CN100514684C - 发光半导体器件和含有该发光半导体器件的装置 - Google Patents

发光半导体器件和含有该发光半导体器件的装置 Download PDF

Info

Publication number
CN100514684C
CN100514684C CNB2006100999800A CN200610099980A CN100514684C CN 100514684 C CN100514684 C CN 100514684C CN B2006100999800 A CNB2006100999800 A CN B2006100999800A CN 200610099980 A CN200610099980 A CN 200610099980A CN 100514684 C CN100514684 C CN 100514684C
Authority
CN
China
Prior art keywords
luminous
semiconductor device
light
fluorescent material
inverting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2006100999800A
Other languages
English (en)
Chinese (zh)
Other versions
CN1905226A (zh
Inventor
U·雷
K·赫恩
N·斯塔施
G·韦特
P·施洛特
R·施米特
J·施奈德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=7798103&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=CN100514684(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Siemens AG filed Critical Siemens AG
Publication of CN1905226A publication Critical patent/CN1905226A/zh
Application granted granted Critical
Publication of CN100514684C publication Critical patent/CN100514684C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/32257—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic the layer connector connecting to a bonding area disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
CNB2006100999800A 1996-06-26 1997-06-26 发光半导体器件和含有该发光半导体器件的装置 Expired - Lifetime CN100514684C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19625622.4 1996-06-26
DE19625622A DE19625622A1 (de) 1996-06-26 1996-06-26 Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
DE19638667.5 1996-09-20

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100917280A Division CN100565945C (zh) 1996-06-26 1997-06-26 发射射线的半导体芯片及包含该半导体芯片的装置

Publications (2)

Publication Number Publication Date
CN1905226A CN1905226A (zh) 2007-01-31
CN100514684C true CN100514684C (zh) 2009-07-15

Family

ID=7798103

Family Applications (9)

Application Number Title Priority Date Filing Date
CNB2005100917295A Expired - Lifetime CN100442555C (zh) 1996-06-26 1997-06-26 发射射线的半导体器件及包含该半导体器件的装置
CNB2006101016500A Expired - Lifetime CN100435369C (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CNB2006100999800A Expired - Lifetime CN100514684C (zh) 1996-06-26 1997-06-26 发光半导体器件和含有该发光半导体器件的装置
CN200610101629.0A Expired - Lifetime CN1893136B (zh) 1996-06-26 1997-06-26 发光半导体器件和含有该发光半导体器件的装置
CNB2006101016572A Expired - Lifetime CN100502066C (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CNB2005100917308A Expired - Lifetime CN100433382C (zh) 1996-06-26 1997-06-26 半导体器件外壳用的单独覆盖元件和含有覆盖元件的装置
CNB2006100999783A Expired - Lifetime CN100557833C (zh) 1996-06-26 1997-06-26 发光半导体器件和含有该发光半导体器件的装置
CNB2005100917280A Expired - Lifetime CN100565945C (zh) 1996-06-26 1997-06-26 发射射线的半导体芯片及包含该半导体芯片的装置
CN200610101860XA Expired - Lifetime CN1917240B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件

Family Applications Before (2)

Application Number Title Priority Date Filing Date
CNB2005100917295A Expired - Lifetime CN100442555C (zh) 1996-06-26 1997-06-26 发射射线的半导体器件及包含该半导体器件的装置
CNB2006101016500A Expired - Lifetime CN100435369C (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件

Family Applications After (6)

Application Number Title Priority Date Filing Date
CN200610101629.0A Expired - Lifetime CN1893136B (zh) 1996-06-26 1997-06-26 发光半导体器件和含有该发光半导体器件的装置
CNB2006101016572A Expired - Lifetime CN100502066C (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件
CNB2005100917308A Expired - Lifetime CN100433382C (zh) 1996-06-26 1997-06-26 半导体器件外壳用的单独覆盖元件和含有覆盖元件的装置
CNB2006100999783A Expired - Lifetime CN100557833C (zh) 1996-06-26 1997-06-26 发光半导体器件和含有该发光半导体器件的装置
CNB2005100917280A Expired - Lifetime CN100565945C (zh) 1996-06-26 1997-06-26 发射射线的半导体芯片及包含该半导体芯片的装置
CN200610101860XA Expired - Lifetime CN1917240B (zh) 1996-06-26 1997-06-26 具有发光变换元件的发光半导体器件

