leak rate method of measurement of first execution mode, Fig. 9 is the figure of exhaust portion operate condition when representing to carry out in the first embodiment leak rate and measuring, the expression valve of white is in opened state, and the valve of blacking represents to be in closure state, and the valve of mesh point means between open and closure and takes certain aperture (Figure 12,15 and 18 is same).In the following description, for convenience, will be designated as valve V1 as the valve 23 of second valve.
In the present embodiment, be provided with from the circulating line 26 that tell, that under connected state, connecting vacuum chamber 2 of the exhaust passage between turbomolecular pump 22 and valve V1 (valve 23), measure leak rate because the circulation of gas leakage causes vacuum chamber 2 interior pressure to rise by monitoring.
To step S5, is the order with the admittance that decides APC valve 21 from the step S1 of Fig. 8, be the preparation order of measuring before the leak rate from step S6 to step S8, and step S9 is the order of leak rate measurement to step S14.
In the present embodiment, as the state that detects before leaking, turbomolecular pump 22 and dry pump 24 are in starting state, APC valve 21 standard-sized sheets, and valve V1 is open, valve V2 closure, valve V3 is open.
At first in step S1, valve-off V3.In vacuum chamber 2, import from gas supply source 12 with preset flow rate then such as N
2Deng gas (step S2).In step S3, the aperture of regulating APC valve 21 makes the pressure that reaches regulation in the vacuum chamber 2.In step S4, whether pressure in the aperture of regulating judges vacuum chamber 2 and flow be stable then.As a result, under the stable inadequately situation of pressure and flow (No), it is stable up to them to continue gaging pressure and flow.
In addition, pressure and flow in step S4 in judging vacuum chamber 2 are under the situation of stable (Yes), and the aperture of APC valve 21 under the storage in step S5 is such as the position A as the valve body position.
In step S6, in case APC valve 21 standard-sized sheets just stop to import N from gas supply source 12 in the step S7 that follows
2Gas etc.Under this state, the pressure P 1 in the monitoring vacuum chamber 2 judges in step S8 whether pressure P 1 reaches below the setting.The result works as judgement pressure P 1 not under the situation of (No) below the setting, just keeps the halted state that gas imports, and reaches below the setting until pressure P 1.And when in step S8, judging pressure P 1 under the situation of (Yes) below the setting, the aperture of APC valve 21 is adjusted to the position A (step S9) that stores in above-mentioned steps S5.In step S10, closure valve V1 opens valve V2 as shown in Figure 9, and gas is imported circulating line 26 then.In step S11, standby reaches stable until gas circulation, after this begins to measure the pressure P 1 in the vacuum chamber 2 in step S12.In step S13, judge whether to begin to have passed through the predefined time from the measurement of step S12, there be not under the situation of process (No) to proceed to measure.And judge in step S13 and passed through under the situation of setting-up time (Yes) that the pressure rate of rise in Measuring Time calculates leak rate (step S14).
By so handling, the pressure in the measured vacuum chamber 2 demonstrates variation as shown in Figure 10.In Figure 10, provided the pressure changing in the vacuum chamber 2 that in the vacuum chamber 2 of Fig. 1, is equipped with under the APC valve use accumulative measurement situation with gate valve function together.As can be seen from Figure 10, in making first execution mode of gas circulation gaging pressure, it is linear that the pressure in the vacuum chamber 2 rises.Can confirm that the slope of this straight line is different with the result who measures based on accumulative, but the correction factor by precomputing can be calculated actual leak rate by the vacuum chamber 2 interior pressure gauges that the leak rate method of measurement of first execution mode is measured.
＜the second execution mode 〉
Figure 11 is illustrated in the flow chart of measuring the control sequence under the situation of leak rate with the leak rate method of measurement of second execution mode.Figure 12 is the figure that is illustrated in the exhaust portion operate condition when carrying out the leak rate measurement in second execution mode.In the present embodiment, on the pipeline between turbomolecular pump 22 and the valve V1 (valve 23) pressure gauge 27 is housed, by the back pressure of monitoring turbomolecular pump 22, promptly the pressure P 2 in the pipeline is measured leak rate between turbomolecular pump 22 and the valve V1.
Is that leak rate is measured preceding preparation order from the step S21 of Figure 11 to step S22, is the measuring sequence of leak rate to step S27 from step S23.
In the present embodiment, as the state before the leak detection, turbomolecular pump 22 and dry pump 24 are in starting state, APC valve 21 standard-sized sheets, and valve V1 opens, and valve V3 also opens.
