CN100440291C - 带有光敏单元的矩阵显示器件 - Google Patents

带有光敏单元的矩阵显示器件 Download PDF

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CN100440291C
CN100440291C CNB038225816A CN03822581A CN100440291C CN 100440291 C CN100440291 C CN 100440291C CN B038225816 A CNB038225816 A CN B038225816A CN 03822581 A CN03822581 A CN 03822581A CN 100440291 C CN100440291 C CN 100440291C
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display device
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matrix display
display unit
voltage
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CN1685390A (zh
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M·T·约翰逊
A·吉拉尔多
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Koninklijke Philips NV
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Abstract

一种包含寻址像素(10)阵列的矩阵显示器件，每个像素(10)具有显示单元(20)和用于控制显示单元工作的控制电路。控制电路中包括电荷存储电容器(36)和连接至存储电容器(36)上的光敏器件(40)，光敏器件(40)用于根据入射至其上的光线调整存储电容器(36)上存储的电荷。控制电路还包含一个装置，用于对最好为光敏晶体管的光敏器件(40)的栅极端进行独立的电压控制(42)。这样，光敏晶体管的偏置更有效和灵活。该装置最好包含有连接至光敏器件(40)栅极端的第二行导线(42)。该额外的导线还能够使用与该类型像素电路相同的极性类型的晶体管，由此可节省额外的掩膜工序(和成本)。此外，这也就有可能使用光敏晶体管作为TFT开关。这种双重作用(光敏晶体管/TFT开关)能使像素电路具备额外的特性，例如将占空比技术应用于运动模糊补偿。

Description

带有光敏单元的矩阵显示器件
本发明涉及在基底上包含一个可寻址像素阵列的矩阵显示器件，每个像素有一个显示单元和一个控制显示单元工作的控制电路，控制电路包括：电荷存储电容器和光敏器件，后者与存储电容器相连接用以按照入射在光敏器件上的光线调整存储电容器上存储的电荷；驱动显示单元用的驱动单元，该驱动单元的控制端连接至所述存储电容器上；以及用以使数据信号施加到驱动单元上的地址单元。
本发明还涉及一种显示装置。
WO 0199190上公开了一种上述类型的矩阵显示器，它包含的光敏器件可改善显示器的均匀性和补偿显示器件的老化效应。其光敏器件是具有栅极端的光敏晶体管，栅极与显示单元的阳极连接，这里的显示单元是所谓的有机电致发光显示单元(OLED)，特别是聚合物电致发光单元(PLED)。理想上，对于n型光敏晶体管，上述连接点的电压处于PLED阴极电压(相对为负)与电源电压(相对为正)之间，并且驱动单元的输入端与电源电压相连接。由于光敏晶体管不被驱动到导通状态，所以，它起光敏二极管的作用，其导通特性差不多与入射光强呈线性响应。
然而，实际上，由于栅极电压会随PLED的光输出变动(PLED电压会随光输出变化)，所以有这样的情况，即栅极电压不是最佳值，光敏二极管的泄漏电流(不是光电流)增大。结果，存储电荷的点上放电过快，像素中的光线电平发生错误。