Country Status (2)

Country Link
CN (9) CN100442555C (de)
DE (1) DE19625622A1 (de)

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
KR100643442B1 (ko) 1996-06-26 2006-11-10 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 발광 변환 소자를 포함하는 발광 반도체 소자
DE19803936A1 (de) * 1998-01-30 1999-08-05 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung
DE19829197C2 (de) 1998-06-30 2002-06-20 Siemens Ag Strahlungsaussendendes und/oder -empfangendes Bauelement
DE19836943B9 (de) * 1998-08-17 2008-01-31 Osram Opto Semiconductors Gmbh Photolumineszenzschicht im optischen und angrenzenden Spektralbereichen
US6204523B1 (en) * 1998-11-06 2001-03-20 Lumileds Lighting, U.S., Llc High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range
DE19934126A1 (de) * 1999-07-23 2001-01-25 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Leuchtstoff für Lichtquellen und zugehörige Lichtquelle
EP2975912B1 (de) † 1999-11-18 2022-04-27 Signify North America Corporation Systeme zur erzeugung und modulierung von beleuchtungsbedingungen
EP1187228A4 (de) * 2000-02-09 2007-03-07 Nippon Leiz Corp Lichtquelle
US7101626B1 (en) 2000-02-23 2006-09-05 Osram Gmbh Photo-luminescence layer in the optical spectral region and in adjacent spectral regions
DE10032453A1 (de) * 2000-07-04 2002-01-24 Vishay Semiconductor Gmbh Strahlung emittierendes Bauelement
DE10109349B4 (de) * 2001-02-27 2012-04-19 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
DE10112542B9 (de) * 2001-03-15 2013-01-03 Osram Opto Semiconductors Gmbh Strahlungsemittierendes optisches Bauelement
US6841802B2 (en) 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
US7554258B2 (en) 2002-10-22 2009-06-30 Osram Opto Semiconductors Gmbh Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body
WO2004059750A1 (ja) 2002-12-25 2004-07-15 Japan Science And Technology Agency 発光素子装置、受光素子装置、光学装置、フッ化物結晶、フッ化物結晶の製造方法、およびルツボ
DE10261908B4 (de) * 2002-12-27 2010-12-30 Osa Opto Light Gmbh Verfahren zur Herstellung eines konversionslichtemittierenden Elementes auf der Basis von Halbleiterlichtquellen
DE10305093A1 (de) * 2003-02-07 2004-08-19 BSH Bosch und Siemens Hausgeräte GmbH Verfahren und Vorrichtung zur Bestimmung und Überwachung von Verunreinigungszuständen unterschiedlicher Flüssigkeiten
US7528421B2 (en) 2003-05-05 2009-05-05 Lamina Lighting, Inc. Surface mountable light emitting diode assemblies packaged for high temperature operation
US7633093B2 (en) 2003-05-05 2009-12-15 Lighting Science Group Corporation Method of making optical light engines with elevated LEDs and resulting product
US7157745B2 (en) 2004-04-09 2007-01-02 Blonder Greg E Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them
US7777235B2 (en) 2003-05-05 2010-08-17 Lighting Science Group Corporation Light emitting diodes with improved light collimation
WO2005043631A2 (en) * 2003-11-04 2005-05-12 Matsushita Electric Industrial Co.,Ltd. Semiconductor light emitting device, lighting module, lighting apparatus, and manufacturing method of semiconductor light emitting device
DE102005020695B4 (de) * 2004-04-30 2006-06-22 Optotransmitter-Umweltschutz-Technologie E.V. Vorrichtung zur Emission von Strahlung mit einstellbarer Spektraleigenschaft
DE102004042461A1 (de) 2004-08-31 2006-03-30 Novaled Gmbh Top-emittierendes, elektrolumineszierendes Bauelement mit Frequenzkonversionszentren
EP1808909A1 (de) 2006-01-11 2007-07-18 Novaled AG Elekrolumineszente Lichtemissionseinrichtung
DE102006015115A1 (de) * 2006-03-31 2007-10-04 Osram Opto Semiconductors Gmbh Elektronisches Modul und Verfahren zum Herstellen eines elektronischen Moduls
DE102007002003B4 (de) * 2007-01-08 2013-11-21 Johnson Controls Automotive Electronics Gmbh Anzeigeinstrument, insbesondere für ein Kraftfahrzeug und Verfahren zur Herstellung eines Anzeigeinstruments
DE102007057710B4 (de) * 2007-09-28 2024-03-14 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Bauelement mit Konversionselement