Valve-off V3 in step S21 at first.The pressure P 1 of monitoring in the vacuum chamber 2 in step S22 then judges that pressure P 1 is whether below setting.The result is judging pressure P 1 not under the situation of (No) below the setting, and further decompression reaches below the setting until pressure P 1.And in step S22, judge pressure P 1 under the situation of (Yes) below the setting, and as shown in Figure 12, valve-off V1 in step S23.In step S24, standby pressure in the pipeline between turbomolecular pump 22 and valve V1 reaches stable, the measurement of initiation pressure P2 in step S25 after this then.In step S26, judge from the measurement of step S25 to begin whether to pass through the predefined time then, do not having to proceed measurement through under the situation of (No).And be judged as under the situation of having passed through setting-up time (Yes) at step S26, calculate leak rate (step S27) from the pressure rate of rise in Measuring Time.
Figure 13 is illustrated in because different flow control components 10 shelters from gas, the leak rate in the test is set in the situation downforce P2 passing situation in time of 0.02mL/min (sccm), 0.2mL/min (sccm), 0.4mL/min (sccm) and 0.6mL/min (sccm) respectively.The measured value that demonstrates the pressure P 2 under each leak rate is all passed according to substantial linear separately.Thereby pass through the back pressure in the discharge directions downstream of monitoring turbomolecular pump 22, just can relatively grasp leak rate.
＜the three execution mode 〉
Figure 14 is the flow chart of expression with the control sequence under the situation of the leak rate method of measurement measurement leak rate of the 3rd execution mode.Figure 15 is the figure that is illustrated in the state of the exhaust portion when carrying out the leak rate measurement in the 3rd execution mode.In the present embodiment, stop, rising, measure leak rate with the pressure that begins under the state that vacuumizes in 24 pairs of vacuum chambers 2 of dry pump to monitor in the vacuum chamber 2 from turbomolecular pump 22.
Being the preparation order of measuring before the leak rate from the step S31 of Figure 14 to step S32, is the measuring sequence of leak rate to step S37 from step S33.
In the present embodiment, as the state that carries out before the leak detection, turbomolecular pump 22 stops, and dry pump 24 is in starting state, APC valve 21 standard-sized sheets, and valve V1 is open, and valve V3 is also open.
At first in step S31, valve-off V3.Then in step S32, the pressure P 1 in the monitoring vacuum chamber 2 judges that pressure P 1 is whether below setting.The result is judging pressure P 1 not under the situation of (No) below the setting, and further decompression reaches below the setting until pressure P 1.And in step S32, judge pressure P 1 under the situation of (yes) below the setting, and as shown in Figure 15, valve-off V1 in step S33.In step S34, the pressure of standby in vacuum chamber 2 reaches stable then, beginning gaging pressure P1 in step S35.In the present embodiment, monitoring vacuum chamber 2, APC valve 21, the pressure oscillation of turbomolecular pump 22 in whole volumes of the pipeline of valve V1.
In step S36, judge from the measurement of step S35 to begin whether to have passed through the time of preestablishing, do not having to proceed measurement through under the situation of (No).And in step S36, judge under the situation of having passed through setting-up time (Yes), the pressure rate of rise in Measuring Time calculates leak rate (step S37).
What represent among Figure 16 is that (straight line a) for the situation of being passed in time by the pressure P 1 that such processing is measured.In this Figure 16, provide the APC valve 21 of the vacuum plant 1 that replaces Fig. 1 simultaneously and be equipped with the APC valve that gate valve mechanism is housed, vacuumize the measurement result based on accumulative (built-up) of the situation (straight line c) of the complete closure of APC that gate valve mechanism is housed after the back vacuumizes in the closed fully situation (straight line b) of the APC that gate valve mechanism is housed with turbomolecular pump 22 by dry pump 24.
Demonstrate from Figure 16, straight line a～c is respectively that the pressure when beginning to measure is different and to be equivalent to the slope of each straight line of pressure rate of rise roughly close, and straight line a is 0.143, and straight line b is 0.149, and straight line c is 0.170.In other words, the leak rate method of measurement of the 3rd execution mode and accumulative (straight line b, c) have reflected leak rate equally.Thereby can confirm, use the leak rate method of measurement of this 3rd execution mode can measure actual leak rate.
＜the four execution mode 〉
Figure 17 is the flow chart of expression with control sequence under the situation of the leak rate method of measurement measurement leak rate of the 4th execution mode.Figure 18 is the figure that is illustrated in exhaust portion state when carrying out the leak rate measurement in the 4th execution mode.In the present embodiment, APC valve 21 is being set under the state of any admittance, by starting turbomolecular pump 22, the pressure of measuring in the vacuum chamber 2 is measured leak rate.
