CN100450647C - 辉光放电产生的化学气相沉积 - Google Patents

辉光放电产生的化学气相沉积 Download PDF

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Publication number
CN100450647C
CN100450647C CNB2004800250618A CN200480025061A CN100450647C CN 100450647 C CN100450647 C CN 100450647C CN B2004800250618 A CNB2004800250618 A CN B2004800250618A CN 200480025061 A CN200480025061 A CN 200480025061A CN 100450647 C CN100450647 C CN 100450647C
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CN
China
Prior art keywords
electrode
gas
glow discharge
original silica
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2004800250618A
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English (en)
Chinese (zh)
Other versions
CN1845797A (zh
Inventor
A·M·加贝尔尼克
C·兰伯特
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Dow Global Technologies LLC
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Dow Global Technologies LLC
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Publication of CN1845797A publication Critical patent/CN1845797A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/4697—Generating plasma using glow discharges

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Laminated Bodies (AREA)
  • Silicon Compounds (AREA)
CNB2004800250618A 2003-09-09 2004-09-07 辉光放电产生的化学气相沉积 Expired - Fee Related CN100450647C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US50147703P 2003-09-09 2003-09-09
US60/501,477 2003-09-09

Publications (2)

Publication Number Publication Date
CN1845797A CN1845797A (zh) 2006-10-11
CN100450647C true CN100450647C (zh) 2009-01-14

Family

ID=34619293

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800250618A Expired - Fee Related CN100450647C (zh) 2003-09-09 2004-09-07 辉光放电产生的化学气相沉积

Country Status (9)

Country Link
US (1) US20060222779A1 (https=)
EP (1) EP1663518A2 (https=)
JP (1) JP2007505219A (https=)
KR (1) KR20060082858A (https=)
CN (1) CN100450647C (https=)
BR (1) BRPI0413769A (https=)
CA (1) CA2537075A1 (https=)
MX (1) MXPA06002679A (https=)
WO (1) WO2005049228A2 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2582286A1 (en) * 2004-10-29 2006-05-11 Dow Global Technologies Inc. Abrasion resistant coatings by plasma enhanced chemical vapor deposition
JP2009538989A (ja) 2006-05-30 2009-11-12 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． パルス化大気圧グロー放電を使用する堆積の方法及び装置
US8338307B2 (en) 2007-02-13 2012-12-25 Fujifilm Manufacturing Europe B.V. Substrate plasma treatment using magnetic mask device
ES2375508T3 (es) * 2007-05-21 2012-03-01 Dow Global Technologies Llc Objetos recubiertos.
EP2183407A1 (en) * 2007-07-30 2010-05-12 Dow Global Technologies Inc. Atmospheric pressure plasma enhanced chemical vapor deposition process
US20100255216A1 (en) * 2007-11-29 2010-10-07 Haley Jr Robert P Process and apparatus for atmospheric pressure plasma enhanced chemical vapor deposition coating of a substrate
EP2235735B1 (en) 2008-02-01 2015-09-30 Fujifilm Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of a moving substrate
US8445897B2 (en) 2008-02-08 2013-05-21 Fujifilm Manufacturing Europe B.V. Method for manufacturing a multi-layer stack structure with improved WVTR barrier property
EP2528082A3 (en) 2008-02-21 2014-11-05 FUJIFILM Manufacturing Europe B.V. Plasma treatment apparatus with an atmospheric pressure glow discharge electrode configuration
EP2286436A1 (en) * 2008-06-06 2011-02-23 FUJIFILM Manufacturing Europe B.V. Method and apparatus for plasma surface treatment of moving substrate
DE102009006484A1 (de) * 2009-01-28 2010-07-29 Ahlbrandt System Gmbh Vorrichtung zum Modifizieren der Oberflächen von Bahn-, Platten- und Bogenware mit einer Einrichtung zur Erzeugung eines Plasmas
WO2010092384A1 (en) 2009-02-12 2010-08-19 Fujifilm Manufacturing Europe Bv Two layer barrier on polymeric substrate
CN111085411B (zh) * 2020-01-07 2022-05-13 大连交通大学 一种高绝缘电阻二氧化硅薄膜材料及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0617142A1 (en) * 1993-03-26 1994-09-28 Shin-Etsu Chemical Co., Ltd. Preparation of silica thin films
WO2000070117A1 (en) * 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
CN1320062A (zh) * 1998-07-24 2001-10-31 英国国防部 表面涂层
WO2003066932A1 (en) * 2002-02-05 2003-08-14 Dow Global Technologies Inc. Corona-generated chemical vapor deposition on a substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2990608B2 (ja) * 1989-12-13 1999-12-13 株式会社ブリヂストン 表面処理方法
US5344462A (en) * 1992-04-06 1994-09-06 Plasma Plus Gas plasma treatment for modification of surface wetting properties
FR2704558B1 (fr) * 1993-04-29 1995-06-23 Air Liquide Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement.
US5372876A (en) * 1993-06-02 1994-12-13 Appleton Mills Papermaking felt with hydrophobic layer
US6106659A (en) * 1997-07-14 2000-08-22 The University Of Tennessee Research Corporation Treater systems and methods for generating moderate-to-high-pressure plasma discharges for treating materials and related treated materials
US6118218A (en) * 1999-02-01 2000-09-12 Sigma Technologies International, Inc. Steady-state glow-discharge plasma at atmospheric pressure
AU2453102A (en) * 2000-07-24 2002-02-05 Dow Global Technologies Inc Thermoplastic superabsorbent polymer blend compositions and their preparation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0617142A1 (en) * 1993-03-26 1994-09-28 Shin-Etsu Chemical Co., Ltd. Preparation of silica thin films
CN1320062A (zh) * 1998-07-24 2001-10-31 英国国防部 表面涂层
WO2000070117A1 (en) * 1999-05-14 2000-11-23 The Regents Of The University Of California Low-temperature compatible wide-pressure-range plasma flow device
WO2003066932A1 (en) * 2002-02-05 2003-08-14 Dow Global Technologies Inc. Corona-generated chemical vapor deposition on a substrate

Also Published As

Publication number Publication date
CN1845797A (zh) 2006-10-11
JP2007505219A (ja) 2007-03-08
WO2005049228A3 (en) 2005-08-18
MXPA06002679A (es) 2006-06-05
WO2005049228A2 (en) 2005-06-02
US20060222779A1 (en) 2006-10-05
KR20060082858A (ko) 2006-07-19
EP1663518A2 (en) 2006-06-07
BRPI0413769A (pt) 2006-10-31
CA2537075A1 (en) 2005-06-02

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Termination date: 20090907