本发明的一个目的是提供一种显示器件，它具有改善的光敏单元性能。所以，按照本发明之显示器件的特征在于，对控制电路提供一种装置，对光敏器件的控制端给以独立的电压控制。发明人已经认识到，在此种方式下能自由地选择光敏单元的栅极电压，不再受限于在像素电路内可供应用的电压。因此，光敏晶体管的偏置更加有效。光敏晶体管可始终设定于较小“暗”泄漏电流的工作区域内。
此外，本发明的优点是对于运动图像可以采用占空因数技术进行运动补偿。借助于使光敏晶体管导通(也即提供一个相反极性的电压使之变成导电的TFT开关)，使驱动晶体管的栅极电压设定到电源线的电压上。这使得驱动用TFT变为截止，没有电流流过PLED。这样，能够先期地停止光输出。虽然静止图像上不需要这样做，但能使像素电路的均匀补偿有充分的得益。
另外，光敏晶体管可以是p型半导体。那时，控制电路全都是P型管，可以只采用PMOS工艺来制造显示器件。与常规的混合型NMOS和PMOS工艺相比较，现在可节省通常的3道额外的掩模工序，所以制造工艺的成本低些。在另一实施例中，光敏晶体管可以为n型半导体，控制电路也全都是n型管，能只使用NMOS工艺制造显示器件。与常规的混合型NMOS和PMOS工艺相比较，也能节省通常3道额外的掩模工序，亦可使制造工艺的成本低些。
从属权利要求说明了本发明有其优点的实施。
本发明的这些和其他目的通常参考下面所描述的实施例以及对它们的叙述，可清晰了解。
附图中：
图1示明常规的有源矩阵电致发光显示器件；
图2示明常规显示器件的电路中几个典型的像素；
图3A和3B分别示明p型和n型光敏晶体管的工作范围；
图4示明按照本发明的显示器件控制电路的实施例；
图5示明按照本发明的显示器件控制电路的另一个实施例，全部TFT和光敏晶体管都是n型管；
图6示明按照本发明的显示器件控制电路的又一个实施例；
图7示明控制本发明的显示器件控制电路的再一个实施例；以及
图8A和8B示明按照本发明的显示器件的光输出在运动图像和静止图像下分别与帧时间之间的函数曲线关系。
附图未按原物比例画出，在附图中相同的标号表示相同或相似部件。
参考图1，常规的有源矩阵电致发光显示器件中包含有由方块10表示的、行和列规律地间隔的矩阵状像素阵列构成的平板，每个像素包含一个电致发光显示单元和一个用以控制流过显示单元之电流的、关连的驱动器件，各像素均位于行(选择)和列(数据)地址导体或即导线12和14交叉集合之间的交点上。为简明起见，图1中只示出几个像素。对像素10的寻址是借助外围驱动电路根据地址导线的集合进行的，外围驱动电路包含有连接到各导线集合端点上的行(选择)驱动器电路16和列(数据)驱动器电路18。
借助于由驱动器电路16将选择信号施加到相关的行导线12上，在一个帧周期内依次地寻址每个像素行，以便依靠驱动器电路18将各数据信号并行地提供给列导线14，由此在帧周期内按寻址周期确定一行内各个像素的显示输出。在寻址到每一行时，由电路18按合适的同步给出各数据信号。
在显示装置内应用该矩阵显示器件时，它还包含有：数据驱动器电路18，用以使数据信号施加到寻址开关单元26的数据端上；以及选择驱动器电路16，用以使选择信号施加到所述选择线12上。视频信号经由天线由调谐器装置TUN进行接收，TUN将信号传输至视频处理电路VP上，由VP向数据驱动器电路18传输处理好的视频信号。
图2的电路示明几个典型的像素。每个像素10包括一个发光的有机电致发光显示单元20，在这里以二极管单元(LED)表示，它包含一对电极，在两个电极之间夹有一层或多层有源式有机电致发光的发光材料。本具体实施例中，材料中包含聚合物LED材料，然而，也可以使用其他有机电致发光材料，诸如低分子量材料。在绝缘基底的表面上，制作有显示单元以及关连的有源矩阵电路。基底采用例如是玻璃的透明材料，与基底最紧密接触的各个显示单元20的电极由诸如ITO之类透明导电材料构成，以使得电致发光层产生的光线能通过这些电极和基底，从而在基底另一侧的观看者能见到图像。
每个像素10包括一个低温有机硅聚合物形式的TFT 22，这里为p型导电的TFT，它能够控制所通过的电流，由此根据像素上施加的数据信号控制显示单元20的工作。像素的数据信号电压通过列导线14提供，而列导线是由相关的列内诸像素共用的。列导线14通过也为p型的地址TFT 26连接至电流控制驱动TFT 22的栅极上，同一行像素的各个TFT 26的栅极全部连接至一条公共行导线12上。