From the step S41 of Figure 18 to step S45 is with the order that decides APC valve 21 admittances, is the preparation order before leak rate is measured from step S46 to step S48, and is the order of measuring leak rate from step S49 to step S52.
In the present embodiment, as the state before the leak detection, turbomolecular pump 22 and dry pump 24 are in starting state, APC valve 21 standard-sized sheets, and valve V1 is open, and valve V3 is also open.
Valve-off V3 in step S41 at first.In vacuum chamber 2, import from gas supply source 12 with preset flow rate then such as N
2Deng gas (step S42).In step S43, regulate the aperture of APC valve 21, make the pressure that reaches regulation in the vacuum chamber 2.In step S44, judge whether pressure and the flow in the vacuum chamber 2 be stable.The result continues gaging pressure and flow until reaching stable under the stable inadequately situation of pressure and flow.
And pressure and the flow judged in step S44 in the vacuum chamber 2 are under the situation of stable (Yes), in step S45 this aperture (such as position A) are stored.
In step S46, in case APC valve 21 standard-sized sheets just stop to import N from gas supply source 12 in the step S47 that follows
2Deng gas.The pressure P 1 of monitoring in the vacuum chamber 2 under this state judges that in step S48 pressure P 1 is whether below setting.The result keeps the state that stops to import gas judging pressure P 1 not under the situation of (No) below the setting, reaches below the setting until pressure P 1.And in step S48, judge pressure P 1 under the situation of (Yes) below the setting, the aperture of APC valve 21 is adjusted to the A place, position (step S49) that stores in above-mentioned steps S45.In step S50, standby is stable up to pressure P 1 then, measures the pressure P 1 in the vacuum chamber 2 then in step S51.
In the present embodiment, calculate leak rate (step S52) among step S52 from the value of the pressure P 1 that measures, by measured above-mentioned pressure P 1 and above-mentioned vacuum chamber 2 internal pressures when the afore mentioned rules aperture that precomputes (position A) are compared, extrapolate leak rate.
Such as the pressure rate of rise in vacuum chamber 2 is 0.13[Pa/min (1 * 10
-3Torr/min)], the volume of vacuum chamber is 50[L] situation under, the leak rate on the standard is 6.58 * 10
-2[mL/min (sccm)].When this leak rate of imagination, when the admittance of APC valve 21 divides 10 sections to be set in 1～10L/sec, calculate the force value of vacuum chamber under each admittance according to table 1.
Table 1
| Admittance [L/s] | Vacuum chamber internal pressure P1[Pa] | |
| 1 | 0.0111 | 8.33×10
-4 |
| 2 | 0.0056 | 4.17×10
-4 |
| 3 | 0.0037 | 2.78×10
-4 |
| 4 | 0.0028 | 2.08×10
-4 |
| 5 | 0.0022 | 1.67×10
-4 |
| 6 | 0.0019 | 1.39×10
-4 |
| 7 | 0.0016 | 1.19×10
-4 |
| 8 | 0.0014 | 1.04×10
-4 |
| 9 | 0.0012 | 9.26×10
-5 |
| 10 | 0.0011 | 8.33×10 -5Torr |
Thereby in such vacuum chamber 2, because in the aperture that APC valve 21 is set in regulation, for example making its admittance is under the 5L/ situation of second, the pressure in the vacuum chamber 2 should be 0.0022Pa (1.67 * 10
-4Torr), can extrapolate actual leak rate from above-mentioned pressure P 1.In this 4th execution mode,, hold the method for leak rate by its size, so preferably set the admittance of APC valve 21 littler (promptly reducing aperture) owing to be a kind of pressure of foundation of measuring in the vacuum chamber 2.Thereby preferably the admittance with APC valve 21 is set in such as in 1～10L/ scope of second, more preferably is set in 1～5L/ scope of second.
As above can confirm, even in the vacuum plant 1 that is not equipped with gate valve (the APC valve of gate valve mechanism is housed), just can measure leak rate by the processing of above-mentioned execution mode 1～4.
The present invention does not limit in the above-described embodiment, can carry out variation miscellaneous.Such as in the execution mode of Fig. 1, enumerated the example of parallel plate-type plasma-etching apparatus, but also be not limited to this, also be suitable for using various plasma-etching apparatus such as the magnetron RIE plasma-etching apparatus of permanent magnet or induction coupled mode plasma-etching apparatus.The present invention also is not limited to Etaching device, all is suitable for such as the various semiconductor-fabricating devices that require to handle under high vacuum state at film formation device etc.
