CN100481319C - 用于高k介电材料的界面层 - Google Patents

用于高k介电材料的界面层 Download PDF

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Publication number
CN100481319C
CN100481319C CNB2005800238837A CN200580023883A CN100481319C CN 100481319 C CN100481319 C CN 100481319C CN B2005800238837 A CNB2005800238837 A CN B2005800238837A CN 200580023883 A CN200580023883 A CN 200580023883A CN 100481319 C CN100481319 C CN 100481319C
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layer
germanium
exposed surface
silicon
germanium layer
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CNB2005800238837A
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Chinese (zh)
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CN1985352A (zh
Inventor
肖恩·G·托马斯
怕普·D·马尼尔
维达·依尔德瑞姆
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NXP USA Inc
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Freescale Semiconductor Inc
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28255—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor belonging to Group IV and not being elemental silicon, e.g. Ge, SiGe, SiGeC
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    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
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    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
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    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
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    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)
CNB2005800238837A 2004-07-30 2005-06-16 用于高k介电材料的界面层 Expired - Fee Related CN100481319C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/903,841 2004-07-30
US10/903,841 US7320931B2 (en) 2004-07-30 2004-07-30 Interfacial layer for use with high k dielectric materials

Publications (2)

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CN1985352A CN1985352A (zh) 2007-06-20
CN100481319C true CN100481319C (zh) 2009-04-22

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CNB2005800238837A Expired - Fee Related CN100481319C (zh) 2004-07-30 2005-06-16 用于高k介电材料的界面层

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US (1) US7320931B2 (enExample)
JP (1) JP2008508719A (enExample)
KR (1) KR20070044441A (enExample)
CN (1) CN100481319C (enExample)
TW (1) TW200625657A (enExample)
WO (1) WO2006023027A1 (enExample)

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
US7399666B2 (en) * 2005-02-15 2008-07-15 Micron Technology, Inc. Atomic layer deposition of Zr3N4/ZrO2 films as gate dielectrics
US7498247B2 (en) 2005-02-23 2009-03-03 Micron Technology, Inc. Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics
US8110469B2 (en) * 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US20070161214A1 (en) * 2006-01-06 2007-07-12 International Business Machines Corporation High k gate stack on III-V compound semiconductors
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
US8330381B2 (en) * 2009-05-14 2012-12-11 Ilumisys, Inc. Electronic circuit for DC conversion of fluorescent lighting ballast
US8268683B2 (en) * 2009-06-12 2012-09-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing interfacial layer thickness for high-K and metal gate stack
EP2270840B1 (en) * 2009-06-29 2020-06-03 IMEC vzw Method for manufacturing an III-V material substrate and the substrate thereof
CN102509734A (zh) * 2011-11-08 2012-06-20 复旦大学 一种利用ald制备锗基mos电容的方法
CN113823555B (zh) * 2021-09-03 2024-06-07 合肥安德科铭半导体科技有限公司 一种在绝缘体上制备锗薄膜的方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
US5825055A (en) * 1992-05-01 1998-10-20 Texas Instruments Incorporated Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
CN1042775C (zh) * 1996-06-21 1999-03-31 河北工业大学 用锗进行硅/硅键合的方法及其制备的硅器件衬底片
US6593625B2 (en) * 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US20030228744A1 (en) * 2002-04-26 2003-12-11 Michihisa Kohno Manufacturing method of semiconductor device

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DE19533313A1 (de) * 1995-09-08 1997-03-13 Max Planck Gesellschaft Halbleiterstruktur für einen Transistor
US6800881B2 (en) * 1996-12-09 2004-10-05 Ihp Gmbh-Innovations For High Performance Microelectronics/Institut Fur Innovative Mikroelektronik Silicon-germanium hetero bipolar transistor with T-shaped implantation layer between emitter and emitter contact area
US6723621B1 (en) * 1997-06-30 2004-04-20 International Business Machines Corporation Abrupt delta-like doping in Si and SiGe films by UHV-CVD
EP0926739A1 (en) * 1997-12-24 1999-06-30 Texas Instruments Incorporated A structure of and method for forming a mis field effect transistor
FR2783254B1 (fr) * 1998-09-10 2000-11-10 France Telecom Procede d'obtention d'une couche de germanium monocristallin sur un substrat de silicium monocristallin,et produits obtenus
US6184072B1 (en) 2000-05-17 2001-02-06 Motorola, Inc. Process for forming a high-K gate dielectric
JP3748218B2 (ja) * 2001-09-10 2006-02-22 日本電信電話株式会社 Ｍｉｓ型半導体装置の製造方法
US20030111678A1 (en) 2001-12-14 2003-06-19 Luigi Colombo CVD deposition of M-SION gate dielectrics
US6696332B2 (en) 2001-12-26 2004-02-24 Texas Instruments Incorporated Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing
US6620713B2 (en) 2002-01-02 2003-09-16 Intel Corporation Interfacial layer for gate electrode and high-k dielectric layer and methods of fabrication
US6621114B1 (en) 2002-05-20 2003-09-16 Advanced Micro Devices, Inc. MOS transistors with high-k dielectric gate insulator for reducing remote scattering
US6995430B2 (en) 2002-06-07 2006-02-07 Amberwave Systems Corporation Strained-semiconductor-on-insulator device structures
US6617639B1 (en) 2002-06-21 2003-09-09 Advanced Micro Devices, Inc. Use of high-K dielectric material for ONO and tunnel oxide to improve floating gate flash memory coupling

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5825055A (en) * 1992-05-01 1998-10-20 Texas Instruments Incorporated Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer
CN1042775C (zh) * 1996-06-21 1999-03-31 河北工业大学 用锗进行硅/硅键合的方法及其制备的硅器件衬底片
US6593625B2 (en) * 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US20030228744A1 (en) * 2002-04-26 2003-12-11 Michihisa Kohno Manufacturing method of semiconductor device

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KR20070044441A (ko) 2007-04-27
WO2006023027A1 (en) 2006-03-02
TW200625657A (en) 2006-07-16
US20060022283A1 (en) 2006-02-02
US7320931B2 (en) 2008-01-22
CN1985352A (zh) 2007-06-20
JP2008508719A (ja) 2008-03-21

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