像素10的每行又共用保持于预定电位上的公共电源线30，它通常地作为连续的公共电极供所有像素使用，以及公共电流线32。显示单元20和驱动用TFT 22串联地连接于电源线30与公共电流线32之间，公共电流线32起电流源的作用，提供流过显示单元20的电流。例如，导线30可以处于地电位，导线32约处于正电位，它比如相对于导线30大约为12V。流过显示单元20的电流由驱动用TFT 22整流，成为TFT 22栅极电压的一个函数，具体电流大小取决于由数据信号决定而存储下的控制值。
对像素的各行进行选择和寻址是借助于行驱动器电路16将选择脉冲施加到其关连的行导线12上，使各像素的地址TFT 26导通，并确定一个相应的行地址周期。在此场合下，从驱动器电路18上提供的视频信息中得出的、并由驱动器电路18施加到列导线14上的电压电平形式的数据信号，由地址TFT 26传输到驱动TFT 22的栅极节点24上。当行地址周期结束时，地址晶体管26截止，由连接于TFT 22栅极与公共电流线32之间的像素存储电容器36维持栅极节点24上的电压，从而在随后的驱动周期内可保持显示单元正常工作。
由TFT 22的栅极与公共电流线32之间的电压决定流过显示单元20的电流，该流过显示单元的电流是驱动TFT 22栅极-源极电压的一个函数(p沟道型TFT 22的源极连接至公共电流线32上，TFT 22的漏极连接至显示单元20上)。该电流转而控制像素的光输出电平(灰度层级)。
像素的每行在各行地址板上按这种方式被依次寻址，从而使每行内各像素顺序地受到它们各自的驱动信号的加载，并在对应于大约一个帧周期的随后的驱动周期内使各像素给出所期望的显示输出，直至它们下次被寻址到。
在每个像素上，采用光-电配置来补偿显示递降效应，这里是对于给定的电流减小依据其产生的光输出电平提高其工作效率。由于此种递降，受到长时间和强烈驱动的显示单元呈现的亮度将减低，导致显示亮度不均匀。因此，借助于在一个驱动周期内控制显示单元给出的综合的总体光输出，光-电配置可将这些效应消解到一定程度。在驱动周期内通过使存储电容器放电的速率依赖于显示单元的瞬时发光，能应用电-光反馈来调整在此期间存储电容器上的电荷。结果，对于给定的数据信号值，在地址周期后的驱动周期内使显示单元被激励而产生光线的时间长度，按照显示单元上存在的驱动电流/发光级特性以及施加的数据信号电平进行调整，以减小发光递降效应，特别是在显示不均匀性方面。因此，能使各个像素的光输出实质上得到象非递降显示单元那样所需的均匀性。
参考图2，该常规显示器件中的电-光放电装置包含一个栅控的光敏薄膜器件40，它此处的形式为另一个TFT，其运载电流的电极(源极和漏极)跨接在存储电容器36上，也即连接在驱动晶体管22的栅极节点24与电流线32上，而其栅极连接至驱动TFT 22与显示单元20之间的节点41上。在本具体实施例中，驱动TFT 22(以及地址TFT 26)为p型低温有机硅聚合物MOS TFT，而器件40为相反导电类型也即n型的有机硅聚合物MOS TFT。
像素的构造和配置方面使栅控的光敏器件40受到像素工作中由显示单元辐射出的光的照射。寻址阶段结束时，根据施加的数据信号电平在驱动TFT 22的栅极节点24上设定一个电压，使电容器36充电到这个电压电平，在随后的驱动阶段内它至少于初始时刻起到维持TFT22栅极电压的作用。与电流线32连接的光敏器件40的漏极结被反向偏置而对光照起响应，在驱动周期内显示单元辐射的光线使器件40产生小量的光电流，它大约与显示单元的瞬时光输出级成线性比例。该光电流的作用是使存储电容器36慢慢放电，因此，光电流大小也即放电速率取决于显示单元的光输出电平。理想情况下，TFT 40的栅极上加正偏置，其电压对应于节点41上的电压，相对于电流线32的电压始终为零或负值，这样可确保TFT 40保持于截止(不导通)状态。因此，晶体管40的作用不过是一个泄流器件，呈现为反偏的光敏二极管，它可使电容器36上的电荷泄漏。在驱动周期内电容器36发生的放电使得驱动TFT 22的栅-源电压逐渐下降，它转而使流过显示单元20的电流按相应的状态随着显示单元光输出的逐渐减小而渐次地降低，直至TFT 22趋近其截止门限电平。流过显示单元20的电流的下降使节点41上的电压电平逐渐减小，虽然如此，它正能确保TFT 40继续保持截止。最终，当栅极节点24上的电压下跌到低于TFT的门限电压时，光输出终止。
