CN100444308C - 宽温度范围的卡盘系统 - Google Patents

宽温度范围的卡盘系统 Download PDF

Info

Publication number
CN100444308C
CN100444308C CNB2004800119231A CN200480011923A CN100444308C CN 100444308 C CN100444308 C CN 100444308C CN B2004800119231 A CNB2004800119231 A CN B2004800119231A CN 200480011923 A CN200480011923 A CN 200480011923A CN 100444308 C CN100444308 C CN 100444308C
Authority
CN
China
Prior art keywords
chuck
temperature
workpiece
thermal
heat exchange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800119231A
Other languages
English (en)
Chinese (zh)
Other versions
CN1784765A (zh
Inventor
A·王
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of CN1784765A publication Critical patent/CN1784765A/zh
Application granted granted Critical
Publication of CN100444308C publication Critical patent/CN100444308C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2004800119231A 2003-05-07 2004-05-06 宽温度范围的卡盘系统 Expired - Fee Related CN100444308C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46905003P 2003-05-07 2003-05-07
US60/469,050 2003-05-07

Publications (2)

Publication Number Publication Date
CN1784765A CN1784765A (zh) 2006-06-07
CN100444308C true CN100444308C (zh) 2008-12-17

Family

ID=33452253

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800119231A Expired - Fee Related CN100444308C (zh) 2003-05-07 2004-05-06 宽温度范围的卡盘系统

Country Status (8)

Country Link
US (1) US20050008983A1 (https=)
EP (1) EP1623452B1 (https=)
JP (1) JP2007515781A (https=)
KR (1) KR20060038925A (https=)
CN (1) CN100444308C (https=)
DE (1) DE602004003365T2 (https=)
TW (1) TW200428468A (https=)
WO (1) WO2004102640A1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459788B1 (ko) * 2002-01-14 2004-12-04 주성엔지니어링(주) 2단 웨이퍼 리프트 핀
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
JP5040913B2 (ja) * 2006-03-31 2012-10-03 富士通セミコンダクター株式会社 半導体装置の製造方法
US20080121821A1 (en) * 2006-11-27 2008-05-29 Varian Semiconductor Equipment Associates Inc. Techniques for low-temperature ion implantation
US7528391B2 (en) 2006-12-22 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for reducing contamination during ion implantation
JP2008235315A (ja) * 2007-03-16 2008-10-02 Tokyo Electron Ltd 基板処理装置、基板処理方法および記録媒体
JP4949091B2 (ja) * 2007-03-16 2012-06-06 東京エレクトロン株式会社 基板処理装置、基板処理方法および記録媒体
JP5262412B2 (ja) * 2008-08-07 2013-08-14 シンフォニアテクノロジー株式会社 真空処理装置
NL2004322A (en) * 2009-04-13 2010-10-14 Asml Netherlands Bv Cooling device, cooling arrangement and lithographic apparatus comprising a cooling arrangement.
NL2004242A (en) 2009-04-13 2010-10-14 Asml Netherlands Bv Detector module, cooling arrangement and lithographic apparatus comprising a detector module.
US20110143548A1 (en) * 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
JP5570938B2 (ja) * 2009-12-11 2014-08-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
FR2960816B1 (fr) * 2010-06-02 2012-07-13 Sidel Participations Four pour le conditionnement thermique de preformes et procede de commande d'un dispositif de refroidissement par air equipant un tel four
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
CN103426793B (zh) * 2012-05-24 2016-02-03 沈阳芯源微电子设备有限公司 基板冷热处理装置
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US12255123B2 (en) 2015-09-30 2025-03-18 Microfabrica Inc. Micro heat transfer arrays, micro cold plates, and thermal management systems for semiconductor devices, and methods for using and making such arrays, plates, and systems
JP6614933B2 (ja) * 2015-11-11 2019-12-04 東京エレクトロン株式会社 基板載置機構および基板処理装置
CN108698898A (zh) * 2016-01-28 2018-10-23 康宁股份有限公司 采用流体传导对玻璃进行热强化的工艺
JP6997108B2 (ja) * 2016-06-02 2022-01-17 アクセリス テクノロジーズ， インコーポレイテッド ウェハ冷却方法
US12420314B2 (en) 2019-10-18 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor cleaning apparatus and method
CN110911320B (zh) * 2019-12-09 2023-08-18 北京北方华创微电子装备有限公司 冷却装置及其控制方法、半导体加工设备
US10866036B1 (en) 2020-05-18 2020-12-15 Envertic Thermal Systems, Llc Thermal switch