DE102008006988A1 (de) 2008-01-31 2009-08-06 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102008026841A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102008020882A1 (de) * 2008-04-25 2009-10-29 Ledon Lighting Jennersdorf Gmbh Lichtemittierende Vorrichtung und Verfahren zur Bereitstellung einer lichtemittierenden Vorrichtung mit vordefinierten optischen Eigenschaften des emittierten Lichts
DE102008025756B4 (de) 2008-05-29 2023-02-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiteranordnung
US7868340B2 (en) 2008-05-30 2011-01-11 Bridgelux, Inc. Method and apparatus for generating white light from solid state light emitting devices
DE102008045882A1 (de) * 2008-09-04 2010-03-11 Esw Gmbh Explosionskörperattrappe
DE102008057720A1 (de) * 2008-11-17 2010-05-20 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
KR100996446B1 (ko) * 2010-05-24 2010-11-25 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
DE102010026343A1 (de) * 2010-07-07 2012-03-29 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
DE102010047156A1 (de) * 2010-09-30 2012-04-05 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102011003969B4 (de) * 2011-02-11 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102011001928A1 (de) * 2011-04-08 2012-10-11 Lumitech Produktion Und Entwicklung Gmbh Farbkonversionselement sowie Lampe
DE102011101052A1 (de) 2011-05-09 2012-11-15 Heraeus Materials Technology Gmbh & Co. Kg Substrat mit elektrisch neutralem Bereich
DE102011078906A1 (de) * 2011-07-11 2013-01-17 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen halbleiterbauteils mittels spritzpressens
WO2013018041A1 (en) * 2011-08-04 2013-02-07 Koninklijke Philips Electronics N.V. Light converter and lighting unit comprising such light converter
CN103511995B (zh) * 2012-06-29 2016-04-20 展晶科技(深圳)有限公司 发光二极管灯条
TWI626395B (zh) * 2013-06-11 2018-06-11 晶元光電股份有限公司 發光裝置
JP6323650B2 (ja) * 2013-12-20 2018-05-16 セイコーエプソン株式会社 面発光レーザーおよび原子発振器
DE102014117764A1 (de) * 2014-12-03 2016-06-09 Osram Opto Semiconductors Gmbh Strahlungsemittierendes optoelektronisches Halbleiterbauteil und Verfahren zu dessen Herstellung
US10545378B2 (en) * 2015-02-04 2020-01-28 Merck Patent Gmbh Electro-optical switching element and display device
DE102018121324A1 (de) * 2018-08-31 2020-03-05 Osram Opto Semiconductors Gmbh Sol-Gele als Bindemittel für die Herstellung von Konversionselementen
CN111312881A (zh) * 2020-02-27 2020-06-19 盐城东山精密制造有限公司 一种一体成型led器件及其制作方法
DE102020206897A1 (de) 2020-06-03 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3316109A (en) * 1963-03-11 1967-04-25 Westinghouse Electric Corp Coating composition
US3440471A (en) * 1966-03-16 1969-04-22 Gen Telephone & Elect Electroluminescent cell matrix material of improved stability
JPS48102585A (de) * 1972-04-04 1973-12-22
US3774086A (en) * 1972-09-25 1973-11-20 Gen Electric Solid state lamp having visible-emitting phosphor at edge of infrated-emitting element
US4599537A (en) * 1982-04-30 1986-07-08 Shigeaki Yamashita IR light emitting apparatus with visible detection means
US4479886A (en) * 1983-08-08 1984-10-30 Gte Products Corporation Method of making cerium activated yttrium aluminate phosphor
IT1183061B (it) * 1984-07-31 1987-10-05 Zambon Spa Composti dotati di attivita'antiallergica
DE3804293A1 (de) * 1988-02-12 1989-08-24 Philips Patentverwaltung Anordnung mit einer elektrolumineszenz- oder laserdiode
DE9013615U1 (de) * 1990-09-28 1990-12-06 AEG Niederspannungstechnik GmbH & Co KG, 24534 Neumünster Elektrolumineszenz- oder Laserdiode
JPH04186679A (ja) * 1990-11-16 1992-07-03 Daido Steel Co Ltd 発光ダイオード
JP2666228B2 (ja) * 1991-10-30 1997-10-22 豊田合成株式会社 窒化ガリウム系化合物半導体発光素子
JPH05152609A (ja) * 1991-11-25 1993-06-18 Nichia Chem Ind Ltd 発光ダイオード
US5379186A (en) * 1993-07-06 1995-01-03 Motorola, Inc. Encapsulated electronic component having a heat diffusing layer
JPH0738150A (ja) * 1993-07-22 1995-02-07 Toshiba Corp 半導体発光装置
JPH0799345A (ja) * 1993-09-28 1995-04-11 Nichia Chem Ind Ltd 発光ダイオード
JPH07176794A (ja) * 1993-12-17 1995-07-14 Nichia Chem Ind Ltd 面状光源
CN2184257Y (zh) * 1994-02-21 1994-11-30 中国科学院半导体研究所 半导体光发射与探测耦合组件
JP3116727B2 (ja) * 1994-06-17 2000-12-11 日亜化学工業株式会社 面状光源
CN1108819A (zh) * 1994-10-26 1995-09-20 欧姆龙株式会社 半导体发光器件及使用半导体发光器件的光学装置

Also Published As

Publication number Publication date
CN1738067A (zh) 2006-02-22
DE19625622A1 (de) 1998-01-02
CN100435369C (zh) 2008-11-19
CN1913183A (zh) 2007-02-14
CN1983651A (zh) 2007-06-20
CN1917240B (zh) 2012-05-23
CN100433382C (zh) 2008-11-12
CN100565945C (zh) 2009-12-02
CN100557833C (zh) 2009-11-04
CN1893136B (zh) 2014-03-12
CN1881637A (zh) 2006-12-20
CN1905226A (zh) 2007-01-31
CN100502066C (zh) 2009-06-17
CN1722485A (zh) 2006-01-18
CN100442555C (zh) 2008-12-10
CN1722486A (zh) 2006-01-18
CN1893136A (zh) 2007-01-10
CN1917240A (zh) 2007-02-21

Similar Documents

Publication Publication Date Title
CN100514684C (zh) 发光半导体器件和含有该发光半导体器件的装置
CN1534802B (zh) 具有发光变换元件的发光半导体器件
JP5630952B6 (ja) 半導体発光素子

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: OSRAM OPTO SEMICONDUCTORS GMBH + CO. OHG

Free format text: FORMER NAME: SIEMENS AG

CP01 Change in the name or title of a patent holder

Address after: Regensburg, Germany

Patentee after: Osram Opto Semiconductors GmbH & Co. OHG

Address before: Regensburg, Germany

Patentee before: Siemens AG

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20090715