The storage medium of the program coding by will recording the software of realizing above-mentioned execution mode function, the CPU by EC301 reads and moves the program coding that is stored in the storage medium, has also just realized purpose of the present invention.In the case, just realized above-mentioned execution mode, and the storage medium of this program coding and this program coding of storage has just constituted the present invention from the program coding self that storage medium reads.As the storage medium that is used to provide program coding, can use such as floppy disk, hard disk, magneto-optical disk, CD-ROM, CD-R, CD-RW, DVD-ROM, DVD-RAM, DVD-RW, DVD+RW, tape, non-volatile type and store card, ROM etc.Also can pass through the network download program coding.
Particularly move the program coding that reads by CPU, not only realize the function of above-mentioned execution mode, also comprise instruction based on this program coding, the OS that is working on CPU (operating system) etc. carries out the processing of part or all reality, handles the situation that also can realize above-mentioned execution mode function by this.
In addition, also comprise following situation: behind the memory that the program coding that reads from storage medium is had during being written in function expanding plate that is inserted into EC301 or the function expanding unit that is connected EC301, instruction according to this program coding, this function expanding plate or CPU that the function expanding unit had etc. carry out an one of actual treatment or all, power realizes the function of above-mentioned execution mode from here.
Further, the mode of said procedure coding is by the program coding of object coding, interpreter operation, supply with operating system script data modes such as (script data) and constitute all and be fine.
Claims (18)
1. the method for measurement of a leak rate, this method is to measure the leak rate method of measurement of leak rate of the vacuum plant of following formation, this vacuum plant comprises: first exhaust pump that inside accommodates handled object and the vacuum chamber of handling, be connected with described vacuum chamber through first valve as the admittance variable valve, compare second valve that is connected the discharge directions downstream with described first exhaust pump, it is characterized in that
Be provided with the circulation canal that comes out from the exhaust passage branch between described first exhaust pump and described second valve, be connected with described vacuum chamber with connected state,
At the admittance of described first valve setpoint in regulation, under the state of described second valve closes, by described circulation canal gas is circulated to described vacuum chamber by described first exhaust pump, the pressure in the described vacuum chamber is monitored.
2. the method for measurement of a leak rate, this method is to measure the leak rate method of measurement of leak rate of the vacuum plant of following formation, this vacuum plant comprises: first exhaust pump that inside accommodates handled object and the vacuum chamber of handling, be connected with described vacuum chamber through first valve as the admittance variable valve with compare second valve that is connected in the downstream of discharge directions with described first exhaust pump
It is characterized in that at described first valve wide open, under the state of described first exhaust pump action, described second valve closing is monitored the pressure in the exhaust passage between first exhaust pump and described second valve.
3. the method for measurement of a leak rate, this method is to measure the leak rate method of measurement of leak rate of the vacuum plant of following formation, this vacuum plant comprises: first exhaust pump that inside accommodates handled object and the vacuum chamber of handling, be connected with described vacuum chamber through first valve as the admittance variable valve, second exhaust pump that is connected with described first exhaust pump through second valve
It is characterized in that, at described first valve wide open, under the state that described first exhaust pump stops, by described second exhaust pump with after reducing pressure below the authorized pressure in the described vacuum chamber, described second valve closes is monitored the pressure in the described vacuum chamber under this state.
4. the method for measurement of a leak rate, this method is to measure the leak rate method of measurement of leak rate of the vacuum plant of following formation, this vacuum plant comprises: second valve in first exhaust pump that inside accommodates handled object and the vacuum chamber of handling, be connected with described vacuum chamber through first valve as the admittance variable valve and the discharge directions downstream that is connected described first exhaust pump
It is characterized in that,, and under the state of described second valve open,, measure the pressure in the described vacuum chamber the admittance of described first valve setpoint in regulation in described first exhaust pump action.
5. leak rate method of measurement as claimed in claim 4 is characterized in that, the described vacuum chamber pressure inside value that precomputes during for the admittance of regulation by the described pressure that will be measured to and described first valve compares, and extrapolates leak rate.
6. leak rate method of measurement as claimed in claim 4 is characterized in that, the admittance of described regulation is at 10L/ below second.