图3A示明p型导电式光敏晶体管的工作范围，而图3B示明n型导电式光敏晶体管的工作范围。图中的曲线表明对数坐标的源极-漏极电流Ids与施加的源极-栅极电压Vgs之间的关系。虚线表示光电流，实线表示暗电流。箭头310表示光敏晶体管的工作范围，箭头320和330分别表示光敏晶体管运行时的理想区域和危险区域。理想情况下，光敏晶体管应工作于320区域内，那里的暗电流(大大地)小于光电流。
实际上，由于栅极电压随着PLED光输出变动(PLED电压随光输出改变)将发生这样的情况，栅压不是最佳的以及光敏二极管的泄漏电流(不是光电流)增加，也即进入箭头330指明的区域。例如，n型光敏晶体管的场合下，工作时节点41上的电压可能高到8V，而驱动TFT的控制端典型地约为4V。结果，存储点24上放电过快，像素的光输出级发生错误。
图4示明按照本发明的显示器件的控制电路。光敏晶体管40的栅极连接至设定于独立电压的第二行导线42上。这样，光敏晶体管的栅压现在能自由选择，不再受限于控制电路内可应用的电压。于是，光敏晶体管的偏置可以更有效和灵活，使光敏晶体管始终工作于低暗电流的理想范围内。
再一个优点在于，光敏晶体管可以为p型导电的，结果，电路成为全部均是p型管，在制造显示器件时能单独地使用PMOS工艺。与常规的混合式NMOS/PMOS工艺相比较，它典型地可节省三道额外的掩膜工序，使工艺较简单，产品较便宜。在此种p型光敏晶体管的场合下，光敏晶体管可以工作于低暗电流的理想范围内，例如是确保栅-源电压在所有情况下高于0V。
图5示明按照本发明的显示器件用的另一个控制电路实施例，这里的所有TFT和光敏晶体管均为n型。由于现在的驱动用晶体管22为n型，它连接至显示单元的相反一端。光敏晶体管40的栅极也连接至设定于独立电压的第二行导线42上。这样，光敏晶体管的栅压现在能自由选择，不再受限于控制电路内可应用的电压。于是，光敏晶体管的偏置可以更有效和灵活，使光敏晶体管始终工作于低暗电流的理想范围内，例如是确保栅-源电压在所有情况下低于0V。现在，电路成为全部均是n型管，在制造显示器件时能单独地使用NMOS工艺。同样，与常规的混合式NMOS/PMOS工艺相比较，它典型地可节省三道额外的掩膜工序，使工艺较简单，产品较便宜。
图6示明按照本发明的显示器件的又一个控制电路实施例，它基于在US-6229506内叙述的先有技术电路，设计为可补偿驱动晶体管门限电压的变动。同样地，该电路通过采用p型光敏晶体管得到改进。光敏晶体管40的栅极也连接至设定于独立电压的第二行导线42上。这样，光敏晶体管的栅压现在能自由地选择，不再受限于控制电路内可应用的电压。于是，光敏晶体管的偏置可以更有效和灵活，使光敏晶体管始终工作于低暗电路的理想范围内，例如是确保栅-源电压在所有情况下高于0V。该电路同样具有完全为p型管时的优点。可以看到，在本发明的范围内可以实现对其他先有技术数据电压寻址像素电路的类似修改。
图7示明按照本发明的显示器件的再一个控制电路实施例，它基于2000年“国际显示器学术研究大会会刊2000”第358-361页内S.J.Bae等人叙述的先有技术电路。这是一个镜像电流像素电路的例子，它有许多电路变型，这里再次示明是因为它具有全部为p型管的电路的优点。
镜像电流电路的设计可补偿门限电压的变动和驱动晶体管迁移率的变动。与前面的实施例不同，这里的数据信号的形式为电流。寻址周期内，镜像电流确保数据电流在驱动TFT上有镜像映射，因此，在其控制端24上存在合适的电压，并存储于电容器36上。寻址到后，驱动TFT和存储电容器被第二个寻址TFT从周围电路中隔离开。这里同样地，通过采用p型晶体管改善了镜像电流电路。光敏晶体管40的栅极也连接至设定于独立电压的第二种行导线42上。这样，光敏晶体管的栅压现在能自由地选择，不再受限于控制电路内可应用的电压。于是，光敏晶体管的偏置可以更有效和灵活，使光敏晶体管始终工作于低暗电流的理想范围内，例如是确保栅-源电压在所有情况下高于0V。可以看到，在本发明的范围内可以实现对其他镜像电流像素电路的类似修改。
上面诸实施例中，连接至光敏晶体管40的栅板上的第二行导线42，对于整个显示器来说它是单公共端的就可以。
按照本发明的电路中可以采用占空比技术用于运动图像的运动补偿。图8A示明在运动图像场合显示器件的光输出I与帧时间t的函数曲线关系。如图8A中所示，通过使光敏晶体管导通(也即提供一个相反极性的电压使光敏晶体管变成导电的TFT开关)，驱动晶体管的栅压设置到电源线电压上。这就使驱动TFT截止，没有电流流过PLED。于是，光输出先期停止。
在静止图像场合下，同样的参数I与t的关系曲线示明于图8B，它不需要占空比技术，但能够获得像素电路一致性的全部受益。因此，按照本发明的电路能做到以占空比技术用于运动模糊的补偿。常规显示器中，视频图像的显示会带来取样和保持所产生的伪痕而给出模糊的图像。
在占空比技术的实施例中，控制电路最好能这样设计，使连接至光敏晶体管40之栅极上的第二行(选择)导线42在每一行的显示中被单独地寻址。在此种场合下，可实现显示器更自然的扫描复位。另一种实施例中，第二行导线对显示器各行的子集来说可以是公共的，例如，是位置上相互邻近行的一个组块。
本发明的再一个方面涉及一种显示装置，它包含：根据本发明的矩阵显示器件；使所述数据信号施加到寻址开关单元26数据端上的数据驱动器电路18；以及使选择信号施加到所述选择导线12上的选择驱动器电路16。最好，独立电压控制装置42内包含占空比控制装置。
概括地说，本发明涉及一种矩阵显示器件，它包含一个可寻址像素10的阵列，每个像素10有一个显示单元以及一个用以控制显示单元工作的控制电路。控制电路内包括电荷存储电容器36和连接至存储电容器上的光敏器件40，它根据入射到光敏器件40上的光线调整存储电容器36上存储的电荷。
控制电路还包含一个装置，用于对最好为光敏晶体管的光敏器件40之栅极端的独立电压控制42。这样，光敏晶体管的偏置能够更有效和灵活。
最好，该装置包含有连接至光敏器件40栅极端上的第二行导线42。该附加导线又能使用与该像素电路类型为相同极性的晶体管(p型或n型)，以节省额外的掩膜工序(和成本)。此外，这就有可能使用光敏晶体管作为TFT开关。这种双重作用(光敏晶体管/TFT开关)能使像素电路有额外的特性，例如将占空比技术应用于运动模糊补偿。
本发明也可应用于其他显示单元，诸如按电致发光原理和场致辐射原理工作的显示单元。
应当指出，上述说明的实施例并不是用于限制本发明，本技术领域人员能设计许多另外的实施例，而偏离不开所附权利要求书的范围。在权利要求书中，对处于括号内的任何参考符号不应认作是对权利要求书的限制。词语“包含”并不排除在与权利要求书中所列出的单元之外的其他单元或步骤。在单元前面的量词“一”或“一个”并不意味着排除多个此种单元。

Claims (8)

1.一种包含可寻址像素阵列的矩阵显示器件，每个像素具有显示单元和用于控制显示单元工作的控制电路，该控制电路包含：
电荷存储电容器，以及连接在存储电容器上的光敏开关器件，用于根据入射至光敏开关器件上的光线调整存储电容器上存储的电荷；
驱动显示单元的驱动晶体管，驱动晶体管的控制端连接至所述存储电容器上；
用于使数据信号施加到驱动晶体管上的寻址开关单元；以及
用于对光敏开关器件的栅极端进行独立的电压控制的装置。
2.权利要求1的矩阵显示器件，其中，独立电压控制装置包含连接至光敏开关器件的栅极端的选择线。
3.权利要求1的矩阵显示器件，其中，光敏开关器件包含一个薄膜晶体管，其p-类型或n-类型的导电类型与驱动晶体管和寻址开关单元的p-类型或n-类型的导电类型相同。
4.权利要求1的矩阵显示器件，其中，显示单元包含一个有机发光二极管。
5.权利要求2的矩阵显示器件，其中，对于显示器件中的每条选择线，所述选择线是可单独地寻址的。
6.权利要求2的矩阵显示器件，其中，选择线由单个公共端构成。
7.一种显示装置，包含：
如权利要求1的矩阵显示器件；
数据驱动器电路，用于将所述数据信号施加到寻址开关单元的数据端上；以及
选择驱动器电路，用于将选择信号施加到选择线上。
8.权利要求7的显示装置，其中，所述独立电压控制装置包含占空比控制装置，用于运动模糊补偿。
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US7453424B2 (en) 2008-11-18
KR20050057535A (ko) 2005-06-16
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