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001139379A (ja) * 1999-11-09 2001-05-22 Toshiba Ceramics Co Ltd 高熱伝導性窒化アルミニウム焼結体の製造方法
CN1297670A (zh) * 1998-03-05 2001-05-30 Fsi国际公司 包含低热质量导热烘烤盘的合成烘烤/冷却装置
US6409932B2 (en) * 2000-04-03 2002-06-25 Matrix Integrated Systems, Inc. Method and apparatus for increased workpiece throughput
US6461801B1 (en) * 1999-05-27 2002-10-08 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
US6495802B1 (en) * 2001-05-31 2002-12-17 Motorola, Inc. Temperature-controlled chuck and method for controlling the temperature of a substantially flat object

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3602687A (en) * 1969-06-23 1971-08-31 Battelle Development Corp Arc length control
US4609037A (en) * 1985-10-09 1986-09-02 Tencor Instruments Apparatus for heating and cooling articles
JP2987085B2 (ja) * 1995-06-28 1999-12-06 日本碍子株式会社 半導体ウエハー保持装置、その製造方法およびその使用方法
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
US6111225A (en) * 1996-02-23 2000-08-29 Tokyo Electron Limited Wafer processing apparatus with a processing vessel, upper and lower separately sealed heating vessels, and means for maintaining the vessels at predetermined pressures
JPH10294275A (ja) * 1997-04-17 1998-11-04 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
DE69842191D1 (de) * 1997-11-05 2011-05-05 Tokyo Electron Ltd Halbleiterscheibenhaltevorrichtung
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6506291B2 (en) * 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US6490145B1 (en) * 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
US6771086B2 (en) * 2002-02-19 2004-08-03 Lucas/Signatone Corporation Semiconductor wafer electrical testing with a mobile chiller plate for rapid and precise test temperature control

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1297670A (zh) * 1998-03-05 2001-05-30 Fsi国际公司 包含低热质量导热烘烤盘的合成烘烤/冷却装置
US6461801B1 (en) * 1999-05-27 2002-10-08 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
JP2001139379A (ja) * 1999-11-09 2001-05-22 Toshiba Ceramics Co Ltd 高熱伝導性窒化アルミニウム焼結体の製造方法
US6409932B2 (en) * 2000-04-03 2002-06-25 Matrix Integrated Systems, Inc. Method and apparatus for increased workpiece throughput
US20020153099A1 (en) * 2000-04-03 2002-10-24 Albert Wang Apparatus for increased workpiece throughput
US6495802B1 (en) * 2001-05-31 2002-12-17 Motorola, Inc. Temperature-controlled chuck and method for controlling the temperature of a substantially flat object

Also Published As

Publication number Publication date
US20050008983A1 (en) 2005-01-13
KR20060038925A (ko) 2006-05-04
DE602004003365T2 (de) 2007-09-13
DE602004003365D1 (de) 2007-01-04
CN1784765A (zh) 2006-06-07
EP1623452A1 (en) 2006-02-08
JP2007515781A (ja) 2007-06-14
WO2004102640A1 (en) 2004-11-25
EP1623452B1 (en) 2006-11-22
TW200428468A (en) 2004-12-16

Similar Documents

Publication Publication Date Title
CN100444308C (zh) 宽温度范围的卡盘系统
US6461801B1 (en) Rapid heating and cooling of workpiece chucks
TWI373811B (en) Thermal wafer processor
US5927077A (en) Processing system hot plate construction substrate
KR100676203B1 (ko) 반도체 설비용 정전 척의 냉각 장치
TW201237941A (en) Abatement and strip process chamber in a dual loadlock configuration
WO2008019362A2 (en) Controlling critical dimensions in track lithography tools
TWI897942B (zh) 處理腔室與控制處理腔室中的部件的溫度之方法以及用於記錄在其上相關指令的非暫態電腦可讀取儲存媒體
KR101569956B1 (ko) 화학 처리 및 열처리용의 생산성이 높은 처리 시스템 및 동작 방법
US6291801B1 (en) Continual flow rapid thermal processing apparatus and method
US20060242967A1 (en) Termoelectric heating and cooling apparatus for semiconductor processing
US12518985B2 (en) Wafer heating apparatus and wafer processing apparatus using the same
JP2002299319A (ja) 基板処理装置
JP2002118096A (ja) アッシング装置
JP7762153B2 (ja) 温度調整空洞特徴部を有するウエハチャック
El-Awady et al. Integrated bake/chill for photoresist processing
US20050173396A1 (en) Heat-treating apparatus and heat-treating method
KR101001870B1 (ko) 반도체 제조 장비 및 이를 이용한 실리콘 산화막 건식 식각방법
KR102541301B1 (ko) 기판 처리 장치 및 액 공급 유닛
CN223501824U (zh) 一种退火设备
KR200264227Y1 (ko) 급속 열처리장치의 쿨다운 챔버
JP2000068249A (ja) 半導体製造装置
KR100420226B1 (ko) 플라즈마 처리장치용 정전척
JP2005150699A (ja) 熱処理装置および熱処理方法
JPH1154448A (ja) ボート

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081217

Termination date: 20100506