7. a vacuum plant is characterized in that, this device comprises:
The vacuum chamber of accommodating handled object in inside and handling;
First exhaust pump is connected with described vacuum chamber through first valve as the admittance variable valve, and described first valve does not have gate valve mechanism;
Compare second valve that is connected the discharge directions downstream with described first exhaust pump; With
Measure the control part that the mode of the leakage rate of described vacuum plant is controlled to close second valve.
8. vacuum plant as claimed in claim 7 is characterized in that, this device also comprises with described second valve compares second exhaust pump that is connected the discharge directions downstream.
9. vacuum plant as claimed in claim 8 is characterized in that, described first exhaust pump is a turbomolecular pump, and described second exhaust pump is a dry pump.
10. vacuum plant as claimed in claim 7, it is characterized in that, described first valve valve as described below: will omit a pair of plate balanced configuration of semicircular in shape and make valve body, with the limit part of the linearity of each plate as pivot, thereby regulate admittance changeably by it being rotated regulate aperture.
11. vacuum plant as claimed in claim 7 is characterized in that, this device also comprises the pressure gauge on the exhaust passage that is installed between described first exhaust pump and described second valve, be used for the pressure in the described exhaust passage is monitored,
Described control part is controlled, and makes: described second valve closing, and open fully at described first valve, under the condition of the described first exhaust pump work, utilize described pressure gauge, the pressure in the described exhaust passage is monitored.
12. vacuum plant as claimed in claim 8 is characterized in that, this device also comprises the pressure gauge that is used to measure the pressure in the described vacuum chamber,
Described control part is controlled, make: utilize described second exhaust pump that the pressure of the inner space of described vacuum chamber is reduced pressure below the setting, close described second valve then, then, under the condition that described first valve is opened fully, described first exhaust pump stops, utilizing described pressure gauge that the pressure in the described vacuum chamber is monitored.
13. a vacuum plant is characterized in that, this device comprises:
The vacuum chamber of accommodating handled object in inside and handling;
First exhaust pump is connected with described vacuum chamber through first valve as the admittance variable valve, and described first valve does not have gate valve mechanism;
Compare second valve that is connected the discharge directions downstream with described first exhaust pump; With
Circulation canal that tell, that under connected state, be connected the exhaust passage between described first exhaust pump and described second valve with described vacuum chamber.
14. a vacuum plant is characterized in that,
This device is included in the vacuum chamber that inside is accommodated handled object and handled,
Connecting control part in described vacuum chamber, this control part is controlled according to the mode of carrying out the described leak rate method of measurement of claim 1.
15. a vacuum flush system is characterized in that,
This vacuum flush system comprises the described vacuum plant of a plurality of claims 14,
This vacuum flush system has blanket control part, is connected with described control part they to be summed up and described whole vacuum flush system is controlled.
16. a vacuum plant is characterized in that,
This device is included in the vacuum chamber that inside is accommodated handled object and handled,
Connecting control part in described vacuum chamber, this control part is controlled according to the mode of carrying out the described leak rate method of measurement of claim 2.
17. a vacuum plant is characterized in that,
This device is included in the vacuum chamber that inside is accommodated handled object and handled,
Connecting control part in described vacuum chamber, this control part is controlled according to the mode of carrying out the described leak rate method of measurement of claim 3.
18. a vacuum plant is characterized in that,
This device is included in the vacuum chamber that inside is accommodated handled object and handled,
Connecting control part in described vacuum chamber, this control part is controlled according to the mode of carrying out the described leak rate method of measurement of claim 4.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005074714 | 2005-03-16 | ||
| JP2005074714 | 2005-03-16 | ||
| JP2005175909 | 2005-06-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1835200A CN1835200A (en) | 2006-09-20 |
| CN100517626C true CN100517626C (en) | 2009-07-22 |
Family
ID=37002887
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100083620A Expired - Fee Related CN100517626C (en) | 2005-03-16 | 2006-02-21 | Vacuum apparatus, method for measuring a leak rate thereof, program used in measuring the leak rate and storage medium storing the program |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100517626C (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101470044B (en) * | 2007-12-28 | 2010-09-08 | 中国航天科技集团公司第五研究院第五一〇研究所 | Method for measuring positive pressure leak hole leak rate |
| CN103426789A (en) * | 2012-05-24 | 2013-12-04 | 上海宏力半导体制造有限公司 | Device capable of detecting leakage state of adaptive pressure controller |
| CN103162914A (en) * | 2013-03-14 | 2013-06-19 | 上海和辉光电有限公司 | Method for controlling automatic detection of leakage rate of vacuum chamber |
| CN103335795B (en) * | 2013-07-02 | 2016-05-04 | 中国科学院光电研究院 | Vacuum seal dividing potential drop leakage rate measurement system and measuring method thereof |
| CN104949808B (en) * | 2014-03-24 | 2017-10-13 | 北京北方华创微电子装备有限公司 | A kind of leak rate detection method and system |
| CN103926945B (en) * | 2014-04-08 | 2017-02-15 | 上海华力微电子有限公司 | Cavity intelligent pressure control system and pressure control method of the same |
| CN105390362B (en) * | 2015-10-29 | 2017-06-23 | 上海华力微电子有限公司 | System and method for changing the O-ring on pressure-control valve |
| CN105887034A (en) * | 2016-06-07 | 2016-08-24 | 南京汇金锦元光电材料有限公司 | Multi-cathode magnetron sputtering interference control device and method |
| CN109224322B (en) * | 2018-10-29 | 2020-08-18 | 合肥中科离子医学技术装备有限公司 | Vacuum control system applied to proton treatment device |
| JP7151420B2 (en) * | 2018-11-27 | 2022-10-12 | 東京エレクトロン株式会社 | Gas supply device and gas supply method |
| CN109751219A (en) * | 2018-12-30 | 2019-05-14 | 珠海市广源信科技有限公司 | A kind of control includes the vacuum system of vacuum generator |
| JP7306300B2 (en) * | 2020-03-13 | 2023-07-11 | 株式会社島津製作所 | Estimator and vacuum valve |
| CN111579172B (en) * | 2020-05-18 | 2022-04-26 | 中国科学院微电子研究所 | Reaction chamber leakage monitoring method and device and semiconductor equipment system |
-
2006
- 2006-02-21 CN CNB2006100083620A patent/CN100517626C/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1835200A (en) | 2006-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100517626C (en) | Vacuum apparatus, method for measuring a leak rate thereof, program used in measuring the leak rate and storage medium storing the program | |
| US7472581B2 (en) | Vacuum apparatus | |
| US6916397B2 (en) | Methods and apparatus for maintaining a pressure within an environmentally controlled chamber | |
| KR101557522B1 (en) | Feeder for reducing gas pressure and cylinder cabinet, valve box, and substrate processing apparatus with the same | |
| EP1075023A1 (en) | Unprocessed material storing device and carry-in/out stage | |
| US20070010906A1 (en) | Apparatus and system for monitoring a substrate processing, program for monitoring the processing and storage medium storing same | |
| US20090060702A1 (en) | Method for transporting object to be processed in semiconductor manufacturing apparatus | |
| CN103125012B (en) | Base plate processing system | |
| JP5415583B2 (en) | Vacuum processing equipment | |
| US20200219744A1 (en) | Semiconductor manufacturing device | |
| US20020065616A1 (en) | Method for evaluating process chambers used for semiconductor manufacturing | |
| JP4606947B2 (en) | Leak rate measurement method, program used for leak rate measurement, and storage medium | |
| CN1767146A (en) | Substrate processing apparatus, pressure control method for substrate processing apparatus | |
| US8021513B2 (en) | Substrate carrying apparatus and substrate carrying method | |
| KR101116875B1 (en) | Vacuum processing apparatus | |
| KR102110244B1 (en) | Equipment Front End Module Retrofit Method For Nitrogen Supply | |
| JP5260981B2 (en) | Vacuum processing equipment | |
| KR20210007863A (en) | Substrate processing apparatus and storage medium | |
| KR20070075935A (en) | Vacuum pumping system of substrate processing apparatus and method of vacuum pumping transfer chamber using the same | |
| JP5042686B2 (en) | Plasma processing equipment | |
| US20230238253A1 (en) | Gas box with cross-flow exhaust system | |
| KR20030038474A (en) | System and method for inhibiting motion of semiconductor wafers in a variable-pressure chamber | |
| KR102658759B1 (en) | Training aids for education of wafer plasma process | |
| KR102409487B1 (en) | Control device for supplying analysis gas to load port for semiconductor wafer FOUP and control method thereof | |
| JP6788072B2 (en) | Substrate processing equipment and substrate processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CI02 | Correction of invention patent application |
Correction item: Priority Correct: 2005.06.16 JP 2005-175909 False: Lack of priority second Number: 38 Page: The title page Volume: 22 |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: PRIORITY; FROM: MISSING THE SECOND ARTICLE OF PRIORITY TO: 2005.6.16 JP 2005-175909 |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090722 Termination date: 20160221 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |